Terminal structure, preparation method thereof and power device

By setting insulating layers of different thicknesses in the terminal structure to partially isolate the gate transition structure and the equipotential ring, the breakdown problem caused by the unstable potential of the equipotential ring is solved, and the withstand voltage performance and reliability of silicon-based and silicon carbide-based power devices are improved.

CN122073829APending Publication Date: 2026-05-22MISILICONN SEMICON TECH CO LTD
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Patent Information

Application Number
CN202411687721.4
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-11-22
Publication Date
2026-05-22

AI Technical Summary

Technical Problem

In the existing terminal structures of silicon-based and silicon carbide-based power devices, unstable equipotential ring potentials lead to breakdown and gate oxide failure, reducing the device's withstand voltage performance and reliability.

Method used

A terminal structure is designed, including a drift layer, an equipotential ring, a first insulating layer, a gate transition structure, a second insulating layer, and a gate line. By setting different thickness portions of the first insulating layer, the gate transition structure and the equipotential ring are isolated, thereby increasing the voltage difference tolerance and improving the reliability of the insulating layer.

Benefits of technology

It improves the withstand voltage performance of the terminal structure and the reliability of power devices, enhances the voltage difference tolerance of devices during turn-off, and reduces the breakdown failure rate.

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Abstract

The invention provides a terminal structure and a preparation method thereof, and a power device. The terminal structure comprises a drift layer, an equipotential ring, a first insulating layer, a grid switching structure, a second insulating layer and a grid line. The drift layer comprises a first surface and a second surface which are opposite to each other, the equipotential ring extends into the drift layer from the first surface, the first insulating layer comprises a first part and a second part and is arranged on the first surface, and the gate switching structure is arranged on one side, away from the drift layer, of the first insulating layer; the orthographic projection of the first part on the first surface is not overlapped with the orthographic projection of the gate switching structure on the first surface, the orthographic projection of the second part on the first surface is located in the range of the orthographic projection of the gate switching structure on the first surface, and the maximum thickness value of the first part is smaller than the maximum thickness value of the second part. The terminal structure can be applied to the power device so as to improve the voltage withstanding performance and the reliability of the power device.
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