Display panel, preparation method thereof and display device

Abstract

The invention provides a display panel, a preparation method thereof and a display device. The display panel comprises a substrate and a thin film transistor arranged on the substrate, the substrate comprises a shielding layer, the shielding layer comprises an organic conductive polymer material, the orthographic projection of the shielding layer on the substrate is at least overlapped with the orthographic projection of the thin film transistor on the substrate, and the shielding layer is loaded with voltage. According to the display panel, the shielding layer formed by the organic conductive polymeric material is arranged in the substrate, and the shielding layer is loaded with the constant voltage, so that stable voltage can be generated on the surface of the substrate, interference on the thin film transistor is reduced, stable work of the thin film transistor is ensured, and the display effect is improved. The display effect, the quality and the product competitiveness of the display panel are improved, and the shielding layer made of the organic conductive polymer material is simple in preparation process and has good light transmission.

Description

Technical Field

[0001] This invention generally relates to the field of display technology, and more specifically to a display panel, its manufacturing method, and a display device. Background Technology

[0002] Polyimide (PI) possesses advantages such as high and low temperature resistance, good insulation, high strength, and bending resistance. In OLED display panels, the flexible substrate often uses polyimide (PI) as the main organic back film. However, in the driving circuit of OLED display panels, thin-film transistors (TFTs) are generally located on the flexible PI substrate. Due to the material properties of PI, when the TFT is operating or affected by the surrounding environment, the polymer organic matter inside the PI is easily polarized. Charges accumulate on the surface of the PI layer near the poly (active layer), forming an electrostatic field. Because of its good insulation, the electric field is difficult to dissipate after it is formed. Prolonged exposure to this field can alter the electrical properties of the TFT, causing it to deviate, resulting in problems such as image retention and reduced brightness in the display panel. Summary of the Invention

[0003] In view of the above-mentioned defects or deficiencies in the prior art, it is desirable to provide a display panel, a method for manufacturing the same, and a display device thereof. By setting an organic conductive polymer shielding layer in the substrate and applying a constant voltage to the shielding layer, a stable voltage can be generated on the substrate surface, thereby reducing interference to the thin-film transistors, ensuring stable operation of the thin-film transistors, and thus ensuring that the display panel has a good display effect, thereby improving the product yield and enhancing product competitiveness.

[0004] In a first aspect, the present invention provides a display panel comprising: a substrate and thin-film transistors disposed on the substrate; The substrate includes a shielding layer, which is made of an organic conductive polymer material. The orthographic projection of the shielding layer onto the substrate overlaps at least with the orthographic projection of the thin-film transistor onto the substrate. A constant voltage is applied to the shielding layer.

[0005] As an optional solution, the substrate also includes a base layer, a flexible layer and a water-blocking layer stacked sequentially, and the shielding layer can be stacked on any one of the base layer, the flexible layer and the water-blocking layer.

[0006] As an optional solution, the substrate also includes a base layer, a flexible layer and a water-blocking layer stacked in sequence. The flexible layer is an organic polymer material, and the shielding layer and the flexible layer form a single-layer composite film. The single-layer composite film is obtained by a film-forming process after mixing the precursor of the organic conductive polymer material or the solution of the organic conductive polymer with the precursor of the organic polymer material.

[0007] As an optional solution, the shielding layer includes polyaniline material.

[0008] As an optional solution, the shielding layer also includes at least one of conductive particles, heat-resistant particles, and light-transmitting particles doped in the organic conductive polymer material. The conductive particles include conductive carbon black; the heat-resistant particles include silicon dioxide; and the light-transmitting particles include titanium dioxide and / or dodecylbenzene sulfonic acid.

[0009] As an alternative, the orthographic projection of the thin-film transistor channel onto the substrate overlaps with the orthographic projection of the shielding layer onto the substrate.

[0010] As an alternative, the shielding layer is prepared using a patterning process, and the orthographic projection of the shielding layer on the substrate does not overlap with the light-transmitting area of ​​the substrate.

[0011] As an alternative, the orthogonal projection of the shielding layer on the substrate completely covers the orthogonal projection of the thin-film transistor on the substrate.

[0012] As an optional solution, the thin-film transistor includes a semiconductor layer and a gate layer, both of which are disposed on one side of the substrate layer; The shielding layer is disposed on the side of the semiconductor layer away from the gate layer; and / or, The shielding layer is located on the side of the gate layer away from the semiconductor layer.

[0013] As an optional solution, the display panel also includes a driving circuit, and the substrate also includes a buffer layer disposed on the side of the water-blocking layer away from the substrate layer. Vias are formed on the substrate, and the vias extend at least from the shielding layer to the buffer layer. The shielding layer is electrically connected to the DC signal terminal of the drive circuit through the vias.

[0014] As an optional solution, the display panel also includes a first electrode and a second electrode, with the shielding layer electrically connected to the first electrode and the second electrode respectively, for providing voltage to the shielding layer.

[0015] Secondly, the present invention provides a method for manufacturing a display panel according to the first aspect, specifically comprising the following steps: Thin-film transistors are formed on a substrate; A shielding layer is formed on a substrate, the shielding layer comprising an organic conductive polymer material, and the orthographic projection of the shielding layer on the substrate at least overlaps with the orthographic projection of the thin-film transistor on the substrate; A constant voltage is applied to the shielding layer.

[0016] As an optional solution, the substrate includes a base layer, a flexible layer, and a water-blocking layer stacked sequentially to form a shielding layer on the substrate, including: Organic conductive polymer materials are prepared into organic conductive polymer solutions; An organic conductive polymer solution is formed on the surface of a substrate, flexible layer, or water-blocking layer using a film-forming process and then pressed and fixed so that the shielding layer is stacked on the surface of any one of the substrate, flexible layer, and water-blocking layer.

[0017] As an optional solution, the substrate further includes a base layer, a flexible layer, and a water-blocking layer stacked sequentially, wherein the flexible layer is an organic polymer material and forms a shielding layer on the substrate, including: A mixed solution is obtained by mixing a solution of an organic conductive polymer material or a precursor of an organic conductive polymer material with a precursor of an organic polymer material. The mixed solution is processed to form a single-layer composite film, which consists of a shielding layer and a flexible layer.

[0018] Thirdly, the present invention provides a display device, including the display panel of the first aspect.

[0019] The display panel of the present invention includes a substrate comprising a shielding layer, the shielding layer comprising an organic conductive polymer material, wherein the orthographic projection of the shielding layer on the substrate at least overlaps with the orthographic projection of the thin-film transistor on the substrate, and a constant voltage is applied to the shielding layer. Thus, the shielding layer formed by the organic conductive polymer enables a stable voltage to be generated on the substrate surface, thereby reducing interference to the thin-film transistor, ensuring stable operation of the thin-film transistor, and improving the display effect of the display panel, enhancing its quality and product competitiveness. Furthermore, the organic conductive polymer as a shielding layer has advantages: firstly, the preparation process of the organic conductive polymer material is simple, which helps to save processing costs and improve production efficiency; secondly, the organic conductive polymer has good light transmittance, reducing the impact on the light transmittance of the substrate, making it suitable for products with high photosensitivity requirements. Attached Figure Description

[0020] Other features, objectives, and advantages of this application will become more apparent from the following detailed description of non-limiting embodiments with reference to the accompanying drawings: Figure 1 This is a schematic diagram of the structure of a display panel according to an embodiment of this application; Figure 2 A schematic diagram of the structure of a first substrate in a display panel according to an embodiment of this application; Figure 3 A schematic diagram of the structure of a second substrate in a display panel according to an embodiment of this application; Figure 4 A schematic diagram of the structure of a third substrate in a display panel according to an embodiment of this application; Figure 5 A schematic diagram of the structure of a fourth substrate in a display panel according to an embodiment of this application; Figure 6 Another schematic diagram of the structure of a display panel according to an embodiment of this application; In the picture, 10. Substrate; 11. Shielding layer; 12. Base layer; 13. Flexible layer; 14. Water-blocking layer; 15. Buffer layer; 20. Thin film transistor, 21. Semiconductor layer, 22. Gate layer, S1, source, D1, drain, 23. Active layer, 24. Gate insulating layer, 25. Interlayer dielectric layer. Detailed Implementation

[0021] The present application will now be described in further detail with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and not intended to limit it. Furthermore, it should be noted that, for ease of description, only the parts relevant to the invention are shown in the accompanying drawings.

[0022] It should be noted that, unless otherwise specified, the embodiments and features described in this application can be combined with each other. This application will now be described in detail with reference to the accompanying drawings and embodiments.

[0023] In existing OLED top-emitting devices, during prolonged use, the thin-film transistors (TFTs) in the backplane circuit are often affected by changing electric fields, resulting in phenomena such as Vth offset, which adversely affects the display quality of the device screen. In related technologies, electric field shielding layers are used to protect electronic devices from external electromagnetic interference. By fabricating a metal shielding layer and applying an appropriate voltage, when an external electric field attempts to penetrate the metal shielding layer, the metal shielding layer can absorb and disperse the electric field energy, thereby preventing damage to the TFTs and mitigating the phenomenon of TFT electrical offset. The electric field shielding layer fabrication process in related technologies generally involves etching a metal using a mask after curing a flexible substrate to form a shielding layer on the outside of the TFT to maintain its stability. However, this process is complex, time-consuming, and costly, and the metal shielding layer has very poor light transmittance, affecting the operation of the photosensitive module.

[0024] Based on the above issues, such as Figure 1-6 As shown, the present invention provides a display panel 100, including: a substrate 10 and thin film transistors 20 disposed on the substrate 10; The substrate 10 includes a shielding layer 11, which is made of an organic conductive polymer material. The orthographic projection of the shielding layer 11 on the substrate 10 overlaps at least with the orthographic projection of the thin film transistor 20 on the substrate 10. The shielding layer 11 is loaded with a constant voltage.

[0025] It should be noted that the substrate 10 includes a shielding layer 11, that is, the shielding layer 11 is part of the substrate 10. The shielding layer 11 is loaded with a constant voltage, which is beneficial to generate a stable voltage on the surface of the substrate 10 and form an electric field, thereby avoiding interference from the external electric field to the thin film transistor 20, ensuring the stable operation of the thin film transistor 20, improving the display effect of the display panel, and thus helping to improve the product quality and competitiveness of the display panel.

[0026] The shielding layer 11 may include any one or two or more organic conductive polymer materials, specifically determined according to actual product requirements and processing technology. For example, the shielding layer 11 may be, but is not limited to, one or two of polyaniline, polythiophene, and polyphenylene sulfide. When the shielding layer 11 is composed of two or more organic conductive polymer materials, the two or more organic conductive polymer materials may be stacked after forming thin films through their respective film-forming processes. Of course, the two or more organic conductive polymer materials may also be mixed with each other through their respective precursors. By adjusting the pH, concentration, temperature, and mixing method of the system, the compatibility of each precursor may be ensured, and the respective precursors may be completely mixed to form a uniform single-layer composite film. The embodiments of this application do not specifically limit this.

[0027] For example, the shielding layer 11 formed by the organic conductive polymer can be prepared by the following method: (1) Prepare acidic organic conductive polymer solutions by chemical synthesis or electrochemical methods; (2) Select a suitable substrate and uniformly coat the organic conductive polymer onto the substrate; among which, the substrate can be glass, PI (polyimide), SiO2, SiN and other organic or inorganic structures; (3) The organic conductive polymer layer coated on the substrate is cured by heat treatment or chemical treatment to form a continuous conductive network film.

[0028] It is understandable that the substrate 10 itself is a stacked structure, and the shielding layer 11 can be stacked on the surface of any layer in the substrate 10; of course, the shielding layer 11 can also be mixed with the precursor of the flexible material layer in the substrate 10 to form a composite monolayer.

[0029] It is also understandable that, due to the good light transmittance of organic conductive polymer materials, the shielding layer 11 can be disposed on the entire surface of the substrate 10, which is beneficial for generating excellent shielding performance. Alternatively, the shielding layer 11 can be disposed in a local area of ​​the substrate 10, ensuring that the orthographic projection of the shielding layer 11 on the substrate 10 overlaps with the orthographic projection of the thin-film transistor 20 on the substrate 10. This is beneficial for generating shielding performance, ensuring stable operation of the thin-film transistor 20, and maximizing the light transmittance of the substrate 10. The overlap of the orthographic projection of the shielding layer 11 on the substrate 10 and the orthographic projection of the thin-film transistor 20 on the substrate 10 can be understood as either complete overlap or partial overlap. The shielding layer 11 in the embodiments of this application is flexibly designed, enabling the generation of a stable electric field on the surface of the substrate 10 while maximizing the light transmittance of the substrate 10.

[0030] It should be noted that the shielding layer 11 is loaded with a stable voltage, and an external circuit can be connected to the shielding layer 11 independently to continuously provide a stable voltage; of course, the shielding layer 11 can also be connected to signal lines in the display panel that can provide a stable voltage through vias on the substrate 10, and the embodiments of this application do not specifically limit this.

[0031] For example, the display panel includes a display area and a non-display area. The display area is provided with a pixel circuit, which is used to drive the pixels to emit light and realize the display of the image. The pixel circuit can be, but is not limited to, 2T1C, that is, two thin film transistors 20 and a storage capacitor, or it can be 7T1C, that is, seven thin film transistors 20 and a storage capacitor. The non-display area is provided with a driving circuit, which is electrically connected to the pixel circuit. In the embodiments of this application, the shielding layer 11 on the substrate 10 can be located in the non-display area.

[0032] The display panel of this application solves the problems of complex processing, high cost, and impact on the light transmittance of the substrate 10 caused by using metal as the shielding layer 11 in the prior art. In the display panel of this application, the substrate 10 includes a shielding layer 11, which is composed of an organic conductive polymer material. The orthographic projection of the shielding layer 11 onto the substrate 10 at least overlaps with the orthographic projection of the thin-film transistor 20 onto the substrate 10, and a constant voltage is applied to the shielding layer 11. Thus, the shielding layer 11 formed by the organic conductive polymer enables a stable voltage to be generated on the surface of the substrate 10, thereby reducing interference with the thin-film transistor 20, ensuring stable operation of the thin-film transistor 20, and improving the display effect of the display panel, enhancing its quality and product competitiveness. Furthermore, using the organic conductive polymer as the shielding layer 11 has advantages: firstly, the preparation process of the organic conductive polymer material is simple, which helps save processing costs and improve production efficiency; secondly, the organic conductive polymer has good light transmittance, reducing the impact on the light transmittance of the substrate 10, making it suitable for products with high photosensitivity requirements.

[0033] As an alternative implementation, the substrate 10 further includes a base layer 12, a flexible layer 13, and a water-blocking layer 14 stacked sequentially, and the shielding layer 11 may be stacked on any one of the base layer 12, the flexible layer 13, and the water-blocking layer 14.

[0034] The substrate 12 is typically glass, which can be peeled off in subsequent processing. The flexible layer 13 can be, but is not limited to, an organic material layer such as polyimide. The water-blocking layer 14 is an inorganic material, which can be, but is not limited to, any one of silicon oxide, silicon nitride, or silicon oxynitride.

[0035] like Figure 4 As shown, the shielding layer 11 can be stacked on the base layer 12, that is, located between the base layer 12 and the flexible layer 13; as Figure 3 As shown, the shielding layer 11 can also be stacked on the flexible layer 13, that is, located between the flexible layer 13 and the water-blocking layer 14; as Figure 2 As shown, the shielding layer 11 can also be stacked on the water-blocking layer 14.

[0036] Specifically, the shielding layer 11 is prepared on the substrate layer 12, the flexible layer 13 or the water-blocking layer 14 in accordance with the above-described method of preparing the shielding layer 11 by means of organic conductive polymer. Then, the shielding layer 11 is tightly bonded to any one or both of the substrate layer 12, the flexible layer 13 and the water-blocking layer 14 by means of hot pressing or adhesive bonding.

[0037] In this embodiment, the position of the shielding layer 11 is flexible and easy to process, which helps to reduce the requirements for processing technology and improve production efficiency.

[0038] As a feasible approach, such as Figure 5 As shown, the substrate 10 also includes a base layer 12, a flexible layer 13 and a water-blocking layer 14 stacked sequentially. The flexible layer 13 is an organic polymer material. The shielding layer 11 and the flexible layer 13 form a single-layer composite film. The single-layer composite film is obtained by mixing the precursor of the organic conductive polymer material or the solution of the organic conductive polymer with the precursor of the organic polymer material through a film-forming process.

[0039] Among them, the shielding layer 11 and the flexible layer 13 form a single-layer composite film. The single-layer composite film is obtained by mixing the precursor of the organic conductive polymer material or the solution of the organic conductive polymer material with the precursor of the organic polymer material through a film-forming process. That is, the material of the shielding layer 11 and the material of the flexible layer 13 are mixed to form a single-layer structure.

[0040] Specifically, the shielding layer 11 and the flexible layer 13 can be prepared as follows: The precursors of the organic conductive polymer and the organic polymer material are mixed to obtain a mixture. The mixing effect of the mixture is optimized by adjusting the pH, temperature, concentration, or mixing method to ensure good compatibility between the precursors of the organic conductive polymer and the organic polymer material. The mixture is then used to form a pre-formed monolayer composite film through film-forming processes such as coating, spin coating, or spraying. The temperature, humidity, and speed in the film-forming process are controlled to ensure the uniformity and integrity of the monolayer composite film. The specific temperature, humidity, and speed are determined based on the actual selected process and the properties of the mixture, and are not limited here. The pre-formed monolayer composite film is then treated by chemical treatment (chemical crosslinking or chemical modification, etc.) or heat treatment (low-temperature treatment or high-temperature treatment) to obtain a monolayer composite film with good uniformity and stability, so that the organic conductive polymer material forms a continuous conductive network in the flexible layer 13.

[0041] In this embodiment, the flexible layer 13 and the shielding layer 11 are obtained by mixing the precursors of organic conductive polymer materials with the precursors of organic polymer materials and then forming a film. On the one hand, this simplifies the processing technology, saves processing steps, and improves production efficiency. On the other hand, the single-layer composite film structure of the shielding layer 11 and the flexible layer 13 helps to ensure that the single-layer composite film has good heat resistance and flexibility. It effectively increases the conductivity of the flexible layer 13 without losing its performance, thereby forming a stable voltage on the substrate 10, shielding the influence of the external electric field on the thin film transistor 20, and ensuring the stable operation of the thin film transistor 20.

[0042] In a preferred embodiment, the shielding layer 11 comprises a polyaniline material.

[0043] In this embodiment, polyaniline is selected as the shielding layer 11. Polyaniline has good flexibility, heat resistance, conductivity, environmental stability and reversible color change properties, and it is also easy to manufacture. In actual processing, polyaniline is formed on the substrate 10. The conductivity of polyaniline is beneficial to disperse and conduct external electric fields, reduce their interference to the thin film transistor 20 and improve the working stability of the thin film transistor 20. Moreover, compared with metal shielding layers, the processing technology of polyaniline shielding layer 11 is simple and has less impact on the light transmittance of substrate 10.

[0044] It should be noted that after the shielding layer 11 formed by polyaniline material is energized, polyaniline may undergo three states: reduced, intermediate, and oxidized. When polyaniline is in the reduced state, it has low conductivity and appears colorless or pale yellow. As the voltage increases, polyaniline gradually loses some charge and transforms into the intermediate state, significantly increasing its conductivity, at which point the color changes to green or blue. Finally, when polyaniline is completely oxidized to the oxidized state, its conductivity decreases, and the color changes to bluish-purple or purplish-black. Utilizing this color change, selecting different voltage ranges helps ensure that polyaniline functions as the electric field shielding layer 11 under energized conditions, while also regulating the light transmittance of the substrate 10. For example, by controlling the applied voltage range, the polyaniline can be in the oxidized state, which can serve as a black substrate 10, thus enhancing the display.

[0045] In some embodiments, the shielding layer 11 further includes at least one of conductive particles, heat-resistant particles, and light-transmitting particles doped in an organic conductive polymer material. The conductive particles include conductive carbon black; the heat-resistant particles include silicon dioxide; and the light-transmitting particles include titanium dioxide and / or dodecylbenzene sulfonic acid.

[0046] It is understood that organic conductive polymer materials may be doped with only conductive particles; or only transparent particles; or only heat-resistant particles; or any two of conductive, transparent, and heat-resistant particles may be doped simultaneously; or all of conductive, transparent, and heat-resistant particles may be doped simultaneously; the specific doping method depends on the actual product requirements.

[0047] For example, by doping at least one of conductive particles, heat-resistant particles, and light-transmitting particles into an organic conductive polymer, a mixed system can be obtained by directly dispersing at least one of the conductive particles, heat-resistant particles, and light-transmitting particles uniformly in a solution of the organic conductive polymer. The mixed system is then formed on a substrate by a film-forming process to obtain the shielding layer 11.

[0048] In this embodiment, doping the organic conductive polymer with conductive particles is beneficial to improving the conductivity of the shielding layer 11. Doping the organic conductive polymer with heat-resistant particles is beneficial to improving the heat resistance of the entire substrate 10. Doping the organic conductive polymer with light-transmitting particles is beneficial to improving the light transmittance of the substrate 10.

[0049] In some embodiments, the orthographic projection of the channel of the thin-film transistor 20 onto the substrate 10 overlaps with the orthographic projection of the shielding layer 11 onto the substrate 10.

[0050] It is understood that the channel is the current transmission path in the thin-film transistor 20. In this embodiment, the display panel generates a stable voltage on the surface of the substrate 10 through the shielding layer 11, thereby forming an electric field that shields the channel of the thin-film transistor 20 from induced free charges in the non-thin-film transistor 20, thus achieving the effect of shielding the external electric field. In this way, the orthographic projection of the channel of the thin-film transistor 20 on the substrate 10 overlaps with the orthographic projection of the shielding layer 11 on the substrate 10, which can achieve the purpose of preventing induced free charges in the non-thin-film transistor 20 from entering the channel of the thin-film transistor 20.

[0051] It is also understandable that the larger the overlap area between the orthographic projection of the shielding layer 11 on the substrate 10 and the orthographic projection of the thin film transistor 20 on the substrate 10, the stronger the shielding layer 11's ability to shield external electric fields, and the better the stability of the thin film transistor 20.

[0052] In a preferred embodiment, the orthogonal projection of the shielding layer 11 on the substrate 10 completely covers the orthogonal projection of the channel of the thin film transistor 20 on the substrate 10; that is, the orthogonal projection of the shielding layer 11 on the substrate 10 may completely coincide with the orthogonal projection of the channel of the flip-chip film on the substrate 10, or the orthogonal projection area of ​​the shielding layer 11 on the substrate 10 may be larger than the orthogonal projection area of ​​the channel of the thin film transistor 20 on the substrate 10.

[0053] This embodiment helps to enhance the shielding effect of the shielding layer 11, resulting in better stability of the thin film transistor 20.

[0054] In actual manufacturing, to reduce the requirements for processing technology and ensure consistent shielding effect across the display panel, the area of ​​the orthographic projection region of the shielding layer 11 on the substrate 10 can be appropriately large. The orthographic projection of the channel of the thin-film transistor 20 on the substrate 10 lies within the orthographic projection of the shielding layer 11 on the substrate 10, and the edge of the orthographic projection region of the shielding layer 11 on the substrate 10 forms a certain distance with the edge of the orthographic projection of the thin-film transistor 20 on the substrate 10, for example, greater than 1 μm. This method allows for processing margins, facilitating manufacturing while effectively improving the shielding effect of the substrate 10, thereby enhancing the display effect of the display panel.

[0055] As an feasible method, the shielding layer 11 is prepared by a patterning process, and the orthographic projection of the shielding layer 11 on the substrate 10 does not overlap with the light-transmitting area of ​​the substrate 10.

[0056] The orthographic projection of the shielding layer 11 onto the substrate 10 does not overlap with the light-transmitting area of ​​the substrate 10, that is, the light-transmitting area of ​​the substrate 10 is not provided with the shielding layer 11.

[0057] It is understandable that the patterning process adopts existing patterning processes, which include steps such as film formation, exposure, and development. A mask is used to form a shielding layer 11. The working principle of the mask is that after the photoresist is exposed and developed, a photoresist retention area and a photoresist removal area are formed corresponding to the mask. The photoresist retention area corresponds to the light-transmitting area of ​​the substrate 10, and the photoresist removal area corresponds to the shielding layer 11.

[0058] The photoresist described above can be a positive photoresist, but it can also be a negative photoresist. Taking photoresist as a positive photoresist as an example, in this case, after exposure, the area where the photoresist is retained corresponds to the opaque portion of the photomask, and the area where the photoresist is removed corresponds to the opaque portion of the photomask. Further details will not be elaborated here.

[0059] This embodiment helps to ensure that the substrate 10 has good shielding properties while also ensuring good light transmittance, thereby making the substrate 10 suitable for products with high photosensitive requirements.

[0060] In some embodiments, the orthogonal projection of the shielding layer 11 onto the substrate 10 completely covers the orthogonal projection of the thin-film transistor 20 onto the substrate 10.

[0061] In this embodiment, the shielding layer 11 completely covers the orthogonal projection of the thin film transistor 20 on the substrate 10, which helps to further improve the shielding effect and improve the stability of the thin film transistor 20.

[0062] As a feasible approach, such as Figure 6 As shown, the thin-film transistor 20 includes a semiconductor layer 21 and a gate layer 22, both of which are disposed on one side of the substrate 10 layer. The shielding layer 11 is disposed on the side of the semiconductor layer 21 away from the gate layer 22; and / or, The shielding layer 11 is disposed on the side of the gate layer 22 away from the semiconductor layer 21.

[0063] It should be noted that the semiconductor layer 21 and the gate layer 22 can be used to form a thin film crystal. The semiconductor layer 21 is used to form a conductive channel between the gate and the source S1 and the drain D1. The gate layer 22 is isolated from the semiconductor layer 21 through a gate insulating layer. When an appropriate voltage is applied to the gate layer 22, the formation and disconnection of the conductive channel in the semiconductor layer 21 can be controlled.

[0064] The shielding layer 11 may be disposed on the side of the semiconductor layer 21 away from the gate layer 22; or the shielding layer may be disposed on the side of the gate layer 22 away from the semiconductor layer 21; or the shielding layer 11 may be disposed on both the side of the semiconductor layer 21 away from the gate layer 22 and the side of the gate layer 22 away from the semiconductor layer 21.

[0065] For example, such as Figure 1 As shown, the display panel 100 includes a substrate 10, which includes a base layer 12, a shielding layer 11, and a buffer layer 15 stacked together. An active layer 23 is disposed on the side of the buffer layer 15 away from the base layer 12. A gate insulating layer 24 is covered on the side of the active layer 23 away from the substrate 10. A gate layer 22 is disposed on the side of the gate insulating layer 24 away from the substrate 10. An interlayer dielectric layer 25 is covered on the side of the gate layer 22 away from the substrate 10. A source electrode S1 and a drain electrode D1 are disposed on the interlayer dielectric layer 25.

[0066] The display panel of the embodiments of this application can improve the shielding effect by setting a shielding layer 11 to prevent the free charge of the non-thin film transistor 20 from entering the channel of the thin film transistor 20. The free charge may come from the side of the semiconductor layer 21 away from the gate layer 22 and / or the side of the gate layer 22 away from the semiconductor layer 21. By setting the shielding layer 11 on the side of the semiconductor layer 21 away from the gate layer 22 and / or the side of the gate layer 22 away from the semiconductor layer 21, the shielding effect can be improved, thereby improving the stability of the thin film transistor 20 and improving the display effect of the display panel.

[0067] As an implementation method, the display panel also includes a driving circuit, and the substrate 10 also includes a buffer layer 15 disposed on the side of the water-blocking layer 14 away from the base layer 12. A via is formed on the substrate 10. The via extends through at least from the shielding layer 11 to the buffer layer 15. The shielding layer 11 is electrically connected to the DC signal terminal of the drive circuit through the via.

[0068] The buffer layer 15 can be hydrogen-containing silicon nitride or silicon oxide. The function of the buffer layer 15 is to prevent metal ions in the substrate 10 from diffusing to the active layer 23, and to prevent them from affecting the threshold voltage and leakage current. A suitable buffer layer 15 can improve the quality of the interface of the active layer 23 and prevent leakage current from being generated at the interface of the active layer 23.

[0069] The driving circuit is used to drive the pixel circuit to emit light and realize image display. By forming vias on the substrate 10, the vias extend at least from the shielding layer 11 to the buffer layer 15. The shielding layer 11 is connected to the electrical signal of the driving circuit through the vias, specifically the DC signal terminal, which helps to ensure a stable voltage is provided to the shielding layer 11. The DC signal terminal can be any one of the following: high-level signal terminal (VGH), low-level signal terminal (VGL), anode signal terminal (VDD), cathode signal terminal (VSS), and initial voltage signal terminal (Vinit). The specific type can be adjusted according to the specific layout of the driving circuit to simplify the circuit layout.

[0070] Of course, in actual processing, the shielding layer 11 can also be directly connected to the source S1 or drain D1 of the thin film transistor 20 through vias.

[0071] In this embodiment, no additional circuit is needed to apply voltage to the shielding layer 11. The electrical signal in the driving circuit applies voltage to the shielding layer 11. Thus, as long as the thin film transistor 20 is working, there is a stable voltage on the shielding layer 11, thereby forming a voltage on the surface of the substrate 10. This helps to reduce the influence of the external electric field on the thin film transistor 20 and ensure the working stability of the thin film transistor 20. Since there is no influence of the external electric field on the thin film transistor 20 when the thin film transistor is not working, the shielding layer 11 is connected to the DC signal terminal of the driving circuit, which also helps to save energy and reduce power consumption.

[0072] In some other embodiments, the display panel further includes a first electrode and a second electrode, and the shielding layer 11 is electrically connected to the first electrode and the second electrode respectively to provide voltage to the shielding layer 11.

[0073] The first electrode and the second electrode are two electrodes separately set on the display panel. Their purpose is to form a power supply circuit for the shielding layer 11, ensuring that a stable voltage is always applied to the shielding layer 11.

[0074] In this embodiment, the shielding layer 11 is applied voltage by two separately set electrodes, which facilitates voltage adjustment, stabilizes the voltage, and ensures that the shielding layer 11 is always applied with a stable voltage, thereby improving the reliability of the shielding layer 11.

[0075] In summary, the display panel 100 of the embodiments of this application includes a substrate 10 comprising a shielding layer 11. The shielding layer 11 comprises an organic conductive polymer material. The orthographic projection of the shielding layer 11 onto the substrate 10 overlaps at least with the orthographic projection of the thin-film transistor 20 onto the substrate 10, and a constant voltage is applied to the shielding layer 11. Thus, the shielding layer 11 formed by the organic conductive polymer enables a stable voltage to be generated on the surface of the substrate 10, thereby reducing interference to the thin-film transistor 20, ensuring stable operation of the thin-film transistor 20, and improving the display effect of the display panel, thereby enhancing the quality and product competitiveness of the display panel. Furthermore, using the organic conductive polymer as the shielding layer 11 has advantages: firstly, the organic conductive polymer material preparation process is simple, which helps to save processing costs and improve production efficiency; secondly, the organic conductive polymer has good light transmittance, reducing the impact on the light transmittance of the substrate 10, making it suitable for products with high photosensitivity requirements. Furthermore, the flexible layer 13 and the shielding layer 11 are obtained by mixing the precursors of organic conductive polymer materials with the precursors of organic polymer materials and then forming a film. On the one hand, this simplifies the processing technology, saves processing steps, and improves production efficiency. On the other hand, the single-layer composite film structure of the shielding layer 11 and the flexible layer 13 helps to ensure that the single-layer composite film has good heat resistance and flexibility. It effectively increases the conductivity of the flexible layer 13 without losing its performance, thereby forming a stable voltage on the substrate 10, thus shielding the influence of the external electric field on the thin film transistor 20 and ensuring the stable operation of the thin film transistor 20.

[0076] Secondly, embodiments of this application provide a method for manufacturing a display panel according to the first aspect, specifically including the following steps: Step S10: Form a thin-film transistor on the substrate; Step S20: Form a shielding layer on the substrate. The shielding layer includes an organic conductive polymer material. The orthographic projection of the shielding layer on the substrate overlaps at least with the orthographic projection of the thin-film transistor on the substrate. Step S30: Apply a constant voltage to the shielding layer.

[0077] It should be noted that the execution of steps S10 and S20 is not sequential. In some embodiments, the thin-film transistor can be formed on the substrate first, and then the shielding layer can be formed on the substrate. Of course, in other embodiments, the shielding layer can be formed on the substrate first, and then the thin-film transistor can be formed on the substrate, as long as the orthogonal projection of the shielding layer on the substrate at least overlaps with the orthogonal projection of the thin-film transistor on the substrate.

[0078] The display panel fabrication method of this embodiment can ensure the stable operation of thin-film transistors, thereby ensuring that the display panel has a good display effect, improving the product yield and enhancing product competitiveness.

[0079] As one possible implementation, the substrate includes a base layer, a flexible layer, and a water-blocking layer stacked sequentially. Step S20, forming a shielding layer on the substrate, includes: Organic conductive polymer materials are prepared into organic conductive polymer solutions; An organic conductive polymer solution is formed on the surface of a substrate, flexible layer, or water-blocking layer using a film-forming process and then pressed and fixed so that the shielding layer is stacked on the surface of any one of the substrate, flexible layer, and water-blocking layer.

[0080] The film-forming process can be, but is not limited to, coating, spraying, or spin coating; the pressing and fixing method can be hot pressing or adhesive bonding.

[0081] Understandably, the film-forming process also includes a curing process. For example, after an organic conductive polymer solution is coated on the surface of a substrate, flexible layer, or water-blocking layer, it is cured into a film by heat treatment or chemical treatment.

[0082] As a feasible method, the substrate further includes a base layer, a flexible layer, and a water-blocking layer stacked sequentially, wherein the flexible layer is an organic polymer material, and step S20, forming a shielding layer on the substrate, includes: A mixed solution is obtained by mixing a solution of an organic conductive polymer material or a precursor of an organic conductive polymer material with a precursor of an organic polymer material. The mixing uniformity of the mixed solution can be improved by adjusting the pH, concentration, and mixing method.

[0083] The mixed solution is processed to form a single-layer composite film, which consists of a shielding layer and a flexible layer.

[0084] In this process, controlling parameters such as temperature, humidity, and speed can improve the uniformity and integrity of the monolayer composite film. In some embodiments, post-treatment, such as, but not limited to, heat treatment or chemical treatment, can be performed after film formation to further improve the performance and stability of the monolayer composite film.

[0085] In this embodiment, the shielding layer and the flexible layer are prepared as a single-layer composite film, which helps to reduce the thickness of the substrate, simplify the process, facilitate processing, and improve production efficiency.

[0086] Thirdly, the present invention provides a display device including the display panel 100 of the first aspect. It is understood that this display device possesses all the features and advantages of the aforementioned display module, which will not be repeated here. In summary, this display device has high quality and yield, and high display resolution.

[0087] A display device is a product with image display capabilities. For example, a display device can be any of the following: monitor, television, billboard, digital photo frame, laser printer with display capabilities, telephone, mobile phone, personal digital assistant (PDA), digital camera, portable camcorder, viewfinder, navigator, vehicle, large-area wall display, home appliance, information query equipment (such as business query equipment for e-government, banks, hospitals, power companies, etc.), monitor, etc. A display device can also be a microdisplay or a product containing a microdisplay. Products containing microdisplays can be any of the following: smartwatch, smart bracelet, head-mounted display, stereoscopic display, and AR devices (such as AR glasses), VR devices (such as VR glasses), etc. For example, a microdisplay can be a display with a display size ranging from approximately 0.2 inches to approximately 2.5 inches, but is not limited to this. Understandably, a microdisplay can also be a display with a smaller display size, such as a display size less than or equal to 0.2 inches.

[0088] It should be understood that the terms "center," "longitudinal," "lateral," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," and "outer," etc., used above to indicate orientation or positional relationships are based on the orientation or positional relationships shown in the accompanying drawings and are only for the convenience of describing the invention and simplifying the description, and do not indicate or imply that the panel or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of the invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined with "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the invention, unless otherwise stated, "a plurality of" means two or more.

[0089] The above description is merely a preferred embodiment of this application and an explanation of the technical principles employed. Those skilled in the art should understand that the scope of the invention involved in this application is not limited to technical solutions formed by specific combinations of the above-described technical features, but should also cover other technical solutions formed by arbitrary combinations of the above-described technical features or their equivalents without departing from the inventive concept. For example, technical solutions formed by substituting the above features with (but not limited to) technical features with similar functions disclosed in this application.

Claims

1. A display panel, characterized in that, include: A substrate and a thin-film transistor disposed on the substrate; The substrate includes a shielding layer comprising an organic conductive polymer material, wherein the orthographic projection of the shielding layer on the substrate at least overlaps with the orthographic projection of the thin-film transistor on the substrate, and the shielding layer is loaded with a constant voltage.

2. The display panel according to claim 1, characterized in that, The substrate further includes a base layer, a flexible layer, and a water-blocking layer stacked sequentially, and the shielding layer may be stacked on any one of the base layer, the flexible layer, and the water-blocking layer.

3. The display panel according to claim 1, characterized in that, The substrate further includes a base layer, a flexible layer and a water-blocking layer stacked sequentially. The flexible layer is an organic polymer material. The shielding layer and the flexible layer form a single-layer composite film. The single-layer composite film is obtained by a film-forming process after mixing the precursor of the organic conductive polymer material or the solution of the organic conductive polymer with the precursor of the organic polymer material. Preferably, the shielding layer comprises a polyaniline material.

4. The display panel according to claim 1, characterized in that, The shielding layer further includes at least one of conductive particles, heat-resistant particles, and light-transmitting particles doped in the organic conductive polymer material. The conductive particles include conductive carbon black; the heat-resistant particles include silicon dioxide; and the light-transmitting particles include titanium dioxide and / or dodecylbenzenesulfonic acid.

5. The display panel according to any one of claims 1-4, characterized in that, The orthographic projection of the channel of the thin-film transistor onto the substrate overlaps with the orthographic projection of the shielding layer onto the substrate.

6. The display panel according to claim 5, characterized in that, The shielding layer is prepared using a patterning process, and the orthographic projection of the shielding layer on the substrate does not overlap with the light-transmitting area of ​​the substrate.

7. The display panel according to claim 5, characterized in that, The orthogonal projection of the shielding layer onto the substrate completely covers the orthogonal projection of the thin-film transistor onto the substrate.

8. The display panel according to any one of claims 1-4, characterized in that, The thin-film transistor includes a semiconductor layer and a gate layer, both of which are disposed on one side of the substrate layer; The shielding layer is disposed on the side of the semiconductor layer away from the gate layer; And / or, The shielding layer is disposed on the side of the gate layer away from the semiconductor layer.

9. The display panel according to claim 2, characterized in that, The display panel further includes a driving circuit, and the substrate further includes a buffer layer disposed on the side of the water-blocking layer opposite to the base layer. The substrate has vias that extend at least from the shielding layer to the buffer layer, and the shielding layer is electrically connected to the DC signal terminal of the driving circuit through the vias. Alternatively, the display panel may further include a first electrode and a second electrode, with the shielding layer electrically connected to the first electrode and the second electrode respectively, for applying voltage to the shielding layer.

10. A method for manufacturing a display panel according to any one of claims 1-9, characterized in that, Specifically, the steps include the following: Thin-film transistors are formed on the substrate; A shielding layer is formed on the substrate, the shielding layer comprising an organic conductive polymer material, and the orthographic projection of the shielding layer on the substrate at least overlaps with the orthographic projection of the thin-film transistor on the substrate; A constant voltage is applied to the shielding layer.

11. The method for manufacturing a display panel according to claim 10, characterized in that, The substrate includes a base layer, a flexible layer, and a water-blocking layer stacked sequentially, and a shielding layer is formed on the substrate, including: The organic conductive polymer material is prepared into an organic conductive polymer solution; The organic conductive polymer solution is formed on the surface of the substrate layer, the flexible layer, or the water-blocking layer using a film-forming process and then pressed and fixed so that the shielding layer is stacked on the surface of any one of the substrate layer, the flexible layer, and the water-blocking layer.

12. The method for manufacturing a display panel according to claim 10, characterized in that, The substrate further includes a base layer, a flexible layer, and a water-blocking layer stacked sequentially, wherein the flexible layer is an organic polymer material and forms a shielding layer on the substrate, comprising: A mixed solution is obtained by mixing the solution of the organic conductive polymer material or the precursor of the organic conductive polymer material with the precursor of the organic polymer material; The mixed solution is used to form a single-layer composite film through a film-forming process. The single-layer composite film consists of the shielding layer and the flexible layer.

13. A display device, characterized in that, Includes the display panel as described in any one of claims 1-9.

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