Thin film, photoelectric device and display device

Abstract

The invention provides a thin film, a photoelectric device and a display device. The thin film comprises M layers of barrier units which are arranged in a stacked mode, each barrier unit comprises an organic layer, a mesoporous layer and an inorganic layer which are arranged in a stacked mode, and M is an integer larger than or equal to 2. According to the invention, water vapor and oxygen in the external environment can be blocked through the blocking unit, so that the packaging effect of the photoelectric device is improved.

Description

Technical Field

[0001] This application belongs to the field of display technology, and in particular relates to a thin film, optoelectronic device and display apparatus. Background Technology

[0002] Optoelectronic devices are highly sensitive to moisture and oxygen, and without proper protection, they are easily corroded by these substances, severely impacting their performance. Therefore, optoelectronic devices are typically encapsulated to prevent corrosion from moisture and oxygen. However, existing encapsulation structures still require improvement. Summary of the Invention

[0003] Based on this, embodiments of this application provide a thin film, an optoelectronic device, and a display device.

[0004] In a first aspect, embodiments of this application provide a thin film, the thin film comprising M layers of barrier units stacked together, the barrier units comprising an organic layer, a mesoporous layer and an inorganic layer stacked together, wherein M is an integer greater than or equal to 2.

[0005] Secondly, embodiments of this application also provide an optoelectronic device, the optoelectronic device comprising a device body and a thin film stacked together, the thin film comprising M layers of barrier units stacked together, the barrier unit comprising an organic layer, a mesoporous layer and an inorganic layer stacked together, wherein the organic layer in the same barrier unit is closer to the device body than the inorganic layer; wherein M is an integer greater than or equal to 2.

[0006] Thirdly, embodiments of this application also provide a display device, which includes the aforementioned optoelectronic devices.

[0007] The thin film provided in this application embodiment blocks water vapor and oxygen from the external environment through a barrier unit, thereby improving the encapsulation effect of optoelectronic devices. Attached Figure Description

[0008] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are merely some embodiments of this application. Those skilled in the art can obtain other drawings based on these drawings without creative effort. In the following description, the same reference numerals denote the same parts.

[0009] Figure 1 This is a schematic diagram of the structure of the thin film provided in the embodiments of this application.

[0010] Figure 2 This is a schematic diagram of the first structure of the optoelectronic device provided in the embodiments of this application.

[0011] Figure 3 This is a schematic diagram of a second structure of the optoelectronic device provided in an embodiment of this application.

[0012] Figure 4 This is a schematic diagram of the first structure of the device body provided in the embodiments of this application.

[0013] Figure 5 This is a schematic diagram of a second structure of the device body provided in an embodiment of this application.

[0014] Figure 6 This is a flowchart illustrating the fabrication method of the optoelectronic device provided in the embodiments of this application.

[0015] Explanation of icon numbers:

[0016] 100, Substrate; 200, Device body; 210, First electrode; 220, Light-emitting layer; 230, Second electrode; 240, Electron functional layer; 241, Electron transport layer; 242, Electron injection layer; 250, Hole functional layer; 251, Hole transport layer; 252, Hole injection layer; 300, Thin film; 310, Barrier unit; 311, Organic layer; 312, Mesoporous layer; 313, Inorganic layer. Detailed Implementation

[0017] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of this application without creative effort are within the scope of protection of this application.

[0018] In the description of this application, unless otherwise stated, directional terms such as "upper" and "lower" specifically refer to the drawing directions in the accompanying drawings. Furthermore, in the description of this application, the term "comprising" means "including but not limited to". Various embodiments of the invention may exist in the form of a range; it should be understood that the description in the form of a range is merely for convenience and brevity and should not be construed as a rigid limitation on the scope of the invention; therefore, it should be considered that the range description has specifically disclosed all possible sub-ranges and single numerical values ​​within that range. For example, it should be considered that the range description from 1 to 6 has specifically disclosed sub-ranges such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., and single numbers within the range, such as 1, 2, 3, 4, 5, and 6, regardless of the range. Additionally, whenever a numerical range is indicated herein, it means including any referenced number (fraction or integer) within the indicated range.

[0019] In the description of this application, "a plurality of" means two or more, unless otherwise expressly specified. The term "exemplary" is used to mean "used as an example, illustration, or description." Any embodiment described as "exemplary" in this application is not necessarily to be construed as being more preferred or advantageous than other embodiments. The term "and / or" includes any and all combinations of one or more of the associated listed items.

[0020] This application provides a thin film, such as... Figure 1 As shown, the thin film 300 includes M layers of barrier units 310 stacked together. The barrier unit 310 includes an organic layer 311, a mesoporous layer 312 and an inorganic layer 313 stacked together. In the same barrier unit 310, the organic layer 311 is closer to the device body 200 than the inorganic layer 313. Here, M is an integer greater than or equal to 2.

[0021] Specifically, when the thin film 300 is applied in the packaging structure of optoelectronic devices, the substrate 100, the device body 200, and the thin film 300 are stacked, and the organic layer 311 of the same barrier unit 310 in the thin film 300 is closer to the device body 200 than the inorganic layer 313. Since the inorganic layer 313 has a certain water and oxygen barrier effect, and the mesoporous layer 312 has multiple voids (such as pores or gaps), even if water vapor and oxygen from the external environment are introduced into the optoelectronic device, they can be blocked by the inorganic layer 313. Furthermore, the presence of the mesoporous layer 312 allows water vapor and oxygen to enter the voids of the mesoporous layer 312, further blocking water vapor and oxygen from the external environment, thereby improving the packaging effect of the device body 200. In addition, the presence of the mesoporous layer 312 also gives the optoelectronic device good heat dissipation performance.

[0022] In some embodiments of this application, 2 ≤ M ≤ 100, and preferably, 2 ≤ M ≤ 20. By controlling the number of barrier units 310 of the thin film 300 within the above range, production costs can be reduced while ensuring the water and oxygen barrier effect.

[0023] Specifically, the Mth barrier unit is defined as comprising an Mth organic layer, an Mth mesoporous layer, and an Mth inorganic layer stacked together; the thin film 300 comprises a first barrier unit 310, ... and an Mth barrier unit 310 stacked together, that is, the thin film 300 comprises a first mesoporous layer 312, a first inorganic layer 313, ... an Mth organic layer 311, an Mth mesoporous layer 312, and an Mth inorganic layer 313 stacked together. For example, ... Figure 1 As shown, when M=2, the thin film 300 includes a first organic layer 311, a first mesoporous layer 312, a first inorganic layer 313, a second organic layer 311, a second mesoporous layer 312, and a second inorganic layer 313 stacked sequentially.

[0024] In some embodiments of this application, the Mth mesoporous layer 312 of the Mth barrier unit contains moisture, that is, the Mth barrier mesoporous layer 312 contains a certain amount of moisture, which is artificially injected into the mesoporous layer 312 during the thin film preparation process. When the thin film 300 is applied in the packaging structure of an optoelectronic device, the Mth mesoporous layer 312 is the mesoporous layer 312 furthest from the device body 200 (i.e., the outermost mesoporous layer 312). It is understandable that, since the outermost inorganic layer 313 of the optoelectronic device has a certain barrier effect, the moisture content of water vapor entering the optoelectronic device through the outermost inorganic layer 313 is at a low level (i.e., the water vapor pressure is low). This application sets the outermost mesoporous layer 312 (i.e., the Mth mesoporous layer 312) to contain a certain amount of moisture, so that the water vapor pressure of the outermost mesoporous layer 312 is high. Low vapor pressure water vapor that seeps into the optoelectronic device from the outside is difficult to pass through the outermost mesoporous layer 312, thereby achieving an excellent water vapor barrier effect.

[0025] Optionally, the moisture content of the Mth mesoporous layer 312 is 0.01% to 50% of its maximum water absorption capacity. This effectively blocks moisture from entering from the external environment, reducing the risk of moisture contained in the Mth mesoporous layer 312 seeping into the device body 200. Specifically, the weight ratio of the Mth mesoporous layer 312 before and after water injection is 1:(1.00001 to 1.025), for example, it can be 1:1.00001, 1:1.00005, 1:1.0001, 1:1.0005, 1:1.001, 1:1.005, 1:1.01, 1:1.025, or any range between two values. The maximum water absorption of the mesoporous layer 312 can be measured as follows: the mesoporous layer 312 is fully exposed to an atmosphere with a certain humidity, and the maximum water absorption of the mesoporous layer 312 is obtained by measuring the weight change.

[0026] For example, the moisture content of the Mth mesoporous layer 312 can be 0.01%, 0.1%, 0.5%, 1%, 5%, 10%, 15%, 20%, 25%, 30%, 35%, 40%, 45%, 50% of the maximum water absorption of the Mth mesoporous layer 312, or any range between two values, and can be set according to actual needs. Preferably, the moisture content of the Mth mesoporous layer 212 is 0.01% to 10% of the maximum water absorption of the Mth mesoporous layer 212.

[0027] In some embodiments of this application, when M≥3, the m-th barrier unit is defined as comprising a stacked m-th organic layer 311, an m-th mesoporous layer 312, and an m-th inorganic layer 313, where 2≤m<M, and the second to the M-th mesoporous layers 312 all contain moisture. This further enhances the barrier effect of the thin film 300 against water entering from the external environment, thereby improving the encapsulation effect on the device body 200.

[0028] Optionally, the moisture content of each mesoporous layer 312 increases sequentially along the direction from the second layer to the Mth layer. That is, the moisture content increases sequentially from the second layer to the Mth layer.

[0029] Understandably, since the outermost inorganic layer 313 of the optoelectronic device itself has a certain water vapor barrier effect, the vapor pressure of water that permeates from the external environment through the outermost inorganic layer 313 (i.e., the Mth inorganic layer 313) into the outermost mesoporous layer 312 (i.e., the Mth mesoporous layer 312) is lower than the water vapor pressure in the outermost mesoporous layer 312. Therefore, external water will be blocked by the outermost mesoporous layer 312. Similarly, by setting a gradient in the water content of each mesoporous layer 312, and with the presence of other inorganic layers 313, it can be ensured that less and less water permeates into the inner mesoporous layer 312, and the corresponding vapor pressure is lower than the water vapor pressure in the current mesoporous layer 312. This allows the optoelectronic device to achieve an excellent water vapor barrier effect. In addition, the low water content of the inner mesoporous layer 312 ensures that water from the optoelectronic device itself cannot permeate through the mesoporous layer 312 and the inorganic layer 313 into the device body 200. In short, the moisture content in each mesoporous layer 312 increases gradually from the inner layer to the outer layer. However, the moisture content passing through the inorganic layer 313, mesoporous layer 312 and organic layer 311 from the external environment decreases, and its absolute content is lower than that in the mesoporous layer 312. This prevents water with low water vapor pressure from penetrating into the mesoporous layer 312 with high water vapor pressure, thereby achieving more effective barrier against moisture from the external environment and further improving the encapsulation effect of the device body 200.

[0030] Optionally, when M≥3, the moisture content of the m-th mesoporous layer 312 is 0.01% to 1% of its maximum water absorption, and the moisture content of the M-th mesoporous layer 312 is 0.01% to 50% of its maximum water absorption, where 2≤m<M. This effectively blocks moisture from entering from the external environment, reducing the risk of moisture contained in each mesoporous layer 312 seeping into the device body 200. Specifically, the weight ratio of the m-th mesoporous layer 312 before water injection to the weight ratio of the m-th mesoporous layer 312 after water injection is 1:(1.00001~1.0005), for example, it can be 1:1.00001, 1:1.00005, 1:1.00006, 1:1.00007, 1:1.00008, 1:1.00009, 1:1.0001, 1:1.0002, 1:1.0003, 1:1.0004, 1: The ratio of 1.0005 or any range between two values ​​is 1:(1.00001 to 1.025). For example, it can be 1:1.00001, 1:1.00005, 1:1.0001, 1:1.0005, 1:1.001, 1:1.0005, 1:1.001, 1:1.005, 1:1.01, 1:1.025 or any range between two values.

[0031] For example, the moisture content of the m-th mesoporous layer 312 can be 0.01%, 0.02%, 0.03%, 0.04%, 0.05%, 0.06%, 0.07%, 0.08%, 0.09%, 1% of the maximum water absorption of the m-th mesoporous layer 312, or any range between two values, etc., and the moisture content of the M-th mesoporous layer 312 can be 0.011%, 0.1%, 0.5%, 1%, 5%, 10%, 15%, 20%, 25%, 30%, 35%, 40%, 45%, 50% of the maximum water absorption of the M-th mesoporous layer 312, or any range between two values, etc., specifically set according to actual needs, as long as the requirement that the moisture content of the mesoporous layer 312 increases sequentially from the second mesoporous layer 312 to the M-th mesoporous layer 312 can be met. Preferably, the moisture content of the Mth mesoporous layer 212 is 0.01% to 10% of the maximum water absorption of the Mth mesoporous layer 212.

[0032] In some embodiments of this application, the material of each mesoporous layer 312 may be independently selected from one or more of alumina, silicon oxide, aluminum phosphate, silicoaluminophosphate and cobalt chloride.

[0033] Optionally, the thickness of each mesoporous layer 312 can be independently between 10 nm and 1 μm. For example, the thickness of each mesoporous layer 312 can be independently 10 nm, 50 nm, 100 nm, 150 nm, 200 nm, 250 nm, 310 nm, 350 nm, 400 nm, 450 nm, 500 nm, 550 nm, 600 nm, 650 nm, 700 nm, 750 nm, 800 nm, 850 nm, 900 nm, 950 nm, 1 μm, or any range between two values, and can be set according to actual needs.

[0034] Optionally, the average pore size of each mesoporous layer 312 is 5 nm to 60 nm. For example, the average pore size of each mesoporous layer 312 can be 5 nm, 10 nm, 15 nm, 20 nm, 25 nm, 30 nm, 35 nm, 40 nm, 45 nm, 50 nm, 55 nm, 60 nm, or any range between two values, and can be set according to actual needs. By controlling the average pore size of the mesoporous layer 312 within the above range, the mesoporous layer 312 has good adsorption capacity, thereby better eliminating water vapor and oxygen introduced between the organic layer 311 and the inorganic layer 313.

[0035] In some embodiments of this application, the material of each organic layer 311 may be independently selected from one or more of acrylic resin, epoxy resin, polyethylene terephthalate (PET), polyimide (PI), polyethylene naphthalate (PEN), and polydimethylsiloxane (PDMS).

[0036] Optionally, the thickness of each organic layer 311 can be independently 10nm to 5µm. For example, the thickness of each organic layer 311 can be 10nm, 50nm, 100nm, 150nm, 200nm, 250nm, 310nm, 350nm, 400nm, 450nm, 500nm, 550nm, 600nm, 650nm, 700nm, 750nm, 800nm, 850nm, 900nm, 950nm, 1μm, 1.5μm, 2μm, 2.5μm, 3μm, 3.5μm, 4μm, 4.5μm, 5μm, or any range between two values, and can be set according to actual needs.

[0037] In some embodiments of this application, the material of each inorganic layer 313 can be independently selected from metal oxides and metal nitrides. The metal oxide can be one or more of SiOx, AlOx, TiOx, ZrOx, HfOx, and TaOx, and the metal nitride can be one or more of AlN, BN, TiN, and SiNx.

[0038] Optionally, the thickness of each inorganic layer 313 can be independently 10nm to 5µm. For example, the thickness of each inorganic layer 313 can be 10nm, 50nm, 100nm, 150nm, 200nm, 250nm, 310nm, 350nm, 400nm, 450nm, 500nm, 550nm, 600nm, 650nm, 700nm, 750nm, 800nm, 850nm, 900nm, 950nm, 1μm, 1.5μm, 2μm, 2.5μm, 3μm, 3.5μm, 4μm, 4.5μm, 5μm, or any range between two values, and can be set according to actual needs.

[0039] This application also provides an optoelectronic device, such as Figure 2 and Figure 3 As shown, the optoelectronic device includes a substrate 100, a device body 200, and a thin film 300 stacked together. The thin film 300 includes M layers of barrier units 310 stacked together. Each barrier unit 310 includes an organic layer 311, a mesoporous layer 312, and an inorganic layer 313 stacked together. In the same barrier unit 310, the organic layer 311 is closer to the device body 200 than the inorganic layer 313. Here, M is an integer greater than or equal to 2. That is, if the thin film 300 includes at least two organic layers 311, at least two mesoporous layers 312, and at least two inorganic layers 313, then the optoelectronic device includes a substrate 100, a device body 200, at least two organic layers 311, at least two mesoporous layers 312, and at least two inorganic layers 313. The optoelectronic device provided in this application embodiment is constructed by stacking a substrate 100, a device body 200, and a thin film 300. Each barrier unit 310 in the thin film 300 includes a stacked organic layer 311, a mesoporous layer 312, and an inorganic layer 313. The organic layer 311 of the same barrier unit 310 is closer to the device body 200 than the inorganic layer 313. Since the inorganic layer 313 has a certain water and oxygen barrier effect, and the mesoporous layer 312 has multiple voids (e.g., pores or gaps), even if water vapor and oxygen from the external environment are introduced into the optoelectronic device, they can be blocked by the inorganic layer 313. Furthermore, the presence of the mesoporous layer 312 allows water vapor and oxygen to enter the voids of the mesoporous layer 312, further blocking water vapor and oxygen from the external environment, thereby improving the encapsulation effect of the device body 200. In addition, the presence of the mesoporous layer 312 also gives the optoelectronic device good heat dissipation performance.

[0040] In some embodiments of this application, 2 ≤ M ≤ 100, and preferably, 2 ≤ M ≤ 20. By controlling the number of barrier units 310 of the thin film 300 within the above range, production costs can be reduced while ensuring the water and oxygen barrier effect.

[0041] Specifically, the barrier unit of the Mth layer is defined as comprising the stacked organic layer 311, the mesoporous layer 312, and the inorganic layer 313; the barrier unit of the Mth layer is further away from the device body 200 than the barrier unit of the (M-1)th layer, that is, the thin film 300 includes the stacked first barrier unit 310, ... and the Mth barrier unit 310, that is, the thin film 300 includes the stacked first mesoporous layer 312, the first inorganic layer 313, ... 13……The Mth organic layer 311, the Mth mesoporous layer 312 and the Mth inorganic layer 313; then the optoelectronic device includes a substrate 100, a device body 200, a first barrier unit 310……and an Mth barrier unit 310 stacked together, that is, the optoelectronic device includes a substrate 100, a device body 200, a first mesoporous layer 312, a first inorganic layer 313……the Mth organic layer 311, the Mth mesoporous layer 312 and the Mth inorganic layer 313 stacked together.

[0042] For example, such as Figure 3 As shown, when M=2, the thin film 300 includes a first organic layer 311, a first mesoporous layer 312, a first inorganic layer 313, a second organic layer 311, a second mesoporous layer 312, and a second inorganic layer 313 stacked sequentially. The optoelectronic device then includes a substrate 100, a device body 200, a first organic layer 311, a first mesoporous layer 312, a first inorganic layer 313, a second organic layer 311, a second mesoporous layer 312, and a second inorganic layer 313 stacked sequentially. Similarly, when M≥3, the thin film 300 includes a first organic layer 311, a first mesoporous layer 312, a first inorganic layer 313, a second organic layer 311, a second mesoporous layer 312, and a second inorganic layer 313 stacked sequentially. The optoelectronic device comprises a device body 200, a first organic layer 311, a first mesoporous layer 312, a first inorganic layer 313, a second organic layer 311, a second mesoporous layer 312, a second inorganic layer 313, ... an Mth organic layer 311, an Mth mesoporous layer 312, and an Mth inorganic layer 313, which are stacked sequentially.

[0043] In some embodiments of this application, the mesoporous layer 312 of the Mth barrier unit contains moisture along the direction of the thin film 300 away from the device body 200, that is, the Mth barrier mesoporous layer 312 contains a certain amount of moisture. It should be noted that the mesoporous layer 312 closest to the device body 200 is the first mesoporous layer 312, and along the direction of the thin film 300 away from the device body 200, the other mesoporous layers 312 are sequentially the second mesoporous layer 312, the second mesoporous layer 312... the Mth mesoporous layer 312, and the Mth mesoporous layer 312 is the mesoporous layer 312 furthest from the device body 200 (i.e., the outermost mesoporous layer 312). It is understandable that, since the outermost inorganic layer 313 of the optoelectronic device has a certain barrier effect, the moisture content of water vapor entering the optoelectronic device through the outermost inorganic layer 313 is at a low level (i.e., the water vapor pressure is low). This application sets the outermost mesoporous layer 312 (i.e., the Mth mesoporous layer 312) to contain a certain amount of moisture, so that the water vapor pressure of the outermost mesoporous layer 312 is high. Low vapor pressure water vapor that seeps into the optoelectronic device from the outside is difficult to pass through the outermost mesoporous layer 312, thereby achieving an excellent water vapor barrier effect.

[0044] It is important to note that since the first mesoporous layer 312 is separated from the device body 200 by only one organic layer 311, if the first mesoporous layer 312 contains a certain amount of moisture, the moisture in the first mesoporous layer 312 may pass through the first organic layer 311 and reach the device body 200. Therefore, the first mesoporous layer 312 does not contain a certain amount of moisture to avoid the moisture in the first mesoporous layer 312 reaching the device body 200 and adversely affecting the performance of the device body 200. At the same time, this design is also to ensure that even if the optoelectronic device itself suffers a certain degree of physical damage (the probability of the first mesoporous layer 312 being damaged is small in the case of incomplete physical damage), the first mesoporous layer 312 can still block water in the outer structure and water in the external environment, thereby improving the encapsulation effect of the device body 200.

[0045] Optionally, the moisture content of the Mth mesoporous layer 312 is 0.01% to 50% of its maximum water absorption capacity. This effectively blocks moisture from entering from the external environment, reducing the risk of moisture contained in the Mth mesoporous layer 312 seeping into the device body 200. The maximum water absorption capacity of the mesoporous layer 312 can be measured by fully exposing it to an atmosphere of a certain humidity and measuring the weight change.

[0046] For example, the moisture content of the Mth mesoporous layer 312 can be 0.01%, 0.1%, 0.5%, 1%, 5%, 10%, 15%, 20%, 25%, 30%, 35%, 40%, 45%, 50% of the maximum water absorption of the Mth mesoporous layer 312, or any range between two values, and can be set according to actual needs. Preferably, the moisture content of the Mth mesoporous layer 212 is 0.01% to 10% of the maximum water absorption of the Mth mesoporous layer 212.

[0047] In some embodiments of this application, when M≥3, the second mesoporous layer 312 to the Mth mesoporous layer 312 contain moisture along the direction of the thin film 300 away from the device body 200, thereby further enhancing the barrier effect of the thin film 300 against water entering from the external environment, so as to improve the encapsulation effect of the device body 200.

[0048] Optionally, the moisture content increases sequentially from the second mesoporous layer 312 to the Mth mesoporous layer 312. It is understandable that, since the outermost inorganic layer 313 of the optoelectronic device itself has a certain water vapor barrier effect, the vapor pressure of water permeating from the external environment through the outermost inorganic layer 313 (i.e., the Mth inorganic layer 313) into the outermost mesoporous layer 312 (i.e., the Mth mesoporous layer 312) is lower than the water vapor pressure within the outermost mesoporous layer 312. Therefore, external moisture will be blocked by the outermost mesoporous layer 312. Similarly, by setting a gradient in the moisture content of each mesoporous layer 312, and with the presence of other inorganic layers 313, it can be ensured that less and less moisture permeates into the inner mesoporous layer 312, and that the corresponding vapor pressure is lower than the water vapor pressure within the current mesoporous layer 312. This allows the optoelectronic device to achieve an excellent water vapor barrier effect overall. Furthermore, the low moisture content of the inner mesoporous layer 312 ensures that moisture from the optoelectronic device itself cannot penetrate the mesoporous layer 312 and the inorganic layer 313 into the device body 200. In short, the moisture content in each mesoporous layer 312 increases gradually from the inner to the outer layers, but the amount of moisture passing through the inorganic layer 313, mesoporous layer 312, and organic layer 311 from the external environment decreases, and its absolute content is lower than that in the mesoporous layer 312. This prevents water with low water vapor pressure from penetrating into the mesoporous layer 312 with higher water vapor pressure, thus achieving more effective barrier against moisture from the external environment and further improving the encapsulation effect of the device body 200.

[0049] In some embodiments of this application, when M≥3, the moisture content of the m-th mesoporous layer 312 is 0.01% to 1% of the maximum water absorption of the m-th mesoporous layer 312, and the moisture content of the M-th mesoporous layer 312 is 0.01% to 50% of the maximum water absorption of the M-th mesoporous layer 312, where 2≤m<M. Therefore, while effectively blocking moisture from entering from the external environment, the risk of moisture contained in each mesoporous layer 312 penetrating into the device body 200 can be reduced.

[0050] For example, the moisture content of the m-th mesoporous layer 312 can be 0.01%, 0.02%, 0.03%, 0.04%, 0.05%, 0.06%, 0.07%, 0.08%, 0.09%, 1% of the maximum water absorption of the m-th mesoporous layer 312, or any range between two values, etc., and the moisture content of the M-th mesoporous layer 312 can be 0.011%, 0.1%, 0.5%, 1%, 5%, 10%, 15%, 20%, 25%, 30%, 35%, 40%, 45%, 50% of the maximum water absorption of the M-th mesoporous layer 312, or any range between two values, etc., specifically set according to actual needs, as long as the requirement that the moisture content of the mesoporous layer 312 increases sequentially from the second mesoporous layer 312 to the M-th mesoporous layer 312 can be met. Preferably, the moisture content of the Mth mesoporous layer 212 is 0.01% to 10% of the maximum water absorption of the Mth mesoporous layer 212.

[0051] It is understood that the optoelectronic device of this application can adjust the position, number of layers (including the total number of mesoporous layers 312 and the number of mesoporous layers 312 containing water) and moisture content gradient of the mesoporous layer 312 according to the usage environment and water resistance requirements of the device body 200, so as to meet the encapsulation effect requirements at low cost.

[0052] Optionally, the material of each mesoporous layer 312 may be independently selected from one or more of alumina, silicon oxide, aluminophosphate, silicoaluminophosphate and cobalt chloride.

[0053] Optionally, the thickness of each mesoporous layer 312 can be independently between 10 nm and 1 μm. For example, the thickness of each mesoporous layer 312 can be independently 10 nm, 50 nm, 100 nm, 150 nm, 200 nm, 250 nm, 310 nm, 350 nm, 400 nm, 450 nm, 500 nm, 550 nm, 600 nm, 650 nm, 700 nm, 750 nm, 800 nm, 850 nm, 900 nm, 950 nm, 1 μm, or any range between two values, and can be set according to actual needs. By controlling the thickness of each mesoporous layer 312 within the above range, the mesoporous layer 312 has good adsorption capacity, thereby better eliminating moisture and oxygen introduced between the organic layer 311 and the inorganic layer 313, thus improving the encapsulation effect of the device body 200.

[0054] Optionally, the average pore size of each mesoporous layer 312 is 5nm to 60nm. For example, the average pore size of each mesoporous layer 312 can be 5nm, 10nm, 15nm, 20nm, 25nm, 30nm, 35nm, 40nm, 45nm, 50nm, 55nm, 60nm, or any range between two values, and can be set according to actual needs. By controlling the average pore size of each mesoporous layer 312 within the above range, each mesoporous layer 312 has good adsorption capacity, thereby better eliminating water vapor and oxygen introduced between the organic layer 311 and the inorganic layer 313, thus improving the encapsulation effect of the device body 200.

[0055] Optionally, the material of each organic layer 311 may be independently selected from one or more of acrylic resin, epoxy resin, polyethylene terephthalate (PET), polyimide (PI), polyethylene naphthalate (PEN), and polydimethylsiloxane (PDMS).

[0056] Optionally, the thickness of each organic layer 311 can be independently 10nm to 5µm. For example, the thickness of each organic layer 311 can be 10nm, 50nm, 100nm, 150nm, 200nm, 250nm, 310nm, 350nm, 400nm, 450nm, 500nm, 550nm, 600nm, 650nm, 700nm, 750nm, 800nm, 850nm, 900nm, 950nm, 1μm, 1.5μm, 2μm, 2.5μm, 3μm, 3.5μm, 4μm, 4.5μm, 5μm, or any range between two values, and can be set according to actual needs.

[0057] Optionally, the material of each inorganic layer 313 can be independently selected from metal oxides and metal nitrides. The metal oxide can be one or more of SiOx, AlOx, TiOx, ZrOx, HfOx and TaOx, and the metal nitride can be one or more of AlN, BN, TiN and SiNx.

[0058] Optionally, the thickness of each inorganic layer 313 can be independently 10nm to 5µm. For example, the thickness of each inorganic layer 313 can be 10nm, 50nm, 100nm, 150nm, 200nm, 250nm, 310nm, 350nm, 400nm, 450nm, 500nm, 550nm, 600nm, 650nm, 700nm, 750nm, 800nm, 850nm, 900nm, 950nm, 1μm, 1.5μm, 2μm, 2.5μm, 3μm, 3.5μm, 4μm, 4.5μm, 5μm, or any range between two values, and can be set according to actual needs.

[0059] In some embodiments of this application, such as Figure 4 and Figure 5 As shown, the device body 200 includes a first electrode 210, a light-emitting layer 220 and a second electrode 230 stacked together. The light-emitting layer 220 may include one or more of a red light-emitting layer 220, a green light-emitting layer 220 and a blue light-emitting layer 220.

[0060] In this design, one of the first electrode 210 and the second electrode 230 is the anode and the other is the cathode. The anode provides hole carriers, and the cathode provides electron carriers. Optionally, the thickness of the anode ranges from 10 nm to 100 nm, for example, the thickness of the anode can be 10 nm, 30 nm, 40 nm, 50 nm, 60 nm, 80 nm, or 100 nm, etc.; the thickness of the cathode ranges from 15 nm to 100 nm, for example, the thickness of the cathode can be 15 nm, 30 nm, 40 nm, 50 nm, 60 nm, 80 nm, 100 nm, or any range between two values, etc., and can be set according to actual needs.

[0061] Optionally, the first electrode 210 and the second electrode 230 are each independently selected from one or more of the following composite electrodes: a metal electrode, a carbon electrode, and a doped or undoped metal oxide electrode; wherein, the material of the metal electrode is selected from at least one of Al, Ag, Cu, Mo, Au, Ba, Ca, and Mg, for example, a Mg / Ag alloy; the material of the carbon electrode is selected from at least one of graphite, carbon nanotubes, graphene, and carbon fibers; and the material of the doped or undoped metal oxide electrode is selected from ITO, ZTO, IZO, ZnO, and GIZO. The composite electrode material is selected from at least one of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2, and TiO2 / Al / TiO2.

[0062] Optionally, the material of the light-emitting layer 220 may include organic light-emitting materials or quantum dot light-emitting materials. The organic light-emitting material is selected from one or more of the following: 4,4'-bis(N-carbazole)-1,1'-biphenyl:tris[2-(p-tolyl)pyridine-C2,N)iridium(III), 4,4',4”-tris(carbazole-9-yl)triphenylamine:tris[2-(p-tolyl)pyridine-C2,N)iridium, diaromatic anthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials and DBP fluorescent materials, polyacetylene and its derivatives, poly(p-phenylene) and its derivatives, polythiophene and its derivatives, and polyfluorene and its derivatives.The quantum dot luminescent material is selected from one or more of single-structure quantum dots and core-shell structure quantum dots. The single-structure quantum dot material is selected from one or more of group II-VI compounds, group IV-VI compounds, group III-V compounds, and group I-III-VI compounds. The group II-VI compounds are selected from CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, and CdZnTe. CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe, wherein the IV-VI group compounds are selected from SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, and HgZnSTe. One or more of SnPbSeTe and SnPbSTe, and III-V compounds selected from GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInN One or more of As, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb; and one or more of Group I-III-VI compounds selected from CuInS2, CuInSe2, and AgInS2. The core of the core-shell quantum dot includes any one of the above-mentioned single-structure quantum dots, and the shell material of the core-shell quantum dot includes one or more of CdS, CdTe, CdSeTe, CdZnSe, CdZnS, CdSeS, ZnSe, ZnSeS, ZnS, and the above-mentioned single-structure quantum dots.Optionally, the thickness of the light-emitting layer 220 can be in the range of 10nm to 60nm. For example, the thickness of the light-emitting layer 220 can be 10nm, 15nm, 20nm, 25nm, 30nm, 40nm, 50nm, 60nm or any range between two values, etc., and can be set according to actual needs.

[0063] In some embodiments of this application, such as Figure 4 As shown, the device body 200 further includes an electronic functional layer 240 and / or a hole functional layer 250, that is, the device body 200 may also include at least one of the electronic functional layer 240 and the hole functional layer 250. The electronic functional layer 240 is disposed between the light-emitting layer 220 and the cathode, and the hole functional layer 250 is disposed between the light-emitting layer 220 and the anode.

[0064] In some embodiments of this application, such as Figure 5 As shown, the electronic functional layer 240 may include an electron transport layer 241 with electron transport properties and / or an electron injection layer 242 with electron injection properties; that is, the electronic functional layer 240 may include one or both of the electron transport layer 241 and the electron injection layer 242. In embodiments where the electronic functional layer 240 includes both the electron transport layer 241 and the electron injection layer 242, the electron transport layer 241 is disposed between the light-emitting layer 220 and the electron injection layer 242.

[0065] Optionally, the material of the electron transport layer 241 can be selected from one or more of inorganic electron transport materials and organic electron transport materials. The inorganic electron transport material is selected from, but is not limited to, one or more of metal oxides, doped metal oxides, group IIB-VIA semiconductor materials, group IIIA-VA semiconductor materials, and group IB-IIIA-VIA semiconductor materials. Specifically, the metal oxide is selected from one or more of ZnO, TiO2, SnO2, Al2O3, Ga2O3, V2O5, V3O8, CrO3, WO3, Fe2O3, Fe3O4, CuO, MoO2, Nb2O5, BaO, MoO3, CdO, BaO, Ta2O5, BaTiO3, and PbCrO4; the doped metal oxide includes ZnO, TiO2, SnO2, Al2O3, Ga2O3, V2O5, V3O8, CrO3, WO3, Fe2O3, Fe3O4, CuO, MoO2, etc. The semiconductor materials include one or more of Nb₂O₅, BaO, MoO₃, CdO, BaO, Ta₂O₅, BaTiO₃, and PbCrO₄, and the doping elements include one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, Ga, and Sn; the IIB-VIA group semiconductor materials include one or more of ZnS, ZnSe, and CdS; the IIIB-VA group semiconductor materials include one or more of InP and GaP; and the IB-IIIB-VIA group semiconductor materials include one or more of CuInS and CuGaS. The organic electron transport materials include, but are not limited to, one or more of quinoxaline compounds, imidazole compounds, triazine compounds, fluorene-containing compounds, and hydroxyquinoline compounds.

[0066] Optionally, the thickness of the electron transport layer 241 can range from 10nm to 100nm. For example, the thickness of the electron transport layer 241 can be 10nm, 20nm, 30nm, 40nm, 50nm, 60nm, 70nm, 80nm, 90nm, 100nm or any range between two values, and can be set according to actual needs.

[0067] Optionally, the material of the electron injection layer 242 may be selected from one or more of LiF, MgP, MgF2, Al2O3, Ga2O3, ZnO, Cs2CO3, RbBr, Rb2CO3 and LiF / Yb.

[0068] Optionally, the thickness of the electron injection layer 242 can range from 10nm to 30nm. For example, the thickness of the electron injection layer 242 can be 10nm, 15nm, 20nm, 25nm, 30nm or any range between two values, and can be set according to actual needs.

[0069] In some embodiments of this application, such as Figure 5 As shown, the hole functional layer 250 may include a hole transport layer 251 with hole transport capabilities and / or a hole injection layer 252 with hole injection capabilities; that is, the hole functional layer 250 may include one or both of the hole transport layer 251 and the hole injection layer 252. In embodiments where the hole functional layer 250 includes both the hole transport layer 251 and the hole injection layer 252, the hole transport layer 251 is disposed between the light-emitting layer 220 and the hole injection layer 252.

[0070] Optionally, the material of the hole transport layer 251 may be selected from 4,4'-N,N'-dicarbazolyl-biphenyl (CBP), poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA), N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4”-diamine (α-NPD), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine (TPD), poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)biphenylamine) (Poly-TPD), N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)biphenyl 4,4'-spiro(spiro-TPD), N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine (DNTPD), 4,4',4'-tris(N-carbazolyl)-triphenylamine (TCTA), 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine (m-MTDATA), poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))] (TFB), poly(N-vinylcarbazole) (PVK) and its derivatives, N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4-4 '-Diamine (NPB), SpiroNPB, Poly(phenylenevinylene) (PPV), Poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV), Poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylenevinylene] (MOMO-PPV), 2,2',7,7'-Tetratetra[N,N-di(4-methoxyphenyl)amino]-9,9'-spirodifluorene (spiro-omeTAD), 4,4'-cyclohexylbis[N,N-di(4-methylphenyl)aniline] (TAPC), 1,3-Di(carbazole-9-yl)benzene (MCP), Polyaniline, Polypyrrole, poly(p-)phenylenevinylene, aromatic tertiary amine, polynuclear aromatic tertiary amine, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compounds, N,N,N',N'-tetraarylbenzidine, PEDOT:PSS and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, doped graphene, undoped graphene, C60, doped or undoped NiO, doped or undoped MoO3, doped or undoped WO3, doped or undoped V2O5, doped or undoped p-type gallium nitride, doped or undoped CrO3, doped or undoped CuO, or one or more of these.

[0071] Optionally, the thickness of the hole transport layer 251 can range from 10nm to 50nm. For example, the thickness of the hole transport layer 251 can be 10nm, 15nm, 20nm, 25nm, 30nm, 35nm, 40nm, 45nm, 50nm, or any range between two values. The specific thickness can be set according to actual needs.

[0072] Optionally, the material of the hole injection layer 252 may be selected from one or more of 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazabenzophenanthrene (HAT-CN), PEDOT, PEDOT:PSS, PEDOT:PSS derivatives doped with s-MoO3 (PEDOT:PSS:s-MoO3), 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine (m-MTDATA), tetracyanoquinone dimethyl ether (F4-TCQN), copper phthalocyanine, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, molybdenum sulfide, tungsten sulfide, and copper oxide.

[0073] Optionally, the thickness of the hole injection layer 252 can range from 10nm to 60nm. For example, the thickness of the hole injection layer 252 can be 10nm, 15nm, 20nm, 25nm, 30nm, 35nm, 40nm, 45nm, 50nm, 55nm, 60nm or any range between two values, etc. The specific thickness can be set according to actual needs.

[0074] It is understandable that, in addition to the aforementioned functional layers, the device body 200 may also have additional functional layers that are commonly used in the device body 200 to improve the performance of optoelectronic devices, such as hole blocking layers and interface modification layers. The materials and thicknesses of the various functional layers of the device body 200 can be adjusted according to the light emission requirements of the device body 200.

[0075] In some embodiments of this application, the device body 200 is a quantum dot light-emitting diode. The device body 200 can be a quantum dot light-emitting diode with a positive structure or an inverted structure. The substrate of the quantum dot light-emitting diode with a positive structure is connected to the anode, and the substrate of the quantum dot light-emitting diode with an inverted structure is connected to the cathode.

[0076] This application also provides a method for fabricating an optoelectronic device, which is applied to the fabrication of the optoelectronic device described above. For example... Figure 6 As shown, the method for fabricating the optoelectronic device provided in this application includes the following steps:

[0077] S100, Provide device body 200. Specifically, step S100 may include providing a substrate 100 on which the device body 200 is provided.

[0078] S200: An M-layer barrier unit 310 is disposed on the device body 200. The barrier unit 310 includes an organic layer 311, a mesoporous layer 312, and an inorganic layer 313 stacked together. In the same barrier unit 310, the organic layer 311 is closer to the device body 200 than the inorganic layer 313, thus obtaining an optoelectronic device; where M is an integer greater than or equal to 2. That is, at least two organic layers 311, at least two mesoporous layers 312, and at least two inorganic layers 313 are disposed on the device body 200.

[0079] Specifically, when the first barrier unit 310 is disposed on the device body 200, it includes: sequentially disposing a first organic layer 311, a first mesoporous layer 312, and a first inorganic layer 313 on the device body 200; when the second to Mth barrier units 310 are disposed on the device body 200, it includes: sequentially disposing an organic layer 311, a mesoporous layer 312, and an inorganic layer 313 on the inorganic layer 313 of the previous barrier unit 310. For example, when M=2, step S200 includes: sequentially disposing a first organic layer 311, a first mesoporous layer 312, a first inorganic layer 313, a second organic layer 311, a second mesoporous layer 312, and a second inorganic layer 313 on the device body 200. Similarly, when M≥3, step S200 includes: sequentially depositing a first organic layer 311, a first mesoporous layer 312, a first inorganic layer 313, a second organic layer 311, a second mesoporous layer 312, a second inorganic layer 313... a Mth organic layer 311, a Mth mesoporous layer 312 and a Mth inorganic layer 313 on the device body 200.

[0080] In some embodiments of this application, when the Mth barrier unit 310 is disposed on the device body 200, moisture is disposed in the Mth mesoporous layer 312. That is, a certain amount of moisture is disposed in the mesoporous layer 312 of the Mth barrier unit 310. It should be noted that the mesoporous layer 312 closest to the device body 200 is the first mesoporous layer 312. Along the direction away from the device body 200 of the thin film 300, the other mesoporous layers 312 are sequentially the second mesoporous layer 312, the third mesoporous layer 312... the Mth mesoporous layer 312, and the Mth mesoporous layer 312 is the mesoporous layer 312 furthest from the device body 200 (i.e., the outermost mesoporous layer 312). It is understandable that, since the outermost inorganic layer 313 of the optoelectronic device has a certain barrier effect, the moisture content of water vapor entering the optoelectronic device through the outermost inorganic layer 313 is at a low level (i.e., the water vapor pressure is low). This application sets a certain amount of moisture in the outermost mesoporous layer 312 (i.e., the Mth mesoporous layer 312), so that the water vapor pressure of the outermost mesoporous layer 312 is high. Low vapor pressure water vapor that seeps into the optoelectronic device from the outside is difficult to pass through the outermost mesoporous layer 312, thereby achieving an excellent water vapor barrier effect.

[0081] The water content in the mesoporous layer 312 can be achieved by: fully exposing the mesoporous material to a certain humidity level, allowing water to enter the mesopores of the material. This humidity level corresponds to the saturated vapor pressure of water at a specific temperature. Since the saturated vapor pressure of water varies at different temperatures, different amounts of water can be incorporated into the mesoporous material. The water content in the mesoporous material can be calculated by determining the total volume of the mesopores. When preparing the mesoporous layer 312 using a solution method, the above method is first used to introduce a certain amount of water into the mesoporous material. Then, the water-containing mesoporous material is dispersed in an organic solvent, and a mesoporous material film is prepared using the solution method. This mesoporous material film is the mesoporous layer 312.

[0082] Optionally, the moisture content of the Mth mesoporous layer 312 is 0.01% to 50% of the maximum water absorption capacity of the Mth mesoporous layer 312. This can reduce the risk of moisture in the Mth mesoporous layer 312 penetrating into the device body 200 while effectively blocking moisture from entering from the external environment.

[0083] For example, the moisture content of the Mth mesoporous layer 312 is 0.01%, 0.1%, 0.5%, 1%, 5%, 10%, 15%, 20%, 25%, 30%, 35%, 40%, 45%, 50% of the maximum water absorption of the Mth mesoporous layer 312, or any range between two values, and can be set according to actual needs. Preferably, the moisture content of the Mth mesoporous layer 212 is 0.01% to 10% of the maximum water absorption of the Mth mesoporous layer 212.

[0084] In some embodiments of this application, when M≥3, the step of setting the second to Mth barrier units 310 on the device body 200 further includes: setting moisture in all of the second to Mth mesoporous layers 312. That is, along the direction of the thin film 300 away from the device body 200, a certain amount of moisture is set in all of the second to Mth mesoporous layers 312, thereby further enhancing the barrier effect against water entering from the external environment, and improving the encapsulation effect of the device body 200.

[0085] Furthermore, the moisture content increases sequentially from the second mesoporous layer 312 to the Mth mesoporous layer 312. It is understandable that, since the outermost inorganic layer 313 of the optoelectronic device itself has a certain water vapor barrier effect, the vapor pressure of water permeating from the external environment through the outermost inorganic layer 313 (i.e., the Mth inorganic layer 313) into the outermost mesoporous layer 312 (i.e., the Mth mesoporous layer 312) is lower than the water vapor pressure within the outermost mesoporous layer 312. Therefore, external moisture will be blocked by the outermost mesoporous layer 312. Similarly, by setting a gradient in the moisture content of each mesoporous layer 312, and with the presence of other inorganic layers 313, it can be ensured that less and less moisture permeates into the inner mesoporous layer 312, and that the corresponding vapor pressure is lower than the water vapor pressure within the current mesoporous layer 312. This allows the optoelectronic device to achieve an excellent water vapor barrier effect overall. Furthermore, the low moisture content of the inner mesoporous layer 312 ensures that moisture from the optoelectronic device itself cannot penetrate the mesoporous layer 312 and the inorganic layer 313 into the device body 200. In short, the moisture content in each mesoporous layer 312 increases gradually from the inner to the outer layers, but the amount of moisture passing through the inorganic layer 313, mesoporous layer 312, and organic layer 311 from the external environment decreases, and its absolute content is lower than that in the mesoporous layer 312. This prevents water with low water vapor pressure from penetrating into the mesoporous layer 312 with higher water vapor pressure, thus achieving more effective barrier against moisture from the external environment and further improving the encapsulation effect of the device body 200.

[0086] Optionally, the moisture content of the m-th mesoporous layer 312 is 0.01% to 1% of its maximum water absorption capacity, and the moisture content of the M-th mesoporous layer 312 is 0.01% to 50% of its maximum water absorption capacity, where 2 ≤ m < M. This effectively blocks moisture from entering from the external environment, reducing the risk of moisture infiltrating the device body 200 from the mesoporous layers 312.

[0087] For example, the moisture content of the m-th mesoporous layer 312 can be 0.01%, 0.02%, 0.03%, 0.04%, 0.05%, 0.06%, 0.07%, 0.08%, 0.09%, 1% of the maximum water absorption of the m-th mesoporous layer 312, or any range between two values, etc., and the moisture content of the M-th mesoporous layer 312 can be 0.011%, 0.1%, 0.5%, 1%, 5%, 10%, 15%, 20%, 25%, 30%, 35%, 40%, 45%, 50% of the maximum water absorption of the M-th mesoporous layer 312, or any range between two values, etc., specifically set according to actual needs, as long as the requirement that the moisture content increases sequentially from the second mesoporous layer 312 to the M-th mesoporous layer 312 can be met. Preferably, the moisture content of the Mth mesoporous layer 212 is 0.01% to 10% of the maximum water absorption of the Mth mesoporous layer 212.

[0088] It is understood that the optoelectronic device of this application can adjust the position, number of layers (including the total number of mesoporous layers 312 and the number of mesoporous layers 312 containing water) and the moisture content gradient of the mesoporous layer 312 according to the usage environment and water resistance requirements of the device body 200, so as to meet the encapsulation effect requirements at low cost.

[0089] In some embodiments of this application, the device body 200 includes a first electrode 210, a light-emitting layer 220, and a second electrode 230 stacked together. Step S100 includes: providing a substrate 100, disposing of the first electrode 210 on the substrate 100, disposing of the light-emitting layer 220 on the first electrode 210, and disposing of the second electrode 230 on the light-emitting layer 220. Correspondingly, step S200 includes: disposing of an M-layer barrier unit 310 on the second electrode 230.

[0090] Optionally, the device body 200 further includes an electronic functional layer 240. When the first electrode 210 is the anode and the second electrode 230 is the cathode, step S100 includes: setting the first electrode 210 on the substrate 100, setting a light-emitting layer 220 on the first electrode 210, setting the electronic functional layer 240 on the light-emitting layer 220, and setting the second electrode 230 on the electronic functional layer 240. When the first electrode 210 is the cathode and the second electrode 230 is the anode, step S100 includes: setting the first electrode 210 on the substrate 100, setting the electronic functional layer 240 on the first electrode 210, setting the light-emitting layer 220 on the electronic functional layer 240, and setting the second electrode 230 on the light-emitting layer 220. Correspondingly, step S200 includes: setting an M-layer barrier unit 310 on the second electrode 230.

[0091] Alternatively, the device body 200 may further include a hole functional layer 250. When the first electrode 210 is the anode and the second electrode 230 is the cathode, step S100 includes: setting the first electrode 210 on the substrate 100, setting the hole functional layer 250 on the first electrode 210, setting the light-emitting layer 220 on the hole functional layer 250, and setting the second electrode 230 on the light-emitting layer 220. When the first electrode 210 is the cathode and the second electrode 230 is the anode, step S100 includes: setting the first electrode 210 on the substrate 100, setting the light-emitting layer 220 on the first electrode 210, setting the hole functional layer 250 on the light-emitting layer 220, and setting the second electrode 230 on the hole functional layer 250. Correspondingly, step S200 includes: setting an M-layer barrier unit 310 on the second electrode 230.

[0092] Alternatively, the device body 200 may further include an electronic functional layer 240 and a hole functional layer 250. When the first electrode 210 is the anode and the second electrode 230 is the cathode, step S100 includes: setting the first electrode 210 on the substrate 100, setting the hole functional layer 250 on the first electrode 210, setting the light-emitting layer 220 on the hole functional layer 250, setting the electronic functional layer 240 on the light-emitting layer 220, and setting the second electrode 230 on the electronic functional layer 240. When the first electrode 210 is the cathode and the second electrode 230 is the anode, step S100 includes: setting the first electrode 210 on the substrate 100, setting the electronic functional layer 240 on the first electrode 210, setting the light-emitting layer 220 on the electronic functional layer 240, setting the hole functional layer 250 on the light-emitting layer 220, and setting the second electrode 230 on the hole functional layer 250. Accordingly, step S200 includes: setting an M-layer barrier unit 310 on the second electrode 230.

[0093] Specifically, in the above preparation method, the formation of the organic layer 311, mesoporous layer 312, inorganic layer 313, first electrode 210, second electrode 230, light-emitting layer 220, electronic functional layer 240, and hole functional layer 250 can be achieved using conventional techniques in the art, including but not limited to solution methods and deposition methods. Solution methods include, but are not limited to, spin coating, coating, inkjet printing, blade coating, dip-coating, immersion coating, spraying, roller coating, or casting. Deposition methods include chemical and physical methods. Chemical methods include, but are not limited to, chemical vapor deposition, continuous ion layer adsorption and reaction, anodic oxidation, electrolytic deposition, or co-precipitation. Physical methods include, but are not limited to, thermal evaporation coating, electron beam evaporation coating, magnetron sputtering, multi-arc ion plating, physical vapor deposition, atomic layer deposition, or pulsed laser deposition. When using solution methods to prepare the included layer structures, a drying process is required. This drying process can be an annealing process. The term "annealing process" encompasses all processing techniques that enable a wet film to acquire higher energy, thereby transforming it from a wet film state to a dry state. For example, "annealing process" can refer only to a heat treatment process, which involves heating the wet film to a specific temperature and then holding it for a specific time to allow the solvent in the wet film to fully evaporate. Alternatively, "annealing process" can also include a heat treatment process and a cooling process performed sequentially, whereby the wet film is heated to a specific temperature, held for a specific time to allow the solvent in the first wet film to fully evaporate, and then cooled at an appropriate rate to eliminate residual stress and reduce the risk of layer deformation and cracking in the dried functional layer.

[0094] The materials of each layer, including the organic layer 311, the mesoporous layer 312, the inorganic layer 313, the first electrode 210, the electronic functional layer 240, the second electrode 230, the light-emitting layer 220, and the hole functional layer 250, can be referred to the relevant descriptions above, and will not be repeated here.

[0095] It is understandable that when the device body 200 also includes other functional layers such as an electron blocking layer, a hole blocking layer, and / or an interface modification layer, the fabrication method of the device body 200 may also include the step of forming each functional layer.

[0096] This application also provides a display device, which includes an optoelectronic device, the specific structure of which is described in the above embodiments. Since this display device employs all the technical solutions of all the above embodiments, it possesses at least all the beneficial effects brought about by the technical solutions of the above embodiments, which will not be elaborated upon here.

[0097] This display device can be any electronic product with display function, including but not limited to smartphones, tablets, laptops, digital cameras, digital camcorders, smart wearable devices, smart weighing scales, in-vehicle displays, televisions, or e-book readers. Among them, smart wearable devices can be, for example, smart bracelets, smartwatches, virtual reality (VR) headsets, etc.

[0098] The technical solutions and effects of this application will be described in detail below through specific embodiments and comparative examples. The following embodiments are only some embodiments of this application and are not intended to limit this application.

[0099] Example 1

[0100] This embodiment 1 provides an optoelectronic device, which includes a substrate 100, a device body 200 and a thin film 300 stacked together. The thin film 300 includes two barrier units 310. The barrier unit 310 includes an organic layer 311, a mesoporous layer 312 and an inorganic layer 313 stacked together. In the same barrier unit 310, the organic layer 311 is closer to the device body 200 than the inorganic layer 313.

[0101] Example 2

[0102] This embodiment 2 is basically the same as embodiment 1, except that the barrier unit 310 has three layers.

[0103] Example 3

[0104] This embodiment 3 is basically the same as embodiment 1, except that: along the direction of the thin film 300 away from the device body 200, the mesoporous layer 312 (i.e. the second mesoporous layer 312) in the second barrier unit 310 contains water, and the water content of the second mesoporous layer 312 is 0.01% of the maximum water absorption of the second mesoporous layer 312.

[0105] Example 4

[0106] This embodiment 4 is basically the same as embodiment 3, except that the moisture content of the second mesoporous layer 312 is 5% of the maximum water absorption of the second mesoporous layer 312.

[0107] Example 5

[0108] This embodiment 5 is basically the same as embodiment 3, except that the moisture content of the second mesoporous layer 312 is 10% of the maximum water absorption of the second mesoporous layer 312.

[0109] Example 6

[0110] This embodiment 6 is basically the same as embodiment 3, except that the moisture content of the second mesoporous layer 312 is 20% of the maximum water absorption of the second mesoporous layer 312.

[0111] Example 7

[0112] This embodiment 7 is basically the same as embodiment 3, except that the moisture content of the second mesoporous layer 312 is 30% of the maximum water absorption of the second mesoporous layer 312.

[0113] Example 8

[0114] This embodiment 8 is basically the same as embodiment 3, except that the moisture content of the second mesoporous layer 312 is 40% of the maximum water absorption of the second mesoporous layer 312.

[0115] Example 9

[0116] This embodiment 9 is basically the same as embodiment 3, except that the moisture content of the second mesoporous layer 312 is 50% of the maximum water absorption of the second mesoporous layer 312.

[0117] Example 10

[0118] This embodiment 10 is basically the same as embodiment 3, except that: the barrier unit 310 has three layers, the moisture content of the second mesoporous layer 312 is 0.01% of the maximum water absorption of the second mesoporous layer 312, and the moisture content of the third mesoporous layer 312 is 0.01% of the maximum water absorption of the third mesoporous layer 312.

[0119] Example 11

[0120] This embodiment 11 is basically the same as that of embodiment 10, except that: the moisture content of the second mesoporous layer 312 is 0.01% of the maximum water absorption of the second mesoporous layer 312, and the moisture content of the third mesoporous layer 312 is 5% of the maximum water absorption of the third mesoporous layer 312.

[0121] Comparative Example 1

[0122] Comparative Example 1 provides an optoelectronic device, which includes a substrate, a device body, and two barrier units stacked together. The barrier unit includes an organic layer and an inorganic layer stacked together, and the organic layer in the same barrier unit is closer to the device body than the inorganic layer.

[0123] Water and oxygen transmittance (WVTR) of the optoelectronic devices of Examples 1 to 11 and Comparative Example 1 2The photoelectric devices of Examples 1 to 11 and Comparative Example 1 were tested using a Super-Detect (WG-7S) gas water vapor transmission rate measuring device provided by MORESCO. The results are expressed as WVTR values, and the results are shown in Table 1 below. A lower water vapor transmission rate indicates a better blocking effect.

[0124] Table 1

[0125] <![CDATA[Water oxygen permeability (g / m 2 / day)]]> Example 1 <![CDATA[1*10 -4 ]]> Example 2 <![CDATA[5*10 -5 ]]> Example 3 <![CDATA[6*10 -6 <!-- 14 -->]]> Example 4 <![CDATA[1*10 -6 ]]> Example 5 <![CDATA[2*10 -6 ]]> Example 6 <![CDATA[6*10 -6 ]]> Example 7 <![CDATA[9*10 -6 ]]> Example 8 <![CDATA[1*10 -5 ]]> Example 9 <![CDATA[3*10 -5 ]]> Example 10 <![CDATA[5*10 -6 ]]> Example 11 <![CDATA[9*10 -7 ]]> Comparative Example 1 <![CDATA[5*10 -4 ]]>

[0126] As shown in Table 1, the optoelectronic devices of Examples 1 to 11 all have lower water and oxygen permeability than the optoelectronic device of Comparative Example 1, indicating that the optoelectronic devices of Examples 1 to 11 have better water and oxygen barrier performance and better encapsulation effect.

[0127] A comparison of Examples 1 to 11 shows that the presence of moisture in the outermost mesoporous layer 312, or the presence of moisture in all layers from the second mesoporous layer 312 to the outermost mesoporous layer 312, can reduce the water and oxygen permeability of the optoelectronic device. Furthermore, the water and oxygen permeability gradually decreases as the moisture content in the same mesoporous layer 312 increases. Additionally, by setting the moisture content to increase sequentially from the second mesoporous layer 312 to the outermost mesoporous layer 312, the water and oxygen permeability of the optoelectronic device can be further reduced.

[0128] In the above embodiments, the descriptions of each embodiment have different focuses. For parts not described in detail in a certain embodiment, please refer to the relevant descriptions in other embodiments.

[0129] The thin film, optoelectronic device, and display device provided in the embodiments of this application have been described in detail above. Specific examples have been used to illustrate the principles and implementation methods of this application. The description of the above embodiments is only for the purpose of helping to understand the method and core ideas of this application. At the same time, for those skilled in the art, there will be changes in the specific implementation methods and application scope based on the ideas of this application. Therefore, the content of this specification should not be construed as a limitation of this application.

Claims

1. A thin film, characterized in that, It includes M layers of barrier units stacked together, wherein the barrier unit includes an organic layer, a mesoporous layer and an inorganic layer stacked together, wherein M is an integer greater than or equal to 2.

2. The thin film according to claim 1, characterized in that, The Mth layer barrier unit is defined as comprising the Mth layer organic layer, the Mth layer mesoporous layer and the Mth layer inorganic layer stacked together; the Mth layer mesoporous layer in the Mth layer barrier unit contains moisture.

3. The thin film according to claim 2, characterized in that, The moisture content of the mesoporous layer in the Mth layer is 0.01% to 50% of the maximum water absorption capacity of the mesoporous layer in the Mth layer.

4. The thin film according to claim 2, characterized in that, When M≥3, the m-th barrier unit is defined as comprising the m-th organic layer, the m-th mesoporous layer and the m-th inorganic layer stacked together, 2≤m<M, and the mesoporous layers from the second layer to the M-th layer all contain moisture.

5. The thin film according to claim 4, characterized in that, Along the direction from the second layer of barrier unit to the Mth layer of barrier unit, the moisture content of each mesoporous layer increases sequentially.

6. The thin film according to claim 5, characterized in that, The moisture content of the mesoporous layer in the m-th layer is 0.01% to 1% of the maximum water absorption of the mesoporous layer in the m-th layer, and the moisture content of the mesoporous layer in the M-th layer is 0.01% to 50% of the maximum water absorption of the mesoporous layer in the M-th layer; Preferably, the moisture content of the mesoporous layer in the Mth layer is 0.01% to 10% of the maximum water absorption capacity of the mesoporous layer in the Mth layer.

7. The thin film according to any one of claims 1 to 6, characterized in that, 2≤M≤100, preferably, 2≤M≤20; And / or, the thickness of each of the mesoporous layers is independently 10 nm to 1 μm; And / or, the average pore size of the mesopores in each of the mesoporous layers is independently 5 nm to 60 nm; And / or, the material of each of the mesoporous layers is independently selected from one or more of alumina, silicon oxide, aluminophosphate, aluminosilicate phosphate, and cobalt chloride; And / or, the material of each of the organic layers is independently selected from one or more of acrylic resin, epoxy resin, polyethylene terephthalate, polyimide, polyethylene naphthalate and polydimethylsiloxane; And / or, the thickness of each of the organic layers is independently 10 nm to 5 μm; And / or, the material of each of the inorganic layers is independently selected from metal oxides and metal nitrides, preferably, the metal oxide is one or more of SiOx, AlOx, TiOx, ZrOx, HfOx and TaOx, and the metal nitride is one or more of AlN, BN, TiN and SiNx; And / or, the thickness of each of the inorganic layers is independently 10 nm to 5 μm.

8. An optoelectronic device, characterized in that, The optoelectronic device includes a device body and a thin film stacked together. The thin film includes M layers of barrier units stacked together. Each barrier unit includes an organic layer, a mesoporous layer, and an inorganic layer stacked together. In the same barrier unit, the organic layer is closer to the device body than the inorganic layer. Here, M is an integer greater than or equal to 2.

9. The optoelectronic device according to claim 8, characterized in that, The barrier unit of the Mth layer is defined as comprising the organic layer, the mesoporous layer, and the inorganic layer of the Mth layer stacked together; The barrier unit in layer M is further away from the device body than the barrier unit in layer M-1; and / or The mesoporous layer of the Mth layer in the barrier unit contains moisture; Preferably, the moisture content of the mesoporous layer in the Mth layer is 0.01% to 50% of the maximum water absorption capacity of the mesoporous layer in the Mth layer.

10. The optoelectronic device according to claim 8, characterized in that, When M≥3, all mesoporous layers from the second layer to the Mth layer contain water. Preferably, along the direction away from the device body, the moisture content of the second mesoporous layer to the Mth mesoporous layer increases sequentially; Preferably, the moisture content of the m-th mesoporous layer is 0.01% to 1% of the maximum water absorption of the m-th mesoporous layer, the moisture content of the M-th mesoporous layer is 0.01% to 50% of the maximum water absorption of the M-th mesoporous layer, and 2 ≤ m < M.

11. The optoelectronic device according to claim 9 or 10, characterized in that, The moisture content of the mesoporous layer in the Mth layer is 0.01% to 10% of the maximum water absorption of the mesoporous layer in the Mth layer; And / or, 2≤M≤100, preferably, 2≤M≤20; And / or, the overall thickness of the optoelectronic device is less than or equal to 20 μm; And / or, the thickness of each of the mesoporous layers is independently 10 nm to 1 μm; And / or, the average pore size of the mesopores in each of the mesoporous layers is independently 5 nm to 60 nm; And / or, the material of each of the mesoporous layers is independently selected from one or more of alumina, silicon oxide, aluminophosphate, aluminosilicate phosphate, and cobalt chloride; And / or, the material of each of the organic layers is independently selected from one or more of acrylic resin, epoxy resin, polyethylene terephthalate, polyimide, polyethylene naphthalate and polydimethylsiloxane; And / or, the thickness of each organic layer is independently 10 nm to 5 μm; And / or, the material of each of the inorganic layers is independently selected from metal oxides and metal nitrides, preferably, the metal oxide is one or more of SiOx, AlOx, TiOx, ZrOx, HfOx and TaOx, and the metal nitride is one or more of AlN, BN, TiN and SiNx; And / or, the thickness of each inorganic layer is independently 10nm to 5um.

12. The optoelectronic device according to claim 8, characterized in that, The device body includes a first electrode, a light-emitting layer, and a second electrode stacked together. The second electrode is closer to the thin film than the first electrode. The material of the light-emitting layer includes organic light-emitting materials and / or quantum dot light-emitting materials. The organic light-emitting material is selected from one or more of the following: 4,4'-bis(N-carbazole)-1,1'-biphenyl:tris[2-(p-tolyl)pyridine-C2,N)iridium(III), 4,4',4”-tris(carbazole-9-yl)triphenylamine:tris[2-(p-tolyl)pyridine-C2,N)iridium, diaromatic anthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials and DBP fluorescent materials, polyacetylene and its derivatives, poly(p-phenylene) and its derivatives, polythiophene and its derivatives, and polyfluorene and its derivatives. The quantum dot luminescent material is selected from one or more of single-structure quantum dots and core-shell structure quantum dots. The single-structure quantum dot material is selected from one or more of group II-VI compounds, group IV-VI compounds, group III-V compounds, and group I-III-VI compounds. The group II-VI compounds are selected from CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeS, and HgSeS. One or more of the following compounds: gSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe, wherein the IV-VI compound is selected from SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, Sn SeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe, wherein the III-V compound is selected from GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, and Al One or more of PSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb, wherein the group I-III-VI compounds are selected from one or more of CuInS2, CuInSe2, and AgInS2; The core of the core-shell quantum dot includes any one of the single-structure quantum dots mentioned above, and the shell material of the core-shell quantum dot includes CdS, CdTe, CdSeTe, CdZnSe, CdZnS, CdSeS, ZnSe, ZnSeS, ZnS, and one or more of the single-structure quantum dots mentioned above.

13. A display device, characterized in that, The display device includes the optoelectronic device according to any one of claims 8 to 12.

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