Detection method for potential electric leakage defect of LED device and LED sorting equipment

By applying stress to LED devices to induce the physical degradation of potential defects, which is then transformed into detectable electrical differences, the problem of not being able to identify potential leakage defects in LED devices in the prior art is solved, thus achieving efficient screening and improving device reliability.

CN122076736APending Publication Date: 2026-05-26NANCHANG XINGUANG MING SEMICONDUCTOR CO LTD +2
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Patent Information

Application Number
CN202610385400.1
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2026-03-27
Publication Date
2026-05-26

AI Technical Summary

Technical Problem

Existing technologies cannot effectively identify potential leakage defects in LED devices, resulting in a large number of "zero-time good products" randomly failing in end products, affecting display quality and becoming a bottleneck restricting the mass production and application of Mini/Micro LEDs.

Method used

By applying preset stress to LED devices, physical degradation of micro-defects is induced. Electrical, thermal, mechanical, or environmental stresses are used to excite the migration of metal ions or the generation of conductive filaments, transforming latent defects into detectable electrical differences. The changes in forward voltage and reverse leakage current are calculated to determine potential leakage risks.

Benefits of technology

It enables non-destructive and efficient screening of potential leakage defects, improving the reliability and production yield of LED devices, and reducing the defect rate and after-sales maintenance costs.

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Abstract

The invention discloses a method for detecting potential electric leakage defects of an LED device, and relates to the technical field of semiconductor photoelectric device detection. Aiming at the technical pain point that recessive microdefects (such as a metal migration channel caused by a V-shaped pit and dislocation) cannot be identified by the existing single spectroscopic detection, the invention provides a detection logic of reference parameter acquisition, defect stress excitation, parameter acquisition after excitation and differential analysis and judgment. Specific stress is applied to primarily screened qualified products, ion migration at potential defects is excited in an oriented mode, and hidden electric leakage is dominated. Potential defective products are accurately rejected by calculating parameter drift distances (VFL, IR) before and after stress. The method is not only suitable for interactive screens, but also suitable for high-reliability scenes such as vehicle-mounted display and high-end illumination, and can effectively intercept hidden lamp beads causing'caterpillar 'failure or early light attenuation, thereby remarkably improving the product yield and the terminal reliability.
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