Refining production process of high-purity electronic-grade ammonia gas
By employing a process flow of gasification, filtration, adsorption, ultrafiltration, distillation, and condensation liquefaction, and utilizing activated alumina and molecular sieve tandem adsorption and PVSQ/SiO2/PVDF ultrafiltration membranes, the problems of insufficient purity, high cost, and low efficiency in removing trace impurities in existing ammonia refining processes have been solved, achieving high-purity and low-cost ammonia production.
Patent Information
- Application Number
- CN202610250982.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2026-03-03
- Publication Date
- 2026-05-26
AI Technical Summary
Existing ammonia refining processes are unable to simultaneously meet the requirements of high purity, low cost, and high efficiency, especially in removing trace impurities, and thus cannot meet the stringent standards of the semiconductor and optoelectronic industries.
The process involves gasification, filtration, adsorption, ultrafiltration, distillation, and condensation liquefaction. It utilizes activated alumina and molecular sieves in series for alternating adsorption, combined with ultrafiltration using a PVSQ/SiO2/PVDF ultrafiltration membrane, multi-stage separation in a distillation column, and finally achieves the production of high-purity ammonia through staged cooling.
The production of high-purity electronic-grade ammonia gas has been achieved, with a purity of over 5N. This has reduced production costs, improved the removal efficiency of trace impurities, and met the purity requirements of the high-end electronics industry.