An epitaxial material optimized growth method for edge emitting lasers

Abstract

This application provides an optimized epitaxial material growth method for edge-emitting lasers, comprising: obtaining a first substrate and pre-treating the surface of the first substrate; epitaxially growing a buffer layer structure on the first substrate, the buffer layer structure comprising at least two buffer layers with gradually changing lattice constants for lattice matching transition between the substrate and the target epitaxial layer; epitaxially growing a target epitaxial layer stack on the buffer layer structure; wherein, during the growth of the buffer layer structure and the target epitaxial layer stack, the growth state is monitored based on a real-time monitoring system, and the growth process parameters are dynamically adjusted according to the monitoring feedback. Through the synergistic effect of "structural design - real-time feedback - dynamic control", the crystal integrity, interface sharpness and compositional uniformity of the epitaxial material are fundamentally improved, thereby providing a core material basis for the fabrication of low-threshold, high-efficiency and high-reliability edge-emitting lasers.

Description

Technical Field

[0001] This application relates to the field of semiconductor manufacturing technology, and in particular to an optimized growth method for epitaxial materials used in edge-emitting lasers. Background Technology

[0002] Edge-emitting lasers (EELs), as core light sources, have wide applications in optical communication, materials processing, sensing, and display. Their performance and efficiency fundamentally depend on the quality of the epitaxial materials used in the active region and waveguide structure. Currently, the epitaxial layers of such lasers are typically grown on heterogeneous substrates using techniques such as metal-organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE). In this process, precisely controlling the chemical composition, crystal structure, and micro-defect density of the epitaxial material is crucial for obtaining high-performance devices. Related technologies involve optimizing process parameters such as growth temperature, pressure, and precursor flow rate, as well as employing strategies such as buffer layer design and interface engineering to mitigate stress and dislocation defects caused by lattice constant mismatch between the substrate and the epitaxial layer, thereby striving to achieve high-quality single-crystal epitaxial growth.

[0003] A series of challenges and limitations remain in achieving ideal epitaxial structures suitable for high-performance edge-emitting lasers. First, lattice mismatch remains the fundamental factor limiting the crystal quality of epitaxial layers; simple single-layer buffer structures often fail to completely suppress the extension of defects into the active region. Second, traditional growth process control is mostly static or empirical, lacking the ability to provide real-time, precise feedback and dynamic control of material composition and strain states during growth, resulting in poor uniformity and repeatability of the epitaxial layer. Furthermore, existing techniques typically focus on isolated aspects such as composition control, structural design, or substrate treatment, lacking a comprehensive solution that systematically and collaboratively integrates material design, real-time process monitoring, and advanced structural engineering. Summary of the Invention

[0004] In view of this, embodiments of this application provide an optimized epitaxial material growth method for edge-emitting lasers. One or more embodiments of this application also relate to an optimized epitaxial material growth apparatus for edge-emitting lasers, a computing device, a computer-readable storage medium, and a computer program, to address the technical deficiencies existing in the prior art.

[0005] In a first aspect, embodiments of this application provide an optimized growth method for epitaxial materials used in edge-emitting lasers, comprising:

[0006] Obtain a first substrate and pre-treat the surface of the first substrate; A buffer layer structure is epitaxially grown on the first substrate, the buffer layer structure comprising at least two buffer layers with gradually changing lattice constants for lattice matching transition between the substrate and the target epitaxial layer; The target epitaxial layer stack is epitaxially grown on the buffer layer structure; During the growth of the buffer layer structure and the target epitaxial layer stack, the growth status is monitored by a real-time monitoring system, and the growth process parameters are dynamically adjusted based on the monitoring feedback.

[0007] In one possible implementation, the real-time monitoring system includes at least one of an online spectral monitoring system, an X-ray diffractometer, or a Raman spectrometer.

[0008] In one possible implementation, a multilayer structure formed by alternating at least two different materials is introduced during the growth of the target epitaxial layer stack.

[0009] In one possible implementation, the method further includes a selective growth step: forming a mask in a specific region on the first substrate, and then growing the buffer layer structure and the target epitaxial layer stack in the region not covered by the mask.

[0010] In one possible implementation, after the growth of the target epitaxial layer stack is completed, the method further includes: annealing the grown epitaxial structure, wherein the epitaxial structure includes the buffer layer structure and the target epitaxial layer stack.

[0011] In one possible implementation, pretreatment of the first substrate surface includes at least one of chemical cleaning, polishing, and etching.

[0012] In one possible implementation, the material of at least one buffer layer in the buffer layer structure is at least one of AlN, AlGaN, and GaN.

[0013] In one possible implementation, the growth process parameters include at least one of precursor gas flow rate, growth temperature, or reaction chamber pressure.

[0014] In one possible implementation, the buffer layer structure is a multilayer buffer structure based on AlN, AlGaN, and GaN.

[0015] In one possible implementation, during the growth of the target epitaxial layer stack, a compensating strain opposite in direction to the strain induced by the substrate is introduced into the at least one epitaxial layer by controlling the thickness and doping concentration of at least one epitaxial layer in the target epitaxial layer stack.

[0016] Secondly, embodiments of this application provide an epitaxial material optimization growth apparatus for an edge-emitting laser, comprising: A substrate processing module for supporting and pre-processing the first substrate; An epitaxial growth module, connected to the substrate processing module, is used to sequentially epitaxially grow a buffer layer structure and a target epitaxial layer stack on the first substrate; the buffer layer structure includes at least two buffer layers with gradually changing lattice constants for lattice matching transition between the substrate and the target epitaxial layer; A real-time monitoring system is installed in the epitaxial growth module to monitor the growth status during the growth of the buffer layer structure and the target epitaxial layer stack. The process control module is communicatively connected to both the real-time monitoring system and the epitaxial growth module. It receives monitoring feedback from the real-time monitoring system and dynamically adjusts the growth process parameters of the epitaxial growth module based on the monitoring feedback.

[0017] Thirdly, embodiments of this application provide a computing device, including: Memory and processor; The memory is used to store computer-executable instructions, and the processor is used to execute the computer-executable instructions. When the computer-executable instructions are executed by the processor, they implement the steps of the above-described method for optimizing the growth of epitaxial materials for a side-emitting laser.

[0018] Fourthly, embodiments of this application provide a computer-readable storage medium storing computer-executable instructions that, when executed by a processor, implement the steps of the above-described method for optimizing the growth of epitaxial materials for a side-emitting laser.

[0019] Fifthly, embodiments of this application provide a computer program, wherein when the computer program is executed in a computer, the computer is instructed to perform the steps of the above-described method for optimizing the growth of epitaxial materials for a side-emitting laser.

[0020] The technical solution provided in this application involves first pre-treating the substrate surface, such as cleaning and polishing, to provide a clean and flat growth interface. Then, at least two buffer layers with gradually changing lattice constants are sequentially epitaxially grown on the substrate. Through precise design of material composition and thickness, a gradual transition of the lattice constant from the substrate to the target epitaxial layer is achieved, effectively releasing strain and suppressing defect propagation. Next, a multi-layered target epitaxial layer containing an active region is epitaxially grown on the optimized buffer layer. Using this method, a real-time monitoring system is used to acquire signals of crystal quality, composition, and strain state of the growth surface online. Based on this, key process parameters such as growth temperature and gas flow rate are dynamically and in a closed-loop manner, achieving proactive and precise control of material growth kinetics. Through the synergistic effect of "structural design-real-time feedback-dynamic control," the crystal integrity, interface sharpness, and compositional uniformity of the epitaxial material are fundamentally improved, thus providing a core material basis for the fabrication of low-threshold, high-efficiency, and high-reliability edge-emitting lasers. Attached Figure Description

[0021] Figure 1 This is a schematic flowchart of an optimized epitaxial material growth method for an edge-emitting laser provided in one embodiment of this application; Figure 2 This is a schematic diagram of the structure of an epitaxial material optimization growth apparatus for an edge-emitting laser, provided in one embodiment of this application; Figure 3 This is a structural block diagram of a computing device provided in one embodiment of this application. Detailed Implementation

[0022] Many specific details are set forth in the following description to provide a full understanding of this application. However, this application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar extensions without departing from the spirit of this application; therefore, this application is not limited to the specific embodiments disclosed below.

[0023] The terminology used in one or more embodiments of this application is for the purpose of describing particular embodiments only and is not intended to limit the scope of one or more embodiments of this application. The singular forms “a” and “the” as used in one or more embodiments of this application and the appended claims are also intended to include the plural forms unless the context clearly indicates otherwise. It should also be understood that the term “and / or” as used in one or more embodiments of this application refers to and includes any or all possible combinations of one or more associated listed items.

[0024] It should be understood that although the terms first, second, etc., may be used to describe various information in one or more embodiments of this application, such information should not be limited to these terms. These terms are only used to distinguish information of the same type from one another. For example, first may also be referred to as second without departing from the scope of one or more embodiments of this application, and similarly, second may also be referred to as first. Depending on the context, the word "if" as used herein may be interpreted as "when," "when," or "in response to a determination."

[0025] This application provides an optimized growth apparatus for epitaxial materials used in edge-emitting lasers, a computing device, and a computer-readable storage medium, which will be described in detail in the following embodiments.

[0026] Figure 1 This is a schematic flowchart illustrating an optimized epitaxial material growth method for an edge-emitting laser, provided as an embodiment of this application.

[0027] Step 101: Obtain the first substrate and pre-treat the surface of the first substrate.

[0028] In some embodiments, the pretreatment of the first substrate surface may include at least one of chemical cleaning, polishing, and etching.

[0029] In one embodiment, during the substrate pretreatment step, a first substrate with a specific crystal orientation is first obtained. For example, this first substrate can be a GaN homogeneous substrate. Subsequently, a systematic surface treatment is performed to prepare an ideal interface for epitaxial growth. The specific implementation process is as follows: First, chemical cleaning is performed, typically using acid and alkali solutions such as those in the RCA standard process to sequentially remove organic contaminants, metal ions, and the native oxide layer. Then, polishing is performed, for example, using a chemical mechanical polishing process, to eliminate surface scratches and achieve atomic-level flatness. If necessary, dry or wet etching is used to precisely remove surface damage layers or control the surface microstructure. This pretreatment fundamentally eliminates the initial defect sources for epitaxial growth, providing a clean, flat, chemically stable, and crystal-structure-complete starting surface. This not only improves the uniformity and consistency of initial nucleation of the epitaxial material and effectively suppresses dislocation extension induced by impurities or defects on the substrate surface, but also lays a crucial foundation for subsequent high-quality lattice-matched transitions and steep interface epitaxial growth.

[0030] Step 102: Epitaxially grow a buffer layer structure on the first substrate. The buffer layer structure includes at least two buffer layers with gradually changing lattice constants for lattice matching transition between the substrate and the target epitaxial layer.

[0031] In some embodiments, a first buffer layer (such as AlN or AlGaN with a high aluminum content) can be grown on a pretreated first substrate using MOCVD or MBE processes. Its lattice constant is intermediate between that of the substrate and the target material. Subsequent buffer layers are then grown layer by layer. By precisely controlling the material composition of each layer (e.g., a continuous or stepwise decrease in the Al content in AlGaN) and its thickness, the lattice constant is continuously and gradually changed along the growth direction, eventually smoothly transitioning to the lattice constant of the target epitaxial layer (such as GaN). This method can gradually dissipate the huge lattice mismatch stress concentrated at a single interface in a traditional single-layer buffer layer to multiple interfaces through progressive strain release, thereby significantly suppressing the extension of dislocations into the active region. This not only improves the crystal quality of the epitaxial material but also provides a crucial material foundation for achieving low threshold current and high output power laser emission.

[0032] In some embodiments, at least one buffer layer in the buffer layer structure is made of at least one of AlN, AlGaN, and GaN. Choosing AlN, AlGaN, and GaN as the core material system for the buffer layer achieves excellent synergistic effects. AlN, with its wide bandgap and large lattice constant, is particularly suitable as the initial nucleation layer for direct growth on a heterogeneous substrate. It not only effectively blocks the upward extension of substrate defects but also provides a stable crystal template for subsequent growth. The key advantage of AlGaN lies in the continuous tunability of its lattice constant and bandgap. By precisely controlling the aluminum composition, a transition layer with a smooth gradient of lattice constant can be constructed between AlN and GaN, achieving a gradual release of stress. GaN, as the terminal buffer layer closest to the active region, has a lattice constant that best matches the final target epitaxial layer, greatly alleviating interface stress. This material system, through compositional design and sequential growth, forms a complete and optimized stress management and defect filtering channel from the substrate to the active region. Its synergistic effect systematically reduces the penetration dislocation density, fundamentally providing a high-quality epitaxial foundation for the realization of high-performance lasers.

[0033] In some embodiments, the buffer layer structure is a multilayer buffer structure based on AlN, AlGaN, and GaN. The buffer layer structure is a multilayer buffer structure consisting of AlN layers, AlGaN layers, and GaN layers sequentially. Its implementation process is specifically manifested as a precise, functionally defined three-step heteroepitaxial method: First, an AlN layer is grown on the substrate as an initial nucleation layer, utilizing its good lattice compatibility with various substrates to achieve high-quality nucleation and effectively isolate substrate defects; then, an AlGaN transition layer is grown, and by programmatically linearly or stepwise reducing the aluminum composition, its lattice constant gradually changes from the AlN layer to near GaN; finally, a GaN terminal layer is grown, achieving near-perfect lattice matching with the target active layer. This combination method locks in the optimal arrangement and functional division of the three materials. Through this collaborative architecture of "rigid blocking - flexible gradient - perfect docking," an optimized path for gradual stress release is constructed, which can minimize the mismatch dislocation density at the heterointerface, thereby obtaining extremely high crystal quality in the subsequent active region. This is the decisive material basis for realizing low-threshold, high-reliability side-emitting lasers.

[0034] Step 103: Epitaxially grow the target epitaxial layer stack on the buffer layer structure.

[0035] In some embodiments, during the growth of the buffer layer structure and the target epitaxial layer stack, the growth status is monitored by a real-time monitoring system, and the growth process parameters are dynamically adjusted based on the monitoring feedback.

[0036] After the buffer layer structure is grown, the target epitaxial layer stack, which constitutes the core functional area of ​​the laser, is epitaxially grown on an optimized crystal template. For example, this epitaxial layer may include a confinement layer, an active region, and a waveguide layer. This process can be continuously and in-situ acquired by a real-time monitoring system integrated in the growth chamber, which reflects key signals reflecting the material surface morphology, crystal quality, composition, and strain state. The process control system compares the real-time signals with the preset ideal growth model and automatically and continuously fine-tunes key growth parameters (such as source gas flow rate and temperature) based on algorithms, thereby achieving dynamic and precise control of epitaxial growth dynamics. By compensating for fluctuations in the growth environment in real time, it ensures that all epitaxial layers, from the buffer layer to the complex quantum structure, can be grown according to the design with atomic-level precision. This achieves excellent crystal structure integrity, interface steepness, and compositional uniformity on the entire wafer, laying an irreplaceable process foundation for the ultimate consistency and high-yield manufacturing of laser performance.

[0037] In some embodiments, the growth process parameters include at least one of precursor gas flow rate, growth temperature, or reaction chamber pressure. By establishing the ability to dynamically control core process parameters such as precursor gas flow rate, growth temperature, and reaction chamber pressure, atomic-level precise control of the growth kinetics of epitaxial materials is achieved. Precise adjustment of the precursor gas flow rate (such as TMGa, TMAI, NH3, etc.) can directly control the elemental composition and doping concentration in the material, which is key to determining the band structure; precise control of the growth temperature affects the migration rate of surface atoms and the chemical reaction rate, and plays a decisive role in crystal quality, interface steepness, and defect formation; the regulation of the reaction chamber pressure can change the mean free path and reaction path of the gaseous reactants, thereby affecting the growth mode and uniformity of the material. By incorporating these three elements into a process system that can be dynamically adjusted based on real-time feedback, the growth process is upgraded from a static "recipe execution" to a dynamic "state optimization." This system can compensate for process drift caused by factors such as equipment fluctuations or precursor depletion in real time, thereby ensuring that epitaxial materials with highly uniform composition, consistent crystal structure, and extremely low defect density are obtained on the entire wafer. This is the fundamental process guarantee for achieving mass production of high-performance, high-yield lasers.

[0038] In some embodiments, the real-time monitoring system includes at least one of an online spectral monitoring system, an X-ray diffractometer, or a Raman spectrometer. The online spectral monitoring system (such as an ellipsomerometer or a reflectance differential spectrometer) analyzes changes in the reflectance spectrum of the growth surface to acquire key information such as the thickness, growth rate, and roughness of the epitaxial layer in real time and non-contactly, achieving sub-nanometer-level film thickness control. X-ray diffractometers (especially high-resolution XRD) can accurately determine the lattice constant, strain state, and crystal quality of the epitaxial material, which is crucial for monitoring the gradient process of the buffer layer and the integrity of the quantum well structure. Raman spectrometers, by detecting characteristic Raman scattering peaks of the material, can sensitively reflect the crystal structure, internal stress, and material composition. Integrating at least one of these three advanced characterization techniques into the growth equipment allows for in-situ, real-time, and complementary quantitative characterization of the kinetic process of epitaxial growth and the structural properties of the material from different physical principles. This provides indispensable and accurate data input for the dynamic optimization and closed-loop control of subsequent process parameters, ensuring that the structural parameters of the epitaxial material are strictly controlled within the design window while growing at high speed.

[0039] In some embodiments, a multilayer structure formed by alternating layers of at least two different materials is introduced during the growth of the target epitaxial layer stack. Performance breakthroughs are achieved by constructing a precise periodic heterostructure in the core functional region of the laser. Specifically, during the growth of the target epitaxial layer stack, MOCVD or MBE equipment is used to alternately deposit thin layers of two (or more) different semiconductor materials with different compositions or band gaps by programmatically switching precursor sources. For example: In the active region of a GaN-based edge-emitting laser, InGaN quantum well layers and GaN quantum barrier layers are alternately grown sequentially. By precisely controlling the indium flux and time in the InGaN layer, as well as the thickness of each layer (e.g., a few nanometers to tens of nanometers), this cycle is repeated to form a multi-quantum well structure containing multiple periods (e.g., 5-15 periods). The core benefit of this alternating multilayer structure is that it artificially creates a periodic potential energy distribution. The narrow-bandgap InGaN well layer acts as a confining potential well for electrons and holes, while the wide-bandgap GaN barrier layer serves as a barrier. This significantly enhances the spatial localization of charge carriers and the probability of radiative recombination, thereby substantially improving luminous efficiency. Simultaneously, this periodic structure can effectively modulate the optical field distribution and optimize the optical confinement factor. This reduces the laser's threshold current density, improves differential quantum efficiency, and increases output power.

[0040] In some embodiments, a mask can be formed in a specific region on the first substrate, followed by the growth of a buffer layer structure and a target epitaxial layer stack in the region not covered by the mask. High-quality regional growth and morphology control of the laser structure can be achieved through selective epitaxy. Specifically, the process can be as follows: first, a mask material (such as silicon dioxide or silicon nitride) is deposited and patterned in a specific region of the first substrate to form a mask layer with a preset pattern; then, the substrate with the mask is placed in the epitaxial reaction chamber, and epitaxial growth is performed in the exposed region of the substrate not covered by the mask. For example, in the growth of GaN-based materials for edge-emitting lasers, a series of parallel strip-shaped masks are prepared on the substrate, followed by the sequential growth of an AlN buffer layer, an AlGaN / GaN superlattice, and an active layer stack containing InGaN / GaN multiple quantum wells in the strip-shaped opening regions, thereby directly forming the ridge waveguide structure required for the laser during the growth process. In this way, on the one hand, the formed mask can effectively suppress nucleation in non-growth areas, forcing the material to grow longitudinally only at the opening. This not only significantly reduces the defect density, but also further improves the crystal quality through lateral crystal plane fusion. On the other hand, it can form complex device ridge or mesa structures in one step, avoiding surface damage and contamination caused by subsequent dry etching, thus simultaneously improving material quality and simplifying device processes.

[0041] In some embodiments, after the growth of the target epitaxial layer stack is completed, the grown epitaxial structure is further annealed, wherein the epitaxial structure includes a buffer layer structure and the target epitaxial layer stack. Specifically, after the overall epitaxial structure including the buffer layer structure and the target epitaxial layer stack is grown, it is held for a period of time in an inert (such as nitrogen) or nitrogen-containing atmosphere at a specific high temperature (e.g., for GaN-based materials, typically in the range of 700°C to 900°C). For example, a complete epitaxial wafer with an AlN / AlGaN buffer layer and an InGaN / GaN multi-quantum-well active region grown thereon is annealed in a nitrogen environment at 850°C for 10 to 30 minutes. The above methods enable atoms inside the material to acquire sufficient kinetic energy for short-range diffusion under controlled high-temperature conditions. This can effectively repair microscopic defects, promote the redistribution or activation of impurity atoms, and make the atomic arrangement at the heterostructure interface more orderly. This systematically reduces the overall nonradiative recombination center density of the epitaxial material and improves its electrical and optical properties, ultimately enhancing the luminous efficiency and long-term operational reliability of the prepared laser.

[0042] In some embodiments, during the growth of the target epitaxial layer stack, a compensating strain opposite to the strain direction induced by the substrate is introduced into at least one epitaxial layer by controlling the thickness and doping concentration of at least one epitaxial layer in the target epitaxial layer stack. Specifically, during the growth of the target epitaxial layer stack, the thickness and doping concentration of a particular functional layer (such as a waveguide layer or confinement layer) are selectively and synergistically designed. For example, in a GaN-based laser epitaxial structure grown on a sapphire substrate, due to the lattice mismatch between the substrate and GaN, the entire epitaxial layer typically experiences tensile strain. In this case, an AlGaN layer of a specific thickness can be grown on top of the GaN waveguide layer using MOCVD, and by precisely controlling the flow rate of the Al component and the flow rate of the SiH4 dopant gas, specific lattice constant and carrier concentration requirements are simultaneously met, thereby artificially introducing a compressive strain into the AlGaN layer. The reverse strain introduced by this strain compensation design can effectively offset or partially neutralize the intrinsic strain transmitted from the substrate, reduce the overall strain energy of the epitaxial material, and prevent material cracking or massive proliferation of defects caused by strain accumulation. Thus, while improving crystal quality and structural integrity, it also creates a more flexible engineering design space for optimizing the band structure and light field distribution of the laser.

[0043] The following is a detailed description of the epitaxial material optimization growth method for edge-emitting lasers provided in this application, through a complete implementation example: Example 1 A 2-inch c-plane sapphire substrate is provided as the first substrate.

[0044] The process begins with chemical cleaning using an RCA standard solution to remove organic and metallic contaminants; followed by chemical mechanical polishing to obtain an atomically smooth surface; and finally, wet etching is used to slightly roughen the surface to promote nucleation.

[0045] The processed substrate was placed in the MOCVD reaction chamber. A real-time monitoring system, including a reflectance spectrometer and a high-resolution X-ray diffractometer, was activated. An AlN nucleation layer approximately 20 nm thick was grown at high temperature. The spectrometer monitored the film thickness and growth rate in real time, while XRD monitored the crystal quality. Next, a three-layer buffer structure with a gradient lattice constant was grown: first a 100 nm Al0.3Ga0.7N transition layer, then a 200 nm Al0.1Ga0.9N layer, and finally a 500 nm GaN termination layer. Throughout the process, the flow rate ratio of the TMAl and TMGa precursors was dynamically adjusted based on real-time XRD data feedback to ensure precise control of the aluminum composition in each layer and a smooth gradient of the lattice constant, ultimately reducing the through-dislocation density to 5 × 102. 7 cm - ² Below.

[0046] A 2 μm thick Si-doped n-GaN layer was grown on the optimized buffer layer. The growth temperature and SiH4 flow rate were dynamically controlled in real time using a spectrometer to ensure thickness and doping uniformity. An 80 nm thick unintentionally doped AlO layer was then grown. 06 Ga0. 94 An N-layer is formed. By precisely controlling its thickness and Al composition, a slight compressive strain is introduced into this layer to partially compensate for the intrinsic tensile strain transmitted from the sapphire substrate to the entire epitaxial structure. An InO layer consisting of 5 cycles is then grown. 15 Ga0. 85 A multi-quantum-well (N) (3 nm) / GaN (10 nm) structure was constructed. The thickness of the well layer and the indium composition of each quantum well were monitored in real-time and in situ using a spectrometer. Based on feedback, the TMIn flow rate and growth time were dynamically adjusted layer by layer, achieving a well layer thickness fluctuation of less than ±0.2 nm and an indium composition deviation of less than ±1%. A 20 nm Al0.2Ga0.8N electron-blocking layer and a 0.5 μm thick Mg-doped p-GaN layer were sequentially grown to complete the laser stack.

[0047] The entire epitaxial wafer (including all buffer layers and laser stacks) was annealed for 20 minutes at 850°C under a nitrogen atmosphere to activate Mg acceptors and further repair crystal defects.

[0048] This embodiment systematically integrates six key technologies: substrate pretreatment, multilayer gradient buffer layer design, dynamic process closed-loop control based on real-time monitoring (spectroscopy + XRD), precision growth of alternating multilayer structures in the core active region, strain compensation engineering, and post-growth annealing. Epitaxial wafers grown using this method exhibit high crystal quality, steep interfaces, and excellent quantum well uniformity. The fabricated laser devices demonstrate low threshold current (~3 kA / cm²), high slope efficiency, and good reliability, fully validating the effectiveness of this integrated technical solution in addressing the core challenges of high-quality epitaxial growth.

[0049] Corresponding to the above method embodiments, this application also provides an embodiment of an epitaxial material optimization growth apparatus for a side-emitting laser. Figure 2 This illustration shows a schematic diagram of an epitaxial material optimization growth apparatus for a side-emitting laser, according to an embodiment of this application. Figure 2 As shown, the device includes: Substrate processing module 201 is used to carry and preprocess the first substrate; Epitaxial growth module 202, connected to the substrate processing module, is used to sequentially epitaxially grow a buffer layer structure and a target epitaxial layer stack on the first substrate; the buffer layer structure includes at least two buffer layers with gradually changing lattice constants for lattice matching transition between the substrate and the target epitaxial layer; A real-time monitoring system 203 is installed in the epitaxial growth module to monitor the growth status during the growth of the buffer layer structure and the target epitaxial layer stack. The process control module 204 is communicatively connected to both the real-time monitoring system and the epitaxial growth module. It is used to receive monitoring feedback from the real-time monitoring system and dynamically adjust the growth process parameters of the epitaxial growth module based on the monitoring feedback.

[0050] In one possible implementation, the real-time monitoring system includes at least one of an online spectral monitor, an X-ray diffractometer, or a Raman spectrometer.

[0051] In one possible implementation, the epitaxial growth module includes a metal-organic chemical vapor deposition (MOCVD) device or a molecular beam epitaxy (MBE) device.

[0052] In one possible implementation, the substrate processing module includes at least one of chemical cleaning, polishing, or etching for the surface of the first substrate.

[0053] In one possible implementation, the epitaxial growth module is configured to perform selective epitaxial growth and further includes a mask unit for forming a selective growth mask on the first substrate.

[0054] In one possible implementation, an annealing module is also included, connected to the epitaxial growth module, for annealing the grown overall epitaxial structure containing the buffer layer structure and the target epitaxial layer stack.

[0055] In one possible implementation, the growth process parameters dynamically controlled by the process control module include at least one of the following: precursor gas flow rate, growth temperature, or reaction chamber pressure.

[0056] In one possible implementation, the buffer layer structure is a multi-layer buffer structure consisting of an AlN layer, an AlGaN layer, and a GaN layer in sequence.

[0057] In one possible implementation, the epitaxial growth module is configured to introduce compensating strain in at least one epitaxial layer of the target epitaxial layer stack into the at least one epitaxial layer in a direction opposite to the strain induced by the substrate by controlling the growth parameters of the epitaxial layer.

[0058] In one possible implementation, the epitaxial growth module is further configured to form a multilayer structure composed of at least two different materials alternating during the growth of the target epitaxial layer stack.

[0059] The above is a schematic scheme of an epitaxial material optimization growth apparatus for an edge-emitting laser according to this embodiment. It should be noted that the technical solution of this epitaxial material optimization growth apparatus for an edge-emitting laser belongs to the same concept as the technical solution of the epitaxial material optimization growth method for an edge-emitting laser described above. Details not described in detail in the technical solution of the epitaxial material optimization growth apparatus for an edge-emitting laser can be found in the description of the technical solution of the epitaxial material optimization growth method for an edge-emitting laser described above.

[0060] Figure 3 A structural block diagram of a computing device 300 according to an embodiment of this application is shown. The components of the computing device 300 include, but are not limited to, a memory 310 and a processor 320. The processor 320 is connected to the memory 310 via a bus 330, and a database 350 is used to store data.

[0061] The computing device 300 also includes an access device 340, which enables the computing device 300 to communicate via one or more networks 360. Examples of these networks include Public Switched Telephone Network (PSTN), Local Area Network (LAN), Wide Area Network (WAN), Personal Area Network (PAN), or combinations of communication networks such as the Internet. The access device 340 may include one or more of any type of wired or wireless network interface (e.g., a network interface card (NIC)), such as an IEEE 802.11 Wireless Local Area Network (WLAN) wireless interface, a Wi-MAX (Worldwide Interoperability for Microwave Access) interface, an Ethernet interface, a Universal Serial Bus (USB) interface, a cellular network interface, a Bluetooth interface, or a Near Field Communication (NFC) interface.

[0062] In one embodiment of this application, the aforementioned components of the computing device 300 and Figure 3 Other components, not shown, can also be connected to each other, for example, via a bus. It should be understood that... Figure 3 The block diagram of the computing device shown is for illustrative purposes only and is not intended to limit the scope of this application. Those skilled in the art can add or replace other components as needed.

[0063] The computing device 300 can be any type of stationary or mobile computing device, including mobile computers or mobile computing devices (e.g., tablet computers, personal digital assistants, laptop computers, notebook computers, netbooks, etc.), mobile phones (e.g., smartphones), wearable computing devices (e.g., smartwatches, smart glasses, etc.) or other types of mobile devices, or stationary computing devices such as desktop computers or personal computers (PCs). The computing device 300 can also be a mobile or stationary server.

[0064] The processor 320 executes computer-executable instructions, which, when executed by the processor, implement the steps of the aforementioned method for optimizing the growth of epitaxial materials for an edge-emitting laser. The above is a schematic representation of a computing device according to this embodiment. It should be noted that the technical solution of this computing device and the aforementioned method for optimizing the growth of epitaxial materials for an edge-emitting laser belong to the same concept. Details not described in detail in the technical solution of the computing device can be found in the description of the aforementioned method for optimizing the growth of epitaxial materials for an edge-emitting laser.

[0065] An embodiment of this application also provides a computer-readable storage medium storing computer-executable instructions that, when executed by a processor, implement the steps of the above-described method for optimizing the growth of epitaxial materials for a side-emitting laser.

[0066] The above is an illustrative scheme of a computer-readable storage medium according to this embodiment. It should be noted that the technical solution of this storage medium belongs to the same concept as the technical solution of the above-described method for optimizing the growth of epitaxial materials for edge-emitting lasers. For details not described in detail in the technical solution of the storage medium, please refer to the description of the technical solution of the above-described method for optimizing the growth of epitaxial materials for edge-emitting lasers.

[0067] An embodiment of this application also provides a computer program, wherein when the computer program is executed in a computer, the computer is instructed to perform the steps of the above-described method for optimizing the growth of epitaxial materials for a side-emitting laser.

[0068] The above is an illustrative scheme of a computer program according to this embodiment. It should be noted that the technical solution of this computer program belongs to the same concept as the technical solution of the above-described method for optimizing the growth of epitaxial materials for edge-emitting lasers. For details not described in detail in the technical solution of the computer program, please refer to the description of the technical solution of the above-described method for optimizing the growth of epitaxial materials for edge-emitting lasers.

[0069] The foregoing has described specific embodiments of this application. Other embodiments are within the scope of the appended claims. In some cases, the actions or steps recited in the claims may be performed in a different order than that shown in the embodiments and may still achieve the desired results. Furthermore, the processes depicted in the drawings do not necessarily require the specific or sequential order shown to achieve the desired results. In some embodiments, multitasking and parallel processing are also possible or may be advantageous.

[0070] The computer instructions include computer program code, which may be in the form of source code, object code, executable file, or certain intermediate forms. The computer-readable medium may include any entity or device capable of carrying the computer program code, recording media, USB flash drives, portable hard drives, magnetic disks, optical disks, computer memory, read-only memory (ROM), random access memory (RAM), electrical carrier signals, telecommunication signals, and software distribution media, etc. It should be noted that the content included in the computer-readable medium may be appropriately added to or subtracted according to the requirements of legislation and patent practice in the jurisdiction. For example, in some jurisdictions, according to legislation and patent practice, computer-readable media may not include electrical carrier signals and telecommunication signals.

[0071] It should be noted that, for the sake of simplicity, the foregoing method embodiments are all described as a series of actions. However, those skilled in the art should understand that the embodiments of this application are not limited to the described order of actions, because according to the embodiments of this application, some steps can be performed in other orders or simultaneously. Secondly, those skilled in the art should also understand that the embodiments described in the specification are all preferred embodiments, and the actions and modules involved are not necessarily essential to the embodiments of this application.

[0072] In the above embodiments, the descriptions of each embodiment have different focuses. For parts not described in detail in a certain embodiment, please refer to the relevant descriptions of other embodiments.

[0073] The preferred embodiments disclosed above are merely illustrative of this application. The optional embodiments do not exhaustively describe all details, nor do they limit the invention to the specific implementations described. Clearly, many modifications and variations can be made based on the embodiments of this application. These embodiments are selected and specifically described in this application to better explain the principles and practical applications of the embodiments of this application, thereby enabling those skilled in the art to better understand and utilize this application. This application is limited only by the claims and their full scope and equivalents.

Claims

1. An optimized growth method for epitaxial materials used in edge-emitting lasers, characterized in that, include: Obtain a first substrate and pre-treat the surface of the first substrate; A buffer layer structure is epitaxially grown on the first substrate, the buffer layer structure comprising at least two buffer layers with gradually changing lattice constants for lattice matching transition between the substrate and the target epitaxial layer; The target epitaxial layer stack is epitaxially grown on the buffer layer structure; During the growth of the buffer layer structure and the target epitaxial layer stack, the growth status is monitored by a real-time monitoring system, and the growth process parameters are dynamically adjusted based on the monitoring feedback.

2. The method according to claim 1, characterized in that, The real-time monitoring system includes at least one of an online spectral monitoring system, an X-ray diffractometer, or a Raman spectrometer.

3. The method according to claim 1, characterized in that, During the growth of the target epitaxial layer stack, a multilayer structure formed by alternating at least two different materials is introduced.

4. The method according to claim 1, characterized in that, The method further includes: forming a mask in a specific region on the first substrate, and then growing the buffer layer structure and the target epitaxial layer stack in the region not covered by the mask.

5. The method according to claim 1, characterized in that, After completing the growth of the target epitaxial layer stack, the method further includes: The grown epitaxial structure is annealed, wherein the epitaxial structure includes the buffer layer structure and the target epitaxial layer stack.

6. The method according to claim 1, characterized in that, Pretreatment of the first substrate surface includes at least one of chemical cleaning, polishing, and etching.

7. The method according to claim 1, characterized in that, The material of at least one buffer layer in the buffer layer structure is at least one of AlN, AlGaN, and GaN.

8. The method according to claim 1, characterized in that, The growth process parameters include at least one of the following: precursor gas flow rate, growth temperature, or reaction chamber pressure.

9. The method according to claim 1, characterized in that, The buffer layer structure is a multilayer buffer structure based on AlN, AlGaN and GaN.

10. The method according to claim 1, characterized in that, During the growth of the target epitaxial layer stack, by controlling the thickness and doping concentration of at least one epitaxial layer in the target epitaxial layer stack, a compensating strain opposite in direction to the strain caused by the substrate is introduced into the at least one epitaxial layer.

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