Semiconductor manufacturing apparatus and method for manufacturing semiconductor apparatus

Abstract

The object of this invention is to provide a technique for reducing inductance during testing. The semiconductor manufacturing apparatus of this invention includes: a platform on which a semiconductor device is mounted; a support stage disposed above the platform and including a first substrate; and an inspection fixture disposed between the platform and the support stage. An upper surface conductive pattern is provided on the upper surface of the first substrate, electrically connected to a lower surface portion that is part of the lower surface of the first substrate. A lower surface conductive pattern is provided on the lower surface of the first substrate, excluding the lower surface portion, along the upper surface conductive pattern.

Description

Technical Field

[0001] This disclosure relates to a semiconductor manufacturing apparatus and a method for manufacturing a semiconductor apparatus. Background Technology

[0002] In recent years, various technologies have been proposed for semiconductor manufacturing apparatuses used to measure the electrical characteristics of semiconductor devices such as semiconductor chips. For example, Patent Document 1 proposes the use of a spring needle when measuring the electrical characteristics of a semiconductor device.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2011-123015 Summary of the Invention

[0006] The technical problem that the invention aims to solve

[0007] However, in the prior art, the conductive patterns used to allow current to flow through the semiconductor device's destination and return paths are disposed on the same surface of the same substrate. In such a structure, due to the conductive patterns of the destination and return paths disposed on the substrate, the loop area of ​​the current used for electrical characteristic measurement becomes larger, thus resulting in a problem of increased inductance.

[0008] Therefore, this disclosure was made in view of the above-mentioned problems, and its object is to provide a technique for reducing the current of an inductor during testing.

[0009] Technical means for solving technical problems

[0010] The semiconductor manufacturing apparatus disclosed herein includes: a platform on which a semiconductor device is placed; a support stage disposed above the platform and including a first substrate; and an inspection fixture disposed between the platform and the support stage. An upper surface conductive pattern is provided on the upper surface of the first substrate, electrically connected to a lower surface portion which is part of the lower surface of the first substrate. The lower surface conductive pattern is disposed along the upper surface conductive pattern on the lower surface of the first substrate, excluding the lower surface portion. The inspection fixture includes: a current-carrying pin electrically connected to the semiconductor device; a second substrate disposed above the current-carrying pin and including a lower portion electrically connected to the current-carrying pin and an upper portion electrically connected to the lower portion; and an insulating plate member covering the upper portion of the current-carrying pin on the lower side of the second substrate. The semiconductor manufacturing apparatus further includes: a tester electrically connected to the lower portion of the second substrate; and a support platform or inspection fixture comprising a spring pin block having a spring pin electrically connected to either the lower surface conductive pattern of the first substrate or the upper portion of the second substrate, and capable of contacting and separating from the other spring pin; the support platform or inspection fixture comprising a conductive member configured along the energized pin and capable of electrically connecting the platform to the lower surface portion of the first substrate; and a transport unit that electrically connects the energized pin to the lower surface conductive pattern via the second substrate and the spring pin block by transporting the inspection fixture toward the support platform.

[0011] Invention Effects

[0012] According to this disclosure, an upper surface conductive pattern electrically connected to a lower surface portion is provided on the upper surface of the first substrate, and a lower surface conductive pattern is provided on the lower surface of the first substrate, excluding the lower surface portion, along the upper surface conductive pattern. With this structure, the inductance of the current during testing can be reduced. Attached Figure Description

[0013] Figure 1 This is a side cross-sectional view showing the structure of the semiconductor manufacturing apparatus according to Embodiment 1.

[0014] Figure 2 This is a front sectional view showing the structure of the semiconductor manufacturing apparatus according to Embodiment 1.

[0015] Figure 3 This is a side cross-sectional view showing the state of the semiconductor manufacturing apparatus according to Embodiment 1 during electrical characteristic measurement.

[0016] Figure 4This is a side view showing the structure of the spring pin block according to Embodiment 1.

[0017] Figure 5 This is a cross-sectional view showing the structure of the spring pin block according to Embodiment 1.

[0018] Figure 6 This is a cross-sectional view showing the structure of the spring pin block according to Embodiment 1.

[0019] Figure 7 (a) and Figure 7 (b) is a front view and a side view showing the two-end probe structure involved in Embodiment 1.

[0020] Figure 8 This is a top view showing the structure of the semiconductor manufacturing apparatus according to Embodiment 1.

[0021] Figure 9 This is a side cross-sectional view showing the structure of the semiconductor manufacturing apparatus according to Embodiment 2.

[0022] Figure 10 This is a front sectional view showing the structure of the semiconductor manufacturing apparatus according to Embodiment 2.

[0023] Figure 11 This is a side cross-sectional view showing the state of the semiconductor manufacturing apparatus according to Embodiment 2 during electrical characteristic measurement.

[0024] Figure 12 This is a top view showing the structure of the inspection fixture according to Embodiment 2.

[0025] Figure 13 This is a top view showing the structure of the inspection fixture according to Embodiment 3.

[0026] Figure 14 This is a cross-sectional view showing the structure of the inspection fixture involved in Embodiment 3.

[0027] Figure 15 This is a side cross-sectional view showing the structure of the semiconductor manufacturing apparatus according to Embodiment 4.

[0028] Figure 16 This is a front sectional view showing the structure of the semiconductor manufacturing apparatus according to Embodiment 4.

[0029] Figure 17 This is a side cross-sectional view showing the state of the semiconductor manufacturing apparatus according to Embodiment 4 during electrical characteristic measurement.

[0030] Figure 18 This is a top view showing the structure of the inspection fixture according to Embodiment 4.

[0031] Figure 19 This is a side cross-sectional view showing the structure of the semiconductor manufacturing apparatus according to Embodiment 5.

[0032] Figure 20 This is a front sectional view showing the structure of the semiconductor manufacturing apparatus according to Embodiment 5.

[0033] Figure 21 This is a side cross-sectional view showing the state of the semiconductor manufacturing apparatus according to Embodiment 5 during electrical characteristic measurement.

[0034] Figure 22 This is a top view showing the structure of the semiconductor manufacturing apparatus according to Embodiment 5.

[0035] Figure 23 This is a side cross-sectional view showing the structure of the semiconductor manufacturing apparatus according to Embodiment 6.

[0036] Figure 24 This is a front sectional view showing the structure of the semiconductor manufacturing apparatus according to Embodiment 6.

[0037] Figure 25 This is a side cross-sectional view showing the state of the semiconductor manufacturing apparatus according to Embodiment 6 during electrical characteristic measurement.

[0038] Figure 26 This is a top view showing the structure of the semiconductor manufacturing apparatus according to Embodiment 6.

[0039] Figure 27 This is a flowchart illustrating the manufacturing method of the semiconductor device according to Embodiment 7. Detailed Implementation

[0040] The embodiments will now be described with reference to the accompanying drawings. The features described in the following embodiments are illustrative, and not all features are essential. Furthermore, in the following descriptions, the same structural elements are labeled with the same or similar reference numerals in multiple embodiments, and the descriptions primarily focus on different structural elements. Additionally, in the following descriptions, specific positions and orientations such as "upper," "lower," "left," "right," "surface," or "back side" may not necessarily correspond to the actual positions and orientations in the implementation.

[0041] <Implementation Method 1>

[0042] Figure 1 and Figure 2 These are side sectional views and front sectional views showing the structure of the semiconductor manufacturing apparatus according to Embodiment 1. The semiconductor manufacturing apparatus according to Embodiment 1 is configured to measure the electrical characteristics of the semiconductor device 8.

[0043] Semiconductor device 8 is, for example, a semiconductor chip containing vertically oriented power semiconductor elements. Semiconductor substrate 8 can be made of conventional silicon (Si), or it can be made of wide-bandgap semiconductors such as silicon carbide (SiC), gallium nitride (GaN), gallium oxide (Ga2O3), and diamond. When semiconductor substrate 8 is made of wide-bandgap semiconductor, it can achieve stable operation at high temperatures and high voltages, as well as high-speed switching. Semiconductor device 8 includes, for example, MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors), IGBTs (Insulated Gate Bipolar Transistors), RC-IGBTs (Reverse-biased IGBTs), SBDs (Schottky Barrier Diodes), and PNDs (PN Junction Diodes).

[0044] Figure 1 The semiconductor manufacturing apparatus includes a tester 1, a transfer arm 9 as a transfer unit, a platform 10, a support stage 16, and a testing fixture 28 as its main structure. The semiconductor device 8 is mounted on the platform 10. The support stage 16 is positioned above the platform 10, and the testing fixture 28 can be positioned between the platform 10 and the support stage 16, for example, via the transfer arm 9.

[0045] Figure 3 This is a side cross-sectional view of the semiconductor manufacturing apparatus according to Embodiment 1, showing the state when measuring the electrical characteristics of the semiconductor device 8. Although details will be described later, the test fixture 28 is electrically connected to the support table 16 via the transfer arm 9, and the semiconductor device 8 is electrically connected to the test fixture 28, enabling the tester 1 to measure the electrical characteristics of the semiconductor device 8. Next, the constituent elements of the semiconductor manufacturing apparatus according to Embodiment 1 will be described in detail.

[0046] <Support Platform 16>

[0047] The support stage 16 is fixed to a main body (not shown) of the semiconductor manufacturing apparatus and is generally made of resin such as PEEK (polyether ether ketone). The support stage 16 includes a first substrate 2 parallel to the platform 10. A first through hole and a second through hole extending in the vertical direction are provided on the first substrate 2, and conductive components are respectively provided in the first through hole and the second through hole.

[0048] like Figure 1 As shown, an upper surface conductive pattern 24 is provided on the upper surface of the first substrate 2. The upper surface conductive pattern 24 is electrically connected to a portion of the lower surface of the first substrate 2, namely the lower surface portion 24a, through a conductive component of the first through-hole. A small signal pattern 25 is electrically connected to another portion of the lower surface of the first substrate 2, namely the lower surface portion 25a, through a conductive component of the second through-hole. The lower surface portion 24a is the first lower surface portion, and the lower surface portion 25a is the second lower surface portion. Furthermore, Figure 1In the middle, the left and right portions of the conductive pattern 24 on the upper surface are cut off by the small signal pattern 25, but in Figure 1 In the cross-sections other than those shown, the left and right portions are interconnected.

[0049] A lower surface conductive pattern 23 is provided on the lower surface of the first substrate 2, excluding the lower surface portions 24a and 25a. The lower surface conductive pattern 23 is disposed along the upper surface conductive pattern 24 and overlaps with the upper surface conductive pattern 24 when viewed from above. The lower surface conductive pattern 23, the upper surface conductive pattern 24, and the small signal pattern 25 described above are electrically connected to the test instrument 1 via wires.

[0050] Furthermore, in this embodiment 1, the small signal pattern 25 is electrically connected to the lower surface portion 25a of the first substrate 2 through a through-hole, just like the upper surface conductive pattern 24. However, it is not limited to this; it can also be provided on the lower surface of the first substrate 2 in the same way as the lower surface conductive pattern 23. In this case, the small signal pattern 25 is included in the concept of the lower surface conductive pattern 23.

[0051] <Inspection Fixture 28>

[0052] The inspection fixture 28 includes a second base plate 3, a spring pin block 4, a conductive member 5, an energizing pin 6, a first insulating plate member 13 as an insulating plate member, a support 14, and a second insulating plate member 18.

[0053] like Figure 3 As shown, the energized needle 6 can be electrically connected to the semiconductor device 8. For example, the energized needle 6 can be a conductive spring needle, wire probe, or measuring needle that can extend or retract through bending or elastic deformation, but is not limited to these. Surface treatments such as gold plating can also be applied to the energized needle 6.

[0054] The second substrate 3 is disposed on the upper side of the energized needle 6, and the lower part of the second substrate 3 is electrically connected to the energized needle 6.

[0055] The first insulating plate member 13 covers the upper part of the energized needle 6 on the lower side of the second substrate 3. The first insulating plate member 13 is configured such that although the energized needles 6 are insulated from each other, the energized needles 6 can be electrically connected to the lower part of the second substrate 3. For example, the first insulating plate member 13 can hold the upper part of the energized needle 6 in a state where the upper part of the energized needle 6 is directly connected to the lower part of the second substrate 3, or it can have a conductive member (not shown) that electrically connects the upper part of the energized needle 6 to the lower part of the second substrate 3.

[0056] A support post 14 supporting a second insulating plate member 18 is provided below the first insulating plate member 13, and the second insulating plate member 18 is penetrated by an energized needle 6. If the first insulating plate member 13 is provided with a spring needle that is the same as the spring needle of the spring needle block 4 described later, the inspection clamp 28 may not include the support post 14 and the second insulating plate member 18.

[0057] The second substrate 3 includes a lower portion electrically connected to the energized pin 6 and an upper portion electrically connected to the lower portion. In this embodiment 1, the second substrate 3 includes a lower conductive pattern as the lower portion of the second substrate 3, an upper conductive pattern as the upper portion of the second substrate 3, and a conductive member disposed in a through hole extending in the vertical direction on the second substrate 3. The conductive member electrically connects the lower conductive pattern and the upper conductive pattern. As described above, since the lower conductive pattern as the lower portion of the second substrate 3 is electrically connected to the energized pin 6, the upper conductive pattern of the second substrate 3 is electrically connected to the energized pin 6 via the lower conductive pattern. Furthermore, in this embodiment 1, the through hole of the second substrate 3 is disposed at a position opposite to the lower surface conductive pattern 23 and the lower portion 25a.

[0058] The spring pin block 4 has two end probes 26 that serve as spring pins. Multiple end probes 26 are electrically connected to the upper conductive pattern of the second substrate 3 and can contact and separate from the lower surface conductive pattern 23 of the first substrate 2. Figure 4 This is a side view showing the structure of spring pin block 4. Figure 5 It is along Figure 4 A cross-sectional view of line AA. Figure 6 It is along Figure 5 A cross-sectional view of the BB line.

[0059] like Figures 4-6 As shown, the spring needle block 4 has two end probes 26 serving as spring needles and a plate-shaped main body 30. The main body 30 in this embodiment 1 is as follows... Figure 4 and Figure 6 As shown, it includes two plate components. The main body 30 of the spring pin block 4 can be made of resin such as PEEK, or, when tested at high temperatures such as 200°C, it can be made of, for example, heat-resistant engineering plastics.

[0060] Figure 7 (a) and Figure 7 (b) is a front view and a side view of the structure of the two-end probe 26. The two-end probe 26 includes plate members 26a and 26b and a spring 26c. Figure 7 As shown in (a), the plate member 26a includes a first end having an R-shape on the upper side and a second end having a recess on the lower side, as... Figure 7As shown in (b), plate member 26b includes a first end having an R-shape on its lower side and a second end having a recess on its upper side. The second ends of plate members 26a and 26b intersect each other such that the second end of one of plate members 26a and 26b is located within the recess of the other. In this state, the second ends of plate members 26a and 26b are wound together by spring 26c.

[0061] like Figure 5 and Figure 6 As shown, the probes 26 at both ends are loosely fitted into the holes of the main body 30 of the spring needle block 4. Furthermore, since the plate members 26a and 26b intersect each other, in Figure 5 In the middle, the two probes 26 are roughly cross-shaped. This configuration allows both ends of the probes 26 to elastically expand and contract relative to the load. If there is no load, such as... Figure 4 and Figure 6 As shown, both ends will protrude to both sides of the main body 30 of the spring needle block 4. Figures 1-3 In the example, since the lower ends of the two probes 26 bear the load from the second substrate 3, only the upper ends of the two probes 26 protrude from the body 30 of the spring pin block 4.

[0062] As described above, a plurality of two-ended probes 26 are electrically connected to the upper conductive pattern of the second substrate 3, and the upper conductive pattern of the second substrate 3 is electrically connected to the energized pin 6. Therefore, the plurality of two-ended probes 26 are electrically connected to the energized pin 6.

[0063] Furthermore, in the above description, both ends of the two-end probe 26 are configured to elastically expand and contract relative to the load, but this is not a limitation. For example, the two-end probe 26 may also be configured such that only one end ( Figures 1-3 The upper part (middle section) can elastically expand and contract relative to the load. Additionally, in... Figure 7 (a) and Figure 7 In (b), the first ends of the plate members 26a and 26b have an R shape, but are not limited to this, they may also have a V shape, or multiple first ends may have an R shape and the remaining first ends may have a V shape.

[0064] Figure 1 The conductive member 5 extends vertically and can be configured along the energized pin 6. In this embodiment 1, the conductive member 5 is connected to and supported by the two-end probes 26 of the upper conductive pattern that is not electrically connected to the second substrate 3. As described later, the conductive member 5 can electrically connect the conductive elastic member 7 of the platform 10 (described later) to the lower surface portion 24a of the first substrate 2 via the two-end probes 26.

[0065] For example, the conductive component 5 may be a conductive leaf spring, spring needle, or wire probe that can expand or contract by bending or elastic deformation, but is not limited to these. The conductive component 5 may also be made of copper, and may undergo surface treatments such as gold plating.

[0066] The structure of the inspection fixture 28 has been described above, but it is not limited thereto. For example, the position of the energizing pin 6 can be changed according to the various positions of the electrode pads (not shown) provided on the upper side of various semiconductor devices 8, and the second substrate 3 can be replaced so that the conductive pattern of the second substrate 3 can be changed. According to this structure, even without changing the configuration pattern of the probes 26 at both ends, the electrical characteristics of various semiconductor devices 8 with different positions and shapes of electrode pads can be measured. As a result, it is expected that the cost of the inspection fixture 28 for measuring the electrical characteristics of various semiconductor devices 8 can be reduced.

[0067] <Transportation Arm 9>

[0068] Although not illustrated, the semiconductor manufacturing apparatus according to Embodiment 1 includes a plurality of inspection fixtures 28, and a transfer arm 9 supports one of the plurality of inspection fixtures 28 suitable for measuring the electrical characteristics of a semiconductor device 8. At this time, the inspection fixture 28 is positioned relative to the transfer arm 9 by means of the pins 12 of the transfer arm 9.

[0069] After the conveyor arm 9 supports an inspection fixture 28, it moves in the horizontal direction (e.g., the Y direction) to position the inspection fixture 28 between the platform 10 and the support table 16. Additionally, Figure 1 and Figure 2 In the diagram, for convenience, the inspection fixture 28 and the transfer arm 9 are shown separately, but in reality, the inspection fixture 28 is supported by the transfer arm 9.

[0070] Figure 8 This is a top view showing the positional relationship between the first base plate 2, the transfer arm 9 and the inspection fixture 28 when the inspection fixture 28 is arranged between the platform 10 and the support table 16 in this embodiment 1. Figure 8 The diagram illustrates the overlap between the lower surface conductive pattern 23 and the upper surface conductive pattern 24. Additionally, in... Figure 8 The example also illustrates the conveyor arm 9 supporting the two ends of the inspection fixture 28 in the X direction.

[0071] After the inspection fixture 28 is positioned between the platform 10 and the support 16, the conveyor arm 9 moves upward ( Figure 1The inspection fixture 28 is moved in the Z direction and conveyed to the support table 16. The pin 12 provided on the surface of the spring pin block 4 engages with the hole in the support table 16, thereby aligning the positions of the probes 26 at both ends with the conductive pattern 23 on the lower surface of the first substrate 2 and the lower portions 24a and 25a.

[0072] By conveying the inspection fixture 28 to the support table 16, the two probes 26, which are electrically connected to the energized needle 6, are electrically connected to the conductive pattern 23 on the lower surface of the first substrate 2. Thus, the energized needle 6 is electrically connected to the conductive pattern 23 on the lower surface via the second substrate 3 and the spring needle block 4. Furthermore, in Figure 3 In the example described above, the first substrate 2 comes into contact with the spring pin block 4, and the upper ends of the protruding probes 26 at both ends are pressed into the surface of the main body 30 of the spring pin block 4. The upper ends of the pressed probes 26 press against the conductive pattern 23 on the lower surface by the elastic restoring force, thereby reducing the contact resistance between the upper ends of the probes 26 and the conductive pattern 23 on the lower surface, and achieving a good connection between the probes 26 and the conductive pattern 23 on the lower surface.

[0073] Furthermore, by conveying the inspection fixture 28 to the support table 16, the two-end probes 26, which are electrically connected to the conductive member 5, are electrically connected to the lower surface portion 24a of the first substrate 2. Thus, the conductive member 5 is electrically connected to the upper surface conductive pattern 24 via the spring pin block 4 and the lower surface portion 24a. A good connection is achieved between the two-end probes 26 and the lower surface portion 24a through the elastic restoring force of the two-end probes 26.

[0074] Furthermore, by conveying the inspection fixture 28 to the support table 16, the other two probes 26, which are electrically connected to the energized needle 6, are electrically connected to the lower surface portion 25a of the first substrate 2. Thus, the energized needle 6 is electrically connected to the small signal pattern 25 via the second substrate 3, the spring needle block 4, and the lower surface portion 25a. Through the elastic restoring force of the two probes 26, a good connection can be achieved between the two probes 26 and the lower surface portion 24a.

[0075] On the other hand, regardless of whether the inspection fixture 28 is conveyed to the support table 16, the multiple end probes 26 are electrically connected to the upper conductive pattern of the second substrate 3. Furthermore, regardless of whether the inspection fixture 28 is conveyed to the support table 16, the conductive member 5 is arranged along the energized pin 6.

[0076] Platform 10

[0077] Platform 10 includes a conductive elastic member 7 disposed outside the mounting area of ​​semiconductor device 8. The conductive elastic member 7 is electrically connected to the lower electrode (not shown) of semiconductor device 8 mounted on platform 10 via the body of platform 10.

[0078] The semiconductor manufacturing apparatus according to Embodiment 1 uses an image recognition device (not shown) to identify the upper electrode pads, pins 12, and holes (not shown) on the support stage 16 of the semiconductor device 8 to correct the positional misalignment between the electrode pads and the energized pins 6. Then, it moves along the platform 10 to the inspection fixture 28, thereby... Figure 3 As shown, the energized pin 6 is electrically connected to the electrode pads of the semiconductor device 8, and the conductive member 5 is electrically connected to the conductive elastic member 7 of the platform 10. At this time, the conductive elastic member 7 is pressed into the conductive member 5 and undergoes elastic deformation.

[0079] <Tester 1>

[0080] The tester 1 is electrically connected to the conductive pattern 23 on the lower surface and the conductive pattern 24 on the upper surface, as shown by the dashed arrows. Figure 3 The tester 1 is electrically connected to the lower electrode of the semiconductor device 8 via the upper surface conductive pattern 24 and the conductive member 5, and is electrically connected to the upper electrode pads of the semiconductor device 8 via the lower surface conductive pattern 23 and the current-carrying pin 6. For example, the upper electrode pads of the semiconductor device 8 correspond to the emitter pads and the small signal pads, and the lower electrode of the semiconductor device 8 corresponds to the collector. Through such electrical connections, the tester 1 can measure the electrical characteristics of the semiconductor device 8.

[0081] <Summary of Implementation Method 1>

[0082] According to the semiconductor manufacturing apparatus of Embodiment 1 described above, the upper surface conductive pattern 24, which serves as the current path, and the lower surface conductive pattern 23, which serves as the return path, are arranged along each other on the upper and lower surfaces of the first substrate 2 during the test of measuring the electrical characteristics of the semiconductor device 8. This structure reduces the current loop area. Furthermore, since the spring pin block 4, the second substrate 3, the first insulating plate member 13, and the energized pin 6 are arranged in this vertical direction, the current path can be shortened. Moreover, since the conductive member 5 is arranged along these stacked structures, the current loop area can be reduced. As described above, the inductance of the current during testing can be reduced, thereby suppressing surge voltage during testing.

[0083] <Implementation Method 2>

[0084] Figure 9 and Figure 10 These are side sectional views and front sectional views showing the structure of the semiconductor manufacturing apparatus according to Embodiment 2. Figure 11 The image shown is a side cross-sectional view of the semiconductor manufacturing apparatus according to Embodiment 2 when measuring the electrical characteristics of the semiconductor device 8. Figure 12 This is a top view showing the structure of the inspection fixture 28 according to Embodiment 2.

[0085] In Embodiment 1, the inspection fixture 28 includes a spring pin block 4, but in Embodiment 2, the support platform 16 includes the spring pin block 4. In Embodiment 2, a plurality of probes 26 with both ends are electrically connected to the conductive pattern 23 on the lower surface of the first substrate 2 and are capable of contacting and separating from the conductive pattern on the upper surface of the second substrate 3. That is, regardless of whether the inspection fixture 28 is conveyed to the support platform 16, the probes 26 with both ends of the spring pin block 4 are electrically connected to the conductive pattern 23 on the lower surface of the first substrate 2. On the other hand, by conveying the inspection fixture 28 to the support platform 16, the probes 26 with both ends of the spring pin block 4 are electrically connected to the conductive pattern on the upper surface of the second substrate 3.

[0086] Similarly, the other two probes 26 are electrically connected to the lower surface portions 24a and 25a of the first substrate 2, and can contact and separate from the upper conductive pattern of the second substrate 3. The first insulating plate member 13 is configured to electrically connect the conductive member 5 to the lower conductive pattern of the second substrate 3. Therefore, by conveying the inspection fixture 28 to the support table 16, the conductive member 5 is electrically connected to the lower surface portion 24a via the two probes 26.

[0087] As described above, based on the structure where the spring pin block 4 is fixed on the support table 16, the cost of the inspection fixture 28 can be reduced because the spring pin block 4 can be omitted from the inspection fixture 28.

[0088] Furthermore, in this embodiment 2, an insulating limiting portion 17 protruding downwards is provided on the support platform 16. When the inspection fixture 28 is connected to the support platform 16 via the transfer arm 9, the spring needle block 4 (i.e., the main body 30), except for the probes 26 at both ends, does not contact the second substrate 3, but the limiting portion 17 contacts the first insulating plate member 13. As described above, when the energized needle 6 is electrically connected to the conductive pattern 23 on the lower surface, the limiting portion 17 prevents contact between the main body 30 of the spring needle block 4 and the second substrate 3, forming a gap between them, for example, tens to hundreds of μm.

[0089] This gap allows the influence of steps on the upper surface of the second substrate 3 to be suppressed. Furthermore, the elastic extension and retraction of the tips of the two probes 26 ensures electrical connection between the two probes 26 and the upper conductive pattern of the second substrate 3. Additionally, even if the parallelism between the spring pin block 4 and the second substrate 3 is slightly poor, electrical connection between the two probes 26 and the upper conductive pattern of the second substrate 3 can still be ensured. Moreover, the limiting portion 17 ensures that the inspection fixture 28 is parallel to the support stage 16, resulting in the lower part of the energized pin 6 being tilted and not detached from the electrode pads of the semiconductor device 8.

[0090] <Implementation Method 3>

[0091] Figure 13 This is a top view showing the structure of the inspection fixture 28 according to Embodiment 3. Figure 14 This is the main sectional view representing the structure, and it is along... Figure 13 A cross-sectional view along the C-C line. In this embodiment 3, the inspection fixture 28 includes multiple (in Figure 13 and Figure 14 In the example, there are two conductive components 5. Furthermore, each conductive component 5 is disposed between the support pillars 14.

[0092] Furthermore, when the upper electrode pad of the semiconductor device 8 corresponds to the emitter pad and the lower electrode of the semiconductor device 8 corresponds to the collector, it is preferable to bring the conductive member 5 close to the current-carrying needle 6 until a distance is reached where discharge will not occur due to the potential difference between the emitter and collector. Alternatively, the discharge resistance between the conductive member 5 and the current-carrying needle 6 can be improved by applying a material such as polyimide tape, which has higher insulation properties than air, to the conductive member 5.

[0093] Generally, the emitter current flowing through the energized needle 6 and the collector current flowing through the conductive member 5 are in opposite directions, thereby achieving the effect of mutually canceling their respective magnetic fields. This effect can also be obtained to some extent in embodiments 1 and 2, but as shown in this embodiment 3, the structure of the inspection fixture 28 including multiple conductive members 5 enhances this effect. As a result, the inductance of the current during testing can be reduced, thus suppressing surge voltage during testing.

[0094] <Implementation Method 4>

[0095] Figure 15 and Figure 16 These are side sectional views and front sectional views showing the structure of the semiconductor manufacturing apparatus according to Embodiment 4. Figure 17 This is a side cross-sectional view showing the state of the semiconductor manufacturing apparatus according to Embodiment 4 when measuring the electrical characteristics of the semiconductor device 8. Figure 18 This is a top view showing the structure of the inspection fixture 28 according to embodiment 4.

[0096] In this embodiment 4, as Figure 18 As shown, in top view, one or more conductive members 5 surround a plurality of energized pins 6 electrically connected to the semiconductor device 8 and serve to replace the support pillar 14. Additionally, a portion of the second insulating plate member 18 ( Figure 18 The left part of the middle part is missing, and conductive component 5 is as follows. Figure 17 As shown, the missing portion of the second insulating plate member 18 can contact the conductive elastic member 7.

[0097] As described above, based on the structure where one or more conductive members 5 surround multiple energized needles 6, the emitter current flowing through the energized needles 6 and the collector current flowing through the conductive members 5 flow in opposite directions, thereby enhancing the effect of mutually canceling their respective magnetic fields. This reduces the inductance of the current during testing, thus suppressing surge voltage during testing.

[0098] <Implementation Method 5>

[0099] Figure 19 and Figure 20 These are side sectional views and front sectional views showing the structure of the semiconductor manufacturing apparatus according to Embodiment 5. Figure 21 This is a side cross-sectional view showing the state of the semiconductor manufacturing apparatus according to Embodiment 5 when measuring the electrical characteristics of the semiconductor device 8. Figure 22 This is a top view showing the positional relationship between the first base plate 2, the transfer arm 9, and the inspection fixture 28 when the inspection fixture 28 is arranged between the platform 10 and the support table 16 in this embodiment 5.

[0100] In the semiconductor manufacturing apparatus described so far, the inspection fixture 28 includes a conductive member 5, but in this embodiment 5, as... Figure 20 As shown, the support platform 16 includes a conductive member 5. That is, regardless of whether the inspection jig 28 is conveyed to the support platform 16, the conductive member 5 is electrically connected to the lower surface portion 24a of the first substrate 2. On the other hand, by conveying the inspection jig 28 to the support platform 16, the conductive member 5 is positioned along the energized needle 6. Furthermore, a through hole for inserting the conductive member 5 is provided on the first insulating plate member 13.

[0101] As described above, based on the structure where the conductive member 5 is fixed on the support platform 16, the cost of the inspection fixture 28 can be reduced because the conductive member 5 can be omitted from the inspection fixture 28.

[0102] <Implementation Method 6>

[0103] Figure 23 and Figure 24 These are side sectional views and front sectional views showing the structure of the semiconductor manufacturing apparatus according to Embodiment 6. Figure 25 This is a cross-sectional view showing the state of the semiconductor manufacturing apparatus according to Embodiment 6 when measuring the electrical characteristics of the semiconductor device 8. Figure 26 This is a top view showing the positional relationship between the first base plate 2, the transfer arm 9, and the inspection fixture 28 when the inspection fixture 28 is arranged between the platform 10 and the support table 16 in this embodiment 6.

[0104] In the semiconductor manufacturing apparatus described so far, the second substrate 3 includes a lower conductive pattern and an upper conductive pattern electrically connected to each other through conductive members via through-holes. In contrast, in this embodiment 6, the second substrate 3 includes wires 21, terminals 22, terminal blocks 27, and conductive members 29 instead of these, and the first insulating plate member 13 includes a protrusion 20.

[0105] The protrusion 20 of the first insulating plate member 13 protrudes from the upper surface of the first insulating plate member 13 and is electrically connected to the energizing pin 6. The terminal block 27 of the second substrate 3 is the upper surface of the second substrate 3. The terminal 22 is disposed on the terminal block 27 and is electrically connected to the protrusion 20 via the wire 21.

[0106] By increasing the size of the protrusion 20, multiple wires 21 can also be electrically connected to a single protrusion 20. The length of the wires 21 is set with wiring operations in mind. The wires 21 are housed within cavities formed on the second substrate 3 through countersunk holes. After the terminal block 27 is configured to cover the cavity, it is positioned with pins (not shown) and fixed to the body of the second substrate 3 with screws or the like.

[0107] According to the above structure, the terminal 22 of the second substrate 3 is electrically connected to the energized pin 6 via the wire 21 and the protrusion 20. Furthermore, the conductive member 29 is configured to be electrically connected to the energized pin 6. By conveying the inspection jig 28 to the support table 16, the terminal 22 of the second substrate 3 is electrically connected to the small signal pattern 25 via the lower surface portion 25a, and the conductive member 29 is electrically connected to the lower surface conductive pattern 23. In other words, the second substrate 3 includes a conductive member 29 capable of being electrically connected to the lower surface conductive pattern 23. With this structure, similar to the semiconductor manufacturing apparatus described so far, the energized pin 6 can be electrically connected to the small signal pattern 25 or to the lower surface conductive pattern 23.

[0108] Furthermore, depending on the various positions of the electrode pads (not shown) provided on the upper side of the semiconductor device 8, the positions of the energizing probe 6 and the protrusion 20 can be changed, or the connection pattern of the wire 21 connecting the protrusion 20 and the terminal 22 can be changed. With this structure, even without changing the configuration pattern of the probes 26 at both ends, or without replacing the second substrate 3, the electrical characteristics of various semiconductor devices 8 with different electrode pad positions and shapes can be measured. As a result, it is expected that the cost of the inspection fixture 28 for measuring the electrical characteristics of various semiconductor devices 8 can be reduced.

[0109] Furthermore, this embodiment 6 is also applicable to embodiments 1 to 5. For example, when this embodiment 6 is applied to embodiment 2, the limiting part 17 will obstruct the contact between the main body 30 of the spring pin block 4 and the second substrate 3, forming a gap of, for example, tens of μm to hundreds of μm between them, thus achieving the same effect as embodiment 2.

[0110] <Implementation Method 7>

[0111] Figure 27 This is a flowchart illustrating a method for manufacturing a semiconductor device according to Embodiment 7. Furthermore, this manufacturing method is performed in the semiconductor manufacturing apparatus according to Embodiments 1 to 6.

[0112] In step S1, the transfer arm 9 supports one of the inspection fixtures 28, suitable for measuring the electrical characteristics of the semiconductor device 8, among a plurality of inspection fixtures 28. At this time, the inspection fixture 28 is positioned relative to the transfer arm 9 by means of the pin 12. In step S2, the semiconductor manufacturing apparatus identifies the inspection fixture 28 by reading a QR code (not shown) or similar material supported by the transfer arm 9.

[0113] In step S3, the semiconductor manufacturing apparatus determines whether the identified inspection fixture 28 corresponds to the semiconductor device 8 to be tested. If a correspondence is determined, the process proceeds to step S4; if a non-correspondence is determined, the process proceeds to step S15.

[0114] In step S4, the transfer arm 9 moves horizontally (e.g., in the Y direction) to transport the identified inspection fixture 28 above the platform 10. In step S5, the transfer arm 9 moves upward (in the Z direction) to transport the inspection fixture 28 above the platform 10 toward the support table 16. This transport connects the inspection fixture 28 to the support table 16, electrically connecting the energized pin 6 to the conductive pattern 23 on the lower surface of the first substrate 2. At this time, the inspection fixture 28 is positioned relative to the support table 16 using the pin 12 of the inspection fixture 28.

[0115] In step S6, the semiconductor manufacturing apparatus determines whether a semiconductor device 8 to be tested exists. If it is determined that a semiconductor device 8 to be tested exists, the process proceeds to step S7; otherwise, if it is determined that no semiconductor device 8 to be tested exists... Figure 27 The action ended.

[0116] In step S7, the semiconductor manufacturing apparatus places the semiconductor device 8 to be tested onto the platform 10. In step S8, the semiconductor manufacturing apparatus adsorbs the placed semiconductor device 8 onto the platform 10. In step S9, the semiconductor manufacturing apparatus uses a camera (not shown) to identify the adsorbed semiconductor device 8. In step S10, the semiconductor manufacturing apparatus controls the platform 10 based on the positional offset between the identified semiconductor device 8 and the energized pin 6 electrically connected to the conductive pattern 23 on the lower surface, thereby correcting for the positional offset.

[0117] In step S11, the platform 10 moves toward the inspection fixture 28, thereby electrically connecting the energized pin 6 to the semiconductor device 8 and electrically connecting the conductive member 5 to the conductive elastic member 7 of the platform 10. In step S12, the semiconductor manufacturing apparatus measures the electrical characteristics of the semiconductor device 8 using the tester 1. In step S13, the semiconductor manufacturing apparatus detects whether the semiconductor device 8 is damaged, for example, based on the measurement results, by measuring the electrical characteristics. If the semiconductor device 8 is detected to be damaged, the process proceeds to step S14; if the semiconductor device 8 is detected to be undamaged, the process proceeds to step S6, and the measurement and testing of the semiconductor device 8 continues as appropriate.

[0118] In step S14, the transfer arm 9 moves downward, disconnecting the electrical connection between the energized needle 6 and the conductive pattern 23 on the lower surface of the first substrate 2, and moves horizontally. In step S15, the transfer arm 9 releases its support from the currently supported inspection fixture 28. Then, proceeding to step S1, the transfer arm 9 supports another inspection fixture 28 suitable for measuring the electrical characteristics of the semiconductor device 8. In other words, if damage to the semiconductor device 8 is detected, the inspection fixture 28 is automatically replaced.

[0119] According to the manufacturing method of the semiconductor manufacturing apparatus described in Embodiment 7 above, when the semiconductor device 8 is detected to be damaged by measuring its electrical characteristics, the inspection fixture 28 is automatically replaced. With this structure, downtime during the electrical characteristic measurement and testing of the semiconductor device 8 can be reduced. Furthermore, when measuring and testing various semiconductor devices 8 with different electrode pad configurations, the hassle of operators confirming and setting the model of the inspection fixture 28 can be eliminated.

[0120] Furthermore, in this English disclosure, "a" and "an" indicate one or more. Therefore, "a," "an," "one or more," and "at least one" can have the same meaning.

[0121] Furthermore, it is possible to freely combine various implementation methods and variations, and to appropriately modify or omit various implementation methods and variations.

[0122] The various methods disclosed herein are summarized and recorded below as appendices.

[0123] (Note 1) A semiconductor manufacturing apparatus, comprising:

[0124] A platform containing semiconductor devices;

[0125] A support stage disposed above the platform and comprising the first substrate; and

[0126] An inspection fixture can be configured between the platform and the support.

[0127] An upper surface conductive pattern is provided on the upper surface of the first substrate, which is electrically connected to a lower surface portion that is part of the lower surface of the first substrate.

[0128] A lower surface conductive pattern is disposed on the lower surface of the first substrate, excluding the lower surface portion, along the upper surface conductive pattern.

[0129] The inspection fixture includes:

[0130] A power-on pin that can be electrically connected to the semiconductor device;

[0131] A second substrate, disposed above the energized needle, includes a lower portion electrically connected to the energized needle and an upper portion electrically connected to the lower portion; and

[0132] An insulating plate component covers the upper part of the energizing pin on the lower side of the second substrate, and is capable of electrically connecting the energizing pin to the lower part of the second substrate.

[0133] The support platform or the inspection fixture includes a spring pin block having spring pins electrically connected to either the conductive pattern on the lower surface of the first substrate or the upper portion of the second substrate, and capable of contacting and separating from the other.

[0134] The support platform or the inspection fixture includes a conductive member that can be configured along the energized pin and electrically connects the platform to the lower surface portion of the first substrate.

[0135] The semiconductor manufacturing apparatus further includes: a tester electrically connected to the lower surface conductive pattern and the upper surface conductive pattern; and...

[0136] The transfer unit, by transferring the inspection fixture toward the support table, electrically connects the energized needle to the conductive pattern on the lower surface via the second substrate and the spring needle block.

[0137] (Postscript 2)

[0138] The semiconductor manufacturing apparatus as described in Appendix 1, wherein...

[0139] The inspection fixture includes the spring pin block.

[0140] Regardless of whether the inspection fixture is moved toward the support platform, the spring pins of the spring pin block are electrically connected to the upper part of the second substrate.

[0141] By conveying the inspection fixture toward the support platform, the spring pins of the spring pin block are electrically connected to the conductive pattern on the lower surface of the first substrate.

[0142] (Note 3)

[0143] The semiconductor manufacturing apparatus as described in Appendix 1 or Appendix 2, wherein...

[0144] The inspection fixture includes the conductive component.

[0145] Regardless of whether the inspection fixture is moved toward the support platform, the conductive member is positioned along the energized needle.

[0146] By conveying the inspection fixture toward the support platform, the conductive member is electrically connected to the lower surface portion of the first substrate.

[0147] (Note 4)

[0148] The semiconductor manufacturing apparatus as described in Appendix 1, wherein...

[0149] The support platform includes the spring pin block.

[0150] Regardless of whether the inspection fixture is moved toward the support platform, the spring pins of the spring pin block are electrically connected to the conductive pattern on the lower surface of the first substrate.

[0151] By conveying the inspection fixture toward the support platform, the spring pins of the spring pin block are electrically connected to the upper part of the second substrate.

[0152] (Note 5)

[0153] The semiconductor manufacturing apparatus as described in Appendix 4, wherein...

[0154] The support platform includes an insulating limiting portion that, when the energized pin is electrically connected to the conductive pattern on the lower surface, prevents contact between the body of the spring pin block and the second substrate.

[0155] (Note 6)

[0156] The semiconductor manufacturing apparatus as described in any one of Appendices 1 to 5, wherein,

[0157] The support platform or the inspection fixture includes a plurality of the conductive components.

[0158] (Note 7)

[0159] The semiconductor manufacturing apparatus as described in any one of Appendices 1 to 6, wherein...

[0160] When viewed from above, the conductive member surrounds the plurality of energized pins that are electrically connected to the semiconductor device.

[0161] (Postscript 8)

[0162] The semiconductor manufacturing apparatus as described in Appendix 1 or Appendix 4, wherein...

[0163] The support platform includes the conductive component.

[0164] Regardless of whether the inspection fixture is moved toward the support platform, the conductive member is electrically connected to the lower surface portion of the first substrate.

[0165] As the inspection fixture is moved toward the support platform, the conductive member is positioned along the energized needle.

[0166] (Note 9)

[0167] The semiconductor manufacturing apparatus as described in any one of Annexes 1 to 8, wherein,

[0168] The second substrate includes:

[0169] The lower conductive pattern is the lower part of the lower portion of the second substrate;

[0170] The upper conductive pattern of the upper part of the second substrate; and

[0171] A conductive component is disposed in a through hole extending in the vertical direction in the second substrate, and electrically connects the lower conductive pattern to the upper conductive pattern.

[0172] (Postscript 10)

[0173] The semiconductor manufacturing apparatus as described in Appendix 9, wherein...

[0174] The lower surface portion is the first lower surface portion.

[0175] A small signal pattern is provided on the upper surface of the first substrate. This small signal pattern is electrically connected to a second lower surface portion, which is part of the lower surface of the first substrate and is different from the first lower surface portion.

[0176] The through-hole of the second substrate is located opposite to the conductive pattern on the lower surface and the portion of the second lower surface.

[0177] (Postscript 11)

[0178] The semiconductor manufacturing apparatus as described in any one of Annexes 1 to 8, wherein,

[0179] The second substrate includes conductive components capable of being electrically connected to the conductive pattern on the lower surface.

[0180] (Postscript 12)

[0181] The semiconductor manufacturing apparatus as described in any one of Annexes 1 to 8, wherein,

[0182] The insulating plate component includes a protrusion that protrudes from the upper surface of the insulating plate component and is electrically connected to the energized pin.

[0183] The second substrate includes:

[0184] wire;

[0185] The terminal block serves as the upper surface of the second substrate; and

[0186] A terminal is disposed on the terminal block and electrically connected to the protrusion via the wire.

[0187] (Postscript 13)

[0188] A method for manufacturing a semiconductor device, using a semiconductor manufacturing apparatus as described in any one of Appendices 1 to 12, comprising:

[0189] The process of supporting the inspection fixture with the conveyor unit;

[0190] The process of identifying the inspection fixture supported by the conveying unit;

[0191] The process of the conveyor unit conveying the identified inspection fixture to the top of the platform;

[0192] The process of conveying the inspection fixture that has been conveyed to the support table and placed above the platform, thereby electrically connecting the energized needle to the conductive pattern on the lower surface;

[0193] The process of placing the semiconductor device on the platform;

[0194] The process of adsorbing the placed semiconductor device onto the platform;

[0195] The process of identifying the adsorbed semiconductor device;

[0196] The process of correcting the positional offset between the identified semiconductor device and the energized pin electrically connected to the conductive pattern on the lower surface;

[0197] After correcting the positional offset, the platform moves toward the inspection fixture, thereby electrically connecting the energized needle to the semiconductor device and electrically connecting the conductive component to the platform.

[0198] The process of measuring the electrical characteristics of the semiconductor device using the tester;

[0199] The process of detecting whether the semiconductor device is damaged by measuring the electrical characteristics; and

[0200] The process of automatically replacing the inspection fixture when the semiconductor device is detected to be damaged.

[0201] Label Explanation

[0202] 1 Tester, 2 First substrate, 3 Second substrate, 4 Spring pin block, 5 Conductive component, 6 Current-carrying pin, 8 Semiconductor device, 9 Conveyor arm, 10 Platform, 13 First insulating plate component, 16 Support platform, 17 Restriction part, 20 Protrusion, 21 Wire, 22 Terminal, 23 Lower surface conductive pattern, 24 Upper surface conductive pattern, 24a Lower surface portion, 25 Small signal pattern, 26 Two-end probes, 27 Terminal block, 28 Inspection fixture, 29 Conductive component.

Claims

1. A semiconductor manufacturing apparatus, characterized in that, include: A platform containing semiconductor devices; A support platform disposed above the platform and comprising the first substrate; as well as An inspection fixture can be configured between the platform and the support. An upper surface conductive pattern is provided on the upper surface of the first substrate, which is electrically connected to a lower surface portion that is part of the lower surface of the first substrate. A lower surface conductive pattern is disposed on the lower surface of the first substrate, excluding the lower surface portion, along the upper surface conductive pattern. The inspection fixture includes: A power-on pin that can be electrically connected to the semiconductor device; A second substrate, disposed above the energized needle, includes a lower portion electrically connected to the energized needle and an upper portion electrically connected to the lower portion; and An insulating plate component covers the upper part of the energizing pin on the lower side of the second substrate, and is capable of electrically connecting the energizing pin to the lower part of the second substrate. The support platform or the inspection fixture includes a spring pin block having spring pins electrically connected to either the conductive pattern on the lower surface of the first substrate or the upper portion of the second substrate, and capable of contacting and separating from the other. The support platform or the inspection fixture includes a conductive member that can be configured along the energized pin and electrically connects the platform to the lower surface portion of the first substrate. The semiconductor manufacturing apparatus further includes: a tester electrically connected to the lower surface conductive pattern and the upper surface conductive pattern; and... The transfer unit electrically connects the energized needle to the conductive pattern on the lower surface via the second substrate and the spring needle block by transferring the inspection fixture toward the support table.

2. The semiconductor manufacturing apparatus as claimed in claim 1, characterized in that, The inspection fixture includes the spring pin block. Regardless of whether the inspection fixture is moved toward the support platform, the spring pins of the spring pin block are electrically connected to the upper part of the second substrate. By conveying the inspection fixture toward the support platform, the spring pins of the spring pin block are electrically connected to the conductive pattern on the lower surface of the first substrate.

3. The semiconductor manufacturing apparatus as described in claim 1 or 2, characterized in that, The inspection fixture includes the conductive component. Regardless of whether the inspection fixture is moved toward the support platform, the conductive member is positioned along the energized needle. By conveying the inspection fixture toward the support platform, the conductive member is electrically connected to the lower surface portion of the first substrate.

4. The semiconductor manufacturing apparatus as claimed in claim 1, characterized in that, The support platform includes the spring pin block. Regardless of whether the inspection fixture is moved toward the support platform, the spring pins of the spring pin block are electrically connected to the conductive pattern on the lower surface of the first substrate. By conveying the inspection fixture toward the support platform, the spring pins of the spring pin block are electrically connected to the upper part of the second substrate.

5. The semiconductor manufacturing apparatus as claimed in claim 4, characterized in that, The support platform includes an insulating limiting portion that, when the energized pin is electrically connected to the conductive pattern on the lower surface, prevents contact between the body of the spring pin block and the second substrate.

6. The semiconductor manufacturing apparatus according to any one of claims 1 to 5, characterized in that, The support platform or the inspection fixture includes a plurality of the conductive components.

7. The semiconductor manufacturing apparatus according to any one of claims 1 to 6, characterized in that, When viewed from above, the conductive member surrounds the plurality of energized pins that are electrically connected to the semiconductor device.

8. The semiconductor manufacturing apparatus as claimed in claim 1 or 4, characterized in that, The support platform includes the conductive component. Regardless of whether the inspection fixture is moved toward the support platform, the conductive member is electrically connected to the lower surface portion of the first substrate. As the inspection fixture is moved toward the support platform, the conductive member is positioned along the energized needle.

9. The semiconductor manufacturing apparatus according to any one of claims 1 to 8, characterized in that, The second substrate includes: The lower conductive pattern is the lower part of the lower portion of the second substrate; The upper conductive pattern of the upper part of the second substrate; and A conductive component is disposed in a through hole extending in the vertical direction in the second substrate, and electrically connects the lower conductive pattern to the upper conductive pattern.

10. The semiconductor manufacturing apparatus as claimed in claim 9, characterized in that, The lower surface portion is the first lower surface portion. A small signal pattern is provided on the upper surface of the first substrate. This small signal pattern is electrically connected to a second lower surface portion, which is part of the lower surface of the first substrate and is different from the first lower surface portion. The through-hole of the second substrate is located opposite to the conductive pattern on the lower surface and the portion of the second lower surface.

11. The semiconductor manufacturing apparatus according to any one of claims 1 to 8, characterized in that, The second substrate includes conductive components capable of being electrically connected to the conductive pattern on the lower surface.

12. The semiconductor manufacturing apparatus according to any one of claims 1 to 8, characterized in that, The insulating plate component includes a protrusion that protrudes from the upper surface of the insulating plate component and is electrically connected to the energized pin. The second substrate includes: wire; The terminal block serves as the upper surface of the second substrate; and A terminal is disposed on the terminal block and electrically connected to the protrusion via the wire.

13. A method for manufacturing a semiconductor device, using the semiconductor manufacturing apparatus as described in any one of claims 1 to 12, characterized in that, include: The process of supporting the inspection fixture with the conveyor unit; The process of identifying the inspection fixture supported by the conveying unit; The process of the conveyor unit conveying the identified inspection fixture to the top of the platform; The process of conveying the inspection fixture that has been conveyed to the support table and placed above the platform, thereby electrically connecting the energized needle to the conductive pattern on the lower surface; The process of placing the semiconductor device on the platform; The process of adsorbing the placed semiconductor device onto the platform; The process of identifying the adsorbed semiconductor device; The process of correcting the positional offset between the identified semiconductor device and the energized pin electrically connected to the conductive pattern on the lower surface; After correcting the positional offset, the platform moves toward the inspection fixture, thereby electrically connecting the energized needle to the semiconductor device and electrically connecting the conductive component to the platform. The process of measuring the electrical characteristics of the semiconductor device using the tester; The process of detecting whether the semiconductor device is damaged by measuring the electrical characteristics; as well as The process of automatically replacing the inspection fixture when the semiconductor device is detected to be damaged.

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