Power module and base plate for power module

Abstract

This disclosure provides a power module. The power module includes a first lead frame, a first bare die, a substrate, a second lead frame, and a second bare die. The first lead frame has first and second portions. The first bare die is disposed above the first portion of the first lead frame. A first power device is formed above the first bare die. The substrate is disposed above the second portion of the first lead frame. The second lead frame is disposed on the substrate. The second bare die is disposed above the second lead frame, wherein a first control circuit is formed on the second bare die, and the first control circuit is used to control the first power device.

Description

Technical Field

[0001] Embodiments of this disclosure relate to an integrated power module, and more specifically to a substrate for mounting components of the integrated power module. Background Technology

[0002] Integrated power modules can meet the increasing current capacities required for power delivery in server / networking and automotive applications by integrating various components needed for the power delivery phase: power devices, controllers, and passive components, all in a small, compact package. All these components are carefully designed and mounted on the same substrate, taking into account the circuit's functional characteristics, trace spacing, heat dissipation, and weight. Power devices, such as SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) or junction-gate field-effect transistors (JFETs), GaN field-effect transistors (FETs), Si insulated-gate bipolar transistors (IGBTs), Si metal-oxide-semiconductor field-effect transistors, and Si super-junction MOSFETs (SJ MOSFETs), act as switches in the power circuit. These power devices generate significant heat during operation, which must be properly guided and dissipated. The controller is the subsystem responsible for managing the operation of the power devices and maintaining the output voltage and current at the required levels. These controllers are typically Si integrated circuits distributed close to power devices, and are highly sensitive to the high temperatures generated by heat accumulation.

[0003] When the controller reaches its thermal shutdown limit temperature, protective measures are implemented to prevent overheating and potential damage, thereby ensuring the safety and reliability of the power module. However, if the thermal management of the substrate can be improved, the controller is less likely to reach its thermal shutdown limit temperature, thus allowing the power module to achieve more efficient performance. Summary of the Invention

[0004] According to some embodiments disclosed herein, a substrate for a power module includes a thermally conductive base plate and a dielectric material layer. The thermally conductive base plate includes a first side and a second side opposite to the first side. The dielectric material layer is disposed on the first side of the thermally conductive base plate. The substrate has a first region, a second region, and a third region, wherein the first region is used to carry power devices of the power module, the second region is used to carry the controller of the power module, and the third region is not filled with electronic devices, wherein the third region is located between the first region and the second region. The thermally conductive base plate includes a first groove, the position of which corresponds to the position of the third region of the substrate.

[0005] In some embodiments, the first groove opens from the first side of the heat-conducting base plate.

[0006] In some embodiments, the dielectric material layer includes a first portion having a first thickness and a second portion having a second thickness greater than the first thickness, and wherein the dielectric material layer is housed in the first side.

[0007] In some embodiments, the dielectric material layer includes a stepped feature received by a first groove, wherein the stepped feature is disposed below a third region.

[0008] In some embodiments, the heat-conducting base plate further includes a second groove that opens from the second side of the heat-conducting base plate, wherein the second groove is disposed below the third region.

[0009] In some embodiments, the heat-conducting base plate further includes a third groove that opens from the second side of the heat-conducting base plate, wherein the position of the third groove corresponds to the position of the first groove and the position of the second groove.

[0010] In some embodiments, the first groove opens from the second side of the heat-conducting base plate and is disposed below the third region.

[0011] In some embodiments, the heat-conducting base plate further includes a third groove that opens from the second side of the heat-conducting base plate, wherein the position of the third groove corresponds to the position of the first groove.

[0012] According to a partial embodiment of this disclosure, an integrated power module includes a substrate, at least some power devices, and at least one controller. The substrate includes a thermally conductive base plate and a dielectric material layer. The thermally conductive base plate includes a first side and a second side opposite to the first side. The dielectric material layer is disposed on the first side of the thermally conductive base plate. At least some power devices are disposed on a first region of the substrate. At least one controller is disposed on a second region of the substrate. A third region of the substrate is located between the first and second regions, wherein the third region is not filled with electronic devices. The thermally conductive base plate includes a first groove, the position of which corresponds to the position of the third region of the substrate.

[0013] In some embodiments, the power device and at least one controller are supported by the same thermally conductive base plate.

[0014] In some embodiments, the integrated power module further includes a first set of pins and a second set of pins. The first set of pins is arranged around a first side of the substrate, and the power device is closer to the first set of pins than at least one controller. The second set of pins is arranged around a second side of the substrate, and at least one controller is closer to the second set of pins than the power device, wherein the second side is opposite to the first side of the substrate. The first set of pins is bonded to the substrate by solder, while the second set of pins is not bonded to the substrate by solder.

[0015] In some embodiments, the first groove opens from the first side of the heat-conducting base plate.

[0016] In some embodiments, the dielectric material layer includes a first portion having a first thickness and a second portion having a second thickness greater than the first thickness, and wherein the dielectric material layer is housed in the first side.

[0017] In some embodiments, the dielectric material layer includes a stepped feature received by a first groove, wherein the stepped feature is disposed below a third region.

[0018] In some embodiments, the heat-conducting base plate further includes a second groove that opens from the second side of the heat-conducting base plate, wherein the second groove is disposed below the third region.

[0019] In some embodiments, the heat-conducting base plate further includes a third groove that opens from the second side of the heat-conducting base plate, wherein the position of the third groove corresponds to the position of the first groove and the position of the second groove.

[0020] In some embodiments, the first groove opens from the second side of the heat-conducting base plate and is disposed below the third region.

[0021] In some embodiments, the heat-conducting base plate further includes a third groove that opens from the second side of the heat-conducting base plate, wherein the position of the third groove corresponds to the position of the first groove. Attached Figure Description

[0022] Figure 1 This is a schematic diagram of a power module according to an exemplary embodiment of the present disclosure.

[0023] Figure 2A and Figure 2B The figures are a plan view and a side view of a power module according to an exemplary embodiment of the present disclosure.

[0024] Figure 3A and Figure 3B The following are side views and plan views of a power module according to an exemplary embodiment of the present disclosure.

[0025] Figure 4A and Figure 4B The following are side views and plan views of a power module according to an exemplary embodiment of the present disclosure.

[0026] Figure 4C This is a plan view of a power module according to an exemplary embodiment of the present disclosure.

[0027] Figure 5A This is a side view of a power module according to an exemplary embodiment of the present disclosure.

[0028] Figure 5B This is a side view of a power module according to an exemplary embodiment of the present disclosure. Detailed Implementation

[0029] The detailed description of implementation methods provided herein is merely illustrative and not intended to be limiting. Numerous details are provided herein to aid the reader in fully understanding this disclosure. However, many other implementations of the disclosure of this application described herein will be readily apparent. For simplicity, this disclosure may not involve the description of materials and methods known in the art.

[0030] Throughout the specification and claims, unless the context clearly indicates otherwise, the articles “a,” “an,” and “the” are intended to include the plural form. The phrases “one embodiment,” “an implementation,” “an example,” and “an example” do not necessarily refer to the same embodiment or example. Furthermore, these features, structures, or characteristics may be combined in one or more embodiments or examples. Throughout the specification and claims, the ordinal numbers “first,” “second,” and “third” are intended to indicate distinct features, not necessarily in order. For example, a “second conductive network” is a conductive network different from a “first conductive network.”

[0031] According to some embodiments of this disclosure, an exemplary power module is shown in the figure. Figure 1 This is a schematic diagram of the power module 100. Figure 2A and Figure 2B These are the plan view and side view of the power module 100. Figure 3A and Figure 3B These are the side view and plan view of power module 200. Figure 4A and Figure 4B These are the side view and plan view of the power module 300. Figure 5A and Figure 5B These are side views of power module 400 and power module 500. The following descriptions are for reference only. Figure 1 Each of Figures 2, 3, 4 and 5.

[0032] refer to Figure 1 and Figure 2B The power module 100's substrate 10 includes a thermally conductive base plate 28 made of copper, aluminum, or the like, which provides mechanical structure and high thermal conductivity. The thermally conductive base plate 28 has a first side 44 and a second side 45 opposite to the first side 44. The substrate 10 also includes a patterned metallization layer 11 consisting of a number of traces or pads made of copper, aluminum, gold, or any suitable alloy. Components required for the power module 100—power devices 14-21, controllers 22-25, and other suitable electronic devices—are attached to the patterned metallization layer 11 at predetermined mounting locations via soldering material (not shown) or the like. In some embodiments, a dielectric material layer 29 capable of providing isolation between all components and the thermally conductive base plate 28 is arranged between the patterned metallization layer 11 and the first side 44 of the thermally conductive base plate 28, covering the entire area of ​​the first side 44 of the thermally conductive base plate 28.

[0033] Bond wire 30 is used to provide electrical interconnection between components, pins 121 and 122, and the patterned metallization layer 11. For example... Figure 2B As shown, a larger diameter bonding wire 31 is used between the power device 16 and the pin 121 to provide a relatively high current electrical interconnect. In some embodiments of this disclosure, such as... Figure 2B , Figure 3A , Figure 4A and Figure 5A As shown, power devices 14-21 and controllers 22-25 are supported by the same thermally conductive base plate 28, instead of two separate thermally conductive base plates. This design allows for reduced assembly difficulties. Sufficient support for the substrate 32 can be achieved by bonding pins 121 to the patterned metallization layer 11 using solder material (not shown) or the like, without bonding pins 122 to the substrate 32 using solder material or the like. Reference Figure 2A The housing 13, made of molding compound, encapsulates all components of the power module 100, providing mechanical structure, CTE matching, and high-voltage isolation. One end of each pin 121 and 122 protrudes from the housing 13 to provide contacts for external electrical connections.

[0034] When unfolding components on substrate 10, many factors need to be considered. For example, components with similar characteristics can be arranged symmetrically with respect to the substrate or housing, resulting in symmetrical heat dissipation and weight distribution, which can improve the reliability of power module 100. Furthermore, reducing the total length of bonding wires and avoiding overlap and crossing of bonding wires can reduce resistance. Substrate 10 may include a first region A for carrying power devices 14-21. As one embodiment, in Figure 1In this embodiment, power devices 14-21 are generally distributed along a horizontal axis 46 of the power module 100, which passes through the centerline of the housing 13 along its length. The substrate 10 may include a second region B and a third region C, where the second region B is used to house controllers 22-25, and the third region C is unfilled with electronic devices and is located between the first region A and the second region B. As an example, in... Figure 1 In this embodiment, controllers 22-25 are arranged on one side of power devices 14-21, leaving a narrow channel 39 in the substrate 32, which is not filled with electronic components. In other embodiments, there may be other power devices and other controllers in the power module, which are not shown in these exemplary figures.

[0035] Now for reference Figure 2A and Figure 2B Each power device 14–21 is a heat-generating center, which can cause the maximum junction temperature between the power device and the patterned metallization layer 11 to rise to 150°C. Most of the heat is dissipated through the metal substrate 28, which can be further attached to a heat sink or system housing, thus ultimately releasing the heat into the environment. However, heat can also travel along… Figure 2B The path shown conducts from power devices 14-21 through the metal substrate 28 to nearby controllers 22-25, resulting in an undesirable increase in the maximum junction temperature between controllers 22-25 and the patterned metallization layer 11. In one embodiment, the maximum junction temperature between controllers 22-25 and the patterned metallization layer 11 can rise to 87°C.

[0036] Figure 3A and Figure 3B These are side and plan views of the power module 200. The substrate 32 of the power module 200 includes a thermally conductive base plate 33 with a recess 34 designed to accommodate dielectric material layers 35 of varying thicknesses. The dielectric material layer 35 has a stepped design, comprising a first portion 36 with a first thickness T1 and a second portion 37 with a thickness T2 greater than T1, while maintaining a flat top surface throughout the layer. However, in other embodiments, the dielectric material layer 35 does not necessarily need to have a flat surface. Figure 3B In the illustrated embodiment, by means of... Figure 1For comparison, the position of the groove 34 corresponds to the position of the third region C of the substrate 32. That is, at the corresponding position in the first region A, the heat-conducting base plate includes a first top side region with a flat surface, while at the corresponding position in the third region C, there is a second top side region that is recessed or sunken relative to the first top side region. In some embodiments, the second top side region with the recessed or sunken surface may be arranged to correspond to the entire region of the third region C and the second region B. The connection between the first portion 36 and the second portion 37 is a stepped feature 38. The stepped feature 38 may be interrupted. Figure 2B The heat conduction path shown makes the heat transfer from the power device to the controller less direct. Figure 3B In the illustrated embodiment, by means of... Figure 1 By comparison, it can be seen that the second portion 37 of the dielectric material 35 is disposed below the first region A where the controllers 22-25 are arranged. The first portion 36 of the dielectric material layer is disposed below the second region B where the power devices 14-21 are arranged. The stepped feature 38 is disposed below the third region C where the unfilled channel 39 is located.

[0037] Figure 4A and Figure 4B These are side and plan views of the power module 300. The substrate 40 of the power module 300 includes a recess 42 opening from a second side 45 of a heat-conducting base plate 41. A dielectric material layer 29 of uniform thickness is disposed on a first side 44 of the heat-conducting base plate 41, covering the entire area of ​​the first side 44 of the heat-conducting base plate 41. The recess 42 thins a specific portion of the base plate 41, thereby increasing... Figure 2B The thermal resistance of the heat conduction path shown makes it less effective. The location of the groove 42 corresponds to the location of the third region C of the substrate. Figure 4B In the illustrated embodiment, by means of... Figure 1 By comparison, it can be seen that the groove 42 can be a full-line groove 42 disposed below the third region C where the unfilled channel 39 is located. In other embodiments, such as Figure 4C As shown, the recess 42 may include two separate grooves 421 and 422 disposed below the third region C. In some embodiments of this disclosure, a third recess 47 is designed to open from the second side 45 of the thermally conductive base plate 41 to mitigate substrate warping. The position of the third recess 47 corresponds to the position of the second recess 42. In one embodiment, the third recess 47 and the second recess 42 are arranged substantially symmetrically with respect to the substrate 40.

[0038] Figure 5A and Figure 5BThese are side views of power modules 400 and 500. In these embodiments, the thermally conductive base plate 41 includes a first recess 34 opening from a first side 44 and a second recess 42 opening from a second side 45. A dielectric material layer 35 having a first portion 36 of a first thickness T1 and a second portion 37 of a thickness T2 can be just accommodated in the first side 44 while maintaining a flat top surface across the entire layer, wherein the thickness T2 is greater than the first thickness T1. However, in other embodiments, the dielectric material layer 35 does not necessarily need to have a flat surface. The connection between the first portion 36 and the second portion 37 is a stepped feature 38. The stepped feature 38 can be arranged below the third region C, such as... Figure 5A As shown, closer to the first region A rather than the second region B, or as... Figure 5B As shown, it is closer to the second region B than the first region A. In Figure 5A In the illustrated embodiment, the second groove 42 is disposed below the third region C and below the second portion 37 of the dielectric material layer, while Figure 5B In the illustrated embodiment, the second groove 42 is disposed below the third region C and below the first portion 36 of the dielectric material layer. By arranging the first groove 34 and the second groove 42 on the thermally conductive base plate 41, heat conduction from the first region A to the second region B can be greatly reduced.

[0039] Although some embodiments of this disclosure have been described in detail above, it should be understood that these embodiments are for illustrative purposes only and are not intended to limit the scope of this disclosure. Various modifications will be contemplated and will obviously be made by those skilled in the art without departing from the spirit and scope of this disclosure.

Claims

1. A substrate for a power supply module, comprising: A heat-conducting base plate, comprising a first side and a second side opposite to the first side; as well as A dielectric material layer is disposed on the first side of the thermally conductive base plate, wherein The substrate has a first region, a second region, and a third region. The first region is used to carry the power devices of the power module, the second region is used to carry the controller of the power module, and the third region is not filled with electronic devices. The third region is located between the first region and the second region, and the thermally conductive base plate includes a first groove, the position of which corresponds to the position of the third region of the substrate.

2. The substrate according to claim 1, wherein the first groove opens from the first side of the thermally conductive base plate.

3. The substrate of claim 2, wherein the dielectric material layer comprises a first portion having a first thickness and a second portion having a second thickness greater than the first thickness, and wherein the dielectric material layer is accommodated in the first side.

4. The substrate of claim 2, wherein the dielectric material layer includes a stepped feature received by the first groove, wherein the stepped feature is disposed below the third region.

5. The substrate of claim 2, wherein the thermally conductive base plate further includes a second groove opening from the second side of the thermally conductive base plate, wherein the second groove is disposed below the third region.

6. The substrate of claim 5, wherein the thermally conductive base plate further comprises a third groove opening from the second side of the thermally conductive base plate, wherein the position of the third groove corresponds to the position of the first groove and the position of the second groove.

7. The substrate of claim 1, wherein the first groove opens from the second side of the thermally conductive base plate and is disposed below the third region.

8. The substrate of claim 7, wherein the thermally conductive base plate further comprises a third groove opening from the second side of the thermally conductive base plate, wherein the position of the third groove corresponds to the position of the first groove.

9. An integrated power supply module, comprising: The substrate includes: The heat-conducting base plate includes a first side and a second side opposite to the first side; and A dielectric material layer is disposed on the first side of the thermally conductive base plate; At least some power devices are arranged on a first region of the substrate; and At least one controller is disposed on the second region of the substrate. The third region of the substrate is located between the first region and the second region, and the third region is not filled with electronic devices; and wherein The thermally conductive base plate includes a first groove, the position of which corresponds to the position of the third region of the substrate.

10. The integrated power module of claim 9, wherein the power device and the at least one controller are supported by the same thermally conductive base plate.

11. The integrated power module according to claim 9, further comprising: A first set of pins is arranged around a first side of the substrate, and the power device is closer to the first set of pins than the at least one controller; as well as A second set of pins is arranged around a second side of the substrate, and the at least one controller is closer to the second set of pins than the power device, wherein the second side is opposite to the first side of the substrate, wherein the first set of pins is bonded to the substrate by solder material, and the second set of pins is not bonded to the substrate by solder material.

12. The integrated power module of claim 9, wherein the first groove opens from the first side of the thermally conductive base plate.

13. The integrated power module of claim 12, wherein the dielectric material layer comprises a first portion having a first thickness and a second portion having a second thickness greater than the first thickness, and wherein the dielectric material layer is accommodated in the first side.

14. The integrated power module of claim 12, wherein the dielectric material layer includes a stepped feature received by the first groove, wherein the stepped feature is disposed below the third region.

15. The integrated power module of claim 12, wherein the thermally conductive base plate further includes a second recess opening from the second side of the thermally conductive base plate, wherein the second recess is disposed below the third region.

16. The integrated power module of claim 15, wherein the thermally conductive base plate further includes the third groove opening from the second side of the thermally conductive base plate, wherein the position of the third groove corresponds to the position of the first groove and the position of the second groove.

17. The integrated power module of claim 9, wherein the first recess opens from the second side of the thermally conductive base plate and is disposed below the third region.

18. The integrated power module of claim 17, wherein the thermally conductive base plate further includes a third groove opening from the second side of the thermally conductive base plate, wherein the position of the third groove corresponds to the position of the first groove.

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