Preparation method of packaging substrate, packaging substrate and semiconductor packaging structure

Abstract

This application provides a method for preparing a packaging substrate, a packaging substrate, and a semiconductor packaging structure. The preparation method includes forming a through-hole structure on a preset substrate. The through-hole structure includes a first sub-hole and a second sub-hole, which are connected in the thickness direction of the preset substrate. The radial dimension of the first sub-hole is larger than that of the second sub-hole, and the axes of the first and second sub-holes coincide. A buffer material is filled into the through-hole structure to form an initial buffer structure. The initial buffer structure is etched on one side of the second sub-hole of the preset substrate to form a buffer structure. The buffer structure is located inside the first sub-hole, and in the same projection plane perpendicular to the thickness direction, the orthographic projection of the buffer structure is outside the orthographic projection of the second sub-hole.

Description

Technical Field

[0001] This application relates to the field of integrated circuit equipment technology, and in particular to a method for preparing a packaging substrate, the packaging substrate, and a semiconductor packaging structure. Background Technology

[0002] The integrated circuit (IC) packaging substrate, also known as the IC packaging PCB, is used directly to mount the integrated circuit. It not only provides support and protection for the IC but also enables the connection between the IC and the printed circuit board (PCB). In short, the packaging substrate is a core element that carries the integrated circuit and enables high-speed communication and effective heat dissipation between the IC and the outside world.

[0003] In existing glass substrate manufacturing processes, glass is prone to cracking and breakage, and the preparation of conductive pillars is difficult, resulting in a low yield of encapsulation substrates. Summary of the Invention

[0004] This application provides a method for preparing a packaging substrate, a packaging substrate, and a semiconductor packaging structure, aiming to improve the yield of the packaging substrate.

[0005] An embodiment of the first aspect of this application provides a method for preparing a packaging carrier, comprising: A through-hole structure is formed on a preset substrate. The through-hole structure includes a first sub-hole and a second sub-hole. The first sub-hole and the second sub-hole are connected in the thickness direction of the preset substrate. The radial dimension of the first sub-hole is larger than the radial dimension of the second sub-hole. The axes of the first sub-hole and the second sub-hole coincide. The through-hole structure is filled with buffer material to form the initial buffer structure; An initial buffer structure is etched on one side of the second sub-hole of the preset substrate to form a buffer structure. The buffer structure is located inside the first sub-hole, and in the same projection plane perpendicular to the thickness direction, the orthographic projection of the buffer structure is outside the orthographic projection of the second sub-hole.

[0006] In some embodiments, the step of forming a through-hole structure on a preset substrate includes: A laser modification process is performed on a first target region in a preset substrate, wherein the size of the first target region is equal to the thickness of the preset substrate in the thickness direction. The second target region in the preset substrate is subjected to laser modification treatment. In the thickness direction, the size of the second target region is smaller than the thickness of the preset substrate. In the direction parallel to the plane where the preset substrate is located, the size of the second target region is larger than the size of the first target region, and a part of the first target region coincides with the second target region. The preset substrate is etched, and the second target area is etched to form the first sub-hole, and a portion of the first target area is etched to form the second sub-hole. In some embodiments, the radial dimension of the first sub-hole is D1, and the radial dimension of the second sub-hole is D2, where D1 and D2 satisfy: 2mm≤D1-D2≤10mm; In some embodiments, the size of the first sub-hole is larger than the size of the second sub-hole in the thickness direction.

[0007] In some embodiments, after the step of laser modification of the first target region in the preset substrate and before the step of laser modification of the second target region in the preset substrate, the method further includes: Keep the laser equipment in a fixed position and adjust the laser equipment's irradiation parameters; In some embodiments, the irradiation parameters include at least one of the following: spot size, laser intensity, and irradiation duration.

[0008] In some embodiments, the step of keeping the position of the laser device fixed and adjusting the irradiation parameters of the laser device includes: increasing the spot size of the laser device during irradiation and decreasing the laser intensity of the laser device during irradiation.

[0009] In some embodiments, after the step of forming a through-hole structure on a preset substrate and before the step of filling the through-hole structure with a buffer material, the method further includes: A protective layer is formed on one side of the second sub-hole of a preset substrate. The preset substrate includes a first surface. The opening of the second sub-hole away from the first sub-hole is exposed relative to the first surface. The protective layer includes a first protective structure and a second protective structure connected together. The first protective structure is in contact with the sidewall of the second sub-hole, and the second protective structure is located on the first surface. In some embodiments, in the step of etching the initial state buffer structure on the side of the second sub-hole of the preset substrate, the initial state buffer structure is etched by photolithography or dry etching process. In some embodiments, the material of the protective layer includes a light-shielding material; In some embodiments, the material of the protective layer includes at least one of titanium and copper.

[0010] In some embodiments, after etching the initial buffer structure on one side of the second sub-hole of the preset substrate, the method further includes: Conductive material is filled into the first and second sub-holes to form a conductive structure, which covers the surface of a preset substrate in the thickness direction. Remove the portion of the structure covering the surface of the preset substrate in the conductive structure to form a conductive pillar; In some embodiments, the conductive structure includes a first conductive portion located in a first sub-hole and a second conductive portion located in a second sub-hole, wherein the first conductive portion and the second conductive portion have the same size in a direction parallel to the plane of the preset substrate. In some embodiments, after the step of etching the initial buffer structure on one side of the second sub-hole of the preset substrate, and before the step of filling the first and second sub-holes with conductive material, the method further includes: The preset substrate is thinned to remove the second sub-hole.

[0011] In some embodiments, the step of removing the portion of the conductive structure covering the surface of a predetermined substrate includes: The substrate is thinned to remove the second sub-hole; In some embodiments, after the step of forming a through-hole structure on a preset substrate and before the step of filling the through-hole structure with a buffer material, the method further includes: A protective layer is formed on one side of the second sub-hole of the preset substrate, and the protective layer is at least partially located inside the second sub-hole; The step of thinning the pre-defined substrate includes: Remove the protective layer.

[0012] In some embodiments, the step of forming a through-hole structure on a preset substrate includes: A second sub-hole is formed on the sacrificial layer, and the second sub-hole penetrates the sacrificial layer; The sacrificial layer and the substrate body are aligned and bonded along the thickness direction to form a preset substrate. In the same projection plane perpendicular to the thickness direction, the orthogonal projection of the substrate body covers the orthogonal projection of the second sub-hole. Align the laser device with the preset substrate at intervals along the thickness direction, and make the laser spot emitted by the laser device coincide with the second sub-hole; Adjust the irradiation parameters of the laser equipment and perform laser modification treatment on the substrate body; The substrate body is etched to form the first sub-hole.

[0013] Secondly, embodiments of this application provide a packaging carrier board, comprising: A substrate structure, wherein the substrate structure is provided with a first hole; The conductive post is at least partially located within the first hole; A buffer section is located inside the first hole and is arranged around the periphery of the conductive post. The thickness of the buffer section remains the same at different locations around the conductive post.

[0014] In some embodiments, the substrate structure further includes a second hole, which is connected to the first hole in the thickness direction of the substrate structure. The radial dimension of the first hole is larger than that of the second hole, and the conductive post portion is located inside the second hole. The packaging substrate also includes a protective portion located inside the second hole and surrounding the conductive post. The surface of the protective portion facing the conductive post is coplanar with the surface of the buffer portion facing the conductive post. In some embodiments, the orthographic projection of the protective portion is located within the orthographic projection of the buffer portion in the same projection plane perpendicular to the thickness direction.

[0015] Thirdly, embodiments of this application provide a semiconductor packaging structure, including a packaging substrate formed by the preparation method described in any of the foregoing embodiments, or a packaging substrate in any of the foregoing embodiments.

[0016] In the packaging carrier preparation method provided in this application embodiment, by forming a first sub-hole and a second sub-hole with different radial dimensions during the packaging carrier preparation process, and setting the two sub-holes coaxially, the thickness of the formed buffer structure at different positions on the periphery can be kept consistent. Thus, in the packaging carrier, different positions on the periphery of the conductive pillar can have buffer material of the same thickness, thereby ensuring that different positions on the periphery of the conductive pillar have an effective buffering effect. This reduces the risk of cracks caused by stress problems at local positions on the periphery of the conductive pillar, and improves the yield and structural reliability of the packaging carrier. Attached Figure Description

[0017] Other features, objects, and advantages of this application will become more apparent from the following detailed description of non-limiting embodiments with reference to the accompanying drawings, wherein the same or similar reference numerals denote the same or similar features.

[0018] Figure 1 This application provides a schematic flowchart of a method for preparing a packaging carrier. Figures 2a to 2c This is a process diagram illustrating the fabrication of a packaging carrier provided in an embodiment of this application; Figure 3 This is a schematic diagram of another method for preparing a packaging substrate provided in this application embodiment; Figure 4a and Figure 4b This is a process diagram illustrating the fabrication of another packaging substrate provided in this application embodiment; Figure 5 This is a schematic flowchart of another method for preparing a packaging substrate provided in an embodiment of this application; Figure 6 This is a schematic flowchart of another method for preparing a packaging substrate provided in an embodiment of this application; Figures 7a to 7c This is a diagram illustrating the fabrication process of another packaging substrate provided in an embodiment of this application; Figure 8 This is a schematic flowchart of another method for preparing a packaging substrate provided in an embodiment of this application; Figure 9a and Figure 9b This is a diagram illustrating the fabrication process of another packaging substrate provided in an embodiment of this application; Figure 10 This is a diagram illustrating the fabrication process of another packaging substrate provided in an embodiment of this application; Figure 11 This is a diagram illustrating the fabrication process of another packaging substrate provided in an embodiment of this application; Figure 12 This is a schematic flowchart of another method for preparing a packaging substrate provided in an embodiment of this application; Figures 13a to 13d This is a diagram illustrating the fabrication process of another packaging substrate provided in an embodiment of this application; Figure 14 This is a schematic diagram of the structure of a packaging carrier provided in an embodiment of this application; Figure 15 This is a schematic diagram of another packaging carrier provided in the embodiments of this application.

[0019] Explanation of reference numerals in the attached figures: 10. Pre-set substrate; 11. Through-hole structure; 111. First sub-hole; 112. Second sub-hole; 12. Substrate body; 13. Sacrificial layer; 14. Axis; 21. Initial-state buffer structure; 22. Buffer structure; 30. Protective layer; 31. First protective structure; 32. Second protective structure; 40. Conductive structure; 41. First conductive portion; 411. First conductive part; 412. Second conductive part; 42. Second conductive portion; 50. Substrate structure; 51. First hole; 52. Second hole; 60. Conductive pillar; 70. Buffer section; 80. Protection Department; 91. First routing layer; 92. Second routing layer; M1, First Surface; A1, First target area; A2, Second target area; Z, thickness direction. Detailed Implementation

[0020] The features and exemplary embodiments of various aspects of this application will now be described in detail. Numerous specific details are set forth in the following detailed description to provide a comprehensive understanding of this application. However, it will be apparent to those skilled in the art that this application can be implemented without requiring some of these specific details. The following description of embodiments is merely intended to provide a better understanding of this application by illustrating examples. In the accompanying drawings and the following description, at least some well-known structures and techniques are not shown to avoid unnecessarily obscuring the application; and, for clarity, the dimensions of some structures may be exaggerated. Furthermore, the features, structures, or characteristics described below can be combined in any suitable manner in one or more embodiments.

[0021] In the description of this application, it should be noted that, unless otherwise stated, "a plurality of" means two or more; the terms "upper," "lower," "left," "right," "inner," "outer," etc., indicating orientation or positional relationships are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation on this application. Furthermore, the terms "first," "second," etc., are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0022] The directional terms appearing in the following description refer to the directions shown in the figures and are not intended to limit the specific structure of the embodiments of this application. It should also be noted in the description of this application that, unless otherwise explicitly specified and limited, the terms "installation" and "connection" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a direct connection or an indirect connection. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.

[0023] Through-glass vias (TGVs) are structures that achieve electrical interconnection through holes in a glass substrate, similar to through-silicon vias (TSVs), and offer three-dimensional interconnect capabilities. During packaging, glass substrates can withstand higher temperatures better than organic substrates, and their coefficient of thermal expansion is similar to silicon, thus reducing stress warping problems caused by thermal mismatch. Furthermore, the higher flatness and lower roughness of the glass substrate surface allow for denser wiring. In addition, the lower dielectric constant and dielectric loss of glass substrates can improve signal transmission speed and signal integrity. Simultaneously, glass substrates exhibit excellent chemical stability, effectively resisting environmental corrosion such as moisture, acids, and alkalis. Therefore, they have broad application prospects in advanced packaging, integration of passive devices, and optoelectronic device integration.

[0024] During the fabrication of the encapsulation substrate, conductive pillars need to be formed within through-holes. However, glass itself is a brittle material. After filling the through-holes with metal, the difference in thermal expansion coefficients between glass and metal can easily lead to cracks due to stress. While filling the through-holes with a buffer material around the conductive pillars can mitigate this cracking problem to some extent, conventional fabrication processes cannot guarantee a consistent thickness of the buffer material at different locations around the conductive pillars. This results in some areas having a thinner buffer material, which is insufficient to effectively buffer stress deformation, thus easily leading to localized cracks around the conductive pillars due to stress.

[0025] Regarding the above issues, firstly, please refer to [link / reference needed]. Figure 1 , Figures 2a to 2c This application provides a method for preparing a packaging carrier, the method comprising: S100: A through-hole structure 11 is formed on a preset substrate 10.

[0026] like Figure 2a As shown, in step S100, the preset substrate 10 is used to subsequently prepare the substrate structure 50 in the encapsulation carrier. The preset substrate 10 and the substrate structure 50 may have the same thickness, or the thickness of the preset substrate 10 may be less than the thickness of the substrate structure 50. That is, depending on the needs, the preset substrate 10 may be thinned in subsequent steps, or the preset substrate 10 may not be thinned.

[0027] The through-hole structure 11 is disposed through the preset substrate 10 in the thickness direction Z. In related technologies, through holes in the packaging carrier board manufacturing process are often of equal diameter, that is, the radial dimension of the through hole is consistent at all positions. However, the embodiment of this application is different. The through-hole structure 11 formed in the packaging carrier board manufacturing process is not of equal diameter, but includes a first sub-hole 111 and a second sub-hole 112 with different radial dimensions. The radial dimension of the first sub-hole 111 is larger than the radial dimension of the second sub-hole 112.

[0028] It should be noted that the first sub-hole 111 can be a circular hole, a square hole, or other shapes. The radial dimension of the first sub-hole 111 is its dimension in the direction parallel to the plane of the preset substrate 10, and does not constitute a limitation on the shape of the first sub-hole 111. Furthermore, when the first sub-hole 111 is a circular hole, its radial dimension is its diameter. Similarly, the radial dimension of the second sub-hole 112 is the same, and will not be repeated in this embodiment. For ease of understanding, this application will subsequently use the example of both the first sub-hole 111 and the second sub-hole 112 being circular holes.

[0029] The first sub-hole 111 and the second sub-hole 112 are connected in the thickness direction Z of the preset substrate 10. The preset substrate 10 has two opposing surfaces in its own thickness direction Z. The first sub-hole 111 is exposed on one of the surfaces with its end facing away from the second sub-hole 112, and the second sub-hole 112 is exposed on the other surface with its end facing away from the first sub-hole 111.

[0030] Furthermore, the axes 14 of the first sub-hole 111 and the second sub-hole 112 coincide. The axis 14 of the first sub-hole 111 refers to an ideal straight line passing through the center of the first sub-hole 111 and parallel to the thickness direction Z. The axis 14 of the second sub-hole 112 refers to an ideal straight line passing through the center of the second sub-hole 112 and parallel to the thickness direction Z. The coincidence of the axes 14 of the two indicates that the relative positions between the centers of the first sub-hole 111 and the second sub-hole 112 are matched.

[0031] S110: Fill the through-hole structure 11 with cushioning material.

[0032] Please see Figure 2b In step S110, a buffer structure 21 is formed by filling the through-hole structure 11 with buffer material. The initial buffer structure 21 includes a first buffer sub-section located in the first sub-hole 111 and a second buffer sub-section located in the second sub-hole 112.

[0033] Since the first sub-hole 111 and the second sub-hole 112 have different radial dimensions and are arranged on the same axis, the orthographic projection of the first buffer sub-part covers and exceeds the orthographic projection of the second buffer sub-part in the same projection plane perpendicular to the thickness direction Z, and the orthographic projection center of the first buffer sub-part coincides with the orthographic projection center of the second buffer sub-part.

[0034] S120: Etch the initial state buffer structure 21 on one side of the second sub-hole 112 of the preset substrate 10.

[0035] Please see Figure 2c In step S120, the initial state buffer structure 21 is etched to form a buffer structure 22. The buffer structure 22 is located inside the first sub-hole 111, and in the same projection plane perpendicular to the thickness direction Z, the orthographic projection of the buffer structure 22 is located outside the orthographic projection of the second sub-hole 112.

[0036] Specifically, during the transformation of the initial buffer structure 21 into the buffer structure 22, the second buffer sub-part is etched away, and the portion of the first buffer sub-part corresponding to the second buffer sub-part is also etched away. The portion of the first buffer sub-part not corresponding to the second buffer sub-part is retained, forming the buffer structure 22. Furthermore, in the projection plane perpendicular to the thickness direction Z, the orthographic projection of the buffer structure 22 is an annular structure. Further, since the orthographic projection center of the first buffer sub-part coincides with the orthographic projection center of the second buffer sub-part, the thickness W of the buffer structure 22 can remain consistent at different peripheral positions.

[0037] It should be noted that the buffer structure 22 is used in the subsequent fabrication of the buffer portion 70 in the encapsulation carrier. In the thickness direction Z, the buffer structure 22 and the buffer portion 70 may have the same thickness, or the size of the buffer portion 70 may be smaller than the size of the buffer structure 22. That is, in subsequent steps, the buffer structure 22 may be further processed, or it may not be processed at all; this embodiment does not impose any limitations on this.

[0038] In summary, in this embodiment of the application, by forming a first sub-hole 111 and a second sub-hole 112 with different radial dimensions during the preparation of the encapsulation carrier, and by setting the two sub-holes coaxially, the thickness of the formed buffer structure 22 at different positions on the periphery can be kept consistent. Consequently, within the encapsulation carrier, different positions on the periphery of the conductive post 60 can have buffer material of the same thickness, thereby ensuring that different positions on the periphery of the conductive post 60 have an effective buffering effect. This reduces the risk of cracks caused by stress at local positions on the periphery of the conductive post 60, and improves the yield and structural reliability of the encapsulation carrier.

[0039] In some embodiments, please refer to Figure 3 , Figure 4a and Figure 4b In step S100, the following is included: S101: Perform laser modification treatment on the first target region A1 in the preset substrate 10.

[0040] like Figure 4aAs shown, in step S101, the first target region A1 is configured correspondingly to the second sub-hole 112 and the portion of the first sub-hole 111 corresponding to the second sub-hole 112. In the thickness direction Z, the size of the first target region A1 is equal to the thickness of the preset substrate 10. Furthermore, in the same projection plane perpendicular to the thickness direction Z, the orthographic shape of the first target region A1 is consistent with the orthographic shape of the second sub-hole 112 in subsequent steps, and the positional relationship between the orthographic projection of the first target region A1 and the orthographic projection of the preset substrate 10 is consistent with the positional relationship between the orthographic projection of the second sub-hole 112 and the orthographic projection of the preset substrate 10.

[0041] Laser modification involves scanning a target area with a laser beam to modify the material in that area. In this step, a laser is used to scan the material of the first target area A1. The laser penetrates the preset substrate 10 along the thickness direction Z. The energy of the laser interacts with the preset substrate 10, causing changes in the physical or chemical properties of the first target area A1, thereby achieving modification of the material in that area.

[0042] S102: Perform laser modification treatment on the second target region A2 in the preset substrate 10.

[0043] In step S102, the second target region A2 is only corresponding to the first sub-hole 111. Furthermore, in the thickness direction Z, the size of the second target region A2 is the same as the size of the first sub-hole 111, and the radial dimension of the first sub-hole 111 is the same as the size of the second target region A2 in the direction parallel to the plane of the preset substrate 10. Therefore, in the thickness direction Z, the size of the second target region A2 is smaller than the thickness of the preset substrate 10, and in the direction parallel to the plane of the preset substrate 10, the size of the second target region A2 is larger than the size of the first target region A1, and a portion of the first target region A1 coincides with the second target region A2.

[0044] In this step, a laser is used to scan the material of the second target region A2. Unlike step S101, the laser does not completely penetrate the preset substrate 10 along the thickness direction Z. The laser only affects part of the structure of the preset substrate 10 in the thickness direction Z, causing changes in the physical or chemical properties of the second target region A2, thereby achieving modification of the material in that part.

[0045] It should be noted that, depending on the needs, the order of steps S101 and S102 can be reversed, that is, step S102 can be executed first, and then step S101 can be executed. This application embodiment does not limit this.

[0046] S103: Etch the preset substrate 10.

[0047] Combination Figure 2a As shown, in step S103, the second target region A2 is etched to form the first sub-hole 111, and a portion of the first target region A1 is etched to form the second sub-hole 112. Optionally, the first sub-hole 111 and the second sub-hole 112 can be formed by wet etching, that is, the embodiments of this application can use laser-induced wet etching to form the through-hole structure 11.

[0048] It should be noted that a single operation of steps S101 to S102 can modify the area where one through-hole structure 11 is located. Considering that multiple through-hole structures 11 are often required, in some optional embodiments, steps S101 and S102 can be repeated multiple times before step S103. After multiple through-hole structures 11 are modified, step S103 can etch multiple through-hole structures 11 together to form multiple through-hole structures 11, thereby simplifying the processing steps.

[0049] In this embodiment, different regions of the preset substrate 10 are modified by laser irradiation, and then an etching process is used to form a through-hole structure 11, so that the first sub-hole 111 and the second sub-hole 112 can be formed together in the same etching process. Compared with the scheme of separately preparing the first sub-hole 111 and the second sub-hole 112, this design can simplify the manufacturing process and improve the accuracy of the relative position of the first sub-hole 111 and the second sub-hole 112, thereby reducing the difficulty of coaxial preparation of the first sub-hole 111 and the second sub-hole 112.

[0050] In some embodiments, such as Figure 2a As shown, the radial dimension of the first sub-hole 111 is D1, and the radial dimension of the second sub-hole 112 is D2. D1 and D2 satisfy: 2mm ≤ D1 - D2 ≤ 10mm. Optionally, the value of D1 - D2 is one of 2mm, 4mm, 5mm, 8mm, and 10mm.

[0051] As can be seen from the attached diagram, the thickness of the buffer structure 22 is the radius difference between the first sub-hole 111 and the second sub-hole 112, which is equal to (D1-D2) / 2. The thickness of the buffer structure 22 is often the same as or close to the thickness of the buffer in the packaging substrate. Based on this, by controlling the values ​​of D1-D2 to conform to the above inequality, the thickness of the buffer portion 70 can be maintained between 1mm and 5mm.

[0052] In summary, by setting D1-D2 to be no less than 2mm, the thickness of the buffer portion 70 is indirectly controlled, thereby improving the buffering performance around the conductive post 60 and mitigating cracking issues. Simultaneously, by setting D1-D2 to be no greater than 10mm, the thickness of the buffer portion 70 is indirectly controlled to prevent it from becoming excessive, thus reducing the size occupied by the buffer portion 70 and improving the performance of the encapsulation substrate.

[0053] In some embodiments, the size of the first sub-hole 111 is larger than the size of the second sub-hole 112 in the thickness direction Z.

[0054] In this embodiment, the second sub-hole 112 is provided to help enhance the thickness uniformity of the buffer portion 70. However, considering that the provision of the second sub-hole 112 will additionally increase the size of the preset substrate 10, the depth of the first sub-hole 111 is set to be greater than the depth of the second sub-hole 112, thereby reducing the thickness of the preset substrate 10 and reducing the manufacturing cost.

[0055] In some embodiments, please refer to Figure 5 After step S101 and before step S102, the following is also included: S104: Keep the laser equipment in a fixed position and adjust the laser equipment's irradiation parameters.

[0056] Due to the high focus and adjustability of lasers, it can be ensured that only the target area is affected and no damage is caused to non-target areas. Based on this, the area affected by the laser beam can be changed by adjusting the irradiation parameters of the laser equipment, thereby meeting the modification needs of two target areas of different sizes.

[0057] Therefore, in this embodiment, only the irradiation parameters of the laser device need to be adjusted, not its position. In other words, the laser device remains in the same position when modifying the first target region A1 and the second target region A2. This ensures that the orthographic projection center of the first target region A1 coincides with the orthographic projection center of the second target region A2 on the same projection plane perpendicular to the thickness direction Z, thereby achieving coaxial alignment of the first sub-hole 111 and the second sub-hole 112. Consequently, different positions around the conductive post 60 within the packaging substrate can have buffer material of the same thickness, improving the yield and structural reliability of the packaging substrate.

[0058] It should be noted that the irradiation parameters can include a variety of parameters. Optionally, the irradiation parameters include at least one of the following: spot size, laser intensity, and irradiation duration.

[0059] In some optional embodiments, step S140 includes: increasing the size of the laser spot during laser irradiation and decreasing the laser intensity during laser irradiation. Here, the laser spot refers to the bright area formed when the laser beam irradiates the surface of the preset substrate 10.

[0060] In this embodiment, by increasing the spot size, the orthographic projection of the second target region A2 can cover and exceed the orthographic projection of the first target region A1 within the same projection plane perpendicular to the thickness direction Z. Conversely, by reducing the laser intensity, the second target region A2 can no longer completely penetrate the preset substrate 10, thereby making the size of the first target region A1 larger than the size of the second target region A2 in the thickness direction Z.

[0061] In some embodiments, please refer to Figure 6 , Figures 7a to 7c After step S100 and before step S110, the method further includes: S130: A protective layer 30 is formed on one side of the second sub-hole 112 of the preset substrate 10.

[0062] like Figure 7a As shown, in step S130, the preset substrate 10 includes a first surface M1, and the second sub-hole 112 has an opening on the side away from the first sub-hole 111 that is exposed relative to the first surface M1. The protective layer 30 includes a first protective structure 31 and a second protective structure 32 connected together. The first protective structure 31 is in contact with the sidewall of the second sub-hole 112, and the second protective structure 32 is located on the first surface M1.

[0063] The protective layer 30 is formed from one side of the second sub-hole 112. Optionally, the protective layer 30 can be formed by a sputtering process. The first protective structure 31 is the portion of the protective layer 30 that falls into the through-hole structure 11, while the second protective structure 32 is the portion of the protective layer 30 that falls on the first surface M1. Since the orthographic projection of the first sub-hole 111 covers and extends beyond the orthographic projection of the second sub-hole 112 in the same projection plane perpendicular to the thickness direction Z, an undercut structure can be formed at the junction of the first sub-hole 111 and the second sub-hole 112. The presence of the undercut structure makes it difficult for material to be sputtered onto the sidewall of the first sub-hole 111, so the first protective structure 31 only contacts the sidewall of the second sub-hole 112.

[0064] In this embodiment, the protective layer 30 is formed before the initial buffer structure 21, and within the same projection plane perpendicular to the thickness direction Z, the orthographic projection portion of the initial buffer structure 21 lies within the orthographic projection of the protective layer 30, and the portion lies outside the orthographic projection of the protective layer 30. Therefore, as Figure 7b and Figure 7cAs shown, during the etching of the initial buffer structure 21, the protective layer 30 can shield and protect a portion of the structure within the initial buffer structure 21, while other parts of the structure are exposed relative to the protective layer 30. In other words, the protective layer 30 can function as a mask. This allows part of the initial buffer structure 21 to be etched, while the remaining portion is preserved to form the buffer structure 22. Optionally, the surface of the first protective structure 31 away from the sidewall of the second sub-hole 112 is coplanar with the surface of the buffer structure 22 away from the sidewall of the first sub-hole 111.

[0065] It should be noted that in the final packaged substrate, all or part of the structure in the protective layer 30 may be retained, or the packaged substrate may not include any structure in the protective layer 30 at all. That is, in subsequent steps, the protective layer 30 may be completely or partially retained, or it may be completely removed. This application embodiment does not limit this.

[0066] In some alternative embodiments, in step S120, the initial state buffer structure 21 is etched by photolithography or dry etching.

[0067] In this embodiment, the protective layer 30 can protect a portion of the initial buffer structure 21 during photolithography and dry etching processes to form the buffer structure 22. Further optionally, when the initial buffer structure 21 is etched using photolithography, the material of the protective layer 30 can include a light-shielding material.

[0068] In some alternative embodiments, the material of the protective layer 30 includes at least one of titanium and copper.

[0069] In this embodiment of the application, in addition to assisting in the etching process of the initial buffer structure 21 in step S120, the protective layer 30 can also make the protective layer 30 conductively connected to the conductive pillar 60 when at least part of the structure in the protective layer 30 is retained in the final package carrier, thereby improving the reliability of the package carrier.

[0070] In some embodiments, please refer to Figure 8 , Figure 9a and Figure 9b After step S120, the following steps are also included: S140: The first sub-hole 111 and the second sub-hole 112 are filled with conductive material.

[0071] like Figure 9aAs shown, in step S140, a conductive structure 40 is formed by filling the first sub-hole 111 and the second sub-hole 112 with conductive material. The conductive structure 40 covers the surface of the preset substrate 10 in the thickness direction Z. Optionally, the conductive structure 40 can be formed by electroplating. The material of the conductive structure 40 may include at least one of copper, aluminum, nickel, gold, tin, and silver.

[0072] The conductive structure 40 is used to subsequently form the conductive pillar 60, and the conductive structure 40 includes a first conductive portion 41 located in the through hole structure 11 and a second conductive portion 42 covering the surface of the preset substrate 10. The two ends of the first conductive portion 41 in the thickness direction Z are respectively connected to the two second conductive portions 42.

[0073] S150: Remove part of the structure in the conductive structure 40 that covers the surface of the preset substrate 10.

[0074] like Figure 9b As shown, in step S150, a conductive pillar 60 is formed by removing a portion of the structure covering the surface of the preset substrate 10 in the conductive structure 40. In other words, the final package carrier does not include the second conductive portion 42 in the conductive structure 40. In this step, the first conductive portion 41 can be completely retained, or it can be partially removed. That is, the final package carrier may include the complete first conductive portion 41, or it may only include a portion of the structure in the first conductive portion 41.

[0075] It should be noted that in this step, only the part of the conductive structure 40 located on the substrate surface can be removed, or in addition to removing the part of the conductive structure 40 located on the substrate surface, the preset substrate 10 can also be thinned to reduce the size of the through hole structure 11 and the residual part in the conductive structure 40 in the thickness direction Z.

[0076] In some alternative embodiments, after step S120 and before step S140, the method further includes: S160: A seed layer (not shown in the figure) is formed on the sidewall of the through-hole structure 11 and on the surface of the preset substrate 10.

[0077] In step S160, the seed layer facilitates the electroplating process for fabricating the conductive structure 40 in subsequent steps, ensuring sufficient thickness of the conductive structure 40 to guarantee the smooth progress of the electroplating process. Furthermore, the seed layer and the portion of the conductive structure 40 located within the through-hole structure 11 can be used together to form the conductive pillar 60. Optionally, the seed layer can be made of a metallic material, such as a titanium-copper composite metal. Methods for preparing the seed layer include, but are not limited to, physical vapor deposition (PVD), evaporation, and electroless plating.

[0078] In some embodiments, such as Figure 9a As shown, the conductive structure 40 includes a first conductive portion 411 located in the first sub-hole 111 and a second conductive portion 412 located in the second sub-hole 112. In the direction parallel to the plane of the preset substrate 10, the first conductive portion 411 and the second conductive portion 412 have the same size.

[0079] The first conductive portion 411 and the second conductive portion 412 are two parts disposed in different sub-holes within the first conductive portion 41. As can be seen from the accompanying drawings, the first conductive portion 411 is correspondingly disposed with the buffer structure 22, and the second conductive portion 412 is correspondingly disposed with the first protective structure 31. Furthermore, since the surface of the first protective structure 31 facing the second conductive portion 412 is coplanar with the surface of the buffer structure 22 facing the first conductive portion 411, the first conductive portion 411 and the second conductive portion 412 can have the same size in a direction parallel to the plane of the preset substrate 10.

[0080] In some embodiments, please refer to Figure 10 After step S120 and before step S140, the method further includes: S170: Thinning process is performed on the preset substrate 10.

[0081] In step S170, the second sub-hole 112 is removed by thinning the preset substrate 10, and the protective layer 30 is also removed, so that the protective layer 30 and the second conductive part 412 are not present in the final package carrier.

[0082] In this embodiment, by removing the second sub-hole 112, the thickness of the preset substrate 10 is reduced, which is beneficial for thin and light designs. Furthermore, this design ensures that the conductive pillars 60 in the final package substrate have buffer material around their periphery at each position in the thickness direction Z, thereby further reducing the risk of cracking and improving the yield and reliability of the package substrate.

[0083] In some embodiments, please refer to Figure 11 Step S150 includes: S151: Thinning process is performed on the preset substrate 10.

[0084] like Figure 11 As shown, in step S151, the second sub-hole 112 is removed by thinning the preset substrate 10. As a result, the protective layer 30 and the second conductive part 412 are also removed, so that the protective layer 30 and the second conductive part 412 are not present in the final package carrier.

[0085] In this embodiment, by removing the second sub-hole 112, the thickness of the preset substrate 10 is reduced, which is beneficial for thin and light designs. Furthermore, this design ensures that the conductive pillars 60 in the final package substrate have buffer material around their periphery at each position in the thickness direction Z, thereby further reducing the risk of cracking and improving the yield and reliability of the package substrate.

[0086] Furthermore, the thinning process of the preset substrate 10 is performed after the electroplating and filling of the conductive material. This allows for the removal of the portion of the structure covering the surface of the preset substrate 10 in the conductive structure 40 and the thinning of the preset substrate 10 in the same removal process, thereby simplifying the fabrication process and improving fabrication efficiency. Optionally, the removal of the portion of the structure covering the surface of the preset substrate 10 in the conductive structure 40 and the thinning process of the preset substrate 10 can be achieved by grinding.

[0087] It should be noted that in this step, the size of the first sub-hole 111 in the thickness direction Z can be reduced at the same time, so as to further thin the preset substrate 10, or the part of the preset substrate 10 at the first sub-hole 111 can be not thinned. This application embodiment does not limit this.

[0088] In some embodiments, step S151 includes: removing the protective layer 30.

[0089] In this embodiment, while thinning the pre-defined substrate 10, the protective layer 30 can also be removed along with the second conductive portion 412. This results in the final package carrier board lacking the protective layer 30, thereby improving the reliability of the package carrier board. Furthermore, this design eliminates the need for an additional process to remove the protective layer 30, simplifying the manufacturing process and improving efficiency.

[0090] In some embodiments, please refer to Figure 12 , Figures 13a to 13d Step S100 includes: S105: A second sub-hole 112 is formed on the sacrificial layer 13.

[0091] like Figure 13aAs shown, in step S105, the sacrificial layer 13 is used to subsequently form a preset substrate 10 together with the substrate body 12, and the second sub-hole 112 is disposed through the sacrificial layer 13 along the thickness direction Z. The sacrificial layer 13 may include other materials different from glass.

[0092] S106: Align and bond the sacrificial layer 13 with the substrate body 12 along the thickness direction Z.

[0093] like Figure 13b As shown, in step S106, a preset substrate 10 is formed by aligning and bonding the sacrificial layer 13 with the substrate body 12. In other words, the thickness of the preset substrate 10 is the sum of the thicknesses of the sacrificial layer 13 and the substrate body 12. In the same projection plane perpendicular to the thickness direction Z, the orthographic projection of the substrate body 12 covers the orthographic projection of the second sub-hole 112.

[0094] S107: Align the laser device with the preset substrate 10 at a distance along the thickness direction Z, and make the laser spot emitted by the laser device coincide with the second sub-hole 112.

[0095] In step S107, the laser device can first output a laser spot with the same radial size as the second sub-hole 112. Then, with the assistance of the optical device, the relative position between the laser device and the preset substrate 10 is moved until the laser spot coincides with the second sub-hole 112. At this time, the laser device and the preset substrate 10 are aligned.

[0096] S108: Adjust the irradiation parameters of the laser equipment and perform laser modification treatment on the substrate body 12.

[0097] like Figure 13c As shown, in step S108, the laser device remains in a fixed position, so that the center of the laser spot during irradiation always coincides with the center of the second sub-hole 112. Based on this, the size of the laser spot during irradiation can be increased so that the modified area on the substrate body 12 corresponds and matches the first sub-hole 111.

[0098] It should be noted that the laser-modified areas on the substrate 12 will be etched away in subsequent steps. However, for the sacrificial layer 13, since it can be made of a material different from glass, even if the laser irradiates it, the irradiated portion of the structure within the sacrificial layer 13 may not undergo significant chemical changes. Consequently, the irradiated portion of the structure within the sacrificial layer 13 will not be removed in the subsequent etching steps. Therefore, in step S108, the irradiation intensity of the laser device can be kept unchanged, allowing the laser to irradiate into the sacrificial layer 13.

[0099] S109: Etching process is performed on the substrate body 12.

[0100] like Figure 13d As shown, in step S109, the first sub-hole 111 is formed by etching the substrate body 12.

[0101] In this embodiment, the first sub-hole 111 and the second sub-hole 112 can also be coaxially arranged through the above-described preparation method. This allows for the presence of buffer material of the same thickness at different locations around the conductive post 60 within the packaging substrate, improving the yield and structural reliability of the packaging substrate. Furthermore, to ensure that buffer material is provided around the conductive post 60 at all locations along the thickness direction Z, the sacrificial layer 13 can be peeled from the substrate body 12 in subsequent steps. This allows for the thinning of the pre-defined substrate 10 without damaging the glass material.

[0102] Secondly, please refer to Figure 14 This application provides a packaging carrier board, which includes a substrate structure 50, conductive pillars 60, and a buffer portion 70. The substrate structure 50 has a first hole 51, and the conductive pillars 60 are at least partially located within the first hole 51. The buffer portion 70 is located within the first hole 51 and is disposed around the periphery of the conductive pillars 60. The thickness of the buffer portion 70 remains the same at different positions around the conductive pillars 60.

[0103] The packaging substrate provided in this application embodiment can be prepared by the aforementioned preparation method, wherein the substrate structure 50 can be formed by the aforementioned preset substrate 10, the conductive pillar 60 can be formed by the aforementioned conductive structure 40, and the buffer portion 70 can be formed by the aforementioned buffer structure 22.

[0104] It should be noted that the first hole 51 in the embodiments of this application can be formed by the aforementioned first sub-hole 111. On this basis, the first hole 51 and the first sub-hole 111 can have the same depth dimension, or the size of the first hole 51 in the thickness direction Z can be smaller than the size of the first sub-hole 111. The embodiments of this application do not impose any restrictions.

[0105] In addition to the above structure, the packaging substrate may also include a first wiring layer 91 and a second wiring layer 92, which are disposed on both sides of the substrate structure 50.

[0106] In this embodiment, the preparation method of the encapsulation substrate has been adjusted so that different positions around the conductive post 60 can have buffer material of the same thickness. This ensures that different positions around the conductive post 60 have an effective buffering effect, thereby reducing the risk of cracks caused by stress in local positions around the conductive post 60 and improving the yield and structural reliability of the encapsulation substrate.

[0107] In some embodiments, please refer to Figure 15 The substrate structure 50 also includes a second hole 52, which is connected to the first hole 51 in the thickness direction Z of the substrate structure 50. The radial dimension of the first hole 51 is larger than the radial dimension of the second hole 52. The conductive post 60 is partially located within the second hole 52. The packaging carrier also includes a protective portion 80, which is located within the second hole 52 and surrounds the peripheral side of the conductive post 60. The surface of the protective portion 80 facing the conductive post 60 is coplanar with the surface of the buffer portion 70 facing the conductive post 60.

[0108] The second hole 52 is formed by the aforementioned second sub-hole 112, and the protective part 80 is formed by the aforementioned protective layer 30. In this embodiment, the second hole 52 and the aforementioned second sub-hole 112 may have the same depth dimension, or the size of the second hole 52 may be smaller than the size of the second sub-hole 112 in the thickness direction Z. This embodiment does not impose any limitations.

[0109] In this embodiment, the encapsulation substrate may include a first hole 51 and a second hole 52 with different radial dimensions. The sidewall of the first hole 51 is provided with a buffer portion 70, while the sidewall of the second hole 52 is provided with a protective portion 80. Further, the buffer portion 70 and the protective portion 80 are coplanarly disposed on the surfaces facing the conductive post 60, so that the partial structures of the conductive post 60 at the first hole 51 and the second hole 52 can have the same radial dimension. Further optionally, in the same projection plane perpendicular to the thickness direction Z, the orthographic projection of the protective portion 80 is located within the orthographic projection of the buffer portion 70.

[0110] Thirdly, embodiments of this application also provide a semiconductor packaging structure, including a packaging substrate prepared by the method for preparing the packaging substrate provided in any of the above embodiments and a packaging substrate provided in any of the above embodiments.

[0111] Since the semiconductor packaging structure of this application embodiment includes the packaging substrate prepared by the packaging substrate preparation method provided in any of the above embodiments and the packaging substrate provided in any of the above embodiments, the beneficial effects of the chip structure of this application embodiment including the packaging substrate prepared by the packaging substrate preparation method provided in any of the above embodiments and the packaging substrate provided in any of the above embodiments will not be repeated in this application embodiment.

[0112] The semiconductor packaging structures in this application include, but are not limited to, devices with display functions such as mobile phones, personal digital assistants (PDAs), tablet computers, personal computers, desktop computers, e-books, televisions, access control systems, smart landline phones, and control consoles.

[0113] Although this application has been described with reference to preferred embodiments, various modifications can be made thereto and components can be replaced with equivalents without departing from the scope of this application. In particular, the technical features mentioned in the various embodiments can be combined in any manner, provided there is no structural conflict. This application is not limited to the specific embodiments disclosed herein, but includes all technical solutions falling within the scope of the claims.

Claims

1. A method for preparing a packaging carrier, characterized in that, include: A through-hole structure is formed on a preset substrate. The through-hole structure includes a first sub-hole and a second sub-hole. The first sub-hole and the second sub-hole are connected in the thickness direction of the preset substrate. The radial dimension of the first sub-hole is larger than the radial dimension of the second sub-hole. The axes of the first sub-hole and the second sub-hole coincide. The through-hole structure is filled with buffer material to form an initial buffer structure; The initial buffer structure is etched on one side of the second sub-hole of the preset substrate to form a buffer structure. The buffer structure is located inside the first sub-hole, and in the same projection plane perpendicular to the thickness direction, the orthographic projection of the buffer structure is located outside the orthographic projection of the second sub-hole.

2. The preparation method according to claim 1, characterized in that, The step of forming a through-hole structure on a preset substrate includes: A laser modification process is performed on a first target region in the preset substrate, wherein the size of the first target region is equal to the thickness of the preset substrate in the thickness direction; The second target region in the preset substrate is subjected to laser modification treatment. In the thickness direction, the size of the second target region is smaller than the thickness of the preset substrate. In the direction parallel to the plane where the preset substrate is located, the size of the second target region is larger than the size of the first target region, and a part of the first target region coincides with the second target region. The preset substrate is etched, and the second target area is etched to form a first sub-hole, and a portion of the first target area is etched to form a second sub-hole; Preferably, the radial dimension of the first sub-hole is D1, and the radial dimension of the second sub-hole is D2, wherein D1 and D2 satisfy: 2mm≤D1-D2≤10mm; Preferably, in the thickness direction, the size of the first sub-hole is larger than the size of the second sub-hole.

3. The preparation method according to claim 2, characterized in that, After the step of performing laser modification treatment on the first target area in the preset substrate, and before the step of performing laser modification treatment on the second target area in the preset substrate, the method further includes: Keep the position of the laser device fixed and adjust the irradiation parameters of the laser device; Preferably, the irradiation parameters include at least one of the following: spot size, laser intensity, and irradiation duration; Preferably, the step of keeping the position of the laser device fixed and adjusting the irradiation parameters of the laser device includes: increasing the spot size of the laser device during irradiation and decreasing the laser intensity of the laser device during irradiation.

4. The preparation method according to claim 1, characterized in that, After the step of forming a through-hole structure on the preset substrate, and before the step of filling the through-hole structure with a buffer material, the method further includes: A protective layer is formed on one side of the second sub-hole of the preset substrate. The preset substrate includes a first surface. The opening of the second sub-hole away from the first sub-hole is exposed relative to the first surface. The protective layer includes a first protective structure and a second protective structure connected together. The first protective structure is in contact with the sidewall of the second sub-hole, and the second protective structure is located on the first surface. Preferably, in the step of etching the initial state buffer structure on one side of the second sub-hole of the preset substrate, the initial state buffer structure is etched by photolithography or dry etching process; Preferably, the material of the protective layer includes a light-shielding material; Preferably, the material of the protective layer includes at least one of metallic titanium and metallic copper.

5. The preparation method according to claim 1, characterized in that, After the step of etching the initial buffer structure on one side of the second sub-hole of the preset substrate, the method further includes: Conductive material is filled into the first sub-hole and the second sub-hole to form a conductive structure, which covers the surface of the preset substrate in the thickness direction; Remove a portion of the structure covering the surface of the preset substrate from the conductive structure to form a conductive pillar; Preferably, the conductive structure includes a first conductive portion located in the first sub-hole and a second conductive portion located in the second sub-hole, wherein the first conductive portion and the second conductive portion have the same size in a direction parallel to the plane of the preset substrate; Preferably, after the step of etching the initial buffer structure on one side of the second sub-hole of the preset substrate, and before the step of filling the first sub-hole and the second sub-hole with conductive material, the method further includes: The preset substrate is thinned to remove the second sub-hole.

6. The preparation method according to claim 5, characterized in that, The step of removing the portion of the conductive structure covering the surface of the preset substrate includes: The preset substrate is thinned to remove the second sub-hole; Preferably, after the step of forming a through-hole structure on the preset substrate and before the step of filling the through-hole structure with a buffer material, the method further includes: A protective layer is formed on one side of the second sub-hole of the preset substrate, and the protective layer is at least partially located inside the second sub-hole; The step of thinning the preset substrate includes: Remove the protective layer.

7. The preparation method according to claim 1, characterized in that, The step of forming a through-hole structure on a preset substrate includes: A second sub-hole is formed on the sacrificial layer, and the second sub-hole penetrates the sacrificial layer; The sacrificial layer and the substrate body are aligned and bonded along the thickness direction to form the preset substrate. In the same projection plane perpendicular to the thickness direction, the orthographic projection of the substrate body covers the orthographic projection of the second sub-hole. Align the laser device with the preset substrate at intervals along the thickness direction, and make the laser spot emitted by the laser device coincide with the second sub-hole; Adjust the irradiation parameters of the laser device and perform laser modification treatment on the substrate body; The substrate body is etched to form the first sub-hole.

8. A packaging carrier board, characterized in that, include: A substrate structure, wherein the substrate structure is provided with a first hole; A conductive post, at least partially located within the first hole; A buffer section is located inside the first hole, and the buffer section is arranged around the periphery of the conductive post; The thickness of the buffer portion remains the same at different locations around the conductive post.

9. The packaging carrier board according to claim 8, characterized in that, The substrate structure further includes a second hole, which is connected to the first hole in the thickness direction of the substrate structure. The radial dimension of the first hole is larger than that of the second hole, and the conductive post portion is located inside the second hole. The encapsulation carrier also includes a protective portion located inside the second hole and surrounding the conductive post. The surface of the protective portion facing the conductive post is coplanar with the surface of the buffer portion facing the conductive post. Preferably, in the same projection plane perpendicular to the thickness direction, the orthographic projection of the protective part is located within the orthographic projection of the buffer part.

10. A semiconductor packaging structure, characterized in that, This includes the encapsulation substrate prepared by the preparation method according to any one of claims 1 to 7, or the encapsulation substrate according to claim 8 or 9.

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