Method for passivating arsenic pollution of tailings by modified biochar loaded nano zero-valent iron

CN122102352AActive Publication Date: 2026-05-29GUANGDONG UNIV OF TECH
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
GUANGDONG UNIV OF TECH
Filing Date
2026-04-28
Publication Date
2026-05-29

AI Technical Summary

Technical Problem

The rapid growth of the surface passivation layer in nano-zero-valent iron in tailings results in a short active window period, which cannot match the long-term release cycle of arsenic in tailings. Existing technologies cannot effectively solve this contradiction.

Method used

By real-time monitoring of the electrochemical impedance spectroscopy characteristics of the passivation layer, calculating the characteristic resonant frequency and minimum breakdown voltage, applying a sinusoidal AC voltage when the passivation layer grows to a specific thickness, constructing a conductive channel using dielectric breakdown, and stabilizing the channel through a DC reduction pulse, the in-situ activation of the passivation layer and the periodic recovery of material activity are achieved.

Benefits of technology

The active window of nano-zero-valent iron was extended to match the arsenic release cycle, improving the flexibility and efficiency of the remediation process and reducing energy consumption and the risk of secondary pollution.

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Abstract

The application discloses a method for passivating arsenic pollution of tailings by modified biochar loaded nano zero-valent iron, and the method comprises the following steps: collecting wide-frequency electrochemical impedance spectrum data and passivation layer thickness data in real time through an integrated micro three-electrode system, establishing an initial passivation layer resistance value benchmark, and extracting current passivation layer resistance value and capacitance value in real time to calculate characteristic resonance frequency and minimum breakdown voltage; when the current passivation layer resistance value exceeds the preset multiple of the benchmark value, the fluctuation amplitude of the characteristic resonance frequency is less than a preset fluctuation threshold value, and the passivation layer thickness is in a preset interval, a sinusoidal alternating voltage is applied at the characteristic resonance frequency, a conductive channel is formed in the passivation layer by dielectric breakdown, and then the channel is stabilized by a direct-current reduction pulse, so that in-situ activation of the passivation layer and periodic recovery of material activity are realized.
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