Tellurium-containing monomer, method for preparing the same, and application thereof, and photoresist resin and method for preparing the same

CN122102988APending Publication Date: 2026-05-29CHINA PETROLEUM & CHEMICAL CORP +1
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
CHINA PETROLEUM & CHEMICAL CORP
Filing Date
2024-11-27
Publication Date
2026-05-29

AI Technical Summary

Technical Problem

The uneven distribution of high EUV absorption elements in existing extreme ultraviolet photoresists affects patterning accuracy and lithography efficiency.

Method used

Tellurium-containing monomers and their preparation methods are used to synthesize tellurium-containing monomers through ring-opening and esterification reactions, and then introduce them into photoresist resins to form uniform photoresist resins.

Benefits of technology

It achieves effective absorption of extreme ultraviolet light and good uniformity, improves the sensitivity and resolution of photoresist, and ensures the accuracy and selectivity of patterning.

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Abstract

The application relates to the technical field of photoresists, and discloses a tellurium-containing monomer and a preparation method and application thereof, and a photoresist resin and a preparation method thereof. The tellurium-containing monomer provided by the application can effectively absorb extreme ultraviolet light, and the photoresist resin provided by the application is sensitive to EUV and has excellent uniformity.
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