Method, apparatus and system for detecting mobile ions

Abstract

The application discloses a mobile ion detection method, device and system, and belongs to the technical field of semiconductors. The method comprises the following steps: acquiring a plurality of volt-ampere characteristic curves corresponding to different voltage scanning frequencies of a to-be-detected semiconductor device, wherein each volt-ampere characteristic curve corresponds to one voltage scanning frequency; determining a target characteristic frequency of the to-be-detected semiconductor device based on the plurality of volt-ampere characteristic curves; and determining mobile ion species information of the to-be-detected semiconductor device based on the target characteristic frequency. The method can realize nondestructive detection of mobile ion species in the to-be-detected semiconductor device, and the testing and analysis process is simple.

Description

Technical Field

[0001] This application belongs to the field of semiconductor technology, and in particular relates to a method, apparatus and system for detecting mobile ions. Background Technology

[0002] Analysis of the types of mobile ions in semiconductor devices can provide a reference for the microscopic mechanisms of device performance improvement, which is of great significance for further improving device performance and long-term stability.

[0003] Currently, assessing the way ions migrate in semiconductor devices requires destructive testing of the semiconductor devices, making non-destructive testing impossible. Furthermore, the testing equipment is expensive and the analysis process is complex. Summary of the Invention

[0004] This application aims to address at least one of the technical problems existing in the prior art. To this end, this application proposes a method, apparatus, and system for detecting mobile ions, which can achieve non-destructive detection of mobile ion species, without the need for expensive testing equipment, and with a simple analysis process.

[0005] In a first aspect, this application provides a method for detecting mobile ions, which is used to detect the types of mobile ions in a semiconductor device. The method includes:

[0006] Acquire multiple current-voltage characteristic curves of the semiconductor device under test at different voltage scanning frequencies, with each current-voltage characteristic curve corresponding to a voltage scanning frequency;

[0007] Based on the multiple current-voltage characteristic curves, the target characteristic frequency of the semiconductor device under test is determined;

[0008] Based on the target characteristic frequency, the mobile ion species information of the semiconductor device under test is determined.

[0009] According to the mobile ion detection method of this application, by obtaining the current-voltage characteristic curves of the semiconductor device under test at different voltage scanning frequencies, the characteristic frequency of mobile ions is determined based on the current-voltage characteristic curves at different voltage scanning frequencies, thereby realizing non-destructive detection of the types of mobile ions in the semiconductor device under test. The testing and analysis process is simple.

[0010] According to one embodiment of this application, determining the target characteristic frequency of the semiconductor device under test based on the plurality of current-voltage characteristic curves includes:

[0011] Based on the multiple current-voltage characteristic curves, multiple reverse saturation current densities corresponding to the semiconductor device under test at different voltage scanning frequencies are determined, and each reverse saturation current density corresponds to one current-voltage characteristic curve.

[0012] The target characteristic frequency is determined based on the plurality of reverse saturation current densities.

[0013] According to one embodiment of this application, determining the target characteristic frequency based on the plurality of reverse saturation current densities includes:

[0014] Based on the multiple reverse saturation current densities, a target relationship curve between the reverse saturation current density and the voltage scanning frequency is constructed.

[0015] The target feature frequency is determined based on the peak value of the target relationship curve.

[0016] According to one embodiment of this application, the reverse saturation current density is obtained by fitting the negative voltage segment of the current-voltage characteristic curve.

[0017] According to one embodiment of this application, obtaining multiple current-voltage characteristic curves of the semiconductor device under test at different voltage scanning frequencies includes:

[0018] Obtain the multiple current-voltage characteristic curves corresponding to different voltage scanning frequencies within the first frequency range.

[0019] According to one embodiment of this application, the first frequency range is 10Hz to 20000Hz.

[0020] According to one embodiment of this application, the first frequency range is determined by the following steps:

[0021] Based on the mobile ion composition of the semiconductor device under test, the predicted types of mobile ions are determined;

[0022] The first frequency range is determined based on the characteristic frequencies corresponding to the estimated types of mobile ions.

[0023] According to one embodiment of this application, the characteristic frequency corresponding to the estimated mobile ion species is the center point of the first frequency range.

[0024] According to one embodiment of this application, the current-voltage characteristic curve is obtained through the following steps:

[0025] The semiconductor device under test is subjected to current-voltage characteristic testing within the scanning voltage range corresponding to the semiconductor device under test, and the current-voltage characteristic curve is obtained.

[0026] According to one embodiment of this application, the scanning voltage range is determined based on the bandgap of the semiconductor device under test.

[0027] Secondly, this application provides a mobile ion detection device for detecting the types of mobile ions in a semiconductor device, the device comprising:

[0028] The acquisition module is used to acquire multiple current-voltage characteristic curves of the semiconductor device under test at different voltage scanning frequencies, and each current-voltage characteristic curve corresponds to a voltage scanning frequency;

[0029] The first processing module is used to determine the target characteristic frequency of the semiconductor device under test based on the multiple current-voltage characteristic curves.

[0030] The second processing module is used to determine the type of mobile ions in the semiconductor device under test based on the target characteristic frequency.

[0031] According to the mobile ion detection device of this application, by acquiring the current-voltage characteristic curves of the semiconductor device under test at different voltage scanning frequencies, the characteristic frequency of mobile ions is determined based on the current-voltage characteristic curves at different voltage scanning frequencies, thereby realizing non-destructive detection of the types of mobile ions in the semiconductor device under test. The testing and analysis process is simple.

[0032] Thirdly, this application provides a mobile ion detection system, which includes:

[0033] A current-voltage characteristic testing device is used to connect to a semiconductor device under test (SD) to perform current-voltage characteristic testing on the SD to obtain the current-voltage characteristic curve of the SD.

[0034] The mobile ion detection device as described in the second aspect above is connected to the current-voltage characteristic testing device.

[0035] According to one embodiment of this application, the current-voltage characteristic testing device is used to adjust the voltage scanning speed to acquire multiple current-voltage characteristic curves corresponding to different voltage scanning frequencies.

[0036] Fourthly, this application provides an electronic device including a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor executes the computer program to implement the mobile ion detection method as described in the first aspect above.

[0037] Fifthly, this application provides a non-transitory computer-readable storage medium having a computer program stored thereon, which, when executed by a processor, implements the mobile ion detection method as described in the first aspect above.

[0038] In a sixth aspect, this application provides a computer program product, including a computer program that, when executed by a processor, implements the mobile ion detection method as described in the first aspect above.

[0039] Additional aspects and advantages of this application will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of this application. Attached Figure Description

[0040] The above and / or additional aspects and advantages of this application will become apparent and readily understood from the description of the embodiments taken in conjunction with the following drawings, in which:

[0041] Figure 1 This is one of the flowcharts illustrating the mobile ion detection method provided in the embodiments of this application;

[0042] Figure 2 This is a second schematic flowchart of the mobile ion detection method provided in the embodiments of this application;

[0043] Figure 3 This is a schematic diagram of the current-voltage characteristic curve of the semiconductor device under test provided in the embodiments of this application;

[0044] Figure 4 This is one of the schematic diagrams illustrating the relationship between voltage scanning frequency and reverse saturation current density provided in the embodiments of this application;

[0045] Figure 5 This is a schematic diagram showing the relationship between the voltage scanning interval and the reverse saturation current density provided in the embodiments of this application;

[0046] Figure 6 This is the second schematic diagram showing the relationship between voltage scanning frequency and reverse saturation current density provided in the embodiments of this application;

[0047] Figure 7 This is a schematic diagram of the structure of the mobile ion detection device provided in the embodiments of this application;

[0048] Figure 8 This is a schematic diagram of the mobile ion detection system provided in the embodiments of this application;

[0049] Figure 9 This is a schematic diagram of the structure of the electronic device provided in the embodiments of this application.

[0050] Figure label:

[0051] The mobile ion detection device 700, the acquisition module 710, the first processing module 720, the second processing module 730, the volt-ampere characteristic testing device 800, the signal collection device 810, and the active meter 820 are included. Detailed Implementation

[0052] The technical solutions of the embodiments of this application will be clearly described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this application. All other embodiments obtained by those skilled in the art based on the embodiments of this application are within the scope of protection of this application.

[0053] The terms "first," "second," etc., used in the specification and claims of this application are used to distinguish similar objects and not to describe a specific order or sequence. It should be understood that such use of data can be interchanged where appropriate so that embodiments of this application can be implemented in orders other than those illustrated or described herein, and the objects distinguished by "first," "second," etc., are generally of the same class and the number of objects is not limited; for example, a first object can be one or more. Furthermore, in the specification and claims, "and / or" indicates at least one of the connected objects, and the character " / " generally indicates that the preceding and following objects are in an "or" relationship.

[0054] This application provides a mobile ion detection method for detecting the types of mobile ions in a semiconductor device.

[0055] It should be noted that the semiconductor device in the embodiments of this application can be an electronic device with mobile ions, such as a perovskite solar cell, a light-emitting diode, a lithium-ion battery, a sodium-ion battery, etc.

[0056] Analysis of the types of mobile ions in semiconductor devices can provide a reference for the microscopic mechanisms of device performance improvement, which is of great significance for further improving device performance and long-term stability.

[0057] The following explanation uses perovskite solar cells as an example.

[0058] Perovskite solar cells are solar cells that use perovskite-type organometal halide semiconductors as light-absorbing materials. The perovskite photoactive layer is the core component of a perovskite solar cell, which is used to absorb the photon energy of sunlight, generate electron-hole pairs, and under the action of a built-in electric field, separate the electron-hole pairs into free electrons and holes, collect the electrons and holes respectively, and generate photocurrent.

[0059] The material of the perovskite photoactive layer is perovskite crystal, which can be of ABX3 structure, generally cubic or octahedral structure. A ion refers to organic cation, B ion refers to metal cation, and X ion is halide anion.

[0060] In the ABX3 structure, the A ion can be a formamidin molecule or ion (FA), a methylamine molecule or ion (MA), or a methylene diammonium ion (MDA). 2+ Organic cations such as FA, wherein the molecular formula of FA is NH2=CH-NH2 or NH2=CH-NH2. + The molecular formula of MA is CH3-NH2 or CH3-NH3. + MDA 2+ The molecular formula is + H3N-CH2-NH3 + .

[0061] In the ABX3 structure, the B ion can be a metal cation such as lead (Pb) or tin (Sn), and the X ion can be a halide anion such as chloride (Cl), bromine (Br), or iodine (I).

[0062] In actual applications of perovskite solar cells, a large number of ions migrate in the perovskite photoactive layer, which has a significant negative impact on the device efficiency and stability of perovskite solar cells.

[0063] Due to the induction of the built-in electric field, ions in perovskite crystals tend to accumulate at the edges of the perovskite photoactive layer, leading to a rapid deterioration in device efficiency. When ions move into the electron transport layer, they may change the energy level structure of the electron transport layer, affecting charge collection efficiency. The moving ions react with the metal back contact to form an insulating layer, which may also change the work function and affect charge collection efficiency. For the perovskite photoactive layer itself, ion movement can cause halide anions to lose electrons and easily convert into halogen elemental gases that volatilize.

[0064] Currently, equipment and methods, including time-of-flight secondary ion mass spectrometry, depth profiling X-ray electron spectroscopy, and electron beam induced current, are used to evaluate ion movement in semiconductor devices. However, these methods require destructive testing of semiconductor devices, making non-destructive testing impossible. Furthermore, they all require expensive testing equipment, and the testing and analysis processes are complex.

[0065] The mobile ion detection method provided in this application can avoid damage to semiconductor devices, determine the types of mobile ions in semiconductor devices using non-destructive testing, and does not require the use of equipment with complex and expensive testing principles. The testing and analysis process is simple.

[0066] The mobile ion detection method, mobile ion detection device 700, mobile ion detection system, electronic device and readable storage medium provided in this application will be described in detail below with reference to the accompanying drawings and through specific embodiments and application scenarios.

[0067] The mobile ion detection method provided in this application embodiment can be executed by an electronic device or a functional module or entity in an electronic device that can implement the mobile ion detection method.

[0068] like Figure 1 As shown, the mobile ion detection method includes steps 110, 120 and 130.

[0069] Step 110: Obtain multiple current-voltage characteristic curves of the semiconductor device under test at different voltage scanning frequencies.

[0070] Each current-voltage characteristic curve corresponds to a voltage scanning frequency.

[0071] In this step, the current-voltage characteristic test of the semiconductor device under test is performed to obtain the current-voltage characteristic curve of the semiconductor device under test. Multiple different voltage scanning frequencies are preset, and the current-voltage characteristic test of the semiconductor device under test is performed using a different voltage scanning frequency each time to obtain multiple current-voltage characteristic curves of the semiconductor device under test at different voltage scanning frequencies.

[0072] For example, preset voltage scanning frequencies include F1, F2, and F3. The current-voltage characteristic test of the semiconductor device under test is performed at voltage scanning frequency F1 to obtain the current-voltage characteristic curve corresponding to voltage scanning frequency F1; the current-voltage characteristic test of the semiconductor device under test is performed at voltage scanning frequency F2 to obtain the current-voltage characteristic curve corresponding to voltage scanning frequency F2; the current-voltage characteristic test of the semiconductor device under test is performed at voltage scanning frequency F3 to obtain the current-voltage characteristic curve corresponding to voltage scanning frequency F3.

[0073] Understandably, the volt-ampere characteristic test is used to study the relationship between current and voltage, obtain data on the relationship between current and voltage, and plot the volt-ampere characteristic curve. The horizontal axis of the volt-ampere characteristic curve can be voltage data, and the vertical axis can be current data.

[0074] In practice, the current-voltage characteristic curve can be obtained using the current-voltage characteristic test device 800, the current-voltage characteristic test of the semiconductor device under test can be performed using the active meter 820, and the current and voltage data can be collected using the signal collection device 810 to plot the current-voltage characteristic curve of the semiconductor device under test.

[0075] It should be noted that by adjusting the voltage scanning speed of the current-voltage characteristic testing device 800, the voltage scanning frequency during the current-voltage characteristic testing process can be changed, thereby enabling the current-voltage characteristic testing device 800 to acquire multiple current-voltage characteristic curves corresponding to different voltage scanning frequencies.

[0076] Step 120: Determine the target characteristic frequency of the semiconductor device under test based on multiple current-voltage characteristic curves.

[0077] It should be noted that the semiconductor device under test has PN junction characteristics, and the intrinsic characteristics of the device change accordingly as ions move within the semiconductor device under test.

[0078] In this embodiment, the current-voltage characteristic curve at a certain voltage scanning frequency can reflect the intrinsic characteristics of the semiconductor device under test at that voltage scanning frequency, and also reflect the migration characteristics of mobile ions in the semiconductor device under test at that voltage scanning frequency.

[0079] It should be noted that for a certain mobile ion in the semiconductor device under test, there exists a specific frequency at which the ion's migration rate is at its maximum. This specific frequency can be defined as the characteristic frequency of the ion.

[0080] In this embodiment, based on the current-voltage characteristic curves of the semiconductor device under test at different voltage scanning frequencies, the migration characteristics of mobile ions in the semiconductor device under test are analyzed to obtain the characteristic frequency corresponding to the mobile ions in the semiconductor device under test, i.e., the target characteristic frequency.

[0081] Step 130: Based on the target characteristic frequency, determine the mobile ion species information of the semiconductor device under test.

[0082] In this step, the types of mobile ions in the semiconductor device under test are determined based on the target characteristic frequency, and the information on the types of mobile ions in the semiconductor device under test is obtained.

[0083] For example, the perovskite photoactive layer of a certain perovskite solar cell is composed of FA. 0.92 MA 0.08 Based on the reverse saturation current density of the perovskite solar cell at different voltage scanning frequencies, the target characteristic frequency is 500 Hz. The characteristic frequency of I ions is also 500 Hz. Therefore, it can be determined that the mobile ions in the perovskite photoactive layer of the perovskite solar cell are I ions.

[0084] In this embodiment, by detecting the types of mobile ions in the perovskite photoactive layer using characteristic frequencies, it is possible to effectively distinguish halogen ions such as Cl, Br, and I in different perovskite solar cells, demonstrating strong universality.

[0085] It should be noted that by adjusting the detection precision, multiple target characteristic frequencies of perovskite solar cells can be determined, and the types of mobile ions in the perovskite photoactive layer can be comprehensively analyzed. For the ABX3 structure, the mobile A, B, and X ions in the perovskite photoactive layer can be analyzed.

[0086] In this embodiment, the current-voltage characteristic test is performed on the semiconductor device under test to obtain the current-voltage characteristic curves of the semiconductor device under test at different voltage scanning frequencies. By analyzing the current-voltage characteristic curves, the migration characteristics of mobile ions in the semiconductor device under test are obtained, the characteristic frequencies of mobile ions in the semiconductor device under test are found, and the types of mobile ions are determined. The current-voltage characteristic test does not damage the semiconductor device under test, the analysis process is simple, and it can be applied to the research and development of semiconductor devices under test and the performance testing of actual power plants, providing guidance for subsequent improvement of battery performance.

[0087] According to the mobile ion detection method provided in the embodiments of this application, by acquiring the current-voltage characteristic curves of the semiconductor device under test at different voltage scanning frequencies, the characteristic frequencies of mobile ions in the semiconductor device under test are determined based on the current-voltage characteristic curves at different voltage scanning frequencies, thereby realizing non-destructive detection of the types of mobile ions in the semiconductor device under test, and the testing and analysis process is simple.

[0088] In some embodiments, acquiring multiple current-voltage characteristic curves of the semiconductor device under test at different voltage scanning frequencies includes:

[0089] Obtain multiple current-voltage characteristic curves corresponding to different voltage scanning frequencies within the first frequency range.

[0090] In this embodiment, multiple different voltage scanning frequencies are selected within a first frequency range. Each time, a different voltage scanning frequency is used to perform an volt-ampere characteristic test on the semiconductor device under test, thereby obtaining multiple volt-ampere characteristic curves of the semiconductor device under test at different voltage scanning frequencies.

[0091] It should be noted that multiple different voltage scanning frequencies can be selected within the first frequency range, either uniformly or non-uniformly.

[0092] For example, the first frequency range is 10Hz to 1000Hz. Through non-uniform selection, 10Hz, 20Hz, 50Hz, 100Hz, 200Hz, 500Hz and 1000Hz are selected as voltage scanning frequencies for volt-ampere characteristic testing, and the difference between two adjacent voltage scanning frequencies is different.

[0093] For example, if the first frequency range is 450Hz to 550Hz, then by uniform selection, 450Hz, 460Hz, 470Hz, 480Hz, 490Hz, 500Hz, 510Hz, 520Hz, 530Hz, 540Hz and 550Hz are selected as the voltage scanning frequencies for the volt-ampere characteristic test, and the difference between two adjacent voltage scanning frequencies is the same.

[0094] In practice, the first frequency range can be a widely applicable preset frequency range, or it can be a frequency range set according to the characteristics of mobile ions in the semiconductor device under test.

[0095] In some embodiments, the first frequency range is 10 Hz to 20000 Hz.

[0096] In this embodiment, the frequency range of 10Hz to 20000Hz is a widely applicable preset frequency range. By selecting multiple different voltage scanning frequencies within the range of 10Hz to 20000Hz, the current-voltage characteristics of the semiconductor device under test can be tested. This method has strong universality and can detect the types of mobile ions in different semiconductor devices under test.

[0097] For example, the first frequency range is 10Hz to 1000Hz. The current-voltage characteristic test of the semiconductor device under test is performed at 10Hz, 20Hz, 50Hz, 100Hz, 200Hz, 500Hz, 1000Hz, 2000Hz, 5000Hz, 10000Hz and 20000Hz respectively, and the current-voltage characteristic curves corresponding to 10Hz, 20Hz, 50Hz, 100Hz, 200Hz, 500Hz, 1000Hz, 2000Hz, 5000Hz, 10000Hz and 20000Hz are obtained respectively.

[0098] In some embodiments, the first frequency range is determined by the following steps:

[0099] Based on the mobile ion composition of the semiconductor device under test, the predicted types of mobile ions are determined;

[0100] The first frequency range is determined based on the characteristic frequencies corresponding to the predicted types of mobile ions.

[0101] In this embodiment, based on the mobile ion composition in the semiconductor device under test, the ions that may move in the semiconductor device under test are estimated, and a first frequency range for the semiconductor device under test is set according to the characteristic frequencies corresponding to the estimated types of mobile ions.

[0102] For example, the perovskite photoactive layer of a certain perovskite solar cell is composed of FA. 0.92 MA 0.08 PbI3, the ions that are expected to migrate in the perovskite photoactive layer are I ions, and the characteristic frequency of I ions is 500Hz. Based on 500Hz, the target is set for FA composition. 0.92 MA 0.08 The first frequency range of the perovskite photoactive layer of PbI3.

[0103] Understandably, based on the characteristic frequency corresponding to the estimated mobile ion type, a first frequency range is determined. The characteristic frequency corresponding to the estimated mobile ion type is within the first frequency range. Multiple different voltage scanning frequencies are selected within the first frequency range to perform current-voltage characteristic tests on the semiconductor device under test. The target characteristic frequency of the semiconductor device under test is analyzed to verify whether the estimated mobile ion type is correct. This allows for the accurate detection of the mobile ion type information of the semiconductor device under test.

[0104] In practice, different first frequency ranges can be set for different ions that may move in the semiconductor device under test to verify whether the predicted types of moving ions are correct and to obtain information on the types of moving ions.

[0105] For example, the perovskite photoactive layer is a perovskite crystal with an ABX3 structure. The ions that may move include A ions, B ions, and X ions. A first frequency range is set for A ions, and multiple different voltage scanning frequencies are selected within this first frequency range to perform current-voltage characteristic tests on the perovskite solar cell to verify whether the moving ions in the perovskite photoactive layer include A ions.

[0106] A first frequency range is set for B ions, and multiple different voltage scanning frequencies are selected within this first frequency range to perform current-voltage characteristic tests on perovskite solar cells to verify whether the mobile ions in the perovskite photoactive layer include B ions.

[0107] A first frequency range is set for X ions, and multiple different voltage scanning frequencies are selected within this first frequency range to perform current-voltage characteristic tests on perovskite solar cells to verify whether the mobile ions in the perovskite photoactive layer include X ions.

[0108] In practice, characteristic frequencies corresponding to different ions in the perovskite photoactive layer can be collected to establish an ion characteristic frequency database, which facilitates the determination of the first frequency range corresponding to different perovskite photoactive layers.

[0109] For example, an ion characteristic frequency database may include FA, MA, and MDA. 2+ Characteristic frequencies of ions such as Pb, Sn, Cl, Br and I.

[0110] In some embodiments, the characteristic frequency corresponding to the estimated mobile ion species is the center point of a first frequency range.

[0111] In this embodiment, the characteristic frequency corresponding to the estimated mobile ion type is used as the center point of the first frequency range, and a frequency range with a certain bandwidth is set as the first frequency range.

[0112] For example, the predicted mobile ion type is I ion, the characteristic frequency of I ion is 500 Hz, with 500 Hz as the center point and 100 Hz as the bandwidth, the first frequency range is 450 Hz to 550 Hz.

[0113] In this embodiment, from 450Hz to 550Hz, 450Hz, 460Hz, 470Hz, 480Hz, 490Hz, 500Hz, 510Hz, 520Hz, 530Hz, 540Hz and 550Hz are selected as the voltage scanning frequencies for conducting the volt-ampere characteristic test.

[0114] For example, the predicted mobile ion type is I ion, and the characteristic frequency of I ion is 500 Hz. With 500 Hz as the center point and 50 Hz as the bandwidth, the first frequency range is 475 Hz to 525 Hz.

[0115] In some embodiments, the current-voltage characteristic curve is obtained through the following steps:

[0116] The current-voltage characteristic of the semiconductor device under test is tested within the scanning voltage range corresponding to the semiconductor device under test, and the current-voltage characteristic curve is obtained.

[0117] In this embodiment, before performing volt-ampere characteristic tests on the semiconductor device under test, a scanning voltage range is determined, and the volt-ampere characteristic tests on the semiconductor device under test are performed within the scanning voltage range. Different scanning voltage ranges can be set for different semiconductor devices under test.

[0118] In some embodiments, the scanning voltage range is determined based on the bandgap of the semiconductor device under test.

[0119] In this embodiment, the scanning voltage range is determined based on the bandgap of the semiconductor device under test (which is related to the semiconductor material). The current-voltage characteristic test of the semiconductor device under test is performed within the scanning voltage range, and the obtained current-voltage characteristic curve can accurately characterize the device characteristics of the semiconductor device under test.

[0120] Taking the perovskite solar cell as an example, the semiconductor device under test is taken as an example.

[0121] The current-voltage characteristics of a perovskite solar cell module composed of multiple perovskite solar cells can be tested. The scanning voltage range of the perovskite solar cell module can be equal to the band gap of the perovskite photoactive layer multiplied by the number of sub-cells.

[0122] For example, the constituent material of the perovskite photoactive layer is FA. 0.92 MA 0.08 PbI3, of which FA 0.92 MA 0.08The band gap of PbI3 is 1.55 electron volts (eV), and the scanning voltage range of a perovskite solar cell module composed of 220 sub-cells is -1.55*220V to 1.55*220V.

[0123] For example, the perovskite photoactive layer is composed of FA. 0.92 MA 0.08 PbBr3, of which FA 0.92 MA 0.08 The band gap of PbBr3 is 1.67 eV, and the scanning voltage range of the perovskite solar cell module 600 composed of 220 sub-cells is -1.67*220V to 1.67*220V.

[0124] In practice, the band gap width of the perovskite photoactive layer can be determined by measuring the absorption or reflection characteristics of the constituent materials of the perovskite photoactive layer for different wavelengths of light.

[0125] For example, by using a UV-Vis spectrophotometer, the absorption of light of different wavelengths by the constituent materials of the perovskite photoactive layer can be measured, the band gap corresponding to the perovskite photoactive layer can be analyzed, and the scanning voltage range can be obtained.

[0126] In some embodiments, step 120, determining the target characteristic frequency of the semiconductor device under test based on multiple current-voltage characteristic curves, may include:

[0127] Based on multiple current-voltage characteristic curves, the reverse saturation current densities of the semiconductor device under test at different voltage scanning frequencies are determined.

[0128] The target characteristic frequency is determined based on multiple reverse saturation current densities.

[0129] Each reverse saturation current density corresponds to a current-voltage characteristic curve.

[0130] In this embodiment, each current-voltage characteristic curve is fitted and calculated to obtain the reverse saturation current density corresponding to each current-voltage characteristic curve. Each current-voltage characteristic curve corresponds to a different voltage scanning frequency, so multiple reverse saturation current densities of the semiconductor device under test at different voltage scanning frequencies can be obtained.

[0131] For example, by fitting the current-voltage characteristic curve corresponding to the voltage scanning frequency F1, the reverse saturation current density of the semiconductor device under test at the voltage scanning frequency F1 can be obtained; by fitting the current-voltage characteristic curve corresponding to the voltage scanning frequency F2, the reverse saturation current density of the semiconductor device under test at the voltage scanning frequency F2 can be obtained; by fitting the current-voltage characteristic curve corresponding to the voltage scanning frequency F3, the reverse saturation current density of the semiconductor device under test at the voltage scanning frequency F3 can be obtained.

[0132] It is understandable that the semiconductor device under test has PN junction characteristics. Based on PN junction theory, the formula (1) characterizing the reverse current-voltage characteristic curve of the semiconductor device is as follows:

[0133]

[0134] Where J is the current density, A is the PN junction area, and D... n D is the electron diffusion coefficient. p Let n be the hole diffusion coefficient. P0 To achieve the equilibrium minority carrier (electron) concentration in the p-block, p N0 To balance the minority carrier (hole) concentration in the N region, L n L is the electron diffusion length. p denoted as hole diffusion length, q as unit charge, U as bias voltage applied to the semiconductor device under test, k as Boltzmann constant, and T as absolute temperature.

[0135] When the structure of the semiconductor device under test is fixed, A and D in formula (1) n D p n P0 p N0 L n and L p Here, q, k, and T are intrinsic characteristic values. When different bias voltages U are applied to the semiconductor device under test, its current density J is sampled multiple times to obtain multiple sets of sampling data, and the current-voltage characteristic curve can be plotted.

[0136] In this embodiment, formula (1) can be fitted by the three-parameter exponential formula (2), which is as follows:

[0137] J = ae bU +c (2)

[0138] Where a is b is q / kT, c is

[0139] In this embodiment, c in formula (2) is the reverse saturation current density, and formula (3) for solving the reverse saturation current density is as follows:

[0140]

[0141] Where J0 is the reverse saturation current density, A is the PN junction area, and D... n D is the electron diffusion coefficient. p Let n be the hole diffusion coefficient. P0 To achieve the equilibrium minority carrier (electron) concentration in the p-block, p N0 To balance the minority carrier (hole) concentration in the N region, Ln L is the electron diffusion length. p q represents the hole diffusion length and q represents the unit charge.

[0142] It should be noted that the reverse saturation current density reflects the intrinsic characteristics of the semiconductor device under test and can characterize the defect density in the device. The lower the defect density in the device, the lower the reverse saturation current density of the device.

[0143] It is understandable that the reverse saturation current density of the semiconductor device under test is calculated at different voltage scanning frequencies. Each reverse saturation current density corresponds to a voltage scanning frequency. The reverse saturation current density can reflect the intrinsic characteristics of the semiconductor device under test at a certain voltage scanning frequency, and also reflects the migration characteristics of mobile ions at that voltage scanning frequency.

[0144] It should be noted that for a certain mobile ion, there exists a specific frequency at which the reverse saturation dark current of the semiconductor device under test is maximized, and at this time the migration rate of the ion is maximized. This specific frequency can be defined as the characteristic frequency of the ion.

[0145] In this embodiment, the migration characteristics of mobile ions are analyzed based on the reverse saturation current density of the semiconductor device under test at different voltage scanning frequencies, and the characteristic frequency corresponding to the mobile ions, i.e., the target characteristic frequency, is obtained.

[0146] In some embodiments, determining the target characteristic frequency based on multiple reverse saturation current densities includes:

[0147] Based on multiple reverse saturation current densities, a target relationship curve between reverse saturation current density and voltage scanning frequency is constructed.

[0148] The target characteristic frequency is determined based on the peak value of the target relationship curve.

[0149] In this embodiment, each reverse saturation current density corresponds to a voltage scanning frequency. Based on multiple reverse saturation current densities, a target relationship curve can be established with the reverse saturation current density as the vertical axis and the reverse saturation current density as the horizontal axis. The peak value of the target relationship curve corresponds to the case where the reverse saturation current density of the semiconductor device under test is the largest. The frequency value corresponding to the peak value is the characteristic frequency of the mobile ions in the semiconductor device under test, i.e., the target characteristic frequency.

[0150] It should be noted that the frequency value corresponding to the peak of the target relationship curve can be equal to or different from the voltage scanning frequency set during the volt-ampere characteristic test.

[0151] For example, 450Hz, 460Hz, 470Hz, 480Hz, 490Hz, 500Hz, 510Hz, 520Hz, 530Hz, 540Hz, and 550Hz are used as voltage scan frequencies for conducting volt-ampere characteristic tests.

[0152] The frequency value corresponding to the peak of the target relationship curve can be one of 450Hz, 460Hz, 470Hz, 480Hz, 490Hz, 500Hz, 510Hz, 520Hz, 530Hz, 540Hz and 550Hz, or other frequency values ​​between 450Hz and 550Hz.

[0153] It should be noted that by constructing a target relationship curve between reverse saturation current density and voltage scan frequency, the reverse saturation current density of the semiconductor device under test can be analyzed within a certain frequency range. There is no need to perform special processing on the voltage scan frequency set during the current-voltage characteristic test, no need to set a voltage scan frequency equal to the characteristic frequency corresponding to the mobile ions, and there is no limitation on the difference between different voltage scan frequencies. The types of mobile ions in the semiconductor device under test can be accurately detected.

[0154] In some embodiments, the reverse saturation current density is obtained by fitting the negative voltage segment of the current-voltage characteristic curve.

[0155] It should be noted that the semiconductor device under test has PN junction characteristics. The current-voltage characteristics of the PN junction in the dark state are strongly correlated with the characteristic frequency of ion movement. The current-voltage characteristics in the dark state correspond to the current-voltage characteristic curve in the negative voltage range. The reverse saturation current density can be obtained by fitting the negative voltage range of the current-voltage characteristic curve, and the characteristic frequency corresponding to the moving ions in the semiconductor device under test can be accurately detected.

[0156] For example, the constituent material of the perovskite photoactive layer is FA. 0.92 MA 0.08 PbI3, of which FA 0.92 MA 0.08 The band gap of PbI3 is 1.55 eV. The scanning voltage range is -1.55 V to 1.55 V. The current-voltage characteristic test is carried out to obtain the current-voltage characteristic curve from -1.55 V to 1.55 V. The negative voltage range from -1.55 V to 0 V is used to fit the reverse saturation current density, and the positive voltage range from 0 V to 1.55 V can verify the forward conduction characteristics of the perovskite solar cell.

[0157] In practice, scanning the current-voltage characteristic curve of the semiconductor device under test can be performed in the dark.

[0158] The following is a specific example.

[0159] like Figure 2As shown, in step 210, the semiconductor device under test is electrically connected to the current-voltage characteristic testing device 800.

[0160] Step 220: Set the scanning voltage range of the semiconductor device under test. The scanning voltage range can be determined according to the bandgap of the semiconductor device under test. For a single semiconductor device under test, the scanning voltage range can be equal to the positive and negative bandgap.

[0161] Step 230: Select multiple different voltage scanning frequencies within the first frequency range.

[0162] In this step, the estimated types of mobile ions can be determined based on the constituent materials of the semiconductor device under test, a first frequency range can be set according to the characteristic frequencies corresponding to the estimated types of mobile ions, and multiple different voltage scanning frequencies can be selected within the first frequency range.

[0163] Step 240: Perform volt-ampere characteristic test using volt-ampere characteristic test device 800.

[0164] In this step, based on the scanning voltage range and voltage scanning frequency determined in steps 220 and 230, the current-voltage characteristic test of the semiconductor device under test is performed to obtain the current-voltage characteristic curves of the semiconductor device under test at different voltage scanning frequencies.

[0165] For example, such as Figure 3 As shown, the dotted fitting line is the current-voltage characteristic curve of the semiconductor device under test at a certain voltage scanning frequency. The horizontal axis, Voltage, represents the voltage (i.e., the bias voltage applied to the semiconductor device under test), and the vertical axis, Currentdensity, represents the current density.

[0166] Step 250: Fit the reverse saturation current density based on the current-voltage characteristic curve.

[0167] In this step, the reverse saturation current density can be fitted using formulas (1) and (3), with formula (1) as follows:

[0168]

[0169] Where J is the current density, A is the PN junction area, and D... n D is the electron diffusion coefficient. p Let n be the hole diffusion coefficient. P0 To achieve the equilibrium minority carrier (electron) concentration in the p-block, p N0 To balance the minority carrier (hole) concentration in the N region, L n L is the electron diffusion length. p denoted as hole diffusion length, q as unit charge, U as bias voltage applied to the semiconductor device under test, k as Boltzmann constant, and T as absolute temperature;

[0170] Formula (3) is as follows:

[0171]

[0172] Where J0 is the reverse saturation current density.

[0173] Step 260: Determine the target characteristic frequency and the type of mobile ions in the semiconductor device under test.

[0174] In this step, a target relationship curve between reverse saturation current density and voltage scan frequency can be plotted. The peak value in the target relationship curve corresponds to the case with the maximum reverse saturation current density, and the frequency value corresponding to the peak value is the target characteristic frequency. Based on the target characteristic frequency, the mobile ion species information of the semiconductor device under test can be determined.

[0175] The following uses FA as the constituent material of the perovskite photoactive layer. 0.92 MA 0.08 Taking PbI3, with the estimated mobile ion type being I ions, the current-voltage characteristic testing device 800, including an active meter 820 and a signal collection device 810, as an example, will be described in detail.

[0176] Step 1: Connect the perovskite solar cell to the current-voltage characteristic testing device 800.

[0177] Using a two-wire or four-wire connection method, the positive and negative terminals of the perovskite solar cell are connected to the positive and negative terminals of the active meter 820. The active meter 820 applies a linear bias voltage to the perovskite solar cell, and a signal collector collects the current density signal.

[0178] Step 2: Determine the scanning voltage range.

[0179] The scanning voltage range is determined based on the band gap of the perovskite photoactive layer. FA 0.92 MA 0.08 The band gap of PbI3 is 1.55 eV. For a single-junction perovskite solar cell, the scanning voltage range is -1.55 V to 1.55 V. For a perovskite solar cell module composed of 220 sub-cells, the scanning voltage range is -1.55*220 V to 1.55*220 V.

[0180] Step 3: Select the voltage scanning frequency.

[0181] Within the range of 10Hz to 20000Hz, 10Hz, 20Hz, 50Hz, 100Hz, 200Hz, 500Hz, 1000Hz, 2000Hz, 5000Hz, 10000Hz, and 20000Hz were selected as the voltage scan frequencies for testing the current-voltage characteristics of perovskite solar cells.

[0182] In practice, the voltage scanning frequency can be changed by adjusting the voltage scanning speed of the active meter 820.

[0183] For example, voltage scan frequencies of 10Hz, 20Hz, 50Hz, 100Hz, 200Hz, 500Hz, 1000Hz, 2000Hz, 5000Hz, 10000Hz, and 20000Hz correspond to voltage scan speeds of 0.2V / s, 0.4V / s, 1.0V / s, 2.0V / s, 4.0V / s, 10.0V / s, 20.0V / s, 40.0V / s, 100.0V / s, 200.0V / s, and 400.0V / s, respectively.

[0184] Step 4: I-V characteristic test.

[0185] The current-voltage characteristics of the perovskite solar cell were tested using an active current meter 820, and a series of data were recorded using a signal collection device 810 to obtain current-voltage characteristic curves based on different voltage scanning frequencies.

[0186] Step 5: Fitting the reverse saturation current density.

[0187] The reverse saturation current density is fitted using formulas (1) and (3). Formula (1) is as follows:

[0188]

[0189] Where J is the current density, A is the PN junction area, and D... n D is the electron diffusion coefficient. p Let n be the hole diffusion coefficient. P0 To achieve the equilibrium minority carrier (electron) concentration in the p-block, p N0 To balance the minority carrier (hole) concentration in the N region, L n L is the electron diffusion length. p λ is the hole diffusion length, q is the unit charge, U is the bias voltage applied to the perovskite solar cell, k is the Boltzmann constant, and T is the absolute temperature.

[0190] Formula (3) is as follows:

[0191]

[0192] Where J0 is the reverse saturation current density.

[0193] In this embodiment, the reverse saturation current density of the perovskite solar cell at different voltage scanning frequencies was obtained by fitting, as shown in Table 1.

[0194] Table 1

[0195]

[0196] Step 6: Determine the target characteristic frequency and the type of mobile ion.

[0197] like Figure 4 As shown, draw FA 0.92 MA 0.08 The target relationship curve between the voltage scan frequency and the reverse saturation current density of the perovskite solar cell corresponding to PbI3 is shown. The frequency corresponding to the peak of the target relationship curve is the target characteristic frequency.

[0198] In this embodiment, the perovskite solar cell exhibits a maximum reverse saturation current density of 9.6*10⁻⁶ when the voltage scan frequency is 500 Hz. -3 mA / cm 2 The target characteristic frequency is 500Hz, determined by FA. 0.92 MA 0.08 The main mobile ion in the perovskite photoactive layer composed of PbI3 is I ion.

[0199] It should be noted that when performing the current-voltage characteristic test, it is also necessary to set the voltage scan interval, i.e., the step size of the scan voltage. The voltage scan frequency is set to 500Hz. Using an active multimeter 820, voltage scan intervals of 0.01V, 0.02V, 0.05V, 0.10V, 0.20V, 0.50V, and 1.00V are used to test the current-voltage characteristics of the perovskite solar cell. Figure 5 As shown, at the same voltage scanning frequency, the reverse saturation current density is not much different or basically unchanged under different voltage scanning intervals. That is, the characteristic frequency of mobile ions is not highly correlated with the step size of the scanning voltage. When using the volt-ampere characteristic curve to detect the types of mobile ions, there are no special requirements for the setting of the voltage scanning interval.

[0200] Furthermore, the characteristic frequency of a particular mobile ion has very low correlation with the composition of other lattice positions of the perovskite crystal in the perovskite photoactive layer.

[0201] like Figure 4 The material shown is FA. 0.92 MA 0.08 The target relationship curve between voltage scanning frequency and reverse saturation current density corresponding to the perovskite photoactive layer of PbI3.

[0202] like Figure 6 The material shown is FA. 0.92 MDA 0.04 MA 0.04 The target relationship curve between voltage scanning frequency and reverse saturation current density corresponding to the perovskite photoactive layer of PbI3.

[0203] like Figure 4 As shown and as Figure 6 The characteristic frequencies corresponding to the peak values ​​of the target relationship curves shown are all 500Hz. It can be determined that the mobile ions in the perovskite active layer of the two types of perovskite solar cells are all I ions. The components of other lattice positions such as FA, MA, and MDA have very low correlation with the characteristic frequencies of I ions. The types of mobile ions in the perovskite photoactive layer can be detected by current-voltage characteristic testing, which has strong universality.

[0204] The mobile ion detection method provided in this application can be executed by a mobile ion detection device 700. This application uses the mobile ion detection device 700 executing the mobile ion detection method as an example to illustrate the mobile ion detection device 700 provided in this application.

[0205] This application also provides a mobile ion detection device 700.

[0206] like Figure 7 As shown, the mobile ion detection device 700 includes:

[0207] The acquisition module 710 is used to acquire multiple current-voltage characteristic curves of the semiconductor device under test at different voltage scanning frequencies, with each current-voltage characteristic curve corresponding to a voltage scanning frequency.

[0208] The first processing module 720 is used to determine the target characteristic frequency of the semiconductor device under test based on multiple current-voltage characteristic curves.

[0209] The second processing module 730 is used to determine the type of mobile ions in the semiconductor device under test based on the target characteristic frequency.

[0210] According to the mobile ion detection device 700 provided in the embodiments of this application, by acquiring the current-voltage characteristic curves of the semiconductor device under test at different voltage scanning frequencies, the characteristic frequency of mobile ions is determined based on the current-voltage characteristic curves at different voltage scanning frequencies, thereby realizing non-destructive detection of the types of mobile ions in the semiconductor device under test, and the testing and analysis process is simple.

[0211] In some embodiments, the acquisition module 710 is used to acquire multiple current-voltage characteristic curves of the semiconductor device under test at different voltage scanning frequencies, including:

[0212] Obtain multiple current-voltage characteristic curves corresponding to different voltage scanning frequencies within the first frequency range.

[0213] In some embodiments, the first frequency range is 10 Hz to 20000 Hz.

[0214] In some embodiments, the first frequency range is determined by the following steps:

[0215] Based on the mobile ion composition of the semiconductor device under test, the predicted types of mobile ions are determined;

[0216] The first frequency range is determined based on the characteristic frequencies corresponding to the predicted types of mobile ions.

[0217] In some embodiments, the characteristic frequency corresponding to the estimated mobile ion species is the center point of a first frequency range.

[0218] In some embodiments, the current-voltage characteristic curve is obtained through the following steps:

[0219] The current-voltage characteristic of the semiconductor device under test is tested within the scanning voltage range corresponding to the semiconductor device under test, and the current-voltage characteristic curve is obtained.

[0220] In some embodiments, the scanning voltage range is determined based on the bandgap of the semiconductor device under test.

[0221] In some embodiments, the second processing module 730 is configured to determine the target characteristic frequency of the semiconductor device under test based on multiple current-voltage characteristic curves, including:

[0222] Based on multiple current-voltage characteristic curves, multiple reverse saturation current densities corresponding to the semiconductor device under test at different voltage scanning frequencies are determined, and each reverse saturation current density corresponds to a current-voltage characteristic curve.

[0223] The target characteristic frequency is determined based on multiple reverse saturation current densities.

[0224] In some embodiments, the second processing module 730 is configured to determine a target characteristic frequency based on multiple reverse saturation current densities, including:

[0225] Based on multiple reverse saturation current densities, a target relationship curve between reverse saturation current density and voltage scanning frequency is constructed.

[0226] The target characteristic frequency is determined based on the peak value of the target relationship curve.

[0227] In some embodiments, the reverse saturation current density is obtained by fitting the negative voltage segment of the current-voltage characteristic curve.

[0228] The mobile ion detection device 700 in this application embodiment can be an electronic device or a component in an electronic device, such as an integrated circuit or a chip.

[0229] The mobile ion detection device 700 provided in this application embodiment can realize all the processes implemented in the above-described mobile ion detection method embodiment, and will not be described again here to avoid repetition.

[0230] This application also provides a mobile ion detection system.

[0231] like Figure 8 As shown, the mobile ion detection system includes a current-voltage characteristic testing device 800 and a mobile ion detection device 700 as described above.

[0232] The mobile ion detection device 700 is connected to the current-voltage characteristic testing device 800. The current-voltage characteristic testing device 800 is used to connect to the semiconductor device under test and perform current-voltage characteristic testing on the semiconductor device under test to obtain the current-voltage characteristic curve of the semiconductor device under test.

[0233] The current-voltage characteristic testing device 800 may include an active meter 820 and a signal collection device 810. The active meter 820 is connected to the semiconductor device under test and applies bias voltage signals with different voltage scanning frequencies to the semiconductor device under test to excite the semiconductor device under test to generate current signals. The signal collection device 810 is connected to the active meter 820 and collects the current signals generated by the semiconductor device under test and the bias voltage signals applied by the active meter 820.

[0234] In practice, the active meter 820 can also be replaced by other devices that can generate voltage signals, such as electronic loads, multimeters, etc.

[0235] Understandably, the current-voltage characteristic testing device 800 can perform current-voltage characteristic testing on a single semiconductor device under test, or on a component composed of multiple semiconductor devices under test.

[0236] In some embodiments, the current-voltage characteristic testing device 800 is used to adjust the voltage scanning speed to acquire multiple current-voltage characteristic curves corresponding to different voltage scanning frequencies.

[0237] In this embodiment, the voltage scanning frequency during the current-voltage characteristic test can be changed by adjusting the voltage scanning speed of the current-voltage characteristic test device 800, thereby enabling the current-voltage characteristic test device 800 to acquire multiple current-voltage characteristic curves corresponding to different voltage scanning frequencies.

[0238] Taking the adjustment of the voltage scanning speed of the active meter 820 to change the voltage scanning frequency as an example.

[0239] The voltage scan frequencies of 10Hz, 20Hz, 50Hz, 100Hz, 200Hz, 500Hz, 1000Hz, 2000Hz, 5000Hz, 10000Hz, and 20000Hz correspond to voltage scan speeds of 0.2V / s, 0.4V / s, 1.0V / s, 2.0V / s, 4.0V / s, 10.0V / s, 20.0V / s, 40.0V / s, 100.0V / s, 200.0V / s, and 400.0V / s, respectively.

[0240] The voltage scan speed of the active meter 820 was set to 0.2V / s, 0.4V / s, 1.0V / s, 2.0V / s, 4.0V / s, 10.0V / s, 20.0V / s, 40.0V / s, 100.0V / s, 200.0V / s and 400.0V / s respectively, so as to perform volt-ampere characteristic tests on the semiconductor device under test at voltage scan frequencies of 10Hz, 20Hz, 50Hz, 100Hz, 200Hz, 500Hz, 1000Hz, 2000Hz, 5000Hz, 10000Hz and 20000Hz.

[0241] According to the mobile ion detection system provided in the embodiments of this application, by acquiring the current-voltage characteristic curves of the semiconductor device under test at different voltage scanning frequencies, the characteristic frequency of mobile ions is determined based on the current-voltage characteristic curves at different voltage scanning frequencies, thereby realizing non-destructive detection of the types of mobile ions in the semiconductor device under test. Only a current-voltage characteristic testing device 800 is needed to detect the types of mobile ions. The principle and equipment are relatively simple, and the testing and analysis process is simple.

[0242] In some embodiments, such as Figure 9 As shown, this application embodiment also provides an electronic device 900, including a processor 901, a memory 902, and a computer program stored in the memory 902 and executable on the processor 901. When the program is executed by the processor 901, it implements the various processes of the above-described mobile ion detection method embodiment and can achieve the same technical effect. To avoid repetition, it will not be described again here.

[0243] It should be noted that the electronic devices in the embodiments of this application include the mobile electronic devices and non-mobile electronic devices described above.

[0244] This application also provides a non-transitory computer-readable storage medium storing a computer program. When the computer program is executed by a processor, it implements the various processes of the above-described mobile ion detection method embodiments and achieves the same technical effect. To avoid repetition, it will not be described again here.

[0245] The processor is the processor in the electronic device described in the above embodiments. The readable storage medium includes computer-readable storage media, such as computer read-only memory (ROM), random access memory (RAM), magnetic disk, or optical disk.

[0246] This application also provides a computer program product, including a computer program that, when executed by a processor, implements the above-described mobile ion detection method.

[0247] The processor is the processor in the electronic device described in the above embodiments. The readable storage medium includes computer-readable storage media, such as computer read-only memory (ROM), random access memory (RAM), magnetic disk, or optical disk.

[0248] This application embodiment also provides a chip, which includes a processor and a communication interface. The communication interface is coupled to the processor. The processor is used to run programs or instructions to implement the various processes of the above-described mobile ion detection method embodiments and can achieve the same technical effect. To avoid repetition, it will not be described again here.

[0249] It should be understood that the chip mentioned in the embodiments of this application may also be referred to as a system-on-a-chip, system chip, chip system, or system-on-a-chip, etc.

[0250] It should be noted that, in this document, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes that element. Furthermore, it should be noted that the scope of the methods and apparatuses in the embodiments of this application is not limited to performing functions in the order shown or discussed, but may also include performing functions substantially simultaneously or in the reverse order, depending on the functions involved. For example, the described methods may be performed in a different order than described, and various steps may be added, omitted, or combined. Additionally, features described with reference to certain examples may be combined in other examples.

[0251] Through the above description of the embodiments, those skilled in the art can clearly understand that the methods of the above embodiments can be implemented by means of software plus necessary general-purpose hardware platforms. Of course, they can also be implemented by hardware, but in many cases the former is a better implementation method. Based on this understanding, the technical solution of this application, in essence, or the part that contributes to the prior art, can be embodied in the form of a computer software product. This computer software product is stored in a storage medium (such as ROM / RAM, magnetic disk, optical disk) and includes several instructions to cause a terminal (which may be a mobile phone, computer, server, or network device, etc.) to execute the methods described in the various embodiments of this application.

[0252] The embodiments of this application have been described above with reference to the accompanying drawings. However, this application is not limited to the specific embodiments described above. The specific embodiments described above are merely illustrative and not restrictive. Those skilled in the art can make many other forms under the guidance of this application without departing from the spirit and scope of the claims, and all of these forms are within the protection scope of this application.

[0253] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "illustrative embodiment," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of this application. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples.

[0254] Although embodiments of this application have been shown and described, those skilled in the art will understand that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of this application, the scope of which is defined by the claims and their equivalents.

Claims

1. A method for detecting mobile ions, characterized in that, The method is used to detect the types of mobile ions in a semiconductor device, and the method includes: Acquire multiple current-voltage characteristic curves of the semiconductor device under test at different voltage scanning frequencies, with each current-voltage characteristic curve corresponding to a voltage scanning frequency; Based on the multiple current-voltage characteristic curves, the target characteristic frequency of the semiconductor device under test is determined; Based on the target characteristic frequency, the mobile ion species information of the semiconductor device under test is determined.

2. The mobile ion detection method according to claim 1, characterized in that, Determining the target characteristic frequency of the semiconductor device under test based on the multiple current-voltage characteristic curves includes: Based on the multiple current-voltage characteristic curves, multiple reverse saturation current densities corresponding to the semiconductor device under test at different voltage scanning frequencies are determined, and each reverse saturation current density corresponds to one current-voltage characteristic curve. The target characteristic frequency is determined based on the plurality of reverse saturation current densities.

3. The mobile ion detection method according to claim 2, characterized in that, Determining the target characteristic frequency based on the plurality of reverse saturation current densities includes: Based on the multiple reverse saturation current densities, a target relationship curve between the reverse saturation current density and the voltage scanning frequency is constructed. The target feature frequency is determined based on the peak value of the target relationship curve.

4. The mobile ion detection method according to claim 2, characterized in that, The reverse saturation current density is obtained by fitting the negative voltage segment of the current-voltage characteristic curve.

5. The mobile ion detection method according to any one of claims 1-4, characterized in that, The process of acquiring multiple current-voltage characteristic curves of the semiconductor device under test at different voltage scanning frequencies includes: Obtain the multiple current-voltage characteristic curves corresponding to different voltage scanning frequencies within the first frequency range.

6. The mobile ion detection method according to claim 5, characterized in that, The first frequency range is from 10 Hz to 20000 Hz.

7. The mobile ion detection method according to claim 5, characterized in that, The first frequency range is determined by the following steps: Based on the mobile ion composition of the semiconductor device under test, the predicted types of mobile ions are determined; The first frequency range is determined based on the characteristic frequencies corresponding to the estimated types of mobile ions.

8. The mobile ion detection method according to claim 7, characterized in that, The characteristic frequency corresponding to the estimated mobile ion species is the center point of the first frequency range.

9. The method for detecting mobile ions according to any one of claims 1-4, characterized in that, The current-voltage characteristic curve is obtained through the following steps: The semiconductor device under test is subjected to current-voltage characteristic testing within the scanning voltage range corresponding to the semiconductor device under test, and the current-voltage characteristic curve is obtained.

10. The mobile ion detection method according to claim 9, characterized in that, The scanning voltage range is determined based on the bandgap of the semiconductor device under test.

11. A mobile ion detection device, characterized in that, The device is used to detect the type of mobile ions in a semiconductor device, and the device includes: The acquisition module is used to acquire multiple current-voltage characteristic curves of the semiconductor device under test at different voltage scanning frequencies, and each current-voltage characteristic curve corresponds to a voltage scanning frequency; The first processing module is used to determine the target characteristic frequency of the semiconductor device under test based on the multiple current-voltage characteristic curves. The second processing module is used to determine the type of mobile ions in the semiconductor device under test based on the target characteristic frequency.

12. A mobile ion detection system, characterized in that, include: A current-voltage characteristic testing device is used to connect to a semiconductor device under test (SD) to perform current-voltage characteristic testing on the SD to obtain the current-voltage characteristic curve of the SD. The mobile ion detection device as described in claim 11 is connected to the current-voltage characteristic testing device.

13. The mobile ion detection system according to claim 12, characterized in that, The current-voltage characteristic testing device is used to adjust the voltage scanning speed to acquire multiple current-voltage characteristic curves corresponding to different voltage scanning frequencies.

14. An electronic device comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, characterized in that, When the processor executes the program, it implements the mobile ion detection method as described in any one of claims 1-10.

15. A non-transitory computer-readable storage medium having a computer program stored thereon, characterized in that, When the computer program is executed by the processor, it implements the mobile ion detection method as described in any one of claims 1-10.

16. A computer program product, comprising a computer program, characterized in that, When the computer program is executed by the processor, it implements the mobile ion detection method as described in any one of claims 1-10.

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