magnetic sensor

Abstract

A magnetic sensor according to the present application includes a substrate having a reference plane, a support member disposed on the substrate and having at least one inclined surface inclined with respect to the reference plane, at least one magnetic detection element disposed on the at least one inclined surface, and an insulating portion composed of an insulating material disposed on a portion of the at least one magnetic detection element.

Description

[0001] This application was filed on [date]. September 20, 2022 Application number is 202211142505.2 The invention is named Magnetic sensing instrument A divisional application of the patent application. Technical Field

[0002] The present invention relates to a magnetic sensor having a magnetoresistive element disposed on an inclined surface. Background Technology

[0003] In recent years, magnetic sensors utilizing magnetoresistive elements have been employed for various applications. In systems incorporating magnetic sensors, it is sometimes desirable to detect a magnetic field component that includes a direction perpendicular to the surface of the substrate using a magnetoresistive element disposed on a substrate. In such cases, by providing a soft magnetic material that converts the magnetic field perpendicular to the surface of the substrate into a magnetic field parallel to the surface of the substrate, or by disposing of a magnetoresistive element on an inclined surface formed on the substrate, it is possible to detect a magnetic field component that includes a direction perpendicular to the surface of the substrate.

[0004] As a magnetoresistive effect element, a spin valve type magnetoresistive effect element is used, for example. The spin valve type magnetoresistive effect element has: a magnetization fixed layer having magnetization with a fixed direction; a free layer having magnetization with an direction that can change according to the direction of the applied magnetic field; and a gap layer disposed between the magnetization fixed layer and the free layer.

[0005] Japanese Patent Application Publication No. 2006-194733 discloses a magnetic sensor having a magnetoresistive element formed on an inclined surface. Japanese Patent Application Publication No. 2008-141210 discloses a technique for reducing the stress on the magnetoresistive element by forming two protective films of different materials on the side of the magnetoresistive element.

[0006] Typically, as in the magnetic sensor disclosed in Japanese Patent Application Publication No. 2006-194733, when a magnetoresistive element is formed on an inclined surface, the side surface of the magnetoresistive element becomes tapered. Here, consider the case where a spin-valve type magnetoresistive element is used, as in the technology disclosed in Japanese Patent Application Publication No. 2008-141210, where an insulating layer formed around the magnetoresistive element is used to control its characteristics. The areas of the first layer near the inclined surface and the second layer away from the inclined surface are different. Therefore, the influence from the insulating layer is also different in the first and second layers. As a result, sometimes the characteristics of the magnetoresistive element differ from expectations. Summary of the Invention

[0007] The object of the present invention is to provide a magnetic sensor that can achieve the desired characteristics in a magnetic sensor having a magnetoresistive element disposed on an inclined surface.

[0008] The magnetic sensor of the present invention comprises: a substrate having a reference plane; a support member disposed on the substrate having at least one inclined surface inclined relative to the reference plane; at least one magnetic detection element disposed on at least one inclined surface; a first insulating portion made of insulating material disposed on a portion of the at least one magnetic detection element; and a second insulating portion made of insulating material, which, when viewed from the first insulating portion, is disposed in front of another portion of the at least one magnetic detection element in a direction along the at least one inclined surface and away from the reference plane.

[0009] In the magnetic sensor of the present invention, a first insulating portion is disposed on a portion of the magnetic detection element disposed on an inclined surface, and a second insulating portion is disposed on another portion of the magnetic detection element. Therefore, according to the present invention, the desired characteristics can be achieved in a magnetic sensor having a magnetoresistive effect element disposed on an inclined surface.

[0010] Other objects, features and benefits of the present invention will become fully apparent from the following description. Attached Figure Description

[0011] Figure 1 This is a perspective view showing the magnetic sensor according to the first embodiment of the present invention.

[0012] Figure 2 This is a functional block diagram illustrating the structure of a magnetic sensor device including the magnetic sensor of the first embodiment of the present invention.

[0013] Figure 3 This is a circuit diagram showing the circuit structure of the first detection circuit according to the first embodiment of the present invention.

[0014] Figure 4 This is a circuit diagram showing the circuit structure of the second detection circuit according to the first embodiment of the present invention.

[0015] Figure 5 This is a top view showing a portion of the magnetic sensor according to the first embodiment of the present invention.

[0016] Figure 6 This is a cross-sectional view showing a portion of the magnetic sensor according to the first embodiment of the present invention.

[0017] Figure 7 This is a side view showing the magnetoresistive effect element according to the first embodiment of the present invention.

[0018] Figure 8This is a cross-sectional view showing the first and second insulating portions of a first example of a first embodiment of the present invention.

[0019] Figure 9 This is a cross-sectional view showing the first and second insulating portions of a second example of the first embodiment of the present invention.

[0020] Figure 10 This is a cross-sectional view showing the first and second insulating portions of a third example of the first embodiment of the present invention.

[0021] Figure 11 This is a cross-sectional view showing the first and second insulating portions of a fourth example of the first embodiment of the present invention.

[0022] Figure 12 This is a cross-sectional view showing a portion of the magnetic sensor according to a second embodiment of the present invention. Detailed Implementation

[0023] [First Implementation Method]

[0024] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. First, referring to... Figure 1 and Figure 2 The structure of the magnetic sensor according to the first embodiment of the present invention will be described. Figure 1 This is a perspective view showing the magnetic sensor of this embodiment. Figure 2 This is a functional block diagram showing the structure of a magnetic sensor device including the magnetic sensor of this embodiment.

[0025] like Figure 1 As shown, the magnetic sensor 1 has the form of a cuboid-shaped chip. The magnetic sensor 1 has an upper surface 1a and a lower surface located opposite each other, and four side surfaces connecting the upper surface 1a and the lower surface. Additionally, the magnetic sensor 1 has multiple electrode pads disposed on the upper surface 1a.

[0026] Here, refer to Figure 1 The reference coordinate system of this embodiment will be explained. The reference coordinate system is a coordinate system based on the magnetic sensor 1, and is an orthogonal coordinate system defined by three axes. In the reference coordinate system, the X direction, Y direction, and Z direction are defined. The X direction, Y direction, and Z direction are orthogonal to each other. In this embodiment, specifically, the direction perpendicular to the upper surface 1a of the magnetic sensor 1, that is, the direction from the lower surface of the magnetic sensor 1 towards the upper surface 1a, is defined as the Z direction. Furthermore, the direction opposite to the X direction is defined as the -X direction, the direction opposite to the Y direction is defined as the -Y direction, and the direction opposite to the Z direction is defined as the -Z direction. The three axes of the reference coordinate system are defined as the axis parallel to the X direction, the axis parallel to the Y direction, and the axis parallel to the Z direction.

[0027] Hereinafter, the position in front of the reference position in the Z direction will be referred to as "above," and the position on the opposite side of the reference position relative to "above" will be referred to as "below." Furthermore, regarding the components of the magnetic sensor 1, the surface located at the Z-direction end will be referred to as the "upper surface," and the surface located at the -Z-direction end will be referred to as the "lower surface." Additionally, the expression "when viewed from the Z-direction" refers to viewing the object from a position separated along the Z-direction.

[0028] like Figure 2 As shown, the magnetic sensor 1 includes a first detection circuit 20 and a second detection circuit 30. Each of the first and second detection circuits 20 and 30 includes a plurality of magnetic detection elements, configured to detect the magnetic field of the target object and generate at least one detection signal. In this embodiment, in particular, the plurality of magnetic detection elements are a plurality of magnetoresistive effect elements. Hereinafter, the magnetoresistive effect elements will be referred to as MR elements.

[0029] The multiple detection signals generated by the first and second detection circuits 20 and 30 are processed by the processor 40. The magnetic sensor 1 and the processor 40 constitute the magnetic sensor device 100. The processor 40 is configured to process the multiple detection signals generated by the first and second detection circuits 20 and 30 to generate a first detection value and a second detection value that correspond to components of the magnetic field in two mutually different directions at a predetermined reference position. In this embodiment, specifically, the two mutually different directions are a direction parallel to the XY plane and a direction parallel to the Z direction. The processor 40 is, for example, constructed from an application-specific integrated circuit (ASIC).

[0030] The processor 40 may also be included in a support body that supports the magnetic sensor 1. This support body has multiple electrode pads. The first and second detection circuits 20 and 30 and the processor 40 are connected, for example, via the multiple electrode pads of the magnetic sensor 1, the multiple electrode pads of the support body, and multiple bonding wires. When the multiple electrode pads of the magnetic sensor 1 are disposed on the upper surface 1a of the magnetic sensor 1, the magnetic sensor 1 may also be mounted on the upper surface of the support body with its lower surface facing the upper surface of the support body.

[0031] Next, refer to Figures 3-6 The first and second detection circuits 20 and 30 will be described. Figure 3 This is a circuit diagram showing the circuit structure of the first detection circuit 20. Figure 4 This is a circuit diagram showing the circuit structure of the second detection circuit 30. Figure 5 This is a top view showing a portion of the magnetic sensor 1. Figure 6 This is a cross-sectional view showing a portion of the magnetic sensor 1.

[0032] Here, as Figure 5As shown, the U direction and V direction are defined as follows. The U direction is the direction of rotation from the X direction toward the -Y direction. The V direction is the direction of rotation from the Y direction toward the X direction. In this embodiment, specifically, the U direction is defined as the direction of rotation from the X direction toward the -Y direction by an amount α, and the V direction is defined as the direction of rotation from the Y direction toward the X direction by an amount α. Furthermore, α is an angle greater than 0° and less than 90°. In one example, α is 45°. In addition, the direction opposite to the U direction is defined as the -U direction, and the direction opposite to the V direction is defined as the -V direction.

[0033] In addition, such as Figure 6 As shown, the W1 and W2 directions are defined as follows. The W1 direction is the direction of rotation from the V direction toward the -Z direction. The W2 direction is the direction of rotation from the V direction toward the Z direction. In this embodiment, specifically, the W1 direction is defined as the direction of rotation by an amount β from the V direction toward the -Z direction, and the W2 direction is defined as the direction of rotation by an amount β from the V direction toward the Z direction. Furthermore, β is an angle greater than 0° and less than 90°. In addition, the direction opposite to the W1 direction is defined as the -W1 direction, and the direction opposite to the W2 direction is defined as the -W2 direction. The W1 and W2 directions are both orthogonal to the U direction.

[0034] The first detection circuit 20 is configured to detect the component of the magnetic field parallel to the W1 direction of the object, and generate at least one first detection signal corresponding to the component. The second detection circuit 30 is configured to detect the component of the magnetic field parallel to the W2 direction of the object, and generate at least one second detection signal corresponding to the component.

[0035] like Figure 3 As shown, the first detection circuit 20 includes: a power supply terminal V2, a ground terminal G2, signal output terminals E21 and E22, a first resistor R21, a second resistor R22, a third resistor R23, and a fourth resistor R24. The multiple MR elements of the first detection circuit 20 constitute the first to fourth resistors R21, R22, R23, and R24.

[0036] The first resistor R21 is located between the power supply terminal V2 and the signal output terminal E21. The second resistor R22 is located between the signal output terminal E21 and the ground terminal G2. The third resistor R23 is located between the signal output terminal E22 and the ground terminal G2. The fourth resistor R24 ​​is located between the power supply terminal V2 and the signal output terminal E22.

[0037] like Figure 4As shown, the second detection circuit 30 includes: a power supply terminal V3, a ground terminal G3, signal output terminals E31 and E32, a first resistor R31, a second resistor R32, a third resistor R33, and a fourth resistor R34. The multiple MR elements of the second detection circuit 30 constitute the first to fourth resistors R31, R32, R33, and R34.

[0038] The first resistor R31 is located between the power supply terminal V3 and the signal output terminal E31. The second resistor R32 is located between the signal output terminal E31 and the ground terminal G3. The third resistor R33 is located between the signal output terminal E32 and the ground terminal G3. The fourth resistor R34 is located between the power supply terminal V3 and the signal output terminal E32.

[0039] Apply a specified voltage or current to power supply terminals V2 and V3 respectively. Ground terminals G2 and G3 are each grounded.

[0040] Hereinafter, the plurality of MR elements in the first detection circuit 20 will be referred to as a plurality of first MR elements 50B, and the plurality of MR elements in the second detection circuit 30 will be referred to as a plurality of second MR elements 50C. The first and second detection circuits 20 and 30 are constituent elements of the magnetic sensor 1; therefore, it can also be said that the magnetic sensor 1 includes a plurality of first MR elements 50B and a plurality of second MR elements 50C. Furthermore, any MR element will be indicated by the symbol 50.

[0041] Figure 7 This is a side view showing the MR element 50. The MR element 50 is a spin-valve type MR element comprising multiple magnetic layers. The MR element 50 has: a magnetized fixed layer 51 having magnetization with a fixed direction; a free layer 53 having magnetization with an direction that can vary according to the direction of the object's magnetic field; and a gap layer 52 disposed between the magnetized fixed layer 51 and the free layer 53. The MR element 50 can also be a TMR (tunneling magnetoresistance) element or a GMR (giant magnetoresistance) element. In a TMR element, the gap layer 52 is a tunnel barrier layer. In a GMR element, the gap layer 52 is a non-magnetic conductive layer. In the MR element 50, the resistance value varies according to the angle formed by the magnetization direction of the free layer 53 relative to the magnetization direction of the magnetized fixed layer 51, with the resistance value being the minimum at an angle of 0° and the resistance value being the maximum at an angle of 180°. In each MR element 50, the free layer 53 has an anisotropic shape, with its easy magnetization axis oriented orthogonal to the magnetization direction of the magnetization of the magnetization fixation layer 51. Furthermore, as a means of setting a predetermined direction for the easy magnetization axis of the free layer 53, a magnet that applies a bias magnetic field to the free layer 53 can also be used. The magnetization fixation layer 51, the gap layer 52, and the free layer 53 are stacked sequentially.

[0042] The MR element 50 may also have an antiferromagnetic layer disposed on the magnetization fixation layer 51, opposite to the gap layer 52. The antiferromagnetic layer is made of an antiferromagnetic material and generates exchange coupling with the magnetization fixation layer 51, fixing the magnetization direction of the magnetization fixation layer 51. Alternatively, the magnetization fixation layer 51 may also be a so-called synthetic ferri-pinned layer (SFP layer). A synthetic ferri-pinned layer has a stacked ferromagnetic structure consisting of a ferromagnetic layer, a non-magnetic intermediate layer, and a ferromagnetic layer, with the two ferromagnetic layers antiferromagnetically coupled.

[0043] Furthermore, the arrangement of layers 51-53 of the MR element 50 can also be consistent with... Figure 7 The configuration shown is reversed top to bottom.

[0044] exist Figure 3 and Figure 4 In the diagram, solid arrows indicate the magnetization direction of the magnetized fixed layer 51 of the MR element 50. Hollow arrows indicate the magnetization direction of the free layer 53 of the MR element 50 when no target magnetic field is applied to the MR element 50.

[0045] exist Figure 3 In the example shown, the magnetization direction of the magnetization fixing layer 51 of the first and third resistors R21 and R23 is the W1 direction. The magnetization direction of the magnetization fixing layer 51 of the second and fourth resistors R22 and R24 is the -W1 direction. Furthermore, the free layer 53 of each of the plurality of first MR elements 50B has an anisotropic shape, with its easy magnetization axis parallel to the U direction. When no target magnetic field is applied to the first MR element 50B, the magnetization direction of the free layer 53 of the first and second resistors R21 and R22 is the U direction. In the above case, the magnetization direction of the free layer 53 of the third and fourth resistors R23 and R24 is the -U direction.

[0046] exist Figure 4 In the example shown, the magnetization direction of the magnetization fixing layer 51 of the first and third resistors R31 and R33 is the W2 direction. The magnetization direction of the magnetization fixing layer 51 of the second and fourth resistors R32 and R34 is the -W2 direction. Furthermore, the free layer 53 of each of the plurality of second MR elements 50C has an anisotropic shape, with its easy magnetization axis parallel to the U direction. When no target magnetic field is applied to the second MR element 50C, the magnetization direction of the free layer 53 of the first and second resistors R31 and R32 is the U direction. In the above case, the magnetization direction of the free layer 53 of the third and fourth resistors R33 and R34 is the -U direction.

[0047] The magnetic sensor 1 includes a magnetic field generator configured to apply a magnetic field of a predetermined direction to the free layer 53 of each of the plurality of first MR elements 50B and the plurality of second MR elements 50C. In this embodiment, the magnetic field generator includes a coil 80 that applies a magnetic field of a predetermined direction to the free layer 53 of each of the plurality of first MR elements 50B and the plurality of second MR elements 50C.

[0048] Furthermore, from the perspective of manufacturing precision of the MR element 50, the magnetization direction of the magnetization of the magnetization fixing layer 51 and the direction of the easy magnetization axis of the free layer 53 can be slightly deviated from the aforementioned directions. Additionally, the magnetization of the magnetization fixing layer 51 can also be configured to include a magnetization component with the aforementioned direction as the primary component. In this case, the magnetization direction of the magnetization fixing layer 51 is the aforementioned direction or approximately the aforementioned direction.

[0049] In this embodiment, the MR element 50 is configured such that current flows along the stacking direction of the plurality of magnetic layers, namely the magnetized fixed layer 51 and the free layer 53. As described later, the magnetic sensor 1 includes a lower electrode and an upper electrode for allowing current to flow in the MR element 50. The MR element 50 is disposed between the lower electrode and the upper electrode.

[0050] The following is for reference Figure 5 and Figure 6 The specific structure of magnetic sensor 1 will be described in detail. Figure 6 Show Figure 5 A portion of the cross section at the location indicated by line 6-6.

[0051] The magnetic sensor 1 includes: a substrate 301 having an upper surface 301a; insulating layers 302, 303, 304, 305, 306, 307, 308, 309, and 310; multiple lower electrodes 61B and 61C; multiple upper electrodes 62B and 62C; multiple lower coil elements 81; and multiple upper coil elements 82. The upper surface 301a of the substrate 301 is parallel to the XY plane. The Z direction is also perpendicular to the upper surface 301a of the substrate 301. Furthermore, the coil elements are part of the winding of a coil.

[0052] An insulating layer 302 is disposed on a substrate 301. A plurality of lower coil elements 81 are disposed on the insulating layer 302. An insulating layer 303 is disposed on the insulating layer 302 around the plurality of lower coil elements 81. Insulating layers 304 and 305 are sequentially stacked on the plurality of lower coil elements 81 and the insulating layer 303.

[0053] Multiple lower electrodes 61B and multiple lower electrodes 61C are disposed on insulating layer 305. Multiple first MR elements 50B are disposed on the multiple lower electrodes 61B. Multiple second MR elements 50C are disposed on the multiple lower electrodes 61C. Insulating layer 306 is disposed on the multiple lower electrodes 61B and multiple lower electrodes 61C, surrounding the multiple first MR elements 50B and the multiple second MR elements 50C. Insulating layer 307 is disposed on insulating layer 305, surrounding the multiple lower electrodes 61B, the multiple lower electrodes 61C, and the insulating layer 306.

[0054] An insulating layer 308 is disposed on a portion of each of the plurality of first MR elements 50B, a portion of each of the plurality of second MR elements 50C, and on insulating layers 306 and 307. A plurality of upper electrodes 62B are disposed on another portion of each of the plurality of first MR elements 50B and a portion of insulating layer 308. A plurality of upper electrodes 62C are disposed on another portion of each of the plurality of second MR elements 50C and a portion of insulating layer 308. An insulating layer 309 is disposed on another portion of insulating layer 308 around the plurality of upper electrodes 62B and around the plurality of upper electrodes 62C.

[0055] An insulating layer 310 is disposed over a plurality of upper electrodes 62B, a plurality of upper electrodes 62C, and an insulating layer 309. A plurality of upper coil elements 82 are disposed over the insulating layer 310. The magnetic sensor 1 may also further include an insulating layer (not shown) covering the plurality of upper coil elements 82 and the insulating layer 310.

[0056] The magnetic sensor 1 includes a support member supporting a plurality of first MR elements 50B and a plurality of second MR elements 50C. The support member has at least one inclined surface that is inclined relative to the upper surface 301a of the substrate 301. In this embodiment, the support member is specifically formed of an insulating layer 305. Furthermore, in… Figure 5 The diagram shows the components of the magnetic sensor 1, including an insulating layer 305, a plurality of first MR elements 50B, a plurality of second MR elements 50C, and a plurality of upper coil elements 82.

[0057] The insulating layer 305 has a plurality of convex surfaces 305c extending in a direction (Z direction) away from the upper surface 301a of the substrate 301. Each of the plurality of convex surfaces 305c extends in a direction parallel to the U direction. The overall shape of the convex surfaces 305c is such that... Figure 6 The convex surface 305c shown is a semi-cylindrical curved surface formed by moving its curved shape (arch shape) along a direction parallel to the U direction. In addition, multiple convex surfaces 305c are arranged at predetermined intervals in a direction parallel to the V direction.

[0058] Each of the plurality of convex surfaces 305c has an upper end portion furthest from the upper surface 301a of the substrate 301. In this embodiment, the upper end portion of each of the plurality of convex surfaces 305c is an upper end portion extending in a direction parallel to the U direction. Here, we focus on any one of the plurality of convex surfaces 305c. The convex surface 305c includes a first inclined surface 305a and a second inclined surface 305b. The first inclined surface 305a is the surface of the convex surface 305c that is further toward the V direction side than the upper end portion of the convex surface 305c. The second inclined surface 305b is the surface of the convex surface 305c that is further toward the -V direction side than the upper end portion of the convex surface 305c. Figure 5 In the diagram, the boundaries of the first inclined surface 305a and the second inclined surface 305b are represented by dashed lines.

[0059] The upper end of the convex surface 305c can also be the boundary between the first inclined surface 305a and the second inclined surface 305b. In this case, Figure 5 The dashed line shown represents the upper end of the convex surface 305c.

[0060] The upper surface 301a of the substrate 301 is parallel to the XY plane. The first inclined surface 305a and the second inclined surface 305b are each inclined relative to the upper surface 301a of the substrate 301, i.e., the XY plane. In a cross-section perpendicular to the upper surface 301a of the substrate 301, the spacing between the first inclined surface 305a and the second inclined surface 305b decreases as the distance from the upper surface 301a of the substrate 301 increases.

[0061] In this embodiment, there are multiple convex surfaces 305c, and therefore, there are also multiple first inclined surfaces 305a and second inclined surfaces 305b. The insulating layer 305 has multiple first inclined surfaces 305a and multiple second inclined surfaces 305b.

[0062] The insulating layer 305 also has a flat surface 305d surrounding the plurality of convex surfaces 305c. The flat surface 305d is a surface parallel to the upper surface 301a of the substrate 301. Each of the plurality of convex surfaces 305c protrudes from the flat surface 305d in the Z direction. In addition, in this embodiment, the plurality of convex surfaces 305c are arranged at predetermined intervals. Therefore, a flat surface 305d exists between two adjacent convex surfaces 305c in the V direction.

[0063] The insulating layer 305 includes a plurality of protrusions projecting along the Z-direction and flat portions surrounding the protrusions. Each of the protrusions extends in a direction parallel to the U-direction and has a convex surface 305c. Furthermore, the protrusions are arranged at predetermined intervals in a direction parallel to the V-direction. The thickness (dimension in the Z-direction) of the flat portions is substantially constant. Additionally, the insulating layer 304 has a substantially constant thickness (dimension in the Z-direction) and is formed along the lower surface of the insulating layer 305.

[0064] Multiple lower electrodes 61B are disposed on multiple first inclined surfaces 305a. Multiple lower electrodes 61C are disposed on multiple second inclined surfaces 305b. As described above, the first inclined surfaces 305a and the second inclined surfaces 305b are each inclined relative to the upper surface 301a of the substrate 301, i.e., the XY plane. Therefore, the upper surfaces of each of the multiple lower electrodes 61B and each of the multiple lower electrodes 61C are also inclined relative to the XY plane. Thus, it can be said that multiple first MR elements 50B and multiple second MR elements 50C are disposed on inclined surfaces inclined relative to the XY plane. The insulating layer 305 is a component for supporting each of the multiple first MR elements 50B and multiple second MR elements 50C in an inclined manner relative to the XY plane.

[0065] Furthermore, in this embodiment, the first inclined surface 305a is curved. Therefore, the first MR element 50B is bent along the curved surface (first inclined surface 305a). In this embodiment, for convenience, the magnetization direction of the magnetization fixing layer 51 of the first MR element 50B is defined as a straight line direction as described above. The magnetization direction of the magnetization fixing layer 51 of the first MR element 50B, namely the W1 direction and the -W1 direction, is also the direction in which the wiring connected to the portion of the first inclined surface 305a near the first MR element 50B extends.

[0066] Similarly, in this embodiment, the second inclined surface 305b is curved. Therefore, the second MR element 50C is bent along the curved surface (second inclined surface 305b). In this embodiment, for convenience, the magnetization direction of the magnetization fixing layer 51 of the second MR element 50C is defined as a straight line direction as described above. The magnetization direction of the magnetization fixing layer 51 of the second MR element 50C, i.e., the W2 direction and the -W2 direction, is also the direction in which the wiring connected to the portion of the second inclined surface 305b near the second MR element 50C extends.

[0067] like Figure 5 As shown, a plurality of first MR elements 50B are arranged in parallel in both the U and V directions. On a first inclined surface 305a, the plurality of first MR elements 50B are arranged in a single column. Similarly, a plurality of second MR elements 50C are arranged in parallel in both the U and V directions. On a second inclined surface 305b, the plurality of second MR elements 50C are arranged in a single column. In this embodiment, the columns of the plurality of first MR elements 50B and the columns of the plurality of second MR elements 50C are alternately arranged in a direction parallel to the V direction.

[0068] Furthermore, when viewed from the Z direction, an adjacent first MR element 50B and a second MR element 50C can be offset in a direction parallel to the U direction, or they can be perfectly offset. Additionally, when viewed from the Z direction, two adjacent first MR elements 50B separated by one second MR element 50C can be offset in a direction parallel to the U direction, or they can be perfectly offset. Furthermore, when viewed from the Z direction, two adjacent second MR elements 50C separated by one first MR element 50B can be offset in a direction parallel to the U direction, or they can be perfectly offset.

[0069] Multiple first MR elements 50B are connected in series via multiple lower electrodes 61B and multiple upper electrodes 62B. Referring here... Figure 7 The connection method of multiple first MR elements 50B is described in detail. Figure 7 In the diagram, symbol 61 represents the lower electrode corresponding to any MR element 50, and symbol 62 represents the upper electrode corresponding to any MR element 50. For example... Figure 7 As shown, each lower electrode 61 has an elongated shape. A gap is formed between two adjacent lower electrodes 61 along their long sides. MR elements 50 are disposed near both ends of the upper surface of the lower electrodes 61 along their long sides. Furthermore, each upper electrode 62 has an elongated shape, and two adjacent MR elements 50 disposed on adjacent lower electrodes 61 along their long sides are electrically connected to each other.

[0070] Although not shown, one MR element 50 located at one end of a column of multiple MR elements 50 arranged in a row is connected to another MR element 50 located at one end of a column of multiple other MR elements 50 adjacent to it in a direction intersecting the long side direction of the lower electrode 61. The two MR elements 50 are connected to each other by an electrode not shown. The electrode not shown may also be an electrode that connects the lower surfaces or upper surfaces of the two MR elements 50 to each other.

[0071] exist Figure 7 When the MR element 50 shown is the first MR element 50B, Figure 7 The lower electrode 61 shown corresponds to the lower electrode 61B. Figure 7 The upper electrode 62 shown corresponds to the upper electrode 62B. Furthermore, in this case, the long side direction of the lower electrode 61 is parallel to the U direction.

[0072] Similarly, multiple second MR elements 50C are connected in series via multiple lower electrodes 61C and multiple upper electrodes 62C. The description of the connection method for the multiple first MR elements 50B also applies to the connection method for the multiple second MR elements 50C. Figure 7When the MR element 50 shown is the second MR element 50C, Figure 7 The lower electrode 61 shown corresponds to the lower electrode 61C. Figure 7 The upper electrode 62 shown corresponds to the upper electrode 62C. Furthermore, in this case, the long side direction of the lower electrode 61 is parallel to the U direction.

[0073] Each of the plurality of upper coil elements 82 extends in a direction parallel to the Y direction. Furthermore, the plurality of upper coil elements 82 are arranged side-by-side in the X direction. In this embodiment, in particular, when viewed from the Z direction, two upper coil elements 82 overlap in each of the plurality of first MR elements 50B and the plurality of second MR elements 50C.

[0074] Each of the plurality of lower coil elements 81 extends in a direction parallel to the Y direction. Furthermore, the plurality of lower coil elements 81 are arranged side-by-side in the X direction. The shape and arrangement of the plurality of lower coil elements 81 may be the same as or different from the shape and arrangement of the plurality of upper coil elements 82. Figure 5 and Figure 6 In the example shown, the X-direction dimension of each of the plurality of lower coil elements 81 is smaller than the X-direction dimension of each of the plurality of upper coil elements 82. Furthermore, the spacing between two adjacent lower coil elements 81 in the X-direction is smaller than the spacing between two adjacent upper coil elements 82 in the X-direction.

[0075] exist Figure 5 and Figure 6 In the example shown, multiple lower coil elements 81 and multiple upper coil elements 82 are electrically connected to form a coil 80 that applies a magnetic field parallel to the X-direction to the free layers 53 of each of the multiple first MR elements 50B and the multiple second MR elements 50C. Alternatively, the coil 80 may be configured to, for example, apply an X-direction magnetic field to the free layers 53 of the first and second resistors R21 and R22 of the first detection circuit 20 and the first and second resistors R31 and R32 of the second detection circuit 30, and apply a -X-direction magnetic field to the free layers 53 of the third and fourth resistors R23 and R24 of the first detection circuit 20 and the third and fourth resistors R33 and R34 of the second detection circuit 30. Furthermore, the coil 80 may also be controlled by the processor 40.

[0076] Next, the first and second detection signals will be explained. First, refer to... Figure 3The first detection signal will be explained below. When the intensity of the component of the object's magnetic field parallel to the W1 direction changes, the resistance values ​​of the resistors R21 to R24 in the first detection circuit 20 change as follows: the resistance values ​​of resistors R21 and R23 increase and the resistance values ​​of resistors R22 and R24 decrease, or the resistance values ​​of resistors R21 and R23 decrease and the resistance values ​​of resistors R22 and R24 increase. As a result, the potentials of the signal output terminals E21 and E22 change. The first detection circuit 20 is configured to generate a first detection signal S21 as the signal corresponding to the potential of the signal output terminal E21, and to generate a first detection signal S22 as the signal corresponding to the potential of the signal output terminal E22.

[0077] Next, refer to Figure 4 The second detection signal will now be explained. When the intensity of the component of the object's magnetic field parallel to the W2 direction changes, the resistance values ​​of the resistors R31 to R34 in the second detection circuit 30 change as follows: the resistance values ​​of resistors R31 and R33 increase while the resistance values ​​of resistors R32 and R34 decrease, or the resistance values ​​of resistors R31 and R33 decrease while the resistance values ​​of resistors R32 and R34 increase. Consequently, the potentials of the signal output terminals E31 and E32 change. The second detection circuit 30 is configured to generate a second detection signal S31 corresponding to the potential of the signal output terminal E31, and to generate a second detection signal S32 corresponding to the potential of the signal output terminal E32.

[0078] Next, the operation of the processor 40 will be explained. The processor 40 is configured to generate a first detection value and a second detection value based on the first detection signals S21 and S22 and the second detection signals S31 and S32. The first detection value corresponds to the component of the object's magnetic field parallel to the V direction. The second detection value corresponds to the component of the object's magnetic field parallel to the Z direction. Hereinafter, the first detection value will be denoted by the symbol Sv, and the second detection value by the symbol Sz.

[0079] Processor 40 generates the first and second detection values ​​Sv and Sz as follows. Processor 40 first generates value S1 by an operation involving calculating the difference S21-S22 between the first detection signal S21 and the first detection signal S22, and generates value S2 by an operation involving calculating the difference S31-S32 between the second detection signal S31 and the second detection signal S32. Then, processor 40 calculates values ​​S3 and S4 using the following equations (1) and (2).

[0080] S3 = (S2+S1) / (2cosα) …(1)

[0081] S4 = (S2-S1) / (2sinα) …(2)

[0082] The first detection value Sv can be the value S3 itself, or it can be a value to which a specified correction, such as gain adjustment and offset adjustment, has been applied. Similarly, the second detection value Sz can be the value S4 itself, or it can be a value to which a specified correction, such as gain adjustment and offset adjustment, has been applied.

[0083] Next, the structural features of the magnetic sensor 1 in this embodiment will be described. First, the first example will be described. Figure 8 This is a cross-sectional view showing the first and second insulating parts of the first example.

[0084] Figure 8 The section shown intersects the MR element 50 disposed on an arbitrary inclined plane 305e, i.e., the section parallel to the VZ plane. Hereinafter, the section parallel to the VZ plane will be referred to as the VZ section. Figure 8 The VZ section shown can also be the same as... Figure 6 Similarly, the VZ section of the MR element 50 is viewed from a position in front in the U direction. In this case, the MR element 50, the lower electrode 61, and the inclined surface 305e correspond to the first MR element 50B, the lower electrode 61B, and the first inclined surface 305a, respectively. Alternatively, Figure 8 The VZ section shown can also be the VZ section of the MR element 50 viewed from a position in front of it in the -U direction. In this case, the MR element 50, the lower electrode 61, and the inclined surface 305e correspond to the second MR element 50C, the lower electrode 61C, and the second inclined surface 305b, respectively.

[0085] Here, as Figure 8 and Figure 9 As shown, a first direction D1 and a second direction D2 parallel to the VZ plane are defined. The first direction D1 is along the direction of the inclined surface 305e and away from the reference plane. In this embodiment, the upper surface 301a of the substrate 301 (refer to...) Figure 6 Let 3 be the reference plane. The Z direction is a direction perpendicular to the reference plane (the upper surface 301a of the substrate 301). The second direction D2 is a direction along the inclined surface 305e and close to the reference plane (the upper surface 301a of the substrate 301).

[0086] Furthermore, in the following description, the direction along the inclined surface 305e and parallel to the first direction D1 (the direction parallel to the second direction D2) will be simply referred to as the direction along the inclined surface 305e. This direction is also the direction along the inclined surface 305e and the direction in which the distance from the reference plane (the upper surface 301a of the substrate 301) varies.

[0087] The MR element 50 has: a lower surface 50a opposite to the inclined surface 305e, an upper surface 50b opposite to the lower surface 50a, a first side surface 50c, and a second side surface 50d. The first side surface 50c connects the end of the lower surface 50a in a second direction D2 and the end of the upper surface 50b in a second direction D2. The second side surface 50d is positioned in front of the first side surface 50c when viewed from the first side surface 50c. The second side surface 50d connects the end of the lower surface 50a in a first direction D1 and the end of the upper surface 50b in a first direction D1.

[0088] The lower electrode 61 is located between the MR element 50 and the inclined surface 305e. The lower electrode 61 has: a lower surface 61a opposite to the inclined surface 305e, an upper surface 61b opposite to the lower surface 61a, and two side surfaces connecting the lower surface 61a and the upper surface 61b (see reference). Figure 6 Alternatively, the lower electrode 61 may be formed from the inclined surface 305e to the flat surface 305d. In this case, one of the two sides of the lower electrode 61 is disposed on the inclined surface 305e, and the other is disposed on the flat surface 305d. Alternatively, the lower electrode 61 may be entirely disposed on the inclined surface 305e. In this case, both sides of the lower electrode 61 are disposed on the inclined surface 305e.

[0089] The magnetic sensor 1 includes a first insulating portion 311 and a second insulating portion 312. Each of the first and second insulating portions 311 and 312 may be composed of a single insulating layer or multiple insulating layers. In this embodiment, specifically, each of the first and second insulating portions 311 and 312 is free... Figure 6 The insulating layers 306 and 308 shown are formed. In addition, each of the insulating layers 306 and 308 can be formed by a single insulating film or by multiple insulating films.

[0090] Since insulating layers 306 and 308 are each formed of insulating material, the first and second insulating portions 311 and 312 are also each formed of insulating material. For example, Al2O3 or SiO2 are used as the insulating material for forming each of the first and second insulating portions 311 and 312 (each of the insulating layers 306 and 308).

[0091] The first insulating portion 311 is disposed on a portion of the MR element 50. In this embodiment, in particular, the first insulating portion 311 is disposed on the first side surface 50c of the MR element 50 and a portion of the upper surface 50b of the MR element 50.

[0092] The second insulating portion 312, viewed from the first insulating portion 311, is disposed in front of another portion of the MR element 50 in the first direction D1. In this embodiment, in particular, the second insulating portion 312 is disposed on the second side surface 50d of the MR element 50 and another portion of the upper surface 50b of the MR element 50.

[0093] Upper electrode 62 (reference) Figure 7 The first insulating portion 311 and the second insulating portion 312 are disposed on the MR element 50 and electrically connected to the MR element 50. A portion of the first and second insulating portions 311 and 312 are interposed between the MR element 50 and the upper electrode 62. Another portion of the first and second insulating portions 311 and 312 are interposed between the lower electrode 61 and the upper electrode 62.

[0094] Thus far, the structural features of the magnetic sensor 1 have been described with regard to an inclined surface 305e (either a first inclined surface 305a or a second inclined surface 305b). In this embodiment, there are multiple first inclined surfaces 305a and multiple second inclined surfaces 305b. The above description of an inclined surface 305e also applies to each of the multiple first inclined surfaces 305a and multiple second inclined surfaces 305b.

[0095] Here, we focus on a first inclined surface 305a and a second inclined surface 305b included in a convex surface 305c, a first MR element 50B disposed on the first inclined surface 305a, and a second MR element 50C disposed on the second inclined surface 305b (see reference). Figure 6 The second insulating portion 312 disposed on a portion of the first MR element 50B and the second insulating portion 312 disposed on a portion of the second MR element 50C can also be a single, continuous insulating portion without division. In this embodiment, in particular, a continuous portion of the insulating layer 308 is formed over the first inclined surface 305a and the second inclined surface 305b.

[0096] Next, focusing on: two adjacent convex surfaces 305c in a direction parallel to the V direction, a first inclined surface 305a included in the convex surface 305c on the -V direction side, a second inclined surface 305b included in the convex surface 305c on the V direction side, a first MR element 50B disposed on the first inclined surface 305a, and a second MR element 50C disposed on the first second inclined surface 305b (see reference). Figure 6The first insulating portion 311 disposed on a portion of the first MR element 50B and the first insulating portion 311 disposed on a portion of the second MR element 50C can also be a single, continuous insulating portion without division. In this embodiment, in particular, a continuous portion of the insulating layer 308 is formed over the first inclined surface 305a and the second inclined surface 305b.

[0097] Although not shown, the first insulating portion 311 and the second insulating portion 312 may also be a single, continuous insulating portion. In this embodiment, in particular, the insulating layer 308 may be formed continuously over the plurality of first inclined surfaces 305a and the plurality of second inclined surfaces 305b. Furthermore, the insulating layer 306 may be formed continuously around the first MR element 50B over each of the plurality of first inclined surfaces 305a. Similarly, the insulating layer 306 may be formed continuously around the second MR element 50C over each of the plurality of second inclined surfaces 305b.

[0098] Next, the second example will be explained. Figure 9 This is a cross-sectional view showing the first and second insulating portions 311 and 312 in the second example. In the second example, the area of ​​the upper surface 50b of the MR element 50 covered by the first insulating portion 311 is larger than the area of ​​the upper surface 50b of the MR element 50 covered by the second insulating portion 312.

[0099] Next, the third example will be explained. Figure 10 This is a cross-sectional view showing the first and second insulating portions 311 and 312 in the third example. In the third example, the area of ​​the upper surface 50b of the MR element 50 covered by the second insulating portion 312 is larger than the area of ​​the upper surface 50b of the MR element 50 covered by the first insulating portion 311.

[0100] Next, the fourth example will be explained. Figure 11 This is a cross-sectional view showing the first and second insulating portions 311 and 312 in the fourth example. In the fourth example, the second insulating portion 312 covers the second side 50d of the MR element 50, but does not cover the upper surface 50b of the MR element 50.

[0101] Next, the function and effect of the magnetic sensor 1 in this embodiment will be explained. In this embodiment, insulating layers 306 and 308 are disposed around the MR element 50. The first and second insulating portions 311 and 312 are each formed by the insulating layers 306 and 308. It is known that the insulating portions (insulating layers) disposed around the MR element 50 affect the characteristics of the MR element 50. In this embodiment, the first insulating portion 311 is disposed on a portion of the MR element 50, and the second insulating portion 312 is disposed on another portion of the MR element 50. Therefore, according to this embodiment, the desired characteristics can be achieved.

[0102] The following explanation focuses on the sensitivity of the MR element 50 as an example of its characteristics. The free layer 53 exhibits shape anisotropy, with its easy magnetization axis parallel to the U direction. When no magnetic field is applied to the MR element 50, the magnetization direction of the free layer 53 is either the U direction or the -U direction. In this structure of the MR element 50, increasing the anisotropy of the free layer 53 in the direction orthogonal to the U direction makes it easier to change the magnetization direction of the free layer 53, resulting in improved sensitivity of the MR element 50.

[0103] For example, by forming the free layer 53 with a negative magnetostrictive magnetic layer and forming the first and second insulating portions 311 and 312 with an insulating layer that applies compressive stress to the free layer 53, the anisotropy of the free layer 53 in the direction orthogonal to the U direction can be increased. In this embodiment, specifically, the first insulating portion 311 is disposed on a portion of the MR element 50, and the second insulating portion 312 is disposed on another portion of the MR element 50. Furthermore, in this embodiment, specifically, at least one of the first and second insulating portions 311 and 312 is disposed on the upper surface 50b of the MR element 50. Thus, according to this embodiment, compared to the case where the first and second insulating portions 311 and 312 are not disposed on a portion of the MR element 50, the anisotropy of the free layer 53 in the direction orthogonal to the U direction can be increased, and the sensitivity of the MR element 50 can be improved.

[0104] Furthermore, the MR element 50 is formed on the inclined surface 305e. Due to limitations in the manufacturing process for forming the MR element 50, the first and second side surfaces 50c and 50d are each tapered. Therefore, the area of ​​the free layer 53 located at a position relative to the inclined surface 305e is smaller, and the length of the outer perimeter of the free layer 53 is also shorter. If the first and second insulating portions 311 and 312 are not disposed on a portion of the MR element 50, it is sometimes impossible to apply sufficient compressive stress to the free layer 53. In contrast, in this embodiment, as described above, the first and second insulating portions 311 and 312 are disposed on a portion of the MR element 50. Therefore, according to this embodiment, sufficient compressive stress can be applied to the free layer 53.

[0105] Furthermore, the magnitude of the compressive stress applied to the free layer 53 can be controlled by the amount by which the first and second insulating portions 311 and 312 climb onto the MR element 50, and by the structure of each of the first and second insulating portions 311 and 312. For example, when the first and second insulating portions 311 and 312 are each a three-layer structure of Al2O3 / SiO2 / Al2O3, the magnitude of the compressive stress can be adjusted by changing the ratio of the thicknesses of each layer.

[0106] Furthermore, when the compressive stress applied to the free layer 53 increases, the hysteresis of the sensitivity of the MR element 50 sometimes increases. As described above, the hysteresis of the sensitivity of the MR element 50 can be adjusted by controlling the magnitude of the compressive stress applied to the free layer 53.

[0107] Furthermore, up to this point, as Figure 7 As shown, the example is illustrated where the free layer 53 is positioned further away from the inclined surface 305e than the magnetized fixed layer 51. However, the structure of the MR element 50 is not limited to this case. Figure 7 In the example shown, the magnetization fixing layer 51 can also be disposed at a position further away from the inclined surface 305e than the free layer 53. In this case, the materials of the magnetization fixing layer 51, the first insulating portion 311, and the second insulating portion 312 can be selected in such a way that the magnetization direction of the magnetization fixing layer 51 remains unchanged. In this case, by disposing the first and second insulating portions 311 and 312 on a portion of the MR element 50, it is possible to suppress changes in the magnetization direction of the magnetization fixing layer 51 compared to the case where the first and second insulating portions 311 and 312 are not disposed on a portion of the MR element 50.

[0108] [Second Implementation]

[0109] Next, refer to Figure 12 The magnetic sensor 1 of the second embodiment of the present invention will be described. Figure 12 This is a cross-sectional view showing a portion of the magnetic sensor 1 according to this embodiment.

[0110] In this embodiment, the overall shape of each of the plurality of convex surfaces 305c of the insulating layer 305 is such that Figure 12 The triangular shape of the convex surface 305c shown is a triangular roof shape formed by moving it along a direction parallel to the U direction. Furthermore, the plurality of first inclined surfaces 305a and the plurality of second inclined surfaces 305b of the insulating layer 305 are each plane. Each of the plurality of first inclined surfaces 305a is a plane parallel to both the U and W1 directions. Each of the plurality of second inclined surfaces 305b is a plane parallel to both the U and W2 directions.

[0111] Insulation layer 305 and Figure 6 Similarly, the example shown may also include multiple protrusions forming multiple convex surfaces 305c. Alternatively, the insulating layer 305 may also include multiple grooves arranged in a direction parallel to the V direction. Each of the multiple grooves has a first wall surface corresponding to the first inclined surface 305a and a second wall surface corresponding to the second inclined surface 305b. A convex surface 305c is formed by the first wall surface of a groove and the second wall surface of another groove adjacent to that groove on the -V direction side.

[0112] In addition, Figure 12In the example shown, each of the multiple slots also has a bottom surface corresponding to the flat surface 305d. However, each of the multiple slots may also not have a bottom surface.

[0113] The other structures, functions, and effects of this embodiment are the same as those of the first embodiment.

[0114] Furthermore, the present invention is not limited to the embodiments described above, and various modifications can be made. For example, as long as the requirements of the claims are met, the shapes of the first and second insulating portions 311 and 312 are not limited to the examples shown in the embodiments, but are arbitrary.

[0115] Additionally, the magnetic sensor 1 may also include a third detection circuit configured to detect a component of the object's magnetic field in a direction parallel to the XY plane and generate at least one third detection signal corresponding to that component. In this case, the processor 40 may also be configured to generate a detection value corresponding to the component of the object's magnetic field in a direction parallel to the U direction, based on at least one third detection signal. The third detection circuit may be integrated with the first and second detection circuits 20 and 30, or it may be contained in a different chip than the first and second detection circuits 20 and 30.

[0116] As described above, the magnetic sensor of the present invention comprises: a substrate having a reference plane; a support member disposed on the substrate having at least one inclined surface inclined relative to the reference plane; at least one magnetic detection element disposed on at least one inclined surface; a first insulating portion made of insulating material disposed on a portion of at least one magnetic detection element; and a second insulating portion made of insulating material, which, when viewed from the first insulating portion, is disposed in front of another portion of at least one magnetic detection element in a direction along the direction of at least one inclined surface and away from the reference plane.

[0117] Alternatively, the magnetic sensor of the present invention may further include: an upper electrode disposed on at least one magnetic detection element, a first insulating portion, and a second insulating portion, and electrically connected to at least one magnetic detection element. Alternatively, the magnetic sensor of the present invention may further include: a lower electrode located between at least one magnetic detection element and at least one inclined surface, and electrically connected to at least one magnetic detection element.

[0118] Furthermore, in the magnetic sensor of the present invention, at least one magnetic detection element may also have: a lower surface facing at least one inclined surface, an upper surface opposite to the lower surface, and a first side surface and a second side surface connecting the lower surface and the upper surface. A first insulating portion may also be disposed at least on the first side surface. A second insulating portion may also be disposed at least on the second side surface. The first insulating portion may also be disposed on a portion of the upper surface of at least one magnetic detection element. The second insulating portion may also be disposed on a portion of the upper surface of at least one magnetic detection element. Alternatively, the second insulating portion may not be disposed on the upper surface of at least one magnetic detection element.

[0119] In addition, in the magnetic sensor of the present invention, at least one inclined surface may also be a curved surface. Alternatively, at least one inclined surface may also be a plane.

[0120] Furthermore, in the magnetic sensor of the present invention, at least one inclined surface may also include a first inclined surface and a second inclined surface facing different directions. At least one magnetic detection element may also include a first magnetic detection element disposed on the first inclined surface and a second magnetic detection element disposed on the second inclined surface. The support member may also have a convex surface extending away from the reference plane. The convex surface may also include a first inclined surface and a second inclined surface. The second insulating portion disposed on the first magnetic detection element and the second insulating portion disposed on the second magnetic detection element may also be a single insulating portion.

[0121] Furthermore, in the magnetic sensor of the present invention, at least one inclined surface may also include: a first inclined surface and a second inclined surface facing different directions. At least one magnetic detection element may also include: a first magnetic detection element disposed on the first inclined surface and a second magnetic detection element disposed on the second inclined surface. The support member may also have: a first convex surface and a second convex surface extending in a direction away from the reference plane, respectively. The first convex surface may also include the first inclined surface. The second convex surface may also include the second inclined surface. The first insulating portion disposed on the first magnetic detection element and the first insulating portion disposed on the second magnetic detection element may also be a single insulating portion.

[0122] Furthermore, in the magnetic sensor of the present invention, the first insulating portion and the second insulating portion may each include: a first insulating layer made of insulating material, and a second insulating layer made of insulating material and disposed on the first insulating layer. At least one magnetic detection element may also have: a lower surface facing at least one inclined surface, an upper surface opposite to the lower surface, and a first side surface and a second side surface connecting the lower surface and the upper surface. The first insulating layer may also be in contact with the first side surface and the second side surface.

[0123] As can be seen from the above description, various methods and variations of the present invention can be implemented. Therefore, within the equivalent scope of the claims, the present invention can be implemented even in ways other than the preferred methods described above.

Claims

1. A magnetic sensor, characterized in that, have: A substrate having a reference plane; A support member disposed on the substrate has at least one inclined surface that is inclined relative to the reference plane; At least one magnetic detection element is disposed on the at least one inclined surface; as well as An insulating portion made of insulating material is disposed on a portion of the at least one magnetic detection element.

2. The magnetic sensor according to claim 1, characterized in that, The insulating portion includes: a first portion that climbs onto a portion of the at least one magnetic detection element, and a second portion indicating the portion that does not climb onto the at least one magnetic detection element. The first portion has a protruding end located at the end of the insulating portion in a direction away from the reference plane. The thickness of the first portion decreases as it moves from the protruding end toward the opposite side of the second portion.

3. The magnetic sensor according to claim 1, characterized in that, The at least one magnetic detection element has: a lower surface facing the at least one inclined surface, an upper surface opposite to the lower surface, and a first side surface and a second side surface connecting the lower surface and the upper surface. The second side, viewed from the first side, is positioned in front of the at least one inclined surface in a direction away from the reference plane. The insulating portion is disposed at least on the first side.

4. The magnetic sensor according to claim 3, characterized in that, The insulating portion is also disposed on a portion of the upper surface of the at least one magnetic detection element.

5. The magnetic sensor according to claim 4, characterized in that, The insulating portion includes: a first portion indicating a part that has climbed onto the at least one magnetic detection element, and a second portion indicating a part that has not climbed onto the at least one magnetic detection element. The first portion has a protruding end located at the end of the insulating portion in a direction away from the reference plane. The thickness of the first portion decreases as it moves from the protruding end toward the opposite side of the second portion.

6. The magnetic sensor according to claim 1, characterized in that, The at least one magnetic detection element has: a lower surface facing the at least one inclined surface, an upper surface opposite to the lower surface, and a first side surface and a second side surface connecting the lower surface and the upper surface. The second side, viewed from the first side, is positioned in front of the at least one inclined surface in a direction away from the reference plane. The insulating portion is disposed at least on the second side.

7. The magnetic sensor according to claim 6, characterized in that, The insulating portion is also disposed on a portion of the upper surface of the at least one magnetic detection element.

8. The magnetic sensor according to claim 7, characterized in that, The insulating portion includes: a first portion indicating a portion that has climbed onto the at least one magnetic detection element, and a second portion indicating a portion that has not climbed onto the at least one magnetic detection element. The first portion has a protruding end located at the end of the insulating portion in a direction away from the reference plane. The thickness of the first portion decreases as it moves from the protruding end toward the opposite side of the second portion.

9. The magnetic sensor according to claim 6, characterized in that, The insulating portion is not disposed on the upper surface of the at least one magnetic detection element.

10. The magnetic sensor according to claim 1, characterized in that, It also includes: an upper electrode, which is disposed on the at least one magnetic detection element and the insulating portion, and is electrically connected to the at least one magnetic detection element.

11. The magnetic sensor according to claim 1, characterized in that, It also includes: a lower electrode, which is located between the at least one magnetic detection element and the at least one inclined surface, and is electrically connected to the at least one magnetic detection element.

12. The magnetic sensor according to claim 1, characterized in that, The at least one inclined surface includes: a first inclined surface and a second inclined surface facing different directions. The at least one magnetic detection element includes: a first magnetic detection element disposed on the first inclined surface, and a second magnetic detection element disposed on the second inclined surface. The support member has a convex surface extending away from the reference plane. The convex surface includes: a first inclined surface and a second inclined surface. The insulating portion disposed on the first magnetic detection element and the insulating portion disposed on the second magnetic detection element are a single insulating portion.

13. The magnetic sensor according to claim 1, characterized in that, The at least one inclined surface includes: a first inclined surface and a second inclined surface facing different directions. The at least one magnetic detection element includes: a first magnetic detection element disposed on the first inclined surface, and a second magnetic detection element disposed on the second inclined surface. The support member has a first convex surface and a second convex surface that extend in a direction away from the reference plane, respectively. The first convex surface includes the first inclined surface. The second convex surface includes the second inclined surface. The insulating portion disposed on the first magnetic detection element and the insulating portion disposed on the second magnetic detection element are a single insulating portion.

14. The magnetic sensor according to claim 1, characterized in that, The insulating portion includes: a first insulating layer made of insulating material, and a second insulating layer made of insulating material and disposed on the first insulating layer.

15. A magnetic sensor, characterized in that, have: A substrate having a reference plane; A support member disposed on the substrate has at least one inclined surface that is inclined relative to the reference plane; At least one magnetic detection element is disposed on the at least one inclined surface; A first insulating portion made of insulating material is disposed on a portion of the at least one magnetic detection element; as well as A second insulating portion is disposed on another portion of the at least one magnetic detection element. The at least one magnetic detection element has: a lower surface facing the at least one inclined surface, an upper surface opposite to the lower surface, and a first side surface and a second side surface connecting the lower surface and the upper surface. The first insulating portion is disposed at least on a portion of the upper surface and on the first side surface. The second insulating portion is disposed at least on another portion of the upper surface and on the second side surface. The area of ​​one portion of the upper surface is different from the area of ​​the other portion of the upper surface.

16. The magnetic sensor according to claim 15, characterized in that, Viewed from the first insulating portion, the second insulating portion is positioned in front of the first insulating portion in a direction along the at least one inclined surface and away from the reference plane.

17. The magnetic sensor according to claim 16, characterized in that, The at least one inclined surface includes: a first inclined surface and a second inclined surface facing different directions. The at least one magnetic detection element includes: a first magnetic detection element disposed on the first inclined surface, and a second magnetic detection element disposed on the second inclined surface. The support member has a convex surface extending away from the reference plane. The convex surface includes: a first inclined surface and a second inclined surface. The second insulating portion disposed on the first magnetic detection element and the second insulating portion disposed on the second magnetic detection element are a single insulating portion.

18. The magnetic sensor according to claim 16, characterized in that, The at least one inclined surface includes: a first inclined surface and a second inclined surface facing different directions. The at least one magnetic detection element includes: a first magnetic detection element disposed on the first inclined surface, and a second magnetic detection element disposed on the second inclined surface. The support member has a first convex surface and a second convex surface that extend in a direction away from the reference plane, respectively. The first convex surface includes the first inclined surface. The second convex surface includes the second inclined surface. The first insulating portion disposed on the first magnetic detection element and the first insulating portion disposed on the second magnetic detection element are a single insulating portion.

19. The magnetic sensor according to claim 15, characterized in that, The area of ​​one portion of the upper surface is greater than the area of ​​the other portion of the upper surface.

20. The magnetic sensor according to claim 19, characterized in that, Viewed from the first insulating portion, the second insulating portion is positioned in front of the first insulating portion in a direction along the at least one inclined surface and away from the reference plane.

21. The magnetic sensor according to claim 15, characterized in that, The area of ​​one portion of the upper surface is smaller than the area of ​​the other portion of the upper surface.

22. The magnetic sensor according to claim 21, characterized in that, Viewed from the first insulating portion, the second insulating portion is positioned in front of the first insulating portion in a direction along the at least one inclined surface and away from the reference plane.

23. The magnetic sensor according to claim 15, characterized in that, The first insulating portion and the second insulating portion each include: a first portion indicating that a part of the at least one magnetic detection element has climbed onto it, and a second portion indicating that a part of the at least one magnetic detection element has not climbed onto it. The first portion has a protruding end located at an end of the first portion in a direction away from the reference plane. The thickness of the first portion decreases as it moves from the protruding end toward the opposite side of the second portion.

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