Diagnostic imaging system and radiation detector therefor, method of manufacturing a radiation detector

Abstract

The application relates to a diagnostic imaging system and a radiation detector thereof and a preparation method of the radiation detector. The radiation detector comprises an anode assembly, a cathode assembly, a conversion assembly, a signal generator, an irradiation assembly, a first wiring part and a second wiring part. In the diagnostic imaging system, radiation passes through the cathode assembly and reaches the conversion assembly, visible light and / or infrared light is emitted by the irradiation assembly to irradiate the conversion assembly, the collection of electrons by the anode assembly, so that the signal generator detects the number change of the electrons at the contact position of the signal generator and the anode assembly, thereby being converted into a position signal of the radiation, the radiation after passing through an object to be imaged is detected, the metal thin electrode and the transparent electrode are transparent to the infrared light and / or the visible light, the attenuation of the electrodes to the light is reduced, and the stability of the radiation detector in a radiation use environment is improved by the above effects.

Description

Technical Field

[0001] This application relates to the field of radiation detection technology, and in particular to diagnostic imaging systems and their radiation detectors, as well as methods for preparing radiation detectors. Background Technology

[0002] Currently, computed tomography (CT) imaging equipment has become a commonly used auxiliary diagnostic tool in clinical medicine. Due to advancements in detector and electronics technology, photon counting CT (PCCT) is gradually becoming the next generation of CT technology. Compared to traditional CT, PCCT offers advantages such as high spatial resolution, high image contrast, and spectral imaging.

[0003] Photon counting detectors (PCDs) are fundamental to photon counting CT (PCCT). Currently, PCD materials commonly use semiconductor materials such as Si, GaAs, CdTe, and CdZnTe. However, these semiconductor materials contain numerous impurities or defects, leading to lower carrier mobility and causing polarization under high-dose or long-term operating conditions, resulting in unstable counting. These problems can be mitigated by infrared pre-irradiation.

[0004] In the existing technology, the structure of radiation detectors that can achieve infrared light illumination is mostly a multi-layer stacked structure. By allowing infrared light to directly pass through the electrodes and illuminate the radiation detector, the polarization can be improved and the photon counting can be stabilized.

[0005] However, the multi-layer stacked structure reduces the mechanical stability of the electrodes during use and may affect the electrical connection between different electrode layers. At the same time, the structure, due to its thickness, will attenuate a certain proportion of X-rays, reducing the performance of CT imaging systems with PCD detectors as components. Summary of the Invention

[0006] Based on this, it is necessary to address the problem that the multi-layer stacked structure in the existing technology reduces the mechanical stability of the electrodes during use, which may affect the electrical connection between different electrode layers. At the same time, the structure, due to its certain thickness, will attenuate a certain proportion of X-rays, reducing the performance of CT imaging systems with PCD detectors as components. Therefore, a diagnostic imaging system and its radiation detector, as well as a method for fabricating the radiation detector, are needed.

[0007] A radiation detector includes: an anode assembly, a cathode assembly, a conversion assembly, a signal generator, and an irradiation assembly. The signal generator, the anode assembly, the conversion assembly, and the cathode assembly are stacked sequentially. A high voltage is applied to the cathode assembly and the anode assembly. The irradiation assembly can emit visible light and / or infrared light to irradiate the conversion assembly. The conversion assembly receives externally radiated X-rays and converts the externally radiated X-rays into electric charges, wherein the electric charges can be collected by the anode assembly, and wherein electrons can be collected by the anode assembly.

[0008] The cathode assembly includes a transparent electrode and a thin metal electrode. One side of the thin metal electrode is attached to the transparent electrode, and the other side is attached to the side of the conversion assembly opposite to the anode assembly.

[0009] In practical use, both the first and second wiring terminals of the aforementioned radiation detector are high-voltage connection ports, providing high voltage to the entire detector. Radiation passes through the cathode assembly and reaches the conversion assembly. Visible and / or infrared light is emitted through the conversion assembly, causing the radiation to be converted into electrons and holes. These electrons and holes are then trapped in the trap energy levels, distorting the electric field and producing polarization. Infrared irradiation aims to excite charge carriers in the detector's trap energy levels, eliminating polarization and thus improving detector performance. The conversion component receives externally radiated X-rays and converts them into electrical charges. These charges are collected by the anode component, allowing the signal generator to detect changes in the number of electrons at the contact point with the anode component. This information is then converted into a radiation site signal for radiation detection. The QLED light source is made of quantum dot material, allowing for precise control of the wavelengths of visible and / or infrared light emitted by the QLED light source through size control. It can emit infrared light of a specified wavelength according to specific needs, accurately achieving depolarization of defect energy levels at different depths. The photoinduced quantum yield of the QLED light source is very high, reaching over 60%. A small amount of quantum dot material is sufficient to meet the requirements of the desired infrared light source, effectively reducing the thickness of the luminescent film and minimizing radiation absorption. This achieves depolarization without affecting the efficiency of the radiation detector. Meanwhile, the chemical and optical stability of QLED light source components makes them resistant to degradation, allowing for long-term use under X-ray irradiation. Additionally, the transparent electrodes are transparent to infrared and / or visible light, reducing the attenuation of these light sources by the electrodes. The addition of thin metal electrodes ensures the stability of high voltage intensity, further reducing the attenuation of these light sources by the electrodes. All these effects combined improve the stability of the radiation detector in radiation-using environments.

[0010] In one embodiment, the irradiation component includes a QLED light source capable of emitting visible light and / or infrared light to irradiate the conversion component;

[0011] Wherein, the QLED light source is attached to the side of the transparent electrode opposite to the conversion assembly; or

[0012] The QLED light source is located between the signal generator and the anode assembly; or

[0013] The QLED light source is located on the side of the conversion assembly.

[0014] In one embodiment, the radiation detector further includes an insulating adhesive, through which the QLED light source is attached to the side of the transparent electrode facing away from the conversion assembly.

[0015] In one embodiment, the material of the QLED light source includes one or more of PbSe / Te, PbS, InAs, and Cd3As2, and the wavelength of the visible light and / or infrared light emitted by the QLED light source is 600-1500nm.

[0016] In one embodiment, the irradiation component is an LED chip array, and the LED chip array is disposed on the transparent electrode.

[0017] In one embodiment, the illumination modes of the QLED light source include a first mode, a second mode, and a third mode;

[0018] When the QLED light source is in the first mode, the QLED light source continuously and uninterruptedly irradiates the conversion component throughout the entire radiation irradiation period;

[0019] When the QLED light source is in the second mode, the QLED light source illuminates the conversion component at a set frequency;

[0020] When the QLED light source is in the third mode, the QLED light source illuminates the conversion component before radiating it to the conversion component.

[0021] In one embodiment, the anode assembly includes a plurality of pixelated anode elements and a plurality of anode circuit connection portions that correspond one-to-one;

[0022] One side of the pixelated anode is connected to the conversion assembly, and the other side is connected to the anode circuit connection part. The side of the anode circuit connection part opposite to the pixelated anode is connected to the signal generator.

[0023] The plurality of pixelated anode elements are arranged in an array along the first direction and the second direction, respectively;

[0024] The first direction, the second direction, and the arrangement directions of the anode assembly and the cathode assembly are all perpendicular to each other.

[0025] A method for fabricating a radiation detector, the method comprising:

[0026] A conversion component is provided for receiving externally radiated X-rays and converting the externally radiated X-rays into electrical charges;

[0027] A thin metal electrode is deposited on one side of the conversion component; the thin metal electrode allows infrared and visible light to pass through.

[0028] A transparent electrode is deposited on the thin metal electrode; the transparent electrode is transparent to infrared light and / or visible light.

[0029] The anode assembly is electrically connected to the other side of the conversion assembly.

[0030] In one embodiment, an electrically insulating connection layer is disposed on the transparent electrode, and the QLED film is attached to the transparent electrode through the electrically insulating connection layer.

[0031] In practical use, the first and second wiring terminals of the radiation detector prepared by the above method are both ports of high-voltage connection lines, providing high voltage to the entire radiation detector. Radiation passes through the cathode assembly and reaches the conversion assembly. Visible and / or infrared light emitted by the conversion assembly irradiates the assembly, causing the radiation to be converted into electrons and holes. These electrons and holes are then trapped in the trap energy levels, distorting the electric field and producing polarization. The purpose of infrared irradiation is to excite charge carriers in the detector's trap energy levels, eliminating polarization and thus improving detector performance. The conversion component receives externally radiated X-rays and converts them into electrical charges. These charges are collected by the anode component, allowing the signal generator to detect changes in the number of electrons at the contact point with the anode component. This information is then converted into a radiation site signal for radiation detection. The QLED light source is made of quantum dot material, allowing for precise control of the wavelengths of visible and / or infrared light emitted by the QLED light source through size control. It can emit infrared light of a specified wavelength according to specific needs, accurately achieving depolarization of defect energy levels at different depths. The photoinduced quantum yield of the QLED light source is very high, reaching over 60%. A small amount of quantum dot material is sufficient to meet the requirements of the desired infrared light source, effectively reducing the thickness of the luminescent film and minimizing radiation absorption. This achieves depolarization without affecting the efficiency of the radiation detector. Meanwhile, the chemical and optical stability of QLED light source components makes them resistant to degradation, allowing for long-term use under X-ray irradiation. Additionally, the transparent electrodes are transparent to infrared and / or visible light, reducing the attenuation of these light sources by the electrodes. The addition of thin metal electrodes ensures the stability of high voltage intensity, further reducing the attenuation of these light sources by the electrodes. All these effects combined improve the stability of the radiation detector in radiation-using environments.

[0032] A diagnostic imaging system, the diagnostic imaging system comprising: a radiation source and a radiation detector (100).

[0033] The radiation source provides X-rays that penetrate the object to be imaged;

[0034] The radiation detector is used to detect X-rays that have passed through the object to be imaged;

[0035] The radiation detector includes an anode assembly, a cathode assembly, a conversion assembly, a signal generator, and an irradiation assembly;

[0036] The signal generator, the anode assembly, the conversion assembly, and the cathode assembly are stacked sequentially.

[0037] The cathode assembly includes a transparent electrode and a thin metal electrode. One side of the thin metal electrode is attached to the transparent electrode, and the other side is attached to the side of the conversion assembly opposite to the anode assembly.

[0038] A high voltage is applied to the cathode assembly and the anode assembly, and the irradiation assembly is capable of irradiating the conversion assembly with visible light and / or infrared light. The conversion assembly receives externally radiated X-rays and converts the externally radiated X-rays into electric charge, wherein the electric charge can be collected by the anode assembly.

[0039] In practical use, the first and second wiring terminals of the aforementioned diagnostic imaging system are both high-voltage connection ports, providing high voltage to the entire radiation detector. Radiation passes through the cathode assembly and reaches the conversion assembly, where it is irradiated with visible and / or infrared light. This irradiation converts the radiation into electrons and holes, which are then trapped in the trap levels, causing electric field distortion and polarization. Infrared irradiation aims to excite charge carriers in the detector's trap levels, eliminating polarization and thus improving detector performance. The conversion component receives externally radiated X-rays and converts them into electrical charges. These charges are collected by the anode component, allowing the signal generator to detect changes in the number of electrons at the contact point with the anode component. This information is then converted into a radiation site signal for radiation detection. The QLED light source is made of quantum dot material, allowing for precise control of the wavelengths of visible and / or infrared light emitted by the QLED light source through size control. It can emit infrared light of a specified wavelength according to specific needs, accurately achieving depolarization of defect energy levels at different depths. The photoinduced quantum yield of the QLED light source is very high, reaching over 60%. A small amount of quantum dot material is sufficient to meet the requirements of the desired infrared light source, effectively reducing the thickness of the luminescent film and minimizing radiation absorption. This achieves depolarization without affecting the efficiency of the radiation detector. Meanwhile, the chemical and optical stability of QLED light source components makes them resistant to degradation, allowing for long-term use under X-ray irradiation. Additionally, the transparent electrodes are transparent to infrared and / or visible light, reducing the attenuation of these light sources by the electrodes. The addition of thin metal electrodes ensures the stability of high voltage intensity, further reducing the attenuation of these light sources by the electrodes. All these effects combined improve the stability of the radiation detector in radiation-using environments. Attached Figure Description

[0040] Figure 1 This is a schematic diagram of a radiation detector according to one embodiment.

[0041] Figure 2 This is a schematic diagram of a radiation detector according to another embodiment.

[0042] Figure 3 This is a schematic diagram of a radiation detector according to yet another embodiment.

[0043] Figure 4 This is a schematic diagram of a radiation detector according to another embodiment.

[0044] Figure 5 This is a schematic diagram of a radiation detector located on the side of the conversion component, illuminating the component.

[0045] Figure 6 This is an exploded view of the thin film component, the pixelated anode component, and the anode circuit connection portion in one embodiment.

[0046] Figure 7 This is a schematic diagram of the illumination mode of the QLED light source for a radiation detector.

[0047] Explanation of icon numbers:

[0048] 100-Radiation Detector;

[0049] 110 - Anode assembly; 111 - Pixelated anode element; 112 - Anode circuit connection part;

[0050] 120 - Cathode assembly; 121 - Transparent electrode; 122 - Thin metal electrode;

[0051] 130 - Conversion Component;

[0052] 140 - Signal Generator;

[0053] 150 - Illumination component; 151 - QLED light source; 152 - Backlight; 153 - Thin film component;

[0054] 160 - Second wiring section; 161 - Insulating adhesive;

[0055] 200-radiation;

[0056] 210 - First Mode; 211 - Second Mode; 212 - Third Mode;

[0057] OX - First direction; OY - Second direction; OZ - Third direction. Detailed Implementation

[0058] To make the above-mentioned objectives, features, and advantages of this application more apparent and understandable, the specific embodiments of this application are described in detail below with reference to the accompanying drawings. Many specific details are set forth in the following description to provide a thorough understanding of this application. However, this application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar modifications without departing from the spirit of this application. Therefore, this application is not limited to the specific embodiments disclosed below.

[0059] In the description of this application, it should be understood that if terms such as "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential" appear, these terms indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application.

[0060] Furthermore, where the terms "first" and "second" appear, these terms are for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined with "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this application, where the term "multiple" appears, "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0061] In this application, unless otherwise expressly specified and limited, the terms "installation," "connection," "joining," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components, unless otherwise expressly limited. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0062] In this application, unless otherwise expressly specified and limited, the use of descriptions such as "above" or "below" the second feature indicates that the first and second features are in direct contact or indirect contact via an intermediate medium. Furthermore, "above," "on top of," and "over" the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. Similarly, "below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.

[0063] It should be noted that if an element is referred to as being "fixed to" or "set on" another element, it can be directly on the other element or there may be an intervening element. If an element is considered to be "connected to" another element, it can be directly connected to the other element or there may be an intervening element. If so, the terms "vertical," "horizontal," "upper," "lower," "left," "right," and similar expressions used in this application are for illustrative purposes only and do not represent the only possible implementation.

[0064] See Figure 1 , Figure 1 A schematic diagram of the structure of a radiation detector 100 according to an embodiment of the present application is shown. The radiation detector 100 provided in an embodiment of the present application includes: an anode assembly 110, a cathode assembly 120, a conversion assembly 130, a signal generator 140, and an irradiation assembly 150.

[0065] In the radiation detector 100 described above, the signal generator 140, anode assembly 110, conversion assembly 130, and cathode assembly 120 are stacked sequentially. The irradiation assembly 150 can emit visible light and / or infrared light to irradiate the conversion assembly 130. The conversion assembly 130 receives externally radiated X-rays and converts them into electrical charges, which can be collected by the anode assembly 110. The cathode assembly 120 includes a transparent electrode 121 and a thin metal electrode 122. One side of the thin metal electrode 122 is attached to the transparent electrode 121, and the other side is attached to the side of the conversion assembly 130 opposite to the anode assembly 110. The thickness of the thin metal electrode 122 is such that infrared and visible light can pass through the thin metal electrode 122, and infrared and visible light can pass through the transparent electrode 121.

[0066] The metal thin electrode 122 is made of Au, Pt or other metal materials, and the thickness of the metal thin electrode 122 is less than 100 nm to ensure that infrared and visible light can pass through and irradiate the semiconductor detector.

[0067] Specifically, a high voltage can be applied to the anode assembly 110 and the cathode assembly 120 through a first connection portion (not shown) and a second connection portion 160, wherein the first connection portion (not shown) is connected to the anode and the second connection portion 160 is connected to the transparent electrode 121. The radiation 200 includes X-rays.

[0068] In actual use, the radiation detector 100 described above allows radiation 200 to pass through the cathode assembly 120 and reach the conversion assembly 130. Visible and / or infrared light emitted by the irradiation assembly 150 then irradiates the conversion assembly 130, converting the radiation 200 into electrons and holes. Electrons are collected by the anode assembly 110, enabling the signal generator 140 to detect changes in the number of electrons at its contact point with the anode assembly 110. This change in electron quantity is then converted into a location signal of the radiation 200, thus enabling the detection of the radiation 200. Since the transparent electrode 121 is transparent to infrared and / or visible light, and the thickness of the thin metal electrode 122 allows infrared and visible light to pass through it, the addition of the thin metal electrode 122 ensures stable high voltage intensity, reduces electrode attenuation of these lights, and improves the stability of the radiation detector 100 in the environment where radiation 200 is used.

[0069] In one embodiment, the irradiation assembly 150 includes a QLED light source 151, which is capable of emitting visible light and / or infrared light to irradiate the conversion assembly 130. Specifically, the transparent electrode 121 can be attached to the conversion assembly 130 using conductive silver paste.

[0070] In this embodiment, during actual use, both the first and second wiring terminals 160 of the radiation detector 100 are ports of high-voltage connection lines, providing high voltage to the entire radiation detector 100. Radiation 200 passes through the cathode assembly 120 and reaches the conversion assembly 130. Visible light and / or infrared light emitted by the irradiation assembly 150 irradiate the conversion assembly 130, causing the radiation 200 to be converted into electrons and holes within the conversion assembly 130. These electrons are then captured by the trap energy level, causing electric field distortion and polarization. The purpose of infrared irradiation is to excite charge carriers in the detector's trap energy level, eliminating polarization and thus improving detector performance. The conversion component 130 receives externally radiated X-rays and converts them into electrical charges, which can be collected by the anode component 110. This allows the signal generator 140 to detect changes in the number of electrons at the contact point with the anode component 110, thereby converting them into a site signal of radiation 200 for detection. The QLED light source 151 is made of quantum dot material, allowing the wavelength of visible and / or infrared light emitted by the QLED light source 151 to be precisely controlled by controlling its size. It can emit infrared light of a specified wavelength according to specific needs, accurately achieving depolarization of defect energy levels at different depths. The photoinduced quantum yield of the QLED light source 151 is very high, reaching over 60%. A small amount of quantum dot material is sufficient to meet the requirements of the required infrared light source, effectively reducing the thickness of the luminescent film and reducing the absorption of radiation 200. This achieves the depolarization effect without affecting the efficiency of the radiation detector 100. Meanwhile, the chemical and optical stability of the QLED light source 151 makes it resistant to degradation and allows for long-term use under X-ray irradiation. The transparent electrode 121 is transparent to infrared and / or visible light, reducing the attenuation of these lights by the electrodes. The addition of the thin metal electrode 122 ensures the stability of the high voltage intensity and reduces the attenuation of these lights by the electrodes. All these effects together improve the stability of the radiation detector 100 in the radiation 200 operating environment.

[0071] Specifically, the signal generator 140 is a signal readout chip used to count electron sites, thereby converting the electron site technical signal into radiation 200 irradiation information, and thus detecting X-rays.

[0072] Specifically, the conversion component 130 is a semiconductor conversion component 130, that is, a direct conversion crystal, such as a CdTe crystal or a CZT crystal, or other materials.

[0073] Specifically, the transparent electrode 121 is a conductive high-voltage material, preferably a transparent oxide semiconductor (TCO) material such as ITO (indium tin oxide) or ZnO:Al, so that the transparent electrode 121 is transparent to infrared light and / or visible light.

[0074] In one embodiment, the thin metal electrode 122 is connected to the conversion component 130 via either chemical vapor deposition or physical vapor deposition. A transparent electrode 121 is deposited onto the thin metal electrode 122 via either molecular beam epitaxy, chemical vapor deposition, or laser pulse deposition. Thus, by depositing the thin metal electrode 122 onto the conversion component 130 and the transparent electrode 121 onto the thin metal electrode 122 in the aforementioned manner, the thicknesses of the transparent electrode 121 and the thin metal electrode 122 are sufficient to allow infrared and visible light to pass through, while achieving depolarization while saving material.

[0075] See Figure 1 In one embodiment, the QLED light source 151 is attached to the side of the transparent electrode 121 facing away from the conversion assembly 130.

[0076] See Figure 4 In another embodiment, the QLED light source 151 is located between the signal generator 140 and the anode assembly 110.

[0077] See Figure 5 In another embodiment, the QLED light source 151 is located on the side of the conversion assembly 130 to achieve overall illumination.

[0078] In other embodiments, one QLED light source 151 is attached to the side of the transparent electrode 121 away from the conversion assembly 130, and the other QLED light source 151 is located between the signal generator 140 and the anode assembly 110.

[0079] In the above embodiments, various positions of the QLED light source 151 relative to the conversion component 130 are listed so that infrared light and / or visible light illuminate the conversion component 130, ultimately improving polarization, stabilizing photon counting, and improving the stability of the radiation detector 100 in the radiation 200 environment.

[0080] See Figure 3 In one embodiment, the radiation detector 100 further includes an insulating adhesive 161, through which the QLED light source element 151 is attached to the side of the transparent electrode 121 facing away from the conversion assembly 130. The insulating adhesive 161 attaches the QLED light source element 151 to the transparent electrode 121, achieving an insulating effect and improving polarization.

[0081] Preferably, the irradiation assembly 150 further includes a backlight 152, which is attached to the side of the QLED light source 151 away from the conversion assembly 130. When the quantum dot material in the QLED light source 151 is excited by the backlight 152, it emits infrared light and / or visible light of a specific wavelength.

[0082] See Figure 2 and Figure 6In one embodiment, the QLED light source 151 includes a plurality of thin film elements 153. The thin film elements 153 are strip-shaped, and the plurality of thin film elements 153 extend along a first direction OX and are uniformly arranged along a second direction OY, wherein the first direction OX, the second direction OY, and the arrangement directions of the anode assembly 110 and the cathode assembly 120 are perpendicular to each other.

[0083] In another embodiment, the thin film 153 is sheet-shaped, and multiple thin film 153 are arranged in an array along the first direction OX and the second direction OY, respectively, wherein the first direction OX, the second direction OY and the third direction OZ are perpendicular to each other, and the third direction OZ is the arrangement direction of the anode assembly 110 and the cathode assembly 120.

[0084] In the above embodiments, instead of using a whole QLED light source element 151 film attached to the transparent electrode 121, the whole QLED light source element 151 film is divided into multiple square or circular sheet-like thin film elements 153, which are attached to the transparent electrode 121. Each thin film element 153 can be projected onto the anode assembly 110 along the third direction OZ. Specifically, when the anode assembly 110 includes multiple pixelated anode elements 111 and multiple anode circuit connection portions 112, each thin film element 153 can cover one or more corresponding sheet-like pixelated anode elements 111 along the third direction OZ. For example, a thin film element 153 extending along the first direction OX can cover multiple sheet-like pixelated anode elements 111 arranged along the first direction OX. The main purpose is to enable the radiation 200 along the third direction OZ to be positioned by the pixelated anode elements 111 corresponding to the thin film element 153. The specific distance between the thin film components 153 should meet the required depolarization effect in order to balance the depolarization effect and save materials.

[0085] In one embodiment, the QLED light source 151 is made of one or more of PbSe / Te, PbS, InAs, and Cd3As2, and the wavelength of the visible light and / or infrared light emitted by the QLED light source 151 is 600-1500nm.

[0086] Preferably, the wavelength of the visible light and / or infrared light emitted by the QLED light source 151 is 800 nm.

[0087] The materials of the aforementioned QLED and the wavelengths of the emitted visible and / or infrared light can improve the degree of depolarization and ensure the stability of the radiation detector 100.

[0088] In one embodiment, the irradiation component 150 is an LED chip array, and the LED chip array is disposed on the transparent electrode 121. The LED array light source is fabricated based on micro-LED technology. The LED array can be formed by splicing multiple pre-packaged LED chips, or it can be obtained by depositing a light-emitting PN junction array on a GaAs or GaN substrate. This array surface light source can emit light with a wavelength of 600-1500nm. The LED chip array includes: a P-type semiconductor, a quantum well layer, an N-type semiconductor, a substrate, and a base layer, which are sequentially stacked along the direction close to the conversion component 130. Under an applied electric field, electrons and holes in the P-type and N-type semiconductors recombine and emit light.

[0089] See Figure 7 In one embodiment, the illumination modes of the QLED light source 151 include a first mode 210, a second mode 211, and a third mode 212. When the QLED light source 151 is in the first mode 210, the conversion component 130 is continuously and uninterruptedly illuminated during the entire illumination period of the radiation 200. When the QLED light source 151 is in the second mode 211, the QLED light source 151 illuminates the conversion component 130 at a set frequency. When the QLED light source 151 is in the third mode 212, the QLED light source 151 illuminates the conversion component 130 before the radiation 200 illuminates it. Specifically, the illumination modes of the QLED light source 151 also include other modes, which will not be elaborated here, such as changing the set frequency during the illumination process.

[0090] The aforementioned multiple illumination modes allow the visible light and / or infrared light emitted by the QLED light source 151 to illuminate the conversion component 130 in the form of light pulses. This allows different illumination light pulses, i.e. different modes, to be set according to the polarization degree of the conversion component 130, in order to achieve the depolarization effect.

[0091] See Figure 6 In one embodiment, the anode assembly 110 includes a plurality of pixelated anode elements 111 and a plurality of anode circuit connection portions 112, each corresponding to a pixelated anode element 111. One side of each pixelated anode element 111 is connected to the conversion assembly 130, and the other side is connected to the anode circuit connection portion 112. The side of the anode circuit connection portion 112 facing away from the pixelated anode element 111 is connected to the signal generator 140, and a first wiring portion is connected to the anode circuit connection portion 112. The plurality of pixelated anode elements 111 are arranged in an array along a first direction OX and a second direction OY, respectively. The first direction OX, the second direction OY, and the arrangement directions of the anode assembly 110 and the cathode assembly 120 are perpendicular to each other.

[0092] In this embodiment, the anode circuit connection part 112 is a solder ball, that is, solder is used to connect the pixelated anode part 111 to the signal generator 140 through flip-chip soldering technology, so that the anode-related photons and electronic signals can be transmitted to the signal generator 140 to detect radiation 200.

[0093] The connection between the first wiring part and the anode assembly 110 can take many forms, such as leading a connecting line from the anode circuit connection part 112 and connecting multiple connecting lines to the first wiring part, or leading a connecting line from the pixelated anode part 111. The specific connection form is not limited here.

[0094] A method for fabricating a radiation detector, the method comprising:

[0095] A conversion component 130 is provided for receiving externally radiated X-rays and converting the externally radiated X-rays into electrical charges.

[0096] A thin metal electrode 122 is deposited on one side of the conversion component 130. The thin metal electrode 122 allows infrared and visible light to pass through.

[0097] A transparent electrode 121 is deposited on a thin metal electrode 122. The transparent electrode 121 is transparent to infrared light and / or visible light.

[0098] In actual use, the radiation detector 100 prepared by the above method transmits radiation 200 through the cathode assembly 120 and reaches the conversion assembly 130. The radiation 200 is then converted into electrons and holes by the visible light and / or infrared light emitted by the irradiation assembly 150. Electrons are collected by the anode assembly 110, allowing the signal generator 140 to detect changes in the number of electrons at its contact point with the anode assembly 110. This change in electron quantity is then converted into a positional signal of the radiation 200, enabling the detection of the radiation 200. Since the transparent electrode 121 is transparent to infrared and / or visible light, and the thickness of the thin metal electrode 122 is sufficient for infrared and visible light to pass through it, the addition of the thin metal electrode 122 ensures stable high voltage intensity, reduces electrode attenuation of these lights, and improves the stability of the radiation detector 100 in the environment where the radiation 200 is used.

[0099] On the other side of the conversion component 130, the anode component 110 is electrically connected.

[0100] In one embodiment, the method for fabricating the radiation detector further includes:

[0101] An electrically insulating connection layer is provided on the transparent electrode 121, and the QLED film is attached to the transparent electrode 121 through the electrically insulating connection layer. The QLED light source 151 is attached to the transparent electrode 121 through insulating adhesive 161, achieving an insulating effect and improving polarization.

[0102] This application also provides a diagnostic imaging system, which includes a radiation source and a radiation detector 100. The radiation source provides radiation 200 that passes through the object to be imaged, and the detector detects the radiation 200 after it has passed through the object. The radiation detector 100 includes an anode assembly 110, a cathode assembly 120, a conversion assembly 130, a signal generator 140, and an illumination assembly 150.

[0103] The signal generator 140, the anode assembly 110, the conversion assembly 130, and the cathode assembly 120 are stacked sequentially.

[0104] The cathode assembly 120 includes a transparent electrode 121 and a thin metal electrode 122. One side of the thin metal electrode 122 is attached to the transparent electrode 121, and the other side is attached to the side of the conversion assembly 130 opposite to the anode assembly 110.

[0105] A high voltage is applied to the cathode assembly 120 and the anode assembly 110, and the irradiation assembly 150 is able to emit visible light and / or infrared light to irradiate the conversion assembly 130. The conversion assembly 130 receives externally radiated X-rays and converts the externally radiated X-rays into electric charge, which can be collected by the anode assembly 110.

[0106] In practical use, the aforementioned diagnostic imaging system transmits radiation 200 through the cathode assembly 120 and reaches the conversion assembly 130. Visible and / or infrared light emitted by the irradiation assembly 150 irradiates the conversion assembly 130, where radiation 200 is converted into electrons and holes. Electrons are collected by the anode assembly 110, allowing the signal generator 140 to detect changes in the number of electrons at its contact point with the anode assembly 110. This change in electron quantity is then converted into a location signal of radiation 200, enabling detection of radiation 200. Since the transparent electrode 121 is transparent to infrared and / or visible light, and the thickness of the thin metal electrode 122 allows infrared and visible light to pass through it, the addition of the thin metal electrode 122 ensures stable high voltage intensity, reduces electrode attenuation of these lights, and improves the stability of the radiation detector 100 in the environment where radiation 200 is used.

[0107] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0108] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the patent application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this patent application should be determined by the appended claims.

Claims

1. A radiation detector, characterized in that, The radiation detector (100) includes: an anode assembly (110), a cathode assembly (120), a conversion assembly (130), a signal generator (140), and an irradiation assembly (150). The signal generator (140), the anode assembly (110), the conversion assembly (130), and the cathode assembly (120) are stacked sequentially. A high voltage is applied to the cathode assembly (120) and the anode assembly (110). The irradiation assembly (150) can emit visible light and / or infrared light to irradiate the conversion assembly (130). The conversion assembly (130) receives externally radiated X-rays and converts the externally radiated X-rays into electric charge, wherein the electric charge can be collected by the anode assembly (110). The cathode assembly (120) includes a transparent electrode (121) and a thin metal electrode (122); one side of the thin metal electrode (122) is attached to the transparent electrode (121), and the other side is attached to the side of the conversion assembly (130) opposite to the anode assembly (110).

2. The radiation detector according to claim 1, characterized in that, The irradiation assembly (150) includes a QLED light source (151) that is capable of emitting visible light and / or infrared light to irradiate the conversion assembly (130). Wherein, the QLED light source (151) is attached to the side of the transparent electrode (121) facing away from the conversion assembly (130); or The QLED light source (151) is located between the signal generator (140) and the anode assembly (110); or The QLED light source (151) is located on the side of the conversion assembly (130).

3. The radiation detector according to claim 2, characterized in that, The radiation detector (100) also includes an insulating adhesive (161), through which the QLED light source (151) is attached to the transparent electrode (121) on the side away from the conversion assembly (130).

4. The radiation detector according to claim 2, characterized in that, The material of the QLED light source (151) includes one or more of PbSe / Te, PbS, InAs, and Cd3As2; the wavelength of the visible light and / or infrared light emitted by the QLED light source (151) is 600-1500nm.

5. The radiation detector according to claim 2, characterized in that, The irradiation component (150) is an LED chip array, and the LED chip array is disposed on the transparent electrode (121).

6. The radiation detector according to any one of claims 2-4, characterized in that, The illumination modes of the QLED light source (151) include a first mode (210), a second mode (211), and a third mode (212). When the QLED light source (151) is in the first mode (210), the QLED light source (151) continuously irradiates the conversion component (130) throughout the entire radiation irradiation period. When the QLED light source (151) is in the second mode (211), the QLED light source (151) illuminates the conversion component (130) at a set frequency. When the QLED light source (151) is in the third mode (212), the QLED light source (151) irradiates the conversion component (130) before irradiating the conversion component (130).

7. The radiation detector according to claim 1, characterized in that, The anode assembly (110) includes a plurality of pixelated anode elements (111) and a plurality of anode circuit connection parts (112) that correspond one-to-one. One side of the pixelated anode (111) is connected to the conversion assembly (130), and the other side is connected to the anode circuit connection part (112). The side of the anode circuit connection part (112) facing away from the pixelated anode (111) is connected to the signal generator (140). The plurality of pixelated anode elements (111) are arranged in an array along a first direction (OX) and a second direction (OY); The first direction (OX), the second direction (OY), and the arrangement directions of the anode assembly (110) and the cathode assembly (120) are perpendicular to each other.

8. A method for manufacturing a radiation detector, characterized in that, The method for manufacturing the radiation detector includes: A conversion component (130) is provided for receiving externally radiated X-rays and converting the externally radiated X-rays into electrical charges; A thin metal electrode (122) is deposited on one side of the conversion assembly (130); the thin metal electrode (122) allows infrared and visible light to pass through; A transparent electrode (121) is deposited on the thin metal electrode (122); the transparent electrode (121) is transparent to infrared light and / or visible light; On the other side of the conversion assembly (130), the anode assembly (110) is electrically connected.

9. The method for preparing a radiation detector according to claim 8, characterized in that, Also includes: An electrically insulating connection layer is provided on the transparent electrode (121), and the QLED film is attached to the transparent electrode (121) through the electrically insulating connection layer.

10. A diagnostic imaging system, the diagnostic imaging system comprising: Radiation source and radiation detector (100); The radiation source provides X-rays that penetrate the object to be imaged; The radiation detector (100) is used to detect X-rays that have passed through the object to be imaged; The radiation detector (100) is characterized in that it includes an anode assembly (110), a cathode assembly (120), a conversion assembly (130), a signal generator (140), and an irradiation assembly (150). The signal generator (140), the anode assembly (110), the conversion assembly (130), and the cathode assembly (120) are stacked sequentially. The cathode assembly (120) includes a transparent electrode (121) and a thin metal electrode (122). One side of the thin metal electrode (122) is attached to the transparent electrode (121), and the other side is attached to the side of the conversion assembly (130) opposite to the anode assembly (110). A high voltage is applied to the cathode assembly (120) and the anode assembly (110), and the irradiation assembly (150) is able to emit visible light and / or infrared light to irradiate the conversion assembly (130), the conversion assembly (130) receives externally radiated X-rays and converts the externally radiated X-rays into electric charge, wherein the electric charge can be collected by the anode assembly (110).

Images