High-temperature-resistant resistance element

Abstract

The present application provides a kind of high temperature resistance resistance element, it includes: a substrate layer, a first surface electrode layer and second surface electrode layer.The first surface electrode layer is arranged in the first surface of the substrate layer, the resistance layer is partially covered on the first electrode layer and the substrate layer, the second surface electrode layer is arranged in alignment with the first surface electrode layer and covered on the first surface electrode layer and the resistance layer, so that the resistance layer is clamped between the first electrode layer and the second electrode layer, the first surface electrode layer, the resistance layer and the second surface electrode layer form composite structure to inhibit the resistance value variation of the high temperature resistance resistance element at high temperature.

Description

Technical Field

[0001] This invention relates to a thin-film resistor, and more particularly to a high-temperature resistant thin-film resistor with a composite electrode structure. Background Technology

[0002] As product performance requirements increase, passive components need to have a wide operating temperature range to be used in harsh environments, high-temperature production lines, or high-power modules. However, due to limitations in material properties, traditional passive components suffer from technical problems such as short service life and high losses at high temperatures.

[0003] For example, the operating temperature of traditional thin film resistors is generally between 20 and 150°C. At high temperatures above 150°C, due to the different temperature coefficients of resistance and thermal expansion rates of the various film layers of the thin film resistor, and the high resistance value of the metal electrode layer at high temperatures, the thin film resistor often experiences thermal deformation and resistance value drift, which reduces the accuracy and reliability of the thin film resistor and limits its welding, rework, baking and application by temperature. Summary of the Invention

[0004] In view of this, the present invention provides a technical means for high-temperature resistant thin-film resistors with composite electrode structures, which can effectively reduce the resistance value deviation of thin-film resistors above 150°C, as detailed below.

[0005] This invention provides a high-temperature resistant resistive element, comprising: a substrate layer, a first electrode layer, a resistive layer, and a second electrode layer. The first electrode layer is disposed on a first surface of the substrate layer. The resistive layer partially covers the first electrode layer and the substrate layer. The second electrode layer is aligned with and covers the first electrode layer and the resistive layer, such that the resistive layer is sandwiched between the first electrode layer and the second electrode layer. The first electrode layer, the resistive layer, and the second electrode layer form a composite structure to suppress the change in resistance value of the high-temperature resistant resistive element at high temperatures.

[0006] Preferably, the high-temperature resistant resistor further includes: a back electrode layer disposed on the second surface of the substrate and corresponding to the first surface electrode layer.

[0007] Preferably, the high-temperature resistant resistive element further includes: a protective layer disposed relative to the resistive layer and covering the second electrode layer and the resistive layer.

[0008] Preferably, the protective layer is epoxy resin.

[0009] Preferably, the high-temperature resistant resistive element further comprises: a first side electrode layer, the first side electrode layer partially covering a protective layer, a second surface electrode layer, a first surface electrode layer, a substrate layer, and a back electrode layer.

[0010] Preferably, the high-temperature resistant resistive element further includes a second side electrode layer that covers the first side electrode layer.

[0011] Preferably, the first side electrode layer is nickel.

[0012] Preferably, the second electrode layer is tin.

[0013] Preferably, the resistive layer is a nickel-chromium alloy or a silicon-chromium alloy.

[0014] Preferably, the high-temperature resistant resistor component is a thin-film resistor.

[0015] The high-temperature resistant resistor element of the present invention can effectively improve the temperature resistance, prevent the resistance value from drifting, and maintain the accuracy and reliability of the resistance value for a long time in a high-temperature environment. Attached Figure Description

[0016] Figure 1 This is one embodiment of the high-temperature resistant resistor element of the present invention.

[0017] Figure 2 yes Figure 1 The high-temperature resistant resistive element is shown in a cross-sectional view taken along line A-A', and is provided with a first side electrode layer and a second side electrode layer.

[0018] Figure 3 This is a flowchart of the manufacturing method of the high-temperature resistant resistor element of the present invention.

[0019] Attached icon number

[0020] 1: High-temperature resistant resistors

[0021] 10: Substrate layer

[0022] 20: Composite structure

[0023] 21: First electrode layer

[0024] 22: Second electrode layer

[0025] 30: Resistive layer

[0026] 40: Protective layer

[0027] 50: First side electrode layer

[0028] 60: Second side electrode layer

[0029] 70: Back electrode layer

[0030] A-A': line

[0031] S100~S107: Steps Detailed Implementation

[0032] The following embodiments, in conjunction with the accompanying drawings, are used to illustrate the spirit of the present invention, enabling those skilled in the art to clearly understand the technology of the present invention. However, they are not intended to limit the scope of the present invention, and the scope of the patent right of the present invention should be defined by the claims. It is particularly emphasized that the drawings are for illustrative purposes only and do not represent the actual size or quantity of the components. Some details may not be fully drawn in order to achieve the simplicity of the drawings.

[0033] For the sake of simplicity, a rectangular resistor is used as an example, but it should be understood that it is used as an example and not to limit the invention. The high-temperature resistant resistor element of the present invention can be implemented in any shape.

[0034] Please refer to the following: Figures 1 to 3 , Figure 1 This is one embodiment of the high-temperature resistant resistive element of the present invention. Figure 2 yes Figure 1 The high-temperature resistant resistive element is shown in a cross-sectional view taken along line A-A', and includes a first side electrode layer and a second side electrode layer. Figure 3 This is a flowchart of the manufacturing method of the high-temperature resistant resistor element of the present invention.

[0035] This invention provides a high-temperature resistant resistor element 1, comprising: a substrate layer 10, a first electrode layer 21, a resistive layer 30, a second electrode layer 22, a back electrode layer 70, a protective layer 40, a first side electrode layer 50, and a second side electrode layer 60. A composite structure 20 is formed by the first electrode layer 21, the second electrode layer 22, the resistive layer 30, and the protective layer 40 to increase the temperature resistance of the resistor and suppress the change in resistance value of the high-temperature resistant resistor element 1 at high temperatures. Preferably, the high-temperature resistant resistor element 1 is a thin-film resistor.

[0036] The manufacturing method of the high-temperature resistant resistor element 1 of the present invention is as follows:

[0037] Step S100: Set substrate layer 10. The material of substrate layer 10 can be alumina with a purity of 96% to 99%.

[0038] In step S101, a first surface electrode layer 21 and a back electrode layer 70 are printed on the substrate layer 10 and sintered at 850°C, such that the first surface electrode layer 21 is disposed on the first surface of the substrate layer 10, and the back electrode layer 70 is disposed on the second surface of the substrate and corresponds to the first surface electrode layer 21. The material of the first surface electrode layer 21 can be the same as the material of the back electrode layer 70, and the materials of the first surface electrode layer 21 and the second surface electrode layer 22 can be selected from silver or copper, respectively.

[0039] In step S102, a mask layer is printed on the substrate layer 10 and the first electrode layer 21, and a resistive layer 30 is deposited with metal. Then, an annealing process is performed and the mask layer is removed, so that the resistive layer 30 partially covers the first electrode layer and the substrate layer 10. The material of the resistive layer 30 can be selected from nickel-chromium alloy or silicon-chromium alloy.

[0040] In step S103, a second electrode layer 22 is printed on the first electrode layer 21 and the resistor layer 30, and then sintered at 850°C. The second electrode layer 22 is aligned with the first electrode layer 21 and covers the first electrode layer 21 and the resistor layer 30, such that the resistor layer 30 is sandwiched between the first electrode layer and the second electrode layer. The material of the second electrode layer 22 can be the same as that of the first electrode layer 21, and the material of the second electrode layer 22 can be silver or copper.

[0041] In some embodiments, the thickness ratio of the first surface electrode layer 21, the second surface electrode layer 22, and the back electrode layer 70 is 1:1:1.

[0042] In some embodiments, the thickness of the resistive layer 30 is less than the thickness of the first electrode layer 21 and the second electrode layer 22 to define a groove.

[0043] Step S104: Based on the required resistance value, laser scribing is performed on the resistive layer 30 to correct the resistance.

[0044] In step S105, a protective layer 40 is printed on the second electrode layer 22 and the resistor layer 30, and then cured. The protective layer 40 is disposed relative to the resistor layer 30 and covers the second electrode layer and the resistor layer 30. The size of the protective layer 40 can be equal to or larger than the resistor layer 30, and it partially fills the groove to form a composite structure 20, thereby improving the overall thermal stability of the high-temperature resistant resistor element 1 at high temperatures. The material of the protective layer 40 can be epoxy resin.

[0045] Step S106: Electroplating a first side electrode on the end surfaces of the protective layer 40, the second surface electrode layer 22, the first surface electrode layer 21, the substrate layer 10, and the back electrode layer 70, so that the first side electrode layer 50 partially covers the protective layer 40, the second surface electrode layer 22, the first surface electrode layer 21, the substrate layer 10, and the back electrode layer 70. The first side electrode layer 50 may be nickel.

[0046] Step S107: Electroplating a second side electrode on the first side electrode, so that the second side electrode layer 60 completely covers the first side electrode layer 50. The second side electrode layer 60 may be tin.

[0047] The printing, sintering, deposition, and annealing processes used in this invention can be performed using known technologies to achieve the same effect. For the sake of brevity, this invention will not be described in detail.

[0048] To test the temperature resistance of the high-temperature resistant resistor element of the present invention, a conventional thin-film resistor lacking the composite structure 20 of the present invention was used as a comparative example. The high-temperature resistant resistor element of the present invention was used as an embodiment. The resistance value changes of two resistors with a resistance value of 10KΩ were measured at 150 to 350°C. The experimental results are shown in Table 1.

[0049] [Table 1]

[0050]

[0051] Therefore, the high-temperature resistant resistor element of the present invention effectively improves the temperature resistance capability, and the resistance value change is 2-10% between 150 and 350°C, preventing the resistance value from drifting and maintaining the accuracy and reliability of the resistance value for a long time in high-temperature environments.

Claims

1. A high-temperature resistant resistive element, characterized in that, It includes: Substrate layer; A first electrode layer is disposed on a first surface of the substrate layer; A resistive layer partially covers the first electrode layer and the substrate layer; as well as The second electrode layer is aligned with the first electrode layer and covers the first electrode layer and the resistor layer, such that the resistor layer is sandwiched between the first electrode layer and the second electrode layer. The first electrode layer, the resistor layer, and the second electrode layer form a composite structure to suppress the change in resistance value of the high-temperature resistant resistor element at high temperatures.

2. The high-temperature resistant resistive element as described in claim 1, characterized in that, It further includes: a back electrode layer disposed on a second surface of the substrate and corresponding to the first surface electrode layer.

3. The high-temperature resistant resistive element as described in claim 2, characterized in that, It further includes: a protective layer disposed relative to the resistive layer and covering the second electrode layer and the resistive layer.

4. The high-temperature resistant resistive element as described in claim 3, characterized in that, The protective layer is made of epoxy resin.

5. The high-temperature resistant resistive element as described in claim 3, characterized in that, It further includes: a first side electrode layer, which partially covers the protective layer, the second surface electrode layer, the first surface electrode layer, the substrate layer and the back electrode layer.

6. The high-temperature resistant resistive element as described in claim 3, characterized in that, It further includes: a second side electrode layer that covers the first side electrode layer.

7. The high-temperature resistant resistive element as described in claim 6, characterized in that, The first side electrode layer is made of nickel.

8. The high-temperature resistant resistive element as described in claim 6, characterized in that, The second side electrode layer is made of tin.

9. The high-temperature resistant resistive element as described in claim 1, characterized in that, The resistive layer is made of nickel-chromium alloy or silicon-chromium alloy.

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