A microwave annealing apparatus, an annealing method, and a semiconductor process equipment

Abstract

The application discloses a microwave annealing device, an annealing method and a semiconductor process equipment. The microwave annealing device comprises an annealing chamber, a plurality of bearing tables are arranged in the annealing chamber and are spaced apart along a first direction; the bearing table is used for bearing a component to be annealed; a multilayer microwave generating array is distributed in at least two layers along the first direction, and each layer of the microwave generating array comprises a plurality of microwave generating modules which are distributed along a circumferential direction of the annealing chamber; and a control module is electrically connected with each microwave generating module and is used for controlling the microwave energy beams output by each microwave generating module in each layer of the microwave generating array to move along a preset path by adjusting the phases of the microwave output by each microwave generating module, so that the component to be annealed is scanned and heated. The application provides a microwave annealing device, an annealing method and a semiconductor process equipment, can simultaneously heat a plurality of components to be annealed, can also ensure the annealing uniformity of each component to be annealed, and improves the processing efficiency and the processing yield of the component to be annealed.

Description

Technical Field

[0001] This invention relates to the field of semiconductor manufacturing technology, and in particular to a microwave annealing apparatus, annealing method, and semiconductor process equipment. Background Technology

[0002] Ion implantation, a crucial process for introducing specific impurities into semiconductor wafers to alter their electrical properties, provides essential functionality for chip manufacturing but also introduces lattice damage. When high-energy ions bombard the silicon crystal structure near the surface, the originally ordered single-crystal structure suffers severe damage. This damage not only affects the material's physical properties but also hinders the effective activation of dopant ions, thereby threatening the overall performance of the chip. Therefore, annealing becomes a critical step in semiconductor manufacturing.

[0003] However, existing annealing equipment can only heat and anneal one part at a time, which reduces the manufacturing efficiency of semiconductor products and increases manufacturing costs. Summary of the Invention

[0004] This invention provides a microwave annealing apparatus, annealing method, and semiconductor process equipment, which can simultaneously heat multiple parts to be annealed and ensure the annealing uniformity of each part, thereby improving the processing efficiency and yield of the parts to be annealed.

[0005] According to one aspect of the present invention, a microwave annealing apparatus is provided, the microwave annealing apparatus comprising:

[0006] An annealing chamber, wherein a plurality of support platforms are spaced apart along a first direction; the support platforms are used to support the parts to be annealed, wherein the first direction is the height direction of the annealing chamber;

[0007] A multi-layer microwave generating array is distributed in at least two layers along the first direction, and each layer of the microwave generating array includes multiple microwave generating modules distributed along the circumferential direction of the annealing chamber.

[0008] The control module, electrically connected to each of the microwave generating modules, is used to control the microwave energy beams output by each microwave generating module in each layer of the microwave generating array to move along a preset path by adjusting the phase of the microwaves output by each microwave generating module, so as to scan and heat the component to be annealed.

[0009] Optionally, the microwave annealing apparatus provided in this embodiment further includes a multilayer temperature detection array;

[0010] The multi-layer temperature detection array is distributed in at least two layers along the first direction, and each layer of the temperature detection array includes multiple temperature detection modules distributed along the circumferential direction.

[0011] The control module is also used to adjust the preset path according to the detection result of the temperature detection module, so that the temperature difference between different areas of the component to be annealed is maintained within a preset threshold.

[0012] Optionally, the temperature detection array corresponds one-to-one with the microwave generating array;

[0013] The control module is used to dynamically adjust the preset path of the microwave generating array corresponding to each layer of the temperature detection array based on the temperature information detected by each temperature detection module in each layer of the temperature detection array.

[0014] Optionally, the microwave generating module includes a solid-state microwave source and a microwave waveguide;

[0015] The solid-state microwave source is connected to the input end of the microwave waveguide, and the output end of the microwave waveguide is fixed to the outside of the annealing chamber and communicates with the inside of the annealing chamber.

[0016] Optionally, the microwave generating module includes a solid-state microwave source and a microwave probe;

[0017] The solid-state microwave source is fixed outside the annealing chamber, the microwave probe is connected to the output end of the solid-state microwave source, and at least a portion of the microwave probe extends into the annealing chamber.

[0018] Optionally, the microwave generating module is a solid-state microwave source;

[0019] The solid-state microwave source includes a microwave phase-locked power unit, a power divider unit, multiple power amplification units, a power combining unit, a control unit, a DC power supply unit, and a water-cooled plate.

[0020] The power combining unit and the plurality of power amplification units are all located on one side of the water-cooled plate.

[0021] Optionally, the solid-state microwave source further includes a detection unit;

[0022] The detection unit is used to detect the incident power and reflected power of the solid-state microwave source in which it is located;

[0023] The control unit is also used to dynamically adjust the output frequency and output power of the solid-state microwave source based on the incident power and the reflected power of the solid-state microwave source in which it is located.

[0024] Optionally, the number of the support platforms is greater than or equal to the number of layers of the microwave generating array;

[0025] The multiple support platforms are distributed at equal intervals;

[0026] The microwave generating arrays are distributed at equal intervals in multiple layers.

[0027] According to another aspect of the present invention, a microwave annealing method is provided, which is applied in the microwave annealing apparatus provided in any embodiment of the present invention;

[0028] The microwave annealing method includes:

[0029] The control module adjusts the phase of the microwaves output by each microwave generating module to control the microwave energy beams output by each microwave generating module in each layer of the microwave generating array to move along a preset path, so as to scan and heat the component to be annealed.

[0030] According to another aspect of the present invention, a semiconductor process apparatus is provided, which includes the microwave annealing apparatus provided in any embodiment of the present invention.

[0031] This invention provides a microwave annealing apparatus. The annealing chamber of this apparatus is equipped with multiple support platforms, each capable of supporting the parts to be annealed. This allows multiple parts to be annealed simultaneously within a single annealing chamber, improving annealing efficiency. This invention also incorporates a multi-layer microwave generating array, with each layer containing multiple microwave generating modules. This creates a three-dimensional microwave field distribution within the annealing chamber, ensuring that parts at different heights are heated. The control module in this invention can control the phase of each microwave generating module, concentrating the microwave energy beams output from multiple modules in each layer of the array into a superimposed region. By controlling the phase, the superimposed region moves along a preset path, achieving a scanning heating function for the parts to be annealed. This ensures that every area of ​​the parts is heated, achieving uniform heating without the need for mechanical rotating support platforms or microwave generating modules. In summary, the microwave annealing apparatus provided in this embodiment of the invention can heat multiple parts to be annealed simultaneously, and can also ensure the annealing uniformity of each part, thereby improving the processing efficiency and yield of the parts to be annealed.

[0032] It should be understood that the description in this section is not intended to identify key or essential features of the embodiments of the present invention, nor is it intended to limit the scope of the invention. Other features of the invention will become readily apparent from the following description. Attached Figure Description

[0033] To more clearly illustrate the technical solutions in the embodiments of the present invention, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0034] Figure 1 This is a three-dimensional structural schematic diagram of a microwave annealing apparatus according to an embodiment of the present invention;

[0035] Figure 2 This is a cross-sectional structural schematic diagram of a microwave annealing apparatus provided according to an embodiment of the present invention;

[0036] Figure 3 This is a top view of a microwave annealing apparatus according to an embodiment of the present invention;

[0037] Figure 4 This is a three-dimensional structural schematic diagram of another microwave annealing apparatus provided according to an embodiment of the present invention;

[0038] Figure 5 This is a top view of another microwave annealing apparatus provided according to an embodiment of the present invention;

[0039] Figure 6 This is a schematic diagram of the structure of a microwave generating module according to an embodiment of the present invention;

[0040] Figure 7 This is a schematic flowchart of a microwave annealing method provided according to an embodiment of the present invention. Detailed Implementation

[0041] To enable those skilled in the art to better understand the present invention, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort should fall within the scope of protection of the present invention.

[0042] It should be noted that the terms "first," "second," etc., in the specification, claims, and accompanying drawings of this invention are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that the embodiments of the invention described herein can be implemented in orders other than those illustrated or described herein. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover a non-exclusive inclusion; for example, a process, method, system, product, or apparatus that comprises a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, products, or apparatus.

[0043] Figure 1 This is a three-dimensional structural schematic diagram of a microwave annealing apparatus according to an embodiment of the present invention. Figure 2 This is a cross-sectional structural schematic diagram of a microwave annealing apparatus according to an embodiment of the present invention. Figure 3 This is a top view schematic diagram of a microwave annealing apparatus according to an embodiment of the present invention, with reference to... Figures 1-3 The microwave annealing apparatus provided in this embodiment includes: an annealing chamber 110, a control module 120, and a multilayer microwave generating array 130; multiple support platforms 111 are spaced apart along a first direction Z inside the annealing chamber 110; the support platforms 111 are used to support the component 210 to be annealed, wherein the first direction Z is the height direction of the annealing chamber 110; the multilayer microwave generating array 130 is distributed in at least two layers along the first direction Z, and each layer of the microwave generating array 130 includes multiple microwave generating modules 131 distributed along the circumferential direction of the annealing chamber 110 (see reference). Figure 3 The control module 120 is electrically connected to each microwave generating module 131. The control module 120 is used to control the microwave energy beam output by each microwave generating module 131 in each layer of microwave generating array 130 to move along a preset path by adjusting the phase of the microwave output by each microwave generating module 131, so as to scan and heat the component 210 to be annealed.

[0044] Specifically, the circumferential direction refers to the direction surrounding the central axis of the annealing chamber 110. For example, when the annealing chamber 110 is a hollow cylinder, the circumferential direction can be the circumferential direction; when the annealing chamber 110 is other regular polygonal prisms, the circumferential direction is the path direction along the inner wall of the annealing chamber 110.

[0045] The microwave generating module 131 is used to output microwaves. For example, the microwave generating module 131 may include a magnetron or a solid-state microwave source. The microwave generating array 130 can have 2, 3, 4, 5, or 6 layers, etc., and the spacing between each layer of the microwave generating array 130 can be equal or unequal. A single layer of the microwave generating array 130 can include 2, 3, 4, or 5 microwave generating modules 131, etc., and the spacing between each microwave generating module 131 can be equal or unequal.

[0046] In this embodiment, multiple support platforms 111 are provided in the annealing chamber 110. Each support platform 111 can support one component 210 to be annealed, so that the annealing chamber 110 can simultaneously accommodate multiple components 210 to be annealed. It can be seen that the microwave annealing device provided in this embodiment can anneal multiple components 210 to be annealed at the same time, without having to anneal each component 210 individually in sequence, thereby improving the annealing efficiency of multiple components 210 to be annealed.

[0047] The multi-layer microwave generating array 130 corresponds to multiple support platforms 111, ensuring that the component 210 to be annealed on each support platform 111 receives microwave energy. Each layer of the microwave generating array 130 includes multiple microwave generating modules 131, enabling multiple areas of the component 210 to be annealed on the support platform 111 to receive microwave energy. Therefore, the multi-layer microwave generating array 130 configured in this embodiment can form a three-dimensional microwave radiation field within the annealing chamber 110.

[0048] The control module 120 can be electrically connected to each microwave generating module 131 in the microwave annealing apparatus, thereby controlling the phase of the microwave signal output by each microwave generating module 131. Specifically, the control module 120 is used to individually control the microwave energy beams output by the microwave generating modules 131 in the same layer of the microwave generating array 130 to spatially coherently superimpose and form a superposition region. Figure 3 The white circular area located in the part 210 to be annealed can be considered as a superposition area. The superposition area can be the area formed by the superposition of the microwave signals with the maximum output field strength of each microwave generating module 131 in the same microwave generating array 130. The control module 120 is also used to control the superposition area to move along a preset path. The direction of the preset path can be the circumferential direction of the annealing chamber 110, so as to scan and heat the part 210 to be annealed. The microwave energy in the superposition area is parallel to the surface of the part 210 to be annealed. The preset path can also be the diameter direction of the support stage 111. The superposition area can pass through each area of ​​the part 210 to be annealed, scan and heat the part 210 to be annealed, so as to ensure that each area of ​​the part 210 to be annealed is heated by microwaves, thereby improving the heating uniformity of the part 210 to be annealed. It can be seen that the microwave annealing device provided in this embodiment can improve the heating uniformity of the part 210 to be annealed, and can achieve heating of multiple areas of the part 210 to be annealed without setting up a mechanical structure to rotate the support stage 111 or rotate the microwave generating module 131.

[0049] It should be noted that, Figure 3 It can be Figure 1 The diagram shows a top view of the microwave annealing apparatus.

[0050] This embodiment provides a microwave annealing apparatus. The annealing chamber of this apparatus is equipped with multiple support platforms, each capable of supporting the parts to be annealed. This allows multiple parts to be annealed simultaneously within a single annealing chamber, improving annealing efficiency. This embodiment also incorporates a multi-layer microwave generating array, with each layer containing multiple microwave generating modules. This creates a three-dimensional microwave field distribution within the annealing chamber, ensuring that parts at different heights are heated. The control module in this embodiment can control the phase of each microwave generating module, concentrating the microwave energy beams output from multiple modules in each layer of the array into a superimposed region. By controlling the phase, the superimposed region moves along a preset path, achieving a scanning heating function for the parts to be annealed. This ensures that every area of ​​the parts is heated, achieving uniform heating without the need for mechanical rotating support platforms or microwave generating modules. In summary, the microwave annealing apparatus provided in this embodiment can simultaneously heat multiple parts to be annealed while ensuring uniform annealing for each part, thus improving processing efficiency and yield.

[0051] Optional, Figure 4 This is a three-dimensional structural schematic diagram of another microwave annealing apparatus provided according to an embodiment of the present invention. Figure 5 This is a top view schematic diagram of another microwave annealing apparatus provided according to an embodiment of the present invention, with reference to... Figure 4 and Figure 5 The microwave annealing apparatus provided in this embodiment also includes a multi-layer temperature detection array 140; the multi-layer temperature detection array 140 is distributed in at least two layers along the first direction Z, and each layer of temperature detection array 140 includes multiple temperature detection modules 141 distributed along the circumferential direction; the control module is also used to adjust the preset path according to the detection results of the temperature detection modules 141 so that the temperature difference between different areas of the component 210 to be annealed is maintained within a preset threshold.

[0052] Specifically, the temperature detection array 140 can have 2, 3, 4, 5, or 6 layers, and the spacing between each layer of temperature detection array 140 can be equal or unequal. Each layer of temperature detection array 140 can include 2, 3, 4, or 5 temperature detection modules 141, and the spacing between each temperature detection module 141 can be equal or unequal. The temperature detection module 141 can include an infrared temperature sensor or a thermocouple.

[0053] The control module can receive real-time detection results (the detected temperature) from the temperature detection module 141 and dynamically adjust the moving speed, dwell time, or intensity of the superimposed area of ​​the preset path based on these results. For example, if the control module detects that the temperature of a certain area of ​​the component 210 to be annealed is too high, the control module can control the superimposed area to quickly move away from that area or reduce the microwave intensity of that area; if the control module detects that the temperature of a certain area of ​​the component 210 to be annealed is too low, it can control the superimposed area to stay in that area for a longer time or increase the microwave intensity.

[0054] This embodiment employs a multi-layer temperature detection array 140 to detect the temperature of the annealing chamber 110 at different heights. Each temperature detection array 140 is equipped with multiple temperature detection modules 141 distributed circumferentially to detect the temperature of different peripheries of the component 210 to be annealed. This embodiment achieves closed-loop temperature control within the annealing chamber 110 through the multi-layer temperature detection array 140. By controlling the concentration area and direction of microwave energy based on temperature, the temperature differences between different areas of the component 210 to be annealed are minimized, further achieving uniform heating of the component 210 and ensuring annealing uniformity.

[0055] It should be noted that, Figure 5 It can be Figure 4 The diagram shows a top view of the microwave annealing apparatus.

[0056] Optionally, the temperature detection array and the microwave generating array are in one-to-one correspondence; the control module is used to dynamically adjust the preset path of the microwave generating array corresponding to each temperature detection array based on the temperature information detected by each temperature detection module in each layer of the temperature detection array.

[0057] Specifically, the preset paths of the microwave energy beams in each layer of the microwave generating array can be the same or different, depending on the detection results of the temperature detection array corresponding to each layer of the microwave generating array. In this embodiment, each layer of the microwave generating array corresponds to a temperature detection array, which ensures that the components to be annealed on the support platform corresponding to each layer of the microwave generating array are heated uniformly.

[0058] Optionally, the microwave generation module includes a solid-state microwave source and a microwave waveguide; the solid-state microwave source is connected to the input end of the microwave waveguide, and the output end of the microwave waveguide is fixed to the outside of the annealing chamber and communicates with the inside of the annealing chamber.

[0059] Specifically, the microwave generation module consists of a solid-state microwave source and a microwave waveguide. The microwave waveguide transmits microwave energy to the annealing chamber, which can transmit high-power microwaves, reduce microwave loss, and improve transmission efficiency.

[0060] Optionally, the microwave generating module includes a solid-state microwave source and a microwave probe; the solid-state microwave source is fixed outside the annealing chamber, the microwave probe is connected to the output end of the solid-state microwave source, and at least a portion of the microwave probe extends into the annealing chamber.

[0061] Specifically, setting the microwave generating module to consist of a solid-state microwave source and a microwave probe can reduce the size of the microwave generating module.

[0062] Optional, Figure 6 This is a schematic diagram of the structure of a microwave generating module according to an embodiment of the present invention, with reference to... Figure 6 The microwave generation module 131 is a solid-state microwave source; the solid-state microwave source includes a microwave phase-locked power unit 1311, a power divider unit 1312, multiple power amplification units 1313, a power combining unit 1314, a control unit 1315, a DC power supply unit 1316, and a water-cooled plate; the power combining unit 1314 and the multiple power amplification units 1313 are all located on one side of the water-cooled plate.

[0063] Specifically, the microwave phase-locked power unit 1311 is connected to the power divider unit 1312. Each output terminal of the power divider unit 1312 is connected to a power amplifier unit 1313. Each power amplifier unit 1313 is connected to the power combining unit 1314. The power combining unit 1314 transmits the output microwave energy to the annealing chamber.

[0064] The power divider unit 102 divides the microwave energy from the primary power output of the microwave phase-locked power unit 1311 into multiple microwave streams, which are then sent to each power amplification unit 1313. Each power amplification unit 1313 amplifies the power of the microwave it receives. The power combining unit 1314 combines the amplified microwaves output from the connected power amplification units 1313 and outputs high-power microwave energy into the annealing cavity. The center frequency of the microwave output by the microwave phase-locked power unit 1311 can be 915MHz or 2450MHz.

[0065] The DC power supply unit 1316 outputs DC voltage, which can supply power to each power amplifier unit 1313. The control unit 1315 can control the magnitude of the power supply voltage supplied by the DC power supply unit 1316 to each power amplifier unit 1313, and control the output power of the power amplifier unit 1313 by controlling the magnitude of the power supply voltage.

[0066] The output power of a single power amplifier unit 1313 can be 300W, 400W, 500W, or 600W, etc. The number of power amplifier units 1313 can be 4, 5, 6, 7, 8, or 9, etc.

[0067] To ensure the solid-state microwave source operates efficiently for extended periods, this embodiment also incorporates a water-cooled plate for cooling. The water-cooled plate is made of metal, exemplarily aluminum, and has an inlet and outlet for liquid cooling, with an internal liquid cooling channel, which can have a serpentine structure. Water can flow through the liquid cooling channel within the water-cooled plate. This embodiment utilizes water cooling for the solid-state microwave source, which offers superior cooling performance, a small footprint, eliminates the need for ventilation, and generates low noise.

[0068] Optionally, the solid-state microwave source also includes a detection unit; the detection unit is used to detect the incident power and reflected power of the solid-state microwave source to which it is located; the control unit is also used to dynamically adjust the output frequency and output power of the solid-state microwave source according to the incident power and reflected power of the solid-state microwave source to which it is located.

[0069] Specifically, the control unit can adjust the output frequency of the microwave phase-locked power unit according to the incident power and reflected power, causing the output frequency to deviate from the center frequency to reduce reflected power. Impedance matching is achieved through dynamic adjustment of the output frequency, thereby improving the utilization rate of microwave energy. The control unit can also control the output power of each power amplifier unit, thereby controlling the output power of the solid-state microwave source. In this embodiment, impedance matching is achieved by adjusting the output power and output frequency, eliminating the need for an impedance matching device and reducing the size and cost of the microwave annealing device.

[0070] Optionally, the annealing chamber is a hollow cylinder; the microwave generating array includes four equally spaced microwave generating modules.

[0071] Specifically, the annealing chamber is designed as a hollow cylinder, which allows it to match the shape of the wafer, thus enabling annealing of wafers when the component to be annealed is a wafer. Within the same microwave generator array, the distance between two adjacent microwave generator modules can be one-quarter of the circumference of the annealing chamber.

[0072] Optionally, the number of carrier platforms is greater than or equal to the number of layers of the microwave generating array; multiple carrier platforms are distributed at equal intervals; or multiple layers of microwave generating arrays are distributed at equal intervals.

[0073] Specifically, when the number of carrier platforms is equal to the number of layers of the microwave generating array, each microwave generating array corresponds to one carrier platform. The microwave energy output by the microwave generating array is mainly concentrated on the component to be annealed carried by the carrier platform corresponding to the microwave generating array. This allows for more precise control of the annealing effect of the component to be annealed.

[0074] When the number of carrier stages is greater than the number of layers of the microwave generator array, one layer of microwave generator array can correspond to multiple carrier stages. A relatively small number of microwave generator modules can be used to anneal multiple parts to be annealed at the same time, reducing costs and improving annealing efficiency.

[0075] This embodiment provides a microwave annealing method, which can be applied to the microwave annealing apparatus provided in any embodiment of the present invention. Figure 7 This is a schematic flowchart of a microwave annealing method according to an embodiment of the present invention. (Refer to...) Figure 7 The microwave annealing method provided in this embodiment includes the following steps:

[0076] S110. Place multiple parts to be annealed onto the support platform inside the annealing chamber.

[0077] Specifically, each support platform can hold one component to be annealed.

[0078] S120 The control module adjusts the phase of the microwaves output by each microwave generating module to control the microwave energy beams output by each microwave generating module in each layer of the microwave generating array to move along a preset path in order to scan and heat the part to be annealed.

[0079] The microwave annealing method provided in the embodiments of the present invention has the same technical effect as the microwave annealing apparatus provided in any embodiment of the present invention. For details not described in the microwave annealing method provided in the embodiments of the present invention, please refer to the content of the microwave annealing apparatus provided in any embodiment of the present invention.

[0080] This embodiment also provides a semiconductor process apparatus, which includes the microwave annealing apparatus provided in any embodiment of the present invention.

[0081] The semiconductor process equipment provided in this embodiment includes a microwave annealing apparatus. Since the semiconductor process equipment provided in this embodiment includes the microwave annealing apparatus provided in any embodiment of the present invention, it also includes the technical features and corresponding beneficial effects of the microwave annealing apparatus.

[0082] It should be understood that the various forms of processes shown above can be used, with steps reordered, added, or deleted. For example, the steps described in this invention can be executed in parallel, sequentially, or in different orders, as long as the desired result of the technical solution of this invention can be achieved, and this is not limited herein.

[0083] The specific embodiments described above do not constitute a limitation on the scope of protection of this invention. Those skilled in the art should understand that various modifications, combinations, sub-combinations, and substitutions can be made according to design requirements and other factors. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of this invention should be included within the scope of protection of this invention.

Claims

1. A microwave annealing apparatus, characterized in that, include: An annealing chamber, wherein a plurality of support platforms are spaced apart along a first direction; the support platforms are used to support the parts to be annealed, wherein the first direction is the height direction of the annealing chamber; A multi-layer microwave generating array is distributed in at least two layers along the first direction, and each layer of the microwave generating array includes multiple microwave generating modules distributed along the circumferential direction of the annealing chamber. The control module, electrically connected to each of the microwave generating modules, is used to control the microwave energy beams output by each microwave generating module in each layer of the microwave generating array to move along a preset path by adjusting the phase of the microwaves output by each microwave generating module, so as to scan and heat the component to be annealed.

2. The microwave annealing apparatus according to claim 1, characterized in that, It also includes a multi-layer temperature detection array; The multi-layer temperature detection array is distributed in at least two layers along the first direction, and each layer of the temperature detection array includes multiple temperature detection modules distributed along the circumferential direction. The control module is also used to adjust the preset path according to the detection result of the temperature detection module, so that the temperature difference between different areas of the component to be annealed is maintained within a preset threshold.

3. The microwave annealing apparatus according to claim 2, characterized in that, The temperature detection array corresponds one-to-one with the microwave generating array; The control module is used to dynamically adjust the preset path of the microwave generating array corresponding to each layer of the temperature detection array based on the temperature information detected by each temperature detection module in each layer of the temperature detection array.

4. The microwave annealing apparatus according to claim 1, characterized in that, The microwave generating module includes a solid-state microwave source and a microwave waveguide; The solid-state microwave source is connected to the input end of the microwave waveguide, and the output end of the microwave waveguide is fixed to the outside of the annealing chamber and communicates with the inside of the annealing chamber.

5. The microwave annealing apparatus according to claim 1, characterized in that, The microwave generating module includes a solid-state microwave source and a microwave probe. The solid-state microwave source is fixed outside the annealing chamber, the microwave probe is connected to the output end of the solid-state microwave source, and at least a portion of the microwave probe extends into the annealing chamber.

6. The microwave annealing apparatus according to claim 1, characterized in that, The microwave generating module is a solid-state microwave source; The solid-state microwave source includes a microwave phase-locked power unit, a power divider unit, multiple power amplification units, a power combining unit, a control unit, a DC power supply unit, and a water-cooled plate. The power combining unit and the plurality of power amplification units are all located on one side of the water-cooled plate.

7. The microwave annealing apparatus according to claim 6, characterized in that, The solid-state microwave source also includes a detection unit; The detection unit is used to detect the incident power and reflected power of the solid-state microwave source in which it is located; The control unit is also used to dynamically adjust the output frequency and output power of the solid-state microwave source based on the incident power and the reflected power of the solid-state microwave source in which it is located.

8. The microwave annealing apparatus according to claim 1, characterized in that, The number of the support platforms is greater than or equal to the number of layers of the microwave generating array; The multiple support platforms are distributed at equal intervals; The microwave generating arrays are distributed at equal intervals in multiple layers.

9. A microwave annealing method, characterized in that, Applied in the microwave annealing apparatus according to any one of claims 1-8; The microwave annealing method includes: The control module adjusts the phase of the microwaves output by each microwave generating module to control the microwave energy beams output by each microwave generating module in each layer of the microwave generating array to move along a preset path, so as to scan and heat the component to be annealed.

10. A semiconductor process apparatus, characterized in that, Includes the microwave annealing apparatus according to any one of claims 1-8.

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