Semiconductor structure and forming method thereof

By forming a thermistor structure in the silicon carbide epitaxial layer, the accuracy and speed problems of traditional chip temperature detection technology are solved, enabling rapid and accurate detection of chip temperature, providing better overload protection, and improving the reliability and lifespan of the device.

CN122121665APending Publication Date: 2026-05-29ALPHA POWER SOLUTIONS SHANGHAI LTD
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Patent Information

Application Number
CN202610219858.X
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2026-02-15
Publication Date
2026-05-29

AI Technical Summary

Technical Problem

Traditional chip temperature detection technologies cannot accurately and quickly reflect changes in chip temperature, especially in the event of short-term overload, where they cannot provide effective protection.

Method used

A thermistor structure is formed in the silicon carbide epitaxial layer and located in the shielding structure on both sides of the trench gate structure. The thermistor structure extends deep into the silicon carbide epitaxial layer to improve the accuracy and speed of temperature detection.

Benefits of technology

It enables accurate and rapid detection of chip temperature, providing better over-temperature and over-current protection, especially in short-term overload events, effectively protecting the device and improving its reliability and lifespan.

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Abstract

The invention provides a semiconductor structure and a forming method thereof, and the semiconductor structure comprises a silicon carbide substrate, the surface of which is provided with a silicon carbide epitaxial layer; the trench gate structure is located in the silicon carbide epitaxial layer; the shielding structures are located in the silicon carbide epitaxial layer on the two sides of the trench gate structures; and the thermistor structure is positioned in the shielding structure. According to the semiconductor structure and the forming method thereof, the thermistor structures used for detecting the temperature are formed in the shielding structures on the two sides of the trench gate structure, and an accurate and rapid chip temperature detection technical scheme is provided.
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