Optical semiconductor device and optical transceiver

Abstract

A light semiconductor device according to the present disclosure includes a socket having a main surface and a ring-shaped wall portion extending from the main surface; a seating portion joined to an inner side surface of the wall portion; a semiconductor laser chip mounted on the seating portion; a pattern provided on the seating portion and electrically connected to the semiconductor laser chip; and a lead pin extending from a portion of the main surface of the socket surrounded by the wall portion and connected to the pattern by a lead wire.

Description

Technical Field

[0001] This disclosure relates to optical semiconductor devices and optical transceivers. Background Technology

[0002] Patent Document 1 discloses a semiconductor optical modulation device. In this device, a temperature control module and a first support block are mounted on a metal tube base. A first dielectric substrate is mounted on the side of the first support block. A second support block is mounted on the cooling surface of the temperature control module. A second dielectric substrate is mounted on the side of the second support block, and a semiconductor optical modulation chip is mounted on the second dielectric substrate.

[0003] Patent Document 1: International Publication No. 2010 / 140473

[0004] For example, as shown in Patent Document 1, in conventional CAN-type optical modules, devices such as EML (Electro-absorption Modulator Laser Diode) chips and TEC (Thermoelectric Cooler) are bonded to the surface of a plate-shaped metal socket. The TEC is a thermoelectric module used to keep the temperature of the EML chip constant. In this structure, there are a back of the socket, a side of the socket, and a cover side as paths for heat dissipation from the inside of the CAN to the outside. However, FPC (Flexible Printed Circuits) are usually connected to the back of the socket. Therefore, it is difficult to dissipate heat from the back of the socket. In addition, since the socket is usually thin, about 1.3 mm, the thermal resistance of the side of the socket is high. In addition, since the cover side is usually far away from the heat source and the cover is thin, the thermal resistance is high. Thus, the heat dissipation may be limited. Summary of the Invention

[0005] The purpose of this disclosure is to provide an optical semiconductor device and an optical transceiver that can improve heat dissipation.

[0006] The optical semiconductor device disclosed herein includes: a socket having a main surface and an annular wall extending from the main surface; a pedestal portion joined to the inner side of the wall; a semiconductor laser chip mounted on the pedestal portion; a pattern disposed on the pedestal portion and electrically connected to the semiconductor laser chip; and lead pins extending from the portion of the main surface of the socket surrounded by the wall and connected to the pattern via leads.

[0007] The optical semiconductor device disclosed herein includes: a socket having a main surface and an annular wall extending from the main surface; a pedestal portion joined to the inner side of the wall; and a semiconductor laser chip mounted on the pedestal portion, wherein more than half of the pedestal portion is housed in a recess formed by the main surface and the wall in a direction perpendicular to the main surface of the socket.

[0008] In the optical semiconductor device disclosed herein, the pedestal portion carrying the semiconductor laser chip is joined to the inner side of the wall portion of the tube socket. Therefore, heat dissipation can be improved. Attached Figure Description

[0009] Figure 1 This is a perspective view of the optical semiconductor device involved in Embodiment 1.

[0010] Figure 2 This is a front view of the semi-finished product involved in Implementation Method 1.

[0011] Figure 3 This is a three-dimensional view of the optical semiconductor device involved in the comparative example.

[0012] Figure 4 This is a front view of the optical semiconductor device involved in Embodiment 1.

[0013] Figure 5 This is a perspective view of the optical semiconductor device involved in Embodiment 2.

[0014] Figure 6 This is a perspective view of the optical semiconductor device involved in Embodiment 3.

[0015] Figure 7 This is a front view of the semi-finished product involved in Implementation Method 3.

[0016] Figure 8 This is an enlarged view of the optical semiconductor device involved in Embodiment 3.

[0017] Figure 9 This is a front view of the optical semiconductor device involved in Embodiment 3.

[0018] Figure 10 This is a perspective view of the optical semiconductor device involved in Embodiment 4.

[0019] Figure 11 This is a diagram illustrating the bonding material involved in Embodiment 5.

[0020] Figure 12 This is a front view of the semi-finished product involved in Implementation Method 6.

[0021] Figure 13 This is a diagram illustrating the laser without a collimating lens.

[0022] Figure 14 This diagram illustrates the effect of a laser with a collimating lens.

[0023] Figure 15 This is a perspective view schematically illustrating the structure of the optical transceiver according to Embodiment 7.

[0024] Figure 16 This is a top view schematically illustrating the structure of the optical semiconductor device and heat sink according to Embodiment 7. Detailed Implementation

[0025] The optical semiconductor devices and optical transceivers according to various embodiments will be described with reference to the accompanying drawings. The same or corresponding components are labeled with the same reference numerals, and sometimes repeated descriptions are omitted.

[0026] Implementation Method 1

[0027] Figure 1 This is a perspective view of the optical semiconductor device 100 according to Embodiment 1. The optical semiconductor device 100 includes: a socket 10, a semi-finished product 20 bonded to the socket 10, and a plurality of lead pins 40. The socket 10 has a main surface 11 and an annular wall portion 12 extending from the main surface 11. A recess 14 is formed in the socket 10 through the main surface 11 and the wall portion 12. That is, the socket 10 can also be described as cup-shaped. The socket 10 is formed of a metal such as iron or SPC (Steel Plate Cold).

[0028] Figure 2 This is a front view of the semi-finished product 20 according to Embodiment 1. The semi-finished product 20 includes a base portion and a semiconductor laser chip 30 mounted on the base portion. The base portion includes, for example, a base 21 and a thermoelectric module 22, which is disposed on the base 21 and has the semiconductor laser chip 30 mounted on it. The base 21 is formed, for example, from a ceramic such as aluminum nitride or alumina. The thermoelectric module 22 is, for example, a TEC. The base 21 is joined to the wall portion 12 of the tube seat 10. That is, the base portion is joined to the inner side of the wall portion 12.

[0029] The thermoelectric module 22 also includes a thermistor 25 and a secondary base 26. A semiconductor laser chip 30 is mounted on the thermoelectric module 22 via the secondary base 26. The semiconductor laser chip 30 is, for example, an EML chip.

[0030] Figure 3This is a perspective view of the optical semiconductor device 800 involved in the comparative example. In the optical semiconductor device 800, a thermoelectric module 22 is mounted on a plate-shaped socket 810, and a carrier 870 is mounted on the cooling surface of the thermoelectric module 22. A semiconductor laser chip 30 is mounted on the carrier 870. In the optical semiconductor device 800, the socket 810 is thin, about 1.3 mm thick. Therefore, the thermal resistance of the side of the socket 810 is high. In addition, as mentioned above, it is difficult to dissipate heat from the back of the socket 810 and the side of the cover.

[0031] In contrast, in this embodiment, the pedestal 21 on which the semiconductor laser chip 30 is mounted is bonded to the inner side of the wall portion 12 of the tube socket 10. Therefore, heat dissipation can be improved. Specifically, by providing the wall portion 12, a large heat dissipation area can be ensured on the side of the tube socket 10, thereby ensuring a large contact area between the tube socket 10 and the pedestal 21. This reduces the thermal resistance of the path from the semiconductor laser chip 30 (which is a heat source) to the outside via the thermoelectric module 22, and particularly improves heat dissipation from the side of the tube socket 10. Furthermore, the improved heat dissipation reduces the power consumption for cooling the optical semiconductor device 100.

[0032] Preferably, the portion of the inner side of the wall 12 that engages with the base 21 is a flat portion. Furthermore, it is preferable that the portion 13 of the wall 12 of the tube holder 10 that engages with the base is thicker than other portions. This further improves heat dissipation. When viewed from a direction perpendicular to the main surface 11, the recess 14 formed by the main surface 11 and the wall 12 of the tube holder 10 is, for example, D-shaped. The recess 14 can also be described as having the shape of a wafer with an orientation flat. Such a tube holder 10 can be easily manufactured using a metal mold.

[0033] Return to Figure 2 The description continues. Patterns electrically connected to the semiconductor laser chip 30 are provided on the base portion. Specifically, patterns 23 and 28 are provided on the base 21, and pattern 24 is provided on the thermoelectric module 22. Figure 2 In this example, pattern 23 is electrically connected to the electrodes of the semiconductor laser chip 30 via lead 44. Patterns 23 and 28 are, for example, DC lines, GND, or other electrode patterns. Pattern 24 is, for example, a GND or other electrode pattern.

[0034] A through hole 27 is formed in the base 21. The surface of the base 21 in which the thermoelectric module 22 is disposed is electrically connected to the tube socket 10 via the through hole 27. That is, the pattern 28 on the surface of the base 21, which is electrically connected to the through hole 27, and the tube socket 10, which serves as GND, are electrically connected through the through hole 27. The pattern 28 and the pattern 24 on the surface of the thermoelectric module 22 are connected by a lead wire 44. This strengthens the GND.

[0035] like Figure 1As shown, a plurality of lead pins 40 extend from the portion of the main surface 11 of the socket 10 surrounded by the wall portion 12. The plurality of lead pins 40 extend to the back surface of the socket 10 opposite to the main surface 11. The plurality of lead pins 40 are respectively disposed in through holes that extend the socket 10 from the main surface 11 to the back surface. In the through holes, the space between the socket 10 and the lead pins 40 is filled with glass 42.

[0036] Figure 4 This is a front view of the optical semiconductor device 100 according to Embodiment 1. Figure 4 The image shows the portion of the encapsulated opto-semiconductor device 100, primarily above the upper end of the socket 10. Pattern 23 and multiple lead pins 40 are connected by leads 44. In a direction perpendicular to the main surface 11 of the socket 10, the lead pins 40 and the pedestal portion protrude beyond the wall portion 12 of the socket 10. Specifically, the portion of the pedestal 21 with length L1 on the cover 50 side protrudes beyond the wall portion 12.

[0037] In this embodiment, assembly can be performed by pre-assembling a semi-finished product 20 comprising a base 21, a thermoelectric module 22, a thermistor 25, a sub-base 26, and a semiconductor laser chip 30, and then joining the semi-finished product 20 to the flat portion of the wall portion 12. At this time, the four sides of the portion of the base 21 that protrudes from the wall portion 12 of the tube seat 10 can be held using a pyramidal collet or similar tool and joined to the flat portion of the wall portion 12. Therefore, assembly can be performed easily.

[0038] Furthermore, in this embodiment, the portion of pattern 23 that protrudes beyond the wall portion 12 is connected to the portion of lead pin 40 that protrudes beyond the wall portion 12 via lead wire 44. Therefore, after the semi-finished product 20 is installed on the base 10, the lead wire 44 can be wired from the front, i.e., in a direction perpendicular to the surface of the base 21, making assembly easier.

[0039] A cover 50 is disposed on the end face 12a of the wall portion 12 of the tube base 10, opposite to the main face 11. The cover 50 covers the recess 14 formed by the main face 11 and the wall portion 12. The cover 50 is a lens cover with a lens 51. After the cover 50 is installed, X and Y axis adjustments are made. The X and Y axes are, for example, axes parallel to the main face 11, with the X axis along the surface of the thermoelectric module 22 and the Y axis perpendicular to the surface of the thermoelectric module 22.

[0040] In this embodiment, to ensure the contact area between the tube seat 10 and the pedestal portion, for example, more than half of the pedestal portion can be accommodated in the recess 14 of the tube seat 10 in a direction perpendicular to the main surface 11 of the tube seat 10. That is, if... Figure 2 If the length of the pedestal 21 shown is L0, then L0 / 2 > L1. However, as long as heat dissipation can be ensured, L0 / 2 ≤ L1 is also acceptable.

[0041] In addition, the shape of the tube seat 10 is not limited to Figure 1 The shape shown can be any shape that allows the base portion to be joined to the inner side of the wall portion 12.

[0042] The above-described modifications can be appropriately applied to the optical semiconductor device and optical transceiver involved in the following embodiments. Furthermore, since the optical semiconductor device and optical transceiver involved in the following embodiments share many similarities with Embodiment 1, the differences from Embodiment 1 will be described.

[0043] Implementation Method 2

[0044] Figure 5 This is a perspective view of the optical semiconductor device 200 according to Embodiment 2. In this embodiment, the structure of the socket 210 differs from that in Embodiment 1. In this embodiment, the portion of the wall 212 of the socket 210 that engages with the base 21 protrudes in a direction perpendicular to the main surface 11 than the other portions. Specifically, the wall 212 of the socket 210 has an annular wall 215 and a base engagement portion 216 configured to contact the inner surface of the annular wall 215. The annular wall 215 has a uniform height from the main surface 11. The base engagement portion 216 protrudes in a direction perpendicular to the main surface 11 than the annular wall 215 and engages with the base 21. The socket 210 is, for example, a socket base made of a metal material such as Cu, to which an Au plating layer or the like is applied.

[0045] In this embodiment, the end face 215a of the annular wall portion 215, opposite to the main face 11, becomes the welding surface of the cover 50. The annular wall portion 215 and the pedestal joint portion 216 are formed as one component. However, it is not limited to this; the annular wall portion 215 and the pedestal joint portion 216 can also be different components.

[0046] In this embodiment, the annular wall portion 215 is made lower than the wall portion 12 in Embodiment 1, thereby increasing the amount by which the semi-finished product 20 protrudes from the annular wall portion 215. That is, if the length of the portion protruding from the annular wall portion 215 in the platform 21 is set to L2, then L2 > L1. Typically, in the EML-CAN bridging substrate, chip bonding is performed by holding the three sides of the substrate with a pyramidal chuck. In this embodiment, by increasing L2, it is also possible to hold the three sides 21a, 21b, and 21c of the platform 21 with a pyramidal chuck or the like to perform chip bonding on the semi-finished product 20. Therefore, assembly can be facilitated. For example, L0 / 2 < L2 can also be used.

[0047] However, since the annular wall portion 215 is lower than the wall portion 12 in Embodiment 1, the heat dissipation performance of this embodiment is worse than that of Embodiment 1. In this embodiment, L0 / 2 can also be set to be greater than L2 to improve heat dissipation performance. In this embodiment, the entire surface of the base 21 is in contact with the base joint portion 216. Therefore, when the annular wall portion 215 is set to the same height as the wall portion 12, the heat dissipation performance of this embodiment is higher than that of Embodiment 1.

[0048] Implementation Method 3

[0049] Figure 6 This is a perspective view of the optical semiconductor device 300 according to Embodiment 3. In this embodiment, the structure of the socket 310 differs from that in Embodiment 1. The wall portion 312 of the socket 310 has an annular wall portion 315 and a pedestal engagement portion 316, which is configured to contact the inner surface of the annular wall portion 315 and engage with the pedestal 21. The annular wall portion 315 and the pedestal engagement portion 316 are different components. That is, the flat portion that engages with the pedestal 21 is configured as a different component. The pedestal engagement portion 316 may, for example, be formed of the same material as the annular wall portion 315.

[0050] In this embodiment, the entire base portion, including the pedestal 21 and the thermoelectric module 22, is housed within the recess 14 formed by the main surface 11 and the wall portion 312. This improves heat dissipation.

[0051] Figure 7 This is a front view of the semi-finished product 320 according to Embodiment 3. In this embodiment, the platform 21, thermoelectric module 22, thermistor 25, sub-base 26, semiconductor laser chip 30, and platform joint 316 constitute the semi-finished product 320. The upper surface 316a of the platform joint 316 is held by an adsorption clamp or the like, thereby enabling the semi-finished product 320 to be joined to the annular wall portion 315. As a result, assembly can be easily performed.

[0052] In addition, such as Figure 6 As shown, the upper surface of the lead pin 40 and the upper surface of the base 21 can be connected by lead wire 44. This improves assemblability. To achieve such a lead connection, a pattern can also be formed on the upper surface of the base 21.

[0053] Figure 8 This is an enlarged view of the optical semiconductor device 300 according to Embodiment 3. When bonding the semi-finished product 320, the semi-finished product 320 is pressed in the Z-axis direction, that is, in the direction perpendicular to the main surface 11, to bond the main surface 11 and the pedestal bonding portion 316. In the case of bonding with solder, the solder can also wet and spread between the pedestal bonding portion 316 and the annular wall portion 315.

[0054] Figure 9This is a front view of the optical semiconductor device 300 according to Embodiment 3. Figure 9 The portion of the encapsulated opto-semiconductor device 300, primarily above the upper end of the socket 310, is shown. In this embodiment, the end face 315a of the annular wall portion 315, opposite to the main surface 11, becomes the welding surface of the cover 50. Unlike Embodiment 1, in this embodiment, the semi-finished product 320 does not protrude from the end face 315a of the socket 310, and the semi-finished product 320 is completely contained. This allows for a reduction in the height of the cover 50.

[0055] Furthermore, although an example of the annular wall portion 315 and the pedestal joint portion 316 being different components has been described in this embodiment, the annular wall portion 315 and the pedestal joint portion 316 may also be formed as a single component.

[0056] Furthermore, from the viewpoint of ensuring uniform thermal properties, it is preferable that the materials of the pedestal joint 316 and the pedestal joint 216 in Embodiment 2 are the same as those of the other parts of the tube bases 210 and 310. If the pedestal joint is formed of a different material, the change in the shape of the components due to changes in the external temperature caused by increased stress and differences in deformation between the components may lead to a greater variation in the position of the light-emitting point of the semiconductor laser chip 30. As a result, the optical coupling efficiency at the optical fiber 70 may deteriorate due to the change in the focal position of the lens 51.

[0057] Implementation Method 4

[0058] Figure 10 This is a perspective view of the optical semiconductor device 400 according to Embodiment 4. The optical semiconductor device 400 includes an RF (Radio Frequency) power supply lead 446. The RF power supply lead 446 is provided on a protrusion 417, which is formed on the main surface 11 of the socket 410. Furthermore, in Figure 10 The terminating resistor and the capacitor for the LD (Laser Diode) are omitted.

[0059] When the semiconductor laser chip 30 is an EML, an additional RF power supply line to the EA (Electro-Absorption) modulator is required. In this embodiment, an RF power supply lead 446 is added to the center of the socket 410. Additionally, an RF line 429 is provided on the sub-base 26. In this case, for good high-frequency characteristics, the RF power supply lead 446 protruding from the glass 42 and the lead 44 connecting the RF power supply lead 446 and the RF line 429 are preferably short. In this embodiment, by providing the protrusion 417, the RF power supply lead 446 and the lead 44 connecting to the RF power supply lead 446 can be shortened.

[0060] In this embodiment, the wall portion 412 of the socket 410 has, for example, an annular wall portion 415 and a pedestal engagement portion 316 configured to contact the inner surface of the annular wall portion 415. The pedestal engagement portion 316 protrudes beyond the annular wall portion 415 in a direction perpendicular to the main surface 11 and engages with the pedestal 21. The annular wall portion 415 and the pedestal engagement portion 316 are separate components. Therefore, similarly to Embodiment 3, the pedestal 21, thermoelectric module 22, thermistor 25, sub-base 26, semiconductor laser chip 30, and pedestal engagement portion 316 constitute a semi-finished product 320. Furthermore, the annular wall portion 415 and the pedestal engagement portion 316 can also be formed as a single component. By lowering the annular wall portion 415, it is possible to easily connect the short lead 44 between the RF power supply lead pin 446 and the RF line 429.

[0061] exist Figure 3 In the comparative example of the optical semiconductor device 800, a carrier 870 and a bridging substrate 872 are required to shorten the RF power supply lead 45 and the lead wire. In contrast, in this embodiment, the protrusion 417 allows for the shortening of the RF power supply lead 446 and the lead wire 44 connected to the RF power supply lead 446. Therefore, the carrier 870 and the bridging substrate 872 are not required. This reduces component costs.

[0062] In addition, the RF power supply lead pin 446 and the RF line 429 can also be connected by solder or other bonding materials.

[0063] Implementation Method 5

[0064] Figure 11 This is a diagram illustrating the bonding material 60 according to Embodiment 5. In this embodiment, a rounded corner of the bonding material 60 is formed between the side surface of the base portion and the wall portion 12 of the tube seat 10. Specifically, a rounded corner of the bonding material 60 is formed between the side surface of the base 21 and the wall portion 12 of the tube seat 10.

[0065] By increasing the amount of bonding material 60 on the base 21 to form rounded corners, the heat dissipation range is expanded, thereby improving heat dissipation performance. Furthermore, this embodiment can also be combined with any of the embodiments 1 to 4.

[0066] Implementation Method 6

[0067] Figure 12 This is a front view of the semi-finished product 520 according to Embodiment 6. The optical semiconductor device 100 may also include a collimating lens 552 mounted on the pedestal. The collimating lens 552 is, for example, disposed in the semi-finished product 520 at a position that can receive the laser emitted by the semiconductor laser chip 30 on the thermoelectric module 22.

[0068] Figure 13 This diagram illustrates the laser 71 without the collimating lens 552. In this case, the optical semiconductor device 100 is configured as a single-lens system consisting of a lens 51, which serves as a focusing lens, disposed on the cover 50. In such a structure, the components undergo thermal expansion and contraction due to ambient temperature, causing the position of the light-emitting point of the semiconductor laser chip 30 to shift, and sometimes resulting in tracking errors due to reduced coupling efficiency to the optical fiber 70.

[0069] Figure 14 This diagram illustrates the laser 72 with collimating lens 552. In this case, the optical semiconductor device 100 becomes a dual-lens system composed of lens 51 and collimating lens 552. At this time, the lens magnification is lower than that of a single-lens system, and the reduction in coupling efficiency to the optical fiber 70 can be minimized due to positional deviation of the emission point. Therefore, according to this embodiment, tracking errors can be suppressed. Furthermore, this embodiment can also be combined with any of the embodiments 1 to 5.

[0070] Implementation Method 7

[0071] Figure 15 This is a perspective view schematically illustrating the structure of the optical transceiver 1000 according to Embodiment 7. The optical transceiver 1000 includes an optical semiconductor device 801, which is the optical semiconductor device of any of Embodiments 1 to 6. An integrated circuit for driving the optical semiconductor device 801 and the light-receiving device 805 is mounted on a substrate 903. The optical semiconductor device 801, the light-receiving device 805, and the substrate 903 are connected via a flexible printed circuit board 804. A socket 600 for connecting to an optical fiber is installed on the optical semiconductor device 801. Furthermore, the optical semiconductor device 801, the light-receiving device 805, and the substrate 903 are housed in a housing 900 of the optical transceiver 1000. The housing 900 has a structure in which an upper housing 902 is mounted on a lower housing 901.

[0072] To increase the amount of heat transfer between the optical semiconductor device 801 and the lower housing 901, it is preferable to mount a lower heat sink 802 on the optical semiconductor device 801 and to mount the lower heat sink 802 on the lower housing 901. That is, the lower heat sink 802 contacts the housing 900 and the wall 12 of the socket 10. For the bonding between the optical semiconductor device 801 and the lower heat sink 802, and for the bonding between the lower heat sink 802 and the lower housing 901, an insulator on a sheet with high thermal conductivity can be used.

[0073] Figure 16This is a top view schematically illustrating the structure of the optical semiconductor device 801 and the heat sink according to Embodiment 7. The heat sink has a lower heat sink portion 802 and an upper heat sink portion 803. The lower heat sink portion 802 preferably has a semi-circular structure that can be fixed along the total length of the side surface of the socket 10. That is, a semi-circular cut corresponding to the shape of the wall portion 12 of the socket 10 can be formed in the lower heat sink portion 802. The lower heat sink portion 802 contacts the wall portion 12 of the socket 10 at the semi-circular cut. As a result, a large contact area can be ensured between the socket 10 and the lower housing 901, which can improve the ability to radiate heat generated from the optical semiconductor device 801 to areas outside the optical transceiver 1000. Therefore, power consumption can be reduced.

[0074] The upper part 803 of the heat sink also contacts the wall 12 of the tube socket 10. Like the lower part 802, the upper part 803 of the heat sink can also have a semi-circular structure that can fix the tube socket 10 along its entire side length. Furthermore, the upper part 803 of the heat sink has a fin shape, that is, a portion processed into a fin shape. This allows for high heat dissipation from the entire circumference of the tube socket 10. Therefore, the heat dissipation effect can be further improved, and power consumption can be reduced.

[0075] The technical features described in each embodiment can also be used in combination as appropriate.

[0076] Explanation of reference numerals in the attached figures

[0077] 10...Socket; 11...Main surface; 12...Wall; 12a...End face; 13...Part joined with base; 14...Recess; 20...Semi-finished product; 21...Base; 21a~21c...Edge; 22...Thermoelectric module; 23...Pattern; 24...Pattern; 25...Thermistor; 26...Subbase; 27...Through hole; 28...Pattern; 30...Semiconductor laser chip; 40...Lead pin; 42...Glass; 44...Lead; 45...RF power supply lead pin; 50...Cover; 51...Lens; 60...Bonding material; 70...Fiber optic; 71...Laser; 72...Laser; 100...Optical semiconductor device; 200...Optical semiconductor device; 210...Socket; 212...Wall; 215...Annular wall; 215a...End face; 216...Base joint; 300...Optical semiconductor Body device; 310... socket; 312... wall portion; 315... annular wall portion; 315a... end face; 316... base joint portion; 316a... upper surface; 320... semi-finished product; 400... optoelectronic semiconductor device; 410... socket; 412... wall portion; 415... annular wall portion; 417... protrusion; 429... RF circuit; 446... RF power supply lead pin; 520... semi-finished product; 552... collimating lens; 800... optoelectronic semiconductor device; 810... socket; 870... carrier; 872... substrate; 600... socket; 801... optoelectronic semiconductor device; 802... lower part of heat sink; 803... upper part of heat sink; 804... flexible printed circuit board; 805... light receiving device; 900... housing; 901... lower housing; 902... upper housing; 903... substrate; 1000... optical transceiver.

Claims

1. An optical semiconductor device, characterized in that, This optical semiconductor device has the following features: A tube seat having a main surface and an annular wall extending from said main surface; The pedestal portion is joined to the inner side of the wall portion; A semiconductor laser chip is mounted on the pedestal portion; The pattern is disposed on the pedestal portion and electrically connected to the semiconductor laser chip; as well as Lead pins extend from the portion of the main surface of the socket that is surrounded by the wall portion and are connected to the pattern via leads.

2. A photonic semiconductor device, characterized in that, This optical semiconductor device has the following features: A tube seat having a main surface and an annular wall extending from said main surface; The pedestal portion, which joins the inner side of the wall portion; and A semiconductor laser chip is mounted on the pedestal portion. In a direction perpendicular to the main surface of the tube seat, more than half of the base portion is received in the recess formed by the main surface and the wall portion.

3. The optical semiconductor device according to claim 1 or 2, characterized in that, The portion of the wall of the tube seat that engages with the pedestal portion is thicker than the other portions.

4. The optical semiconductor device according to claim 3, characterized in that, When viewed from a direction perpendicular to the main surface, the recess formed by the main surface and the wall portion of the tube seat is D-shaped.

5. The optical semiconductor device according to claim 1, characterized in that, In a direction perpendicular to the main surface of the tube seat, more than half of the base portion is received in the recess formed by the main surface and the wall portion.

6. The optical semiconductor device according to claim 1, characterized in that, In a direction perpendicular to the main surface of the tube socket, the lead pin and the base portion protrude beyond the wall portion. The portion of the pattern that protrudes beyond the wall and the portion of the lead wire that protrudes beyond the wall are connected by the lead wire.

7. The optical semiconductor device according to claim 1, characterized in that, The portion of the wall of the tube seat that engages with the pedestal portion protrudes more than the other portions of the wall in a direction perpendicular to the main surface.

8. The optical semiconductor device according to claim 7, characterized in that, The wall portion of the tube seat has: Annular annular wall portion; and The pedestal joint is configured to contact the inner surface of the annular wall portion, protrude beyond the annular wall portion in a direction perpendicular to the main surface, and engage with the pedestal portion.

9. The optical semiconductor device according to claim 8, characterized in that, The annular wall portion and the pedestal joint portion form a single component.

10. The optical semiconductor device according to claim 8, characterized in that, The annular wall portion and the pedestal joint portion are different components.

11. The optical semiconductor device according to any one of claims 1 to 5, characterized in that, The wall portion of the tube seat has: Annular annular wall portion; and The pedestal joint is configured to contact the inner surface of the annular wall portion and engage with the pedestal portion.

12. The optical semiconductor device according to claim 11, characterized in that, The entire pedestal portion is housed within the recess formed by the main surface and the wall portion.

13. The optical semiconductor device according to claim 11 or 12, characterized in that, The annular wall portion and the pedestal joint portion are different components.

14. The optical semiconductor device according to any one of claims 1 to 13, characterized in that, This optical semiconductor device has RF power supply leads. The RF power supply lead pin is provided on the protrusion, which is formed on the main surface of the socket.

15. The optical semiconductor device according to any one of claims 1 to 14, characterized in that, The optical semiconductor device includes a cover disposed on the end face of the wall portion of the tube base opposite to the main surface, and covering the recess formed by the main surface and the wall portion.

16. The optical semiconductor device according to any one of claims 1 to 15, characterized in that, The pedestal part has: A base, which engages with the wall portion of the tube seat; and A thermoelectric module is mounted on the pedestal and is equipped with the semiconductor laser chip.

17. The optical semiconductor device according to claim 16, characterized in that, The tube base is electrically connected to the surface of the thermoelectric module disposed therein via a through hole formed in the pedestal.

18. The optical semiconductor device according to any one of claims 1 to 17, characterized in that, A rounded corner of the joining material is formed between the side of the pedestal portion and the wall portion of the tube seat.

19. The optical semiconductor device according to any one of claims 1 to 18, characterized in that, The optical semiconductor device includes a collimating lens mounted on the pedestal.

20. An optical transceiver, characterized in that, The optical transceiver comprises the optical semiconductor device as described in any one of claims 1 to 19.

21. The optical transceiver according to claim 20, characterized in that, This optical transceiver features: A housing that accommodates the optical semiconductor device and a substrate connected to the optical semiconductor device; and The first heat sink contacts the wall portion of the outer casing and the tube socket. The first heat sink has a semi-circular cut that corresponds to the shape of the wall portion of the tube seat, and the cut contacts the wall portion of the tube seat.

22. The optical transceiver according to claim 20 or 21, characterized in that, The optical transceiver includes a second heat sink that contacts the wall of the tube socket and has a fin shape.

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