Ni monatomic / phosphorus / g-c3n4 composite material and preparation method and application thereof
By doping phosphorus and Ni single atoms onto hollow tubular g-C3N4, a Ni single atom/phosphorus/g-C3N4 composite material is formed, which solves the problems of narrow photoresponse range and high recombination rate of photogenerated carriers in g-C3N4 photocatalyst, and achieves efficient photocatalytic water splitting to produce hydrogen.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- SHANDONG UNIV
- Filing Date
- 2026-04-30
- Publication Date
- 2026-06-02
AI Technical Summary
Existing graphitic carbon nitride (g-C3N4) photocatalysts have a narrow photoresponse range, high recombination rate of photogenerated carriers, small specific surface area, and low electrical conductivity, resulting in photocatalytic water splitting efficiency lower than the industrial standard.
A Ni single-atom/phosphorus/g-C3N4 composite material is used. By doping phosphorus and Ni single atoms on a hollow tubular g-C3N4 matrix, a cooperative electronic configuration is formed, which promotes charge separation and transport.
It significantly improved the photocatalytic hydrogen production performance, achieving a hydrogen production rate of 2707.7 μmol h⁻¹g⁻¹ and an apparent quantum efficiency of 8.8%, and exhibited excellent stability in 6 photocatalytic hydrogen production cycles.
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Figure CN122124843A_ABST