A deposition apparatus and a vapor deposition apparatus

Abstract

This invention discloses a deposition apparatus and a vapor deposition device, relating to the field of semiconductor technology. The deposition apparatus includes a base frame, a deposition chamber, a drive mechanism, a transmission ring, an induction coil, and a detection element. The deposition chamber is disposed within the base frame, the drive mechanism is mounted on the base frame and connected to the transmission ring, the transmission ring is sleeved outside the deposition chamber, the induction coil is connected to the transmission ring, and the detection element is mounted in the deposition chamber and electrically connected to the drive mechanism. The deposition chamber is used to deposit material onto a wafer, the detection element is used to detect the uniformity of the deposited film thickness, and the drive mechanism, when the film thickness is uneven, drives the induction coil to rotate to the corresponding position where the film thickness is thinner via the transmission ring. The induction coil generates an alternating magnetic field to accelerate deposition. The deposition apparatus provided by this invention can compensate for the thickness of thinner areas of the film formed on the wafer surface, improve film uniformity, enhance deposition effect, and ensure product quality.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, and more specifically, to a deposition apparatus and a vapor deposition device. Background Technology

[0002] Currently, vapor deposition technology is commonly used in semiconductor manufacturing. However, current vapor deposition equipment is prone to poor deposition uniformity during wafer deposition due to external factors such as the environment. This results in uneven film thickness on the wafer surface, poor deposition quality, and directly affects product quality.

[0003] In view of this, designing and manufacturing a deposition apparatus and vapor deposition equipment with good deposition effect and product quality is particularly important, especially in semiconductor production. Summary of the Invention

[0004] The purpose of this invention is to provide a deposition apparatus that can compensate for the thickness of thinner areas of the film layer formed on the wafer surface, thereby improving the film uniformity, enhancing the deposition effect, and ensuring product quality.

[0005] Another objective of this invention is to provide a vapor deposition apparatus capable of compensating for the thickness of thinner areas of the film formed on the wafer surface, thereby improving film uniformity, enhancing deposition effect, and ensuring product quality.

[0006] The present invention is achieved by the following technical solution.

[0007] A deposition apparatus includes a base frame, a deposition chamber, a drive mechanism, a transmission ring, an induction coil, and a detection element. The deposition chamber is disposed within the base frame, the drive mechanism is mounted on the base frame and connected to the transmission ring, the transmission ring is sleeved outside the deposition chamber, the induction coil is connected to the transmission ring, and the detection element is mounted in the deposition chamber and electrically connected to the drive mechanism. The deposition chamber is used to deposit on a wafer, the detection element is used to detect the uniformity of the thickness of the deposited film, and the drive mechanism is used to drive the induction coil to rotate to the corresponding position of the thinner film thickness via the transmission ring when the film thickness is uneven. The induction coil is used to generate an alternating magnetic field to accelerate deposition.

[0008] Optionally, the drive mechanism includes a first drive member and a transmission member. The transmission ring is mounted on the base frame and can rotate relative to the base frame about its axial direction. The first drive member is connected to the transmission member, and the transmission member cooperates with the transmission ring.

[0009] Optionally, the transmission component is a gear, and the transmission ring is provided with an annular rack, with the gear meshing with the annular rack.

[0010] Optionally, the transmission component includes a drive wheel and a transmission belt, the first driving component is connected to the drive wheel, and the drive wheel is connected to the transmission ring via the transmission belt.

[0011] Optionally, the detection element includes a camera unit and a detection unit, which are electrically connected. The camera unit is used to acquire real-time images of the wafer, and the detection unit is used to calculate the film thickness at various locations on the wafer surface based on the real-time images.

[0012] Optionally, the deposition chamber includes a chamber body and a support platform, the support platform being movably installed inside the chamber body and used to support the wafer, and a drive ring being sleeved outside the chamber body.

[0013] Optionally, the deposition chamber also includes a plug-in plate, which is pluggably disposed in the chamber to divide the chamber into a reaction cavity and a transfer cavity. The position of the induction coil corresponds to the position of the reaction cavity. A support stage is disposed in the transfer cavity and is used to drive the wafer into the reaction cavity after the plug-in plate is pulled out of the chamber.

[0014] Optionally, the chamber is provided with a first vent and a second vent. The first vent is connected to the reaction cavity, and the second vent is connected to the transfer cavity. The first vent is used to allow the reaction gas to enter the reaction cavity, and the second vent is used to allow the inert gas to enter the transfer cavity. The deposition chamber also includes a first pressure gauge and a second pressure gauge. The first pressure gauge is installed in the reaction cavity, and the second pressure gauge is installed in the transfer cavity. The first pressure gauge is used to detect the pressure in the reaction cavity, and the second pressure gauge is used to detect the pressure in the transfer cavity, so as to control the pressure in the reaction cavity to be equal to the pressure in the transfer cavity before the insert plate is pulled out of the chamber.

[0015] Optionally, the sedimentation chamber also includes a second drive unit and a stirring blade. The second drive unit is installed in the chamber body and connected to the stirring blade, which is disposed in the reaction cavity.

[0016] A vapor deposition apparatus includes the aforementioned deposition device, comprising a base frame, a deposition chamber, a drive mechanism, a transmission ring, an induction coil, and a detection element. The deposition chamber is disposed within the base frame, the drive mechanism is mounted on the base frame and connected to the transmission ring, the transmission ring is sleeved outside the deposition chamber, the induction coil is connected to the transmission ring, and the detection element is mounted in the deposition chamber and electrically connected to the drive mechanism. The deposition chamber is used to deposit on a wafer, the detection element is used to detect the uniformity of the deposited film thickness, and the drive mechanism is used to drive the induction coil to rotate to the corresponding position of the thinner film thickness via the transmission ring when the film thickness is uneven. The induction coil is used to generate an alternating magnetic field to accelerate deposition.

[0017] The deposition apparatus and vapor deposition equipment provided by this invention have the following beneficial effects: The deposition apparatus provided by this invention includes a deposition chamber housed within a base frame, a drive mechanism mounted on the base frame and connected to a transmission ring, which is fitted over the deposition chamber. An induction coil is connected to the transmission ring, and a detection element is mounted in the deposition chamber and electrically connected to the drive mechanism. The deposition chamber is used to deposit material onto a wafer, the detection element is used to detect the uniformity of the deposited film thickness, and the drive mechanism, when the film thickness is uneven, drives the induction coil via the transmission ring to rotate to the corresponding position where the film thickness is thinner. The induction coil generates an alternating magnetic field to accelerate deposition. Compared with existing technologies, the deposition apparatus provided by this invention, due to the use of an induction coil connected to the transmission ring and a detection element electrically connected to the drive mechanism, can compensate for the thickness of thinner areas on the wafer surface, improve film uniformity, enhance deposition effect, and ensure product quality.

[0018] The vapor deposition equipment provided by the present invention includes a deposition apparatus that can compensate for the thickness of thinner areas of the film layer formed on the wafer surface, improve the uniformity of the film layer, enhance the deposition effect, and ensure product quality. Attached Figure Description

[0019] To more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of the present invention and should not be regarded as a limitation on the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0020] Figure 1 This is a schematic diagram of the deposition apparatus provided in an embodiment of the present invention; Figure 2 This is a schematic diagram of the deposition apparatus provided in an embodiment of the present invention when the insert plate separates the reaction cavity and the transfer cavity; Figure 3 This is a schematic diagram of the deposition apparatus provided in an embodiment of the present invention when the support stage drives the wafer into the reaction cavity; Figure 4 This is a schematic diagram of the connection between the drive mechanism and the transmission ring in the deposition apparatus provided in an embodiment of the present invention.

[0021] Icons: 100-Deposition apparatus; 110-Base frame; 120-Deposition chamber; 121-Bed body; 1211-First vent; 1212-Second vent; 122-Support platform; 123-Insertion plate; 124-Reaction cavity; 125-Transfer cavity; 126-First pressure gauge; 127-Second pressure gauge; 128-Second drive component; 129-Stirring blade; 130-Drive mechanism; 131-First drive component; 132-Transmission component; 133-Gear; 140-Transmission ring; 141-Annular rack; 150-Induction coil; 160-Detection element; 200-Wafer. Detailed Implementation

[0022] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. The components of the embodiments of the present invention described and shown in the accompanying drawings can generally be arranged and designed in various different configurations.

[0023] Therefore, the following detailed description of the embodiments of the invention provided in the accompanying drawings is not intended to limit the scope of the claimed invention, but merely to illustrate selected embodiments of the invention. All other embodiments obtained by those skilled in the art based on the embodiments of the invention without inventive effort are within the scope of protection of the invention.

[0024] It should be noted that similar labels and letters in the following figures indicate similar items. Therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures.

[0025] In the description of this invention, it should be noted that the terms "inner," "outer," "upper," "lower," "horizontal," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, or the orientation or positional relationship commonly used when the product of the invention is in use. They are only for the convenience of describing the invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of the invention. In addition, the terms "first," "second," "third," etc., are only used to distinguish descriptions and should not be construed as indicating or implying relative importance.

[0026] In the description of this invention, it should also be noted that, unless otherwise explicitly specified and limited, the terms "set," "connected," "installed," and "connected" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0027] The following detailed description of some embodiments of the present invention is provided in conjunction with the accompanying drawings. Unless otherwise specified, features in the following embodiments can be combined with each other.

[0028] Please refer to the reference. Figures 1 to 4 This invention provides a vapor deposition apparatus (not shown) for performing vapor deposition on semiconductors. It can compensate for thinner areas of the film formed on the surface of a wafer 200, improving film uniformity, enhancing deposition effect, and ensuring product quality.

[0029] It should be noted that the vapor deposition equipment includes a wafer transfer device (not shown) and a deposition device 100. The wafer transfer device is connected to the deposition device 100 and is used to deliver the wafer 200 to the deposition device 100. The deposition device 100 is used to perform vapor deposition on the wafer 200 to achieve automated deposition of the wafer 200 with high deposition efficiency.

[0030] The deposition apparatus 100 includes a base frame 110, a deposition chamber 120, a drive mechanism 130, a transmission ring 140, an induction coil 150, and a detection element 160. The deposition chamber 120 is disposed within the base frame 110. The drive mechanism 130 is mounted on the base frame 110 and connected to the transmission ring 140, which is sleeved around the deposition chamber 120. The induction coil 150 is connected to the transmission ring 140. The drive mechanism 130 drives the transmission ring 140 to rotate around its axial direction, thereby synchronously driving the induction coil 150 to rotate circumferentially along the deposition chamber 120. The detection element 160 is mounted in the deposition chamber 120 and electrically connected to the drive mechanism 130. The deposition chamber 120 is used to deposit film on the wafer 200. The detection element 160 is used to detect the uniformity of the thickness of the deposited film. When the film thickness is uneven, the drive mechanism 130 drives the induction coil 150 to rotate to the corresponding position of the thinner film through the transmission ring 140. The induction coil 150 generates an alternating magnetic field to accelerate deposition, speeding up the deposition rate of the thinner film position to be faster than the deposition rate of the thicker film position, thereby compensating for the thickness difference until the film thickness is uniform. In this way, thickness compensation can be performed on the thinner positions of the film formed on the surface of the wafer 200, improving the film uniformity, enhancing the deposition effect, and ensuring product quality.

[0031] Furthermore, the wafer 200 is placed horizontally in the deposition chamber 120, that is, the axial direction of the wafer 200 is collinear with the axial direction of the drive ring 140. During the deposition process of the wafer 200, due to the influence of external factors such as the environment, the uniformity of the deposition in the circumferential direction of the wafer 200 is easily poor, resulting in uneven thickness of the film layer formed on the surface of the wafer 200 along the circumferential direction of the wafer 200. In this invention, the uniformity of the film thickness on the surface of wafer 200 is first detected by the detection element 160. If the film thickness is uneven, the drive mechanism 130 drives the induction coil 150 to rotate to the corresponding position where the film thickness is thinner via the transmission ring 140. Then, the inductively coupled plasma generator applies an alternating current to the induction coil 150 through a high-frequency power supply (usually 13.56MHz) to generate an alternating magnetic field, which ionizes inert gases such as argon to form plasma (the eddy current induced by the magnetic field converts electrical energy into heat energy, generating a high-temperature environment of over 10000K, causing neutral atoms and molecules to dissociate into ions and electrons), thereby accelerating the deposition of plasma and rapidly thickening the thinner parts of the film on the surface of wafer 200. In other words, thickness compensation is performed on the thinner parts of the film on the surface of wafer 200 to ensure the uniformity of the film.

[0032] The drive mechanism 130 includes a first drive member 131 and a transmission member 132. A transmission ring 140 is mounted on a base frame 110 and is rotatable relative to the base frame 110 about its axial direction. The base frame 110 can limit the movement of the transmission ring 140. The first drive member 131 is connected to the transmission member 132, and the transmission member 132 cooperates with the transmission ring 140. The first drive member 131 drives the transmission ring 140 to rotate about its axial direction via the transmission member 132, thereby causing the induction coil 150 to rotate circumferentially along the deposition chamber 120.

[0033] In this embodiment, the transmission component 132 is a gear 133, and the transmission ring 140 is provided with an annular rack 141. The gear 133 meshes with the annular rack 141. The first driving component 131 is used to drive the gear 133 to rotate, so that the transmission ring 140 is driven to rotate through the meshing of the gear 133 and the annular rack 141, thereby achieving a stable transmission function. However, it is not limited to this. In other embodiments, the transmission component 132 includes a drive wheel and a transmission belt. The first driving component 131 is connected to the drive wheel, and the drive wheel is connected to the transmission ring 140 through the transmission belt. The first driving component 131 is used to drive the drive wheel to rotate, and the drive wheel drives the transmission ring 140 to rotate through the transmission belt. That is, the first driving component 131 drives the transmission ring 140 to rotate through belt drive, which can also achieve the transmission function.

[0034] The detection element 160 includes an imaging unit (not shown) and a detection unit (not shown). The imaging unit is electrically connected to the detection unit. The imaging unit is used to acquire real-time images of the wafer 200, and the detection unit is used to calculate the film thickness at various locations on the surface of the wafer 200 based on the real-time images. The detection unit is electrically connected to the drive mechanism 130. The detection unit is used to control the drive mechanism 130 to start based on the calculation results, so as to drive the induction coil 150 to rotate to the corresponding position where the film thickness is thinner via the transmission ring 140. Specifically, during the calculation process of the detection unit, the detection unit first acquires the reflection spectrum of the wafer 200 based on the real-time images, and then fits the reflection spectrum with the multilayer film optical model to invert and obtain the film thickness at various locations on the surface of the wafer 200.

[0035] The deposition chamber 120 includes a chamber body 121 and a support platform 122. The support platform 122 is movably installed inside the chamber body 121 and is used to support the wafer 200. The support platform 122 can drive the wafer 200 to rise or fall. A drive ring 140 is sleeved on the outside of the chamber body 121 so that the drive mechanism 130 can drive the induction coil 150 to rotate around the circumference of the deposition chamber 120 through the drive ring 140.

[0036] In this embodiment, the transmission ring 140 is disposed above the chamber body 121, and its vertical projection covers the outside of the chamber body 121, meaning the height of the transmission ring 140 is higher than the height of the chamber body 121, while the height of the induction coil 150 matches the height of the chamber body 121. However, this is not the only embodiment. In other embodiments, the transmission ring 140 may be disposed below the chamber body 121 or directly covered by the chamber body 121; the specific placement of the transmission ring 140 is not limited.

[0037] Optionally, the deposition chamber 120 also includes a insert plate 123. The insert plate 123 is detachably disposed within the chamber body 121 to divide the chamber body 121 into a reaction cavity 124 and a transfer cavity 125. The position of the induction coil 150 corresponds to the position of the reaction cavity 124. The support stage 122 is disposed in the transfer cavity 125. The support stage 122 is used to drive the wafer 200 into the reaction cavity 124 after the insert plate 123 is pulled out of the chamber body 121, so that the wafer 200 can perform vapor deposition within the reaction cavity 124.

[0038] Furthermore, the chamber 121 is provided with a first vent 1211 and a second vent 1212. The first vent 1211 is connected to the reaction cavity 124, and the second vent 1212 is connected to the transfer cavity 125. The first vent 1211 is used to allow reactive gas to enter the reaction cavity 124, and the second vent 1212 is used to allow inert gas to enter the transfer cavity 125. Specifically, the deposition chamber 120 also includes a first pressure gauge 126 and a second pressure gauge 127. The first pressure gauge 126 is installed in the reaction cavity 124, and the second pressure gauge 127 is installed in the transfer cavity 125. The first pressure gauge 126 is used to detect the pressure in the reaction cavity 124, and the second pressure gauge 127 is used to detect the pressure in the transfer cavity 125, so as to control the pressure in the reaction cavity 124 and the pressure in the transfer cavity 125 to be equal before the insert plate 123 is pulled out of the chamber 121.

[0039] Optionally, the deposition chamber 120 further includes a second drive unit 128 and a stirring blade 129. The second drive unit 128 is installed in the chamber body 121 and connected to the stirring blade 129, which is disposed in the reaction cavity 124. The second drive unit 128 is used to drive the stirring blade 129 to rotate, so as to stir and mix the reaction gas in the reaction cavity 124, thereby further improving the deposition uniformity.

[0040] It should be noted that during the deposition process of the deposition apparatus 100, the insert plate 123 is first inserted into the chamber 121 to divide the chamber 121 into a mutually isolated reaction cavity 124 and a transfer cavity 125. Then, various reactive gases are introduced into the reaction cavity 124 through the first vent 1211. Next, the second drive unit 128 drives the stirring blade 129 to rotate, so as to stir and mix the various reactive gases and improve the deposition uniformity. Then, inert gas is introduced into the transfer cavity 125 through the second vent 1212 until the gas pressure of the reaction cavity 124 and the transfer cavity 125 are the same (determined by the first pressure gauge 126 and the second pressure gauge 127). Then, the insert plate 123 is pulled out of the chamber 121 to connect the reaction cavity 124 and the transfer cavity 125. Then, the support stage 122 drives the wafer 200 to rise until the wafer 200 enters the reaction cavity 124. Then, vapor deposition is performed on the wafer 200.

[0041] Optionally, both the first drive component 131 and the second drive component 128 are electric motors, pneumatic motors, or hydraulic motors.

[0042] The deposition apparatus 100 provided in this embodiment of the invention includes a deposition chamber 120 disposed within a base frame 110, a drive mechanism 130 mounted on the base frame 110 and connected to a transmission ring 140, the transmission ring 140 sleeved outside the deposition chamber 120, an induction coil 150 connected to the transmission ring 140, and a detection element 160 mounted on the deposition chamber 120 and electrically connected to the drive mechanism 130. The deposition chamber 120 is used to deposit on a wafer 200, the detection element 160 is used to detect the uniformity of the thickness of the deposited film, and the drive mechanism 130 is used to drive the induction coil 150 to rotate to the corresponding position where the film thickness is thinner via the transmission ring 140 when the film thickness is uneven. The induction coil 150 is used to generate an alternating magnetic field to accelerate deposition. Compared with the prior art, the deposition apparatus 100 provided by the present invention, by employing an induction coil 150 connected to the transmission ring 140 and a detection element 160 electrically connected to the drive mechanism 130, can compensate for the thickness of thinner areas of the film layer formed on the surface of the wafer 200, improve the uniformity of the film layer, enhance the deposition effect, and ensure product quality. This results in better deposition effect and higher product yield in the vapor deposition equipment.

[0043] The above are merely preferred embodiments of the present invention and are not intended to limit the present invention. Various modifications and variations can be made to the present invention by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the scope of protection of the present invention.

Claims

1. A deposition apparatus, characterized in that, The device includes a base frame, a deposition chamber, a drive mechanism, a transmission ring, an induction coil, and a detection element. The deposition chamber is disposed within the base frame. The drive mechanism is mounted on the base frame and connected to the transmission ring, which is sleeved outside the deposition chamber. The induction coil is connected to the transmission ring. The detection element is mounted in the deposition chamber and electrically connected to the drive mechanism. The deposition chamber is used to deposit material onto a wafer. The detection element is used to detect the uniformity of the deposited film thickness. When the film thickness is uneven, the drive mechanism drives the induction coil to rotate to the corresponding position where the film thickness is thinner via the transmission ring. The induction coil generates an alternating magnetic field to accelerate deposition.

2. The deposition apparatus according to claim 1, characterized in that, The driving mechanism includes a first driving member and a transmission member. The transmission ring is mounted on the base frame and can rotate relative to the base frame about its axial direction. The first driving member is connected to the transmission member, and the transmission member cooperates with the transmission ring.

3. The deposition apparatus according to claim 2, characterized in that, The transmission component is a gear, and the transmission ring is provided with an annular rack, the gear meshing with the annular rack.

4. The deposition apparatus according to claim 2, characterized in that, The transmission component includes a drive wheel and a transmission belt. The first driving component is connected to the drive wheel, and the drive wheel is connected to the transmission ring via the transmission belt.

5. The deposition apparatus according to claim 1, characterized in that, The detection element includes a camera unit and a detection unit. The camera unit is electrically connected to the detection unit. The camera unit is used to acquire real-time images of the wafer, and the detection unit is used to calculate the film thickness at various locations on the wafer surface based on the real-time images.

6. The deposition apparatus according to any one of claims 1-5, characterized in that, The deposition chamber includes a chamber body and a support platform. The support platform is movably installed inside the chamber body and is used to support the wafer. The transmission ring is sleeved outside the chamber body.

7. The deposition apparatus according to claim 6, characterized in that, The deposition chamber also includes a plug plate, which is detachably disposed within the chamber to divide the chamber into a reaction cavity and a transfer cavity. The position of the induction coil corresponds to the position of the reaction cavity. The support platform is disposed in the transfer cavity and is used to drive the wafer into the reaction cavity after the plug plate is pulled out of the chamber.

8. The deposition apparatus according to claim 7, characterized in that, The chamber is provided with a first vent and a second vent. The first vent is connected to the reaction cavity, and the second vent is connected to the transfer cavity. The first vent is used to allow the reaction gas to enter the reaction cavity, and the second vent is used to allow the inert gas to enter the transfer cavity. The deposition chamber also includes a first pressure gauge and a second pressure gauge. The first pressure gauge is installed in the reaction cavity, and the second pressure gauge is installed in the transfer cavity. The first pressure gauge is used to detect the pressure in the reaction cavity, and the second pressure gauge is used to detect the pressure in the transfer cavity, so as to control the pressure in the reaction cavity to be equal to the pressure in the transfer cavity before the insert plate is pulled out of the chamber body.

9. The deposition apparatus according to claim 7, characterized in that, The deposition chamber further includes a second drive unit and a stirring blade. The second drive unit is installed in the chamber body and connected to the stirring blade, which is disposed inside the reaction cavity.

10. A vapor deposition apparatus, characterized in that, Includes the deposition apparatus as described in any one of claims 1-9.

Images