Light emitting diode and light emitting device

Abstract

This invention provides a light-emitting diode (LED) comprising a substrate and a multilayer structure stacked on the substrate. The multilayer structure, starting from the substrate side, includes at least a first electrical connection layer, an insulating layer, a second electrical connection layer, and a semiconductor light-emitting sequence. The semiconductor light-emitting sequence, starting from the side away from the substrate, includes a first semiconductor layer, an active layer, and a second semiconductor layer. The first electrical connection layer is at least partially in contact with the first semiconductor layer. The second electrical connection layer is electrically connected to the second semiconductor layer. A first electrode is electrically connected to the first semiconductor layer through the first electrical connection layer. A second electrode is electrically connected to the second semiconductor layer through the second electrical connection layer. The semiconductor light-emitting sequence, the first electrode, and the second electrode are located on the same side of the substrate. An intermediate layer is located between the substrate and the first electrode, with at least a portion of its surface in contact with the first electrode. The LED also includes a protective metal layer extending at least from one side of the first electrical connection layer, passing through the first electrical connection layer and the insulating layer, and contacting the intermediate layer. The protective metal layer includes at least one metal element different from that of the first electrical connection layer.

Description

Technical Field

[0001] This invention relates to the field of semiconductor devices, specifically to a light-emitting diode and a light-emitting device. Background Technology

[0002] The horizontal and vertical structure light-emitting diode supports the back side of the semiconductor sequence through a supporting substrate. The PN electrical connection layer is located between the supporting substrate and the semiconductor. The PN electrode is led out from the back side of the light-emitting surface of the light-emitting semiconductor sequence through connection with the PN electrical connection layer. Without the electrode blocking the light emission, it ensures good expansion of large current and has good luminous efficiency.

[0003] In current horizontal-vertical LEDs, the PN junction layer is insulated and isolated by an insulating layer. The P junction layer is electrically connected to the P-type layer of the semiconductor sequence, and the N junction layer is electrically connected to the N-type layer of the semiconductor sequence. An intermediate layer exists between the N-electrode and the substrate, with the same material as the P-electrode junction layer. Part of the N-electrode junction layer passes through the insulating layer and connects to the intermediate layer, achieving the electrical connection between the N-electrode and the N-type layer. For good conductivity, the intermediate layer mainly consists of the metallic material Au. To improve the chip's light extraction efficiency, the N-electrode junction layer mainly consists of highly reflective metals such as aluminum, chromium, silver, or their alloys. However, it has been found that in conventional horizontal-vertical structure chip bonding processes, under the influence of heat and force, Au can easily fuse with metals such as aluminum, chromium, and silver at the contact point between the N-electrode junction layer and the intermediate layer. This can further increase the chip voltage and even lead to the risk of wire bonding and electrode detachment of the N-electrode, resulting in losses in appearance and electrical yield.

[0004] Therefore, it is necessary to refine the design and improve the verification of the horizontal and vertical structure chips to avoid the above problems. Summary of the Invention

[0005] This invention provides a light-emitting diode, including a substrate and a multilayer structure stacked on the substrate. The multilayer structure, starting from the substrate side, includes at least a first electrical connection layer, an insulating layer, a second electrical connection layer, and a semiconductor light-emitting sequence in sequence. The semiconductor light-emitting sequence, starting from the side furthest from the substrate, includes a first semiconductor layer, an active layer, and a second semiconductor layer in sequence; The first electrical connection layer is at least partially in contact with the first semiconductor layer; The second electrical connection layer is electrically connected to the second semiconductor layer; The first electrode is electrically connected to the first semiconductor layer through the first electrical connection layer; The second electrode is electrically connected to the second semiconductor layer through the second electrical connection layer; The semiconductor light-emitting sequence is located on the same side of the substrate as the first and second electrodes; An intermediate layer is located between the substrate and the first electrode, with at least a portion of its surface in contact with the first electrode; It also includes a protective metal layer that extends at least from one side of the first electrical connection layer, through the first electrical connection layer and the insulating layer, and contacts the intermediate layer. The protective metal layer includes at least one metal element that is different from the first electrical connection layer.

[0006] The present invention also provides a light-emitting diode, including a substrate and a multilayer structure stacked on the substrate, wherein the multilayer structure includes at least a first electrical connection layer, an insulating layer, a second electrical connection layer, and a semiconductor light-emitting sequence, starting from the substrate side. The semiconductor light-emitting sequence, starting from the side furthest from the substrate, includes a first semiconductor layer, an active layer, and a second semiconductor layer in sequence; The first electrical connection layer is at least partially in contact with the first semiconductor layer; The second electrical connection layer is electrically connected to the second semiconductor layer; The first electrode is electrically connected to the first semiconductor layer through the first electrical connection layer; The second electrode is electrically connected to the second semiconductor layer through the second electrical connection layer; The semiconductor light-emitting sequence is located on the same side of the substrate as the first and second electrodes; An intermediate layer is located between the substrate and the first electrode, with at least a portion of its surface in contact with the first electrode; The insulating layer has an opening that exposes a portion of the surface of the intermediate layer, and the light-emitting diode also has a protective metal layer that fills the opening and contacts the intermediate layer.

[0007] Preferably, the protective metal layer of the light-emitting diode provided by the present invention further covers the surface of the first electrical connection layer near the substrate.

[0008] Preferably, the protective metal layer of the light-emitting diode provided by the present invention is formed by a single layer or multiple layers of stacked metals.

[0009] Preferably, the protective metal layer of the light-emitting diode provided by the present invention includes at least the metal element tungsten.

[0010] Preferably, the light-emitting diode semiconductor light-emitting sequence provided by the present invention includes at least one first through hole, the opening of the first through hole is located on one side of the second semiconductor layer and has a bottom contact with the first semiconductor layer, the first electrical connection layer fills the bottom of the first through hole through the opening of the first through hole, and the sidewall of the first through hole is insulated by an insulating layer.

[0011] Preferably, the light-emitting diode provided by the present invention includes at least one second through-hole, the opening of the second through-hole is located on one side of the first electrical connection layer, and has a bottom contact with the intermediate layer, wherein the protective metal layer fills through the opening of the second through-hole to the bottom of the second through-hole and contacts the intermediate layer.

[0012] Preferably, the second through-hole of the light-emitting diode provided by the present invention is columnar, conical, or annular.

[0013] Preferably, in the light-emitting diode provided by the present invention, the projection of the second through hole on the substrate at least partially coincides with the projection of the intermediate layer on the substrate, but does not coincide with the projection of the second electrical connection layer on the substrate.

[0014] Preferably, the second through-hole of the light-emitting diode provided by the present invention is not located at the center position below the first electrode.

[0015] Preferably, the light-emitting diode provided by the present invention further includes a bonding layer located between the first electrode connection layer and the substrate.

[0016] Preferably, the thickness of the protective metal layer of the light-emitting diode provided by the present invention between the first electrical connection layer and the bonding layer is between 50-500 nm.

[0017] Preferably, the light-emitting diode provided by the present invention has a metal reflective layer and a transparent conductive layer between the second electrical connection layer and the second semiconductor layer.

[0018] Preferably, the first and second electrical connection layers of the light-emitting diode provided by the present invention are formed by a single layer or multiple layers of metal stacking.

[0019] Preferably, the intermediate layer and the second electrical connection layer of the light-emitting diode provided by the present invention are made of the same material.

[0020] Preferably, the first electrical connection layer of the light-emitting diode provided by the present invention includes at least one metal with a reflectivity greater than 80%.

[0021] The present invention also provides a light-emitting device, including an encapsulation substrate, the surface of which includes at least two conductive layers that are insulated from each other, any light-emitting diode of the present invention being fixed on the surface of the encapsulation substrate, the first electrode and the second electrode being connected by metal wires and the two conductive layers that are insulated from each other, and the surfaces of the encapsulation substrate and the light-emitting diode being covered by encapsulation resin.

[0022] This invention isolates the intermediate layer from the first electrical connection layer by setting a protective metal layer inside the light-emitting diode, preventing them from contacting each other. This prevents the metal of the intermediate layer from fusing with the metal of the first electrical connection layer during subsequent bonding processes due to high temperature and pressure, thereby reducing the risk of voltage rise in the light-emitting diode and wire bonding failure of the first electrode, and improving the reliability of the light-emitting diode. Attached Figure Description

[0023] Figure 1 A schematic diagram of the structure of an existing light-emitting diode. Figure 2 This is a schematic diagram of the structure of the light-emitting diode in Example 1. Figure 3-11 This is a schematic diagram of the structure obtained in each step of the fabrication method of the light-emitting diode in Example 1. Figure 12 This is a top view of the light-emitting diode in Embodiment 1. Figure 13 This is a structural diagram illustrating the manufacturing process of Example 2. Figure 14 This is a schematic diagram of the structure of the light-emitting diode in Example 2. Figure 15 This is a schematic diagram of the structure in another method for manufacturing a light-emitting diode as described in Example 2. Figure 16 This is a schematic diagram of another type of light-emitting diode in Embodiment 2. Figure 17 This is a schematic diagram of the structure of the light-emitting diode in Example 3. Figure 18 This is a schematic diagram of the light-emitting device in Embodiment 4. Detailed Implementation

[0024] Figure 1 This diagram shows a schematic cross-sectional view of a prior art horizontally and vertically structured light-emitting diode (LED). The LED includes a substrate 008 and a multilayer structure on the substrate. The multilayer structure, starting from the substrate side, sequentially includes a bonding layer 007, a first electrical connection layer 006, an insulating layer 005, a second electrical connection layer 004, and a semiconductor light-emitting sequence. The LED also includes a first electrode 011 and a second electrode 012 for external wire bonding. The semiconductor light-emitting sequence is located on the same side of the substrate as the first electrode 011 and the second electrode 012.

[0025] The semiconductor light-emitting sequence, starting from the side furthest from the substrate 008, sequentially includes a first semiconductor layer 001, an active layer 002, and a second semiconductor layer 003, and also includes at least one first via 009. The first via 009 opens from one side of the second semiconductor layer 003 and extends through the second semiconductor layer 003, the active layer 002, and to the first semiconductor layer 001. A second electrical connection layer 004 is located on one side of the second semiconductor layer 003 and does not cover the opening of the first via 009. An insulating layer 005 extends from the opening of the first via 009 on one side of the second electrical connection layer 004 to cover the sidewall of the first via 009 and exposes the bottom of the first via 009. The second electrical connection layer 004 is located on one side of the second semiconductor layer 003 and is electrically connected to the second semiconductor layer 003. It also extends horizontally to below the second electrode 012 and contacts the second electrode 012. The second electrode 012 is electrically connected to the second semiconductor layer 003 through the second electrical connection layer 004.

[0026] The light-emitting diode also includes an intermediate layer 014 located between the first electrode 011 and the substrate and in contact with the first electrode 011. The intermediate layer 014 also has at least one second through-hole 010 below it. The second through-hole 010 opens from one side of the insulating layer 005 and extends through the insulating layer 005 to the intermediate layer 014. The first electrical connection layer 006 covers the side surface of the insulating layer 005 and fills the first through-hole 009 until the bottom of the first through-hole 009 is in contact with the first semiconductor layer 001. It also fills the second through-hole 010 until the bottom of the second through-hole 010 is in contact with the intermediate layer 014, thereby realizing the electrical connection between the first electrode 011 and the first semiconductor layer 001.

[0027] The first electrical connection layer 006 generally consists of highly reflective metals, such as aluminum, chromium, silver, or their alloys. The intermediate layer 014 is made of the same material as the second electrical connection layer 004, generally consisting of highly conductive metals, such as Au. In the chip manufacturing process, the bonding layer 007 is tightly stacked with the first electrical connection layer 006. Appropriate pressure is applied using a bonding device, and the layer is placed in an annealing furnace for annealing. During annealing, diffusion and inter-fusion occur between the metals of the bonding layer 007 and the first electrical connection layer 006, resulting in a strong bond through metallic bonds, covalent bonds, etc. Under the influence of heat and force, the contact surface between the intermediate layer 014 below the first electrode 011 and the first electrical connection layer 006 (e.g., ...) Figure 1 As shown at point A, Au can fuse with metals such as aluminum, chromium, and silver, which can easily lead to high chip voltage and even the risk of wire bonding or electrode breakage at the N electrode, resulting in loss of appearance and electrical yield.

[0028] To address the above deficiencies, the present invention provides a light-emitting diode that solves the technical problems in the prior art. The technical solution of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention through various specific implementation methods.

[0029] Figure 2 A schematic cross-sectional view of the light-emitting diode of this embodiment is shown. The light-emitting diode includes a substrate 008 and a multilayer structure on the substrate 008. The multilayer structure includes at least a first electrical connection layer 006, an insulating layer 005, a second electrical connection layer 004, and a semiconductor light-emitting sequence, starting from the substrate 008 side. The light-emitting diode also includes a first electrode 011 and a second electrode 012 for external wire bonding. The semiconductor light-emitting sequence is located on the same side of the substrate as the first electrode 011 and the second electrode 012.

[0030] Substrate 008 is used to carry semiconductor light-emitting sequences and is generally an insulating substrate, such as aluminum nitride or aluminum oxide.

[0031] The semiconductor light-emitting sequence, starting from the side furthest from the substrate 008, sequentially includes a first semiconductor layer 001, an active layer 002, and a second semiconductor layer 003. The first semiconductor layer 001 and the second semiconductor layer 003 are either N-type or P-type, and each includes a layer that provides at least electrons or holes to the active layer. The active layer is the layer that at least provides semiconductor light-emitting radiation.

[0032] The first electrical connection layer 006 is one or more stacked conductive layers that are electrically connected to the first semiconductor layer 001. The first electrical connection layer 006 may be formed by stacking or combining any of the following materials: metal or metal alloy conductive materials.

[0033] Insulating layer 005 is formed by making an insulating medium, and is at least one layer of dielectric material. Commonly, it is formed by making inorganic nitride, oxide or fluoride materials, and is used for insulation between the first electrical connection layer 006 and the second electrical connection layer 004.

[0034] The second electrical connection layer 004 is one or more conductive layers located on one side of the second semiconductor layer 003, electrically connected to the second semiconductor layer 003, and extending horizontally below the second electrode 012 to contact the second electrode 012, for electrical connection between the second semiconductor layer 003 and the second electrode 012. The second electrical connection layer 004 may be formed by stacking at least a metal or metal alloy of any choice or combination. A reflective layer may be further included between the second electrical connection layer 004 and the second semiconductor layer 003. The reflective layer is capable of reflecting light radiation from the light-emitting layer and has a reflectivity of at least 50%, more preferably more than 80%. The reflective layer is made of a high-reflectivity material, such as a reflective metal or a combination of a reflective metal and a transparent inorganic compound layer. A transparent conductive layer, such as ITO, may be further included between the reflective layer and the second semiconductor layer 003 to solve the ohmic contact problem between the second electrical connection layer 004 and the second semiconductor layer 003.

[0035] At least one first via 009 opens from one side of the second semiconductor layer 003 and extends through the second semiconductor layer 003, the active layer 002, and to the first semiconductor layer 001. An insulating layer 005 extends from the opening of the first via 009 on one side of the second electrical connection layer 004 to cover the sidewall inside the first via 009 and exposes the bottom of the first via 009.

[0036] The light-emitting diode also includes an intermediate layer 014 between the substrate and the first electrode 011. The intermediate layer 014 is in contact with the first electrode 011, and the material of the intermediate layer 014 can be the same as the material of the second electrical connection layer 004.

[0037] At least one second through hole 010 opens from one side of the insulating layer 005 and extends through the insulating layer 005 to the intermediate layer 014, the second through hole 010 exposing a portion of the surface of the intermediate layer 014.

[0038] The first electrical connection layer 006 covers one side of the insulating layer 005 and fills the first through hole 009 until the bottom of the first through hole 009 is in electrical contact with the first semiconductor layer 001. The first electrical connection layer 006 does not fill the second through hole 010, leaving the opening of the second through hole 010 exposed.

[0039] The light-emitting diode also includes a protective metal layer 013, which covers one side of the first electrical connection layer 006 and passes through the first electrical connection layer 006, filling the second through-hole 010 until the bottom of the second through-hole 010 contacts the intermediate layer 014, thereby achieving electrical connection between the first electrode 011 and the first semiconductor layer 001.

[0040] A bonding layer 007 is also included between the protective metal layer 013 and the substrate. The bonding layer 007 is used to protect the connection between the metal layer 013 and the substrate 008. The bonding layer 007 can be one or more stacked metal materials, including at least one of the metal materials such as Ti, Ni, Sn, and Au. Example 1

[0041] The structure of the light-emitting diode in this embodiment will be described below with reference to the manufacturing method. Figures 3-11 The diagram shows the structural schematic obtained in each step of a method for manufacturing a light-emitting diode according to this embodiment.

[0042] First, a semiconductor epitaxial layer is provided, such as Figure 3 As shown, the semiconductor epitaxial layer includes a growth substrate 101 and a semiconductor light-emitting sequence. The growth substrate can be an epitaxial growth substrate such as sapphire, silicon, or gallium phosphide, gallium arsenide, indium phosphide, etc., which can be used to grow the semiconductor light-emitting sequence. In this embodiment, sapphire is preferred.

[0043] The semiconductor light-emitting sequence, starting from the side away from the growth substrate 101, sequentially includes a first semiconductor layer 102, an active layer 103, and a second semiconductor layer 104. The first semiconductor layer 102 and the second semiconductor layer 104 are either N-type or P-type, and each includes a layer that provides at least electrons or holes to the active layer. The active layer 103 is a layer that provides at least semiconductor light-emitting radiation and can be a single quantum well layer or a multi-quantum well layer. Preferably, in this embodiment, the first semiconductor layer 102 is n-type doped, such as an n-type dopant of Si, Ge, or Sn, and the second semiconductor layer 104 is p-type doped, such as a p-type dopant of Mg, Zn, Ca, Sr, or Ba.

[0044] Next, a first via 1021 is opened on one side of the semiconductor light-emitting sequence, such as... Figure 4As shown, the opening of the first via 1021 is located on the side of the second semiconductor layer 104, and the first via 1021 extends through the second semiconductor layer 104 and the active layer 103 into a portion of the first semiconductor layer 102. There can be one or more first vias 1021, which can be set as needed according to the size of the semiconductor sequence. The diameter of the first via 1021 is 1~100μm, and the shortest distance between adjacent first vias 1021 is 5~500μm, which can ensure that the light-emitting diode has good current diffusion.

[0045] Before fabricating the second electrical connection layer, a transparent conductive layer 105 can be fabricated. The transparent conductive layer 105 covers the second semiconductor layer 104 and is in contact with the second semiconductor layer 104. It is used to enhance the current spread of the subsequently fabricated second electrical connection layer. The transparent conductive layer 105 can be a conductive metal oxide, such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZNO), etc.

[0046] Furthermore, a metal reflective layer 107 can be fabricated to reflect light emitted by the semiconductor light-emitting sequence, such as... Figure 5 As shown, the metal reflective layer 107 is fabricated and covers the surface of the transparent conductive layer 105. It can be made of a single layer or multiple layers of metal, including at least one high reflective metal such as aluminum, gold, silver, or chromium, with a reflectivity greater than 80%. The thickness of the metal reflective layer 107 can be 50~500 nm. This ensures that the metal reflective layer 107 has sufficient reflective ability to reflect the light radiated by the semiconductor light emission sequence without increasing the cost too much.

[0047] Preferred, such as Figure 5 As shown, a second insulating layer 106 may be additionally disposed on one side of the second semiconductor layer 104. The second insulating layer 106 at least covers one side of the second semiconductor layer 104, the sidewall of the first via 1021, and the bottom. The second insulating layer 106 can be fabricated after the transparent conductive layer 105 is fabricated and before the metal reflective layer 107 is fabricated. The second insulating layer 106 can be a nitride or oxide, such as silicon oxide or silicon nitride. The second insulating layer 106 needs to form one or more openings to expose the transparent conductive layer 105. The metal reflective layer 107 fills the openings of the second insulating layer 106 and contacts the transparent conductive layer 105.

[0048] Further, a second electrical connection layer 108 is fabricated, such as... Figure 6As shown, the second electrical connection layer 108 covers the surface of the metal reflective layer 107 and the insulating layer 106 on one side, but does not cover the insulating layer on the surface of the first via 1021. The second electrical connection layer 108 can be a single layer or a multi-layer metal stack, including at least Au, and may also include metals such as Pt, Cr, Ti or their alloys. The overall thickness can be 100~1000 nm. In addition to being used for the electrical connection between the second electrode and the second semiconductor layer 104, the second electrical connection layer 108 can also be used to prevent the aluminum, silver or other reflective metals of the reflective metal layer 107 from diffusing to other layers fabricated in the subsequent process. An intermediate layer 118 can be fabricated at the same time as the second electrical connection layer 108. The intermediate layer 118 is located on one side of the insulating layer 106 and close to the edge region of the insulating layer 106. It is separated from the second electrical connection layer 108 in the horizontal direction. The intermediate layer 118 is made of the same material as the second electrical connection layer 108.

[0049] like Figure 7 As shown, a first insulating layer 109 is fabricated to cover the bottom of the first through hole 1021, the sidewall of the first through hole 1021, and the side of the second electrical connection layer 108, and to fill the separation area between the second electrical connection layer 108 and the intermediate layer 118. The material of the first insulating layer 109 can be the same as or different from the material of the second insulating layer 106. Specifically, it can be an oxide or nitride, such as silicon oxide, silicon nitride, or zinc oxide, etc., which are electrically insulating materials.

[0050] After fabricating the first insulating layer 109, at least a portion of the bottom first insulating layer 109 and the second insulating layer 106 of the first via 1021 are removed by an etching process to expose the second semiconductor layer 104. The etching process can be ICP etching. Simultaneously, an opening is etched on one side of the portion of the first insulating layer 109 corresponding to the location where the first electrode 114 is subsequently fabricated to form a through-hole 1091. The second via 1091 is located on the portion of the first insulating layer 109 above the intermediate layer 118, and the second via 1091 is columnar or conical.

[0051] Furthermore, a first electrical connection layer 110 is fabricated. The first electrical connection layer 110 covers the surface of the first insulating layer 109 and fills the opening of the first through-hole 1021 to the bottom of the first through-hole 1021 to achieve electrical connection of the subsequent first electrode 114. The first electrical connection layer 110 does not fill the second through-hole 1091, leaving an opening at the corresponding position of the second through-hole 1091. Figure 7-8 As shown, Figure 7 This is a top view of one side of the first electrical connection layer 110. The first electrical connection layer 110 can be a single layer or multiple layers of metal with good conductivity and high reflectivity, having a reflectivity of at least 50%, and more preferably more than 80%, such as at least one of Al, Ni, Cr, Ag or their alloys. In this embodiment, an Al / Cr stack is preferred.

[0052] Further, a protective metal layer 111 is fabricated, such as... Figure 9 As shown, the protective metal layer 111 covers the surface of the first electrical connection layer 110 and fills from the opening of the second via 1091 to the bottom of the second via, contacting the intermediate layer 118. This isolates the intermediate layer 118 from the first electrical connection layer 110, preventing them from contacting each other. This prevents the metal material of the intermediate layer 118, such as Au, from fusing with the reflective metals of the first electrical connection layer 110, such as Al and Cr, due to high temperature and pressure during subsequent bonding processes. This would result in high voltage in the final chip and even the risk of the first electrode 114 falling off during wire bonding, leading to a loss in appearance and electrical yield. The protective metal layer 111 can be a single layer or multiple layers of stable conductive metals, such as Ti, W, or alloys of at least one of them. In this embodiment, a Ti and TiW double-layer stacked structure is preferred, wherein the Ti layer is the first layer, which facilitates the bonding of the second TiW layer to the intermediate layer 118. Due to its good stability, the second TiW layer can not only prevent the metal of the intermediate layer 118 from contacting and fusing with the metal of the first electrical connection layer 110, but also prevent the metal of the first electrical connection layer 110 from diffusing into the subsequently fabricated bonding layer. Preferably, the thickness of the protective metal layer 111 between the first electrical connection layer 110 and the subsequently fabricated bonding layer is between 50-300 nm. In this way, the protective metal layer 111 can prevent the metal diffusion of the first electrical connection layer 110 without increasing the cost too much.

[0053] Further, a bonding layer 112 is fabricated by simultaneously depositing bonding metals on the surface of the protective metal layer 111 and the surface of the insulating substrate 113. The bonding metals on the surface of the protective metal layer 111 and the bonding metals on the surface of the insulating substrate 113 are then bonded together using a high-temperature bonding process to form the metal bonding layer 112. Figure 10 As shown, the insulating substrate covering the surface of the metal bonding layer 112 provides support for the light-emitting diode. The metal of the metal bonding layer 112 can be one or a combination of conventional bonding materials such as gold-tin, nickel-tin, or titanium-nickel-tin.

[0054] Next, the growth substrate 101 is removed, as follows: Figure 10 As shown, the growth substrate 101 can be removed by grinding thinning, laser lift-off, wet etching or dry etching processes, or combinations thereof, depending on the material. For example, sapphire substrates are preferably removed by grinding thinning and laser lift-off processes.

[0055] Further, the semiconductor light-emitting sequence is etched starting from the first semiconductor layer 102 until a portion of the second electrical connection layer 108 and the intermediate layer 118 are exposed, as shown below. Figure 11As shown, the exposed surface of the second electrical connection layer 108 is used to fabricate the second electrode 115, and the exposed surface of the intermediate layer 118 is used to fabricate the first electrode 114. Preferably, the contact area between the intermediate layer 118 and the first electrode 114 is larger than the contact area between the intermediate layer 118 and the protective metal layer 111. The surface of the first semiconductor layer 102 of the semiconductor light-emitting sequence can be roughened to form a light-emitting surface and improve light extraction efficiency. At least the top or sidewall of the light-emitting surface can be formed with a light-transmitting protective layer, which can be a material such as silicon oxide or silicon nitride, to form moisture or electrical insulation protection.

[0056] The first electrode 114 and the second electrode 115 are fabricated. The first electrode 114 and the second electrode 115 can be a single electrode or at least two electrodes. The first electrode 114 and the second electrode 115 are respectively fabricated on the surface of the second electrical connection layer 108 and the intermediate layer 118, and can be fabricated at the same height to facilitate the subsequent wire bonding process.

[0057] Finally, a single light-emitting diode with completely separated sidewalls and bottom is formed from the semiconductor light-emitting sequence side to the insulating substrate 113 through a separation process, such as... Figure 11 As shown, Figure 12 This is a top view schematic diagram of the separated light-emitting diodes. The separation process includes etching processes for the semiconductor light-emitting sequence, the first electrical connection layer, the insulating layer, and the second electrical connection layer, as well as a substrate cutting process. Preferably, the projection of the second via 1091 on the substrate 113 at least partially coincides with the projection of the intermediate layer 118 on the substrate 113, but does not coincide with the projection of the second electrical connection layer 108 on the substrate 113. This ensures that the protective metal layer 111 provides sufficient conductivity without contacting the second electrical connection layer 108 and causing a short circuit. Example 2

[0058] As an alternative to Embodiment 1, in this embodiment, the second through-hole 1091 is designed as a closed-loop structure, with an independent insulating layer 1092 surrounding the middle of the second through-hole 1091. This independent insulating layer 1092 is also covered by the first electrical connection layer 110, and the annular second through-hole 1091 is also filled by the protective metal layer 111. Figures 13-14 As shown, Figure 13 This is a top view of one side of the first electrical connection layer 110. Other structures are consistent with Embodiment 1. A schematic diagram of the resulting light-emitting diode is shown below. Figure 13As shown. One side of the independent insulating layer 1092 will be used to provide main or full support for the first electrode 114, meaning that the independent insulating layer 1092 will be designed to be located below the first electrode 114 in subsequent fabrication steps. Since the external force is mainly concentrated at the center of the first electrode 114 when the surface side of the first electrode 114 is subjected to wire bonding, the independent insulating layer 1092 can be used to block the main wire bonding force from the bonding electrode (such as a gold ball). The annular second through-hole 1091 will be located off-center from below the second electrode 115, surrounding the independent insulating layer 1092. The portion of the protective metal layer 111 filled within the second through-hole 1091 that bears the wire bonding force is small or does not bear the vertical wire bonding force, thus preventing the protective metal layer 111 filled within the second through-hole 1091 from collapsing and causing abnormal wire bonding.

[0059] In an optional embodiment, the surface of the independent insulating layer 1092 is not covered by the first electrical connection layer 110, but is covered by the protective metal layer 111, and the annular second through-hole 1091 is also filled by the protective metal layer 111, such as... Figure 15-16 As shown, Figure 15 This is a top view of one side of the first electrical connection layer 110. Other structures are consistent with Embodiment 1. A schematic diagram of the resulting light-emitting diode is shown below. Figure 16 As shown. Example 3

[0060] As an alternative to Embodiment 1, in this embodiment, the protective metal layer 111 only fills the second through-hole 1091 until the bottom of the second through-hole 1091 contacts the intermediate layer 118, without covering the surface of the first electrical connection layer 110. Figure 17 As shown, this design prevents the metal of the intermediate layer 118 from contacting and fusing with the metal of the first electrical connection layer 110, and also reduces the vapor deposition cost of the protective metal layer 111. Optionally, at least one second through-hole 1091 may be cylindrical, annular, or conical, etc. Other structures are consistent with Embodiment 1. Example 4

[0061] The light-emitting diode of this invention can be used in the manufacture of packages or in the widely used lighting or AR fields with high current requirements. This embodiment provides a light-emitting device including a light-emitting diode, such as... Figure 18As shown, a packaging substrate 201 is provided, on which a conductive circuit layer is provided. The insulating substrate of the light-emitting diode in Embodiments 1 to 3 is mounted to the packaging substrate by an adhesive. The conductive circuit layer consists of at least two mutually insulated portions 202 and 203 for external wire bonding of the first electrode 114 and the second electrode 115. The surfaces of the first electrode 114 and the second electrode 115 are connected to the conductive circuit layer by metal wires 204. The surface of the light-emitting diode and the surface of the packaging substrate 201 can also be covered and encapsulated with encapsulating resin or encapsulating resin doped with phosphor.

[0062] The above description is merely a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the protection scope of the present invention.

Claims

1. A light-emitting diode, comprising a substrate and a multilayer structure stacked on the substrate, the multilayer structure comprising a first electrical connection layer, an insulating layer, a second electrical connection layer, and a semiconductor light-emitting sequence. The semiconductor light-emitting sequence includes a first semiconductor layer, an active layer, and a second semiconductor layer; The first electrode is electrically connected to the first semiconductor layer through the first electrical connection layer; The second electrode is electrically connected to the second semiconductor layer through the second electrical connection layer; The intermediate layer is located between the substrate and the first electrode; The feature is that: the insulating layer has an opening that exposes part of the surface of the intermediate layer, the light-emitting diode also has a protective metal layer, the protective metal layer fills the opening and contacts the intermediate layer, and the protective metal layer includes at least one metal element that is different from the first electrical connection layer.

2. A light-emitting diode according to claim 1, characterized in that: The protective metal layer also covers the surface of the first electrical connection layer near the substrate.

3. A light-emitting diode according to claim 1, characterized in that: The protective metal layer is formed by stacking one or more metal layers.

4. A light-emitting diode according to claim 1, characterized in that: The protective metal layer includes at least one of the metal elements tungsten or titanium.

5. A light-emitting diode according to claim 1, characterized in that: The semiconductor light-emitting sequence includes at least one first via, the opening of the first via is located on one side of the second semiconductor layer and has a bottom contact with the first semiconductor layer, the first electrical connection layer fills the bottom of the first via through the opening of the first via, and the sidewall of the first via is insulated by an insulating layer.

6. A light-emitting diode according to claim 1, characterized in that: It includes at least one second through hole, the opening of the second through hole is located on one side of the first electrical connection layer and has a bottom contact with the intermediate layer, the protective metal layer is filled through the opening of the second through hole to the bottom of the second through hole and contacts the intermediate layer.

7. A light-emitting diode according to claim 6, characterized in that: The projection of the second via on the substrate at least partially coincides with the projection of the intermediate layer on the substrate, but does not coincide with the projection of the second electrical connection layer on the substrate.

8. A light-emitting diode according to claim 6, characterized in that: The second through hole is not located at the center position below the first electrode.

9. A light-emitting diode according to claim 1, characterized in that: It also includes a bonding layer located between the first electrode connection layer and the substrate, and the thickness of the protective metal layer between the first electrode connection layer and the bonding layer is between 50-300 nm.

10. A light-emitting diode according to claim 1, characterized in that: The intermediate layer is made of the same material as the second electrical connection layer.

11. A light-emitting diode according to claim 1, characterized in that: The first electrical connection layer includes at least one metal with a reflectivity greater than 80%.

12. A light-emitting device, characterized in that, The package includes a packaging substrate, the surface of which includes at least two conductive layers that are insulated from each other, the light-emitting diode of claim 1 is fixed on the surface of the packaging substrate, the first electrode and the second electrode are respectively connected by a metal wire and the two conductive layers that are insulated from each other, and the surfaces of the packaging substrate and the light-emitting diode are covered by a packaging resin.

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