Perovskite solar cells and their fabrication methods, tandem solar cells and photovoltaic modules

Abstract

This application discloses a perovskite solar cell and its preparation method, a tandem solar cell, and a photovoltaic module, relating to the field of photovoltaic technology. In the preparation method of the perovskite solar cell provided in this application, an isobutylammonium iodide solution is coated onto a framework layer and annealed. The organic cations in the isobutylammonium iodide solution can remain on the surface and grain boundaries of the framework layer, acting as surfactants and passivators, rather than undergoing premature phase transition. The isobutylammonium iodide improves the wettability of the framework layer surface to the subsequent organic ammonium salt solution, ensuring uniform spreading and penetration of the organic ammonium salt solution, creating ideal conditions for homogeneous nucleation and growth. By utilizing isobutylammonium iodide to regulate crystallization kinetics, passivate defects, and expand the nucleation window, unreacted framework layer residue can be reduced, thereby improving the performance of the perovskite layer and the perovskite solar cell.

Description

Technical Field

[0001] This application relates to the field of photovoltaic technology, and more specifically, to perovskite solar cells and their preparation methods, tandem solar cells, and photovoltaic modules. Background Technology

[0002] Solar energy is a crucial component of clean energy, and perovskite solar cells have attracted significant attention due to their high efficiency and low cost. In the fabrication process of perovskite cells, the two-step solution method for preparing the perovskite layer is widely used. This method involves first depositing a framework layer and then converting it into a perovskite layer, and is widely adopted due to its advantages in film formation control. However, existing two-step methods for preparing perovskite layers have some drawbacks: the solid framework layer is too crystalline and dense, making it difficult for the organic salt solution in the second step to fully penetrate and react. This results in unreacted framework layer material remaining in the final film. This unreacted framework layer material is a deep-level defect, acting as charge recombination centers and severely impairing the open-circuit voltage and fill factor of the device. Related technologies involve adding small amounts of additives (such as DMSO, MACl, etc.) to the framework layer material to loosen the framework structure. However, these methods are often unstable, and the additives may volatilize during subsequent annealing, introducing new pores. Therefore, the perovskite layers produced by existing processes do not perform well enough, resulting in insufficient photoelectric conversion efficiency of perovskite cells.

[0003] Therefore, this application is hereby submitted. Summary of the Invention

[0004] The purpose of this application is to provide a perovskite solar cell and its preparation method, a tandem solar cell and a photovoltaic module, which have high photoelectric conversion efficiency.

[0005] This application is implemented as follows: In a first aspect, this application provides a method for preparing a perovskite solar cell, comprising: Fabricate the first carrier transport layer on the substrate; A framework layer is prepared, an isobutylammonium iodide solution is coated onto the framework layer and subjected to a first annealing, and an organic ammonium salt solution is coated onto the framework layer and subjected to a second annealing to form a perovskite layer. Fabrication of a second carrier transport layer; Fabricate the first transparent conductive layer; A first electrode is fabricated and connected to the first transparent conductive layer.

[0006] In an optional embodiment, the solvent for the isobutylammonium iodide solution is isopropanol.

[0007] In an optional embodiment, the concentration of isobutylammonium iodide in the isobutylammonium iodide solution is 0.5 mg / mL to 2 mg / mL.

[0008] In an optional implementation, the duration of the first annealing is 2 to 5 minutes, and the annealing temperature is 60°C to 80°C.

[0009] In an optional implementation, the duration of the second annealing is 10 min to 60 min, and the annealing temperature is 120°C to 180°C.

[0010] In an optional implementation, the step of creating the skeleton layer includes: A framework layer containing lead iodide and cesium bromide is produced using a co-evaporation process.

[0011] In an optional embodiment, the solute of the organic ammonium salt solution includes at least one of formamidinium hydroiodate, methylamine bromide, and methylamine chloride, and the solvent of the organic ammonium salt solution includes ethanol.

[0012] In an optional implementation, the first carrier transport layer is a hole transport layer and the second carrier transport layer is an electron transport layer.

[0013] In an optional embodiment, the method for preparing a perovskite solar cell further includes: A modification layer is fabricated on the first carrier transport layer, and the modification layer is a single-molecule self-assembled material.

[0014] Secondly, this application provides a perovskite battery, which is prepared by the perovskite battery preparation method of any of the foregoing embodiments.

[0015] Thirdly, this application provides a tandem solar cell, including the perovskite cell of the aforementioned embodiments.

[0016] Fourthly, this application provides a photovoltaic module, including the perovskite cell of the aforementioned embodiments, or including the tandem solar cell of the aforementioned embodiments.

[0017] This application has the following beneficial effects: The method for fabricating a perovskite solar cell provided in this application includes: fabricating a first carrier transport layer on a substrate; fabricating a framework layer; coating the framework layer with an isobutylammonium iodide solution and performing a first annealing; coating the framework layer with an organic ammonium salt solution and performing a second annealing to form a perovskite layer; fabricating a second carrier transport layer; fabricating a first transparent conductive layer; and fabricating a first electrode connected to the first transparent conductive layer. By coating the framework layer with an isobutylammonium iodide solution and performing annealing, the organic cations in the isobutylammonium iodide solution can remain on the surface and grain boundaries of the framework layer, acting as surfactants and passivators, rather than undergoing premature phase transition. The isobutylammonium iodide improves the wettability of the framework layer surface to the subsequent organic ammonium salt solution (mainly providing organic cations), ensuring uniform spreading and penetration of the organic ammonium salt solution, creating ideal conditions for homogeneous nucleation and growth. By utilizing isobutylammonium iodide to regulate crystallization kinetics, passivate defects, and expand the nucleation window, unreacted framework layer residue can be reduced, thereby improving the performance of the perovskite layer and the perovskite solar cell.

[0018] The perovskite solar cell provided in this application is prepared by the above-described method; the tandem solar cell provided in this application includes the perovskite solar cell of the aforementioned embodiments; the photovoltaic module provided in this application includes the perovskite solar cell described above. The perovskite solar cell, tandem solar cell, and photovoltaic module described above all feature high photoelectric conversion efficiency. Attached Figure Description

[0019] To more clearly illustrate the technical solutions of the embodiments of this application, the accompanying drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of this application and should not be regarded as a limitation of the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0020] Figure 1 This is a schematic diagram of a perovskite solar cell in one embodiment of this application; Figure 2 This is a schematic diagram of a stacked solar cell in one embodiment of this application; Figure 3 This is a flowchart of a method for preparing a perovskite solar cell in one embodiment of this application.

[0021] Key component symbols: 100 - Perovskite cell; 110 - Back electrode; 120 - First carrier transport layer; 130 - Perovskite layer; 131 - Passivation layer; 140 - Second carrier transport layer; 150 - Buffer layer; 161 - First transparent conductive layer; 170 - First electrode; 180 - Anti-reflection layer; 200 - Bottom cell; 210 - Second transparent conductive layer; 220 - Second doped silicon layer; 230 - Second intrinsic silicon layer; 240 - Silicon substrate; 250 - First intrinsic silicon layer; 260 - First doped silicon layer; 270 - Second electrode; 300 - Intermediate layer. Detailed Implementation

[0022] In related technologies, after the framework layer is fabricated, its excessive crystallinity and density make it difficult for the organic ammonium salt solution applied in the subsequent second step to fully penetrate and react. This results in unreacted framework layer material (such as PbI2) remaining in the final perovskite film. This residual framework layer material is a deep-level defect, acting as charge recombination centers and severely impairing the open-circuit voltage and fill factor of the device. Adding additives (such as dimethyl sulfoxide, methyl ammonium chloride, etc.) to loosen the framework layer material lacks stability, as the additives may volatilize during subsequent annealing, introducing new pores.

[0023] Therefore, this application provides a method for preparing a perovskite solar cell. When preparing the perovskite layer, isobutylammonium iodide is used to modify the surface of the framework layer instead of bulk doping, in order to optimize the wettability and diffusion uniformity of the subsequent organic ammonium salt solution. This improves the problem of uneven conversion of the framework layer from the source of the reaction, enhances the uniformity of the final perovskite layer, and thus improves the photoelectric conversion performance of the device.

[0024] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions in the embodiments of this application will be clearly and completely described below. Where specific conditions are not specified in the embodiments, conventional conditions or conditions recommended by the manufacturer shall apply. Reagents or instruments whose manufacturers are not specified are all conventional products that can be purchased commercially.

[0025] The features and performance of this application will be further described in detail below with reference to the embodiments.

[0026] Figure 1 This is a schematic diagram of a perovskite solar cell 100 in one embodiment of this application. Figure 1As shown, the perovskite solar cell 100 provided in this embodiment includes a back electrode 110, a first carrier transport layer 120, a perovskite layer 130, a second carrier transport layer 140, a first transparent conductive layer 161, and a first electrode 170. The back electrode 110, the first carrier transport layer 120, the perovskite layer 130, the second carrier transport layer 140, and the first transparent conductive layer 161 are sequentially stacked, and the first electrode 170 is connected to the first transparent conductive layer 161. Figure 1 In the illustrated embodiment, the perovskite solar cell 100 is a standard perovskite solar cell 100, with the first carrier transport layer 120 being a hole transport layer connected to the back electrode 110; and the second carrier transport layer 140 being an electron transport layer connected to the first transparent conductive layer 161. In other optional embodiments, the perovskite solar cell 100 can also be an inverted perovskite solar cell 100, i.e., the first carrier transport layer 120 is an electron transport layer and the second carrier transport layer 140 is a hole transport layer.

[0027] The hole transport layer (i.e., the first carrier transport layer 120 in this embodiment) is made of NiO. x The thickness of the hole transport layer can be selected from 5nm to 10nm. Furthermore, a modification layer (not shown in the figure) can be added between the first carrier transport layer 120 and the perovskite layer 130. The modification layer is a single-molecule self-assembled material, such as one or a combination of 4PACz, MeO-2PACz, etc.

[0028] In this embodiment, the perovskite layer 130 can be made of a material with an ABX3 type perovskite crystal structure, where A is an organic cation, B is a metal cation, and X is a halide ion. The specific material of the perovskite layer 130 can be any existing known material, such as Cs. x (FA y MA 1-y ) 1-x Pb(I 1-z Br z 3. The thickness of the perovskite layer 130 can be selected from 400nm to 2000nm, for example, 560nm.

[0029] Optionally, a passivation layer 131 may be disposed between the perovskite layer 130 and the second carrier transport layer 140. Optionally, the material of the passivation layer 131 may be an organic salt passivation material. For example, the material of the passivation layer 131 may be ethylenediamine hydroiodide (EDAI), which can efficiently passivate defects and inhibit degradation through a triple mechanism of dual-amino coordination + iodide ion supplementation + in-situ low-dimensional phase encapsulation. In this embodiment, the second carrier transport layer 140 is an electron transport layer. The passivation layer 131 has good adhesion to both the perovskite layer 130 and the electron transport layer, which can improve the problem of weak adhesion and easy peeling when the electron transport layer is directly connected to the perovskite layer 130, thereby improving the reliability of the entire perovskite solar cell 100.

[0030] Optionally, the thickness of the passivation layer 131 is 0.5 nm to 5 nm.

[0031] Furthermore, the material of the second carrier transport layer 140 can be one or more of tin dioxide, titanium dioxide, zinc oxide, fullerene, graphene, graphene oxide, and molybdenum disulfide. Optionally, the thickness of the electron transport layer is 5 nm to 30 nm.

[0032] In this embodiment, a buffer layer 150 may be disposed between the second carrier transport layer 140 and the first transparent conductive layer 161. Optionally, the buffer layer 150 is made of tin oxide (SnO2), which can provide physical isolation, energy level modulation, defect passivation, or stability enhancement. Optionally, the thickness of the buffer layer 150 is 5 nm to 30 nm.

[0033] The first transparent conductive layer 161 is made of transparent conductive oxide (TCO), and the specific material can be one or a combination of ITO, IZO, and IWO. The thickness of the first transparent conductive layer 161 can be selected from 30nm to 150nm.

[0034] Furthermore, to improve light utilization efficiency, an antireflection layer 180 can be disposed above the first transparent conductive layer 161. The antireflection layer 180 can reduce light reflection, allowing more light to enter the perovskite solar cell 100 for power generation. Optionally, the thickness of the antireflection layer 180 is 80nm~150nm.

[0035] In this embodiment, the back electrode 110 and the first electrode 170 serve as two electrodes with opposite polarities for transmitting current. In this embodiment, the first electrode 170 is a gate line, and its material can be one or a combination of gold, silver, copper, and aluminum; the back electrode 110 is a metal backplate. Optionally, the thickness of the first electrode 170 is 50 nm to 400 nm.

[0036] Figure 2 This is a schematic diagram of a stacked solar cell in one embodiment of this application. Figure 2 As shown, the tandem solar cell provided in this application embodiment includes a bottom cell 200, an intermediate layer 300, and a perovskite cell 100. The perovskite cell 100 of the tandem solar cell can be the portion of the perovskite cell 100 provided in the above embodiments, excluding the back electrode 110. In this application embodiment, the bottom cell 200, the intermediate layer 300, and the perovskite cell 100 are stacked sequentially, and the light-absorbing layer of the bottom cell 200 and the perovskite cell 100 is connected to the intermediate layer 300.

[0037] In this embodiment, the bottom cell 200 is a heterojunction cell (HJT), specifically comprising a second transparent conductive layer 210, a first doped silicon layer 260, a first intrinsic silicon layer 250, a silicon substrate 240, a second intrinsic silicon layer 230, and a second doped silicon layer 220, which are sequentially stacked. The second doped silicon layer 220 is in direct contact with the intermediate layer 300. The bottom cell 200 also includes a second electrode 270, which is connected to the second transparent conductive layer 210. For ease of distinction, in this embodiment, the transparent conductive layer in the perovskite cell 100 is named the first transparent conductive layer 161.

[0038] Optionally, the silicon substrate 240 is n-type single-crystal silicon; the first doped silicon layer 260, the first intrinsic silicon layer 250, the second intrinsic silicon layer 230, and the second doped silicon layer 220 are all amorphous silicon; the first doped silicon layer 260 is p-type doped, and the second doped silicon layer 220 is n-type doped. Optionally, the second transparent conductive layer 210 is a transparent conductive oxide, and the specific material can be one or a combination of ITO, IZO, and IWO.

[0039] Optionally, the intermediate layer 300 is a transparent conductive oxide, and the specific material can be one or a combination of ITO, IZO, and IWO. Optionally, the thickness of the intermediate layer 300 is 2nm to 30nm.

[0040] In this embodiment, the perovskite solar cell 100 maintains the textured structure of a heterojunction solar cell, which has light-trapping properties, enabling it to absorb photons more fully and achieve a higher current density.

[0041] In other alternative embodiments, the base cell 200 can be of a type other than a heterojunction cell; therefore, depending on the type of base cell 200 selected, the tandem solar cell can also be a perovskite-copper indium gallium selenide tandem cell, a perovskite-organic tandem cell, or other types.

[0042] Figure 3 This is a flowchart illustrating a method for fabricating a perovskite solar cell 100 according to one embodiment of this application. Figure 3 As shown, the fabrication method of the perovskite solar cell 100 provided in this application embodiment includes the following steps: Step S100: Fabricate the first carrier transport layer 120 on the substrate.

[0043] If preparation Figure 1 In the perovskite solar cell 100 of the embodiment, the substrate is the back electrode 110; if fabricated Figure 2 In the tandem solar cell of the embodiment, the perovskite cell 100 has an intermediate layer 300 as its substrate.

[0044] Taking the first carrier transport layer 120 as a hole transport layer as an example, the hole transport layer can be prepared using existing processes, such as solution deposition or vacuum coating. Furthermore, after the first carrier transport layer 120 is fabricated, a modification layer can be fabricated on the first carrier transport layer 120 using one or a combination of materials such as 4PACz and MeO-2PACz.

[0045] Step S200: Prepare a framework layer, coat the framework layer with an isobutylammonium iodide solution and perform a first annealing, coat the framework layer with an organic ammonium salt solution and perform a second annealing to form a perovskite layer 130.

[0046] Optionally, the framework layer is prepared using a vapor deposition method. Specifically, a framework layer containing lead iodide and cesium bromide can be prepared using a co-evaporation process. It should be understood that in other embodiments, the framework layer may contain only one compound, such as lead iodide; or it may contain more compounds, such as lead iodide, cesium bromide, and rubidium bromide. In this embodiment, a framework layer containing PbI2 and CsBr is prepared using a co-evaporation method; optionally, the mass ratio of PbI2 to CsBr is 6:1.

[0047] In this embodiment, after the skeleton layer is fabricated, an isobutylammonium iodide solution is coated onto the surface of the skeleton layer and a first annealing is performed. This step is the pretreatment of the skeleton layer, modifying its surface with isobutylammonium iodide.

[0048] Optionally, the solvent for the isobutylammonium iodide solution is isopropanol. Optionally, the concentration of isobutylammonium iodide in the isobutylammonium iodide solution is 0.5 mg / mL to 2 mg / mL, for example, any one of the following values ​​or a value between any two values: 0.5 mg / mL, 0.6 mg / mL, 0.7 mg / mL, 0.8 mg / mL, 0.9 mg / mL, 1 mg / mL, 1.1 mg / mL, 1.2 mg / mL, 1.3 mg / mL, 1.4 mg / mL, 1.5 mg / mL, 1.6 mg / mL, 1.7 mg / mL, 1.8 mg / mL, 1.9 mg / mL, and 2.0 mg / mL.

[0049] Alternatively, the isobutylammonium iodide solution can be coated onto the framework layer using spin coating or plating. When using spin coating, the rotation speed can be selected from 2000 rpm to 6000 rpm, for example, 4000 rpm.

[0050] Optionally, the duration of the first annealing is 2 min to 5 min, such as any one of 2 min, 3 min, 4 min, 5 min or any value between any two points; the annealing temperature of the first annealing is 60℃ to 80℃, such as any one of 60℃, 62℃, 64℃, 66℃, 68℃, 70℃, 72℃, 74℃, 76℃, 78℃, 80℃ or any value between any two points.

[0051] By pretreating the surface of the framework layer, the subsequent organic ammonium salt solution can be evenly spread and penetrated, creating ideal conditions for homogeneous nucleation and growth. This results in better crystallinity, larger and more uniform grains, and a significantly longer fluorescence lifetime for the perovskite layer 130 (indicating a substantial reduction in internal and interface defect density).

[0052] After surface modification of the framework layer, an organoammonium salt solution is coated onto the framework layer and subjected to a second annealing, allowing the cations in the organoammonium salt solution to react with the framework layer to form perovskite. Optionally, the solute in the organoammonium salt solution includes at least one of formamidinium hydroiodate (FAI), methylamine bromide (MABr), and methylamine chloride (MACl), and the solvent for the organoammonium salt solution includes ethanol. In one specific embodiment, the solute in the organoammonium salt solution includes formamidinium hydroiodate (FAI), methylamine bromide (MABr), and methylamine chloride (MACl) in a mass ratio of 10:3:3. The concentration of the organoammonium salt in the organoammonium salt solution is 50 mg / mL to 80 mg / mL.

[0053] Optionally, the organic ammonium salt solution can be coated onto the skeleton layer by spin coating, with a spin speed of 2000 rpm to 6000 rpm, for example, 4000 rpm; and a spin coating time of 15s to 60s, for example, 25s.

[0054] Optionally, the duration of the second annealing is 10 min to 60 min, for example, any value among 10 min, 20 min, 30 min, 40 min, 50 min, and 60 min, or any value between any two points; the annealing temperature of the second annealing is 120℃ to 180℃, for example, any value among 120℃, 130℃, 140℃, 150℃, 160℃, 170℃, and 180℃, or any value between any two points. After the second annealing, a perovskite layer 130 is formed.

[0055] Step S300: Fabricate the second carrier transport layer 140.

[0056] Before fabricating the second carrier transport layer 140, a passivation layer 131 can be fabricated on the perovskite layer 130, and then the second carrier transport layer 140 can be fabricated on the passivation layer 131. In this embodiment, the second carrier transport layer 140 is an electron transport layer, and its fabrication process can refer to the prior art, which will not be described in detail here.

[0057] Step S400: Fabricate the first transparent conductive layer 161.

[0058] Before fabricating the first transparent conductive layer 161, a buffer layer 150 can be fabricated on the second carrier transport layer 140, and then the first transparent conductive layer 161 can be fabricated on the buffer layer 150. The fabrication processes of the buffer layer 150 and the first transparent conductive layer 161 can refer to existing technologies and will not be described in detail here.

[0059] Step S500: Fabricate the first electrode 170 connected to the first transparent conductive layer 161.

[0060] In preparation such as Figure 2 When creating the stacked solar cell shown, a second electrode 270 also needs to be fabricated on the second transparent conductive layer 210.

[0061] This application also provides a photovoltaic module (not shown in the figure), including the perovskite cell or tandem solar cell provided in the above embodiments.

[0062] The following comparison of tests conducted in Examples 1-3 with those in Comparative Examples 1 and 2 illustrates the effectiveness of the perovskite solar cell 100 and tandem solar cell provided in this application.

[0063] Example 1 An intermediate layer 300 is fabricated on the bottom cell 200 (heterojunction cell), which is an HJT crystalline silicon cell. The intermediate layer 300 is made of ITO and has a thickness of 10 nm. A hole transport layer and a modification layer are fabricated on the intermediate layer 300. The hole transport layer is made of NiO. xThe modification layer was a single-molecule self-assembled material 4PACz, and the hole transport layer was 5 nm thick. A framework layer containing PbI₂ and CsBr (mass ratio 6:1) was prepared on the hole transport layer via co-evaporation. Isobutylammonium iodide was dissolved in isopropanol to obtain a 1 mg / mL isobutylammonium iodide solution. This solution was spin-coated onto the framework layer at 4000 rpm and then annealed at 70 °C for 3 min. 40 mg of formamidinium hydroiodate (FAI), 12 mg of methylamine bromide (MABr), and 12 mg of methylamine chloride (MACl) were dissolved in 1 mL of anhydrous ethanol to obtain an organic ammonium salt solution. 100 μL of this organic ammonium salt solution was dropwise added to the framework layer and dynamically spin-coated at 4000 rpm for 25 s. It was then annealed on a hot plate at 150 °C for 25 min to form a perovskite layer 130. Then, a passivation layer 131, an electron transport layer, a buffer layer 150, a first transparent conductive layer 161, an antireflection layer 180, and a first electrode 170 are fabricated to obtain a tandem solar cell.

[0064] Example 2 The only difference between this embodiment and Example 1 is that the concentration of isobutylammonium iodide in the isobutylammonium iodide solution is 0.5 mg / mL.

[0065] Example 3 The only difference between this embodiment and Example 1 is that the concentration of isobutylammonium iodide in the isobutylammonium iodide solution is 2 mg / mL.

[0066] Comparative Example 1 Compared with Example 1, the only difference is that the step of "dissolving isobutylammonium iodide in isopropanol to obtain an isobutylammonium iodide solution with a concentration of 1 mg / mL, spin-coating it onto the skeleton layer at a speed of 4000 rpm, and then annealing it on a heating stage at 70°C for 3 min" is omitted.

[0067] Comparative Example 2 The method is the same as that used in Comparative Example 1.

[0068] The performance tests of the tandem solar cells in Examples 1-3 and Comparative Examples 1-2 are as follows.

[0069]

[0070] As can be seen from the table above, regardless of the open-circuit voltage (V) OC ), short-circuit current (J) SCIn terms of fill factor (FF) and power conversion efficiency (PCE), Examples 1-3 of this application are superior to Comparative Examples 1 and 2. It can be inferred that isobutylammonium iodide improves the wettability of the framework layer surface to the subsequent organic ammonium salt solution (mainly providing organic cations), ensuring uniform spreading and penetration of the organic ammonium salt solution, thus creating ideal conditions for homogeneous nucleation and growth. By using isobutylammonium iodide to regulate crystallization kinetics, passivate defects, and expand the nucleation window, unreacted framework layer residue can be reduced, thereby improving the performance of the perovskite layer 130 and the perovskite solar cell 100.

[0071] The above are merely preferred embodiments of this application and are not intended to limit this application. Various modifications and variations can be made to this application by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the protection scope of this application.

Claims

1. A method for preparing a perovskite solar cell, characterized in that, include: Fabricate the first carrier transport layer on the substrate; A framework layer is prepared, an isobutylammonium iodide solution is coated onto the framework layer and subjected to a first annealing, and an organic ammonium salt solution is coated onto the framework layer and subjected to a second annealing to form a perovskite layer. Fabrication of a second carrier transport layer; Fabricate the first transparent conductive layer; A first electrode is fabricated and connected to the first transparent conductive layer.

2. The method for preparing a perovskite solar cell according to claim 1, characterized in that, The solvent for the isobutylammonium iodide solution is isopropanol.

3. The method for preparing a perovskite solar cell according to claim 1, characterized in that, The concentration of isobutylammonium iodide in the isobutylammonium iodide solution is 0.5 mg / mL to 2 mg / mL.

4. The method for preparing a perovskite solar cell according to claim 1, characterized in that, The duration of the first annealing is 2 to 5 minutes, and the annealing temperature is 60°C to 80°C. And / or, the duration of the second annealing is 10 min to 60 min, and the annealing temperature is 120℃ to 180℃.

5. The method for preparing a perovskite solar cell according to claim 1, characterized in that, The steps for creating the skeleton layer include: The framework layer containing lead iodide and cesium bromide is produced by a co-evaporation process.

6. The method for preparing a perovskite solar cell according to claim 1, characterized in that, The solute in the organic ammonium salt solution includes at least one of formamidinium hydroiodate, methylamine bromide, and methylamine chloride, and the solvent in the organic ammonium salt solution includes ethanol.

7. The method for preparing a perovskite solar cell according to claim 1, characterized in that, The first carrier transport layer is a hole transport layer, and the second carrier transport layer is an electron transport layer.

8. A perovskite battery, characterized in that, The perovskite solar cell is prepared by the method described in any one of claims 1-7.

9. A stacked solar cell, characterized in that, Including the perovskite solar cell as described in claim 8.

10. A photovoltaic module, characterized in that, Includes the perovskite solar cell of claim 8, or includes the tandem solar cell of claim 9.

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