An interface regulation method for perovskite / silicon tandem solar cell

Abstract

This invention discloses an interface control method for perovskite / silicon tandem solar cells. The invention involves introducing small organic molecules with rigid aromatic linking groups and extended π-conjugated charge transport head groups onto the surface of a transparent conductive oxide electrode. A mixed solvent system containing organic solvents with different boiling points is used to control the self-assembly process, inducing the small organic molecules to form a uniformly covered and oriented self-assembled monolayer on the electrode surface. The formed self-assembled monolayer can synergistically control the nucleation and crystallization behavior of the perovskite light-absorbing layer and alleviate the interfacial stress caused by the difference in thermal expansion coefficients between the perovskite light-absorbing layer and the silicon substrate, thereby improving the interfacial electrical properties and enhancing the operational stability of the perovskite / silicon tandem solar cell. The fabricated tandem solar cell, from bottom to top, comprises a silicon substrate cell, a transparent conductive oxide electrode, a self-assembled monolayer, a perovskite light-absorbing layer, and an upper functional layer.

Description

Technical Field

[0001] This invention relates to the field of photovoltaic technology, specifically to an interface control method for perovskite / silicon tandem solar cells and a perovskite / silicon tandem solar cell prepared therefrom. Background Technology

[0002] Perovskite / silicon tandem solar cells, by integrating the perovskite top cell with the silicon bottom cell, effectively expand the range of solar spectrum utilization and are considered one of the key technological paths to break through the efficiency limit of single-junction solar cells.

[0003] However, in actual device fabrication, the perovskite light-absorbing layer and the silicon substrate are typically electrically connected via a transparent conductive oxide electrode. This interface presents significant structural, chemical, and thermodynamic mismatches. Firstly, the large difference in thermal expansion coefficients between perovskite and silicon leads to the accumulation of thermal stress at the interface during device fabrication and operation, inducing interface defects and enhanced carrier recombination, resulting in decreased long-term stability. Secondly, the transparent conductive oxide electrode surface typically has a rough or textured structure, making it difficult to form a uniform, dense, and oriented control layer using traditional interface modification methods.

[0004] In existing technologies, studies have explored the modulation of interfacial energy levels by introducing self-assembled monolayers. However, these methods largely focus on modifying the interface by altering the head group or simply introducing flexible linker groups. These approaches neglect the assembly kinetics of the self-assembled monolayers during preparation, easily leading to disordered molecular orientation, uneven coverage, and limited stability under thermal cycling conditions. Consequently, they fail to simultaneously address the needs for interfacial stress modulation and improved electrical performance.

[0005] Therefore, how to construct a structurally stable, orientationally ordered interface layer in perovskite / silicon tandem solar cells that can simultaneously achieve interface energy level regulation and thermal stress mitigation remains a pressing technical problem to be solved in this field. Summary of the Invention

[0006] In view of the above-mentioned shortcomings in the prior art, the purpose of this invention is to provide an interface control method for perovskite / silicon tandem solar cells.

[0007] This invention achieves comprehensive control over the crystallization behavior, orderliness, and interfacial stress state of the perovskite / silicon interface by synergistically designing the molecular structural characteristics and assembly process of self-assembled monolayers.

[0008] Another objective of this invention is to provide a perovskite / silicon tandem solar cell that, while maintaining excellent carrier transport performance, can effectively reduce interface defect density and improve the stability of the device under thermal cycling and long-term operating conditions.

[0009] To achieve the above objectives, the present invention adopts the following technical solution.

[0010] This invention provides an interface control method for perovskite / silicon tandem solar cells, comprising introducing a self-assembled monolayer on the surface of a transparent conductive oxide electrode of a silicon substrate cell. The self-assembled monolayer is composed of small organic molecules, which include at least an anchoring group capable of chemically anchoring to the transparent conductive oxide electrode, a rigid linking group having an aromatic structure, and a charge transport head group having an extended π-conjugated structure.

[0011] In the process of introducing a self-assembled monolayer, the organic small molecules are dissolved in a mixed solvent system containing at least two organic solvents with different boiling points, and the solution is coated on the surface of a transparent conductive oxide electrode to form a wet film. Through a subsequent heat treatment process, the organic small molecules are induced to undergo ordered self-assembly by utilizing the difference in evaporation rates of different solvents, thereby forming a self-assembled monolayer with stable orientation and uniform coverage on the surface of the transparent conductive oxide electrode.

[0012] The self-assembled monolayer formed in the above manner is configured to synergistically regulate the nucleation and crystallization behavior of the perovskite light-absorbing layer and alleviate the interfacial stress caused by the difference in thermal expansion coefficients between the perovskite light-absorbing layer and the silicon substrate, thereby improving the interfacial electrical properties and enhancing the overall performance of the device.

[0013] The anchoring groups of the organic small molecules include phosphonic acid groups, phosphate groups, carboxylic acid groups, silyl groups, or combinations thereof.

[0014] The rigid linking groups of the organic small molecules include monocyclic aromatic structures, polycyclic aromatic structures, or fused-ring aromatic structures.

[0015] The charge transport head group of the organic small molecule is an aromatic amine, carbazole, triaryl amine or its derivative having an extended π-conjugated structure.

[0016] The mixed solvent system includes a main solvent, a low-boiling-point polar solvent, and an auxiliary solvent, a high-boiling-point weakly polar solvent.

[0017] The main solvent is an alcohol solvent, and the auxiliary solvent is an aromatic solvent or a halogenated aromatic solvent, accounting for 10%-40%.

[0018] The heat treatment temperature is 65–135 °C.

[0019] The transparent conductive oxide electrode is indium tin oxide, indium zinc oxide, doped tin oxide, or a combination thereof.

[0020] The present invention also provides a perovskite / silicon tandem solar cell, comprising a silicon substrate cell, a transparent conductive oxide electrode disposed on the silicon substrate cell, a self-assembled monolayer disposed on the transparent conductive oxide electrode, a perovskite light-absorbing layer disposed on the self-assembled monolayer, and a carrier transport layer and an electrode layer disposed sequentially on the perovskite light-absorbing layer.

[0021] The silicon substrate cell is a textured silicon heterojunction cell or a tunnel oxide passivated contact silicon cell. The perovskite light-absorbing layer is a wide-bandgap perovskite material.

[0022] Compared with the prior art, the present invention has at least the following beneficial effects:

[0023] (1) By introducing a self-assembled monolayer with a rigid aromatic structure, the present invention improves the orientation stability and coverage uniformity of molecules on the surface of transparent conductive oxides, and is suitable for planar and textured electrode surfaces.

[0024] (2) By using mixed solvent systems with different boiling points and combining them with heat treatment, the assembly dynamics of self-assembled single molecules can be effectively controlled, avoiding disordered molecular stacking and improving the structural consistency of the interface layer.

[0025] (3) The self-assembled monolayer formed can alleviate the interfacial stress caused by thermal expansion mismatch between the perovskite light-absorbing layer and the silicon substrate while regulating the interfacial energy level arrangement, thereby reducing the interfacial defect density and carrier recombination.

[0026] (4) Based on the above interface regulation effect, the perovskite / silicon tandem solar cell of the present invention has been significantly improved in terms of electrical performance and long-term operation stability, and has good industrial application prospects. Attached Figure Description

[0027] Figure 1 For specific experimental methods;

[0028] Figure 2 The photoluminescence curves of the two perovskite thin films are the test data of Example 1 and Comparative Example 1.

[0029] Figure 3 This is the chemical structure diagram of 4-(7H-dibenzo[c]carbazole-7-yl)phenylphosphonic acid (PhPADCB) in a specific self-assembled single molecule;

[0030] Figure 4 Images showing the surface luminescence intensity uniformity of Example 1 and Comparative Example 1;

[0031] Figure 5 These are scanning tunneling electron microscope images of the lower surface of Example 1 and Comparative Example 1;

[0032] Figure 6 The above is a statistical chart of device data for Example 2 and Comparative Example 2. Detailed Implementation

[0033] The technical solution of the present invention will be clearly and completely described below with reference to the embodiments. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0034] The silicon-based solar cells used in the embodiments of this invention were all supplied by Anhui Xuancheng Photovoltaic, and the NiO used was... X FAI, MAI, PbBr2, and PbI2 were all purchased from Liaoning Youxuan Technology Co., Ltd. Ethanol, IPA, DMF, DMSO, and CsI were purchased from Sigma-Aldrich. EDADI and C... 60 BCP, 4PADCB, and PhPADCB were purchased from Polymer Light Technology Inc. Tetra(dimethylamino)tin(IV) for tin dioxide (SnO2) atomic layer deposition (ALD) was purchased from Nanjing Aimouyuan Scientific Instruments Co., Ltd.

[0035] This invention involves sputtering ITO onto a silicon-based solar cell and then dissolving self-assembled monomolecules (such as 4-(7H-dibenzo[c]carbazole-7-yl)phenylphosphonic acid, 4-(9H-carbazole-9-yl)phenylphosphonic acid, p-(diphenylamino)phenylphosphonic acid, pyrene-diphenylaminophosphonic acid, etc.) with strong anchoring groups, rigid π-conjugated linkages, and hole-transporting capabilities of aromatic amine head groups using a mixed solvent (the main solvent is a low-boiling-point polar alcohol solvent such as ethanol or isopropanol, and the auxiliary solvent is a high-boiling-point aromatic solvent such as chlorobenzene, chloroform, toluene, or xylene, etc., with a volume ratio of 10%-40%). After spin-coating to form a dense and uniform SAM (self-assembled monolayer) layer, a perovskite layer, a post-treatment layer, an electron transport layer, a modification layer, a composite layer, a metal electrode, and an antireflection layer are sequentially deposited to obtain a perovskite / silicon stacked device.

[0036] Example 1

[0037] In this Example 1, the rigid SAM was deposited on the anodic ITO conductive glass, and then a perovskite layer was deposited.

[0038] The conductive glass is 1.1 mm thick, the ITO is 100 nm thick, the dimensions are 20 mm × 20 mm, and the resistance is 15 Ω / m. 2 The hole transport layer uses a 0.3 mg / ml PhPADCB organic solution (chemical formula: ...). Figure 2As shown, the solvent is ethanol:chlorobenzene = 3:1;

[0039] The specific preparation steps of the SAM layer in Example 1 are as follows:

[0040] (1) First, use deionized water, acetone, isopropanol and ethanol to ultrasonically clean the ITO conductive glass for 20 minutes each. After drying it with a nitrogen gun, treat it with ultraviolet-ozone for 15 minutes and quickly transfer it to a glove box filled with nitrogen.

[0041] (2) The mixed organic solution of PhPADCB was spin-coated onto ITO glass at a rotation speed of 4000 rpm / min for 30 s, an annealing temperature of 135℃ for 10 min.

[0042] (3) After purging and resetting the glove box atmosphere with nitrogen, a pre-prepared perovskite solution containing FAI (199.73 mg), CsI (20.8 mg), PbI2 (497.62 mg), PbBr2 (208.66 mg), MAI (55.62 mg), RbCl (5.81 mg), and GASCN (5.24 mg) dissolved in 800 ml DMF and 200 ml DMSO and thoroughly stirred was spin-coated onto the SAM layer. The spin-coating method involved pipetting 25 μL of the solution and dropping it into the center of the plate. The spin-coating conditions were: low speed 1000 rpm / min for 10 s, high speed 6000 rpm / min for 50 s, and then, at the 30th second of high-speed rotation, another pipette was used to pipette 500 μL of diethyl ether as an antisolvent and dropped it into the center of the high-speed rotating glass slide. Annealing was performed in a gradient manner: low temperature annealing at 65℃ for 2 min, and high temperature annealing at 105℃ for 6 min, as shown below. Figure 1 As shown.

[0043] PhPADCB has a strong anchoring phosphate group, which enables it to form a good bond with ITO. At the same time, its benzene ring linking group provides greater steric hindrance and appropriately reduces the dipole moment of the SAM molecule, ensuring that the SAM molecule can bind to ITO more perpendicularly and reducing the stacking of the two molecules. The aromatic amine head group at the top ensures good hole transport capability.

[0044] Traditional ethanol solvents can dissolve polar head groups, but they have poor solubility for aromatic skeletons and are prone to agglomeration. This leads to the formation of SAM stacks on ITO during annealing, affecting transport. However, the introduction of chlorobenzene in the mixed solvent (75% ethanol + 25% chlorobenzene) can weaken the polar interaction between SAMs, prevent cluster formation, and slow down solvent evaporation. This allows SAM molecules to contact active sites more uniformly, thereby forming a dense and ordered SAM layer and improving transport performance.

[0045] Comparative Example 1

[0046] Comparative Example 1 is identical to the Example except for the preparation process of the SAM layer.

[0047] The specific method for preparing the SAM layer in Comparative Example 1 is as follows:

[0048] (1) Prepare an organic solution of 4-(7H-dibenzo[c]carbazole-7-yl)butylphosphonic acid (4PADCB) at a concentration of 0.3 mg / ml using ethanol as the solvent, and stir overnight at room temperature under a nitrogen atmosphere.

[0049] (2) First, use deionized water, acetone, isopropanol and ethanol to ultrasonically clean the ITO conductive glass for 20 minutes each. After drying it with a nitrogen gun, treat it with ultraviolet-ozone for 15 minutes and quickly transfer it to a glove box filled with nitrogen.

[0050] (3) Spin-coat the mixed organic solution of 4PADCB onto ITO glass at a rotation speed of 4000 rpm / min, a spin coating time of 30 s, an annealing temperature of 135℃, and an annealing time of 10 min.

[0051] (4) After purging and resetting the glove box atmosphere with nitrogen, a pre-prepared perovskite solution containing FAI (199.73 mg), CsI (20.8 mg), PbI2 (497.62 mg), PbBr2 (208.66 mg), MAI (55.62 mg), RbCl (5.81 mg), and GASCN (5.24 mg) dissolved in 800 ml DMF and 200 ml DMSO and thoroughly stirred was spin-coated onto the SAM layer. The spin-coating method involved using a pipette to drop 25 μL of the solution into the center of the plate. The spin-coating conditions were: low speed 1000 rpm / min for 10 s, high speed 6000 rpm / min for 50 s, and then, at the 30th second of high-speed rotation, another pipette was used to drop 500 μL of diethyl ether as an antisolvent into the center of the high-speed rotating glass slide. Annealing was performed in a gradient manner: low temperature annealing at 65℃ for 2 min, and high temperature annealing at 105℃ for 6 min.

[0052] See Figure 2 To compare the back (glass surface) light-gathering photoluminescence performance of Example 1 and Comparative Example 1, photoluminescence scanning was performed on Example 1 and Comparative Example 1 at different wavelengths from 481 to 1000 nm. It can be found that the PL intensity of Example 1 is lower than that of Comparative Example 1, which means that Example 1 has better extraction, that is, better hole transport capability.

[0053] See Figure 4The images shown are frontal PL mapping images of Example 1 and Comparative Example 1. A full PL scan was performed on Example 1 and Comparative Example 1. The overall uniformity and luminescence intensity of Example 1 are higher than those of Comparative Example 1, indicating that the perovskite deposited on the surface has better uniformity and better crystal quality.

[0054] See Figure 5 The images shown are back-side SEM images and grain statistics of Example 1 and Comparative Example 1. The grain size and grain boundary smoothness of Example 1 are significantly better than those of Comparative Example 1, indicating that SEM plays an important role in regulating the growth of perovskite.

[0055] Example 2

[0056] The specific fabrication steps of the perovskite / silicon solar cell in Example 2 are as follows:

[0057] (1) The silicon wafer was ultrasonically cleaned in anhydrous ethanol for 5 min, and then ITO of 120 nm and 20 nm was deposited on the p-side and n-side respectively by vacuum room temperature radio frequency magnetron sputtering, with a deposition vacuum degree of 5 × 10⁻⁶. -4 Pa, the magnetron sputtering power is 180W, and the magnetron sputtering time is 6min;

[0058] (2) Transfer the silicon wafer to a vacuum evaporation glove box and wait for the vacuum level to drop to 5×10. -4 After Pa, Ag with a thickness of 500nm-800nm ​​was deposited at a rate of 1-2Å / s;

[0059] (3) Treat the silicon wafer with ultraviolet-ozone for 15 minutes and then quickly transfer it to a glove box filled with nitrogen.

[0060] (4) Spin-coat the mixed organic solution of PhPADCB onto the silicon wafer at a rotation speed of 3000 rpm / min, a spin coating time of 30 s, an annealing temperature of 135 ℃, and an annealing time of 10 min.

[0061] (5) After purging and resetting the glove box atmosphere with nitrogen, a pre-prepared perovskite solution containing 199.73 mg FAI, 20.8 mg CsI, 497.62 mg PbI2, 208.66 mg PbBr2, 55.62 mg MAI, 5.81 mg RbCl, and 5.24 mg GASCN, dissolved in 800 ml DMF and 200 ml DMSO and thoroughly stirred, was spin-coated onto the SAM layer. The spin-coating method involved using a pipette to drop 25 μL of the solution into the center of the plate. The spin-coating conditions were: low speed 1000 rpm / min for 10 s, high speed 4000 rpm / min for 50 s, and then, at the 30th second of high-speed rotation, another pipette was used to drop 500 μL of diethyl ether as an antisolvent into the center of the high-speed rotating glass slide. Annealing was performed using a gradient method: low temperature annealing at 65℃ for 2 min, and high temperature annealing at 105℃ for 6 min.

[0062] (6) The isopropanol solution of EDADI was spin-coated onto the perovskite layer at a rotation speed of 3000 rpm / min for 30 s and then annealed at 105 °C for 5 min.

[0063] (7) Quickly transfer the silicon wafer with deposited perovskite into the vacuum chamber and perform vacuuming. Wait until the vacuum level drops to 4×10⁻⁶. -4 Below Pa, electron transport layer C is constructed using a rate of 0.1–0.2 Å / s. 60 Vacuum deposition with a thickness of 20 nm;

[0064] (8) Transfer the silicon wafer to the ALD device and evacuate it to below 20 Pa. Perform 120 cycles of water and tin sources to deposit SnO2 with a thickness of 20 nm.

[0065] (9) The substrate is further transferred to a metal vacuum evaporation glove box and evacuated to a vacuum level of 5×10⁻⁶. -4 Below Pa, metallic Ag was deposited at a rate of 0.5-1 Å / s to a thickness of 800-1000 nm;

[0066] (10) Transfer the device further into the organic vapor deposition chamber and evacuate to 4×10⁻⁶. -4 After Pa, MgF2 was deposited at a rate of 0.5-1 Å / s to a thickness of 150 nm.

[0067] Comparative Example 2

[0068] The perovskite / silicon solar cell in Comparative Example 2 is the same as that in Example 2, except for the SAM layer. The specific preparation steps are as follows:

[0069] (1) The silicon wafer was ultrasonically cleaned in anhydrous ethanol for 5 min, and then ITO of 120 nm and 20 nm was deposited on the p-side and n-side respectively by vacuum room temperature radio frequency magnetron sputtering, with a deposition vacuum degree of 5 × 10⁻⁶. -4 Pa, the magnetron sputtering power is 180W, and the magnetron sputtering time is 6min;

[0070] (2) Transfer the silicon wafer to a vacuum evaporation glove box and wait for the vacuum level to drop to 5×10. -4 After Pa, Ag with a thickness of 500nm-800nm ​​was deposited at a rate of 1-2Å / s;

[0071] (3) Treat the silicon wafer with ultraviolet-ozone for 15 minutes and then quickly transfer it to a glove box filled with nitrogen.

[0072] (4) Spin-coat the mixed organic solution of 4PADCB onto the silicon wafer at a rotation speed of 3000 rpm / min for 30 s, an annealing temperature of 135 ℃ and an annealing time of 10 min.

[0073] (5) After purging and resetting the glove box atmosphere with nitrogen, a pre-prepared perovskite solution containing 199.73 mg FAI, 20.8 mg CsI, 497.62 mg PbI2, 208.66 mg PbBr2, 55.62 mg MAI, 5.81 mg RbCl, and 5.24 mg GASCN, dissolved in 800 ml DMF and 200 ml DMSO and thoroughly stirred, was spin-coated onto the SAM layer. The spin-coating method involved using a pipette to drop 25 μL of the solution into the center of the plate. The spin-coating conditions were: low speed 1000 rpm / min for 10 s, high speed 4000 rpm / min for 50 s, and then, at the 30th second of high-speed rotation, another pipette was used to drop 500 μL of diethyl ether as an antisolvent into the center of the high-speed rotating glass slide. Annealing was performed using a gradient method: low temperature annealing at 65℃ for 2 min, and high temperature annealing at 105℃ for 6 min.

[0074] (6) The isopropanol solution of EDADI was spin-coated onto the perovskite layer at a rotation speed of 3000 rpm / min for 30 s and then annealed at 105 °C for 5 min.

[0075] (7) Quickly transfer the silicon wafer with deposited perovskite into the vacuum chamber and perform vacuuming. Wait until the vacuum level drops to 4×10⁻⁶. -4 Below Pa, electron transport layer C is constructed using a rate of 0.1–0.2 Å / s. 60 Vacuum deposition with a thickness of 20 nm;

[0076] (8) Transfer the silicon wafer to the ALD device and evacuate it to below 20 Pa. Perform 120 cycles of water and tin sources to deposit SnO2 with a thickness of 20 nm.

[0077] (9) The substrate is further transferred to a metal vacuum evaporation glove box and evacuated to a vacuum level of 5×10⁻⁶. -4 Below Pa, metallic Ag was deposited at a rate of 0.5-1 Å / s to a thickness of 800-1000 nm;

[0078] (10) Transfer the device further into the organic vapor deposition chamber and evacuate to 4×10⁻⁶. -4 After Pa, MgF2 was deposited at a rate of 0.5-1 Å / s to a thickness of 150 nm.

[0079] See Figure 6 The photoelectric conversion efficiency and fill factor of Example 2 are significantly higher than those of Comparative Example 2, demonstrating better device performance.

[0080] The above description is merely a preferred embodiment of the present invention. It should be understood that the present invention is not limited to the forms disclosed herein and should not be construed as excluding other embodiments. It can be used in various other combinations, modifications, and environments, and can be altered within the scope of the concept described herein through the above teachings or related technologies or knowledge. Modifications and variations made by those skilled in the art that do not depart from the spirit and scope of the present invention should be within the protection scope of the appended claims.

Claims

1. A method for interface control in perovskite / silicon tandem solar cells, characterized in that: The method includes introducing a self-assembled monolayer on the surface of a transparent conductive oxide electrode in a silicon-based battery. The self-assembled monolayer is composed of small organic molecules, which include at least an anchoring group capable of chemically anchoring to the transparent conductive oxide electrode, a rigid linking group with an aromatic structure, and a charge transport head group with an extended π-conjugated structure. In the process of introducing a self-assembled monolayer, the organic small molecules are dissolved in a mixed solvent system containing at least two organic solvents with different boiling points, and the solution is coated on the surface of a transparent conductive oxide electrode to form a wet film. Through a subsequent heat treatment process, the organic small molecules are induced to undergo ordered self-assembly by utilizing the difference in evaporation rates of different solvents, thereby forming a self-assembled monolayer with stable orientation and uniform coverage on the surface of the transparent conductive oxide electrode.

2. The interface control method according to claim 1, characterized in that, The anchoring groups of the organic small molecules include phosphonic acid groups, phosphate groups, carboxylic acid groups, silane groups, or combinations thereof; the rigid linking groups include monocyclic aromatic structures, polycyclic aromatic structures, or fused-ring aromatic structures; and the charge transport head groups are aromatic amines, carbazoles, triarylamines, or their derivatives.

3. The interface control method according to claim 1, characterized in that, The organic small molecule is 4-(7H-dibenzo[c]carbazole-7-yl)phenylphosphonic acid, 4-(9H-carbazole-9-yl)phenylphosphonic acid, p-(diphenylamino)phenylphosphonic acid, or pyrene-diphenylaminophosphonic acid.

4. The interface control method according to claim 1, characterized in that, The mixed solvent system includes a low-boiling-point polar solvent and a high-boiling-point weakly polar solvent, wherein the low-boiling-point polar solvent accounts for 60-90 vol and the high-boiling-point weakly polar solvent accounts for 10-40 vol.

5. The interface control method according to claim 4, characterized in that, The low-boiling-point polar solvent is an alcohol solvent, and the high-boiling-point weakly polar solvent is an aromatic solvent or a halogenated aromatic solvent.

6. The interface control method according to claim 1, characterized in that, The heat treatment temperature is 65–135°C.

7. A perovskite / silicon tandem solar cell, characterized in that, It includes a silicon substrate cell, a transparent conductive oxide electrode disposed on the silicon substrate cell, a self-assembled monolayer disposed on the transparent conductive oxide electrode, a perovskite light-absorbing layer disposed on the self-assembled monolayer, and a carrier transport layer and an electrode layer disposed sequentially on the perovskite light-absorbing layer.

8. The perovskite / silicon tandem solar cell according to claim 7, characterized in that, The silicon substrate cell is a textured silicon heterojunction cell or a tunnel oxide passivated contact silicon cell.

9. The perovskite / silicon tandem solar cell according to claim 7, characterized in that, The perovskite light-absorbing layer is a wide-bandgap perovskite material.

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