SoP packaging structure and preparation method thereof

Abstract

The application provides a SoP packaging structure and a preparation method thereof. Based on the settings of a TGV metal column, a TSV composite adapter plate and a rewiring layer, a high-density integrated composite adapter plate can be prepared. After the first chip and the second chip are combined, a high-density SoP packaging structure can be formed. After a cutting process, multiple computing power modules can be accommodated in one SoP packaging monomer structure, meeting the needs of small size, high integration and high economic efficiency. Furthermore, a heat-conducting dielectric layer covering the TSV composite adapter plate is prepared in the groove, good heat dissipation can be achieved, and product quality is improved.

Description

Technical Field

[0001] This invention belongs to the field of semiconductor manufacturing technology and relates to a SoP packaging structure and its preparation method. Background Technology

[0002] Driven by the ever-increasing integration density of various electronic components (such as transistors, diodes, resistors, and capacitors), the semiconductor industry has experienced rapid growth. As the performance requirements of high-speed AI products become increasingly demanding, chip performance becomes increasingly crucial, and advanced 2.5D packaging will lead to larger and larger package sizes as chip performance improves.

[0003] The fabrication of existing 2.5D packaging structures typically involves first fabricating 2.5D package monomers, and then bonding them to a substrate via flip-chip (FC) for electrical connection. However, traditional 2.5D packaging faces process challenges when dealing with ultra-large package structures. For example, the current 2.5D package structure (2×SoC+4×HBM) has a substrate size of approximately 90×90mm. To meet the demands of high computing power, the package size will continue to increase, with future substrate sizes reaching 100-150mm. For a 300×300mm wafer, only two package structures can be accommodated on a single wafer, resulting in low economic efficiency.

[0004] Therefore, it is necessary to provide a SoP (System on Panel) packaging structure and its fabrication method. Summary of the Invention

[0005] In view of the shortcomings of the prior art described above, the purpose of this invention is to provide a SoP packaging structure and its preparation method to solve the problem of low economic efficiency of the existing 2.5D packaging structure.

[0006] To achieve the above and other related objectives, the present invention provides a method for fabricating a SoP packaging structure, comprising the following steps:

[0007] A glass substrate is provided, the glass substrate including a first surface and a second surface disposed opposite to each other;

[0008] The glass substrate is patterned to form a first TGV groove, a recess, and a second TGV groove in the glass substrate, wherein the first TGV groove penetrates the glass substrate, and the recess is connected to and penetrates the glass substrate.

[0009] The first TGV groove is filled to form a first TGV metal column, the first TGV metal column including a first end and a second end disposed opposite to each other; and the second TGV groove is filled to form a second TGV metal column, the second TGV metal column including a first end and a second end disposed opposite to each other.

[0010] A TSV composite adapter board is provided, the TSV composite adapter board including a TSV adapter board, a first rewiring layer and a second rewiring layer located on opposite sides of the TSV adapter board and electrically connected to the TSV adapter board respectively, and a first metal bump located on the surface of the second rewiring layer and electrically connected to the second rewiring layer.

[0011] The TSV composite adapter plate is bonded into the groove, and the first metal bump is electrically connected to the first end of the second TGV metal post.

[0012] A thermally conductive dielectric layer is formed to fill the groove, and the thermally conductive dielectric layer is located on the periphery of the TSV composite adapter plate;

[0013] A third redistribution layer is formed on the first surface of the glass substrate. The third redistribution layer is electrically connected to the first end of the first TGV metal pillar, and the third redistribution layer is electrically connected to the first redistribution layer.

[0014] A fourth redistribution layer is formed on the second surface of the glass substrate. The fourth redistribution layer is electrically connected to the second end of the first TGV metal pillar, and the fourth redistribution layer is electrically connected to the second end of the second TGV metal pillar.

[0015] A first chip and a second chip are provided, and the first chip and the second chip are bonded to the third redistribution layer by an inverted bonding method. The first chip and the second chip are both electrically connected to the third redistribution layer, and the first chip and the second chip are both located on the TSV composite adapter board and are both electrically connected to the TSV composite adapter board.

[0016] A second metal bump is formed on the surface of the fourth redistribution layer, and the second metal bump is electrically connected to the fourth redistribution layer.

[0017] The cutting process is performed to form a SoP (Sort of Package) single-unit structure.

[0018] Optionally, the step of forming the thermally conductive dielectric layer includes:

[0019] The thermally conductive dielectric layer is formed on the first surface of the glass substrate using a coating method. The thermally conductive dielectric layer fills the groove and covers the TSV composite adapter board.

[0020] Perform a heat curing process;

[0021] A grinding process is used to remove the thermally conductive dielectric layer located on the first surface of the glass substrate, exposing the first end of the first TGV metal pillar and the first redistribution layer.

[0022] Optionally, the method for forming the groove in the glass substrate includes mechanical cutting; the method for forming the first TGV groove and the second TGV groove in the glass substrate includes laser cutting.

[0023] Optionally, the first TGV groove and the second TGV groove are first formed by laser method, and then the groove is formed by mechanical cutting method; or the groove is first formed by mechanical cutting method, and then the first TGV groove and the second TGV groove are formed by laser method.

[0024] Optionally, before performing the dicing process, the method further includes a step of forming a rigid reinforcement on the third redistribution layer, wherein the rigid reinforcement is located on the periphery of the first chip and the second chip; the rigid reinforcement includes a metal rigid reinforcement or a semiconductor rigid reinforcement.

[0025] Optionally, the method further includes the step of forming a bottom fill layer, which fills the gap between the first chip and the third redistribution layer and the gap between the second chip and the third redistribution layer.

[0026] Optionally, the glass substrate has a size of 100-600 mm; the SoP package unit structure includes a 1×SoC+4×HBM package unit structure; and the shape of the SoP package unit structure includes a circle, an ellipse, or a polygon.

[0027] The present invention also provides a SoP packaging structure, the SoP packaging structure comprising:

[0028] A glass substrate, the glass substrate comprising a first surface and a second surface disposed opposite to each other;

[0029] The first TGV groove penetrates the glass substrate;

[0030] The groove and the second TGV groove are connected and penetrate the glass substrate;

[0031] A first TGV metal column, the first TGV metal column filling the first TGV groove, including a first end and a second end disposed opposite to each other;

[0032] The second TGV metal column fills the second TGV groove, including a first end and a second end that are disposed opposite to each other.

[0033] The TSV composite adapter board, which is bonded to the groove, includes a TSV adapter board, a first redistribution layer and a second redistribution layer located on opposite sides of the TSV adapter board and electrically connected to the TSV adapter board respectively, and a first metal bump located on the surface of the second redistribution layer and electrically connected to the second redistribution layer, wherein the first metal bump is electrically connected to the first end of the second TGV metal post.

[0034] A thermally conductive dielectric layer is located in the groove and on the periphery of the TSV composite adapter plate;

[0035] The third redistribution layer is located on the first surface of the glass substrate, electrically connected to the first end of the first TGV metal pillar, and electrically connected to the first redistribution layer.

[0036] A fourth redistribution layer is located on the second surface of the glass substrate, electrically connected to the second end of the first TGV metal pillar, and electrically connected to the second end of the second TGV metal pillar.

[0037] The first chip and the second chip are both inverted and bonded to the third redistribution layer and electrically connected to the third redistribution layer. The first chip and the second chip are both located above the TSV composite adapter board and are electrically connected to the TSV composite adapter board.

[0038] The second metal bump is located on the surface of the fourth redistribution layer and is electrically connected to the fourth redistribution layer.

[0039] Optionally, it further includes a rigid reinforcement located on the third redistribution layer and surrounding the first chip and the second chip, the rigid reinforcement including a metal rigid reinforcement or a semiconductor rigid reinforcement; and a bottom fill layer filling the gap between the first chip and the third redistribution layer and filling the gap between the second chip and the third redistribution layer.

[0040] Optionally, the size of the glass substrate includes 100 to 600 mm; the SoP packaging structure includes a 1×SoC+4×HBM packaging structure; the shape of the SoP packaging structure includes circular, elliptical, or polygonal.

[0041] As described above, the SoP packaging structure and its fabrication method of the present invention, based on the arrangement of TGV metal pillars, TSV composite adapter board and redistribution layer, can fabricate a high-density integrated composite adapter board. After combining the first chip and the second chip, a high-density SoP packaging structure can be formed. After the cutting process, multiple computing modules can be accommodated in a single SoP packaging unit structure, meeting the requirements of small packaging size, high integration and high economic efficiency. Furthermore, the thermally conductive dielectric layer covering the TSV composite adapter board is fabricated in the groove, which can achieve good heat dissipation and improve product quality. Attached Figure Description

[0042] Figure 1 The diagram shows a schematic of the fabrication process of the SoP packaging structure in an embodiment of the present invention.

[0043] Figure 2 The diagram shown is a top view of the glass substrate in an embodiment of the present invention.

[0044] Figure 3 The diagram shown is a schematic representation of the structure of a patterned glass substrate in an embodiment of the present invention.

[0045] Figure 4 This is a schematic diagram of another structure of the patterned glass substrate in an embodiment of the present invention.

[0046] Figure 5 The diagram shows the structure after the formation of the first TGV metal column and the second TGV metal column in an embodiment of the present invention.

[0047] Figure 6 The diagram shown is a structural schematic of the TSV composite adapter plate provided in an embodiment of the present invention.

[0048] Figure 7 The diagram shown is a structural schematic of the TSV composite adapter board after bonding in an embodiment of the present invention.

[0049] Figure 8 The diagram shown is a schematic representation of the structure after the formation of the thermally conductive dielectric layer in an embodiment of the present invention.

[0050] Figure 9 The diagram shown is a schematic representation of the structure after the thermally conductive dielectric layer is thinned in an embodiment of the present invention.

[0051] Figure 10 The diagram shown is a schematic representation of the structure after the formation of the third redistribution layer in an embodiment of the present invention.

[0052] Figure 11 The diagram shown is a schematic representation of the structure after the fourth redistribution layer is formed in an embodiment of the present invention.

[0053] Figure 12The diagram shows the structure after bonding the first chip and the second chip in an embodiment of the present invention.

[0054] Figure 13 The diagram shown is a structural schematic of the second metal bump after it has been formed in an embodiment of the present invention.

[0055] Figure 14 The diagram shown is a top view of the SoP packaging structure formed before the cutting process in an embodiment of the present invention.

[0056] Figure 15 The diagram shown is a top view of the SoP (Sort of Package) unit structure formed after the cutting process in an embodiment of the present invention.

[0057] Figure 16 The diagram shows the morphological structure of the SoP packaging unit structure formed after the cutting process in an embodiment of the present invention.

[0058] Figure 17 The diagram shown is a structural schematic of the rigid reinforcement member formed in an embodiment of the present invention.

[0059] Figure 18 The diagram shown is a top view of the SoP packaging structure with rigid reinforcement formed in an embodiment of the present invention.

[0060] Explanation of reference numerals in the attached figures

[0061] 100 glass substrate

[0062] 101 First TGV Tank

[0063] 102 Second TGV tank

[0064] 103 Grooves

[0065] 201 First TGV Metal Column

[0066] 202 Second TGV Metal Column

[0067] 300 TSV Composite Adapter Board

[0068] 301 silicon layer

[0069] 302 TSV metal pillar

[0070] 303 First metal bump

[0071] 310 First Rerouting Layer

[0072] 320 Second Rerouting Layer

[0073] 330 Third Rerouting Layer

[0074] 340 Fourth Rerouting Layer

[0075] 400 thermally conductive dielectric layer

[0076] 510 First Chip

[0077] 520 Second Chip

[0078] 600 bottom fill layer

[0079] 700 Second Metal Bump

[0080] 800 rigid reinforcement Detailed Implementation

[0081] The following specific examples illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.

[0082] In the detailed description of embodiments of the present invention, for ease of explanation, the cross-sectional views illustrating the device structure may be partially enlarged and not to scale. Furthermore, the schematic diagrams are merely examples and should not limit the scope of protection of the present invention. In actual fabrication, the three-dimensional spatial dimensions of length, width, and depth should be included.

[0083] For ease of description, spatial relation terms such as “below,” “under,” “lower than,” “below,” “above,” and “upper” may be used herein to describe the relationship between one element or feature shown in the accompanying drawings and other elements or features. It will be understood that these spatial relation terms are intended to include orientations of the device in use or operation other than those depicted in the drawings, and may include embodiments in which the first and second features are formed in direct contact, or embodiments in which additional features are formed between the first and second features, such that the first and second features may not be in direct contact. Furthermore, when a layer is referred to as “between” two layers, it may be the only layer between the two layers, or there may be one or more layers in between.

[0084] It should be noted that the illustrations provided in this embodiment are only schematic representations of the basic concept of the present invention. Therefore, the illustrations only show the components related to the present invention and are not drawn according to the actual number, shape and size of the components in the actual implementation. In the actual implementation, the form, quantity and proportion of each component can be arbitrarily changed, and the layout of the components may also be more complex.

[0085] like Figure 1This embodiment provides a method for fabricating a SoP (Sort of Planes) package structure. Based on the configuration of TGV metal pillars, TSV composite adapter boards, and redistribution layers, a high-density integrated composite adapter board can be fabricated. After combining the first chip and the second chip, a high-density SoP package structure can be formed. After the cutting process, multiple computing modules can be accommodated in a single SoP package structure, meeting the requirements of small package size, high integration, and high economic efficiency. Furthermore, a thermally conductive dielectric layer covering the TSV composite adapter board is fabricated in the groove, which can achieve good heat dissipation and improve product quality.

[0086] The following is in conjunction with the appendix Figures 2 to 18 The fabrication of the aforementioned SoP packaging structure is further described, specifically including:

[0087] First, refer to Figure 1 and Figure 2 Step S1 is executed, providing a glass substrate 100, the glass substrate 100 including a first surface and a second surface disposed opposite to each other.

[0088] As an example, the size of the glass substrate 100 may include 100 to 600 mm.

[0089] Specifically, the size of the glass substrate 100 may include, for example, 100-600 mm, and the shape of the glass substrate 100 may include, for example, a square, a rectangle, a circle, etc. In this embodiment, refer to... Figure 2 The glass substrate 100 is square and its size is 600×600mm. However, the size of the glass substrate 100 is not limited to this. For example, it may include 100×100mm, 200×200mm, 300×300mm, 500×500mm, etc. The shape of the glass substrate 100 is not limited to square. It may also be rectangular or circular, etc.

[0090] Next, refer to Figure 1 , Figure 3 and Figure 4 In step S2, the glass substrate 100 is patterned to form a first TGV groove 101, a recess 103 and a second TGV groove 102 in the glass substrate 100. The first TGV groove 101 penetrates the glass substrate 100, and the recess 103 is connected to the second TGV groove 102 and penetrates the glass substrate 100.

[0091] As an example, the method of forming the groove 103 in the glass substrate 100 includes mechanical cutting; the method of forming the first TGV groove 101 and the second TGV groove 102 in the glass substrate 100 includes laser cutting.

[0092] This includes first forming the first TGV groove 101 and the second TGV groove 102 using a laser method, and then forming the groove 103 using a mechanical cutting method; or first forming the groove 103 using a mechanical cutting method, and then forming the first TGV groove 101 and the second TGV groove 102 using a laser method.

[0093] Specifically, when forming the groove 103 using a mechanical cutting method, the morphology of the groove 103 can be adjusted according to the type of grinding wheel selected in the mechanical cutting process or the control of mechanical process parameters, such as... Figure 3 and Figure 4 The diagram illustrates the morphology of the groove 103 with right angles and rounded corners. When the groove 103 with rounded corners is used, it facilitates the filling of subsequent materials, reduces stress, and decreases the occurrence of cracks. In this embodiment, the groove 103 is preferably shaped with rounded corners.

[0094] The order in which the first TGV groove 101, the second TGV groove 102, and the groove 103 are formed is not limited here. The specific operations for preparing the first TGV groove 101 and the second TGV groove 102 using the laser method are not limited here. The size, morphology, and distribution of the first TGV groove 101, the second TGV groove 102, and the groove 103 are not excessively restricted here.

[0095] Next, refer to Figure 1 and Figure 5 In step S3, the first TGV groove 101 is filled to form a first TGV metal column 201, the first TGV metal column 201 includes a first end and a second end that are disposed opposite to each other, and the second TGV groove 102 is filled to form a second TGV metal column 202, the second TGV metal column 202 includes a first end and a second end that are disposed opposite to each other.

[0096] Specifically, the first TGV metal pillar 201 filling the first TGV tank 101 and the second TGV metal pillar 202 filling the second TGV tank 102 can be formed by electroplating, and the first TGV metal pillar 201 and the second TGV metal pillar 202 can be formed simultaneously.

[0097] Before electroplating, a metal seed layer (not shown) is formed on the surface of the glass substrate 100 by a method such as sputtering. Then, a metal layer is formed by electroplating based on the metal seed layer. The specific operation of the electroplating method is not limited here.

[0098] Next, refer to Figure 1 and Figure 6In step S4, a TSV composite adapter board 300 is provided. The TSV composite adapter board 300 includes a TSV adapter board, a first rewiring layer 310 and a second rewiring layer 320 located on opposite sides of the TSV adapter board and electrically connected to the TSV adapter board respectively, and a first metal bump 303 located on the surface of the second rewiring layer 320 and electrically connected to the second rewiring layer 320.

[0099] Specifically, the TSV adapter board includes a silicon layer 301 and a TSV metal pillar 302 penetrating the silicon layer 301. The first redistribution layer 310 and the second redistribution layer 320 are electrically connected to the first end and the second end of the TSV metal pillar 302, respectively. The first redistribution layer 310 and the second redistribution layer 320 enable the TSV composite adapter board 300 to have a smaller line width / spacing to meet the requirements of subsequent high-density electrical connections. The line width of the TSV composite adapter board 300 can be 0.4μm to 1μm, such as 0.4μm, 0.5μm, 0.8μm, 1μm, etc., and the line spacing of the TSV composite adapter board 300 can be 0.4μm to 1μm, such as 0.4μm, 0.5μm, 0.8μm, 1μm, etc.

[0100] The specific materials, structures, and fabrication of the first redistribution layer 310 and the second redistribution layer 320 are not subject to excessive restrictions here, and can be selected as needed.

[0101] To facilitate subsequent electrical connections of the TSV composite adapter board 300, the first metal bump 303 is formed on the surface of the second rewiring layer 320.

[0102] Next, refer to Figure 1 and Figure 7 In step S5, the TSV composite adapter plate 300 is bonded to the groove 103, and the first metal bump 303 is electrically connected to the first end of the second TGV metal post 202.

[0103] Next, refer to Figure 1 , Figure 8 and Figure 9 Step S6 is executed to form a thermally conductive dielectric layer 400 that fills the groove 103. The thermally conductive dielectric layer 400 is located on the periphery of the TSV composite adapter plate 300. By setting the thermally conductive dielectric layer 400, good heat dissipation can be achieved and product quality can be improved.

[0104] As an example, the steps for forming the thermally conductive dielectric layer 400 may include:

[0105] The thermally conductive dielectric layer 400 is formed on the first surface of the glass substrate 100 by a coating method. The thermally conductive dielectric layer 400 fills the groove 103 and covers the TSV composite adapter board 300.

[0106] Perform a heat curing process;

[0107] A grinding process is used to remove the thermally conductive dielectric layer 300 located on the first surface of the glass substrate 100, exposing the first end of the first TGV metal pillar 201 and the first redistribution layer 310.

[0108] The material of the thermally conductive dielectric layer 400 may include epoxy resin used in semiconductor lamination processes; the polishing process may include mechanical polishing or chemical mechanical polishing, without excessive limitation. After the polishing process, a flat surface can be obtained, which facilitates subsequent processes and exposes the first redistribution layer 310 and the first end of the first TGV metal pillar 201 for subsequent electrical connection.

[0109] Next, refer to Figure 1 and Figure 10 In step S7, a third redistribution layer 330 is formed on the first surface of the glass substrate 100. The third redistribution layer 330 is electrically connected to the first end of the first TGV metal pillar 201, and the third redistribution layer 330 is electrically connected to the first redistribution layer 310.

[0110] Specifically, the preparation, material, and structure of the third redistribution layer 330 are not limited here and can be selected as needed.

[0111] Next, refer to Figure 1 and Figure 11 In step S8, a fourth redistribution layer 340 is formed on the second surface of the glass substrate 100. The fourth redistribution layer 340 is electrically connected to the second end of the first TGV metal pillar 201 and to the second end of the second TGV metal pillar 202.

[0112] Specifically, the preparation, material, and structure of the fourth redistribution layer 340 are not limited here and can be selected as needed.

[0113] Next, refer to Figure 1 and Figure 12In step S9, a first chip 510 and a second chip 520 are provided, and the first chip 510 and the second chip 520 are bonded to the third redistribution layer 330 by inverted bonding. The first chip 510 and the second chip 520 are both electrically connected to the third redistribution layer 330, and the first chip 510 and the second chip 520 are both located on the TSV composite adapter board 300 and are both electrically connected to the TSV composite adapter board 300.

[0114] Specifically, the first chip 510 and the second chip 520 can achieve high-speed signal connection through the TSV composite adapter board 300, such as... Figure 15 In the diagram, the area within the dashed box A represents the interconnection area between the first chip 510 and the second chip 520, specifically the area where the first chip 510 and the second chip 520 are electrically connected to the TSV composite adapter board 300 via the third redistribution layer 330.

[0115] As an example, the first chip 510 may include, for example, a system on chip technology (SoC), and the second chip 520 may include, for example, a high-bandwidth memory (HBM) chip.

[0116] Specifically, in this embodiment, the first chip 510 is a SoC chip and the second chip 520 is an HBM chip, but the types of the first chip 510 and the second chip 520 are not limited to these.

[0117] For further details, please refer to [link / reference]. Figure 13 After bonding the first chip 510 and the second chip 520, it is preferable to fill the space between the first chip 510 and the third redistribution layer 330, and between the second chip 520 and the third redistribution layer 330, with an underfill layer 600 to improve bonding strength and protect the bonding interface. The underfill layer 600 can be made of a material with good adhesion and insulation, such as epoxy resin, polyimide, or silicone.

[0118] Next, refer to Figure 1 and Figure 13 In step S10, a second metal bump 700 is formed on the surface of the fourth redistribution layer 340. The second metal bump 700 is electrically connected to the fourth redistribution layer 340. The type and material of the second metal bump 700 are not excessively restricted here.

[0119] See Figure 14The diagram illustrates a top view of the prepared SoP packaging structure in this embodiment.

[0120] Next, refer to Figure 1 and Figure 14 Step S11 is executed to perform a cutting process to form a SoP package single-unit structure.

[0121] Specifically, the cutting process may include mechanical cutting, laser cutting, or a combination thereof. The specific method is not excessively limited here. Through the cutting process, the SoP packaging structure can be transformed into the required SoP packaging single-unit structure.

[0122] As an example, the SoP package monolithic structure may include a 1×SoC+4×HBM package monolithic structure, but is not limited to this; see reference [link to documentation]. Figure 15 In this embodiment, the SoP package single-unit structure includes six 1×SoC+4×HBM computing modules, which can achieve the packaging requirements of small size, high integration and high cost-effectiveness.

[0123] As an example, the shape of the SoP package unit structure may include, for example, a circle, an ellipse, or a polygon.

[0124] For details, please refer to Figure 15 In this embodiment, the shape of the SoP package unit structure is a 300×300mm square, but the shape of the SoP package unit structure is not limited to this, such as... Figure 16 It may also include other polygons such as circles, ellipses or triangles, without excessive restrictions here.

[0125] As an example, the method further includes the step of forming a rigid reinforcement 800 on the third redistribution layer 330, the rigid reinforcement 800 being located around the first chip 510 and the second chip 520, the rigid reinforcement 800 comprising a metal rigid reinforcement or a semiconductor rigid reinforcement.

[0126] For details, please refer to Figure 17 and Figure 18 This diagram illustrates the structure after the rigid reinforcement 800 is formed in the open area surrounding the first chip 510 and the second chip 520. The rigid reinforcement 800 increases the rigidity of the package structure, further reducing the probability of warpage. Regarding the material of the rigid reinforcement 800, it can be made of metal or semiconductor materials, etc., without excessive limitation.

[0127] See Figures 2 to 18 The present invention also provides a SoP packaging structure, the SoP packaging structure comprising:

[0128] A glass substrate 100, the glass substrate 100 including a first surface and a second surface disposed opposite to each other;

[0129] The first TGV groove 101 penetrates the glass substrate 100;

[0130] Groove 103 and second TGV groove 102, wherein groove 103 and second TGV groove 102 are connected and penetrate the glass substrate 100;

[0131] The first TGV metal column 201 fills the first TGV groove 101 and includes a first end and a second end that are disposed opposite to each other.

[0132] The second TGV metal column 202 fills the second TGV groove 102 and includes a first end and a second end that are disposed opposite to each other.

[0133] TSV composite adapter board 300, which is bonded to the groove 103, includes a TSV adapter board, a first redistribution layer 310 and a second redistribution layer 320 located on opposite sides of the TSV adapter board and electrically connected to the TSV adapter board respectively, and a first metal bump 303 located on the surface of the second redistribution layer 320 and electrically connected to the second redistribution layer 320, and the first metal bump 303 is electrically connected to the first end of the second TGV metal post 202;

[0134] A thermally conductive dielectric layer 400 is located in the groove 103 and on the periphery of the TSV composite adapter plate 300.

[0135] The third redistribution layer 330 is located on the first surface of the glass substrate 100, electrically connected to the first end of the first TGV metal pillar 201, and electrically connected to the first redistribution layer 310.

[0136] The fourth redistribution layer 340 is located on the second surface of the glass substrate 100, and is electrically connected to the second end of the first TGV metal pillar 201 and the second end of the second TGV metal pillar 202.

[0137] The first chip 510 and the second chip 520 are both inverted and bonded to the third redistribution layer 330 and are both electrically connected to the third redistribution layer 330. The first chip 510 and the second chip 520 are both located above the TSV composite adapter board 300 and are both electrically connected to the TSV composite adapter board 300.

[0138] The second metal bump 700 is located on the surface of the fourth redistribution layer 340 and is electrically connected to the fourth redistribution layer 340.

[0139] As an example, it also includes a rigid reinforcement 800 located on the third redistribution layer 330 and surrounding the first chip 510 and the second chip 520, the rigid reinforcement 800 including a metal rigid reinforcement or a semiconductor rigid reinforcement; it also includes a bottom filler layer 600 filling the gap between the first chip 510 and the third redistribution layer 330 and filling the gap between the second chip 520 and the third redistribution layer 330.

[0140] As an example, the glass substrate 100 has a size of 100 to 600 mm; the SoP packaging structure includes a 1×SoC+4×HBM packaging structure; and the shape of the SoP packaging structure includes a circle, an ellipse, or a polygon.

[0141] In this embodiment, the SoP packaging structure can be prepared using the above-described preparation method, but it is not limited to this method. Other preparation processes can also be used, and no excessive restrictions are imposed here. In this embodiment, the SoP packaging structure is directly prepared using the above-described preparation process. Therefore, the specific structure, materials, etc. of the SoP packaging structure can be referred to the description in the above preparation method, and will not be repeated here.

[0142] In summary, the SoP packaging structure and its fabrication method of the present invention, based on the arrangement of TGV metal pillars, TSV composite adapter board and redistribution layer, can fabricate a high-density integrated composite adapter board. After combining the first chip and the second chip, a high-density SoP packaging structure can be formed. Moreover, after the dicing process, multiple computing modules can be accommodated in a single SoP packaging unit structure, meeting the requirements of small packaging size, high integration and high economic efficiency. Furthermore, the thermally conductive dielectric layer covering the TSV composite adapter board is fabricated in the groove, which can achieve good heat dissipation and improve product quality.

[0143] The above embodiments are merely illustrative of the principles and effects of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by those skilled in the art without departing from the spirit and technical concept disclosed in the present invention should still be covered by the claims of the present invention.

Claims

1. A method for fabricating a SoP (Sort of Package) packaging structure, characterized in that, Includes the following steps: A glass substrate is provided, the glass substrate including a first surface and a second surface disposed opposite to each other; The glass substrate is patterned to form a first TGV groove, a recess, and a second TGV groove in the glass substrate, wherein the first TGV groove penetrates the glass substrate, and the recess is connected to and penetrates the glass substrate. The first TGV groove is filled to form a first TGV metal column, the first TGV metal column including a first end and a second end disposed opposite to each other; and the second TGV groove is filled to form a second TGV metal column, the second TGV metal column including a first end and a second end disposed opposite to each other. A TSV composite adapter board is provided, the TSV composite adapter board including a TSV adapter board, a first rewiring layer and a second rewiring layer located on opposite sides of the TSV adapter board and electrically connected to the TSV adapter board respectively, and a first metal bump located on the surface of the second rewiring layer and electrically connected to the second rewiring layer. The TSV composite adapter plate is bonded into the groove, and the first metal bump is electrically connected to the first end of the second TGV metal post. A thermally conductive dielectric layer is formed to fill the groove, and the thermally conductive dielectric layer is located on the periphery of the TSV composite adapter plate; A third redistribution layer is formed on the first surface of the glass substrate. The third redistribution layer is electrically connected to the first end of the first TGV metal pillar, and the third redistribution layer is electrically connected to the first redistribution layer. A fourth redistribution layer is formed on the second surface of the glass substrate. The fourth redistribution layer is electrically connected to the second end of the first TGV metal pillar, and the fourth redistribution layer is electrically connected to the second end of the second TGV metal pillar. A first chip and a second chip are provided, and the first chip and the second chip are bonded to the third redistribution layer by an inverted bonding method. The first chip and the second chip are both electrically connected to the third redistribution layer, and the first chip and the second chip are both located on the TSV composite adapter board and are both electrically connected to the TSV composite adapter board. A second metal bump is formed on the surface of the fourth redistribution layer, and the second metal bump is electrically connected to the fourth redistribution layer. The cutting process is performed to form a SoP (Sort of Package) single-unit structure.

2. The method for fabricating the SoP packaging structure according to claim 1, characterized in that: The steps for forming the thermally conductive dielectric layer include: The thermally conductive dielectric layer is formed on the first surface of the glass substrate using a coating method. The thermally conductive dielectric layer fills the groove and covers the TSV composite adapter board. Perform a heat curing process; A grinding process is used to remove the thermally conductive dielectric layer located on the first surface of the glass substrate, exposing the first end of the first TGV metal pillar and the first redistribution layer.

3. The method for fabricating the SoP packaging structure according to claim 1, characterized in that: The method for forming the groove in the glass substrate includes mechanical cutting; the method for forming the first TGV groove and the second TGV groove in the glass substrate includes laser cutting.

4. The method for fabricating the SoP packaging structure according to claim 3, characterized in that: The first TGV groove and the second TGV groove are first formed by laser method, and then the groove is formed by mechanical cutting method; or the groove is first formed by mechanical cutting method, and then the first TGV groove and the second TGV groove are formed by laser method.

5. The method for fabricating the SoP packaging structure according to claim 1, characterized in that: Before the dicing process, the method further includes a step of forming a rigid reinforcement on the third redistribution layer, wherein the rigid reinforcement is located on the periphery of the first chip and the second chip; the rigid reinforcement includes a metal rigid reinforcement or a semiconductor rigid reinforcement.

6. The method for fabricating the SoP packaging structure according to claim 1, characterized in that: It also includes the step of forming a bottom fill layer, which fills the gap between the first chip and the third redistribution layer and fills the gap between the second chip and the third redistribution layer.

7. The method for fabricating the SoP packaging structure according to claim 1, characterized in that: The glass substrate has a size of 100-600 mm; the SoP package unit structure includes a 1×SoC+4×HBM package unit structure; the shape of the SoP package unit structure includes circular, elliptical or polygonal.

8. A SoP packaging structure, characterized in that, The SoP encapsulation structure includes: A glass substrate, the glass substrate comprising a first surface and a second surface disposed opposite to each other; The first TGV groove penetrates the glass substrate; The groove and the second TGV groove are connected and penetrate the glass substrate; A first TGV metal column, the first TGV metal column filling the first TGV groove, including a first end and a second end disposed opposite to each other; The second TGV metal column fills the second TGV groove, including a first end and a second end that are disposed opposite to each other. The TSV composite adapter board, which is bonded to the groove, includes a TSV adapter board, a first redistribution layer and a second redistribution layer located on opposite sides of the TSV adapter board and electrically connected to the TSV adapter board respectively, and a first metal bump located on the surface of the second redistribution layer and electrically connected to the second redistribution layer, wherein the first metal bump is electrically connected to the first end of the second TGV metal post. A thermally conductive dielectric layer is located in the groove and on the periphery of the TSV composite adapter plate; The third redistribution layer is located on the first surface of the glass substrate, electrically connected to the first end of the first TGV metal pillar, and electrically connected to the first redistribution layer. A fourth redistribution layer is located on the second surface of the glass substrate, electrically connected to the second end of the first TGV metal pillar, and electrically connected to the second end of the second TGV metal pillar. The first chip and the second chip are both inverted and bonded to the third redistribution layer and electrically connected to the third redistribution layer. The first chip and the second chip are both located above the TSV composite adapter board and are electrically connected to the TSV composite adapter board. The second metal bump is located on the surface of the fourth redistribution layer and is electrically connected to the fourth redistribution layer.

9. The SoP packaging structure according to claim 8, characterized in that: It also includes a rigid reinforcement located on the third redistribution layer and surrounding the first chip and the second chip, the rigid reinforcement including a metal rigid reinforcement or a semiconductor rigid reinforcement; it also includes a bottom fill layer filling the gap between the first chip and the third redistribution layer and filling the gap between the second chip and the third redistribution layer.

10. The SoP packaging structure according to claim 8, characterized in that: The glass substrate has a size of 100 to 600 mm; the SoP packaging structure includes a 1×SoC+4×HBM packaging structure; the shape of the SoP packaging structure includes circular, elliptical or polygonal.

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