Active thermal management of substrate, heated end effector, and delivery device including heated end effector.

By using a heated end effector and an active thermal control system during substrate transport, the problems of thermal stress and slip defects caused by temperature non-uniformity were solved, resulting in higher processing quality and throughput.

CN122139487APending Publication Date: 2026-06-02BROOKS AUTOMATION US LLC
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
BROOKS AUTOMATION US LLC
Filing Date
2024-09-06
Publication Date
2026-06-02

AI Technical Summary

Technical Problem

During substrate transport, thermal stress and crystal slip defects caused by temperature inhomogeneity at the contact points affect processing quality and yield.

Method used

The system employs a heated end effector and an active thermal control system to actively manage substrate temperature by heating or cooling the end effector and substrate holding stage, ensuring temperature uniformity and reducing thermal shock.

Benefits of technology

It improves the temperature uniformity of substrate processing, reduces thermal stress and slip defects, and enhances processing quality and throughput.

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Abstract

A substrate delivery device includes a base, a hinged arm, and an end effector. The hinged arm is connected to the base via an end joint, about which it rotates and extends. The end effector is connected to the hinged arm at a distal joint and has a substrate or carrier plate holding stage thereon. The end effector is a non-conductive or semi-conductive end effector made of a ceramic material, such that the end effector as a whole is substantially non-conductive or semi-conductive. The end effector has an active heater that is connected to and heat-exchanges with the substantially non-conductive or semi-conductive material to controllably heat the substrate or carrier plate holding stage to a temperature of 400°C or higher during substrate delivery.
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Citation Information

Patent Citations

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