A plasma-assisted oxidized silicon carbide coated chamber component and method of making the same

Abstract

The application belongs to the technical field of semiconductor manufacturing equipment, and provides a plasma-assisted oxidized silicon carbide coating chamber component and a preparation method thereof; and aims to solve the technical problems of short service life of the coating of the existing chamber component, easy generation of particle pollution, and cleaning difficulty, etc., the method comprising multiple-step cleaning and plasma activation pretreatment on the chamber component, growing a silicon carbide main coating through a chemical vapor deposition method, and performing halogen etching on the coating surface to improve the activity; subsequently, a gradient composite protective layer is generated in situ on the silicon carbide surface through a plasma-assisted oxidation process, and the composite layer comprises a functional layer introduced by an organometallic precursor; through the construction of the gradient composite protective layer, the corrosion resistance, high-temperature stability and service life of the chamber component are improved, and the adhesion of parasitic deposition is reduced, so that the cleaning and maintenance of the component are more efficient and convenient.

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