Sensing device, display device, and electronic device

Abstract

The disclosure relates to a sensing device, a display device, and an electronic device. According to an embodiment of the disclosure, a sensing device includes a plurality of sensors arranged in a matrix form in a sensing area, a plurality of sensing lines respectively electrically connected to the plurality of sensors, and a first multiplexer electrically connected between the plurality of sensing lines and a plurality of pads. The sensing area includes a first area and a second area. A first sub-multiplexer of the first multiplexer is electrically connected to sensors of the plurality of sensors in the first area. A second sub-multiplexer of the first multiplexer is electrically connected to sensors of the plurality of sensors in the second area. The first sub-multiplexer is disposed at one side of the sensing area, and the second sub-multiplexer is disposed at the other side of the sensing area.

Description

[0001] Cross-reference to related applications

[0002] This application claims priority to Korean Patent Application No. 10-2024-0178613, filed on December 4, 2024, with the Korean Intellectual Property Office, the entire disclosure of which is incorporated herein by reference. Technical Field

[0003] Embodiments of this disclosure relate to sensing devices and display devices and electronic devices that include sensing devices. Background Technology

[0004] With the increasing interest in information display in recent years, the demand for display devices for displaying images has increased in various forms. Furthermore, research and development are underway on display devices including touch sensors to ensure user convenience and further expand application areas. Summary of the Invention

[0005] The purpose of this disclosure is to provide a sensing device capable of minimizing boundaries (or useless space, non-sensing area) as well as a display device and electronic device including the sensing device.

[0006] However, the subject matter of this disclosure is not limited to the above, and other technical subjects not mentioned will be clearly understood by those skilled in the art from the following description.

[0007] A sensing device according to an embodiment of the present disclosure includes: a plurality of sensors arranged in a matrix in a sensing region; a plurality of sensing lines electrically connected to the plurality of sensors respectively; and a first multiplexer electrically connected between the plurality of sensing lines and a plurality of pads, wherein the sensing region includes a first region and a second region, wherein the first multiplexer includes: a first sub-multiplexer electrically connected to a sensor in the first region of the plurality of sensors; and a second sub-multiplexer electrically connected to a sensor in the second region of the plurality of sensors, wherein the first sub-multiplexer is disposed on one side of the sensing region and the second sub-multiplexer is disposed on the other side of the sensing region.

[0008] In an embodiment, the first sub-multiplexer and the second sub-multiplexer may be spaced apart from each other in a first direction, and the sensing area is located between the first sub-multiplexer and the second sub-multiplexer, and the first area and the second area may be arranged along a second direction intersecting the first direction.

[0009] In an embodiment, the first sub-multiplexer may be located on one side of the first region but not on one side of the second region, and the second sub-multiplexer may be located on the other side of the second region but not on the other side of the first region.

[0010] In an embodiment, the sensing device may further include: a second multiplexer electrically connected between the first multiplexer and a plurality of pads, wherein the second multiplexer and the plurality of pads may be arranged along a second direction relative to the sensing area.

[0011] In an embodiment, the first multiplexer may include: a first transistor electrically connected between one of the multiple sensing lines and a first driving line; and a second transistor electrically connected between one sensing line and a connection line; and the second multiplexer may include: a third transistor electrically connected between the connection line and one of the multiple pads; and a fourth transistor electrically connected between the connection line and the second driving line.

[0012] In one embodiment, a target pulse signal can be applied to a pad, a first drive signal having an opposite phase to the target pulse signal can be applied to a first drive line, and a second drive signal having the same phase as the target pulse signal can be applied to a second drive line.

[0013] In an embodiment, for sensors arranged in a column among a plurality of sensors, a second multiplexer can electrically connect a first sensor in the column to one of a plurality of pads, and the second multiplexer can electrically connect a second sensor in the column adjacent to the first sensor to a second drive line; and the first multiplexer can electrically connect a third sensor in the column, other than the first and second sensors, to a first drive line.

[0014] In an embodiment, the sensing device may further include: a plurality of first drive lines electrically connected to sensors arranged in a row of a plurality of sensors via a first multiplexer, wherein the plurality of first drive lines include first drive lines, wherein a portion of the plurality of first drive lines is disposed on one side of the sensing area and electrically connected to a first sub-multiplexer, and wherein the remaining portion of the plurality of first drive lines is disposed on the other side of the sensing area and electrically connected to a second sub-multiplexer.

[0015] In an embodiment, for sensors arranged in a row, the number of a portion of the plurality of first drive lines may be equal to the number of sensors arranged in the second direction in the first region, and the number of the remaining portions of the plurality of first drive lines may be equal to the number of sensors arranged in the second direction in the second region.

[0016] In one embodiment, multiple first drive lines may extend in a second direction in the region where the first multiplexer is located.

[0017] In one embodiment, the second drive line may extend in a second direction in the region where the second multiplexer is located.

[0018] In one embodiment, the second drive line may extend in a first direction in the region where the second multiplexer is located.

[0019] In one embodiment, the first multiplexer can selectively couple a sensor from a plurality of sensors arranged in two columns to one of a plurality of pads.

[0020] In an embodiment, the first sub-multiplexer and the second sub-multiplexer may be spaced apart from each other in a first direction, and the sensing area is located between the first sub-multiplexer and the second sub-multiplexer, and the first area and the second area may be arranged along the first direction.

[0021] A display device according to an embodiment of the present disclosure includes: a display unit including a substrate layer and a light-emitting element disposed on the substrate layer; a sensing unit disposed on the display unit, and the sensing unit including a plurality of sensors arranged in a matrix in a sensing region and a plurality of sensing lines electrically connected to the plurality of sensors respectively; and a first multiplexer electrically connected between the plurality of sensing lines and a plurality of pads, wherein the sensing region includes a first region and a second region, wherein the first multiplexer includes: a first sub-multiplexer electrically connected to a sensor in the first region among the plurality of sensors; and a second sub-multiplexer electrically connected to a sensor in the second region among the plurality of sensors, wherein the first sub-multiplexer is disposed on one side of the sensing region and the second sub-multiplexer is disposed on the other side of the sensing region.

[0022] In an embodiment, the first sub-multiplexer and the second sub-multiplexer may be spaced apart from each other in a first direction, and the sensing area is located between the first sub-multiplexer and the second sub-multiplexer, and the first area and the second area may be arranged along a second direction intersecting the first direction.

[0023] In an embodiment, the display device may further include: a second multiplexer electrically connected between the first multiplexer and a plurality of pads, wherein the second multiplexer and the plurality of pads are arranged along a second direction relative to the sensing area.

[0024] In an embodiment, the first multiplexer may include: a first transistor electrically connected between one of the multiple sensing lines and a first driving line; and a second transistor electrically connected between one sensing line and a connection line; and the second multiplexer may include: a third transistor electrically connected between the connection line and one of the multiple pads; and a fourth transistor electrically connected between the connection line and the second driving line.

[0025] In one embodiment, the display unit may include a light-emitting element layer containing a light-emitting device and an encapsulation layer disposed on the light-emitting element layer, wherein the sensing unit is directly disposed on the encapsulation layer.

[0026] An electronic device according to an embodiment of the present disclosure includes: a processor for providing input image data; a display device for displaying an image based on the input image data; and a power supply for supplying power to the display device, wherein the display device includes: a display unit including a substrate layer and a light-emitting element disposed on the substrate layer; a sensing unit disposed on the display unit, and the sensing unit includes a plurality of sensors arranged in a matrix in a sensing region and a plurality of sensing lines electrically connected to the plurality of sensors respectively; and a first multiplexer electrically connected to the plurality of sensing lines, wherein the sensing region includes a first region and a second region, wherein the first multiplexer includes a first sub-multiplexer electrically connected to a sensor in the first region and a second sub-multiplexer electrically connected to a sensor in the second region, and wherein the first sub-multiplexer is disposed on one side of the sensing region and the second sub-multiplexer is disposed on the other side of the sensing region.

[0027] Further details of the embodiments are included in the specification and drawings. Attached Figure Description

[0028] Figure 1 This is a schematic diagram illustrating a display device according to an embodiment.

[0029] Figure 2 It is shown that it includes Figure 1 A schematic plan view of an embodiment of a display unit in a display device.

[0030] Figure 3 It is shown that it includes Figure 1 A schematic plan view of an embodiment of a sensing unit in a display device.

[0031] Figure 4 It is shown Figure 3 A schematic plan view of an embodiment of the sensing unit.

[0032] Figure 5 It is shown Figure 1 A schematic cross-sectional view of the display device.

[0033] Figure 6 It is shown that Figure 1 A schematic diagram illustrating the operation of a display device detecting touch input.

[0034] Figure 7 It is shown that it includes Figure 4 A schematic circuit diagram of an embodiment of a multiplexer in a sensing unit.

[0035] Figure 8 This is a plan view showing the operation of the sensing device.

[0036] Figure 9 It shows that it is applied to Figure 8 A waveform diagram of the signal from the sensing electrode in an embodiment.

[0037] Figure 10 It is shown Figure 4 A schematic circuit diagram of an embodiment of the sensing unit.

[0038] Figure 11 This is a plan view showing the operation of the sensing unit.

[0039] Figure 12 and Figure 13 It is shown Figure 4 A schematic plan view of an embodiment of the sensing unit.

[0040] Figure 14 This is a schematic plan view showing a comparative example of a sensing unit included in a display device.

[0041] Figure 15 It is shown that it includes Figure 1 A schematic plan view of an embodiment of a sensing unit in a display device.

[0042] Figure 16 This is a block diagram of an electronic device according to an embodiment.

[0043] Figure 17 These are schematic diagrams of electronic devices according to various embodiments. Detailed Implementation

[0044] This disclosure can be modified and taken in various forms, and specific embodiments will be shown in the accompanying drawings and described in detail in the text. However, it will be understood that this disclosure is not intended to be limited to the specific forms disclosed, but is intended to cover all modifications, equivalents, and substitutions that fall within the spirit and scope of this disclosure.

[0045] The terms “first” or “second”, etc., may be used to describe various components, but these components should not be limited by these terms. The terms above are used only for the purpose of distinguishing one component from another. For example, without departing from the scope of this disclosure, a first component may be named a second component, and similarly, a second component may be named a first component. Unless the context explicitly requires otherwise, the singular forms “a,” “an,” and “the” include plural references.

[0046] The accompanying drawings depict several embodiments related to functional blocks, units, and / or modules. Those skilled in the art will appreciate that such blocks, units, and / or modules are physically implemented by logic circuits, discrete components, microprocessors, hardwired circuits, memory devices, wiring connections, and other electronic circuits. This can be formed using semiconductor-based manufacturing techniques or other manufacturing techniques. In the case of blocks, units, and / or modules implemented by microprocessors or other similar hardware, they can be programmed and controlled using software to perform the various functions discussed herein, and optionally driven by firmware and / or software. Furthermore, each block, unit, and / or module can be implemented by dedicated hardware, or can be implemented by a combination of dedicated hardware performing some functions and processors performing other functions (e.g., one or more programmed microprocessors and associated circuitry). Furthermore, without departing from the scope of the inventive concept, in some embodiments, blocks, units, and / or modules can be physically separated into two or more individual blocks, units, or modules that interact. Furthermore, without departing from the scope of this disclosure, in some embodiments, blocks, units, and / or modules can be physically combined into more complex blocks, units, or modules.

[0047] In this disclosure, the terms "comprising" or "having," etc., are intended to indicate the presence of features, quantities, steps, operations, components, parts, or combinations thereof described in the specification, and should not be construed as excluding the possibility of the presence or addition of one or more other features, quantities, steps, operations, components, parts, or combinations thereof. Furthermore, when a component such as a layer, film, region, plate, etc., is "on" another component, this includes not only the case where the component is "directly on" the other component, but also the case where other components are present in between. Additionally, in this specification, when a component such as a layer, film, region, or plate is formed on another component, the direction of formation is not limited to the upward direction, but includes the side surface or the downward direction. Conversely, if a component such as a layer, film, region, plate, etc., is "below" another component, this includes not only the case where the component is "directly below" the other component, but also the case where other components are present in between.

[0048] In the following description, a display device according to an embodiment of the present invention will be described with reference to the accompanying drawings relating to the embodiments of the present invention.

[0049] Reference Figures 1 to 5 A display device DD according to an embodiment is described.

[0050] Figure 1 This is a schematic diagram illustrating a display device DD according to an embodiment. Figure 2 It is shown that it includes Figure 1 A schematic plan view of an embodiment of the display unit DP in the display device DD. Figure 3It is shown that it includes Figure 1 A schematic plan view of an embodiment of the sensing unit TSP in a display device DD. Figure 4 It is shown Figure 3 A schematic plan view of an embodiment of the sensing unit TSP. Figure 5 It is shown Figure 1 A schematic cross-sectional view of the display device DD.

[0051] Reference Figures 1 to 5 The display device DD can provide (or emit) light. According to embodiments, the display device DD can be used in various devices, and the devices to which it can be applied are not limited to specific examples.

[0052] The display device DD may include a panel PNL and a driving circuit unit DV configured to drive the panel PNL.

[0053] The panel PNL may include a display unit DP (or display panel) configured to display an image and a sensing unit TSP (or sensing panel) configured to sense user input (e.g., touch input).

[0054] The display unit DP may include pixels PXL. The sensing unit TSP may include sensing electrodes SP (or a sensor).

[0055] The driving circuit unit DV may include a display driving unit DDV (or display driver (D-IC)) configured to drive the display unit DP and a sensor driving unit SDV (or touch driver (T-IC)) configured to drive the sensing unit TSP. The sensing unit TSP and the sensor driving unit SDV may form a sensing device.

[0056] According to an embodiment, the display unit DP may be referred to as a display layer or display panel. The sensing unit TSP may be referred to as a sensing layer, sensor panel, or touch sensor.

[0057] Pixel PXL can display an image in units of display frame cycles. Sensing electrodes SP can sense user input (e.g., touch input) in units of sensing frame cycles. According to embodiments, the sensing frame cycle and the display frame cycle can be independent of each other or can be different from each other. The sensing frame cycle and the display frame cycle can be synchronized or asynchronous with each other.

[0058] The sensing unit TSP, including the sensing electrodes SP, can obtain information about the user's touch input UTI (refer to...). Figure 6 Information about touch input (or touch events) can refer to information such as the location of the touch the user wants to provide.

[0059] The first substrate layer BS1 can be a substrate base or substrate member for supporting the display device DD. The first substrate layer BS1 can be a rigid substrate made of glass. Alternatively, the first substrate layer BS1 can be a flexible substrate. In this case, the substrate layer can include an insulating material such as a polymer resin, for example, polyimide. However, this disclosure is not particularly limited thereto.

[0060] The display device DD (or display unit DP) may include a display area DA and a non-display area NDA. The non-display area NDA may surround at least a portion of the display area DA. The non-display area NDA may be located at the periphery of the display area DA.

[0061] Pixel PXL, the scan lines and data lines electrically connected to pixel PXL can be set in the display area DA.

[0062] Pixel PXL can receive data signals from the data lines based on a scan signal at an on-level supplied from the scan lines, and emit light with a brightness corresponding to the data signal. Therefore, an image corresponding to the data signal is displayed in the display area DA.

[0063] Pixels PXL can be arranged in the display area DA according to various layout structures. For example, pixels PXL can be arranged according to stripes, (or conventional) Or diamonds Arrangement of the structure. However, this disclosure is not limited to the examples described above.

[0064] A pixel PXL can comprise two or more subpixels. Two or more subpixels can form a single pixel unit PXU capable of emitting light of various colors.

[0065] For example, a pixel PXL (or pixel unit PXU) may include a first sub-pixel SPX1, a second sub-pixel SPX2, and a third sub-pixel SPX3. Each of the first sub-pixels SPX1 through the third sub-pixel SPX3 may emit light of a single color. For example, the first sub-pixel SPX1 may be a red pixel emitting red (e.g., a first color) light, the second sub-pixel SPX2 may be a green pixel emitting green (e.g., a second color) light, and the third sub-pixel SPX3 may be a blue pixel emitting blue (e.g., a third color) light.

[0066] In another embodiment, pixel PXL may include four sub-pixels. For example, pixel PXL may be implemented as an RGBG type pixel unit PXU including one red pixel, one blue pixel, and two green pixels, or it may be implemented as an RGBW type pixel unit TXU including one red pixel, one blue pixel, one green pixel, and one white pixel. The number of sub-pixels included in pixel PXL and the color of light emitted by each sub-pixel are not particularly limited thereto.

[0067] In the non-display area NDA, various wiring and / or internal circuit units connected to the pixel PXL of the display area DA can be set up. For example, multiple wirings for supplying various power and control signals to the display area DA can be set up in the non-display area NDA.

[0068] The sensing unit TSP can acquire information about input provided by the user. The sensing unit TSP can be configured to recognize touch input.

[0069] The display device DD (or sensing unit TSP) may include a sensing area SA and a non-sensing area NSA (or boundary, unused space).

[0070] In this embodiment, the sensing area SA can be configured to overlap with at least one area of ​​the display area DA. For example, the sensing area SA can be configured as the area corresponding to the display area DA (e.g., the area overlapping with the display area DA), and the non-sensing area NSA can be configured as the area corresponding to the non-display area NDA (e.g., the area overlapping with the non-display area NDA). In this case, when touch input or the like is provided in the display area DA, the touch input can be detected by the sensing unit TSP.

[0071] The second substrate layer BS2 may include one or more insulating layers. For example, the insulating layer (e.g., an inorganic insulating layer) used to form the second substrate layer BS2 may be disposed (e.g., directly disposed) on the display unit DP (e.g., the encapsulation layer TFE) to form a substrate for forming the sensing electrode SP. However, examples for forming the second substrate layer BS2 are not particularly limited thereto.

[0072] The sensing area SA is an area that can respond to touch input (e.g., the active area of ​​a sensor). Therefore, sensing electrodes SP for sensing touch input, etc., can be disposed in the sensing area SA.

[0073] The sensing electrode SP can use the self-capacitance method to obtain information about the user's touch input UTI.

[0074] The sensing electrodes SP can be arranged in various structures within the sensing region SA. For example, the sensing electrodes SP can be arranged in a first direction DR1. The sensing electrodes SP can be arranged in a second direction DR2. The sensing electrodes SP can be arranged in a matrix form defined relative to the first direction DR1 and the second direction DR2. However, this disclosure is not limited thereto. For example, the sensing electrodes SP can be arranged in a circular shape, an elliptical shape, or an inclined shape.

[0075] In this embodiment, the first direction DR1 and the second direction DR2 can be different directions. The first direction DR1 and the second direction DR2 can be orthogonal to each other. However, this disclosure is not limited to this. For example, the first direction DR1 and the second direction DR2 can extend in an inclined direction.

[0076] In embodiments, the sensing electrode SP can have various shapes. For example, the sensing electrode SP can have various shapes such as square, triangle, circle, ellipse or grid shape.

[0077] In embodiments, the sensing electrode SP may include a conductive material. For example, the sensing electrode SP may have conductivity by comprising at least one of metallic materials, transparent conductive materials, and various other conductive materials. For example, the sensing electrode SP may include at least one of various metallic materials or alloys thereof, including gold (Au), silver (Ag), aluminum (Al), molybdenum (Mo), chromium (Cr), titanium (Ti), nickel (Ni), neodymium (Nd), copper (Cu), and platinum (Pt). The sensing electrode SP may include at least one of various transparent conductive materials, including silver nanowires (AgNW), indium tin oxide (ITO), indium zinc oxide (IZO), indium gallium zinc oxide (IGZO), zinc aluminum oxide (AZO), indium tin zinc oxide (ITZO), zinc oxide (ZnO), tin oxide (SnO2), carbon nanotubes, or graphene. The sensing electrode SP may comprise a single layer or multiple layers, and the cross-sectional structure of the sensing electrode SP is not particularly limited.

[0078] The panel PNL may include a pad area PDA. The panel PNL may include display pads DPD and touch sensing pads TPD disposed in the pad area PDA.

[0079] Display pads DPD can be electrically connected to pixels PXL in display area DA via wiring. Display pads DPD can also be electrically connected to display driving units DDV formed (e.g., included) in driving circuit units DV. For example, electrical signals provided by display driving units DDV can be applied to pixels PXL via display pads DPD.

[0080] The touch sensing pad (TPD) can be electrically connected to the sensing electrode SP via wiring and a multiplexer (MUX). The touch sensing pad (TPD) can be electrically connected to the sensor driving unit (SDV) formed (e.g., included) in the driving circuit unit (DV). For example, an electrical signal provided by the sensor driving unit (SDV) can be applied to the sensing electrode SP via the touch sensing pad (TPD).

[0081] The drive circuit unit (DV) may include a flexible circuit board. The drive circuit unit (DV) may be implemented as an integrated circuit (IC).

[0082] The driving circuit unit DV may include a display driving unit DDV and a sensor driving unit SDV. The driving circuit unit DV may be formed on the rear surface of the first substrate layer BS1.

[0083] The display driving unit (DDV) can be electrically connected to the display unit (DP) and can be configured to drive the display unit (DP). The display driving unit (DDV) is formed on the rear surface of the first substrate layer (BS1) and can be electrically connected to the pixel (PXL) via the display pad (DPD). The display driving unit (DDV) may include a data driving unit, a timing control unit, or a scan driving unit, etc.

[0084] The sensor driving unit SDV can be electrically connected to the sensing unit TSP and can be configured to drive the sensing unit TSP. The sensor driving unit SDV can be formed on the rear surface of the first substrate layer BS1 and can be electrically connected to the sensing electrode SP via the touch sensing pad TPD.

[0085] Reference Figure 4 The sensing unit TSP may also include sensing lines SL (or sensor lines) and signal lines SGL. Sensing lines SL can be electrically connected one-to-one to sensing electrodes SP. A single sensing line SL can electrically connect the sensing electrodes SP in the sensing area SA to the multiplexer MUX. The signal line SGL can electrically connect the multiplexer MUX and the touch sensing pad TPD. Therefore, the drive signal provided by the sensor driving unit SDV can be applied to the sensing electrodes SP through the signal line SGL, the multiplexer MUX, and the sensing line SL.

[0086] The panel PNL (e.g., the sensing unit TSP) may include a multiplexer MUX. The multiplexer MUX is located in the non-sensing area NSA and may be electrically connected between the sensing line SL (or sensing electrode SP) and the touch sensing pad TPD. The multiplexer MUX may selectively connect the sensing line SL to the touch sensing pad TPD. Electrical signals provided by the touch sensing pad TPD (e.g., drive signals provided by the sensor driving unit SDV) may be applied to the sensing electrode SP via the multiplexer MUX.

[0087] The multiplexer MUX may include a first multiplexer MUX1 and a second multiplexer MUX2.

[0088] The first multiplexer MUX1 is electrically connected between the sensing line SL and the connection line CL, and the second multiplexer MUX2 can be electrically connected between the connection line CL and the signal line SGL connected to the touch sensing pad TPD. The first multiplexer MUX1 and the second multiplexer MUX2 can be interconnected via the connection line CL. (See below for further details.) Figure 7 Describe the configuration of the first multiplexer MUX1 and the second multiplexer MUX2.

[0089] In some embodiments, the first multiplexer MUX1 may include a first sub-multiplexer MUX_S1 and a second sub-multiplexer MUX_S2.

[0090] The first sub-multiplexer MUX_S1 can be disposed on one side of the sensing area SA, and the second sub-multiplexer MUX_S2 can be disposed on the other side of the sensing area SA. The first sub-multiplexer MUX_S1 and the second sub-multiplexer MUX_S2 can be spaced apart from each other in the first direction DR1, and the sensing area SA is located between the first sub-multiplexer MUX_S1 and the second sub-multiplexer MUX_S2. For example, as... Figure 4 As shown, the first sub-multiplexer MUX_S1 can be positioned to the left of the sensing area SA, and the second sub-multiplexer MUX_S2 can be positioned to the right of the sensing area SA. Furthermore, the first sub-multiplexer MUX_S1 and the second sub-multiplexer MUX_S2 can be spaced apart from each other in the second direction DR2. For example, as... Figure 4 As shown, for the boundary between the first region A1 and the second region A2, the first sub-multiplexer MUX_S1 can be positioned above the boundary, and the second sub-multiplexer MUX_S2 can be positioned below the boundary. Although the first sub-multiplexer MUX_S1 and the second sub-multiplexer MUX_S2 are shown as spaced apart from each other in the left-right direction and / or up-down direction, the inventive concept is not limited thereto.

[0091] The second multiplexer MUX2 and the touch sensing pad TPD can be positioned relative to the sensing area SA along the second direction DR2, for example, positioned below the sensing area SA. As will be described later, since the first sub-multiplexer MUX_S1, the second sub-multiplexer MUX_S2, and the second multiplexer MUX2 are positioned in mutually different directions of the sensing area SA, the width (or average width) of the non-sensing area NSA can be reduced compared to the case where the multiplexer MUX is positioned on one side of the sensing area SA. For example, the width of the non-sensing area NSA located below the sensing area SA in the second direction DR2 can be 5 mm or less (or can be reduced to 5 mm or less). In other words, when the area of ​​the sensing unit TSP is limited, a sensing area SA with a larger width (or length, area) can be provided by a reduced width of the non-sensing area NSA.

[0092] The sensing region SA may include a first region A1 and a second region A2 disposed along the second direction DR2. A first sub-multiplexer MUX_S1 may be electrically connected to a sensing electrode SP (or sensing line SL) in the first region A1, and a second sub-multiplexer MUX_S2 may be electrically connected to a sensing electrode SP (or sensing line SL) in the second region A2. The first sub-multiplexer MUX_S1 may not be connected to the sensing electrode SP in the second region A2 or may be electrically disconnected from the sensing electrode SP in the second region A2, and the second sub-multiplexer MUX_S2 may not be connected to the sensing electrode SP in the first region A1 or may be electrically disconnected from the sensing electrode SP in the first region A1.

[0093] For the first sensor column COL1 or the second sensor column COL2 including sensing electrodes SP arranged (or set) on the second direction DR2, a portion of the sensing electrodes SP (i.e., the sensing electrodes SP located in the first region A1) can be electrically connected to the first sub-multiplexer MUX_S1, and the remaining sensing electrodes SP (i.e., the sensing electrodes SP located in the second region A2) can be electrically connected to the second sub-multiplexer MUX_S2. The number of a portion of the sensing electrodes SP (or the number of sensing electrodes SP located in the first region A1) and the number of the remaining sensing electrodes SP (or the number of sensing electrodes SP located in the second region A2) can be the same, but are not limited thereto.

[0094] Since the first sub-multiplexer MUX_S1 is electrically connected to the sensing electrode SP (or sensing line SL) in the first region A1, it can be located on one side of the first region A1 (e.g., the left side). The second sub-multiplexer MUX_S2 is electrically connected to the sensing electrode SP (or sensing line SL) in the second region A2, and therefore can be located on the other side of the second region A2 (e.g., the right side). The first sub-multiplexer MUX_S1 may not be located on one side of the second region A2, and the second sub-multiplexer MUX_S2 may not be located on the other side of the first region A1. However, it is not limited to this. For example, the first sub-multiplexer MUX_S1 may be located on one side of the second region A2 (e.g., the left side), instead of one side of the first region A1 (e.g., the left side).

[0095] Reference Figure 5 The display unit DP may include a first substrate layer BS1 and a circuit layer CIL, a light-emitting element layer LEL, and a packaging layer TFE disposed on the first substrate layer BS1. The third direction DR3 may be a direction perpendicular to the first direction DR1 and the second direction DR2.

[0096] The circuit layer CIL can span the display area DA and the non-display area NDA, and can be disposed on the first substrate layer BS1. The circuit layer CIL can drive the pixel PXL and can include pixel circuitry electrically connected to the light-emitting element. The circuit layer CIL can include multiplexer transistors forming the multiplexer MUX (see reference). Figure 7 ).

[0097] The light-emitting element layer (LEL) can be disposed on the circuit layer (CIL) in the display area (DA). The LEL can include light-emitting elements that emit light. The light-emitting elements can include organic light-emitting diodes (OLEDs) containing organic materials, or inorganic light-emitting diodes (e.g., micro light-emitting diodes (LEDs) containing inorganic materials). However, this disclosure is not limited thereto.

[0098] The encapsulation layer TFE can cover the light-emitting element layer LEL. At least a portion of the encapsulation layer TFE can be disposed in the display area DA. The encapsulation layer TFE can encapsulate the light-emitting element layer LEL.

[0099] The sensing unit TSP can be positioned across the sensing area SA and the non-sensing area NSA. At least a portion of the sensing unit TSP can be positioned (e.g., directly positioned) on the encapsulation layer TFE.

[0100] In one embodiment, the sensing unit TSP can be formed on a separate substrate and then disposed on the encapsulation layer TFE, without being combined with the display unit DP. Therefore, the manufacturing process of the display device DD can be simplified.

[0101] Figure 6 It is shown that Figure 1 A schematic diagram of the operation of the display device DD detecting touch input.

[0102] Reference Figure 6 The sensor driver unit (SDV) can obtain information about the user's touch input (UTI) using a self-capacitance method. In an embodiment, Figure 1 The panel PNL (or sensing unit TSP) may include a capacitive electrode CE. In an embodiment, the capacitive electrode CE may be... Figure 1 At least one of the electrodes of the display unit DP. For example, the capacitor electrode CE can be the cathode electrode of the light-emitting element. However, the capacitor electrode CE is not limited to this.

[0103] In this embodiment, the sensor driving unit SDV can charge and release the sensing electrode SP via the signal line SGL, the multiplexer MUX, and the sensing line SL, and can detect changes in the capacitance of the sensing electrode SP to obtain information about the user touch input UTI. The information about the user touch input UTI may include the location of the user touch input UTI or its presence or absence.

[0104] For example, a reference voltage (or drive signal) provided by the sensor driving unit SDV can be applied to the sensing electrode SP. When a user touch input UTI is applied, a self-capacitance Csf can be formed between the sensing electrode SP and the capacitor electrode CE. The reference voltage can be changed to voltage information (or sensing signal) with a waveform altered by the self-capacitance Csf. The sensor driving unit SDV can receive the changed voltage information and analyze it to determine the location of the user touch input UTI or its presence or absence.

[0105] Reference Figures 7 to 9 Describe the operation of the multiplexer MUX and the display device DD (or sensing device). For ease of description, any content that may overlap with the foregoing will be briefly described or will not be repeated.

[0106] Figure 7 It is shown that it includes Figure 4 A schematic circuit diagram of an embodiment of the multiplexer MUX in the sensing unit TSP. Figure 8 This is a plan view showing the operation of the sensing device. Figure 9 It shows that it is applied to Figure 8 A waveform diagram of an embodiment of the signal from the sensing electrode SP.

[0107] Reference Figure 7The multiplexer MUX can selectively connect the sensing line SL (or sensing electrode SP) to the signal line SGL (or touch sensing pad TPD), the first drive line DRL1, or the second drive line DRL2. The target pulse signal can be received from... Figure 6 The sensor driving unit SDV shown in the diagram applies to the signal line SGL, the first driving signal DR_NP can be applied to the first driving line DRL1, and the second driving signal DR_BP can be applied to the second driving line DRL2.

[0108] A multiplexer MUX may include multiple multiplexer transistors MT1 to MT4 (or transistors). For example, a first multiplexer MUX may include a first multiplexer transistor MT1 (or a first transistor) and a second multiplexer transistor MT2 (or a second transistor), and a second multiplexer MUX2 may include a third multiplexer transistor MT3 (or a third transistor) and a fourth multiplexer transistor MT4 (or a fourth transistor).

[0109] The first electrode of the first multiplexer transistor MT1 can be electrically connected to the sensing line SL, the second electrode of the first multiplexer transistor MT1 can be electrically connected to the first drive line DRL1, and the gate electrode of the first multiplexer transistor MT1 can be electrically connected to the first multiplexer gate line MGL1 (or the first gate line). When the first gate signal MC_NP is applied from the first multiplexer gate line MGL1 to electrically connect the sensing line SL and the first drive line DRL1, the first multiplexer transistor MT1 can be turned on.

[0110] The first electrode of the second multiplexer transistor MT2 can be electrically connected to the sensing line SL, the second electrode of the second multiplexer transistor MT2 can be electrically connected to the connection line CL, and the gate electrode of the second multiplexer transistor MT2 can be electrically connected to the second multiplexer gate line MGL2 (or the second gate line). When the second gate signal MC_SP is applied from the second multiplexer gate line MGL2 to electrically connect the sensing line SL and the connection line CL, the second multiplexer transistor MT2 can be turned on.

[0111] The first electrode of the third multiplexer transistor MT3 can be electrically connected to the connection line CL, the second electrode of the third multiplexer transistor MT3 can be electrically connected to the signal line SGL, and the gate electrode of the third multiplexer transistor MT3 can be electrically connected to the third multiplexer gate line MGL3 (or the third gate line). When the third gate signal MC_S is applied from the third multiplexer gate line MGL3 to electrically connect the connection line CL and the signal line SGL, the third multiplexer transistor MT3 can be turned on.

[0112] The first electrode of the fourth multiplexer transistor MT4 can be electrically connected to the connection line CL, the second electrode of the fourth multiplexer transistor MT4 can be electrically connected to the second drive line DRL2, and the gate electrode of the fourth multiplexer transistor MT4 can be electrically connected to the fourth multiplexer gate line MGL4 (or the fourth gate line). When the fourth gate signal MC_B is applied from the fourth multiplexer gate line MGL4 to electrically connect the connection line CL and the second drive line DRL2, the fourth multiplexer transistor MT4 can be turned on.

[0113] When the second multiplexer transistor MT2 and the third multiplexer transistor MT3 are turned on, the sensing line SL (or sensing electrode SP) can be electrically connected to the signal line SGL (or touch sensing pad TPD).

[0114] When the second multiplexer transistor MT2 and the fourth multiplexer transistor MT4 are turned on, the sensing line SL (or sensing electrode SP) can be electrically connected to the second drive line DRL2, and the second drive signal DR_BP can be applied to the sensing electrode SP.

[0115] When the first multiplexer transistor MT1 is turned on, the sensing line SL (or sensing electrode SP) can be electrically connected to the first drive line DRL1, and the first drive signal DR_NP can be applied to the sensing electrode SP.

[0116] The target pulse signal can be used to sense the sensing electrode SP (or the target sensing electrode TP) which is electrically connected to the sensing line SL. Figure 8 User touch input UTI at the location (refer to) Figure 6 The first drive signal DR_NP can be applied to the corresponding sensing electrode SP (or non-sensing electrode NP) when no user touch input UTI is sensed at or around the location where the sensing electrode SP is electrically connected to the sensing line SL. Figure 8 The second drive signal DR_BP can be used when another sensing electrode SP (or an adjacent sensing electrode BP) is used in a region adjacent to the location of the sensing electrode SP that is electrically connected to the sensing line SL. Figure 8 )) Sensing auxiliary signals that determine information about user touch input UTI when sensing user touch input UTI.

[0117] Reference Figure 8 For the first sensor column COL1 included in the display device DD (or sensing unit TSP), the sensing electrode located in the fourth row ROW4 can be selected to be connected to the sensor driving unit SDV (see reference). Figure 6The target sensing electrode TP. In this case, the sensing electrode located in the row adjacent to the fourth row ROW4 can be an adjacent sensing electrode BP. For example, the sensing electrodes located in the second row ROW2, the third row ROW3, ​​the fifth row ROW5, and the sixth row ROW6 can be selected as adjacent sensing electrodes BP. At least one of the remaining sensing electrodes other than those located in the second row ROW2 to the sixth row ROW6 can be a non-sensing electrode NP. For example, the sensing electrodes located in the first row ROW1, the seventh row ROW7, and / or the eighth row ROW8 can be selected as non-sensing electrodes NP, but are not limited thereto.

[0118] Reference Figure 8 And combined Figure 7 For example, the first multiplexer MUX1 and the second multiplexer MUX2 can electrically connect the sensing electrodes in the fourth row ROW4 to the touch sensing pad TPD. The second multiplexer MUX2 can electrically connect the sensing electrodes in the second row ROW2, the third row ROW3, ​​the fifth row ROW5 and the sixth row ROW6 to the second drive line DRL2. The first multiplexer MUX1 can electrically connect the sensing electrodes in the first row ROW1, the seventh row ROW7 and / or the eighth row ROW8 to the first drive line DRL1.

[0119] Reference Figures 6 to 9 The target pulse signal TPS can be applied from the sensor driving unit SDV to the target sensing electrode TP. A first pulse signal PS1 can be applied to the adjacent sensing electrode BP. The first pulse signal PS1 can be the second driving signal DR_BP of the second driving line DRL2. A second pulse signal PS2 can be applied to the non-sensing electrode NP. The second pulse signal PS2 can be the first driving signal DR_NP of the first driving line DRL1. The first pulse signal PS1 can have the same phase as the target pulse signal TPS, and the second pulse signal PS2 can have the opposite phase to the target pulse signal TPS.

[0120] At the first time point T1, the target pulse signal TPS applied to the target sensing electrode TP can change from the first target voltage level TV1 to the second target voltage level TV2.

[0121] Between the second time point T2 and the third time point T3, the target pulse signal TPS can gradually decrease from the second target voltage level TV2 to the first target voltage level TV1. The slope of the voltage level of the target pulse signal TPS can change according to the user's touch. For example, when the user's touch is not adjacent to the target sensing electrode TP, the voltage level of the target pulse signal TPS can have a first slope S1. On the other hand, when the user's touch is adjacent to the target sensing electrode TP, the voltage level of the target pulse signal TPS can have a second slope S2. The sensor driving unit SDV (or processor) can sense the user's touch based on whether the target pulse signal TPS has the first slope S1 or the second slope S2.

[0122] At the first time point T1, the first pulse signal PS1 applied to the adjacent sensing electrode BP can transition from a first voltage level V1 to a second voltage level V2. Simultaneously, the second pulse signal PS2 applied to the non-sensing electrode NP can transition from the second voltage level V2 to the first voltage level V1.

[0123] At the second time point T2, the first pulse signal PS1 can transition from the second voltage level V2 to the first voltage level V1. Simultaneously, the second pulse signal PS2 can transition from the first voltage level V1 to the second voltage level V2.

[0124] Furthermore, at the third time point T3, the first pulse signal PS1 can again transition from the first voltage level V1 to the second voltage level V2. Simultaneously, the second pulse signal PS2 can again transition from the second voltage level V2 back to the first voltage level V1.

[0125] The time between the first time point T1 and the third time point T3 can be defined as a first cycle CYCL1. The operations at the third time point T3, the fourth time point T4, and the fifth time point T5 can be described in the same manner as the operations at the first time point T1, the second time point T2, and the third time point T3, respectively. At the fifth time point T5, the sensing cycle SS for the target sensing electrode TP ends, and the period between the third time point T3 and the fifth time point T5 can be defined as a second cycle CYCL2 following the first cycle CYCL1. In this way, the sensing cycle SS can include one or more cycles CYCL1 and CYCL2, enabling the sensing of a user's touch through the target sensing electrode TP.

[0126] The first pulse signal PS1 applied to the adjacent sensing electrode BP can have the form of multiple repeated square waves during the sensing period SS, and the second pulse signal PS2 applied to the non-sensing electrode NP can have the form of multiple repeated square waves with a phase opposite to that of the first pulse signal PS1. The first pulse signal PS1 and the second pulse signal PS2 can have the same frequency as the target pulse signal TPS. When the second pulse signal PS2 is applied to the non-sensing electrode NP, the electromagnetic interference (EMI) caused by the first pulse signal PS1 can be reduced and the touch performance can be improved.

[0127] Figure 10 It is shown Figure 4 A schematic circuit diagram of an embodiment of the sensing unit TSP. Figure 11 This is a plan view showing the operation of the sensing unit TSP.

[0128] Reference Figure 4 , Figure 7 and Figure 10 Since the first sub-multiplexer MUX_S1 and the second sub-multiplexer MUX_S2 have substantially the same or similar circuit configurations, the sensing unit TSP will be described with focus on the first sub-multiplexer MUX_S1 and the sensing electrode SP located in the first region A1 connected to the first sub-multiplexer MUX_S1. Furthermore, for ease of description, any content that may overlap with the foregoing will be briefly described or will not be repeated.

[0129] The first region A1 (or the second region A2) may include sensing electrodes SP in n rows, for example, sensing electrodes SP in the first row ROW1 to the nth row ROWn. Therefore, each of the first sensor column COL1 and the second sensor column COL2 may include n sensing electrodes SP, where n is a positive integer greater than 1.

[0130] The circuit configuration of the first sensor column COL1 will be described first, and the circuit configuration of the second sensor column COL2 will be described later.

[0131] k sensing electrodes SP can form a block, where k is a positive integer less than n. For example, the first block BLK1 can include sensing electrodes SP located in the first row ROW1 to the kth row ROWk. The xth block BLKx can include sensing electrodes SP located in the (nk-1)th row ROWn-k-1 to the nth row ROWn, where x is a positive integer. That is, k sensing electrodes SP can be divided into x blocks BLK1 to BLKx.

[0132] A first multiplexer transistor MT1 is provided to correspond to each of rows ROW1 to ROWn, and the sensing electrode SP of the corresponding row can be electrically connected to the corresponding first drive line DLR1 in response to a signal of the corresponding first multiplexer gate line MGL1. For example, the first multiplexer transistor MT1 can electrically connect the sensing electrode SP of the first row ROW1 to the eleventh drive line DLR11 in response to a signal of the eleventh multiplexer gate line MGL11. For example, the first multiplexer transistor MT1 can electrically connect the sensing electrode SP of the first row ROWn to the 1n drive line DLR1n in response to a signal of the 1k multiplexer gate line MGL1k. Multiple first drive lines DRL11 to DRL1n can be provided to correspond to rows ROW1 to ROWn, such that the first drive signal DR_NP applied from the first drive line DRL1 to the rows ROW1 to ROWn is not affected by the cutoff of the multiple first multiplexer transistors MT1. For example, 24 first drive lines DRL11 to DRL1n can be provided to correspond to 24 rows ROW1 to ROWn (i.e., where n is 24).

[0133] A second multiplexer transistor MT2 is provided to correspond to each of the rows ROW1 to ROWn, and the sensing electrode SP of the corresponding row can be electrically connected to the corresponding connection line CL in response to a signal from the corresponding second multiplexer gate line MGL2. For example, the second multiplexer transistor MT2 can electrically connect the sensing electrode SP of the first row ROW1 to the first connection line CL1 in response to a signal from the 21st multiplexer gate line MGL21. For example, the second multiplexer transistor MT2 can electrically connect the sensing electrode SP of the nth row ROWn to the xth connection line CLx in response to a signal from the 2kth multiplexer gate line MGL2k.

[0134] The first multiplexer MUX1 (or the first sub-multiplexer MUX_S1), which includes the first multiplexer transistor MT1 and the second multiplexer transistor MT2, can electrically connect n sensing electrodes SP to x connection lines CL. That is, the first multiplexer MUX1 (or the first sub-multiplexer MUX_S1) can be an n / x:1 multiplexer.

[0135] A third multiplexer transistor MT3 is provided to correspond to each of the connection lines CL1 to CLx, and can electrically connect connection lines CL1 to CLx to signal line SGL in response to a signal of the corresponding third odd-numbered multiplexer gate line MGL_O3. The third odd-numbered multiplexer gate line MGL_O3 can be the third multiplexer gate line MGL3 for the first sensor column COL1 or the odd-numbered sensor column COL_ODD. For example, the third multiplexer transistor MT3 can electrically connect the first connection line CL1 to signal line SGL in response to a signal of the 31st odd-numbered multiplexer gate line MGL_O31. For example, the third multiplexer transistor MT3 can electrically connect the xth connection line CLx to signal line SGL in response to a signal of the 3xth odd-numbered multiplexer gate line MGL_O3x.

[0136] A fourth multiplexer transistor MT4 is provided to correspond to each of the connection lines CL1 to CLx, and the connection lines CL1 to CLx can be electrically connected to the second drive line DRL2 in response to the signal of the corresponding fourth odd-numbered multiplexer gate line MGL_O4. The odd-numbered multiplexer gate line MGL_O4 can be the fourth multiplexer gate line MGL4 for the first sensor column COL1 or the odd-numbered sensor column COL_ODD. For example, the fourth multiplexer transistor MT4 can electrically connect the first connection line CL1 to the 21st drive line DRL21 in response to the signal of the 41st odd-numbered multiplexer gate line MGL_O41. For example, the fourth multiplexer transistor MT4 can electrically connect the xth connection line CLx to the 2xth drive line DRL2x in response to the signal of the 4xth odd-numbered multiplexer gate line MGL_O4x. Similar to the first drive lines DRL11 to DRL1n, the second drive lines DRL21 to DRL2x can be provided to correspond to the connecting lines CL1 to CLx respectively.

[0137] The number and connection configuration of the first multiplexer transistor MT1 and the second multiplexer transistor MT2 in the second sensor column COL2 can be substantially the same as those of the first multiplexer transistor MT1 and the second multiplexer transistor MT2 in the first sensor column COL1.

[0138] In the second sensor column COL2, a third multiplexer transistor MT3 is provided to correspond to each of the connection lines CL1 to CLx, and the connection lines CL1 to CLx can be electrically connected to the signal line SGL in response to the signal of the corresponding third even-numbered multiplexer gate line MGL_E3. The third even-numbered multiplexer gate line MGL_E3 can be the third multiplexer gate line MGL3 for the second sensor column COL2 or the even-numbered sensor column COL_EVEN. For example, the third multiplexer transistor MT3 can electrically connect the first connection line CL1 to the signal line SGL in response to the signal of the 31st even-numbered multiplexer gate line MGL_E31. For example, the third multiplexer transistor MT3 can electrically connect the xth connection line CLx to the signal line SGL in response to the signal of the 3xth even-numbered multiplexer gate line MGL_E3x.

[0139] In the second sensor column COL2, a fourth multiplexer transistor MT4 is provided to correspond to each of the connection lines CL1 to CLx, and the connection lines CL1 to CLx can be electrically connected to the second drive line DRL2 in response to a signal from the corresponding fourth even-numbered multiplexer gate line MGL_E4. The fourth even-numbered multiplexer gate line MGL_E4 can be the fourth multiplexer gate line MGL4 for the second sensor column COL2 or the even-numbered sensor column COL_EVEN. For example, the fourth multiplexer transistor MT4 can electrically connect the first connection line CL1 to the 21st drive line DRL21 in response to a signal from the 41st even-numbered multiplexer gate line MGL_E41. For example, the fourth multiplexer transistor MT4 can electrically connect the xth connection line CLx to the 2x drive line DRL2x in response to a signal from the 4xth even-numbered multiplexer gate line MGL_E4x.

[0140] The second multiplexer MUX2, including the third multiplexer transistor MT3 and the fourth multiplexer transistor MT4, can electrically connect the x connection lines CL of the first sensor column COL1 and the x connection lines CL of the second sensor column COL2 to the signal line SGL. In other words, the second multiplexer MUX2 can be a 2x:1 multiplexer.

[0141] The multiplexer MUX can selectively connect the sensing electrodes SP in the first sensor column COL1 and the second sensor column COL2 to the signal line SGL (or the touch sensing pad TPD).

[0142] To reduce the number of touch sensing pads (TPDs) connected to signal line SGL, the multiplexer (MUX) is configured such that the first sensor column COL1 and the second sensor column COL2 are connected to a single signal line SGL; however, the inventive concept is not limited thereto. For example, the multiplexer (MUX) can be configured such that the first sensor column COL1 and the second sensor column COL2 are each connected to two separate signal lines SGL.

[0143] In an embodiment, the multiplexer MUX can alternately select blocks of the first sensor column COL1 and the second sensor column COL1, and sequentially connect the sensing electrodes SP in the blocks to the touch sensing pads TPD.

[0144] Reference Figure 11 The first row ROW1, the second row ROW2, the third row ROW3, ​​and the fourth row ROW4 can be set as the first block, and the fifth row ROW5, the sixth row ROW6, the seventh row ROW7, and the eighth row ROW8 can be set as the second block.

[0145] First, the first block of the first sensor column COL1 can be selected. For example, connected to... Figure 10 The third multiplexer transistor MT3 of the first connection line CL1 in the first sensor column COL1 can be turned on. Furthermore, the sensing electrodes SP of the first row ROW1, second row ROW2, third row ROW3, ​​and fourth row ROW4 of the first sensor column COL1 (see reference) Figure 4 ) can be sequentially selected as target sensing electrodes (e.g., Figure 8 The target sensing electrode TP in the middle. For example, connected to Figure 10 The first multiplexer transistor MT1 of the first drive line DRL1 in the first sensor column COL1 can be turned on sequentially from right to left.

[0146] After this, the first block of the second sensor column COL2 can be selected. For example, connected to... Figure 10 The third multiplexer transistor MT3 of the first connection line CL1 in the second sensor column COL2 can be turned on. Furthermore, the sensing electrodes SP of the first row ROW1, second row ROW2, third row ROW3, ​​and fourth row ROW4 of the second sensor column COL2 can be sequentially selected as target sensing electrodes. For example, connected to... Figure 10 The first multiplexer transistor MT1 of the first drive line DRL1 in the second sensor column COL2 can be turned on sequentially from right to left.

[0147] After this, the second block of the first sensor column COL1 can be selected. For example, connected to... Figure 10The third multiplexer transistor MT3 of the xth connection line CLx in the first sensor column COL1 can be turned on. Furthermore, the sensing electrodes SP of the fifth row ROW5, sixth row ROW6, seventh row ROW7, and eighth row ROW8 of the first sensor column COL1 can be sequentially selected as target sensing electrodes. For example, connected to... Figure 10 The first multiplexer transistor MT1 of the xth drive line DRLn in the first sensor column COL1 can be turned on sequentially from right to left.

[0148] After this, the second block of the second sensor column COL2 can be selected. For example, connected to... Figure 10 The third multiplexer transistor MT3 of the x-th connection line CLx in the second sensor column COL2 can be turned on. Furthermore, the sensing electrodes SP of the fifth row ROW5, sixth row ROW6, seventh row ROW7, and eighth row ROW8 of the second sensor column COL2 can be sequentially selected as target sensing electrodes. For example, connected to... Figure 10 The first multiplexer transistor MT1 of the xth drive line DRLx in the second sensor column COL2 can be turned on sequentially from right to left.

[0149] However, according to Figure 11 The operation of the sensing unit TSP (or display device DD) in the embodiment is exemplary, and the operation of the sensing unit TSP is not limited thereto. For example, the sensing unit TSP may select the sensing electrode SP of the second sensor column COL2 after selecting all the sensing electrodes SP of the first sensor column COL1. The sensing unit TSP may sequentially select the sensing electrodes SP of the two sensor columns COL1 and COL2 in various orders (or methods).

[0150] Figure 12 and Figure 13 It is shown Figure 4 A schematic plan view of an embodiment of the sensing unit TSP.

[0151] Reference Figure 4 and Figure 12 And combined Figure 10 In addition to the wiring in the multiplexer (MUX), Figure 12 The sensing unit TSP (or display device DD) can be connected with Figure 4 The sensing unit TSP is basically the same. Therefore, the already repeated description will not be repeated.

[0152] The first wiring can be arranged in the area where the first sub-multiplexer MUX_S1 is arranged. The first wiring may include a first drive line DRL1, a first multiplexer gate line MGL1, and a second multiplexer gate line MGL2. (See reference...) Figure 10As described, the first drive line DRL1 may include first drive lines DRL11 to DRL1n, the first multiplexer gate line MGL1 may include first multiplexer gate lines MGL11 to MGL1k, and the second multiplexer gate line MGL2 may include second multiplexer gate lines MGL21 to MGL2k. As described above, for either the first sensor column COL1 or the second sensor column COL2, the number of first drive lines DRL11 to DRL1n connected to the first sub-multiplexer MUX_S1 can be equal to the number of sensing electrodes SP arranged in the first region A1. (Refer to...) Figure 10 The first multiplexer transistor MT1 and the second multiplexer transistor MT2 described herein can be set in the area where the first sub-multiplexer MUX_S1 is set.

[0153] In an embodiment, in the region where the first sub-multiplexer MUX_S1 is disposed, the first drive line DRL1, the first multiplexer gate line MGL1, and the second multiplexer gate line MGL2 are disposed on a first direction DR1, and each of the first drive line DRL1, the first multiplexer gate line MGL1, and the second multiplexer gate line MGL2 can extend on a second direction DR2. For example, each of the first drive line DRL1, the first multiplexer gate line MGL1, and the second multiplexer gate line MGL2 extends along one side of the sensing region SA and can be connected to the PDA disposed in the pad region (see reference). Figure 3 The pads in the sensor area can be connected to internal circuitry provided in the non-sensing area of ​​the NSA.

[0154] Similar to the first wiring of the first sub-multiplexer MUX_S1, the second wiring can also be arranged in the region where the second sub-multiplexer MUX_S2 is arranged. The second wiring may include a first drive line DRL1, a first multiplexer gate line MGL1, and a second multiplexer gate line MGL2. The second wiring connected to the second sub-multiplexer MUX_S2 is used to drive the sensing electrode SP in the second region A2, and the first wiring connected to the first sub-multiplexer MUX_S1 is used to drive the sensing electrode SP in the first region A1. The second wiring connected to the second sub-multiplexer MUX_S2 can be provided separately from the first wiring coupled to the first sub-multiplexer MUX_S1. For example, the second wire connected to the second sub-multiplexer MUX_S2 and the first wire connected to the first sub-multiplexer MUX_S1 can be electrically isolated.

[0155] For the entire sensing area SA, some of the wiring connected to the first multiplexer MUX1 (i.e., the first wiring among the first and second wirings connected to the first sub-multiplexer MUX_S1) can be located on one side of the sensing area SA, and the remaining wiring connected to the first multiplexer MUX1 can be located on the other side of the sensing area SA (i.e., the second wiring connected to the second sub-multiplexer MUX_S2). Therefore, compared to the case where all wiring connected to the first multiplexer MUX1 is located on one side of the sensing area SA, the width (or area) of the non-sensing area NSA located on one side of the sensing area SA in the first direction DR1 can be reduced.

[0156] Wiring can be arranged in the area where the second multiplexer MUX2 is located. Wiring may include the third multiplexer gate line MGL3, the fourth multiplexer gate line MGL4, and the second drive line DRL2. See reference... Figure 10 As described, the third multiplexer gate line MGL3 may include third odd-numbered multiplexer gate lines MGL_O31 to MGL_O3x and third even-numbered multiplexer gate lines MGL_E31 to MGL_E3x, the fourth multiplexer gate line MGL4 may include fourth odd-numbered multiplexer gate lines MGL_O41 to MGL_O4x and fourth even-numbered multiplexer gate lines MGL_E41 to MGL_E4x, and the second drive line DRL2 may include second drive lines DRL21 to DRL2x.

[0157] The wiring (e.g., the third wiring) of the second multiplexer MUX2 for the first sub-multiplexer MUX_S1 can be arranged adjacent to one side of the sensing area SA, and the wiring (e.g., the fourth wiring) of the second multiplexer MUX2 for the second sub-multiplexer MUX_S2 can be arranged adjacent to the other side of the sensing area SA.

[0158] In an embodiment, in the region where the second multiplexer MUX2 is disposed, the third multiplexer gate line MGL3, the fourth multiplexer gate line MGL4, and the second drive line DRL2 are arranged on a first direction DR1, and each of the third multiplexer gate line MGL3, the fourth multiplexer gate line MGL4, and the second drive line DRL2 can extend on a second direction DR2. For example, each of the third multiplexer gate line MGL3, the fourth multiplexer gate line MGL4, and the second drive line DRL2 extends in a direction perpendicular to the lower side of the sensing region SA, and can be connected to the PDA disposed in the pad region (see reference). Figure 3The pads in the NSA can be connected to internal circuitry provided in the non-sensing region NSA. When the number of wirings for the second multiplexer MUX2 is greater than the number of connecting lines CL, the width of the non-sensing region NSA in the second direction DR2 can be reduced by arranging the third multiplexer gate line MGL3, the fourth multiplexer gate line MGL4, and the second drive line DRL2 on the first direction DR1.

[0159] Reference Figure 13 In another embodiment, in the region where the second multiplexer MUX2 is disposed, the third multiplexer gate line MGL3, the fourth multiplexer gate line MGL4, and the second drive line DRL2 are disposed on the second direction DR2, and each of the third multiplexer gate line MGL3, the fourth multiplexer gate line MGL4, and the second drive line DRL2 can extend on the first direction DR1. When the number of wirings of the second multiplexer MUX2 is less than the number of connecting lines CL, the width of the non-sensing region NSA on the second direction DR2 can be reduced by arranging the third multiplexer gate line MGL3, the fourth multiplexer gate line MGL4, and the second drive line DRL2 on the second direction DR2.

[0160] Figure 14 This is a schematic plan view showing a comparison example of the sensing unit TSP_C included in the display device DD_C.

[0161] Reference Figure 14 The display device DD_C or the sensing unit TSP_C may include a first multiplexer MUX1_C and a second multiplexer MUX2.

[0162] The first multiplexer MUX1_C and the second multiplexer MUX2 can be positioned below the sensing area SA. The first multiplexer MUX1_C and the second multiplexer MUX2 can be positioned between the sensing area SA and the pad area PDA.

[0163] The first multiplexer gate line MGL1_C, the first drive line DRL1_C, and the second multiplexer gate line MGL2_C can be arranged in the region where the first multiplexer MUX1_C is disposed. For example, the first multiplexer gate line MGL1_C, the first drive line DRL1_C, and the second multiplexer gate line MGL2_C are arranged on the second direction DR2, and each of the first multiplexer gate line MGL1_C, the first drive line DRL1_C, and the second multiplexer gate line MGL2_C can extend on the first direction DR1.

[0164] For reference Figure 10As described, the first drive line DRL1_C may include multiple first drive lines, and the number of multiple first drive lines may be equal to the number of sensing electrodes included in a sensor array. For example, when 48 sensing electrodes are included in a sensor array, the first drive line DRL1_C may include 48 first drive lines. For example, a space with a width of 4 mm or more in the second direction DR2 may be needed to form a first multiplexer MUX1_C for driving the 48 sensing electrodes included in a sensor array. In addition to the first multiplexer MUX1_C, a second multiplexer MUX2 and a pad area PDA are also disposed in a non-sensing area NSA positioned in the direction below the sensing area SA, so the width of the non-sensing area NSA in the second direction DR2 may be 7 mm or more.

[0165] Therefore, refer to Figure 12 In the sensing unit TSP according to an embodiment of the present invention, by distributing the first sub-multiplexer MUX_S1 and the second sub-multiplexer MUX_S2 on one side and the other side of the sensing region SA, which are different from the direction in which the second multiplexer MUX2 is set, the width of the non-sensing region NSA in the second direction DR2 can be reduced. For example, in the case where 48 sensing electrodes are included in a sensor array, the width of the non-sensing region NSA in the second direction DR2 can be reduced to 3 mm.

[0166] Furthermore, since the first sub-multiplexers MUX_S1 and MUX_S2, which drive the sensing electrodes SP in the first region A1 and the second region A2 respectively, are arranged along the second direction DR2, the number of first drive lines DRL1 and the area used for the first drive lines DRL1 can be reduced. For example, when 48 sensing electrodes are included in a sensor array, each of the first sub-multiplexers MUX_S1 and MUX_S2 is connected to 24 sensing electrodes, and the number of first drive lines DRL1 can be 24, which is a comparative example. Figure 14 The number of first drive lines DRL1_C is reduced to half. Similarly, the number of first multiplexer gate lines MGL1 and second multiplexer gate lines MGL2 can also be reduced. Therefore, the increase in the width of the non-sensing region NSA located on one side and the other side of the sensing region SA in the first direction DR1 can be minimized. In other words, the total area of ​​the non-sensing region NSA can be minimized.

[0167] Figure 15 It is shown that it includes Figure 1A schematic plan view of an embodiment of the sensing unit TSP in a display device DD. For ease of description, any content that may overlap with the foregoing will be briefly described or will not be repeated.

[0168] Reference Figure 15 The first multiplexer MUX1 may include a first sub-multiplexer MUX_S1_1 and a second sub-multiplexer MUX_S2_1.

[0169] The first sub-multiplexer MUX_S1_1 can be located on one side of the sensing area SA, and the second sub-multiplexer MUX_S2_1 can be located on the other side of the sensing area SA. For example, the first sub-multiplexer MUX_S1_1 can be located on the left side of the sensing area SA, and the second sub-multiplexer MUX_S2_1 can be located on the right side of the sensing area SA.

[0170] The sensing region SA includes a first region A1_1 and a second region A2_2 arranged along a first direction DR1. A first sub-multiplexer MUX_S1_1 can be electrically connected to a sensing electrode SP in the first region A1_1, and a second sub-multiplexer MUX_S2_1 can be electrically connected to a sensing electrode SP in the second region A2_1. The first sub-multiplexer MUX_S1_1 may not be connected to the sensing electrode SP in the second region A2_1 or may be electrically disconnected from the sensing electrode SP in the second region A2_1, and the second sub-multiplexer MUX_S2_1 may not be connected to the sensing electrode SP in the first region A1_1 or may be electrically disconnected from the sensing electrode SP in the first region A1_1.

[0171] Since the first sub-multiplexer MUX_S1_1 is electrically connected to the sensing electrode SP in the first region A1_1, the first sub-multiplexer MUX_S1_1 can be substantially disposed on the entire side of the sensing region SA (e.g., the left side). Since the second sub-multiplexer MUX_S2_1 is electrically connected to the sensing electrode SP in the second region A2_1, the second sub-multiplexer MUX_S2_1 can be substantially disposed on the entire other side of the second sub-multiplexer MUX_S2_1 (e.g., the right side).

[0172] By distributing the first sub-multiplexer MUX_S1_1 and the second sub-multiplexer MUX_S2_1 on one side and the other side of the sensing region SA, which are in a direction different from that of the second multiplexer MUX2, the width of the non-sensing region NSA in the second direction DR2 can be reduced. For example, in the case where 48 sensing electrodes are included in a sensor array, the width of the non-sensing region NSA in the second direction DR2 can be reduced to 3 mm.

[0173] On the other hand, when 48 sensing electrodes are included in a sensor array, each of the first sub-multiplexer MUX_S1_1 and the second sub-multiplexer MUX_S2_1 is connected to the 48 sensing electrodes, and the number of wires connected to each of the first sub-multiplexer MUX_S1_1 and the second sub-multiplexer MUX_S2_1 is equal to the number of wires connected to the first sub-multiplexer MUX_S1_1 and the second sub-multiplexer MUX_S2_1. Figure 14 The number of wires in the first multiplexer MUX1_C is the same, and can be greater than the number connected to it. Figure 12 The number of wires in the first sub-multiplexer MUX_S1 or the second sub-multiplexer MUX_S2. When the number of rows is relatively small (e.g., when the number of columns is less than the number of sensor columns), Figure 14 Examples of these embodiments can be used.

[0174] The display device according to the embodiments can be applied to various electronic devices. The electronic device according to the embodiments includes the display device described above, and may also include modules or devices with additional functions in addition to the display device.

[0175] Figure 16 This is a block diagram of the electronic device 10 according to an embodiment. (Refer to...) Figure 16 The electronic device 10 according to the embodiment may include a display module 11 (or display device), a processor 12, a memory 13 and a power module 14.

[0176] The processor 12 may include at least one of a central processing unit (CPU), an application processor (AP), a graphics processing unit (GPU), a communication processor (CP), an image signal processor (ISP), and a controller.

[0177] The memory 13 can store the data information required for the operation of the processor 12 or the display module 11. When the processor 12 executes the application stored in the memory 13, image data signals and / or input control signals are sent to the display module 11, and the display module 11 can process the received signals and output image information through the display screen.

[0178] The power module 14 (or power source) may include a power supply module such as a power adapter or battery device, and a power conversion module that converts the power supplied by the power supply module to generate the power required for the operation of the electronic device 10.

[0179] At least one of the multiple components of the electronic device 10 described above may be included in the display device according to the embodiments described above (e.g., Figure 1The display device (DD) is included in the electronic device 10. Furthermore, some of the individual modules functionally included in a single module may be included in the display device, and others of the individual modules may be provided separately from the display device. For example, the display device includes a display module 11, and the processor 12, memory 13, and power module 14 may be provided as other devices in the electronic device 10 besides the display device.

[0180] Figure 17 These are schematic diagrams of electronic devices according to various embodiments.

[0181] Reference Figure 17 The display device according to the embodiment (e.g., Figure 1 The various electronic devices used in the display device (DD) can include not only electronic devices for displaying images such as smartphones 10_1a, tablet PCs 10_1b, laptops 10_1c, televisions (TVs) 10_1d, and desktop monitors 10_1e, but also wearable electronic devices containing display modules such as smart glasses 10_2a, head-mounted displays 10_2b, and smartwatches 10_2c, as well as vehicle electronic devices 10_3 including display modules such as CID (Central Information Display) and rearview mirror displays installed on the vehicle's dashboard, center console, and instrument panel.

[0182] It should be noted that although the technical concept of the present invention has been specifically described with reference to the foregoing embodiments, the foregoing embodiments are for illustrative purposes and not for limiting purposes. Furthermore, those skilled in the art will understand that various modifications can be made within the scope of the technical concept of the present invention.

[0183] In the sensing device, display device, and electronic device according to embodiments of the present invention, the multiplexer connected between the sensing electrode and the pad may include a first sub-multiplexer, a second sub-multiplexer, and a second multiplexer, and the first sub-multiplexer, the second sub-multiplexer, and the second multiplexer may be distributed (or dispersed) in different directions of the sensing area. Therefore, the average width of the edge (boundary) (or unused space, non-sensing area) can be minimized.

[0184] The effects of the embodiments are not limited to those described above, and many more kinds of effects are included herein.

Claims

1. A sensing device, wherein, The sensing device includes: Multiple sensors are arranged in a matrix in the sensing area; Multiple sensing lines are electrically connected to the multiple sensors, respectively; and The first multiplexer is electrically connected between the multiple sensing lines and the multiple pads. The sensing area includes a first area and a second area. The first multiplexer includes: The first sub-multiplexer is electrically connected to the sensor in the first region among the plurality of sensors; and The second sub-multiplexer is electrically connected to the sensor in the second region among the plurality of sensors, and The first sub-multiplexer is disposed on one side of the sensing area, and the second sub-multiplexer is disposed on the other side of the sensing area.

2. The sensing device according to claim 1, wherein, The first sub-multiplexer and the second sub-multiplexer are spaced apart from each other in a first direction, and the sensing area is located between the first sub-multiplexer and the second sub-multiplexer. The first region and the second region are arranged along a second direction that intersects with the first direction.

3. The sensing device according to claim 2, wherein, The first sub-multiplexer is located on one side of the first region but not on one side of the second region, and The second sub-multiplexer is located on the other side of the second region, but not on the other side of the first region.

4. The sensing device according to claim 2, wherein, The sensing device further includes a second multiplexer electrically connected between the first multiplexer and the plurality of pads. The second multiplexer and the plurality of pads are arranged along the second direction relative to the sensing area.

5. The sensing device according to claim 4, in, The first multiplexer includes: A first transistor is electrically connected between one of the plurality of sensing lines and a first driving line; and The second transistor is electrically connected between the sensing line and the connecting line, and The second multiplexer includes: A third transistor is electrically connected between the connection line and one of the plurality of pads; and The fourth transistor is electrically connected between the connection line and the second drive line.

6. The sensing device according to claim 5, in, The target pulse signal is applied to one of the pads. Specifically, a first driving signal having an opposite phase to the target pulse signal is applied to the first driving line, and A second driving signal having the same phase as the target pulse signal is applied to the second driving line.

7. The sensing device according to claim 6, wherein, For the sensors arranged in a row among the plurality of sensors: The second multiplexer electrically connects the first sensor in the column of sensors to one of the plurality of pads, and the second multiplexer electrically connects the second sensor in the column of sensors adjacent to the first sensor to the second drive line; and The first multiplexer electrically connects a third sensor, other than the first and second sensors, from the sensors in the column to the first drive line.

8. The sensing device according to claim 5, wherein, The sensing device further includes: multiple first drive lines, which are electrically connected to sensors arranged in a row among the multiple sensors via a first multiplexer. The plurality of first drive lines include the first drive line. Among them, a portion of the plurality of first drive lines are disposed on one side of the sensing area and electrically connected to the first sub-multiplexer, and The remaining portion of the plurality of first drive lines is disposed on the other side of the sensing area and electrically connected to the second sub-multiplexer.

9. The sensing device according to claim 8, wherein, For the sensors arranged in the column: The number of portions of the plurality of first drive lines is equal to the number of sensors arranged in the second direction in the first region, and The number of the remaining portions of the plurality of first drive lines is equal to the number of sensors arranged in the second direction in the second region.

10. The sensing device according to claim 8, wherein, The plurality of first drive lines extend in the second direction in the region where the first multiplexer is disposed.

11. The sensing device according to claim 10, wherein, The second drive line extends in the second direction in the region where the second multiplexer is located.

12. The sensing device according to claim 10, wherein, The second drive line extends in the first direction in the region where the second multiplexer is located.

13. The sensing device according to claim 1, wherein, The first multiplexer selectively couples one of the plurality of sensors arranged in two columns to one of the plurality of pads.

14. The sensing device according to claim 1, wherein, The first sub-multiplexer and the second sub-multiplexer are spaced apart from each other in a first direction, and the sensing area is located between the first sub-multiplexer and the second sub-multiplexer. The first region and the second region are arranged along the first direction.

15. A display device, wherein, The display device includes: The display unit includes a substrate layer and a light-emitting element disposed on the substrate layer; A sensing unit is disposed on the display unit, and the sensing unit includes multiple sensors arranged in a matrix in a sensing area and multiple sensing lines electrically connected to the multiple sensors respectively; and The first multiplexer is electrically connected between the multiple sensing lines and the multiple pads. The sensing area includes a first area and a second area. The first multiplexer includes: The first sub-multiplexer is electrically connected to the sensor in the first region among the plurality of sensors; and The second sub-multiplexer is electrically connected to the sensor in the second region among the plurality of sensors, and The first sub-multiplexer is disposed on one side of the sensing area, and the second sub-multiplexer is disposed on the other side of the sensing area.

16. The display device according to claim 15, wherein, The first sub-multiplexer and the second sub-multiplexer are spaced apart from each other in a first direction, and the sensing area is located between the first sub-multiplexer and the second sub-multiplexer. The first region and the second region are arranged along a second direction that intersects with the first direction.

17. The display device according to claim 16, wherein, The display device further includes a second multiplexer electrically connected between the first multiplexer and the plurality of pads. The second multiplexer and the plurality of pads are arranged along the second direction relative to the sensing area.

18. The display device according to claim 17, in, The first multiplexer includes: A first transistor is electrically connected between one of the plurality of sensing lines and a first driving line; and The second transistor is electrically connected between the sensing line and the connecting line, and The second multiplexer includes: A third transistor is electrically connected between the connection line and one of the plurality of pads; and The fourth transistor is electrically connected between the connection line and the second drive line.

19. The display device according to claim 15, wherein, The display unit includes a light-emitting element layer containing light-emitting devices and an encapsulation layer disposed on the light-emitting element layer, and The sensing unit is directly disposed on the encapsulation layer.

20. An electronic device, wherein, The electronic device includes: The processor provides the input image data; A display device that displays an image based on the input image; and The power supply provides power to the display device. The display device includes: The display unit includes a substrate layer and a light-emitting element disposed on the substrate layer; A sensing unit is disposed on the display unit, and the sensing unit includes multiple sensors arranged in a matrix in a sensing area and multiple sensing lines electrically connected to the multiple sensors respectively; and The first multiplexer is electrically connected to the multiple sensing lines. The sensing area includes a first area and a second area. The first multiplexer includes a first sub-multiplexer electrically connected to the sensors in the first region of the plurality of sensors and a second sub-multiplexer electrically connected to the sensors in the second region of the plurality of sensors. The first sub-multiplexer is disposed on one side of the sensing area, and the second sub-multiplexer is disposed on the other side of the sensing area.

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