A silicon carbide grid and a method of manufacturing the same, an ion source apparatus, and a semiconductor device

Abstract

The application provides a silicon carbide grid and a preparation method thereof, an ion source device and a semiconductor device, and relates to the technical field of semiconductors. The position of the raised structure on the substrate is determined based on the grid hole, a silicon carbide coating is formed based on the substrate structure, after one-time cutting processing, the gap part between the first deposited silicon carbide coating and the raised structure is filled by gradually processing the cut structure and combining the second deposited silicon carbide coating, the film layer quality of the silicon carbide coating is improved, and after the raised structure is removed, the silicon carbide grid with the hole structure and high quality is formed. The punching process of thousands of holes of the silicon carbide grid is omitted, the preparation process of the silicon carbide grid is greatly simplified, and the production cost is greatly reduced. The prepared high-quality silicon carbide grid not only has good electrical and thermal conductivity performance, but also can effectively reduce the trace metal element pollution and particle pollution in the process.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, and in particular to a silicon carbide gate and its preparation method, an ion source device, and a semiconductor equipment. Background Technology

[0002] In the construction of ion sources that generate ion beams, the fabrication and quality control of the grid are crucial to the application of IBE (Ion Beam Etching) / FSE (Flexible Shaping Etch) in advanced process technologies.

[0003] Currently, the grids used are either metal grids or graphite grids. Metal grids can lead to metal element contamination, while graphite grids introduce significant particulate pollution.

[0004] Therefore, how to provide a new type of grid to solve the technical problems existing in the grid technology is a technical problem that urgently needs to be solved by those skilled in the art. Summary of the Invention

[0005] In view of the above problems, this application provides a silicon carbide gate mesh, its preparation method, an ion source device, and a semiconductor device. The prepared silicon carbide gate mesh not only has good electrical and thermal conductivity properties, but also effectively reduces trace metal element contamination and particulate contamination during the process, and eliminates the drilling process of thousands of holes, greatly simplifying the preparation process of the silicon carbide gate mesh and significantly reducing production costs. The specific solution is as follows:

[0006] The first aspect of this application provides a method for preparing a silicon carbide gate, the method comprising:

[0007] A substrate is provided; the substrate includes a first surface and a second surface disposed opposite to each other in a first direction, the first surface and the second surface respectively having a plurality of spaced-apart protrusions; the position of the protrusions is determined based on the mesh openings; the first direction is parallel to the length extension direction of the protrusions;

[0008] A silicon carbide coating is formed on the substrate; the silicon carbide coating completely covers the protruding structure;

[0009] The substrate is cut along the direction of the plane in which the substrate is located to form a first intermediate structure;

[0010] The cut surface of the first intermediate structure is processed to expose the protruding structure and the gap between the protruding structure and the silicon carbide coating, forming a second intermediate structure;

[0011] A silicon carbide coating is formed based on the second intermediate structure, covering the protruding structure and filling the voids to form a third intermediate structure;

[0012] The third intermediate structure is processed to expose the two ends of the protruding structure in the first direction, forming a fourth intermediate structure;

[0013] The protruding structure is removed based on the fourth intermediate structure to form a silicon carbide grid.

[0014] Preferably, in the above method for preparing the silicon carbide gate, forming the silicon carbide coating includes:

[0015] The silicon carbide coating is formed using a CVD process.

[0016] Preferably, in the above method for preparing the silicon carbide gate, the step of forming the silicon carbide coating based on the CVD process includes:

[0017] Based on silicon-containing and carbon-containing reaction gases, the silicon carbide coating is deposited using a CVD process under an environment with a target flow rate of Ar or H2 carrier gas and a temperature of 1200℃-2000℃.

[0018] Preferably, in the above-described method for preparing silicon carbide grids, the silicon-containing reaction gas includes SiH4 gas, SiCl4 gas, or MTS; the carbon-containing reaction gas includes C2H2 gas, C3H8 gas, CH4 gas, or C2H4 gas.

[0019] Preferably, in the above method for preparing the silicon carbide gate, the step of forming the silicon carbide coating based on the CVD process includes:

[0020] Based on the CVD process, the doping amount of elements in the CVD process is controlled to deposit a silicon carbide coating with a target resistivity.

[0021] Preferably, in the above method for preparing silicon carbide grids, the resistivity of the silicon carbide coating is less than 2000 Ω·cm.

[0022] Preferably, in the above method for preparing silicon carbide grids, the resistivity of the silicon carbide coating is less than 20 Ω·cm.

[0023] Preferably, in the above method for preparing silicon carbide grids, the resistivity of the silicon carbide coating is less than 0.1 Ω·cm.

[0024] Preferably, in the above-described method for preparing a silicon carbide gate, the step of forming a silicon carbide coating on the substrate includes:

[0025] A silicon carbide coating with a thickness at least greater than the height of the protrusion structure is formed on the substrate.

[0026] Preferably, in the above-described method for preparing a silicon carbide gate, the step of forming a silicon carbide coating on the substrate includes:

[0027] A silicon carbide coating is formed on a graphite substrate.

[0028] Preferably, in the above method for preparing silicon carbide grids, when the substrate is a graphite substrate, the thickness of the graphite substrate ranges from 1 mm to 50 mm.

[0029] Preferably, in the above method for preparing silicon carbide grids, when the substrate is a graphite substrate, the (0001) carbon crystal plane orientation of the graphite crystal is selected as the substrate surface.

[0030] Preferably, in the above-described method for preparing a silicon carbide gate, when the substrate is a graphite substrate, the method for preparing the silicon carbide gate further includes, before forming a silicon carbide coating on the substrate:

[0031] The target gas is introduced for purification during the heating process in the target high-temperature environment.

[0032] Preferably, in the above-described method for preparing a silicon carbide gate, the step of removing the protrusion structure based on the fourth intermediate structure to form a silicon carbide gate includes:

[0033] The fourth intermediate structure is subjected to at least one high-temperature treatment and surface treatment to remove the protruding structure and form the silicon carbide grid.

[0034] Preferably, in the above-described method for preparing the silicon carbide gate, the step of performing at least one high-temperature treatment and surface treatment on the fourth intermediate structure includes:

[0035] The fourth intermediate structure is heated to a temperature range of 800℃-1800℃ to oxidize the surface structure of the fourth intermediate structure into a SiO2 surface and oxidize the protruding structure. Then, the SiO2 surface is etched away at room temperature using an acid solution containing HF to form the silicon carbide gate.

[0036] Preferably, in the above-described method for preparing the silicon carbide gate, the step of performing at least one high-temperature treatment and surface treatment on the fourth intermediate structure includes:

[0037] The fourth intermediate structure is heated to a temperature range of 800℃-1800℃, and its surface structure is removed by gas corrosion in an environment containing corrosive gases.

[0038] The fourth intermediate structure is heated to a temperature range of 800℃-1800℃ to oxidize the surface of the fourth intermediate structure into a SiO2 surface and oxidize the protruding structure. Then, the SiO2 surface is etched away at room temperature using an acid solution containing HF to form the silicon carbide gate.

[0039] Preferably, in the above-described method for preparing the silicon carbide gate, the method further includes:

[0040] The silicon carbide grid is subjected to chemical cleaning treatment.

[0041] Preferably, in the above-described method for preparing a silicon carbide gate, the step of cutting the substrate along the plane of the substrate to form a first intermediate structure includes:

[0042] The substrate is cut along the plane of the substrate to form two pieces of the first intermediate structure.

[0043] Preferably, in the above-mentioned method for preparing silicon carbide grids, the shape of the protrusion structure is cylindrical, conical, trapezoidal, or stepped.

[0044] A second aspect of this application provides a silicon carbide gate, which is obtained by the method for preparing a silicon carbide gate as described in any one of the preceding claims.

[0045] A third aspect of this application provides an ion source device, the ion source device comprising the silicon carbide grid described above.

[0046] A fourth aspect of this application provides a semiconductor device comprising the silicon carbide gate described above.

[0047] Preferably, in the above-described semiconductor device, the semiconductor device is a semiconductor device that uses an ion source device.

[0048] By employing the above technical solution, this application provides a silicon carbide gate mesh and its preparation method, an ion source device, and a semiconductor device. By modifying the substrate to have multiple spaced-apart protrusions on its first and second surfaces, the positions of these protrusions are determined based on the gate mesh's perforations. A silicon carbide coating is formed based on this substrate structure. After a first cutting process, the gaps between the first-deposited silicon carbide coating and the protrusions are filled by progressively processing the cut structure and combining it with a second-deposit silicon carbide coating, improving the film quality of the silicon carbide coating. After removing the protrusions, a high-quality silicon carbide gate mesh with a perforated structure is formed, eliminating the need for drilling thousands of holes in the silicon carbide gate mesh, greatly simplifying the preparation process and significantly reducing production costs. The prepared high-quality silicon carbide gate mesh not only possesses excellent electrical and thermal conductivity properties but also effectively reduces trace metal element contamination and particulate contamination during the process. Attached Figure Description

[0049] The above and other features, advantages, and aspects of the embodiments of this disclosure will become more apparent from the accompanying drawings and the following detailed description. Throughout the drawings, the same or similar reference numerals denote the same or similar elements. It should be understood that the drawings are schematic, and the originals and elements are not necessarily drawn to scale.

[0050] Figure 1 This is a schematic flowchart illustrating a method for preparing a silicon carbide grid according to an embodiment of the present invention.

[0051] Figure 2 for Figure 1 A partial structural schematic diagram corresponding to the preparation method shown;

[0052] Figure 3 This is a schematic diagram of a protrusion structure formed on a substrate according to an embodiment of the present invention;

[0053] Figure 4 This is a schematic diagram illustrating a protrusion structure designed and formed on a substrate according to an embodiment of the present invention;

[0054] Figure 5 for Figure 1 A partial structural schematic diagram corresponding to the preparation method shown;

[0055] Figure 6 This is a top view diagram of the morphology after deposition of a silicon carbide coating, provided in an embodiment of the present invention.

[0056] Figure 7 This is a schematic diagram of the cross-sectional morphology after deposition of a silicon carbide coating, provided in an embodiment of the present invention.

[0057] Figure 8 for Figure 1A partial structural schematic diagram corresponding to the preparation method shown;

[0058] Figure 9 This is a schematic diagram of a corresponding part of the structure during the processing provided in an embodiment of the present invention;

[0059] Figure 10-14 for Figure 1 A partial structural schematic diagram corresponding to the preparation method shown. Detailed Implementation

[0060] The embodiments of this application are described below with reference to the accompanying drawings. The terminology used in the implementation section of this application is only for explaining specific embodiments and is not intended to limit the application. Those skilled in the art will recognize that, with technological advancements and the emergence of new scenarios, the technical solutions provided in the embodiments of this application are also applicable to similar technical problems.

[0061] It should be noted that the directional terms appearing in this invention are based on the relative positional relationships shown in the accompanying drawings and should not be taken as absolute limitations on this application.

[0062] The Central Processing Unit (CPU), composed of semiconductor chips in an integrated circuit structure, is widely used in various everyday products such as medical devices, automobiles, and mobile phones, playing an increasingly important role in people's social lives. With the reduction of CPU feature size, the reduction of focal depth in photolithography equipment, and the trend towards 3D stacking of chip structures during the manufacturing process of very large-scale integrated circuits, more stringent requirements and challenges have been placed on the microscopic correction and planarization processes of the wafer chip morphology that form the CPU.

[0063] Currently, for devices with a minimum feature size of 0.35 micrometers or less, Chemical Mechanical Polishing (CMP) is the mainstream technology for achieving silicon wafer planarization. However, with the development of advanced technology nodes (above 22nm) and the emergence of new integration processes, such as the replacement of Replacement Metal Gates (RMGs), Self-Aligned Contacts (SACs), and polysilicon aperture CMP, more challenges are posed to the thickness and morphological uniformity of chip structures (up to the nanometer or even angstrom level). Improper process control in CMP contact processing can lead to substrate defects, and particulate contamination induced by the polishing slurry, limiting its application and reducing yield. Furthermore, CMP technology currently cannot achieve high-precision planarization control at the nanometer or angstrom level, making it difficult to perform highly uniform and precise machining of Replacement Metal Gates (RMGs) for Fin-FET nodes. These inherent drawbacks of CMP processes limit its application in advanced manufacturing processes where chip sizes are constantly shrinking.

[0064] In the past, ion beam plastic modification (IBS) of chip structures based on ion beam etching (IBE) and flexible shaping etching (FSE) technologies, such as micromachining and planarization, has provided new opportunities for achieving precise control of chip thickness at the nanometer scale as the latest development in dry etching technology. This technology uses an ion source to provide neutral gas ions with a certain energy to bombard the wafer surface, removing or selectively removing surface material through physical sputtering. By optimizing the ion beam (energy, beam current density, and other parameters) during the process, the IBS process can effectively control the movement of colliding ions, achieving ultra-precision machining of atomic-level planes and modification of chip pattern surface roughness. This truly achieves nanometer-level cross-wafer uniformity and flatness control (3σ < 15 Å within a 300mm wafer), meeting the stringent in-wafer uniformity targets of Fin-Fet and even GAA (Gate-All-Around) technologies. Furthermore, by controlling the ion beam drawn from the ion source during the IBE / FSE process, the energy and incident angle of the bombarding ions can be adjusted, giving IBS a unique advantage in directional etching for surface micromachining. This allows for different etching rates to be achieved on specific material surfaces at different incident ion angles. These characteristics enable IBS based on IBE / FSE technology to modify the shape and arrangement of EUV-generated chip patterns in EUV (Extreme Ultraviolet) patterning processes during chip manufacturing. This replaces multiple EUV patterning processes, reduces the number of double or multiple EUV exposures, simplifies the manufacturing process for small-sized, high-precision chips, and improves production efficiency. Therefore, IBE and FSE technologies are finding increasingly important applications in advanced processes such as the miniaturization of advanced logic chip manufacturing nodes and the trend towards 3D memory chips.

[0065] Currently, to ensure the smooth operation of high-precision micromachining or planarization processes on wafer surfaces, IBE (Integrated Electrochemical Embedding) is required to strictly control trace element and particulate contamination caused by IBS (Integrated Blasting) processes on wafer surfaces. Typically, the trace element concentrations on a 300mm wafer surface during IBS processes must not exceed 1E10 atom / cm³. 2 The number of particles with a size of 0.045 micrometers must be less than 20. This requires the ion source to have high structural stability during the IBE / IBS process, and the ion source must not introduce trace elements and particle contamination into the formed ion beam, thereby affecting the IBE / IBS process.

[0066] However, based on the background information, the fabrication and quality control of the grid in the ion source structure for generating ion beams are crucial to the application of IBE / FSE in advanced process technologies. On one hand, the grid's composition and function determine the beam current density, beam current distribution, and energy distribution of the energy-carrying ion beam formed by the ion source during IBE / FSE. On the other hand, the grid's operational stability affects the ion source's operating time and the efficiency with which it maintains IBE / FSE. Furthermore, the choice and stability of the grid material are critical to particulate and trace element contamination in the IBE chamber. Currently, the metal grids commonly used in ion source structures, such as Mo grids, can cause contamination by metal elements like Mo during the IBS process, significantly limiting the application of IBE technology in many critical processes. To mitigate trace metal contamination, high-purity graphite has been used to fabricate grids to replace Mo grids. However, the erosion caused by the ion beam introduces a large amount of particulate contamination into the graphite grid during IBE / FSE, reducing the process stability of IBS.

[0067] Currently, some existing technologies are based on CVD processes to prepare silicon carbide coatings to improve the stability of the grid and reduce particulate contamination. However, due to the high hardness of silicon carbide substrates, second only to diamond, it is difficult to effectively perform drilling for forming silicon carbide grids with densely distributed pores. This results in a long preparation cycle and high production costs for silicon carbide grids.

[0068] To reduce or mitigate trace element and particulate contamination and stabilize the IBS production process, it is urgent to improve the processing methods of silicon carbide grids and develop stable ion sources to broaden the application of advanced technologies such as IBS in advanced chip manufacturing processes.

[0069] Based on this, this application provides a silicon carbide gate mesh and its preparation method, ion source device, and semiconductor equipment. By modifying the substrate to have multiple spaced-apart protrusions on its first and second surfaces, the positions of these protrusions are determined based on the gate mesh's perforations. A silicon carbide coating is formed based on this substrate structure. After a first cutting process, the gaps between the first-deposited silicon carbide coating and the protrusions are filled by progressively processing the cut structure and combining it with a second-deposit silicon carbide coating, improving the film quality of the silicon carbide coating. After removing the protrusions, a high-quality silicon carbide gate mesh with a perforated structure is formed, eliminating the need for drilling thousands of holes in the silicon carbide gate mesh, greatly simplifying the preparation process and significantly reducing production costs. The prepared high-quality silicon carbide gate mesh not only possesses excellent electrical and thermal conductivity properties but also effectively reduces trace metal element contamination and particulate contamination during the process.

[0070] To make the above-mentioned objects, features and advantages of the present invention more apparent and understandable, the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0071] The silicon carbide gate prepared in this embodiment of the invention is used in ion source devices and semiconductor equipment, wherein the semiconductor equipment is a semiconductor device using an ion source and a coating device, etc. (Reference) Figure 1 , Figure 1 This is a schematic flowchart illustrating a method for fabricating a silicon carbide gate mesh according to an embodiment of the present invention. The method for fabricating a silicon carbide gate mesh according to an embodiment of the present invention includes:

[0072] S101: As Figure 2 As shown, a substrate 11 is provided; the substrate 11 includes a first surface and a second surface disposed opposite to each other in a first direction X, and the first surface and the second surface respectively have a plurality of spaced protrusions 12; the position of the protrusions 12 is determined based on the mesh holes; the first direction X is parallel to the length extension direction of the protrusions 12.

[0073] In this step, it is first necessary to select a suitable substrate 11 for preparing the silicon carbide coating. In an optional embodiment of the present invention, the silicon carbide coating is deposited on a graphite substrate.

[0074] like Figure 2 As shown, the substrate 11 has a plurality of spaced-apart protrusions 12 on both sides of its surface in the first direction X. The position of the protrusions 12 is determined based on the grid apertures. In an optional embodiment of the present invention, the shape of the protrusions 12 includes, but is not limited to, a cylindrical shape. When the protrusions 12 are cylindrical, their diameter is the same as the diameter of the grid apertures to be prepared.

[0075] refer to Figure 3 , Figure 3 This is a schematic diagram illustrating the formation of a protrusion structure on a substrate according to an embodiment of the present invention. The substrate formed is as follows: Figure 3 As shown in (a), the substrate 11 is a circular or other shaped plate with sufficient thickness to accommodate mounting within a CVD chamber. First, the substrate 11 is machined into a stepped plane with a certain height and shape, such as... Figure 3 (b) shows a regular hexagon. Then, using different processes such as machining, laser cutting, or sandblasting, or a combination of these processes, the surface of the step is machined into numerous small hexahedral protrusions with certain gaps and a regular distribution, such as... Figure 3 As shown in (c)-3(e). Then, using precision machining, the small hexahedral protrusions are processed into small circular protrusions with the diameter of the grid holes to form the required protruding structure, such as... Figure 3As shown in (f). The height of the protrusion structure 12 can be determined according to the depth of the grid holes (grid thickness) and the thickness of the silicon carbide coating required to form the silicon carbide grid. This processing can be performed on a single surface of the substrate 11 or on both surfaces of the substrate 11 to facilitate the simultaneous preparation of silicon carbide coatings on both surfaces. In this embodiment of the invention, the protrusion structure 12 is described as being formed on both surfaces of the substrate 11.

[0076] refer to Figure 4 , Figure 4 This is a schematic diagram illustrating the design of a raised structure on a substrate according to an embodiment of the present invention. In an optional embodiment of the present invention, the raised structure 12 is described with a height of 1.8 mm, a diameter of 2.5 mm, and a minimum spacing of 1.5 mm between two adjacent raised structures 12.

[0077] S102: As Figure 5 As shown, a silicon carbide coating 13 is formed on the substrate 11; the silicon carbide coating 13 completely covers the protrusion structure 12.

[0078] Specifically, in an optional embodiment of the present invention, the silicon carbide coating 13 can be formed based on a CVD process.

[0079] First, let's explain the CVD process: Chemical vapor deposition (CVD), also known as thermochemical vapor deposition, is a material surface film deposition process developed in the late 1980s and widely used in the semiconductor industry. CVD generally involves thermally decomposing reaction products at high temperatures (650°C - 2500°C) to form high-vapor-pressure reaction gases. These gases condense on the substrate surface through a chemical reaction, forming numerous crystal nuclei. These nuclei aggregate into microcrystalline thin layers, which then continue to grow into a film with a crystalline structure. Chemical vapor deposition has advantages such as low investment, ease of continuous production, and simple operation.

[0080] Among them, the substrate materials for the silicon carbide coating 13 prepared by CVD process include graphite, SiC, AlN, and BN, as well as some materials with a thermal expansion coefficient that differs from that of silicon carbide by less than ±2.5×10⁻⁶. -6 Ceramic materials with a thermal expansion coefficient of 4.6 × 10⁻⁶ °C, such as β-SiC. -6 If the temperature is / °C, then the coefficient of thermal expansion of the selected ceramic matrix material should be 2.1×10⁻⁶. -6 / °C to 7.1×10 -6 Within the range of / °C.

[0081] To ensure the stable growth of a silicon carbide coating 13 with a specific crystal structure on the surface of substrate 11 during high-temperature CVD, the material of substrate 11 must first possess stable high-temperature heating resistance and thermal expansion properties similar to silicon carbide. In an optional embodiment of the present invention, the silicon carbide coating 13 is deposited on a graphite substrate. This is because graphite not only has a thermal expansion coefficient similar to SiC, good thermal conductivity and high-temperature heating performance, and good machinability, but also because the protrusion structure 12 on the graphite substrate can be removed during the subsequent high-temperature processing described in this application. When a graphite substrate is selected as the substrate 11 for depositing the silicon carbide coating 13 in the CVD process, the (0001) carbon crystal plane orientation of the graphite crystal can be selected as the surface of substrate 11 to facilitate the deposition of the silicon carbide coating 13 with α-SiC and β-SiC phase structures. When the substrate 11 is a graphite substrate, the method for preparing the silicon carbide grid before forming the silicon carbide coating 13 further includes: purifying the surface by introducing a target gas during the heating process in the target high-temperature environment. For example, before the graphite substrate enters the CVD chamber, it needs to be purified by introducing Cl2 gas during the high-temperature heating process.

[0082] In an optional embodiment of the present invention, the formation of the silicon carbide coating 13 based on the CVD process includes:

[0083] Based on silicon-containing and carbon-containing reaction gases, the silicon carbide coating 13 is deposited on the substrate 11 using a CVD process in an environment with a target flow rate of Ar or H2 carrier gas and a temperature of 1200℃-2000℃.

[0084] The silicon-containing reaction gas includes SiH4 gas, SiCl4 gas, or MTS (i.e., CH3SiCl3); the carbon-containing reaction gas includes C2H2 gas, C3H8 gas, CH4 gas, or C2H4 gas.

[0085] The process temperature, reaction gases and pressures used in the CVD process, as well as the material of the substrate 11, have a significant impact on the deposition rate of the silicon carbide coating 13 and the resulting crystal structure. Generally, when using a (0001) oriented graphite substrate, a CVD deposition temperature of 1500°C or higher helps to prepare a β-SiC coating with a complex cubic structure.

[0086] Silicon-containing chemical reaction gases, such as saline (SiH4), silicon chloride (SiCl4), and methyltrichlorosilane (MTSor CH3SiCl3), undergo thermal decomposition during the CVD process to form silicon-containing active components. These components then react with carbon-containing hydrocarbon chemical reaction gases, such as ethylene (C2H2), methane (CH4), ethylene (C2H4), and propane (C3H8), during the CVD process to form carbon-containing active components. This reaction occurs on the surface of the substrate 11, forming a silicon carbide coating 13. The flow rate ratio of the reaction gases, such as the SiH4 to C2H2 ratio, can affect the surface roughness of the formed silicon carbide coating 13. Furthermore, hydrogen (H2) is often used as a carrier gas during the CVD deposition of the silicon carbide coating 13.

[0087] Under the conditions of introducing C2H4 and CH4, the chemical reaction that forms the silicon carbide coating 13 during the CVD process is as follows:

[0088] SiH4(G) + CH4(G) = SiC(S) + 4H2(G)

[0089] Or 2SiH4(G) + C2H4(G) = 2SiC(S) + 6H2(G)

[0090] Here, S stands for Solid, and G stands for Gas, which represents gas.

[0091] Silicon carbide (SiC) is a hard material in which carbon and silicon are arranged in a tetrahedral pattern. SiC possesses numerous excellent properties, such as a low coefficient of thermal expansion, strong radiation resistance, high drift velocity, high working strength, high thermal conductivity, good thermal stability, oxidation resistance, and corrosion resistance. SiC prepared using CVD (Chemical Vapor Deposition) technology can also exhibit a controllable crystal structure, adjustable resistivity (0.01-1E8 Ω·cm), and ultra-pure chemical composition (purity can reach 99.9995%). Among these, CVD-prepared β-SiC with a cubic structure exhibits greater high-temperature stability and superior resistance to plasma etching compared to sintered SiC. Currently, CVD technology can be used to prepare solid SiC substrates with a thickness exceeding 20 mm.

[0092] In an optional embodiment of the present invention, the formation of the silicon carbide coating 13 based on the CVD process includes:

[0093] Based on the CVD process, the doping amount of elements in the CVD process is controlled to deposit a silicon carbide coating 13 with a target resistivity.

[0094] For example, the resistivity of the prepared silicon carbide coating 13 is controlled by controlling the doping amount of elements such as B, N, and P during the CVD process. During the preparation of the CVD silicon carbide coating 13, a gas containing nitrogen (such as N2), boron (such as boron trichloride and diborane), or phosphorus (such as phosphine and phosphorus trifluoride) is introduced to dope the deposited silicon carbide coating 13 with N, B, or P, thereby changing or controlling the resistivity of the formed silicon carbide coating 13.

[0095] In this embodiment of the invention, the resistivity of the silicon carbide coating 13 is less than 2000 Ω·cm, preferably less than 20 Ω·cm, and more preferably less than 0.1 Ω·cm.

[0096] Specifically, the grid used for the ion source must have good conductivity. Therefore, the silicon carbide coating 13 prepared in this invention is a silicon carbide coating 13 with low resistivity. Exemplarily, the resistivity of the silicon carbide coating 13 is less than 2000 Ω·cm, preferably, the resistivity of the silicon carbide coating 13 is less than 20 Ω·cm, and more preferably, the resistivity of the silicon carbide coating 13 is less than 0.1 Ω·cm.

[0097] In an optional embodiment of the present invention, when the substrate 11 is a graphite substrate, the thickness of the graphite substrate ranges from 1 mm to 50 mm.

[0098] Specifically, in a preferred embodiment of the present invention, Saline (SiH4) is used as the silicon-containing reactant gas, Ethylene (C2H2) or propane (C3H8) is used as the carbon-containing reactant gas, and a certain flow rate of H2 carrier gas is added. A silicon carbide coating 13 is deposited on a graphite substrate within a temperature range of 1200℃-2000℃. In this embodiment of the present invention, a graphite substrate with a thickness between 1mm and 50mm is used, and the silicon carbide coating 13 is uniformly deposited on its outer surface.

[0099] In an optional embodiment of the present invention, forming a silicon carbide coating 13 on the substrate 11 includes:

[0100] A silicon carbide coating 13 with a thickness at least greater than the height of the protrusion structure 12 is formed on the substrate 11; wherein the thickness of the silicon carbide coating 13 on the surface of the protrusion structure 12 is at least greater than 0.5 mm.

[0101] In order to ensure that the silicon carbide coating 13 completely covers the protrusion structure 12 on the substrate 11 and to ensure the processing quality of the formed silicon carbide grid, a silicon carbide coating 13 with a thickness of at least 0.5 mm needs to be formed on the surface of the protrusion structure 12 on the substrate 11.

[0102] Specifically, after the deposition of the silicon carbide coating 13 is completed, in order to effectively and completely cover the substrate with the protrusion structure 12, the formed silicon carbide coating 13 needs to have sufficient thickness. According to the requirements for the use of the ion source grid, the thickness of the silicon carbide coating 13 required for the prepared silicon carbide grid is at least greater than the height of the protrusion structure 12 (e.g., ...). Figure 4 In this embodiment, the silicon carbide coating thickness is greater than 1.8 mm. Furthermore, to ensure that the silicon carbide coating 13 completely covers the upper surface of the raised structure 12 and to facilitate subsequent processing and forming of the silicon carbide grid, the thickness of the silicon carbide coating 13 on the surface of the raised structure 12 on the substrate 11 required for the prepared silicon carbide grid is at least greater than 0.2 mm. More preferably, the thickness of the silicon carbide coating 13 on the surface of the raised structure 12 on the substrate 11 required for the prepared silicon carbide grid is at least greater than 0.5 mm. To improve production efficiency and reduce the processing steps of the silicon carbide grid, in this embodiment of the invention, the thickness of the silicon carbide coating 13 prepared based on the CVD process can be controlled to be greater than 2 mm. Of course, increasing the thickness to between 2 mm and 5 mm will be even better.

[0103] It should be noted that the silicon carbide coating 13 prepared based on the CVD process has the following advantages:

[0104] Advantage 1: High purity and high hardness; Advantage 2: Adjustable crystal structure and resistivity; Advantage 3: Capable of forming large-area films on flat substrates with a thickness of over 15mm; Advantage 4: Good corrosion resistance and plasma etching resistance; Advantage 5: Good thermal conductivity and thermal stability.

[0105] refer to Figure 6 , Figure 6 This is a top view schematic diagram of the morphology after deposition of a silicon carbide coating provided in an embodiment of the present invention, with reference to... Figure 7 , Figure 7 This is a schematic diagram of the cross-sectional morphology after deposition of a silicon carbide coating, provided as an embodiment of the present invention. (Combined with...) Figure 5 The schematic diagram of the simplified structure illustrates that although the silicon carbide coating 13 of sufficient thickness completely covers the surface of the substrate 11, the presence of the protrusion structure 12 on the surface of the substrate 11 causes the silicon carbide coating 13 to be generated simultaneously from the bottom surface, the circumference and the surface of the protrusion structure 12. The resulting silicon carbide coating 13 exhibits a hexagonal cell-like coating morphology on the surface after enclosing the protrusion structure 12.

[0106] like Figure 7The diagram shows the cross-sectional coating morphology of substrate 11, clearly revealing the microstructure of small protrusions 12 enveloped by the silicon carbide coating 13. However, it can be observed that near and adjacent to the protrusions 12 on the surface of substrate 11, there are voids 14 not filled by the silicon carbide coating 13. Figure 4 As shown, the minimum distance between the protruding structures 12 is 1.5 mm, which is less than the height of the protruding structure 12 (1.8 mm). Since the silicon carbide coating 13 is a three-dimensional growth process, only a 0.75 mm thick silicon carbide coating 13 needs to be grown between the sides of the two protruding structures 12 during the CVD process to achieve welding of the silicon carbide coating 13 between adjacent protruding structures 12. This growth thickness is less than the thickness of the silicon carbide coating 13 grown from the bottom to the top of the protruding structure 12 (1.8 mm). Furthermore, compared to the flow of reactive gas on the top surface of the protruding structure 12, the flow of reactive gas is uneven between the bottom and top of the protruding structure 12 due to the obstruction of the protruding structure 12. The flow of reactive gas is hindered at the bottom of the protruding structure 12, resulting in a greater growth rate of the silicon carbide coating 13 at the top than at the bottom. Therefore, uniform growth from bottom to top cannot be achieved on the bottom side surface of the protruding structure 12. Before the silicon carbide coating 13 reaches a thickness of 1.8 mm, the coating is welded between the ends of the holes, resulting in the bottom of the protruding structure 12 not being completely filled with the silicon carbide coating 13. This causes uneven growth of the silicon carbide coating 13, forming gaps 14 between the protruding structures 12 that are not filled by the silicon carbide coating 13, such as... Figure 5 As shown.

[0107] S103: As Figure 8 As shown, the substrate 11 is cut along the plane of the substrate 11 to form a first intermediate structure 16. Reference numeral 15 indicates a cutting tool.

[0108] It should be noted that when a silicon carbide coating 13 is deposited on one side surface of the substrate 11, cutting the substrate 11 along the plane of the substrate 11 can form a first intermediate structure 16. When a silicon carbide coating 13 is deposited on both sides of the substrate 11, cutting the substrate 11 along the plane of the substrate 11 can form two first intermediate structures 16.

[0109] refer to Figure 9 , Figure 9 This is a schematic diagram of a portion of the structure during the processing provided in an embodiment of the present invention. It should be further noted that, in this embodiment, the example is taken as cutting the substrate 11 to form two first intermediate structures 16. Figure 8 and Figure 9 As shown in (a).

[0110] Specifically, after the thickness of the silicon carbide coating 13 prepared by the CVD process is at least sufficient to meet the thickness requirements for forming a silicon carbide grid, the substrate 11 is then cut.

[0111] In the embodiments of the present invention, such as Figure 8 As shown, the substrate 11 is cut into two pieces along the plane of the substrate 11 into two structures, each with a silicon carbide coating 13 thickness of at least 0.5 mm on the surface of the raised structure 12, namely the first intermediate structure 16.

[0112] It should be noted that, as Figure 8 As shown, a portion of the substrate 11 remains on the first intermediate structure 16 that has been cut off. Exemplarily, the cutting of the substrate 11 includes, but is not limited to, using wire cutting and / or laser cutting processes to ensure cutting accuracy and avoid trace element contamination from the cutting tool during traditional tool cutting.

[0113] S104: As Figure 10 As shown, the cut surface of the first intermediate structure 16 is processed to expose the protruding structure 12 and the gap 14 between the protruding structure 12 and the silicon carbide coating 13, forming the second intermediate structure 17.

[0114] Specifically, as described above, near the protruding structure 12 and on the surface of the substrate 11 adjacent to the protruding structure 12, there are gaps 14 that are not filled by the silicon carbide coating 13. After cutting and grinding the cut surface of the first intermediate structure 16, the remaining portion of the substrate 11 is removed, thus exposing the protruding structure 12 and the gaps 14 between the protruding structure 12 and the silicon carbide coating 13. Figure 9 As shown in (b), the example of an inverted "V" shaped hole in the gap portion 14 is explained.

[0115] S105: As Figure 11 As shown, a silicon carbide coating 13 is formed based on the second intermediate structure 17, covering the protruding structure 12 and filling the gap portion 14 to form a third intermediate structure 18.

[0116] Optionally, the shape of the protrusion structure 12 includes, but is not limited to, a cylindrical, conical, trapezoidal, or stepped shape. It should be noted that when the shape of the protrusion structure 12 is conical, a little more needs to be cut at the top in this step to flatten the top of the conical protrusion structure 12.

[0117] Specifically, a secondary silicon carbide coating 13 is deposited, such as... Figure 9As shown in (b), during the secondary deposition of the silicon carbide coating 13, the inverted "V"-shaped pores formed in the silicon carbide coating 13 enveloping the protrusion structure 12 are exposed to the reaction atmosphere of the CVD process. Therefore, during the secondary deposition of the silicon carbide coating 13, the pores are filled by the silicon carbide coating 13, thus forming a pore-free silicon carbide plate (i.e., the third intermediate structure 18). After processing the silicon carbide plate after the secondary deposition of the silicon carbide coating 13, a uniform and dense silicon carbide plate can be formed, such as... Figure 9 As shown in (c), the protruding structure 12 is completely enveloped by the silicon carbide coating 13.

[0118] The technical solution of this application improves the quality of the silicon carbide coating 13 by gradually processing the cut structure and filling the gap 14 between the first-deposited silicon carbide coating 13 and the raised structure 12 by combining a second-deposited silicon carbide coating 13. This results in a silicon carbide plate with uniform thickness and dense structure (i.e., the third intermediate structure 18).

[0119] S106: As Figure 12 As shown, the third intermediate structure 18 is processed to expose the two ends of the protruding structure in the first direction X, forming the fourth intermediate structure 19.

[0120] Specifically, this technical solution completely eliminates the need for drilling holes in the silicon carbide plate during the fabrication of the silicon carbide grid, resulting in a silicon carbide grid that meets the technical design requirements. For example... Figure 12 As shown, in this embodiment of the invention, the silicon carbide plate enclosing the protrusion structure 12 is first cut and ground to meet the design requirements of having a thickness close to or equal to the grid thickness, and the enclosing protrusion structure 12 is completely exposed on the surface of the silicon carbide plate.

[0121] S107: As Figure 13 and Figure 14 As shown, the protruding structure 12 is removed based on the fourth intermediate structure 19 to form a silicon carbide grid 20.

[0122] Specifically, one possible way to form the silicon carbide gate 20 by removing the protrusion structure 12 based on the fourth intermediate structure 19 is as follows:

[0123] The fourth intermediate structure 19 is subjected to at least one high-temperature treatment and surface treatment to remove the protruding structure 12 and form the silicon carbide grid 20.

[0124] In one possible implementation, taking a graphite protrusion structure 12 as an example, the process of performing at least one high-temperature treatment and surface treatment on the fourth intermediate structure 19 includes:

[0125] The fourth intermediate structure 19 is heated to a temperature range of 800℃-1800℃ so that the surface structure of the fourth intermediate structure 19 is oxidized into a SiO2 surface and the protruding structure 12 of the graphite material is oxidized and burned off. Then, the SiO2 surface is etched off at room temperature using an acid solution containing HF to form the silicon carbide grid 20.

[0126] In other words, then Figure 12 The silicon carbide plate shown (i.e., the fourth intermediate structure 19) was subjected to long-term high-temperature oxidation treatment in a high-temperature environment (800℃-1800℃).

[0127] Specifically, the silicon carbide plate (i.e., the fourth intermediate structure 19) is subjected to a high-temperature isothermal oxidation treatment, optionally in the temperature range of 900℃-1800℃, or preferably in the temperature range of 1200℃-1600℃, for a prolonged period. The high-temperature oxidation time is optionally greater than 2 hours, optionally optimized to be greater than 6 hours; or optionally optimized to be greater than 10 hours. This causes the damaged silicon carbide grains on the machined surface of the silicon carbide plate (i.e., the fourth intermediate structure 19) to undergo an oxidation transformation, forming a SiO2 surface layer.

[0128] Furthermore, the graphite protrusions 12 exposed to high temperatures will be oxidized and burned off. After sintering and oxidation, the graphite turns into CO and / or CO2 gases, which are then released, causing a reduction in the volume or size of the graphite protrusions 12. Figure 13 As shown. Then, an acid solution containing HF is used at room temperature to etch away the SiO2 surface layer, removing the damaged silicon carbide grain surface structure caused by machining on the silicon carbide plate (i.e., the fourth intermediate structure 19), which helps to eliminate the danger of particles generated by the damaged silicon carbide grains in the plasma environment. In an optional embodiment of the present invention, ultrasonic vibration can also be used to remove the residual protrusion structure 12.

[0129] It should be noted that, in the embodiments of the present invention, at least one or more high-temperature oxidation burn-off and room-temperature etching processes can be performed to completely eliminate the machining damage on the surface of the silicon carbide plate (i.e., the fourth intermediate structure 19), and to completely burn off, etch, and vibrate to remove the protruding structure 12 of the graphite material, so as to form a high-quality silicon carbide grid 20, such as... Figure 14 As shown.

[0130] In another possible implementation, taking a graphite protrusion structure 12 as an example, the process of performing at least one high-temperature treatment and surface treatment on the fourth intermediate structure 19 includes:

[0131] The fourth intermediate structure 19 is heated to a temperature range of 800℃-1800℃, and its surface structure is removed by gas corrosion in an environment containing corrosive gases.

[0132] The fourth intermediate structure 19 is heated to a temperature range of 800℃-1800℃ so that the surface of the fourth intermediate structure 19 is oxidized into a SiO2 surface and the protrusion structure 12 is oxidized and burned off. Then, the SiO2 surface is etched off at room temperature using an acid solution containing HF to form the silicon carbide gate 20.

[0133] In other words, then Figure 12 The silicon carbide plate shown (i.e., the fourth intermediate structure 19) was subjected to long-term high-temperature corrosion and high-temperature oxidation treatment in a high-temperature environment (800℃-1800℃).

[0134] In an optional embodiment of the present invention, the silicon carbide plate (i.e., the fourth intermediate structure 19) is subjected to a high temperature, optionally in the temperature range of 900℃-1800℃, or preferably in the temperature range of 1200℃-1600℃, for a prolonged high-temperature isothermal etching process. The high-temperature etching gas can preferably be Cl2, HBr, etc. The high-temperature etching time can optionally be greater than 2 hours, preferably greater than 6 hours; or preferably greater than 10 hours. This allows the damaged silicon carbide grains on the machined surface of the silicon carbide plate (i.e., the fourth intermediate structure 19) to be etched away during the high-temperature isothermal process. Using a corrosive gas for high-temperature etching helps to accelerate the etching removal rate of the damaged silicon carbide grains on the surface of the silicon carbide plate (i.e., the fourth intermediate structure 19).

[0135] Then, a high-temperature oxidation treatment is performed to form a SiO2 surface layer on the silicon carbide plate. Simultaneously, the graphite protrusions 12 exposed to the high-temperature environment are oxidized and burned off. After sintering and oxidation, the graphite turns into CO and / or CO2 gas, which is then released, causing a reduction in the volume or size of the graphite protrusions 12. Figure 13 As shown. Then, an acid solution containing HF is used at room temperature to etch away the SiO2 surface layer, removing the damaged silicon carbide grain surface structure caused by machining on the silicon carbide plate (i.e., the fourth intermediate structure 19), which helps to eliminate the danger of particles generated by the damaged silicon carbide grains in the plasma environment. In an optional embodiment of the present invention, ultrasonic vibration can also be used to remove the residual protrusion structure 12.

[0136] It should be noted that, in the embodiments of the present invention, at least one or more high-temperature oxidation burn-off and room-temperature etching processes can be performed to completely eliminate the machining damage on the surface of the silicon carbide plate (i.e., the fourth intermediate structure 19), and to thoroughly burn off, etch, and vibrate to remove the protruding structures, thereby forming a high-quality silicon carbide grid, such as... Figure 14 As shown.

[0137] In an optional embodiment of the present invention, the method for preparing the silicon carbide gate further includes:

[0138] The silicon carbide grid 20 is chemically cleaned to obtain a silicon carbide grid 20 with a stable surface structure.

[0139] In summary, the process provided by the embodiments of the present invention can effectively eliminate the unstable structure of the machined surface of silicon carbide, improve the structural stability of the silicon carbide gate 20 in semiconductor process applications, and reduce the risk of particulate and trace contamination.

[0140] Based on the above embodiments of the present invention, another embodiment of the present invention also provides a silicon carbide gate, wherein the silicon carbide gate 20 is obtained by the silicon carbide gate preparation method described in any of the above embodiments.

[0141] Based on the above embodiments of the present invention, another embodiment of the present invention also provides an ion source device, the ion source device including the silicon carbide grid 20 described in the above embodiments.

[0142] Based on the above embodiments of the present invention, another embodiment of the present invention also provides a semiconductor device, the semiconductor device including the silicon carbide gate 20 described in the above embodiments.

[0143] The semiconductor equipment mentioned above includes semiconductor equipment and coating equipment that use ion source devices.

[0144] The present invention, through the design and processing of the substrate 11 including but not limited to CVD coating processes, cutting methods, and advanced post-processing processes such as secondary coating, simplifies the preparation process of silicon carbide gate 20, solves the problem of large-area perforation of silicon carbide gate 20, improves the quality of silicon carbide gate 20, increases the production efficiency of silicon carbide gate 20, and reduces costs.

[0145] This invention, by applying an ion source equipped with a silicon carbide gate 20, can effectively reduce and eliminate trace metal element contamination and particulate contamination in the IBS process based on IBE / FSE technology, improve the process stability of semiconductor equipment equipped with an ion source in different chip processing processes, extend the MTBC (Mean Time Between Cycles) cycle time of processes such as IBS, and further improve the production efficiency of semiconductor equipment in chip processing.

[0146] Silicon carbide gate 20 possesses high purity, high hardness, and excellent resistance to plasma etching. High-purity silicon carbide gate 20 does not introduce trace metal contamination in processes such as IBE, FSE, IBD (Ion Beam Deposition), IBAD (Ion Beam Assisted Deposition), and Ion Implantation. This effectively eliminates the trace metal contamination problems associated with using metal gates such as Mo in current IBS equipment, as well as the particulate contamination problems introduced by graphite gates. Furthermore, even in processes containing corrosive gases such as Cl, F, and Br, silicon carbide gate 20 is less prone to forming non-volatile particulate contamination during etching. Combining these material properties, silicon carbide gate 20 prepared using CVD processes can effectively improve process stability and increase production efficiency in related manufacturing processes such as IBE, FSE, IBD, IBAD, and Ion Implantation.

[0147] The foregoing has provided a detailed description of a silicon carbide gate and its preparation method, ion source device, and semiconductor equipment provided by the present invention. Specific examples have been used to illustrate the principles and implementation methods of the present invention. The descriptions of the above embodiments are only for the purpose of helping to understand the method and core ideas of the present invention. At the same time, for those skilled in the art, there will be changes in the specific implementation methods and application scope based on the ideas of the present invention. Therefore, the content of this specification should not be construed as a limitation of the present invention.

Claims

1. A method for preparing a silicon carbide grid, characterized in that, The method for preparing the silicon carbide grid includes: A substrate is provided; the substrate includes a first surface and a second surface disposed opposite to each other in a first direction, the first surface and the second surface respectively having a plurality of spaced-apart protrusions; the position of the protrusions is determined based on the mesh openings; the first direction is parallel to the length extension direction of the protrusions; A silicon carbide coating is formed on the substrate; the silicon carbide coating completely covers the protruding structure; The substrate is cut along the direction of the plane in which the substrate is located to form a first intermediate structure; The cut surface of the first intermediate structure is processed to expose the protruding structure and the gap between the protruding structure and the silicon carbide coating, forming a second intermediate structure; A silicon carbide coating is formed based on the second intermediate structure, covering the protruding structure and filling the voids to form a third intermediate structure; The third intermediate structure is processed to expose the two ends of the protruding structure in the first direction, forming a fourth intermediate structure; The protruding structure is removed based on the fourth intermediate structure to form a silicon carbide grid.

2. The method for preparing a silicon carbide grid according to claim 1, characterized in that, Forming a silicon carbide coating includes: The silicon carbide coating is formed using a CVD process.

3. The method for preparing a silicon carbide grid according to claim 1, characterized in that, The formation of the silicon carbide coating based on the CVD process includes: Based on silicon-containing and carbon-containing reaction gases, the silicon carbide coating is deposited using a CVD process under an environment with a target flow rate of Ar or H2 carrier gas and a temperature of 1200℃-2000℃.

4. The method for preparing a silicon carbide grid according to claim 3, characterized in that, The silicon-containing reaction gas includes SiH4 gas, SiCl4 gas, or MTS; the carbon-containing reaction gas includes C2H2 gas, C3H8 gas, CH4 gas, or C2H4 gas.

5. The method for preparing a silicon carbide grid according to claim 2, characterized in that, The formation of the silicon carbide coating based on the CVD process includes: Based on the CVD process, the doping amount of elements in the CVD process is controlled to deposit a silicon carbide coating with a target resistivity.

6. The method for preparing a silicon carbide grid according to claim 5, characterized in that, The resistivity of the silicon carbide coating is less than 2000 Ω·cm.

7. The method for preparing a silicon carbide grid according to claim 5, characterized in that, The resistivity of the silicon carbide coating is less than 20 Ω·cm.

8. The method for preparing a silicon carbide grid according to claim 5, characterized in that, The resistivity of the silicon carbide coating is less than 0.1 Ω·cm.

9. The method for preparing a silicon carbide grid according to claim 1, characterized in that, The process of forming a silicon carbide coating on the substrate includes: A silicon carbide coating with a thickness at least greater than the height of the protrusion structure is formed on the substrate.

10. The method for preparing a silicon carbide grid according to claim 1, characterized in that, The process of forming a silicon carbide coating on the substrate includes: A silicon carbide coating is formed on a graphite substrate.

11. The method for preparing a silicon carbide grid according to claim 10, characterized in that, When the substrate is a graphite substrate, the thickness of the graphite substrate ranges from 1mm to 50mm.

12. The method for preparing a silicon carbide grid according to claim 10, characterized in that, When the substrate is a graphite substrate, the (0001) carbon crystal plane orientation of the graphite crystal is selected as the substrate surface.

13. The method for preparing a silicon carbide grid according to claim 10, characterized in that, When the substrate is a graphite substrate, the method for preparing the silicon carbide grid before forming a silicon carbide coating on the substrate further includes: The target gas is introduced for purification during the heating process in the target high-temperature environment.

14. The method for preparing a silicon carbide grid according to any one of claims 1-13, characterized in that, The process of removing the protruding structure based on the fourth intermediate structure to form a silicon carbide gate includes: The fourth intermediate structure is subjected to at least one high-temperature treatment and surface treatment to remove the protruding structure and form the silicon carbide grid.

15. The method for preparing a silicon carbide grid according to claim 14, characterized in that, The process of performing at least one high-temperature treatment and surface treatment on the fourth intermediate structure includes: The fourth intermediate structure is heated to a temperature range of 800℃-1800℃ to oxidize the surface structure of the fourth intermediate structure into a SiO2 surface and oxidize the protruding structure. Then, the SiO2 surface is etched away at room temperature using an acid solution containing HF to form the silicon carbide gate.

16. The method for preparing a silicon carbide grid according to claim 14, characterized in that, The process of performing at least one high-temperature treatment and surface treatment on the fourth intermediate structure includes: The fourth intermediate structure is heated to a temperature range of 800℃-1800℃, and its surface structure is removed by gas corrosion in an environment containing corrosive gases. The fourth intermediate structure is heated to a temperature range of 800℃-1800℃ to oxidize the surface of the fourth intermediate structure into a SiO2 surface and oxidize the protruding structure. Then, the SiO2 surface is etched away at room temperature using an acid solution containing HF to form the silicon carbide gate.

17. The method for preparing a silicon carbide grid according to claim 15 or 16, characterized in that, The method for preparing the silicon carbide grid further includes: The silicon carbide grid is subjected to chemical cleaning treatment.

18. The method for preparing a silicon carbide grid according to claim 1, characterized in that, The step of cutting the substrate along the plane of the substrate to form the first intermediate structure includes: The substrate is cut along the plane of the substrate to form two pieces of the first intermediate structure.

19. The method for preparing a silicon carbide grid according to claim 1, characterized in that, The protruding structure is cylindrical, conical, trapezoidal, or stepped.

20. A silicon carbide grid, characterized in that, The silicon carbide grid is obtained by the method for preparing the silicon carbide grid according to any one of claims 1-19.

21. An ion source device, characterized in that, The ion source device includes the silicon carbide grid as described in claim 20.

22. A semiconductor device, characterized in that, The semiconductor device includes the silicon carbide gate as described in claim 20.

23. The semiconductor device according to claim 22, characterized in that, The semiconductor device is a semiconductor device that uses an ion source device.

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