Conductive device and laser-assisted sintering apparatus

Abstract

The application relates to a conductive device and a laser-assisted sintering equipment, the conductive device is applied to a solar cell, the conductive device comprises a mounting piece, a probe assembly and a plurality of conductive modules; the probe assembly comprises a plurality of probes which are arranged at intervals along a first preset direction and are penetrated on the mounting piece, and the probes are used for directly electrically connecting with auxiliary grid lines of the solar cell; the plurality of conductive modules are arranged at intervals on the mounting piece; the plurality of conductive modules are connected in one-to-one correspondence with the plurality of probes, and the conductive module is used for controlling a bias voltage loaded to the corresponding probe. In this way, the plurality of probes can be directly electrically connected with the plurality of auxiliary grid lines of the solar cell, the bias voltage on each auxiliary grid line is positively correlated with the conductive resistance thereof, the joule heat generated by the local current flowing through each auxiliary grid line is beneficial to sintering of the auxiliary grid line, so that the plurality of auxiliary grid lines on the solar cell can form good contact with a semiconductor layer of the solar cell, and the conversion efficiency of the solar cell can be improved.

Description

[0001] This application is a divisional application of application number 202411774636.1 (Invention title: Solar cell and its preparation method, conductive device and laser-assisted sintering equipment; application date: December 5, 2024). Technical Field

[0002] This application relates to the field of photovoltaic technology, and in particular to conductive devices and laser-assisted sintering equipment. Background Technology

[0003] The contact resistance between the surface electrode and the back electrode of a solar cell has a significant impact on the cell's conversion efficiency; the lower the metal-semiconductor contact resistance, the higher the conversion efficiency. Currently, the main method to reduce metal-semiconductor contact resistance is Laser Enhanced Contact Optimization (LECO), also known as laser-assisted sintering. This process involves irradiating the photovoltaic cell with a high-intensity laser to excite charge carriers and applying a deflection voltage to separate these carriers, creating a localized current that initiates sintering, thereby reducing the contact resistance between the metal and the semiconductor.

[0004] However, in related technologies, when performing the LECO process on solar cells, problems such as over-burning and under-burning of the grid lines are prone to occur. This results in significant differences in the contact effect between the grid lines and the semiconductor layer in different regions of the solar cell, which greatly limits the improvement of the conversion efficiency of solar cells by the LECO process. Summary of the Invention

[0005] Based on this, this application provides a solar cell and its preparation method, conductive device and laser-assisted sintering equipment, so that multiple sub-grid lines of the solar cell can form good contact with the semiconductor layer, thereby improving the conversion efficiency of the solar cell.

[0006] An embodiment of the first aspect of this application provides a method for fabricating a solar cell, comprising:

[0007] A grid pattern is formed on the battery body, the grid pattern comprising N parallel and spaced sub-grid lines;

[0008] A bias voltage is applied to N sub-gate lines, wherein the bias voltage on each sub-gate line is positively correlated with its conductivity resistance;

[0009] Laser-assisted sintering is performed on the N sub-gate lines.

[0010] The solar cell fabrication method provided in this application involves applying a bias voltage to N sub-grid lines, ensuring that the bias voltage on each sub-grid line is positively correlated with its conductivity resistance, and then performing laser-assisted sintering on the N sub-grid lines. In other words, a corresponding bias voltage is applied to each sub-grid line based on its conductivity resistance, so that the Joule heat generated by the local current flowing through each sub-grid line is beneficial to the sintering of the sub-grid lines. This allows all N sub-grid lines to form good contact with the semiconductor layer of the cell body, thereby improving the conversion efficiency of the solar cell.

[0011] In one embodiment, the step of applying a bias voltage to the N sub-gate lines includes:

[0012] The N sub-grid lines are equally divided into M grid line groups along a first direction. The conductivity of all sub-grid lines in each grid line group falls within the same first preset range. The difference in average conductivity of two adjacent grid line groups falls within a second preset range. The average conductivity of a grid line group is the average conductivity of all sub-grid lines in the grid line group. The first direction is perpendicular to the thickness direction of the battery body and is also perpendicular to the extension direction of the sub-grid lines.

[0013] A bias voltage is applied to M gate line groups, and the bias voltage on each gate line group is positively correlated with the average conductivity resistance of that gate line group.

[0014] In one embodiment, the step of applying a bias voltage to the N sub-gate lines includes:

[0015] The N sub-gate lines are equally divided into M gate line groups along a first direction. The linewidth of all the sub-gate lines in each gate line group falls within the same third preset range. The difference in the average linewidth of two adjacent gate line groups falls within a fourth preset range. The average linewidth of the gate line group is the average of the linewidths of all the sub-gate lines in the gate line group. The first direction is perpendicular to the thickness direction of the battery body and perpendicular to the extension direction of the sub-gate lines.

[0016] A bias voltage is applied to M gate line groups. The bias voltage on each gate line group is positively correlated with the average conductivity resistance of the gate line group and negatively correlated with the average linewidth of the gate line group. The average conductivity resistance of the gate line group is the average value of the conductivity resistance of all the sub-gate lines in the gate line group.

[0017] In one embodiment, the step of performing laser-assisted sintering on the N sub-gate lines includes:

[0018] The N sub-gate lines are irradiated with a laser to sinter them.

[0019] In one embodiment, the power of the laser is between 9W and 15W.

[0020] An embodiment of the second aspect of this application provides a solar cell prepared by the preparation method described in any of the above embodiments. This improves the conversion efficiency of the solar cell.

[0021] An embodiment of the third aspect of this application provides a conductive device applied to a solar cell, comprising:

[0022] Installation components;

[0023] The probe assembly includes a plurality of probes arranged at intervals along a first preset direction and passing through the mounting member, the probes being used for electrical connection with the sub-grid lines of the solar cell;

[0024] Multiple conductive modules are spaced apart on the mounting component; each conductive module is connected to a corresponding probe, and the conductive module is used to control the bias voltage applied to the corresponding probe.

[0025] The conductive device provided in this application embodiment includes a mounting component, a probe assembly, and multiple conductive modules. The probe assembly comprises multiple probes spaced apart along a first preset direction and passing through the mounting component. The multiple conductive modules are connected one-to-one with the multiple probes. In this way, during laser-assisted sintering of the solar cell, the first preset direction can be perpendicular to the thickness direction of the solar cell and perpendicular to the extension direction of the sub-grid lines. That is, the first preset direction is parallel to or coincides with the first direction. This facilitates the electrical connection between the multiple probes and the multiple sub-grid lines of the solar cell. Based on the conductivity resistance of the sub-grid lines, the bias voltage applied to the corresponding probe is controlled by the conductive modules. This ensures that the bias voltage on each sub-grid line is positively correlated with its conductivity resistance, so that the Joule heat generated by the local current flowing through each sub-grid line is beneficial to the sintering of the sub-grid lines. Consequently, the multiple sub-grid lines on the solar cell can form good contact with the semiconductor layer of the solar cell, thereby improving the conversion efficiency of the solar cell.

[0026] In one embodiment, the conductive module includes a conductive element and a voltage control module. The conductive element is connected to the corresponding probe. The voltage control module is electrically connected to the conductive element and is used to control the bias voltage applied to the corresponding probe.

[0027] In one embodiment, the conductive element includes a conductive block disposed within the mounting element, the conductive block having a mounting hole thereon, and the probe passing through the mounting hole;

[0028] The voltage control module includes a voltage controller, which is mounted on the mounting component and connected to the conductive block.

[0029] In one embodiment, the probe includes a conductive connector and an abutment, the conductive connector being disposed on the mounting member, and the abutment extending along a first preset direction and connected to one end of the conductive connector; the abutment is used to abut against the sub-grid line or main grid line of the solar cell.

[0030] In one embodiment, the plurality of probes are arranged in a row along a first preset direction and in a column along a second preset direction that intersects with the first preset direction; two adjacent abutments along the second preset direction are arranged in an alternating manner along the first preset direction.

[0031] In one embodiment, the dimension of the abutment member along the first preset direction is L;

[0032] In two abutting members that are adjacent along the second preset direction and staggered along the first preset direction, the distance between the geometric center of one member and the geometric center of the other member in the first preset direction is S; 1 / 2L≤S<L.

[0033] In one embodiment, the plurality of probes are arranged at intervals along a first preset direction, and the distance between two adjacent abutments is less than the first preset distance.

[0034] In one embodiment, the first preset spacing is 0.2mm-2mm.

[0035] In one embodiment, the dimension of the abutment member along the first preset direction is L, where 10mm ≤ L ≤ 26.25mm.

[0036] In one embodiment, the conductive connector includes a plurality of conductive rods, which are distributed in parallel at intervals and pass through the mounting member, and the plurality of conductive rods are connected to the abutment member.

[0037] An embodiment of the fourth aspect of this application provides a laser-assisted sintering apparatus for performing laser-assisted sintering processing on solar cells, including:

[0038] The conductive device described in any of the above embodiments;

[0039] A conductive support device is used to support the solar cell; and the conductive support device is also used to be electrically connected to the solar cell.

[0040] The laser-assisted sintering equipment provided in this application includes a conductive device and a conductive support device as described in any of the above embodiments. The conductive device includes a mounting component, a probe assembly, and multiple conductive modules. The probe assembly includes multiple probes spaced apart along a first preset direction and passing through the mounting component. The multiple conductive modules are connected one-to-one with the multiple probes. Thus, during laser-assisted sintering of the solar cell, the conductive support device carries the solar cell and is electrically connected to it. The multiple probes are electrically connected to multiple sub-grid lines of the solar cell to apply a bias voltage to the solar cell. Based on the conductivity resistance of the sub-grid lines, the conductive modules control the bias voltage applied to the corresponding probes, thereby ensuring that the bias voltage on each sub-grid line is positively correlated with its conductivity resistance. This ensures that the Joule heat generated by the local current flowing through each sub-grid line is beneficial for the sintering of the sub-grid lines, and consequently, that multiple sub-grid lines on the solar cell can form good contact with the semiconductor layer of the solar cell, thereby improving the conversion efficiency of the solar cell. Attached Figure Description

[0041] Figure 1 This is a flowchart of a method for fabricating a solar cell provided in one embodiment of this application.

[0042] Figure 2 This is a schematic diagram of the structure of a conductive device provided in one embodiment of this application.

[0043] Figure 3 This is a schematic diagram of the conductive device provided in one embodiment of this application from another perspective.

[0044] Figure 4 This is a schematic diagram showing the distribution of multiple abutting members in a conductive device provided in one embodiment of this application.

[0045] Figure 5 This is a schematic diagram showing another distribution of multiple abutting members in a conductive device provided in one embodiment of this application.

[0046] Figure 6 This is a partial structural schematic diagram of a laser-assisted sintering device provided in one embodiment of this application.

[0047] Explanation of reference numerals in the attached figures:

[0048] 10. Conductive device; 11. Mounting component; 12. Probe assembly; 121. Probe; 1211. Conductive connector; 1211a. Conductive rod; 1212. Abutment component; 13. Conductive module; 20. Conductive support device; 30. Solar cell; 31. Main grid line; 32. Sub-grid line; X, first preset direction; Y, second preset direction. Detailed Implementation

[0049] To make the above-mentioned objectives, features, and advantages of this application more apparent and understandable, the specific embodiments of this application are described in detail below with reference to the accompanying drawings. Many specific details are set forth in the following description to provide a thorough understanding of this application. However, this application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar modifications without departing from the spirit of this application. Therefore, this application is not limited to the specific embodiments disclosed below.

[0050] In the description of this application, it should be understood that if terms such as "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential" appear, these terms indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application.

[0051] Furthermore, where the terms "first" and "second" appear, these terms are for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined with "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this application, where the term "multiple" appears, "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0052] In this application, unless otherwise expressly specified and limited, the terms "installation," "connection," "joining," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components, unless otherwise expressly limited. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0053] In this application, unless otherwise expressly specified and limited, the use of descriptions such as "above" or "below" the second feature indicates that the first and second features are in direct contact or indirect contact via an intermediate medium. Furthermore, "above," "on top of," and "over" the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. Similarly, "below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.

[0054] It should be noted that if an element is referred to as being "fixed to" or "set on" another element, it can be directly on the other element or there may be an intervening element. If an element is considered to be "connected to" another element, it can be directly connected to the other element or there may be an intervening element. If so, the terms "vertical," "horizontal," "upper," "lower," "left," "right," and similar expressions used in this application are for illustrative purposes only and do not represent the only possible implementation.

[0055] The contact resistance between the surface electrode and the back electrode of a solar cell has a significant impact on the cell's conversion efficiency; the lower the metal-semiconductor contact resistance, the higher the conversion efficiency. Currently, the main method to reduce metal-semiconductor contact resistance is Laser Enhanced Contact Optimization (LECO), also known as laser-assisted sintering. This process involves irradiating the photovoltaic cell with a high-intensity laser to excite charge carriers and applying a deflection voltage to separate these carriers, creating a localized current that initiates sintering, thereby reducing the contact resistance between the metal and the semiconductor.

[0056] However, in related technologies, when performing the LECO process on solar cells, problems such as over-burning and under-burning of the grid lines are prone to occur. This results in significant differences in the contact effect between the grid lines and the semiconductor layer in different regions of the solar cell, which greatly limits the improvement of the conversion efficiency of solar cells by the LECO process.

[0057] To address the aforementioned technical issues, this application provides a solar cell and its fabrication method, conductive device, and laser-assisted sintering equipment, enabling multiple sub-grid lines of the solar cell to form good contact with the semiconductor layer, thereby improving the conversion efficiency of the solar cell.

[0058] See Figure 1 In a first aspect, embodiments of this application provide a method for preparing a solar cell, comprising:

[0059] S10. A grid pattern is formed on the battery body, the grid pattern including N sub-grid lines arranged in parallel at intervals;

[0060] S20. Apply a bias voltage to N sub-gate lines, wherein the bias voltage on each sub-gate line is positively correlated with its conductivity resistance.

[0061] Specifically, the conductivity resistance of the sub-gate line can be obtained through multiple experiments.

[0062] S30. Perform laser-assisted sintering on N sub-grid lines.

[0063] The solar cell fabrication method provided in this application involves applying a bias voltage to N sub-grid lines, ensuring that the bias voltage on each sub-grid line is positively correlated with its conductivity resistance, and then performing laser-assisted sintering on the N sub-grid lines. In other words, a corresponding bias voltage is applied to each sub-grid line based on its conductivity resistance, so that the Joule heat generated by the local current flowing through each sub-grid line is beneficial to the sintering of the sub-grid lines. This allows all N sub-grid lines to form good contact with the semiconductor layer of the cell body, thereby improving the conversion efficiency of the solar cell.

[0064] Understandably, solar cells can be TOPCon cells (tunneling layer passivated contact cells). Of course, solar cells are not limited to TOPCon cells; they can also be BC cells (back contact cells).

[0065] Taking a TOPCon solar cell as an example, the main body of the solar cell includes a substrate, a tunneling layer, a doped polycrystalline silicon layer, a first functional layer, an emitter, and a second functional layer. The tunneling layer is disposed on a first side of the substrate. The doped polycrystalline silicon layer is disposed on the tunneling layer, and the first functional layer is disposed on the doped polycrystalline silicon layer. The emitter is disposed on a second side of the substrate. The second functional layer is disposed on the emitter. The first and second functional layers can be, but are not limited to, passivation layers, antireflection layers, etc. The material of the passivation layer can be, but is not limited to, one or more of aluminum oxide films. The material of the antireflection layer can be, but is not limited to, one or more of silicon nitride films. Grid line paste is disposed on the first and second functional layers to form a grid line pattern on the main body of the cell. Using the above preparation method, multiple sub-grid lines passing through the first functional layer form good contact with the doped polycrystalline silicon layer, and multiple sub-grid lines passing through the second functional layer form good contact with the emitter, thereby improving the conversion efficiency of the TOPCon solar cell.

[0066] In one embodiment, S20 involves applying a bias voltage to the N sub-gate lines, specifically including:

[0067] The N sub-grid lines are equally divided into M grid line groups along the first direction. The conductivity of all sub-grid lines in each grid line group falls within the same first preset range. The difference in average conductivity of two adjacent grid line groups falls within a second preset range. The average conductivity of the grid line group is the average conductivity of all sub-grid lines in the grid line group. The first direction is perpendicular to the thickness direction of the battery body and perpendicular to the extension direction of the sub-grid lines.

[0068] A bias voltage is applied to M gate line groups, and the bias voltage on each gate line group is positively correlated with the average conductivity resistance of that gate line group.

[0069] In the above process, the N sub-grid lines are divided into M grid line groups along the first direction according to their conductivity resistance. The conductivity resistance of all sub-grid lines in each grid line group falls within the same first preset range, and the difference in average conductivity resistance between two adjacent grid line groups falls within a second preset range. By applying a bias voltage to the M grid line groups, the bias voltage on each grid line group is positively correlated with the average conductivity resistance of that grid line group. This makes the bias voltage applied to each sub-grid line positively correlated with its conductivity resistance, so that the Joule heat generated by the local current flowing through each sub-grid line is beneficial to the sintering of the sub-grid lines. This allows all N sub-grid lines to form good contact with the semiconductor layer of the cell body, thereby improving the conversion efficiency of the solar cell. In addition, by dividing the N sub-grid lines into M grid line groups and applying a bias voltage to the M grid line groups, the number of bias voltage parameters that need to be adjusted can be reduced, the difficulty of bias voltage adjustment can be reduced, and it is easy to achieve a positive correlation between the bias voltage and the conductivity resistance of each sub-grid line. This makes it easy to ensure that all N sub-grid lines form good contact with the semiconductor layer of the cell body, which is beneficial to improving the conversion efficiency of the solar cell.

[0070] In one embodiment, S20 involves applying a bias voltage to the N sub-gate lines, specifically including:

[0071] The N sub-grid lines are divided into M grid line groups along the first direction. The line width of all sub-grid lines in each grid line group falls within the same third preset range. The difference in the average line width of two adjacent grid line groups falls within a fourth preset range. The average line width of the grid line group is the average of the line widths of all sub-grid lines in the grid line group. The first direction is perpendicular to the thickness direction of the battery body and perpendicular to the extension direction of the sub-grid lines.

[0072] A bias voltage is applied to M gate line groups. The bias voltage on each gate line group is positively correlated with the average conductivity resistance of the gate line group and negatively correlated with the average linewidth of the gate line group. The average conductivity resistance of the gate line group is the average value of the conductivity resistance of all sub-gate lines in the gate line group.

[0073] In the above process, the N sub-grid lines are divided into M grid line groups along the first direction according to the linewidth of the sub-grid lines. The linewidth of all sub-grid lines in each grid line group falls within the same third preset range, and the difference in the average linewidth of two adjacent grid line groups falls within a fourth preset range. By applying a bias voltage to the M grid line groups, the bias voltage on each grid line group is positively correlated with the average conductivity resistance of the grid line group and negatively correlated with the average linewidth of the grid line group. This makes the bias voltage applied to each sub-grid line positively correlated with the conductivity resistance, so that the Joule heat generated by the local current flowing through each sub-grid line is beneficial to the sintering of the sub-grid lines. This allows the N sub-grid lines to form good contact with the semiconductor layer of the cell body, thereby improving the conversion efficiency of the solar cell. In addition, the linewidth of the sub-grid lines is easy to measure. Based on the linewidth of the sub-grid lines, the N sub-grid lines can be easily divided into M grid line groups. Applying a bias voltage to the M grid line groups can reduce the number of bias voltage parameters that need to be adjusted, reduce the difficulty of bias voltage adjustment, and make it easy to achieve a positive correlation between the bias voltage and the conductivity resistance of each sub-grid line. This makes it easy to ensure that all N sub-grid lines form good contact with the semiconductor layer of the cell body, which is beneficial to improving the conversion efficiency of the solar cell.

[0074] In one embodiment, S30 involves laser-assisted sintering of the N sub-gate lines, specifically including:

[0075] N sub-gate lines are irradiated with a laser to sinter them.

[0076] In the above process, laser irradiation is applied to N sub-grid lines. The laser heats the area where the sub-grid lines are located, exciting charge carriers. Under the action of bias voltage, a local current is generated. The local current flows through the sub-grid lines and generates Joule heat, causing the sub-grid lines to sinter. This allows the sub-grid lines to form good contact with the semiconductor layer of the solar cell body, reducing contact resistance and thus improving the conversion efficiency of the solar cell.

[0077] In one embodiment, the power of the laser is between 9W and 15W. Specifically, the power of the laser can be any value among 9W, 10W, 11W, 12W, 13W, 14W, 15W or between 9W and 15W, without any special limitation.

[0078] Secondly, embodiments of this application provide a solar cell prepared by the preparation method described in any of the above embodiments. This improves the conversion efficiency of the solar cell.

[0079] Thirdly, see Figures 2 to 4This application provides a conductive device 10 applied to a solar cell 30, including a mounting component 11, a probe assembly 12, and multiple conductive modules 13. The probe assembly 12 includes multiple probes 121 arranged at intervals along a first preset direction X and passing through the mounting component 11. The probes 121 are used to electrically connect with the sub-grid lines 32 of the solar cell 30. The multiple conductive modules 13 are spaced apart on the mounting component 11. The multiple conductive modules 13 are connected to the multiple probes 121 in a one-to-one correspondence. The conductive modules 13 are used to control the bias voltage applied to the corresponding probes 121.

[0080] The conductive device 10 provided in this application embodiment, by setting a mounting component 11, a probe assembly 12, and multiple conductive modules 13, makes the probe assembly 12 include multiple probes 121 arranged at intervals along a first preset direction X and passing through the mounting component 11. The multiple conductive modules 13 are connected one-to-one with the multiple probes 121. In this way, when performing laser-assisted sintering on the solar cell 30, the first preset direction X can be made perpendicular to the thickness direction of the solar cell 30 and perpendicular to the extension direction of the sub-grid line 32. That is, the first preset direction X is parallel to or coincides with the first direction. In this way, the multiple probes 121 can be made perpendicular to the first direction X. 1. The N sub-grid lines 32 on the solar cell 30 are arranged at intervals, which facilitates the electrical connection of multiple probes 121 to the N sub-grid lines 32 of the solar cell 30. According to the conductivity resistance of the sub-grid lines 32, the bias voltage applied to the corresponding probe 121 is controlled by the conductive module 13, so that the bias voltage on each sub-grid line 32 is positively correlated with its conductivity resistance. This makes the Joule heat generated by the local current flowing through each sub-grid line 32 beneficial to the sintering of the sub-grid lines 32. In turn, the N sub-grid lines 32 on the solar cell 30 can form good contact with the semiconductor layer of the solar cell 30, thereby improving the conversion efficiency of the solar cell 30.

[0081] It should be noted that the probe 121 is used to electrically connect with the sub-grid line 32 of the solar cell 30. This can be understood as the probe 121 being able to directly connect with the sub-grid line 32 of the solar cell 30, for example, the probe 121 being directly contacted and electrically connected with the sub-grid line 32 of the solar cell 30; or the probe 121 being able to indirectly connect with the sub-grid line 32 of the solar cell 30, for example, the probe 121 being directly contacted and electrically connected with the main grid line 31 that overlaps with the sub-grid line 32, thereby indirectly connecting with the sub-grid line 32.

[0082] In one embodiment, the conductive module 13 includes a conductive element (not shown in the figure) and a voltage control module (not shown in the figure). The conductive element is connected to a corresponding probe 121. The voltage control module is electrically connected to the conductive element and is used to control the bias voltage applied to the corresponding probe 121.

[0083] Thus, by setting up conductive components and a voltage control module, the conductive module 13 can be easily connected to the probe 121, and the conductive module 13 can easily control the bias voltage applied to the corresponding probe 121.

[0084] In one embodiment, the conductive element includes a conductive block (not shown in the figure), which is disposed within the mounting member 11 and has a mounting hole, through which the probe 121 passes; the voltage control module includes a voltage controller (not shown in the figure), which is disposed on the mounting member 11 and connected to the conductive block.

[0085] Thus, by setting a conductive block and a voltage controller, the conductive block is set inside the mounting part 11, and the conductive block is provided with a mounting hole for the probe 121 to pass through, so that the probe 121 can be easily installed on the mounting part 11, and the bias voltage applied to the probe 121 can be easily controlled by the voltage controller.

[0086] See Figure 2 and Figure 3 In one embodiment, the probe 121 includes a conductive connector 1211 and an abutment 1212. The conductive connector 1211 is disposed on the mounting member 11, and the abutment 1212 extends along a first preset direction X and is connected to one end of the conductive connector 1211. The abutment 1212 is used to abut against the sub-grid line 32 or the main grid line 31 of the solar cell 30.

[0087] Thus, by providing a conductive connector 1211 and abutment 1212, the conductive connector 1211 passes through the mounting member 11, making it convenient to pass the probe 121 through the mounting member 11; the abutment 1212 extends along the first preset direction X and is connected to one end of the conductive connector 1211, and the abutment 1212 is used to abut against the sub-grid line 32 or the main grid line 31 of the solar cell 30, thus facilitating the electrical connection between the probe 121 and the sub-grid line 32 so as to apply a bias voltage to the sub-grid line 32.

[0088] Understandably, the abutment 1212 is used to abut against the sub-grid line 32 or the main grid line 31 of the solar cell 30. That is, the abutment 1212 can directly abut against the sub-grid line 32 of the solar cell 30, and the probe 121 can be directly electrically connected to the sub-grid line 32 of the solar cell 30. The abutment 1212 can also abut against the main grid line 31 of the solar cell 30. The abutment 1212 is electrically connected to the sub-grid line 32 through the main grid line 31. That is, the probe 121 can be electrically connected to the sub-grid line 32 through the main grid line 31.

[0089] See Figure 4In one embodiment, a plurality of probes 121 are arranged in a row along a first preset direction X and in a column along a second preset direction Y that intersects with the first preset direction X; two adjacent abutting members 1212 along the second preset direction Y are arranged in an alternating manner along the first preset direction X.

[0090] When performing laser-assisted sintering on the solar cell 30, the N sub-grid lines 32 on the solar cell 30 can be divided into M grid groups according to the conductivity or linewidth of the sub-grid lines 32. The first preset direction X is parallel to the direction in which the N sub-grid lines 32 are spaced apart, and the second preset direction Y is parallel to the extension direction of the sub-grid lines 32. This allows multiple probes 121 to be arranged in rows along the direction in which the N sub-grid lines 32 are spaced apart, and in columns along the extension direction of the N sub-grid lines 32. Each probe 121 corresponds one-to-one with one of the M grid groups. Since two adjacent abutment members 1212 along the second preset direction Y are along the first preset direction X... The staggered arrangement allows each probe 121's contact 1212 to contact all sub-grid lines 32 in a grid group. In other words, each probe 121 can be electrically connected to all sub-grid lines 32 in a grid group. The bias voltage applied to the corresponding probe 121 is controlled by the conductive module 13 to be positively correlated with the average conductivity resistance of the grid group. This ensures that the bias voltage applied to each sub-grid line 32 is positively correlated with its conductivity resistance, making the Joule heat generated by the local current flowing through each sub-grid line 32 beneficial for the sintering of the sub-grid lines 32. Consequently, all N sub-grid lines 32 form good contact with the semiconductor layer of the solar cell 30, improving the conversion efficiency of the solar cell 30. Furthermore, when the solar cell 30 is a gridless solar cell 30, it ensures that all N sub-grid lines 32 on the gridless solar cell 30 form good contact with the semiconductor layer of the solar cell 30, avoiding the problem of striped EL defects in gridless solar cells 30.

[0091] See Figure 4 In one embodiment, the dimension of the abutment 1212 along the first preset direction X is L; among the two abutment members 1212 that are adjacent along the second preset direction Y and staggered along the first preset direction X, the distance between the geometric center of one and the geometric center of the other in the first preset direction X is S; 1 / 2L≤S<L.

[0092] In this way, it can be ensured that the contact part 1212 of each probe 121 abuts against all the sub-grid lines 32 in a grid line group, and each probe 121 can be electrically connected to all the sub-grid lines 32 in a grid line group. This allows all N sub-grid lines 32 on the solar cell 30 to form good contact with the semiconductor layer of the solar cell 30, improving the conversion efficiency of the solar cell 30. In addition, it can avoid the problem of striped EL defects in the solar cell 30 without a main grid.

[0093] In one embodiment, the abutment 1212 is configured as a rod-shaped structure, and the cross-section of the abutment 1212 is rectangular, triangular or circular.

[0094] See Figure 5 In one embodiment, a plurality of probes 121 are arranged at intervals along a first preset direction X, and the distance between two adjacent abutments 1212 is less than the first preset distance.

[0095] In this way, the first preset spacing corresponds to the spacing between two adjacent sub-grid lines 32. That is, the spacing between two adjacent contact members 1212 is smaller than the spacing between two adjacent sub-grid lines 32. This ensures that the contact member 1212 of each probe 121 contacts all sub-grid lines 32 in a grid group, and each probe 121 can be electrically connected to all sub-grid lines 32 in a grid group. This allows all N sub-grid lines 32 on the solar cell 30 to form good contact with the semiconductor layer of the solar cell 30, improving the conversion efficiency of the solar cell 30. In addition, it avoids the problem of striped EL defects in solar cells 30 without a main grid.

[0096] In one embodiment, the first preset spacing is 0.2mm-2mm. Specifically, the first preset spacing can be any value between 0.2mm, 0.4mm, 0.6mm, 0.8mm, 1.0mm, 1.2mm, 1.4mm, 1.6mm, 1.8mm, 2.0mm or 0.2mm-2mm, and there is no limitation thereto.

[0097] In one embodiment, the dimension of the abutment member 1212 along the first preset direction X is L, where 10mm≤L≤26.25mm.

[0098] Specifically, the spacing between adjacent sub-gate lines 32 is typically between 0.2mm and 2mm, and the number of fine gates ranges from tens to hundreds. In this embodiment, by making the dimension L of the abutment 1212 along the first preset direction X between 10mm and 26.25mm, one abutment 1212 can abut against several or even dozens of sub-gate lines 32. This reduces the number of abutment 1212 and conductive connector 1211, thereby reducing the cost of the conductive device 10.

[0099] In a specific example, L can be 10mm to 15mm, 15mm to 20mm, or 20mm to 26.25mm.

[0100] In a specific example, L can be 10mm, 12mm, 14mm, 16mm, 18mm, 20mm, 22mm, 24mm or 26mm.

[0101] In one embodiment, the distance K between two adjacent abutting members 1212 along the second preset direction Y is 1.2mm to 20mm.

[0102] In a specific example, K can be 1.2mm to 5mm, 5mm to 10mm, 10mm to 15mm, or 15mm to 20mm.

[0103] In a specific example, K can be 1.2mm, 2mm, 4mm, 5mm, 7mm, 9mm, 10mm, 12mm, 14mm, 15mm, 17mm, 19mm, or 20mm.

[0104] See Figure 3 In one embodiment, the conductive connector 1211 includes a plurality of conductive rods 1211a, which are distributed in parallel at intervals and pass through the mounting member 11, and are connected to the abutment member 1212.

[0105] Therefore, when the abutment 1212 abuts against the sub-grid line 32 or the main grid line 31, the multiple conductive rods 1211a can apply downward pressure to the abutment 121213 from multiple positions, preventing the abutment 1212 from tilting during the abutment process. This ensures that the abutment 1212 makes full contact with the top surface of the sub-grid line 32 or the main grid line 31, thereby enabling all N sub-grid lines 32 on the solar cell 30 to form good contact with the semiconductor layer of the solar cell 30, improving the conversion efficiency of the solar cell 30. In addition, it avoids the problem of striped EL defects in solar cells 30 without a main grid.

[0106] See Figure 3 In a specific example, multiple conductive rods 1211a are distributed at intervals along a first preset direction X.

[0107] See Figure 6 Fourthly, embodiments of this application provide a laser-assisted sintering apparatus for laser-assisted sintering of a solar cell 30. The laser-assisted sintering apparatus includes a conductive device 10 and a conductive support device 20 as described in any of the above embodiments. The conductive support device 20 is used to support the solar cell 30 and is also used to be electrically connected to the solar cell 30.

[0108] Understandably, the laser-assisted sintering equipment also includes a laser source, which is located above the conductive support device 20 and is used to irradiate the sub-grid lines 32 of the solar cell 30.

[0109] The laser-assisted sintering equipment provided in this application includes a conductive device 10 and a conductive support device 20 as described in any of the above embodiments. The conductive device 10 includes a mounting component 11, a probe assembly 12, and a plurality of conductive modules 13. The probe assembly 12 includes a plurality of probes 121 arranged at intervals along a first preset direction X and passing through the mounting component 11. The plurality of conductive modules 13 are connected to the plurality of probes 121 in a one-to-one correspondence. Thus, during laser-assisted sintering of the solar cell 30, the conductive support device 20 supports the solar cell 30 and is electrically connected to it. Multiple probes 121 are electrically connected to the N sub-grid lines 32 of the solar cell 30 to apply a bias voltage to the solar cell 30. Based on the conductivity resistance of the sub-grid lines 32, the conductive module 13 controls the bias voltage applied to the corresponding probe 121. This ensures that the bias voltage on each sub-grid line 32 is positively correlated with its conductivity resistance, so that the Joule heat generated by the local current flowing through each sub-grid line 32 is beneficial to the sintering of the sub-grid lines 32. Consequently, all N sub-grid lines 32 on the solar cell 30 can form good contact with the semiconductor layer of the solar cell 30, thereby improving the conversion efficiency of the solar cell 30.

[0110] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0111] The above embodiments merely illustrate several implementation methods of this application, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the patent application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this patent application should be determined by the appended claims.

Claims

1. A conductive device applied to a solar cell, characterized in that, include: Installation components; The probe assembly includes a plurality of probes arranged at intervals along a first preset direction and passing through the mounting member, the probes being used for direct electrical connection with the sub-grid lines of the solar cell; Multiple conductive modules are spaced apart on the mounting component; Multiple conductive modules are connected one-to-one with multiple probes, and the conductive modules are used to control the bias voltage applied to the corresponding probes.

2. The conductive device according to claim 1, characterized in that, The conductive module includes a conductive component and a voltage control module. The conductive component is connected to the corresponding probe. The voltage control module is electrically connected to the conductive component and is used to control the bias voltage applied to the corresponding probe.

3. The conductive device according to claim 2, characterized in that, The conductive component includes a conductive block, which is disposed within the mounting component. The conductive block has a mounting hole, and the probe passes through the mounting hole. The voltage control module includes a voltage controller, which is mounted on the mounting component and connected to the conductive block.

4. The conductive device according to claim 1, characterized in that, The probe includes a conductive connector and an abutment. The conductive connector is inserted into the mounting component, and the abutment extends along a first preset direction and is connected to one end of the conductive connector. The abutment is used to abut against the sub-grid line of the solar cell.

5. The conductive device according to claim 4, characterized in that, The plurality of probes are arranged in a row along a first preset direction and in a column along a second preset direction that intersects with the first preset direction; two adjacent abutting members along the second preset direction are arranged in an alternating manner along the first preset direction.

6. The conductive device according to claim 5, characterized in that, The dimension of the abutting member along the first preset direction is L; In two abutting members that are adjacent along the second preset direction and staggered along the first preset direction, the distance between the geometric center of one member and the geometric center of the other member in the first preset direction is S; 1 / 2L≤S<L.

7. The conductive device according to claim 4, characterized in that, The plurality of probes are arranged at intervals along a first preset direction, and the distance between two adjacent abutment members is less than the first preset distance.

8. The conductive device according to claim 7, characterized in that, The first preset spacing is 0.2mm-2mm.

9. The conductive device according to any one of claims 4 to 8, characterized in that, The dimension of the abutment member along the first preset direction is L, where 10mm≤L≤26.25mm.

10. The conductive device according to claim 4, characterized in that, The conductive connector includes multiple conductive rods, which are distributed in parallel at intervals and pass through the mounting component. The multiple conductive rods are connected to the abutment component.

11. A laser-assisted sintering apparatus for performing laser-assisted sintering processing on solar cells, characterized in that, include: The conductive device according to any one of claims 1 to 10; A conductive support device is used to support the solar cell; Furthermore, the conductive support device is also used for electrical connection with the solar cell.

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