Two-terminal antiferromagnetic memory device and fabrication method, writing method and reading method thereof

Abstract

The application discloses a two-end antiferromagnetic memory device and a preparation method, a writing method and a reading method thereof. The two-end antiferromagnetic memory device comprises a substrate, an antiferromagnetic layer device and two electrodes. The two-end antiferromagnetic memory device can be integrated at a high density, and meanwhile, high-speed reading and writing can be realized, and the antiferromagnetic Niel vector is turned and read at a level of 100 picoseconds.

Description

Technical Field

[0001] This invention relates to the field of non-volatile memory technology, and in particular to a two-terminal antiferromagnetic memory device and its preparation, writing, and reading methods. Background Technology

[0002] Antiferromagnets (AFMs) are ordered magnetic materials with adjacent magnetic moments arranged antiparallel and no net magnetic moment overall. Due to the alternating orientation of magnetic moments on individual atoms and the zero net magnetization, antiferromagnets are difficult to control with external magnetic fields and are insensitive to magnetic fields. This is both an advantage and a disadvantage as a magnetic storage material. The advantage lies in the high stability of the antiferromagnetic magnetization direction under an external magnetic field, typically requiring a magnetic field of over 100 Tesla to change its storage state. The disadvantage is that its storage state is not easily controlled by magnetic fields or currents. Furthermore, antiferromagnetic resonance frequencies can reach terahertz (THz), meaning its magnetization state can change on a picosecond timescale, three orders of magnitude smaller (~1 ns) than the flip timescale of ferromagnets.

[0003] Therefore, reversing and reading the magnetization direction (Nell vector) of antiferromagnets is challenging. In related technologies, Nell vector reversal via current-driven reversal relies on an eight-terminal device, requiring the sequential application of reversing currents to different corresponding ports for different reversal directions. Similarly, Nell vector reading also requires the sequential application of reading currents to different corresponding ports, and then the direction of the Nell vector is determined by detecting the Hall voltage at a port perpendicular to the reading current, thus enabling the reading of the storage state. This eight-terminal device not only hinders high-density integration of the device but also prevents high-speed writing and reading of antiferromagnetic storage devices. Summary of the Invention

[0004] This application provides a two-ended antiferromagnetic storage device and its fabrication, writing, and reading methods. The two-ended antiferromagnetic storage device includes a substrate, an antiferromagnetic layer device, and two electrodes. The two-ended antiferromagnetic storage device can be integrated at high density and can achieve high-speed reading and writing, realizing the flipping and reading of antiferromagnetic Nell vectors at the picosecond level.

[0005] According to a first aspect of the present invention, a two-ended antiferromagnetic storage device is provided, comprising:

[0006] substrate;

[0007] An antiferromagnetic layer device is disposed at the upper end of the substrate; the antiferromagnetic layer device includes a protective layer and an antiferromagnetic layer disposed from top to bottom;

[0008] Two electrodes are disposed at the upper end of the substrate, with one electrode located at one end of the antiferromagnetic layer device and the other electrode located at the other end of the antiferromagnetic layer device.

[0009] In some embodiments, the antiferromagnetic layer device further includes an intercalation layer disposed between the antiferromagnetic layer and the substrate.

[0010] In some embodiments, the antiferromagnetic layer comprises a preset alloy, the preset alloy comprising a first type of element and a second type of element, the first type of element comprising at least one element selected from Fe, Co, Ni, Mn, and Gd, and the second type of element being a non-magnetic element; or, the antiferromagnetic layer comprises an oxide of at least one element selected from Fe, Co, Ni, Mn, and Gd.

[0011] According to a second aspect of the present invention, a method for fabricating a two-terminal antiferromagnetic storage device is provided, comprising:

[0012] Provide a substrate;

[0013] An antiferromagnetic layer device is formed, wherein the antiferromagnetic layer device is disposed at the upper end of the substrate; the antiferromagnetic layer device includes a protective layer and an antiferromagnetic layer disposed from top to bottom;

[0014] Two electrodes are formed, which are disposed at the upper end of the substrate, with one electrode located at one end of the antiferromagnetic layer device and the other electrode located at the other end of the antiferromagnetic layer device.

[0015] In some embodiments, the step of forming the antiferromagnetic layer device includes:

[0016] An antiferromagnetic material and a protective material are sequentially formed at the upper end of the substrate;

[0017] The antiferromagnetic material and the protective material are processed using photolithography and etching processes to pattern the antiferromagnetic material into an antiferromagnetic layer in a strip-shaped antiferromagnetic layer device, and to pattern the protective material into a protective layer in a strip-shaped antiferromagnetic layer device.

[0018] In some embodiments, after forming an antiferromagnetic material at the upper end of the substrate, the method further includes: forming an intercalation material at the upper end of the antiferromagnetic material;

[0019] Accordingly, the steps of processing the antiferromagnetic material and the protective material using photolithography and etching processes to pattern the antiferromagnetic material into an antiferromagnetic layer in a strip-shaped antiferromagnetic layer device, and to pattern the protective material into a protective layer in a strip-shaped antiferromagnetic layer device, include:

[0020] The antiferromagnetic material, intercalation material, and protective material are processed using photolithography and etching processes to pattern the antiferromagnetic material into an antiferromagnetic layer in a long strip-shaped antiferromagnetic layer device, to pattern the intercalation material into an intercalation layer in a long strip-shaped antiferromagnetic layer device, and to pattern the protective material into a protective layer in a long strip-shaped antiferromagnetic layer device.

[0021] In some embodiments, the step of forming two electrodes includes:

[0022] Photoresist is applied to the upper end of the component including the substrate and the antiferromagnetic layer device;

[0023] Electrode regions are formed on the substrate at positions close to both ends of the antiferromagnetic layer device by exposure.

[0024] Electrodes are deposited on the electrode region using a thin film deposition process, and the photoresist in the non-electrode region at the top of the component is stripped using a stripping process.

[0025] According to a third aspect of the present invention, a method for writing to a two-ended antiferromagnetic storage device is provided, applied to said storage device, comprising:

[0026] A write current is applied to the antiferromagnetic layer device through an electrode to cause the antiferromagnetic layer in the antiferromagnetic layer device to generate a spin orbit moment, which changes the state of the Nell vector.

[0027] In some embodiments, the antiferromagnetic layer device further includes an intercalation layer; the writing method further includes:

[0028] The intercalation in the antiferromagnetic layer device generates an auxiliary spin orbital moment to induce the antiferromagnetic layer to change the state of the Nell vector.

[0029] According to a fourth aspect of the present invention, a method for reading a two-ended antiferromagnetic storage device is provided, comprising:

[0030] An alternating readout current of a preset frequency is applied to the antiferromagnetic layer device through an electrode;

[0031] The voltage generated between two electrodes is detected, including a DC voltage or an AC voltage with a frequency that is an integer multiple of a preset frequency f;

[0032] Based on the direction and magnitude of the voltage, the state of the Nell vector is determined to enable the reading of the stored state represented by the Nell vector.

[0033] The above embodiments provide a two-ended antiferromagnetic storage device and its preparation, writing, and reading methods. The two-ended antiferromagnetic storage device includes a substrate, an antiferromagnetic layer device, and two electrodes. The two-ended antiferromagnetic storage device can be integrated at high density and can achieve high-speed reading and writing, realizing the flipping and reading of antiferromagnetic Nell vectors at the picosecond level.

[0034] The above description is merely an overview of the technical solution of the present invention. In order to better understand the technical means of the present invention and to implement it in accordance with the contents of the specification, and in order to make the above and other objects, features and advantages of the present invention more apparent and understandable, specific embodiments of the present invention are described below. Attached Figure Description

[0035] Figure 1 An exemplary schematic diagram of a two-ended antiferromagnetic storage device according to some embodiments is shown;

[0036] Figure 2 A flowchart illustrating a method for fabricating a two-ended antiferromagnetic storage device according to some embodiments is provided;

[0037] Figure 3 An exemplary schematic diagram of a structure including a substrate and a material for fabricating an antiferromagnetic layer device is provided according to some embodiments;

[0038] Figure 4 An exemplary schematic diagram of a device including a substrate and an antiferromagnetic layer according to some embodiments is shown;

[0039] Figure 5 An exemplary schematic diagram of applying a write current to an antiferromagnetic layer device according to some embodiments is shown;

[0040] Figure 6 An exemplary schematic diagram of applying an alternating readout current to an antiferromagnetic layer device according to some embodiments is shown;

[0041] Figure 7 A schematic diagram illustrating test results of a two-ended antiferromagnetic storage device according to some embodiments is provided. Detailed Implementation

[0042] The technical solutions in the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments.

[0043] It should be noted that, specifically, the terms "on," "above," "over," and "above" in the description of this application should be interpreted in the broadest sense, meaning that a description containing these terms is interpreted as "a component may be disposed on another component in direct contact, or there may be an intermediate component or layer between the components." Furthermore, for ease of description, this application may also use spatial relative terms such as "below," "under," "below," "on," "above," "lower," and "upper" to describe the relationship between one element or component and another element or component shown in the accompanying drawings. In addition to the orientations described in the figures, spatial relative terms are also intended to cover different orientations of the device during use or operation. The device may be oriented in other ways (rotated 90° or otherwise), and the spatial relative descriptive terms used in this application can be interpreted accordingly.

[0044] As used in this application, the term "layer" refers to a portion of material comprising a region of a certain thickness. A layer may extend over the entire lower or upper structure, or it may extend within a localized area of ​​the lower or upper structure. Furthermore, a layer may be a region of a homogeneous or heterogeneous continuous structure, with a thickness less than the thickness of the continuous structure. For example, a layer may be located between the top and bottom surfaces of a continuous structure, or between any pair of horizontal planes therebetween. A layer may extend horizontally, vertically, and / or along a conical surface.

[0045] This application provides a two-ended antiferromagnetic storage device and its fabrication, writing, and reading methods. The two-ended antiferromagnetic storage device includes a substrate, an antiferromagnetic layer device, and two electrodes. The two-ended antiferromagnetic storage device can be integrated at high density and can achieve high-speed reading and writing. It realizes the flipping and reading of the antiferromagnetic Nell vector at the picosecond level, solving the problem that eight devices cannot be integrated and high-speed reading and writing are not possible in the prior art.

[0046] Figure 1 A schematic diagram of a two-ended antiferromagnetic storage device is shown as an example according to some embodiments. The storage device includes a substrate 1, an antiferromagnetic layer device 2, and two electrodes 3.

[0047] The antiferromagnetic layer device 2 is disposed at the upper end of the substrate 1; the antiferromagnetic layer device 2 includes a protective layer and an antiferromagnetic layer disposed from top to bottom.

[0048] In this embodiment of the application, the substrate can be a Si / SiO2 substrate.

[0049] In this embodiment, the protective layer is made of an insulating material and is used to protect the antiferromagnetic layer from oxidation or corrosion.

[0050] In this embodiment, the state of the Nair vector in the antiferromagnetic layer is used to store data. The antiferromagnetic layer generates a spin orbit under the influence of an applied current, and this spin orbit can be used to change the direction of the Nair vector, i.e., change the state of the Nair vector. In some embodiments, the thickness of the antiferromagnetic layer is 0.5-100 nm.

[0051] In some embodiments, the antiferromagnetic layer comprises a preset alloy, which includes a first type of element and a second type of element. The first type of element includes at least one element selected from Fe, Co, Ni, Mn, and Gd, and the second type of element is a non-magnetic element. For example, the second type of element includes Pt or Ir. In other embodiments, the antiferromagnetic layer comprises an oxide of at least one element selected from Fe, Co, Ni, Mn, and Gd.

[0052] In some embodiments, the antiferromagnetic layer device further includes an intercalation layer disposed between the antiferromagnetic layer and the substrate.

[0053] In this embodiment, the intercalation layer is used to generate a spin orbital moment under the action of an applied current. This spin orbital moment is used to assist in flipping the Nair vector of the antiferromagnetic layer, changing the direction of the Nair vector, i.e., changing the state of the Nair vector. In some embodiments, the intercalation layer can be made of materials such as Pt, W, Ta, and alloys that can generate a spin orbital moment.

[0054] In this embodiment, two electrodes 3 are disposed at the upper end of the substrate 1, with one electrode 3 located at one end of the antiferromagnetic layer device 2 and the other electrode 3 located at the other end of the antiferromagnetic layer device 2.

[0055] In this embodiment of the application, the electrode material can be a conductor material, for example, Cu, or Ti and Au can be used together as conductor materials.

[0056] This application also provides a method for fabricating a two-terminal antiferromagnetic storage device. Figure 2 A flowchart illustrating a method for fabricating a two-ended antiferromagnetic storage device according to some embodiments is provided. The method includes steps S100-S300.

[0057] S100, provides a substrate.

[0058] S200. Form an antiferromagnetic layer device, wherein the antiferromagnetic layer device is disposed at the upper end of the substrate; the antiferromagnetic layer device includes a protective layer and an antiferromagnetic layer disposed from top to bottom.

[0059] S300. Two electrodes are formed, which are disposed on the upper end of the substrate, with one electrode located at one end of the antiferromagnetic layer device and the other electrode located at the other end of the antiferromagnetic layer device.

[0060] In some embodiments, the step of forming the antiferromagnetic layer device includes:

[0061] An antiferromagnetic material and a protective material are sequentially formed on the upper end of the substrate.

[0062] In this embodiment, the antiferromagnetic material is the same as the antiferromagnetic layer described above, and will not be repeated here. The protective material is the same as the protective layer described above, and will not be repeated here.

[0063] Figure 3 An exemplary schematic diagram is shown of a structure including a substrate and a material for fabricating an antiferromagnetic layer device, according to some embodiments. Figure 3 The device includes a substrate 1 and a material 2 for fabricating the antiferromagnetic layer device. In this embodiment, the material for fabricating the antiferromagnetic layer device includes an antiferromagnetic material and a protective material.

[0064] The antiferromagnetic material and the protective material are processed using photolithography and etching processes to pattern the antiferromagnetic material into an antiferromagnetic layer in a strip-shaped antiferromagnetic layer device, and to pattern the protective material into a protective layer in a strip-shaped antiferromagnetic layer device.

[0065] In this embodiment, the antiferromagnetic layer device is elongated. It is understood that both the antiferromagnetic layer and the protective layer in the antiferromagnetic layer device are elongated.

[0066] Figure 4 An exemplary schematic diagram of a device including a substrate and an antiferromagnetic layer according to some embodiments is shown. Figure 4 It includes a substrate 1 and an antiferromagnetic layer device 2.

[0067] In some embodiments, after forming an antiferromagnetic material at the upper end of the substrate, the method further includes: forming an intercalation material at the upper end of the antiferromagnetic material;

[0068] Accordingly, the steps of processing the antiferromagnetic material and the protective material using photolithography and etching processes to pattern the antiferromagnetic material into an antiferromagnetic layer in a strip-shaped antiferromagnetic layer device, and to pattern the protective material into a protective layer in a strip-shaped antiferromagnetic layer device, include:

[0069] The antiferromagnetic material, intercalation material, and protective material are processed using photolithography and etching processes to pattern the antiferromagnetic material into an antiferromagnetic layer in a strip-shaped antiferromagnetic layer device, the intercalation material into an intercalation layer in a strip-shaped antiferromagnetic layer device, and the protective material into a protective layer in a strip-shaped antiferromagnetic layer device. In this embodiment, the antiferromagnetic layer, protective layer, and intercalation layer in the antiferromagnetic layer device are all strip-shaped.

[0070] In this embodiment, the antiferromagnetic layer device includes a protective layer, an intercalation layer, and an antiferromagnetic layer arranged from top to bottom.

[0071] In some embodiments, the step of forming two electrodes includes:

[0072] Photoresist is applied to the upper end of the component including the substrate and the antiferromagnetic layer device. In this embodiment, photoresist is applied to the upper end of the antiferromagnetic layer device. Except for the location where the antiferromagnetic layer device is disposed, the upper end of the substrate is coated with photoresist.

[0073] Electrode regions are formed on the substrate near both ends of the antiferromagnetic layer device by exposure. In this embodiment, the photoresist at both ends of the antiferromagnetic layer device is removed by exposure to form two electrode regions.

[0074] Electrodes are deposited on the electrode region using a thin-film deposition process, and the photoresist in the non-electrode region at the top of the component is removed using a lift-off process. This removes the remaining photoresist, leaving the substrate with only the antiferromagnetic layer device and electrodes located at both ends of the antiferromagnetic layer device. See again. Figure 1 ,exist Figure 1 It includes a substrate 1, an antiferromagnetic layer device 2, and a motor 3.

[0075] In this embodiment, in addition to forming electrodes through thin film deposition, a vapor deposition method, it can also be achieved through electroplating, sputtering, and other methods.

[0076] In some embodiments, the electrode is made of Ti and Au, and the step of depositing the electrode on the electrode region by thin film deposition includes: firstly depositing Ti onto the electrode region using a thin film deposition process, and then depositing Au onto the top of Ti using a thin film deposition process.

[0077] This application embodiment also provides a writing method for a two-terminal antiferromagnetic storage device, applied to the storage device, including:

[0078] A write current is applied to the antiferromagnetic layer device through an electrode to cause the antiferromagnetic layer in the antiferromagnetic layer device to generate a spin orbit moment, which changes the state of the Nell vector.

[0079] Figure 5 An exemplary schematic diagram of applying a write current to an antiferromagnetic layer device according to some embodiments is shown. Figure 5 The write current, i.e., the write current pulse, is applied to the antiferromagnetic layer device.

[0080] In this embodiment, a write current is applied to the antiferromagnetic layer device, and the antiferromagnetic layer in the antiferromagnetic layer device generates a spin orbit moment. This spin orbit moment changes the direction of the Nair vector, that is, the state of the Nair vector, thereby realizing the process of writing data.

[0081] In some embodiments, the antiferromagnetic layer device further includes an intercalation layer; the writing method further includes:

[0082] The intercalation in the antiferromagnetic layer device generates an auxiliary spin orbital moment to induce the antiferromagnetic layer to change the state of the Nell vector.

[0083] In this embodiment, the intercalation in the antiferromagnetic layer device can generate an auxiliary spin orbital moment, which can help induce the antiferromagnetic layer to change the state of the Nell vector.

[0084] In this embodiment of the application, in terms of data writing, the state of the Nell vector of the antiferromagnetic layer is changed by the spin orbital moment induced by the current.

[0085] This application also provides a method for reading a two-terminal antiferromagnetic storage device, including:

[0086] An alternating readout current of a preset frequency f is applied to the antiferromagnetic layer device through an electrode.

[0087] Specifically, an alternating reading current with a preset frequency f can be applied by applying a reading voltage.

[0088] The voltage generated between two electrodes is detected, including a DC voltage or an AC voltage with a frequency that is an integer multiple of a preset frequency f.

[0089] In this embodiment, the voltage generated between the two electrodes can be detected using a voltmeter.

[0090] Based on the direction and magnitude of the voltage, the state of the Nell vector is determined to enable the reading of the stored state represented by the Nell vector.

[0091] In this embodiment, the direction of the Nair vector, i.e. the state of the Nair vector, is determined based on the detected AC or DC voltage, thereby enabling the reading of the storage state represented by the Nair vector, i.e. the data state.

[0092] In this embodiment of the application, in terms of data reading, the Nell vector is read by applying an alternating reading current with a preset frequency f and utilizing the DC or integer multiple frequency signal generated by the unidirectional magnetoresistance effect of the antiferromagnetic layer.

[0093] Figure 6 An exemplary schematic diagram illustrating the application of an alternating readout current to an antiferromagnetic layer device according to some embodiments is shown. Figure 6 The alternating readout current is applied to the antiferromagnetic layer device, and the voltage between the two electrodes can be detected using a voltmeter.

[0094] The following specific example demonstrates the feasibility of the method in the embodiments of this application.

[0095] Specifically, the antiferromagnetic layer is made of NiOx with a thickness of 15 nm, and the intercalation layer is made of Pt. There is no protective layer (since this example is for verification purposes, no protective layer is provided; the presence or absence of a protective layer does not affect the verification of the feasibility of the method in this application). The process of fabricating the two-ended antiferromagnetic memory device includes: sequentially depositing 3 nm Pt and 15 nm NiOx on a Si / SiO2 substrate. The Pt / NiOx bilayer film is etched into a rectangular strip 5 μm long and 2 μm wide using photolithography and etching processes, and Ti 10 nm / Au 100 nm are deposited at both ends as electrodes. This process of fabricating the two-ended antiferromagnetic memory device has been described in detail above and will not be repeated here.

[0096] The testing process is as follows: First, a write current pulse with a pulse width of 0.2 ns is applied to the fabricated antiferromagnetic storage device at both ends. (Refer to [reference needed]). Figure 5 Then, a radio frequency current with a preset frequency of 3 GHz and a power of 0 dBm, i.e., an alternating read current, is applied, while the DC voltage between the two antiferromagnetic memory devices is detected. (See also...) Figure 6 .

[0097] Figure 7This example illustrates a schematic diagram of test results for a two-terminal antiferromagnetic storage device according to some embodiments, where the horizontal axis represents the magnitude of the applied write current pulse, and the vertical axis represents the DC voltage detected between the two antiferromagnetic storage devices. Under positive and negative write current pulses, the detected voltage switches between high and low voltages. The high and low voltages correspond to the two directions of the antiferromagnetic Nell vector, labeled "data state 0" and "data state 1," respectively. This example demonstrates that the antiferromagnetic Nell vector can change under a 0.2 ns pulse current, realizing the write process; the two states of the Nell vector can cause the detected voltage to be high or low, and the state of the Nell vector can be read by the voltage, thereby realizing the reading of stored data. These results demonstrate the feasibility of the method in the embodiments of this application.

[0098] This application provides a two-ended antiferromagnetic storage device and its preparation, writing, and reading methods. The two-ended antiferromagnetic storage device includes a substrate, an antiferromagnetic layer device, and two electrodes. The two-ended antiferromagnetic storage device can be integrated at high density and can achieve high-speed reading and writing, realizing the flipping and reading of antiferromagnetic Nell vectors at the picosecond level.

[0099] The above embodiments merely illustrate several implementation methods of the present invention, and their descriptions are relatively specific and detailed, but they should not be construed as limiting the scope of the invention patent. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of the present invention, and these all fall within the protection scope of the present invention. Therefore, the protection scope of this invention patent should be determined by the appended claims.

Claims

1. A two-ended antiferromagnetic storage device, characterized in that, include: substrate; An antiferromagnetic layer device is disposed at the upper end of the substrate; the antiferromagnetic layer device includes a protective layer and an antiferromagnetic layer disposed from top to bottom; Two electrodes are disposed at the upper end of the substrate, with one electrode located at one end of the antiferromagnetic layer device and the other electrode located at the other end of the antiferromagnetic layer device.

2. The storage device according to claim 1, characterized in that, The antiferromagnetic layer device further includes an intercalation layer; the intercalation layer is disposed between the antiferromagnetic layer and the substrate.

3. The storage device according to claim 1, characterized in that, The antiferromagnetic layer comprises a preset alloy, which includes a first type of element and a second type of element. The first type of element includes at least one element selected from Fe, Co, Ni, Mn, and Gd, and the second type of element is a non-magnetic element; or, the antiferromagnetic layer comprises an oxide of at least one element selected from Fe, Co, Ni, Mn, and Gd.

4. A method for fabricating a two-ended antiferromagnetic storage device, characterized in that, include: Provide a substrate; An antiferromagnetic layer device is formed, wherein the antiferromagnetic layer device is disposed at the upper end of the substrate; the antiferromagnetic layer device includes a protective layer and an antiferromagnetic layer disposed from top to bottom; Two electrodes are formed, which are disposed at the upper end of the substrate, with one electrode located at one end of the antiferromagnetic layer device and the other electrode located at the other end of the antiferromagnetic layer device.

5. The preparation method according to claim 4, characterized in that, The steps for forming the antiferromagnetic layer device include: An antiferromagnetic material and a protective material are sequentially formed at the upper end of the substrate; The antiferromagnetic material and the protective material are processed using photolithography and etching processes to pattern the antiferromagnetic material into an antiferromagnetic layer in a strip-shaped antiferromagnetic layer device, and to pattern the protective material into a protective layer in a strip-shaped antiferromagnetic layer device.

6. The preparation method according to claim 5, characterized in that, After forming an antiferromagnetic material at the upper end of the substrate, the method further includes: forming an intercalation material at the upper end of the antiferromagnetic material; Accordingly, the steps of processing the antiferromagnetic material and the protective material using photolithography and etching processes to pattern the antiferromagnetic material into an antiferromagnetic layer in a strip-shaped antiferromagnetic layer device, and to pattern the protective material into a protective layer in a strip-shaped antiferromagnetic layer device, include: The antiferromagnetic material, intercalation material, and protective material are processed using photolithography and etching processes to pattern the antiferromagnetic material into an antiferromagnetic layer in a long strip-shaped antiferromagnetic layer device, to pattern the intercalation material into an intercalation layer in a long strip-shaped antiferromagnetic layer device, and to pattern the protective material into a protective layer in a long strip-shaped antiferromagnetic layer device.

7. The preparation method according to claim 4, characterized in that, The step of forming two electrodes includes: Photoresist is applied to the upper end of the component including the substrate and the antiferromagnetic layer device; Electrode regions are formed on the substrate at positions close to both ends of the antiferromagnetic layer device by exposure. Electrodes are deposited on the electrode region using a thin film deposition process, and the photoresist in the non-electrode region at the top of the component is stripped using a stripping process.

8. A writing method for a two-terminal antiferromagnetic storage device, applied to the storage device of claim 1, characterized in that, include: A write current is applied to the antiferromagnetic layer device through an electrode to cause the antiferromagnetic layer in the antiferromagnetic layer device to generate a spin orbit moment, which changes the state of the Nell vector.

9. The writing method according to claim 8, characterized in that, The antiferromagnetic layer device further includes an intercalation layer; the writing method further includes: The intercalation in the antiferromagnetic layer device generates an auxiliary spin orbital moment to induce the antiferromagnetic layer to change the state of the Nell vector.

10. A method for reading a two-ended antiferromagnetic storage device, characterized in that, include: An alternating readout current of a preset frequency is applied to the antiferromagnetic layer device through an electrode; The voltage generated between two electrodes is detected, including a DC voltage or an AC voltage with a frequency that is an integer multiple of a preset frequency f; Based on the direction and magnitude of the voltage, the state of the Nell vector is determined to enable the reading of the stored state represented by the Nell vector.

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