Inductor elements and inductor components

Abstract

Provided are an inductor element and an inductor component. The inductor element includes a magnetic layer disposed along a first imaginary plane and having uniaxial magnetic anisotropy, and an inductor wiring disposed at a position spaced apart from the first imaginary plane in a first direction intersecting the first imaginary plane and along a second imaginary plane parallel to the first imaginary plane. A roughness of a planar portion of the magnetic layer located in the first imaginary plane is 3 nm or more and 10 nm or less.

Description

Technical Field

[0001] This disclosure relates to inductor elements and inductor components having inductor elements. Background Technology

[0002] Patent Document 1 discloses a wire-wound magnetic thin-film inductor. In the inductor of Patent Document 1, a magnetic thin film is formed on a glass substrate.

[0003] Patent Document 1: Japanese Patent Application Publication No. 2000-252127

[0004] In the inductor of Patent Document 1, the simultaneous consideration of ensuring the adhesion of the magnetic layer and improving the inductance acquisition efficiency was not taken into account. Summary of the Invention

[0005] The purpose of this disclosure is to provide an inductor element and inductor component that can ensure the adhesion of the magnetic layer and improve the inductance acquisition efficiency.

[0006] One aspect of the inductor element disclosed herein includes:

[0007] A magnetic layer, disposed along a first imaginary plane, has uniaxial magnetic anisotropy; and

[0008] The inductor wiring is located at a position spaced apart from the first imaginary plane in a first direction intersecting the first imaginary plane, and is arranged along a second imaginary plane parallel to the first imaginary plane.

[0009] The roughness of the planar portion of the magnetic layer located on the first imaginary plane is 3 nm or more and 10 nm or less.

[0010] One aspect of the inductor component disclosed herein includes:

[0011] The inductor element described above; and

[0012] External terminals are electrically connected to the wiring of the aforementioned inductor.

[0013] The inductor element and inductor component according to the above method can realize an inductor element and inductor component that can ensure the adhesion of the magnetic layer and improve the inductance acquisition efficiency. Attached Figure Description

[0014] Figure 1 This is a plan view showing an inductor component having an inductor element according to the first embodiment of the present disclosure.

[0015] Figure 2 It is along Figure 1 A schematic diagram of the cross section of line X1-X2.

[0016] Figure 3 It is along Figure 1 A schematic diagram of the cross section of line Y1-Y2.

[0017] Figure 4 It means Figure 1 A diagram of an example of the B-H curve of the magnetic layer of an inductor component.

[0018] Figure 5 It is used for Figure 1 A first cross-sectional schematic diagram illustrating an example of a method for manufacturing an inductor component.

[0019] Figure 6 It is used for Figure 1 The second cross-sectional view illustrates an example of a method for manufacturing an inductor component.

[0020] Figure 7 It is used for Figure 1 The third cross-sectional view illustrates an example of a method for manufacturing an inductor component.

[0021] Figure 8 It is used for Figure 1 The fourth cross-sectional view illustrates an example of a method for manufacturing an inductor component.

[0022] Figure 9 It is used for Figure 1 The fifth cross-sectional view illustrates an example of a method for manufacturing an inductor component.

[0023] Figure 10 It is used for Figure 1 The sixth cross-sectional view illustrates an example of a method for manufacturing an inductor component.

[0024] Figure 11 It is used for Figure 1 The seventh cross-sectional view illustrates an example of a method for manufacturing an inductor component.

[0025] Figure 12 It is used for Figure 1 The eighth cross-sectional view illustrates an example of a method for manufacturing an inductor component.

[0026] Figure 13 It is used for Figure 1 The ninth cross-sectional view illustrates an example of a method for manufacturing an inductor component.

[0027] Figure 14 It is used for Figure 1 The tenth cross-sectional view illustrates an example of a method for manufacturing an inductor component.

[0028] Figure 15 It is used for Figure 1 The eleventh cross-sectional view illustrates an example of a method for manufacturing an inductor component.

[0029] Figure 16 It is used for Figure 1 The twelfth cross-sectional view illustrates an example of a method for manufacturing an inductor component.

[0030] Figure 17 It means Figure 1 A graph showing the relationship between the roughness of the planar portion of the magnetic layer of an inductor component and the CTE of the insulating layer that is in direct contact with the planar portion.

[0031] Figure 18 It means Figure 1 A plan view of the first modified example of the inductor component.

[0032] Figure 19 It means Figure 1 A cross-sectional schematic diagram of a second modified example of an inductor component.

[0033] Figure 20 It is along Figure 19 A sectional view of the Z1-Z2 line.

[0034] Figure 21 It means Figure 1 A plan view of the third variant of the inductor component.

[0035] Figure 22 It means Figure 1 A cross-sectional schematic diagram of the fourth modified example of the inductor component.

[0036] Figure 23 It is used for the formation Figure 22 The first figure illustrates an example of a method for constructing a magnetic layer for an inductor component.

[0037] Figure 24 It is used for the formation Figure 22 The second figure illustrates an example of a method for constructing a magnetic layer for an inductor component.

[0038] Figure 25 It is used for the formation and Figure 22 The first figure illustrates an example of a method for different magnetic layers in an inductor component.

[0039] Figure 26 It is used for the formation and Figure 22 The second figure illustrates an example of a method for different magnetic layers in an inductor component.

[0040] Figure 27This is a plan view showing an inductor component having an inductor element according to the second embodiment of the present disclosure.

[0041] Figure 28 It is along Figure 27 A sectional view of the D1-D2 line.

[0042] Figure 29 It means Figure 27 A diagram of an example of the B-H curve of the magnetic layer of an inductor component.

[0043] Figure 30 It is used for Figure 27 A first cross-sectional schematic diagram illustrating an example of a method for manufacturing an inductor component.

[0044] Figure 31 It is used for Figure 27 The second cross-sectional view illustrates an example of a method for manufacturing an inductor component.

[0045] Figure 32 It is used for Figure 27 The third cross-sectional view illustrates an example of a method for manufacturing an inductor component.

[0046] Figure 33 It is used for Figure 27 The fourth cross-sectional view illustrates an example of a method for manufacturing an inductor component.

[0047] Figure 34 It is used for Figure 27 The fifth cross-sectional view illustrates an example of a method for manufacturing an inductor component.

[0048] Figure 35 It is used for Figure 27 The sixth cross-sectional view illustrates an example of a method for manufacturing an inductor component.

[0049] Figure 36 It is used for Figure 27 The seventh cross-sectional view illustrates an example of a method for manufacturing an inductor component.

[0050] Figure 37 It is used for Figure 27 The eighth cross-sectional view illustrates an example of a method for manufacturing an inductor component.

[0051] Figure 38 It is used for Figure 27 The ninth cross-sectional view illustrates an example of a method for manufacturing an inductor component.

[0052] Figure 39 It is used for Figure 27The tenth cross-sectional view illustrates an example of a method for manufacturing an inductor component.

[0053] Figure 40 It is used for Figure 27 The eleventh cross-sectional view illustrates an example of a method for manufacturing an inductor component.

[0054] Figure 41 It is used for Figure 27 The twelfth cross-sectional view illustrates an example of a method for manufacturing an inductor component.

[0055] Figure 42 It means Figure 27 A plan view of the first modified example of the inductor component.

[0056] Figure 43 It is along Figure 42 A sectional view of the E1-E2 line.

[0057] Figure 44 It means Figure 27 A cross-sectional schematic diagram of a second modified example of an inductor component.

[0058] Figure 45 It means Figure 27 A cross-sectional schematic diagram of the third modified example of the inductor component.

[0059] Figure 46 It means Figure 27 A cross-sectional schematic diagram of the fourth modified example of the inductor component.

[0060] Figure 47 It is along Figure 46 A sectional view of lines F1-F2.

[0061] Figure 48 It is along Figure 46 A cross-sectional view of lines G1-G2.

[0062] Figure 49 It means Figure 27 A first cross-sectional schematic diagram of the fifth variant of the inductor component.

[0063] Figure 50 It means Figure 27 A second cross-sectional schematic diagram of the fifth variant of the inductor component.

[0064] Figure 51 It means Figure 27 A cross-sectional schematic diagram of the sixth modified example of the inductor component. Detailed Implementation

[0065] The various methods of this disclosure are described.

[0066] The inductor element of the first method has the following features:

[0067] A magnetic layer, disposed along a first imaginary plane, has uniaxial magnetic anisotropy; and

[0068] The inductor wiring is positioned at a distance from the first imaginary plane in a first direction intersecting the first imaginary plane, and is arranged along a second imaginary plane parallel to the first imaginary plane.

[0069] The roughness of the planar portion of the magnetic layer located on the first imaginary plane is 3 nm or more and 10 nm or less.

[0070] According to the inductor element of the first embodiment, the adhesion of the magnetic layer can be ensured, and the inductance acquisition efficiency can be improved. For example, when the roughness of the planar portion of the magnetic layer is less than 3 nm, the contact area of ​​the magnetic layer decreases, and its adhesion is reduced. When the roughness of the planar portion of the magnetic layer is greater than 10 nm, the crystal structure of the magnetic material contained in the magnetic layer is randomly arranged, the uniaxial magnetic anisotropy of the magnetic layer is destroyed, and the inductance acquisition efficiency cannot be improved.

[0071] The inductor element of the second method is in contrast to the inductor element of the first method.

[0072] The aforementioned planar portion has the same roughness throughout the entire surface.

[0073] According to the second method of inductor element, since no patterning process is required, the manufacturing cost of the inductor element can be reduced.

[0074] The third type of inductor element is used in the first or second type of inductor element.

[0075] The portion of the inductor wiring located on the second imaginary plane has a roughness greater than that of the planar portion.

[0076] By using third-party inductor components, the adhesion of inductor wiring can be improved.

[0077] The fourth type of inductor element is any one of the inductor elements in the first to third types.

[0078] The device comprises a blank, with the aforementioned magnetic layer and inductor wiring located inside the blank.

[0079] The aforementioned blank includes an insulating layer that is in direct contact with the aforementioned planar portion.

[0080] The CTE of the above-mentioned insulation layer is above 2 ppm / ℃ and below 60 ppm / ℃.

[0081] The inductor element according to the fourth method can more reliably improve the inductance acquisition efficiency. For example, when the CTE of the insulating layer is greater than 60 ppm / ℃, if the magnetic layer is a laminate formed by sputtering, strain occurs during the heat treatment when forming the magnetic layer, resulting in a disordered crystal structure of the magnetic layer. In this case, the uniaxial magnetic anisotropy of the magnetic layer is destroyed, and the inductance acquisition efficiency cannot be improved.

[0082] The inductor element of the fifth method is any one of the inductor elements of the first to third methods.

[0083] The device comprises a blank, with the aforementioned magnetic layer and inductor wiring located inside the blank.

[0084] The aforementioned blank includes an insulating layer that is in direct contact with the aforementioned planar portion.

[0085] The CTE of the above-mentioned insulation layer is above 2 ppm / ℃ and below 35 ppm / ℃.

[0086] According to the inductor element of the fifth method, the inductance acquisition efficiency can be further improved reliably.

[0087] The sixth inductor element is any one of the inductor elements in the first to fifth methods.

[0088] The device comprises a blank, with the aforementioned magnetic layer and inductor wiring located inside the blank.

[0089] The aforementioned blank contains an inorganic material substrate.

[0090] According to the inductor element of the sixth method, for example, by including an inorganic material substrate such as a Si substrate, glass substrate, or ceramic substrate that is harder than an organic resin in the blank, the strength of the blank can be improved.

[0091] The inductor element of the seventh method is an improvement upon the inductor element of the sixth method.

[0092] The inorganic material substrate described above has a smaller roughness than the planar portion described above.

[0093] According to the inductor element of the seventh method, the roughness of the insulating layer of the blank can be easily adjusted.

[0094] The inductor component of the eighth method includes:

[0095] Any one of the inductor elements in methods one through seven; and

[0096] External terminals are electrically connected to the wiring of the aforementioned inductor.

[0097] According to the inductor component of the eighth method, an inductor component that can be easily mounted onto a circuit board can be realized.

[0098] The inductor component of the ninth method is incorporated into the inductor component of the eighth method.

[0099] The aforementioned inductor wiring is the first inductor wiring located on one side of the aforementioned magnetic layer in the first direction.

[0100] The aforementioned inductor element includes:

[0101] The second inductor wiring is located on the other side of the magnetic layer in the first direction; and

[0102] The conductive section electrically connects the wiring of the first inductor and the wiring of the second inductor.

[0103] The aforementioned first inductor wiring, the aforementioned second inductor wiring, and the aforementioned conductive portion constitute at least a portion of an inductor that rotates about a rotation axis, the aforementioned rotation axis extending along a second direction intersecting the aforementioned first direction.

[0104] According to the inductor component of the ninth method, since the inductor rotates around the magnetic layer, the magnetic flux density through the magnetic layer increases, thus enabling an inductor component with a high Q value.

[0105] The inductor component of the tenth method is incorporated into the inductor component of the ninth method.

[0106] The absolute value of the angle between the difficult or easy axis of the aforementioned magnetic layer and the aforementioned rotation axis is greater than zero degrees and less than 10 degrees.

[0107] According to the inductor component of the tenth embodiment, since most of the magnetic flux is oriented towards the anisotropic axis, the inductance acquisition efficiency and DC superposition characteristics can be improved. In addition, since the first inductor wiring, the second inductor wiring, and the first conductive portion formed along the imaginary plane constitute part of the inductor, the inductor component can be easily miniaturized (e.g., made into a thin film).

[0108] The inductor component of the eleventh method is incorporated in the inductor component of the ninth or tenth method.

[0109] The magnetic layer has a first end facing the conductive portion in a third direction, and the third direction intersects the first direction and the second direction.

[0110] The aforementioned conductive portion has a second end facing the aforementioned magnetic layer in the aforementioned third direction.

[0111] The first end and the second end are inclined in the same direction relative to the first direction.

[0112] According to the inductor component of the eleventh embodiment, since the first end of the magnetic layer and the second end of the first conductive portion can be brought close together, the inductor can be miniaturized. Therefore, a miniaturized inductor component can be realized. Furthermore, by bringing the first end of the magnetic layer and the second end of the first conductive portion close together, the volume of the magnetic layer can be increased. Therefore, the inductance acquisition efficiency can be improved.

[0113] The inductor component of the twelfth method includes:

[0114] Inductor elements of the sixth or seventh type;

[0115] The pads are located at the ends of the aforementioned inductor wiring;

[0116] Vertical wiring connects the aforementioned pads and external terminals.

[0117] According to the twelfth embodiment of the inductor component, by using vertical wiring, the portion extending from the side of the inductor component to the external terminals is eliminated, thereby reducing the area occupied by the inductor component. As a result, the inductor component can be miniaturized.

[0118] The inductor component of the thirteenth embodiment, compared to the inductor component of the twelfth embodiment, includes:

[0119] As the first magnetic layer of the aforementioned magnetic layer; and

[0120] The second magnetic layer is disposed along the third imaginary plane. In the first direction, the second imaginary plane is located between the third imaginary plane and the first imaginary plane, and the third imaginary plane is parallel to the first imaginary plane and the second imaginary plane.

[0121] According to the inductor component of the thirteenth method, leakage flux can be reduced and the inductance acquisition efficiency can be improved.

[0122] The inductor component of the fourteenth method is the same as the inductor component of the twelfth or thirteenth method.

[0123] The aforementioned inductor wiring comprises multiple layers arranged along the aforementioned first direction.

[0124] According to the inductor component of the fourteenth method, the line length of the inductor can be extended, which can increase the degree of freedom in the design.

[0125] The inductor component of the fifteenth method is in either the thirteenth or fourteenth method.

[0126] Either the first magnetic layer or the second magnetic layer has a non-planar portion that is convex or concave relative to the first imaginary plane or the second imaginary plane.

[0127] According to the inductor component of the fifteenth method, leakage flux can be reduced and the inductance acquisition efficiency can be improved.

[0128] The inductor component of the sixteenth method is in any one of the inductor components of the thirteenth to fifteenth methods.

[0129] The roughness of the planar portion of the first magnetic layer is different from the roughness of the planar portion of the second magnetic layer located on the third imaginary plane.

[0130] According to the inductor component of the sixteenth embodiment, the degree of freedom in selecting the material of the magnetic layer can be increased. As a result, for example, the strength and adhesion of the blank can be improved.

[0131] Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. The following description is not intended to limit the present disclosure, but is merely illustrative and can be appropriately modified without departing from the spirit of the present disclosure. The accompanying drawings are schematic, and the scale of each dimension may not necessarily correspond to actual dimensions.

[0132] (First Implementation)

[0133] like Figure 1 As shown, the inductor component 1 of the first embodiment of this disclosure includes an inductor element 10. The inductor element 10 includes a magnetic layer 20 and a first inductor wiring 30.

[0134] like Figures 1-3 As shown, in this embodiment, the inductor element 10 further includes a second inductor wiring 40 and a first conductive portion 50. The inductor component 1 further includes a blank 2, a second conductive portion 60, an external terminal 70, and pad portions 81 and 82. The inductor element 10, the second conductive portion 60, and the pad portions 81 and 82 are located inside the blank 2, while the external terminal 70 is located outside the blank 2. The pad portions 81 and 82 may form part of the first inductor wiring 30 and the second inductor wiring 40, or they may have a different structure from the first inductor wiring 30 and the second inductor wiring 40.

[0135] As an example, the billet 2 has a generally rectangular parallelepiped shape. The height direction of the billet 2 is taken as the first direction (e.g., the Z direction), the direction of the shorter side of the billet 2 when viewed along the first direction Z is taken as the second direction (e.g., the Y direction), and the direction of the longer side of the billet 2 when viewed along the first direction Z is taken as the third direction (e.g., the X direction). Figure 2 and Figure 3 As shown, the blank 2 includes a first main surface 201 and a second main surface 202 located at both ends in the first direction Z.

[0136] The blank 2 comprises four insulating layers 210, 220, 230, and 240 stacked sequentially along the first direction Z. Insulating layer 220 is an example of a first insulating layer, covering the first inductor wiring 30 and the pad portion 81. Insulating layer 230 covers the magnetic layer 20. Insulating layer 240 covers the second inductor wiring 40 and the pad portion 82. A first main surface 201 is formed by the outer surface of insulating layer 240 in the first direction Z, and a second main surface 202 is formed by the outer surface of insulating layer 210 in the first direction Z. Insulating layer 210 is an example of a second insulating layer located further away from the magnetic layer 20 in the first direction Z than insulating layer 220, and having a smaller coefficient of linear expansion than insulating layer 220.

[0137] Insulating layers 210, 220, 230, and 240 respectively comprise epoxy resin, polyimide, phenolic resin, or combinations thereof. Insulating layer 210 may comprise insulating filler or inorganic insulating materials such as SiO2 and TaO. As an example, insulating layer 220 is in direct contact with the planar portion 26 of the magnetic layer 20 described later, and has a CTE (coefficient of thermal expansion) of 2 ppm / ℃ or more and 60 ppm / ℃ or less.

[0138] As an example, the inductor element 10 includes three first inductor wirings 30, two second inductor wirings 40, and six first conductive portions 50. The first inductor wirings 30, the second inductor wirings 40, and the first conductive portions 50 constitute at least a portion of a so-called helical inductor (coil) that rotates about a rotation axis AX extending along a second direction Y. The so-called helical shape refers to a shape in which the overall number of turns of the coil is greater than one turn, but the number of turns of the coil in a cross-section orthogonal to the rotation axis AX is less than one turn. "More than one turn" means that in a cross-section orthogonal to the rotation axis AX, the wirings of the coil have radially adjacent portions. "Less than one turn" means that in a cross-section orthogonal to the rotation axis AX, the wirings of the coil do not have radially adjacent portions.

[0139] The magnetic layer 20 exhibits uniaxial magnetic anisotropy. In this configuration, when viewed along the first direction Z, the magnetic layer 20 has a rectangular shape and is located inside the outer shape of the inductor component 1. "Rectangular shape" includes "approximately rectangular shape." The outer shape of the inductor component 1 is, for example, the outer shape of the blank 2. Eight pad portions 81 and 82 are located on both sides of the long side of the magnetic layer 20. Pad portion 81 is located on the same side as the first inductor wiring 30 relative to the magnetic layer 20, and pad portion 82 is located on the same side as the second inductor wiring 40 relative to the magnetic layer 20.

[0140] An example of the B-H curve of magnetic layer 20 is shown below. Figure 4 .exist Figure 4In the diagram, the easy axis is indicated by a solid line, and the difficult axis by a dashed line. One method for determining the easy and difficult axes of uniaxial magnetic anisotropy is to measure the B-H curve of the magnetic layer 20 using a VSM (vibrating sample magnetometer). In this method, the B-H curve is measured after rotating the sample by 90 degrees; the side of the B-H curve that is upright is taken as the easy axis, and the side that is horizontal is taken as the difficult axis. To eliminate the influence of shape anisotropy, O-shaped or square-shaped samples are preferred, but other types of samples can also be used.

[0141] like Figure 3 As shown, the magnetic layer 20 is disposed along a first imaginary plane P1. In this embodiment, the first imaginary plane P1 is a plane (e.g., an XY plane) extending in a direction intersecting the height direction (e.g., the first direction Z) of the blank 2, located at the boundary between the insulating layer 220 and the insulating layer 230. The magnetic layer 20 has a planar portion 26 located on the first imaginary plane P1. The planar portion 26 is configured to have a roughness of 3 nm or more and 10 nm or less. "Roughness" is, for example, an arithmetic surface roughness Ra obtained in the range of 10 μm of the planar portion 26. The arithmetic surface roughness Ra is obtained, for example, using a laser microscope VK-X1000 manufactured by Keyence Corporation, according to JIS B 0601. When it is difficult to obtain from the vertical direction of the planar portion 26, the line roughness (LER) obtained from the vertical cross-section of the planar portion 26 can also be used as the "roughness" of the planar portion 26.

[0142] Magnetic layer 20 is configured such that the angle θ between the difficult or easy axis and the rotation axis AX (refer to) Figure 1 The absolute value of the angle between the magnetic layer 20 and the rotation axis AX is greater than zero and less than 10 degrees (for example, the easy or difficult axis is approximately parallel to the rotation axis AX). For example, the easy axis extends along the short side direction of the magnetic layer 20 (that is, the second direction Y), and the difficult axis extends along the long side direction of the magnetic layer 20 (that is, the third direction X). In this case, the absolute value of the angle between the easy axis of the magnetic layer 20 and the rotation axis AX is greater than zero and less than 10 degrees. For example, the easy axis extends along the long side direction of the magnetic layer 20 (that is, the third direction X), and the difficult axis extends along the short side direction of the magnetic layer 20 (that is, the second direction Y). In this case, the absolute value of the angle between the difficult axis of the magnetic layer 20 and the rotation axis AX is greater than zero and less than 10 degrees.

[0143] The magnetic layer 20 includes an inorganic insulating layer 21 and an inorganic magnetic layer 22 stacked along the first direction Z (see reference). Figure 10As an example, the magnetic layer 20 is composed of six inorganic insulating layers 21 and five inorganic magnetic layers 22. The inorganic insulating layers 21 are located at both ends of the magnetic layer 20 in the first direction Z. The inorganic insulating layers 21 contain, for example, TaO or SiO2. The inorganic magnetic layers 22 contain, for example, CZT (Co-Zr-Ta) or FeNi alloy. If the inorganic magnetic layers 22 are thickened, eddy currents may be generated within the magnetic layer 20. Therefore, the inorganic magnetic layers 22 are configured, for example, to be thinner than the skin depth derived from the circuit operating frequency (e.g., the switching frequency in the case of a DC-DC converter).

[0144] like Figure 3 As shown, the magnetic layer 20 is configured such that its thickness T0, which is the dimension in the first direction Z, is smaller than the thickness T1 of the first inductor wiring 30 and the thickness T2 of the second inductor wiring 40.

[0145] The first inductor wiring 30 is located on one side of the magnetic layer 20 in the first direction Z and extends along an imaginary plane P that intersects the first direction Z. The second inductor wiring 40 is located on the other side of the magnetic layer 20 in the first direction Z. In this configuration, the imaginary plane P is located at the boundary of the insulating layers 210 and 220 of the blank 2.

[0146] like Figure 1 As shown, when viewed in the first direction Z and along the direction from the second inductor wiring 40 toward the first inductor wiring 30, the first inductor wiring 30 connects one of the four pad portions 81 located on one side of the magnetic layer 20 in the third direction X and one of the four pad portions 81 located on the other side of the magnetic layer 20 in the third direction X. The first inductor wiring 30 connects two pad portions 81 located at different positions in the second direction Y and is inclined relative to the rotation axis AX. The three first inductor wirings 30 extend substantially parallel to each other.

[0147] like Figure 3 As shown, the first inductor wiring 30 is disposed along the second imaginary plane P2. The second imaginary plane P2 is located at a distance from the first imaginary plane P1 in the first direction Z and extends parallel to the first imaginary plane P1. "Parallel" includes "approximately parallel".

[0148] like Figure 1 As shown, when viewed in the first direction Z and along the direction from the second inductor wiring 40 toward the first inductor wiring 30, the second inductor wiring 40 connects one of the four pad portions 82 located on one side of the magnetic layer 20 in the third direction X and one of the four pad portions 82 located on the other side of the magnetic layer 20 in the third direction X. The second inductor wiring 40 connects two pad portions 82 located at approximately the same position in the second direction Y and is approximately orthogonal to the rotation axis AX. The two second inductor wirings 40 extend approximately parallel to each other.

[0149] The first inductor wiring 30 and the second inductor wiring 40 may contain good conductor materials such as copper, silver, gold, or alloys thereof. The first inductor wiring 30 and the second inductor wiring 40 may also be metal films formed by plating, evaporation, sputtering, etc., or metal sintered bodies formed by coating with conductor paste and sintering. The first inductor wiring 30 and the second inductor wiring 40 may also be multilayer structures formed by stacking multiple metal layers. The first inductor wiring 30 and the second inductor wiring 40 are configured to be no thicker than the magnetic layer 20. With such a configuration, an inductor component with low DC resistance and high inductance acquisition efficiency can be achieved.

[0150] The first conductive section 50 electrically connects the first inductor wiring 30 and the second inductor wiring 40. In this embodiment, as... Figure 2 As shown, the first conductive part 50 extends along the first direction Z and connects a pair of pads 81 and 82 that are approximately at the same position in the first direction Z.

[0151] The second conductive section 60 electrically connects at least one of the first inductor wiring 30 and the second inductor wiring 40 to the external terminal 70. In this embodiment, as... Figure 2 As shown, the second conductive portion 60 extends along the first direction Z and connects the pad portions 82 located at both ends in the second direction Y and the external terminal 70. Through this connection, the second inductor wiring 40 and the external terminal 70 are electrically connected.

[0152] External terminals 70 are located on the first main surface 201 of the blank 2. In this embodiment, the inductor component 1 has two external terminals 70. Each external terminal 70 has a base layer and a plating layer covering the base layer, configured to cover four pad portions 82 located on the same side of the magnetic layer 20 in the third direction X when viewed along the first direction Z. Figure 2 As shown, each external terminal 70 has four recesses 73 corresponding to the four pad portions 82. When viewed along the first direction Z, each recess 73 is positioned overlapping the pad portion 82 and recessed into the magnetic layer 20.

[0153] The base layer of the first conductive part 50, the second conductive part 60, and the external terminal 70 includes, for example, a conductive material such as Ni or Sn. The first conductive part 50 and the second conductive part 60 can be made of a single layer of conductive material or of multiple layers of conductive material. The external terminal 70 can also be made of a single layer of conductive material.

[0154] like Figure 1 As shown, when viewed along the first direction Z, the structures constituting the inductor component 1 are symmetrically arranged with respect to the center point CP of the blank 2 located on the rotation axis AX.

[0155] Reference Figure 2 , Figure 3 as well as Figures 5-16 An example of a method for manufacturing inductor component 1 will be described. Figure 5 , Figure 7 , Figure 11 , Figure 13 as well as Figure 15 Is along Figure 1 The attached diagram corresponds to the cross-section of line X1-X2. Figure 6 , Figures 8-10 , Figure 12 , Figure 14 as well as Figure 16 Is along Figure 1 The attached figure shows the cross-section of line Y1-Y2.

[0156] like Figure 5 and Figure 6 As shown, an insulating layer 210 is formed on a substrate 1000, and a first inductor wiring 30 and a pad portion 81 are formed on the insulating layer 210 to form a first laminate 1001. The substrate 1000 may be, for example, a substrate with high insulation properties capable of suppressing eddy currents (e.g., a semiconductor substrate, glass substrate, organic resin substrate, or ceramic). The insulating layer 210 is formed, for example, by coating an organic resin onto the substrate 1000 and then curing it. The first inductor wiring 30 and the pad portion 81 are formed, for example, by seed formation (sputtering Ti / Cu), resist coating, development, exposure, electrolytic plating, resist stripping, and seed etching.

[0157] like Figure 7 and Figure 8 As shown, an insulating layer 220 covering the first inductor wiring 30 and the pad portion 81 is formed on the insulating layer 210 of the first laminate 1001, thereby forming the second laminate 1002. The insulating layer 220 is formed, for example, by coating the insulating layer 210 with an organic resin and curing it. The surface 221 of the insulating layer 220 is adjusted to a desired roughness by resist patterning and dry etching.

[0158] like Figure 9 As shown, a magnetic layer 20 is formed on the surface 221 of the insulating layer 220 of the second laminate 1002, thus forming a third laminate 1003. The portion of the magnetic layer 20 opposite to the surface 221 of the insulating layer 220 constitutes a planar portion 26. By patterning the surface 221 of the insulating layer 220 with a photoresist and dry etching to a desired roughness, the planar portion 26 of the magnetic layer 20 opposite to the surface 221 of the insulating layer 220 can be adjusted to the same roughness. Figure 10As shown, the magnetic layer 20 comprises a plurality of inorganic insulating layers 21 and a plurality of inorganic magnetic layers 22 alternately stacked along a first direction Z. The magnetic layer 20 is formed, for example, by repeated sputtering of insulating and magnetic layers. By sputtering the magnetic layer 20 in a magnetic field, the atoms are positioned at desired locations, with the applied magnetic field direction being the easy axis direction. After forming the magnetic layer 20, it can be formed at desired locations through resist coating, exposure, development, etching, and resist stripping.

[0159] like Figure 11 and Figure 12 As shown, an insulating layer 230 is formed on the insulating layer 220 of the third laminate 1003, and a conductive opening 501 is formed in the insulating layer 230 to form a fourth laminate 1004. The insulating layer 230 is formed, for example, by coating the insulating layer 220 with an organic resin and curing it. The conductive opening 501 is formed, for example, using a laser, to extend through the insulating layer 230 along the first direction Z and extend into the insulating layer 220, with the pad portion 81 exposed from the bottom surface.

[0160] like Figure 13 and Figure 14 As shown, a first conductive portion 50 is formed in the conductive opening 501 of the fourth laminate 1004, and a pad portion 82 is formed on the first conductive portion 50 and on the insulating layer 230. A second inductor wiring 40 is formed on the insulating layer 230, thus forming a fifth laminate 1005. The second inductor wiring 40 and the pad portion 82 are formed, for example, by seed formation (sputtering Ti / Cu), resist coating, development, exposure, electrolytic plating, resist stripping, and seed etching.

[0161] like Figure 15 and Figure 16 As shown, on the insulating layer 230 of the fifth laminate 1005, an insulating layer 240 covering the second inductor wiring 40 and the pad portion 82 is formed, and a conductive opening 601 is formed in the insulating layer 240, and an external terminal 70 is formed, thus forming the sixth laminate 1006. The insulating layer 240 is formed, for example, by coating the insulating layer 230 with an organic resin and curing it. The conductive opening 601 is formed, for example, using a laser, extending along the first direction Z, and the pad portion 82 is exposed from the bottom surface. The external terminal 70 is formed, for example, by electroless Ni / Au plating. By performing copper-filled electroplating before performing electroless Ni / Au plating, it is possible to form an external terminal 70 without the recess 73.

[0162] The substrate 1000 is removed from the formed sixth-layer stack 1006 and then monolithized to manufacture the product. Figure 2 and Figure 3 The inductor component 1 shown. The substrate 1000 is removed, for example, by grinding or peeling.

[0163] The inductor element 10 can perform the following effects.

[0164] The inductor element 10 includes: a magnetic layer 20 disposed along a first imaginary plane P1 and having uniaxial magnetic anisotropy; and inductor wiring (in this embodiment, first inductor wiring 30) disposed at a position spaced apart from the first imaginary plane P1 in a first direction intersecting the first imaginary plane P1 and disposed along a second imaginary plane P2 parallel to the first imaginary plane P1. The roughness of the planar portion 26 of the magnetic layer 20 located on the first imaginary plane P1 is 3 nm or more and 10 nm or less. With this configuration, the adhesion of the magnetic layer 20 can be ensured, and the inductance acquisition efficiency can be improved. For example, when the roughness of the planar portion 26 of the magnetic layer 20 is less than 3 nm, the contact area of ​​the magnetic layer 20 is reduced, and its adhesion is decreased. When the roughness of the planar portion 26 of the magnetic layer 20 is greater than 10 nm, the crystal structure of the magnetic material contained in the magnetic layer 20 is randomly arranged, the uniaxial magnetic anisotropy of the magnetic layer 20 is destroyed, and the inductance acquisition efficiency cannot be improved.

[0165] exist Figure 17 The diagram shows the relationship between the roughness of the planar portion 26 of the magnetic layer 20 and the CTE of the insulating layer 220 that is in direct contact with the planar portion 26. Figure 17 In the diagram, "〇" indicates that the magnetic layer 20 has uniaxial magnetic anisotropy, and "×" indicates that the magnetic layer 20 does not have uniaxial magnetic anisotropy. For example... Figure 17 As shown, when the roughness Ra of the planar portion 26 satisfies "3nm ≤ roughness Ra ≤ 10nm", the magnetic layer 20 is highly likely to have uniaxial magnetic anisotropy. When the CTE of the insulating layer 220, which is in direct contact with the planar portion 26, satisfies "2ppm / ℃ ≤ CTE ≤ 60ppm / ℃", the magnetic layer 20 is even more likely to have uniaxial magnetic anisotropy. Furthermore, when it satisfies "2ppm / ℃ ≤ CTE ≤ 35ppm / ℃", the magnetic layer 20 reliably possesses uniaxial magnetic anisotropy. For example, the magnetic layer 20 is a laminate formed by sputtering (e.g., Figure 10 The magnetic layer 20 shown includes an inorganic insulating layer 21 and an inorganic magnetic layer 22. When the CTE of the insulating layer 220 is greater than 35 ppm / °C, strain occurs during the heat treatment when forming the magnetic layer 20, causing the crystal structure of the magnetic layer 20 to align randomly. In this case, the uniaxial magnetic anisotropy of the magnetic layer 20 is disrupted, making it impossible to improve the inductance acquisition efficiency. In other words, by configuring the inductor element 10 such that the CTE of the insulating layer 220 is 2 ppm / °C or higher and 35 ppm / °C or lower, the inductance acquisition efficiency can be improved more reliably.

[0166] The inductor component 1 includes an inductor element 10 and an external terminal 70 that is electrically connected to the inductor wiring. With this structure, the inductor component 1 can be easily mounted onto a circuit board.

[0167] The inductor wiring is a first inductor wiring 30 located on one side of the magnetic layer 20 in the first direction. The inductor element 10 includes a second inductor wiring 40 and a first conductive portion 50. The second inductor wiring 40 is located on the other side of the magnetic layer 20 in the first direction. The first conductive portion 50 electrically connects the first inductor wiring 30 and the second inductor wiring 40. The first inductor wiring 30, the second inductor wiring 40, and the first conductive portion 50 constitute at least a portion of an inductor that rotates about a rotation axis AX extending along a second direction intersecting the first direction. With this structure, since the inductor rotates about the magnetic layer 20, the magnetic flux density through the magnetic layer 20 is increased, enabling the inductor component 1 with a high Q value to be realized.

[0168] The absolute value of the angle θ between the easy or difficult axis of the magnetic layer 20 and the rotation axis AX is greater than zero degrees and less than 10 degrees. With this structure, since most of the magnetic flux is oriented towards the anisotropic axis, the inductance acquisition efficiency and DC superposition characteristics can be improved. In addition, since the first inductor wiring 30 and the second inductor wiring 40 extending along the imaginary plane P and the first conductive portion 50 constitute part of the inductor, the inductor component 1 can be easily miniaturized (e.g., made into a thin film).

[0169] The inductor component 1 can be configured as follows.

[0170] The planar portion 26 of the magnetic layer 20 can also have the same roughness across the entire surface. In this case, since a patterning process is not required, the manufacturing cost of the inductor element 10 can be reduced. "Same roughness" includes a roughness within a realistic range of deviations (e.g., an error within ±10%).

[0171] The portion 31 of the inductor wiring (e.g., the first inductor wiring 30) located in the second imaginary plane P2 (see reference) Figure 3 The roughness can also be greater than that of the planar portion 26 of the magnetic layer 20. This configuration improves the adhesion of the inductor wiring. The roughness of the inductor wiring can, for example, be obtained in a manner similar to that of the planar portion 26.

[0172] like Figure 18 As shown, the inductor component 1 may also have a first conductive portion 50 that, when viewed along the rotation axis AX, at least a portion overlaps with the magnetic layer 20. In this case, since the magnetic flux can be blocked through the first conductive portion 50, noise leakage from the inductor component 1 to the surrounding environment can be prevented.

[0173] like Figure 19 and Figure 20 As shown, the inductor component 1 may also have a first conductive portion 50 extending through the magnetic layer 20 along the first direction Z. That is, the magnetic layer 20 may have a through-hole 23 that can accommodate the first conductive portion 50. In this case, since the magnetic layer 20 can be maximized along the imaginary plane P, the inductance acquisition efficiency of the inductor component 1 can be improved, and leakage flux can be suppressed. Figure 20 and Figure 20 In the inductor component 1, the magnetic layer 20 has a plurality of through holes 23 corresponding to each of the first conductive portions 50. Each through hole 23 is configured to accommodate a first conductive portion 50 while a gap is formed between it and the first conductive portion 50. The shape of each through hole 23 is not limited to a rectangular shape; it can also be circular or other polygonal shapes.

[0174] Figure 19 and Figure 20 The inductor component 1 is mounted on the substrate 4. That is, the substrate 4 is connected via the insulating layer 210. The substrate 4 includes, for example, a high-resistivity silicon substrate, a glass substrate, and a ceramic substrate. Inside the substrate 4, terminals 90 capable of being electrically connected to external circuits are formed. Figure 19 and Figure 20 The inductor component 1 has a vertical wiring 61 that extends through an insulating layer 210 along a first direction Z and connects a pad portion 81 and a terminal 90. That is, Figure 19 and Figure 20 The inductor component 1 is configured to be electrically connected to an external circuit via vertical wiring 61 and terminals 90. The vertical wiring 61 increases the freedom of mounting position of the inductor component 1.

[0175] like Figure 21 As shown, the inductor component 1 can also have a blank 2 with different surface roughnesses for the first main surface 201 and the second main surface 202. In this case, by molding the main surface with the larger surface roughness, the adhesion to the molding material can be improved. Figure 21 In the inductor component 1, the external terminal 70 is located on the first main surface 201, and the blank 2 has a recess 203 recessed from the first main surface 201 in the first direction Z and toward the magnetic layer 20. Figure 21 In the inductor component 1, the blank 2 has two recesses 203, but it may also have one recess 203, or more than three recesses 203. As an example, the blank 2 is configured such that the first main surface 201 is located near the magnetic layer 20 compared to the external terminal 70. Figure 21 In the inductor component 1, since the external terminal 70 is located at the position furthest from the magnetic layer 20, the inductor component 1 can be easily mounted on the substrate 4, etc.

[0176] like Figure 22 As shown, the inductor component 1 can also be configured such that: the magnetic layer 20 has a first end portion 25 opposite to the first conductive portion 50 in the third direction X, and the first conductive portion 50 has a second end portion 51 opposite to the magnetic layer 20 in the third direction X, with the first end portion 25 and the second end portion 51 inclined in the same direction relative to the first direction Z. With this configuration, since the first end portion 25 of the magnetic layer 20 and the second end portion 51 of the first conductive portion 50 can be brought close together, the inductor can be miniaturized. Furthermore, by bringing the first end portion 25 of the magnetic layer 20 and the second end portion 51 of the first conductive portion 50 close together, the volume of the magnetic layer 20 can be increased, and the inductance efficiency can be improved. The term "inclined in the same direction" refers, for example, to a situation where, when viewed in a cross-section including the first direction Z and the third direction X, the angle θ0 formed by the extension line of the first end portion 25 and the extension line of the second end portion 51 is in the range of zero degrees or more and less than 45 degrees. Figure 21 As shown, the portion surrounded by the first inductor wiring 30, the second inductor wiring 40, and the first conductive portion 50 constitutes the core portion 3.

[0177] The magnetic layer 20 can be tilted at only one end in the third direction X, or at both ends in the third direction X. The magnetic layer 20 is tilted at both ends in the third direction X (that is, the magnetic layer 20 has a first end 25 at each end in the third direction X). Furthermore, assume that it is stacked in the order of the first inductor wiring 30 and the second inductor wiring 40. In this case, when viewed in a cross-section including the first direction Z and the third direction X, the magnetic layer 20 has a trapezoidal shape in the first direction Z, with the end near the first inductor wiring 30 being the longer side and the end near the second inductor wiring 40 being the shorter side. The first conductive portion 50 has a trapezoidal shape opposite to the positions of the long and short sides of the magnetic layer 20 (in other words, an inverted trapezoidal shape). When the first conductive portion 50 has an inverted trapezoidal shape relative to the magnetic layer 20, the coverage of the seed layer is improved. In this case, because the magnetic layer 20 has a trapezoidal shape, it is easy to maintain the distance between the magnetic layer 20 and the first conductive portion 50, and insulation can be easily ensured. The stacking order of the first inductor wiring 30 and the second inductor wiring 40 can be determined based on the direction of the seed or the shape of the first inductor wiring 30 and the second inductor wiring 40.

[0178] When the tilt angle of the second end 51 of the first conductive portion 50 is smaller than the tilt angle of the first end 25 of the magnetic layer 20, the first conductive portion 50 can be reduced, thus increasing the volume of the magnetic layer 20. When the tilt angle of the second end 51 of the first conductive portion 50 is larger than the tilt angle of the first end 25 of the magnetic layer 20, and the first conductive portion 50 has an inverted trapezoidal shape, the coverage of the seed layer can be improved. When the tilt angle of the second end 51 of the first conductive portion 50 is larger than the tilt angle of the first end 25 of the magnetic layer 20, and the first conductive portion 50 has a trapezoidal shape, the first conductive portion 50 acts as an anchor, thus improving the adhesion strength between the first conductive portion 50 and the first inductor wiring 30. As an example, the tilt angle is defined as the angle relative to an imaginary straight line extending along the first direction Z.

[0179] Reference Figure 23 and Figure 24 An example of a method for forming a magnetic layer 20 with a trapezoidal shape having first end 25 at both ends in a third direction X (forming Figure 22 An example of the method for the inductor component 1 will be described.

[0180] like Figure 23 As shown, a positively conical resist 310 is formed on the magnetic layer 20 of the third stack 1003. The so-called positively conical shape refers to a shape that gradually tapers along the first direction Z from the first inductor wiring 30 toward the second inductor wiring 40. If the resist 310 and the magnetic layer 20 are etched by dry etching, the resist 310 retreats while moving towards... Figure 23 The magnetic layer 20 is etched in the direction indicated by the arrow, thus forming... Figure 24 The trapezoidal magnetic layer 20 is shown.

[0181] Reference Figure 25 and Figure 26 An example of a method for forming a magnetic layer 20 with a first end 25 at both ends in a third direction X (the tilt direction of the first end 25 in the magnetic layer 20 is the same as that of the magnetic layer 20). Figure 22 An example of the method of the opposite inductor component 1 will be described. In this case, the first end 25 is inclined away from the first conducting portion 50 along the first direction Z from the second inductor wiring 40 toward the first inductor wiring 30.

[0182] like Figure 25 As shown, a resist 320 with a generally rectangular cross-sectional shape is formed on the magnetic layer 20 of the third stack 1003. If wet etching is performed on the resist 320 and the magnetic layer 20, the etching proceeds from the portion where liquid displacement is easily achieved towards the oblique direction (…). Figure 25(As indicated by the middle arrow) the magnetic layer 20 is etched to form Figure 26 The magnetic layer 20 is shown in the shape of an inverted trapezoid.

[0183] The inductor component 1 may have at least one inductor element 10.

[0184] The inductor component 1 is not limited to having an external terminal 70 located on the first main surface 201 of the blank 2. It may also have an external terminal 70 located on the second main surface 202 of the blank 2, or it may have external terminals 70 located on both the first main surface 201 and the second main surface 202 of the blank 2.

[0185] The magnetic layer 20 is not limited to the case of comprising an inorganic insulating layer 21 and an inorganic magnetic layer 22 stacked along the first direction. For example, the magnetic layer 20 may also be composed of a composite material of resin and magnetic filler. In this case, the resin may include, for example, epoxy resin, polyimide, acrylic resin, phenolic resin, and combinations thereof. The magnetic filler may include, for example, FeSiCr-based, FeNi-based, FeSi-based, pure Fe-based, and combinations thereof.

[0186] (Second Implementation)

[0187] Reference Figures 27-51 The inductor component 1 having the inductor element 10 of the second embodiment of this disclosure will be described. Figures 27-51 The image shows an inductor component with a roughly rectangular shape, placed on a horizontal plane with the substrate side facing down. The long side direction is taken as the X-axis, the short side direction as the Y-axis, and the height direction, which is orthogonal to them, as the Z-axis.

[0188] Inductor component 1 has a first magnetic layer 2030 formed on a substrate 2060, a first insulating layer 2050A formed on the first magnetic layer 2030, an inductor wiring 2010 formed on the first insulating layer 2050A, and a second insulating layer 2050B covering the inductor wiring 2010. A second magnetic layer 2040 is formed on the second insulating layer 2050B. The inductor wiring 2010 extends along a plane and has pad portions 2010A and 2010B at both ends. Vertical wiring 2020 extending perpendicularly to the plane extending from the pad portions 2010A and 2010B at both ends is formed. In inductor component 1, the inductor wiring 2010 is disposed between the first magnetic layer 2030 and the second magnetic layer 2040 in the Z-axis direction. In other words, the inductor component 1 includes an inductor element 10, pad portions 2010A and 2010B, and vertical wiring 2020. By using the vertical wiring 2020, the portion extending from the side of the inductor component 1 to external terminals is eliminated, thus reducing the area occupied by the inductor component 1. As a result, the inductor component 1 can be miniaturized. The inductor element 10 includes a blank 2, a first magnetic layer 2030, a second magnetic layer 2040 located inside the blank 2, inductor wiring 2010, and a substrate 2060. The second magnetic layer 2040 is disposed along a first imaginary plane P1, the inductor wiring 2010 is disposed along a second imaginary plane P2, and the first magnetic layer 2030 is disposed along a third imaginary plane P3. The third imaginary plane P3 is parallel to the first imaginary plane P1 and the second imaginary plane P2, and in a first direction (e.g., the Z direction), the second imaginary plane P2 is located between the third imaginary plane P3 and the first imaginary plane P1. In other words, the inductor wiring 2010 is located between the first magnetic layer 2030 and the second magnetic layer 2040 in the first direction Z. This structure reduces leakage flux and improves inductance efficiency. "Parallel" includes "approximately parallel." For example, the roughness of the planar portion 2031 of the first magnetic layer 2030 is different from the roughness of the planar portion 2041 of the second magnetic layer 2040. This structure increases the freedom of material selection for both the first magnetic layer 2030 and the second magnetic layer 2040. As a result, for example, the strength and adhesion of the blank 2 can be improved.

[0189] In this embodiment, a high-resistivity silicon substrate is used as the substrate 2060. However, it is not limited to this; any other inorganic substrate (inorganic material substrate), such as a glass substrate or a ceramic substrate, can also be used as the substrate 2060. For example, by including an inorganic material substrate such as a Si substrate, glass substrate, or ceramic substrate, which is harder than organic resin, in the blank 2, the strength of the blank 2 can be improved. In the inductor component 1, for example, from the viewpoint of suppressing the generation of eddy currents, a substrate with high insulation is used. The thickness of the substrate 2060 can be 5 μm, but it is not limited to this. In this embodiment, since the layers constituting the inductor component 1, such as the first magnetic layer 2030, are formed on an inorganic substrate, chip strength can be ensured even if it is thin. The substrate 2060 has a roughness smaller than the planar portion 2031 of the first magnetic layer 2030 and the planar portion 2041 of the second magnetic layer 2040. With this structure, the roughness of the first insulating layer 2050A and the second insulating layer 2050B of the blank 2 can be easily adjusted.

[0190] For reference Figure 44 As will be described later, an inductor component 1 without a substrate 2060 can also be used. In addition, an organic insulating layer can be formed between the substrate 2060 and the first magnetic layer 2030.

[0191] The first magnetic layer 2030 and the second magnetic layer 2040 are laminates comprising an inorganic insulating layer 21 and an inorganic magnetic layer 22 (see reference). Figure 32 The thicknesses of the first magnetic layer 2030 and the second magnetic layer 2040 are typically around 5 to 6 μm, but are not limited to this. The materials and detailed structures of the first magnetic layer 2030 and the second magnetic layer 2040 will be described in more detail in the description of the manufacturing method.

[0192] In this embodiment, the first insulating layer 2050A and the second insulating layer 2050B are formed of polyimide. However, this is not a limitation; other organic resins, such as epoxy resin and phenolic resin, or combinations thereof, can also be used, and insulating fillers may be included. Furthermore, they can also be formed from inorganic insulators such as SiO2 or TaO. In this embodiment, the thickness of the first insulating layer 2050A is 5 μm, but it is not limited to this. The thickness of the second insulating layer 2050B is the value obtained by adding approximately 2 to 10 μm to the thickness of the inductor wiring 10.

[0193] The inductor wiring 2010 and vertical wiring 2020, each with pads 2010A and 2010B at both ends, are formed of a low-resistance conductive material, such as copper, silver, or gold. Preferably, a conductor containing copper or a copper compound is used. The vertical wiring 2020 is electrically connected to the inductor wiring 2010 via the pads 2010A and 2010B at both ends. In this embodiment, a flat wire with a cross-sectional dimension of 40μm × 20μm is used as the inductor wiring 2010, but it is not limited to this. Flat wires of different sizes or wiring other than flat wires can also be used.

[0194] The vertical length of the vertical wiring 2020 is determined by the thickness of the second insulating layer 2050B and the second magnetic layer 2040, as well as the amount of protrusion from the surface of the second magnetic layer 2040. In this embodiment, the amount of protrusion from the surface of the second magnetic layer 2040 of the vertical wiring 2020 is 5 μm, but it is not limited to this.

[0195] The inductor component 1 constructed as described above has a roughly rectangular parallelepiped shape. If the length of the long side (X-axis direction) is set as L, the length of the short side (Y-axis direction) is set as W, and the length of the height (Z-axis direction) is set as T, then it has dimensions of L×W×T=1.0mm×0.5mm×0.5mm. However, this is just an example; inductor components with other arbitrary dimensions can be used.

[0196] By electrically connecting the vertical wiring 2020 protruding from the surface of the second magnetic layer 2040 to an external circuit, current can flow into the inductor wiring 2010 through the vertical wiring 2020 to generate magnetic flux, thus functioning as an inductor.

[0197] like Figure 27 As shown, the vertical wiring 2020 is formed such that the cross-sectional area increases from the end face 2020A on the opposite side to the end face 2020B that contacts the pad portions 2010A and 2010B. As a result, the connection strength with external circuits or external terminals in the end face 2020A is improved, and connection resistance can be suppressed.

[0198] In this method, such as Figure 27 As shown, the vertical wiring 2020 extends through the second magnetic layer 2040. Thus, when viewed from above, the second magnetic layer 2040 is formed to cover the entire circumference of the vertical wiring 2020, and the area of ​​the second magnetic layer 2040 is maximized in the planar direction. This improves the inductor's acquisition efficiency and suppresses leakage flux.

[0199] In the inductor component 1, multiple conductive layers are formed on the end face 2020A of the vertical wiring 2020. For example, by forming a Ni layer as a conductive layer on the end face 2020A, electromigration resistance can be provided, and by forming an Au layer or a Sn layer as a conductive layer, solder wetting properties can be provided. Thus, appropriate functions can be provided for connection with external circuits.

[0200] The inductor component 1 has pad portions 2010A and 2010B arranged at both ends in the long side direction (X-axis direction). The inductor wiring 2010 extends in a serpentine pattern from one pad portion 2010A (2010B) to draw a smooth curve in the long side direction and reaches the other pad portion 2010B (2010A). Thus, a so-called zigzag inductor is constructed.

[0201] The first magnetic layer 2030 and the second magnetic layer 2040, arranged vertically and horizontally sandwiching the inductor wiring 2010, have uniaxial magnetic anisotropy along the same axis. In this configuration, the two anisotropic axes (easy axis and hard axis) of the first magnetic layer 2030 and the second magnetic layer 2040 are aligned with the inductor component 1 when viewed from above (refer to...). Figure 26 The long side (X-axis direction) and short side (Y-axis direction) of the magnetic layer 2030 and the magnetic layer 2040 are parallel. Considering manufacturing deviations, "the first magnetic layer 2030 and the second magnetic layer 2040 have uniaxial magnetic anisotropy with the same axis" means that the angle between the anisotropy axes of the first magnetic layer 2030 and the second magnetic layer 2040 converges to less than 10 degrees.

[0202] The anisotropy axes of the first magnetic layer 2030 and the second magnetic layer 2040, which have uniaxial magnetic anisotropy with the same axis, will be described in more detail. As a method for determining the easy and difficult axes of uniaxial magnetic anisotropy, for example, the B-H curve can be obtained by rotating the sample by 90 degrees, measuring the magnetic layer using a VSM (vibrating sample type magnetometer), and obtaining the curve. The B-H curve is also called the hysteresis curve. An example of a measured B-H curve is shown below. Figure 28 . Figure 28 The vertical axis of the graph shows the magnetic flux density B (in tons), and the horizontal axis shows the magnetic field strength H (in meters).

[0203] If the permeability is set to μ, then the relationship B = μH holds. That is, Figure 28The slope of the B-H curve shown represents the permeability μ. A steeply rising B-H curve represents the easy axis (easily magnetized axis), while a gently sloping B-H curve represents the difficult axis (difficult to magnetize axis). If the direction of the magnetic flux generated by the current flowing in the inductor wiring 2010 is parallel to the easy axis, the acquisition efficiency of the inductor can be improved. On the other hand, if the direction of the magnetic flux generated by the current flowing in the inductor wiring 2010 is parallel to the difficult axis, the DC superposition characteristic can be improved or the iron loss can be reduced. Furthermore, for the test specimen for uniaxial magnetic anisotropy testing, a planar shape that is circular or square is preferred to eliminate the influence of shape anisotropy, but even shapes other than these can be measured.

[0204] In this method, there can be two cases where the first magnetic layer 2030 and the second magnetic layer 2040, which have uniaxial magnetic anisotropy, have the difficult axis oriented towards the long side direction (X-axis direction) and the easy axis oriented towards the short side direction (Y-axis direction), and the opposite case where the easy axis is oriented towards the long side direction (X-axis direction) and the difficult axis is oriented towards the short side direction (Y-axis direction).

[0205] The two ends of the inductor wiring 2010 are separated along one of the anisotropic axes (X-axis direction) of the uniaxial magnetic anisotropy, which is either the difficult or easy axis. Furthermore, the two ends of the inductor wiring 2010 may be at the same or different positions along the other anisotropic axis (Y-axis direction). Between the pads 2010A and 2010B at both ends, the inductor wiring 2010 extends in a serpentine pattern along one anisotropic axis (X-axis direction). It is particularly noteworthy that the inductor wiring 2010 does not extend orthogonally to one anisotropic axis (X-axis direction) throughout the entire region. That is, the inductor wiring 2010 extending between the pads 2010A and 2010B at both ends always has a vector component along one anisotropic axis (X-axis direction). There will be no situation where it lacks a vector component along one anisotropic axis (X-axis direction) and only has a vector component along the other anisotropic axis (Y-axis direction).

[0206] It can also be described as: the wiring centerline G passing through the center in the width direction relative to the inductor wiring 2010 (refer to...) Figure 26 It extends across the entire region without being orthogonal to an anisotropic axis (X-axis direction). Alternatively, it can be described as the wiring centerline G intersecting an anisotropic axis (X-axis direction) at an angle of less than 90 degrees.

[0207] In an inductor wiring extending along a plane, there is a spiral wiring. If the case of rotating the spiral wiring of the inductor wiring 360 degrees is considered as 1 turn, then in this method, it can also be described as an inductor wiring 2010 connection consisting of less than 0.5 turns.

[0208] When the inductor wiring 2010 extends in one anisotropic axis direction (e.g., the X-axis direction), due to the vector component in one anisotropic axis direction (e.g., the X-axis direction), most of the magnetic flux is directed towards the other anisotropic axis direction (e.g., the Y-axis direction). Assuming the inductor wiring 2010 has a region extending perpendicular to one anisotropic axis direction (e.g., the X-axis direction), in that region, all the magnetic flux is directed towards one anisotropic axis direction (e.g., the X-axis direction) and is therefore affected by it.

[0209] In this method, since the inductor wiring 2010 extends along one anisotropic axis (e.g., the X-axis), most of the magnetic flux is directed towards the other anisotropic axis (e.g., the Y-axis). This provides the effect of the magnetic flux being directed towards the other anisotropic axis (e.g., the Y-axis). Furthermore, since the inductor wiring 2010 extends across the entire area without being orthogonal to one anisotropic axis (e.g., the X-axis), the influence of one anisotropic axis (e.g., the X-axis) can be suppressed. This reliably results in improved inductance efficiency, improved DC superposition characteristics, or suppression of iron losses. Moreover, since the inductor component 1 is connected to an external circuit via the vertical wiring 2020, its mounting can be efficiently achieved.

[0210] When one anisotropic axis oriented towards the longer side (e.g., the X-axis) is a difficult axis, the inductance acquisition efficiency can be improved because most of the magnetic flux passes through the easy axis (e.g., the Y-axis). On the other hand, when one anisotropic axis oriented towards the longer side (e.g., the X-axis) is an easy axis, the DC superposition characteristic can be improved or the iron loss can be reduced because most of the magnetic flux passes through the difficult axis (e.g., the Y-axis).

[0211] When the inductor component 1 has a generally cuboid shape as described above, with the easy axis oriented towards the long side of the cuboid, the following advantages are also present. Considering the influence of shape-based magnetic anisotropy, using the long side as the easy axis facilitates anisotropic axis control. Furthermore, the two ends of the inductor wiring 10 are separately arranged in the direction of this easy axis, and the pads 10A and 10B at both ends are arranged to overlap at least partially when viewed from the direction of the easy axis. Therefore, since the inductor wiring extends non-orthogonally to the easy axis throughout the entire area, most of the magnetic flux passes through the easy axis, thereby improving DC superposition characteristics and suppressing iron losses.

[0212] Reference Figures 30 to 41 An example of a method for manufacturing the inductor component 1 according to the second embodiment will be described.

[0213] like Figure 30As shown, step 1, preparing substrate material S, is performed. Substrate material S is formed from high-resistivity silicon as described above. The thickness of substrate material S shown is thicker than the final thickness of substrate 2060. A process is performed where multiple inductor components are formed on one substrate material S, and then monolithically assembled to obtain individual inductor components 1. The surface 2061 of substrate 2060 has its roughness adjusted through CMP, grinding, and roughening treatments.

[0214] like Figure 31 As shown, process 2 involves stacking a first magnetic layer 2030 on a substrate material S. Figure 32 As shown in the enlarged view on the right, the first magnetic layer 2030 comprises a stack of an inorganic insulating layer 21 and an inorganic magnetic layer 22. The first magnetic layer 2030 is formed, for example, by sequentially stacking the inorganic insulating layer 21 and the inorganic magnetic layer 22 using a sputtering method. The inorganic insulating layer 21 can also be referred to as a sputtered insulating layer, and the inorganic magnetic layer 22 can also be referred to as a sputtered magnetic layer.

[0215] As a method for imparting uniaxial magnetic anisotropy to the first magnetic layer 2030, the following method can be exemplified. By sputtering an inorganic magnetic layer 22 in a magnetic field, the atoms inside the inorganic magnetic layer 22 can be arranged in desired positions, with the easy axis oriented towards the direction of the applied magnetic field. If the direction of the applied magnetic field is oriented towards the long side of the inductor component 1, the easy axis is oriented towards the long side; if the direction of the applied magnetic field is oriented towards the short side of the inductor component 1, the difficult axis is oriented towards the long side.

[0216] Inorganic insulating layers 21 can be formed from inorganic insulators such as SiO2 or TaO. In addition, inorganic magnetic layers 22 can be formed from CZT (Co-Zr-Ta), FeNi alloys, or composites of magnetic materials and inorganic materials. The interlayer thickness between inorganic magnetic layers 22 can also be thinner than that of each individual inorganic magnetic layer 22. Since the function of the inorganic insulating layers 21 is to insulate between the inorganic magnetic layers 22 or to protect the inorganic magnetic layers 22 from stress during processing, a thinner layer can increase the proportion of the magnetic layers in the overall laminate. By arranging inorganic insulating layers 21 such as TaO or SiO2 in a laminated structure between the inorganic insulating layers 21, the inorganic magnetic layers 22 are insulated from each other, and eddy currents in the inorganic magnetic layers 22 can be suppressed, thus enabling the realization of an inductor component 1 with a high Q value at high frequencies.

[0217] If the inorganic magnetic layer 22 is thickened with CZT (Co-Zr-Ta) or FeNi alloy, eddy currents will be generated within the magnetic layer. Therefore, in this embodiment, the inorganic magnetic layer 22 is configured to be thinner than the skin depth derived from the circuit operating frequency, such as the switching frequency of a DC-DC converter. Since the inductor is a current-carrying element, the inductor wiring 2010 is configured to have a specified thickness in order to carry a large amount of current.

[0218] As an example, the total thickness of the stacked inorganic magnetic layer 22 in the inductor component 1 is smaller than the thickness of the inductor wiring 2010. By making the inorganic magnetic layer 22 thinner, eddy currents generated within the inorganic magnetic layer 22 can be suppressed, and by increasing the thickness of the inductor wiring 2010, the inductor component 1 with low DC resistance and high inductor acquisition efficiency can be achieved.

[0219] In this configuration, the inorganic insulating layer 21 is located on the surface of the first magnetic layer 2030. Thus, since the inorganic insulating layer 21 is located on the surface of the first magnetic layer 2030, reliable insulation from peripheral components such as wiring can be achieved. The same applies to the second magnetic layer 2040, which will be described later.

[0220] like Figure 33 As shown, step 3 involves stacking a first insulating layer 2050A onto the first magnetic layer 2030 formed in step 2. Specifically, the first insulating layer 2050A can be formed by coating the first magnetic layer 2030 with polyimide, which is an organic resin, and then curing it.

[0221] like Figure 34 As shown, step 4 involves forming inductor wiring 2010 on the first insulating layer 2050A formed in step 3 using electrolytic plating. Specifically, a Ti / Cu seed layer is formed on the first insulating layer 2050A using sputtering. Then, a dry film resist (DFR) is laminated onto the seed layer, and photolithography is used to expose the seed layer in a shape corresponding to the inductor wiring. Then, power is supplied from the seed layer, and electrolytic plating is used to separate the plating on the exposed seed layer, forming the inductor wiring. Then, the seed layer is etched by stripping the dry film resist (DFR) to obtain isolated, insulated inductor wiring. This forms the inductor wiring 2010 with a serpentine shape.

[0222] like Figure 35 As shown, step 5 involves stacking a second insulating layer 2050B on a first insulating layer 2050A, which is disposed on an inductor wiring 2010 formed in step 4. Specifically, similar to the first insulating layer 2050A, the second insulating layer 2050B can be formed by coating polyimide, an organic resin, with the coating and curing it. Thus, the second insulating layer 2050B is formed to cover the side and top surfaces of the inductor wiring 2010. In this way, a first insulating layer 2050A and a second insulating layer 2050B surrounding the inductor wiring 2010 are formed. The surface 2051B of the second insulating layer 2050B has its roughness adjusted by CMP, grinding, and roughening treatment.

[0223] like Figure 36As shown, step 6 involves stacking a second magnetic layer 2040 on the second insulating layer 2050B formed in step 5. The second magnetic layer 2040 can also be stacked using the same steps as the first magnetic layer 2030. Similar to the first magnetic layer 2030, the easy axis of the inorganic magnetic layer can be aligned with the direction of the applied magnetic field by sputtering in a magnetic field. By making the applied magnetic field directions the same when forming the first magnetic layer 2030 and the second magnetic layer 2040, the first magnetic layer 2030 and the second magnetic layer 2040 can have uniaxial magnetic anisotropy along the same axis.

[0224] like Figure 37 As shown, step 7 involves forming a via from the surface side of the second magnetic layer 2040 formed in step 6. Specifically, a laser is irradiated from the surface side of the second magnetic layer to remove a portion of the second magnetic layer 2040 and the second insulating layer 2050B, forming a via BH that reaches the pad portions 2010A and 2010B of the inductor wiring 2010. The formed via BH has a shape that narrows as it extends from the surface side of the second magnetic layer into the interior.

[0225] like Figure 38 As shown, step 8 is performed to form a vertical wiring 2020 in the via BH formed in step 7. When the via BH is formed by laser irradiation, resin residue called smear is generated. First, a desmearing process is performed to remove the smear (resin residue) generated during laser processing. After the via BH is cleaned in the desmearing process, the vertical wiring 2020 is formed in the via BH. The vertical wiring 2020 can be formed in the via BH by electrolytic plating, using the same method as the inductor wiring 2010 described above. Using electrolytic plating allows for the low-resistance vertical wiring 2020 to be obtained at a low cost. The vertical wiring 2020 can also be formed by plating processes other than electrolytic plating, sputtering, vapor deposition, coating, etc.

[0226] like Figure 39 As shown, following step 8, step 9 involves grinding the substrate material S to form a substrate 2060 of a predetermined thickness. However, this is not a limitation; if the thickness of the substrate material S is a predetermined thickness, step 9 can be omitted. For example, if a temporary bonding layer is pre-formed on the substrate material S, and a first magnetic layer 2030 is formed on the temporary bonding layer, the substrate material S can be removed from the first magnetic layer 2030 after steps 1 to 8. Thus, a result similar to... Figure 44 The inductor component 1 shown is without a substrate.

[0227] like Figure 40As shown, following step 9 (or step 8 depending on the situation), step 10, which involves single-piece processing using a cutting mechanism, is performed. Figure 41 The image shows an inductor component 1 formed by being monolithized through process 10.

[0228] Reference Figures 42 to 45 A modified example of the inductor component 1 of the second embodiment will be described.

[0229] like Figure 42 and Figure 43 As shown, in a first variation of the inductor component 1, a third insulating layer 2070, serving as an inorganic insulating layer, is also formed on the surface of the stacked second magnetic layer 2040. The periphery of the side of the vertical wiring 2020 intersecting the first direction Z is covered by the third insulating layer 2070. The third insulating layer 2070 can be formed of the same material as the first insulating layer 2050A and the second insulating layer 2050B described above, or it can be formed of a different material.

[0230] In this way, since the side of the vertical wiring 2020 is covered by the third insulating layer 2070, current leakage to the second magnetic layer 2040 and the like can be suppressed.

[0231] The surface 2070A of the third insulating layer 2070 is formed flush with the end face 2020A of the vertical wiring 2020, and the external terminal 2080 is formed to contact the surface 2070A of the third insulating layer 2070 and the end face 2020A of the vertical wiring 2020. The external terminal 2080, like the vertical wiring 2020, can be formed by electrolytic plating, sputtering, electroless plating, or the like.

[0232] The external terminal 2080 overlaps with the second magnetic layer 2040 when viewed from the vertical plane. In other words, when viewed from above, the external terminal 2080 extends further outward than the second magnetic layer 2040. Thus, by having an external terminal 2080 that connects to the vertical wiring 2020 and extends along the plane, and by forming the external terminal 2080 to overlap with the second magnetic layer 2040 when viewed from the vertical plane, the external terminal 2080 can be enlarged, resistance reduced, and fixing strength improved.

[0233] like Figure 44 As shown, in the second variation of inductor component 1, the substrate 2060 is not included. Since the substrate 2060 is not present, the inductor component 1 can be made thinner and lighter. Furthermore, a vertical wiring 2020 ( Figure 44Similar to the above-described variation 1, the vertical wiring 2020 connected to the pad portion 2010A of the inductor wiring 2010 is covered by a third insulating layer 2070, and an external terminal 2080 is formed on the end face 2020A of the vertical wiring 2020.

[0234] Another vertical cabling 2022 ( Figure 44 The vertical wiring on the right side of the inductor wiring 2010 is on the first magnetic layer 2030 side of the pad portion 2010B. Figure 44 The surface is connected to the lower side of the inductor. Another vertical wiring 2022 extends outward through the first magnetic layer 2030. Thus, in Modification 2, since a thin inductor component 1 is achieved and it can be connected to the external circuit from the top and bottom, the freedom of mounting position is increased.

[0235] like Figure 45 As shown, in a third variation of inductor component 1, a substrate 2060 is included. A vertical wiring 2020 ( Figure 45 The vertical wiring on the left side (as in the first and second variations) is covered by the third insulating layer 2070, and an external terminal 2080 is formed on the end face 2020A of the vertical wiring 2020.

[0236] Another vertical cabling 2022 ( Figure 45 The vertical wiring on the right side is similar to that in Modified Example 2, and is located on the first magnetic layer 2030 side of the pad portion 2010B of the inductor wiring 2010 ( Figure 45 The surface of the substrate 2060 is connected to the lower side of the substrate 2060. In the third variation, another vertical wiring 2022 penetrates the first magnetic layer 2030 and also penetrates the substrate 2060. Moreover, the end face 2022A of the other vertical wiring 2022 is configured to be flush with the surface of the substrate 2060 and exposed externally.

[0237] In the third variation, since the vertical wiring 2020 passes through the substrate 2060, which is an inorganic substrate, the degree of freedom of the mounting position is increased because it can be connected to the external circuit from the top and bottom, and the strength of the substrate can also be ensured by the presence of an inorganic substrate.

[0238] As in the second and third variations, by extending vertical wiring 2020 and 2022 on both sides of the inductor wiring 2010, it is possible to connect to the external circuit from the top and bottom, thus increasing the freedom of installation position.

[0239] like Figures 46-48As shown, in the fourth variation of inductor component 1, two inductor wirings 2110 are arranged along the same plane. Each inductor wiring 2110 is formed by connecting two regions extending parallel to the direction of one of the anisotropic axes (e.g., the X-axis direction) in uniaxial magnetic anisotropy, and then extending in a direction intersecting the direction of the anisotropic axis (e.g., the X-axis direction). The region extending in a direction intersecting the direction of one of the anisotropic axes (e.g., the X-axis direction) of the inductor wiring 2110 also extends in a direction that is not orthogonal to one of the anisotropic axes (e.g., the X-axis), similar to the first embodiment described above.

[0240] In the inductor component 1 of the fourth variation, the two ends of the inductor wiring 2110 are separately configured in the direction of one of the anisotropic axes (e.g., the X-axis direction) in the difficult axis and easy axis of the uniaxial magnetic anisotropy, and the inductor wiring 2110 extends in a direction that is not orthogonal to one of the anisotropic axes (e.g., the X-axis) throughout the entire region.

[0241] like Figure 48 As shown, a first insulating layer 2150A is stacked on a substrate 2160, and a first magnetic layer 2130 is stacked and disposed between the first insulating layers 2150A. Inductor wiring 2110 is formed on the first insulating layers 2150A, and a second insulating layer 2150B is stacked to cover the inductor wiring 2110. A second magnetic layer 2140 is further stacked to cover the second insulating layer 2150B. In this embodiment, no insulating layer is formed on the second magnetic layer 2140.

[0242] The cross-sectional dimensions of the inductor wiring 2110 can be 40 μm × 20 μm, the thickness of the substrate 2160 can be 5 μm, and the thicknesses of the first magnetic layer 2130 and the second magnetic layer 2140 can each be 5 to 6 μm. The thickness of the first insulating layer 2150A is obtained by adding approximately 2 to 10 μm to the thickness of the first magnetic layer 2130. The thickness of the second insulating layer 2150B is obtained by adding approximately 2 to 10 μm to the thickness of the inductor wiring 2110. Furthermore, the protrusion of the vertical wiring 2120 from the surface of the second magnetic layer 2140 can be 5 μm, and the dimensions of the inductor component 1 having a generally rectangular shape can be exemplified as L × W × T = 1.0 mm × 0.5 mm × 0.5 mm. However, these dimensions are merely examples and are not limited thereto.

[0243] In the fourth variation, the number of inductor wirings 2110 arranged along the same plane in one inductor component 1 is two, but it is not limited to this. Any number of inductor wirings 2110, more than three, can be arranged along the same plane. In this case, it is possible to illustrate the case where multiple inductor components 1 are arranged symmetrically with respect to a centerline extending along the long side direction (e.g., the X-axis direction) of the inductor component 1 having a rectangular planar shape.

[0244] In the fourth variation, since multiple inductor wirings 2110 are arranged along the same plane, an inductor array element can be formed. Therefore, space can be saved because the mounting spacing can be omitted.

[0245] like Figure 46 As shown, the diagram includes both regions where adjacent inductor wirings 2110 are arranged in parallel and regions where they are not. The non-parallel regions create areas where adjacent inductor wirings 2110 are close together and arranged in parallel, and areas where adjacent inductor wirings 2110 are separated and arranged in parallel. This configuration increases the coupling coefficient in areas where adjacent inductor wirings 2110 are close together and decreases the coupling coefficient in areas where adjacent inductor wirings 2110 are separated. By connecting the non-parallel regions to the parallel regions of adjacent inductor wirings 2110, various controllable aspects of the inductor coupling coefficient can be achieved.

[0246] like Figure 48 As shown, in the region where adjacent inductor wirings 2110 are close together, the second magnetic layer 2140 has an uneven shape covering the inductor wirings 2110 from three directions. Thus, when the inductor wirings 2110 are viewed along a cross-section along the first direction Z, the second magnetic layer 2140, having an uneven shape covering the inductor wirings 2110 in one direction of the first direction Z and two directions of the second direction Y, can, together with the first magnetic layer 2130, cover the entire circumference of the inductor wirings 2110, thereby improving the inductor acquisition efficiency. In other words, in Figure 48 In the inductor component 1, the second magnetic layer 2140 has a non-planar portion 2142 that is convex or concave relative to the first imaginary plane P1. This configuration reduces leakage flux and improves inductance efficiency. The first magnetic layer 2130 can also be configured to have a non-planar portion. The planar portion 2141 of the second magnetic layer 2140 contacts the non-planar portion 2142. The planar portion 2131 of the first magnetic layer 2130 is covered by a first insulating layer 2150A.

[0247] like Figure 46 and Figure 48As shown, when viewed along the first direction Z, the second magnetic layer 2140 is positioned further inward than the outer surface of the inductor component 1. Therefore, during monolithic fabrication, there is no concern about damage to the magnetic layer due to cutting. For example, if the magnetic layer is stretched due to mechanical stress during cutting, leakage occurs between the stacked magnetic layers, leading to increased iron loss; however, this situation can be avoided in this embodiment.

[0248] like Figure 47 As shown, the first magnetic layer 2130 and the second magnetic layer 2140 are not formed in the regions at both ends of the inductor wiring 2110 having pad portions 2110A and 2110B. Therefore, the vertical wiring 2120 connected to the pad portions 2110A and 2110B does not penetrate the magnetic layer. In this embodiment, the first magnetic layer 2130 and the second magnetic layer 2140 are disposed in the regions of the inductor wiring 2110 other than the two ends.

[0249] like Figure 49 and Figure 50 As shown, in a fifth modification of the inductor component 1, a third insulating layer 2170, serving as an inorganic insulating layer, is further formed on the surface of the stacked second magnetic layer 2140. For example... Figure 49 As shown, the sides of the vertical wiring 2120 are surrounded by a third insulating layer 2170. (As indicated...) Figure 50 As shown, the second magnetic layer 2140, which has a concave-convex shape with a non-planar portion 2142, is also covered by a third insulating layer 2170. Figure 49 Is with Figure 47 The corresponding sectional view, Figure 50 Is with Figure 48 The corresponding sectional view.

[0250] The surface 2170A of the third insulating layer 2170 is formed flush with the end face 2120A of the vertical wiring 2120, and the external terminal 2180 is formed to contact the surface 2170A of the third insulating layer 2170 and the end face 2120A of the vertical wiring 2120. The external terminal 2180, as described above, can be formed by electrolytic plating, sputtering, electroless plating, or the like.

[0251] In a fifth modification of the inductor component 1, since the first magnetic layer 2130 and the second magnetic layer 2140 are covered by the first insulating layer 2150A and the second insulating layer 2150B, the first magnetic layer 2130 and the second magnetic layer 2140 are protected from environmental loads (humidity, etc.). Because the surface of the third insulating layer 2170, which forms the outermost surface of the inductor component 1 and covers the second magnetic layer 2140, is formed to be flatter than the uneven shape of the second magnetic layer 2140, coplanarity during installation is improved. Coplanarity refers to the property or state of multiple points existing along the same plane. It is also sometimes referred to as "surface uniformity" or "terminal flatness."

[0252] like Figure 51 As shown, in a sixth variation of the inductor component 1, the inductor wiring 2110 includes multiple layers arranged along a first direction Z. Figure 51 In the inductor component 1, two layers are formed in the first direction Z, each consisting of two inductor wirings 2110 arranged along the same plane. That is, in cross-sectional view, the inductor wirings 2110 are arranged in a 2×2 matrix. This configuration extends the inductor's line length and increases the design flexibility. An insulating material (second insulating layer 2150B) is filled between the layers of the inductor wirings 2110. However, this is not a limitation; an inductor component 1 can be configured with a matrix of any number of inductor wirings 2110 arranged in any number of layers along the same plane. This increases the flexibility of the inductor wirings 2110 when the inductor wirings 2110 extending along the plane are composed of multiple layers and insulating resin is filled between the layers. Furthermore, by filling the spaces between the inductor wirings 2110 with insulating resin, current leakage can be suppressed, and the inductor wirings 2110 can be brought closer together, thus enabling a thinner inductor component 1.

[0253] This disclosure allows for the appropriate combination of the various embodiments and modifications described above. The combination of embodiments and / or modifications also includes combinations of structures included in the embodiments and / or the examples.

[0254] This disclosure is fully described with reference to the accompanying drawings and through the foregoing embodiments and / or modifications, but the foregoing embodiments and / or modifications do not encompass all of this disclosure. Various modifications and alterations can be made by those skilled in the art. Such modifications and alterations, as long as they do not depart from the scope of this disclosure, should be understood to be included within this disclosure.

[0255] Explanation of reference numerals in the attached figures

[0256] 1…Inductor component; 2…Bulkhead; 201…First main surface; 202…Second main surface; 203…Recess; 210, 220, 230, 240…Insulating layers; 3…Core; 4…Substrate; 10…Inductor element; 20…Magnetic layer; 21…Inorganic insulating layer; 22…Inorganic magnetic layer; 23, 24…Through hole; 25…First end; 26…Planar portion; 30…First inductor wiring; 31…Part; 40…Second inductor wiring; 50… 51…Second end; 60…Second conductive portion; 61…Vertical wiring; 70…External terminal; 71…First external terminal; 711, 712, 713, 714…Terminals; 72…Second external terminal; 721, 722…Terminals; 73…Recess; 81, 82…Pad portion; 811, 821…Part; 90…Terminal; 501, 601…Conducting opening; 1000…Substrate; 1001…First laminate; 1002… Second layer stack; 1003… Third layer stack; 1004… Fourth layer stack; 1005… Fifth layer stack; 1006… Sixth layer stack; 2010, 2110… Inductor wiring; 2010A, 2010B, 2110A, 2110B… Pads; 2020, 2022, 2120… Vertical wiring; 2020A, 2022A, 2120A… End face; 2030, 2130… First magnetic layer; 2031, 21… 31…planar portion; 2040, 2140…second magnetic layer; 2041, 2141…planar portion; 2142…non-planar portion; 2050A, 2150A…first insulating layer; 2050B, 2150B…second insulating layer; 2051B…surface; 2060, 2160…substrate; 2061…surface; 2070, 2170…third insulating layer; 2070A, 2170A…surface; 2080, 2180…external terminals.

Claims

1. An inductor element comprising: A magnetic layer, disposed along a first imaginary plane, has uniaxial magnetic anisotropy; and The inductor wiring is positioned at a distance from the first imaginary plane in a first direction intersecting the first imaginary plane, and is arranged along a second imaginary plane parallel to the first imaginary plane. The roughness of the planar portion of the magnetic layer located on the first imaginary plane is 3 nm or more and 10 nm or less.

2. The inductor element according to claim 1, wherein, The aforementioned planar portion has the same roughness throughout the entire surface.

3. The inductor element according to claim 1 or 2, wherein, The portion of the inductor wiring located on the second imaginary plane has a roughness greater than that of the planar portion.

4. The inductor element according to any one of claims 1 to 3, wherein, The device comprises a blank, with the aforementioned magnetic layer and inductor wiring located inside the blank. The aforementioned blank includes an insulating layer that is in direct contact with the aforementioned planar portion. The CTE of the above-mentioned insulation layer is above 2 ppm / ℃ and below 60 ppm / ℃.

5. The inductor element according to any one of claims 1 to 3, wherein, The device comprises a blank, with the aforementioned magnetic layer and inductor wiring located inside the blank. The aforementioned blank includes an insulating layer that is in direct contact with the aforementioned planar portion. The CTE of the above-mentioned insulation layer is above 2 ppm / ℃ and below 35 ppm / ℃.

6. The inductor element according to any one of claims 1 to 5, wherein, The device comprises a blank, with the aforementioned magnetic layer and inductor wiring located inside the blank. The aforementioned blank contains an inorganic material substrate.

7. The inductor element according to claim 6, wherein, The inorganic material substrate described above has a smaller roughness than the planar portion described above.

8. An inductor component comprising: The inductor element according to any one of claims 1 to 7; and External terminals are electrically connected to the wiring of the aforementioned inductor.

9. The inductor component according to claim 8, wherein, The aforementioned inductor wiring is the first inductor wiring located on one side of the aforementioned magnetic layer in the first direction. The aforementioned inductor element includes: The second inductor wiring is located on the other side of the magnetic layer in the first direction; as well as The conductive section electrically connects the wiring of the first inductor and the wiring of the second inductor. The aforementioned first inductor wiring, the aforementioned second inductor wiring, and the aforementioned conductive portion constitute at least a portion of an inductor that rotates about a rotation axis, the aforementioned rotation axis extending along a second direction intersecting the aforementioned first direction.

10. The inductor component according to claim 9, wherein, The absolute value of the angle between the difficult or easy axis of the aforementioned magnetic layer and the aforementioned rotation axis is greater than zero degrees and less than 10 degrees.

11. The inductor component according to claim 9 or 10, wherein, The magnetic layer has a first end facing the conductive portion in a third direction, and the third direction intersects the first direction and the second direction. The aforementioned conductive portion has a second end facing the aforementioned magnetic layer in the aforementioned third direction. The first end and the second end are inclined in the same direction relative to the first direction.

12. An inductor component comprising: The inductor element as described in claim 6 or 7; The pad portion is located at the end of the aforementioned inductor wiring; and Vertical wiring connects the aforementioned pads and external terminals.

13. The inductor component according to claim 12, wherein, have: As the first magnetic layer of the aforementioned magnetic layer; and The second magnetic layer is disposed along the third imaginary plane. In the first direction, the second imaginary plane is located between the third imaginary plane and the first imaginary plane, and the third imaginary plane is parallel to the first imaginary plane and the second imaginary plane.

14. The inductor component according to claim 12 or 13, wherein, The aforementioned inductor wiring comprises multiple layers arranged along the aforementioned first direction.

15. The inductor component according to claim 13 or 14, wherein, Either the first magnetic layer or the second magnetic layer has a non-planar portion that is convex or concave relative to the first imaginary plane or the second imaginary plane.

16. The inductor component according to any one of claims 13 to 15, wherein, The roughness of the planar portion of the first magnetic layer is different from the roughness of the planar portion of the second magnetic layer located on the third imaginary plane.

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