Epitaxial layer and growth control method thereof
By acquiring real-time reflective high-energy electron diffraction images of gallium oxide films, the growth mode of gallium oxide films can be automatically determined, solving the problem of errors that are prone to occur in manual judgment and realizing accurate single-atom layer growth of gallium oxide films.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- HANGZHOU GAREN SEMICON CO LTD
- Filing Date
- 2026-03-16
- Publication Date
- 2026-06-09
AI Technical Summary
Existing technologies rely on manual judgment during gallium oxide layer growth, which is prone to errors, and the integrated light intensity signal is easily interfered with, leading to inaccurate determination of the growth endpoint.
By acquiring real-time reflective high-energy electron diffraction images of gallium oxide films, the relationship between reflective high-energy electron diffraction intensity and growth time is determined, and compared with a standard relationship to automatically determine whether the growth mode of gallium oxide films is a single-atom layer.
This technology enables accurate determination of whether gallium oxide films are grown as single atomic layers without relying on human experience, reducing errors and ensuring growth quality.
Smart Images
Figure CN122169212A_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of materials growth, and in particular to an epitaxial layer and a method for controlling its growth. Background Technology
[0002] High-quality, atomically flat gallium oxide (Ga2O3) layers are the core foundation for obtaining high-performance semiconductor devices. In particular, for precision structures such as ultrathin quantum wells and heterojunctions, the growth of gallium oxide layers must reach the precision of a single atomic layer (or a single cell layer).
[0003] Currently, during the growth of gallium oxide layers, in the initial stage, the operator selects a high-intensity, high-contrast diffraction spot from a Reflection High Energy Electron Diffraction (RHEED) image. Then, an image acquisition device records the integrated light intensity of the selected area in real time and plots it as a curve of integrated light intensity versus time. This curve is used to determine the start and end of layer growth. Under ideal single-atom-layer growth conditions, the curve of integrated light intensity versus time exhibits periodic oscillations. Each oscillation cycle corresponds to the completion of a single-atom-layer deposition: the intensity decreases from its maximum value (when the atomic layer coverage is minimal and the surface is smoothest) to its minimum value (when the atomic layer coverage is approximately 50%, and the surface is roughest), and then returns to its maximum value (when the layer coverage is complete and the surface returns to smooth).
[0004] The current method has the following drawbacks: First, it relies on manual labor, and human judgment and selection are prone to errors, which may result in the failure to achieve atomic layer growth; Second, the integrated light intensity signal is easily affected by factors such as sample drift and surface contamination, which can cause the oscillation signal to decay or become distorted, making it impossible for operators to accurately determine the growth endpoint.
[0005] Therefore, how to solve the above-mentioned technical problems should be a key focus for those skilled in the art. Summary of the Invention
[0006] The purpose of this application is to provide an epitaxial layer and its growth control method, which does not rely on manual methods to determine whether the gallium oxide film is grown as a single atomic layer, so as to obtain a gallium oxide film grown as a single atomic layer.
[0007] To address the aforementioned technical problems, this application provides a method for controlling the growth of an epitaxial layer, comprising: A gallium oxide film is grown on the surface of a substrate, and a reflective high-energy electron diffraction image of the gallium oxide film is acquired in real time. The intensity of the high-energy electron diffraction (HEED) is determined based on the high-energy electron diffraction image, and the relationship between the intensity of the HEED and the growth time of the gallium oxide film is determined. The growth mode of the gallium oxide film is determined by comparing the relationship described above with the standard relationship between the intensity of reflective high-energy electron diffraction and the growth time during gallium oxide monolayer growth.
[0008] Optionally, before growing a gallium oxide film on the surface of the substrate, the method further includes: Clean the substrate.
[0009] Optionally, cleaning the substrate includes: The substrate is pre-cleaned to obtain a pre-cleaned substrate; The pre-cleaned substrate is transferred to a buffer chamber for baking to obtain a baked substrate. The baked substrate is transferred to the film growth chamber and then subjected to irradiation cleaning.
[0010] Optionally, pre-cleaning the substrate includes: The substrate was cleaned using a heated acetone solution; The substrate was cleaned using anhydrous ethanol solution; The substrate was immersed in hydrochloric acid solution; The substrate was rinsed with deionized water. The substrate was soaked in a mixture of phosphoric acid and sulfuric acid; The substrate was rinsed with deionized water. The substrate was immersed in a buffered oxide etching solution; The substrate was rinsed with deionized water.
[0011] Optionally, before transferring the baked substrate into the film growth chamber, the method further includes: The buffer chamber is cleaned using oxygen.
[0012] Optionally, transferring the pre-cleaned substrate to a buffer chamber for baking includes: The pre-cleaned substrate is transferred to a buffer chamber and baked at 150°C to 200°C for 2 to 3 hours.
[0013] Optionally, irradiation cleaning of the baked substrate includes: The temperature is raised to 800℃~850℃, and the surface of the baked substrate is irradiated by a gallium metal source and an indium metal source.
[0014] Optionally, when the growth mode of the gallium oxide film is determined to be single-atom layer growth, the method further includes: Gallium oxide films are repeatedly grown on the surface of the gallium oxide film.
[0015] Optionally, after repeatedly growing a gallium oxide film on the surface of the gallium oxide film, the method further includes: The growth quality of the gallium oxide film is determined by comparing the pattern in the reflected high-energy electron diffraction image with the standard pattern of gallium oxide in the reflected high-energy electron diffraction image.
[0016] This application also provides an epitaxial layer, which is grown using any of the epitaxial layer growth control methods described above.
[0017] The epitaxial layer growth control method provided in this application grows a gallium oxide film on a substrate and acquires a reflective high-energy electron diffraction (HEED) image of the gallium oxide film. Then, it determines the reflective HEED intensity based on the HEED image and the relationship between the reflective HEED intensity and growth time. This relationship is then compared with a standard relationship between reflective HEED intensity and growth time for gallium oxide monolayer growth. This method determines whether the gallium oxide film grown on the substrate follows a monolayer growth pattern without relying on manual experience, accurately identifying whether the gallium oxide film has grown as a monolayer. Because the method in this application does not rely on manual intervention, it allows for easier judgment and is less prone to errors.
[0018] In addition, this application also provides a gallium oxide film. Attached Figure Description
[0019] To more clearly illustrate the technical solutions of the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0020] Figure 1 A flowchart of an epitaxial layer growth control method provided in the embodiments of this application Figure 1 ; Figure 2 A graph showing the intensity of reflective high-energy electron diffraction versus growth time during the growth of a gallium oxide monolayer, provided as an embodiment of this application. Figure 3 A flowchart of an epitaxial layer growth control method provided in the embodiments of this application Figure 2 ; Figure 4 These are atomic force microscope comparison images of gallium oxide films obtained in the embodiments of this application and gallium oxide films obtained in the prior art; Figure 5 These are reflection high-energy electron diffraction images of materials with different crystal systems. Detailed Implementation
[0021] To enable those skilled in the art to better understand the present application, the present application will be further described in detail below with reference to the accompanying drawings and specific embodiments. Obviously, the described embodiments are merely some embodiments of the present application, and not all embodiments. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.
[0022] Many specific details are set forth in the following description in order to provide a full understanding of the invention. However, the invention may also be practiced in other ways different from those described herein, and those skilled in the art can make similar extensions without departing from the spirit of the invention. Therefore, the invention is not limited to the specific embodiments disclosed below.
[0023] As described in the background section, currently, in the growth of gallium oxide films, determining whether the gallium oxide film is grown in the manner of a single atomic layer is highly dependent on manual intervention, which affects the determination of the growth pattern and the growth endpoint of the gallium oxide film.
[0024] In view of this, this application provides a method for controlling the growth of epitaxial layers, please refer to... Figure 1 The method may include: Step S101: Grow a gallium oxide film on the surface of the substrate and acquire a reflective high-energy electron diffraction image of the gallium oxide film in real time.
[0025] Gallium oxide films can be grown using methods such as molecular beam epitaxy (MBE).
[0026] Reflection high-energy electron diffraction images contain a wealth of information, such as spot or stripe patterns, pattern width, intensity distribution, etc.
[0027] Step S102: Determine the intensity of the high-energy electron diffraction based on the high-energy electron diffraction image, and determine the relationship between the intensity of the high-energy electron diffraction and the growth time of the gallium oxide film.
[0028] The process of determining the intensity of high-energy electron diffraction based on a high-energy electron diffraction image is well known to those skilled in the art and will not be described in detail here.
[0029] The relationship between the intensity of reflective high-energy electron diffraction and the growth time of gallium oxide film can be represented by a curve.
[0030] Step S103: Compare the relationship with the standard relationship between the intensity of reflective high-energy electron diffraction and the growth time during gallium oxide single-atom layer growth to determine the growth mode of the gallium oxide film.
[0031] The standard relationship between the intensity of reflective high-energy electron diffraction and growth time during gallium oxide single-atom layer growth can be represented by a curve, such as... Figure 2 As shown, the characteristics of the relationship between the intensity of high-energy electron diffraction (HEED) and growth time during gallium oxide single-atom layer growth include: the first stage is the decrease in HEED intensity, during which two slopes appear, indicating the deposition of two atomic layers. The first decrease in HEED intensity corresponds to the deposition of the first atomic layer, and the second decrease corresponds to the deposition of the second atomic layer. The second stage is a plateau period, characterized by a slight enrichment of gallium atoms. The first and second stages represent the adsorption process. The third stage is the increase in HEED intensity, which is the desorption process of the two atomic layers. Enrichment of gallium atoms is essential to prevent the epitaxial layer from decomposing and becoming rough.
[0032] When the relationship between the intensity of reflective high-energy electron diffraction and the growth time of the gallium oxide film matches the standard relationship, it indicates that the gallium oxide film is grown as a single atomic layer; when the relationship between the intensity of reflective high-energy electron diffraction and the growth time of the gallium oxide film does not match the standard relationship, it indicates that the gallium oxide film is not grown as a single atomic layer.
[0033] When the growth mode of the gallium oxide film is determined to be single-atom-layer growth, the current growth on the surface meets the expected requirements. When the growth mode of the gallium oxide film is determined to be non-single-atom-layer growth, the growth conditions can be adjusted to re-grow the gallium oxide film, and the growth mode of the gallium oxide film can be determined again to be single-atom-layer growth.
[0034] The epitaxial layer growth control method provided in this embodiment grows a gallium oxide film on a substrate and acquires a reflective high-energy electron diffraction (HEED) image of the gallium oxide film. Then, it determines the reflective HEED intensity based on the HEED image and the relationship between the reflective HEED intensity and growth time. This relationship is then compared with a standard relationship between reflective HEED intensity and growth time for gallium oxide monolayer growth. This allows for the determination of whether the gallium oxide film grown on the substrate follows a monolayer growth pattern, eliminating the need for manual judgment and accurately identifying whether the gallium oxide film has grown as a monolayer. Because the method in this embodiment does not rely on manual intervention, it facilitates easier judgment and reduces the likelihood of errors.
[0035] Based on the above embodiments, in one embodiment of this application, before growing a gallium oxide film layer on the surface of the substrate, the following may be included: Clean the substrate.
[0036] It should be noted that this application does not limit the specific cleaning process, as long as the substrate can be cleaned.
[0037] Cleaning can remove dirt and impurities from the substrate surface, preventing them from affecting the growth of the gallium oxide film and improving the growth quality of the gallium oxide film.
[0038] Please refer to Figure 3 Based on the above embodiments, in one embodiment of this application, the epitaxial layer growth control method may include: Step S201: Pre-clean the substrate to obtain a pre-cleaned substrate.
[0039] The purpose of pre-cleaning is to remove organic contaminants, metal ions, inorganic contaminants, and the oxide layer formed by natural oxidation on the substrate surface.
[0040] Pre-cleaning is non-in-situ cleaning, meaning the cleaning process is not carried out in the film growth chamber.
[0041] It should be noted that this application does not limit the pre-cleaning process, as long as the above-mentioned pre-cleaning purpose can be achieved.
[0042] As one possible implementation, pre-cleaning the substrate includes: Step S2011: Clean the substrate using a heated acetone solution.
[0043] The acetone solution can be heated to 80℃~90℃ using a water bath for 10 minutes. The acetone solution is replaced once during the water bath process, meaning the substrate is cleaned twice with acetone to improve its cleanliness.
[0044] Step S2012: Clean the substrate using anhydrous ethanol solution.
[0045] The cleaning time for the substrate with anhydrous ethanol can be 8 to 10 minutes. Cleaning the substrate with anhydrous ethanol and acetone solutions can remove organic contaminants from the substrate.
[0046] Step S2013: Immerse the substrate in hydrochloric acid solution.
[0047] The substrate can be immersed in hydrochloric acid solution for 8 to 10 minutes to remove metal ions from the substrate surface.
[0048] Step S2014: Rinse the substrate with deionized water.
[0049] The substrate can be rinsed with deionized water for 10 to 15 minutes to remove the cleaning solution adhering to the substrate surface.
[0050] Step S2015: Soak the substrate in a mixture of phosphoric acid and sulfuric acid.
[0051] The mass fraction of phosphoric acid can be 75% to 85%, and the mass fraction of sulfuric acid can be 90% to 98%.
[0052] The temperature of the mixture can be 80℃~90℃, and the soaking time can be 3 minutes~5 minutes to remove inorganic residues on the substrate.
[0053] Step S2016: Rinse the substrate with deionized water.
[0054] The substrate can be rinsed with deionized water for 5 to 8 minutes to remove the mixture adhering to the substrate surface.
[0055] Step S2017: Immerse the substrate in a buffer oxide etching solution.
[0056] Immersing the substrate in a buffered oxide etchant (BOE) is to remove the oxide layer that naturally forms on the substrate surface, creating a hydrogen-terminated surface and preventing re-oxidation.
[0057] The substrate can be immersed in the buffer oxide etching solution for 10 to 15 minutes.
[0058] Step S2018: Rinse the substrate with deionized water.
[0059] The substrate can be rinsed with deionized water for 8 to 10 minutes to remove the buffer oxide etching solution adhering to the substrate surface.
[0060] Step S202: Transfer the pre-cleaned substrate to the buffer chamber for baking to obtain the baked substrate.
[0061] Baking the pre-cleaned substrate can desorb moisture and light organic matter on the substrate, preventing contaminants from being introduced into the film growth chamber.
[0062] This application does not specify the baking time and temperature; it depends on the specific circumstances.
[0063] As one possible implementation, transferring the pre-cleaned substrate to a buffer chamber for baking includes: transferring the pre-cleaned substrate to a buffer chamber and baking it at a temperature of 150°C to 200°C for 2 to 3 hours.
[0064] Baking at 150℃~200℃ for 2 to 3 hours can ensure the baking effect while avoiding excessive baking time.
[0065] In one embodiment of this application, before transferring the baked substrate into the film growth chamber, the process may further include: cleaning the buffer chamber with oxygen.
[0066] Oxygen cleaning of the buffer chamber involves multiple oxygen pumping and filling processes within the buffer chamber. As oxygen leaves the buffer chamber, contaminants are carried away, preventing contamination of the substrate after baking.
[0067] Oxygen cleaning of the buffer chamber can be performed during the baking of the substrate.
[0068] Step S203: Transfer the baked substrate to the film growth chamber and perform irradiation cleaning on the baked substrate.
[0069] Irradiation cleaning is performed in the film growth chamber and can be called in-situ cleaning. The purpose of irradiation cleaning is to remove stubborn contaminants such as carbon and sulfur from the substrate.
[0070] It should be noted that this application does not limit the irradiation cleaning process; it depends on the specific circumstances.
[0071] As one possible implementation, irradiation cleaning of the baked substrate includes: heating to 800°C~850°C and irradiating the surface of the baked substrate with a gallium metal source and an indium metal source.
[0072] At a high temperature of 800℃~850℃, gallium (Ga) metal sources and indium (In) metal sources irradiate the surface of the substrate with gallium metal beams and indium metal beams, removing stubborn contaminants such as carbon and sulfur from the outermost layer of the substrate by forming volatile oxides or by direct physical sputtering.
[0073] From step S201 to S203, the three-step cleaning process is progressive, achieving thorough removal of macroscopic contaminants and microscopic adsorbates, ultimately obtaining an atomically clean substrate surface with a defined stoichiometric ratio, which prepares the substrate surface for growing a high-quality gallium oxide film.
[0074] Step S204: Grow a gallium oxide film on the surface of the substrate and acquire a reflective high-energy electron diffraction image of the gallium oxide film in real time.
[0075] Step S205: Determine the intensity of the high-energy electron diffraction based on the high-energy electron diffraction image, and determine the relationship between the intensity of the high-energy electron diffraction and the growth time of the gallium oxide film.
[0076] Step S206: Compare the relationship with the standard relationship between the intensity of reflective high-energy electron diffraction and the growth time during gallium oxide single-atom layer growth to determine the growth mode of the gallium oxide film.
[0077] The contents of steps S204 to S206 can be referred to the above embodiments, and will not be described in detail here.
[0078] Based on any of the above embodiments, in one embodiment of this application, when the growth mode of the gallium oxide film is determined to be single-atom layer growth, it may further include: repeatedly growing the gallium oxide film on the surface of the gallium oxide film.
[0079] When the growth mode of the gallium oxide film is determined to be atomic layer growth, it indicates that the current growth conditions (such as temperature, pressure, beam current, etc.) are met and no adjustment is needed. You can continue to grow other gallium oxide films under the current growth conditions.
[0080] The cycle of repeated growth of gallium oxide film is not limited in this application and depends on the specific circumstances.
[0081] By repeating multiple growth cycles, gallium oxide films with a step flow morphology and grown atomically can be obtained.
[0082] Atomic force microscopy comparison images of the gallium oxide film obtained in this application and the gallium oxide film obtained in the prior art are shown below. Figure 4 As shown, Figure 4 Image (a) is a scanning electron microscope (SEM) image of a gallium oxide film obtained in the prior art, and image (b) is a scanning electron microscope (SEM) image of a gallium oxide film obtained in this application. Figure 4 It is known that the gallium oxide film grown in this application has a stepped flow morphology.
[0083] In one embodiment of this application, after repeatedly growing a gallium oxide film on the surface of the gallium oxide film, the method further includes: The growth quality of the gallium oxide film was determined by comparing the pattern in the reflection high-energy electron diffraction (HED) image with the standard pattern of gallium oxide in the HED image.
[0084] The final quality of a gallium oxide film can be determined by comparing the pattern in a high-energy reflection electron diffraction (HEED) image with a standard pattern. For example, a high degree of consistency between the pattern in the HEED image and the standard pattern indicates a good final quality of the gallium oxide film; conversely, a low degree of consistency indicates a poor final quality.
[0085] Gallium oxide has a monoclinic crystal structure, which is fundamentally different from the cubic or hexagonal structures of common semiconductor materials (such as Si, GaAs, GaN, SiC, etc.).
[0086] The characteristics of cubic crystal systems (such as Si and GaAs) are: high symmetry. When incident along directions such as
[110] , the pattern often exhibits obvious mirror symmetry or 90-degree rotational symmetry. The stripes are arranged regularly and symmetrically.
[0087] Hexagonal crystal systems (such as GaN and SiC) are characterized by sixfold rotational symmetry. When growing along the
[0001] direction (c-plane), rotating the sample results in the pattern repeating every 60 degrees. The variations in fringe spacing and intensity exhibit sixfold symmetry.
[0088] The characteristics of the monoclinic crystal system are: low symmetry, asymmetrical pattern, and weak brightness. The pattern varies significantly when incident along different crystal orientations, and there is no higher-order rotational symmetry of 90 degrees or 60 degrees.
[0089] Due to the low symmetry and unique surface reconstruction resulting from its monoclinic crystal structure, the patterns in high-energy reflection electron diffraction (HEED) images of gallium oxide (β-Ga₂O₃) are indeed characteristic enough to distinguish it from mainstream cubic and hexagonal semiconductor materials. The patterns in HEED images of materials with different crystal systems are as follows: Figure 5 As shown.
[0090] The epitaxial layer growth control method of this application is described below using a specific case.
[0091] Step 1: Perform non-in-situ cleaning on the gallium oxide substrate to obtain a pre-cleaned substrate.
[0092] (1) Heat the acetone solution in a water bath to 90 degrees and immerse the gallium oxide substrate in the heated acetone solution for 10 minutes. Replace the acetone solution with fresh acetone solution in between and clean twice. (2) Clean the gallium oxide substrate with anhydrous ethanol for 10 minutes; (3) Immerse the gallium oxide substrate in hydrochloric acid solution for 8 minutes; (4) Rinse the gallium oxide substrate with deionized water for 10 minutes; (5) Immerse the gallium oxide substrate in a mixed acid (phosphoric acid (85%, mass fraction) and sulfuric acid (98%, mass fraction)) at a temperature of 90°C for three minutes; (6) Rinse the gallium oxide substrate with deionized water for 5 minutes; (7) Immerse the gallium oxide substrate in BOE solution for 10 minutes; (8) Rinse the gallium oxide substrate with deionized water for 8 minutes.
[0093] Step 2: Bake the pre-cleaned substrate in the buffer chamber at 150°C for 2 hours. During this period, the buffer chamber is repeatedly evacuated and purged to clean it.
[0094] Step 3: In-situ cleaning of the gallium oxide substrate in the film growth chamber: After heating to 800℃, the surface of the gallium oxide substrate is irradiated with Ga metal source and In metal source to further remove surface contaminants.
[0095] Step 4: Grow a gallium oxide film on the surface of the gallium oxide substrate and acquire a reflective high-energy electron diffraction image of the gallium oxide film in real time.
[0096] Step 5: Determine the intensity of the high-energy electron diffraction based on the high-energy electron diffraction image, and determine the relationship between the intensity of the high-energy electron diffraction and the growth time of the gallium oxide film.
[0097] Step 6: Compare the relationship with the standard relationship between the intensity of reflective high-energy electron diffraction and the growth time during gallium oxide single-atom layer growth to determine the growth mode of the gallium oxide film.
[0098] Step 7: When the growth mode of the gallium oxide film is single-atom-layer growth, repeating multiple cycles of growth can obtain a gallium oxide thin film with a step flow morphology and grown one atom-layer at a time.
[0099] Step 8: Epitaxial growth is complete. Compare the pattern in the reflection high-energy electron diffraction image with the standard pattern to determine the final quality of the gallium oxide film.
[0100] In this embodiment, through the three-step cleaning process from step 1 to step 3, the monitoring of single-atom-layer growth of gallium oxide film, and the monitoring of surface quality, precise monitoring of the entire chain from the clean substrate starting surface to atomic-level controllable growth and then to active surface stabilization is achieved. Together, these ensure the controllable preparation of high-quality, high-flatness, and low-defect gallium oxide film, so as to obtain gallium oxide film with step flow morphology and grown atomically layer by atomic layer.
[0101] The method described in this application can be applied to the manufacture of gallium oxide chips. Through atomic-level precision control, it can ensure top-notch chip performance and stable quality, thereby enabling gallium oxide chips to be used in the manufacture of high-voltage energy-saving power electronic devices (such as charging piles and power grid equipment) and high-sensitivity ultraviolet detectors.
[0102] This application also provides an epitaxial layer, which is grown using the epitaxial layer growth control method described in any of the above embodiments.
[0103] The various embodiments in this specification are described in a progressive manner. Each embodiment focuses on the differences from other embodiments. The same or similar parts between the various embodiments can be referred to each other.
[0104] The epitaxial layer and its growth control method provided in this application have been described in detail above. Specific examples have been used to illustrate the principles and implementation methods of this application. The descriptions of the embodiments above are only for the purpose of helping to understand the solution and core ideas of this application. It should be noted that those skilled in the art can make several improvements and modifications to this application without departing from the principles of this application, and these improvements and modifications also fall within the protection scope of this application.
Claims
1. A method for controlling the growth of an epitaxial layer, characterized in that, include: A gallium oxide film is grown on the surface of a substrate, and a reflective high-energy electron diffraction image of the gallium oxide film is acquired in real time. The intensity of the high-energy electron diffraction (HEED) is determined based on the high-energy electron diffraction image, and the relationship between the intensity of the HEED and the growth time of the gallium oxide film is determined. The growth mode of the gallium oxide film is determined by comparing the relationship described above with the standard relationship between the intensity of reflective high-energy electron diffraction and the growth time during gallium oxide monolayer growth.
2. The epitaxial layer growth control method as described in claim 1, characterized in that, Before growing a gallium oxide film on the surface of the substrate, the process also includes: Clean the substrate.
3. The epitaxial layer growth control method as described in claim 2, characterized in that, Cleaning the substrate includes: The substrate is pre-cleaned to obtain a pre-cleaned substrate; The pre-cleaned substrate is transferred to a buffer chamber for baking to obtain a baked substrate. The baked substrate is transferred to the film growth chamber and then subjected to irradiation cleaning.
4. The epitaxial layer growth control method as described in claim 3, characterized in that, Pre-cleaning the substrate includes: The substrate was cleaned using a heated acetone solution; The substrate was cleaned using anhydrous ethanol solution; The substrate was immersed in hydrochloric acid solution; The substrate was rinsed with deionized water. The substrate was soaked in a mixture of phosphoric acid and sulfuric acid; The substrate was rinsed with deionized water. The substrate was immersed in a buffered oxide etching solution; The substrate was rinsed with deionized water.
5. The epitaxial layer growth control method as described in claim 3, characterized in that, Before transferring the baked substrate into the film growth chamber, the process further includes: The buffer chamber is cleaned using oxygen.
6. The epitaxial layer growth control method as described in claim 3, characterized in that, Transferring the pre-cleaned substrate to a buffer chamber for baking includes: The pre-cleaned substrate is transferred to a buffer chamber and baked at 150°C to 200°C for 2 to 3 hours.
7. The epitaxial layer growth control method as described in claim 4, characterized in that, The irradiation cleaning of the baked substrate includes: The temperature is raised to 800℃~850℃, and the surface of the baked substrate is irradiated by a gallium metal source and an indium metal source.
8. The epitaxial layer growth control method as described in claim 1, characterized in that, When the growth mode of the gallium oxide film is determined to be single-atom layer growth, the method further includes: Gallium oxide films are repeatedly grown on the surface of the gallium oxide film.
9. The epitaxial layer growth control method as described in claim 8, characterized in that, After repeatedly growing gallium oxide films on the surface of the gallium oxide film, the process further includes: The growth quality of the gallium oxide film is determined by comparing the pattern in the reflected high-energy electron diffraction image with the standard pattern of gallium oxide in the reflected high-energy electron diffraction image.
10. An epitaxial layer, characterized in that, The epitaxial layer is grown using the epitaxial layer growth control method as described in any one of claims 1 to 9.