Semiconductor manufacturing apparatus

Abstract

A semiconductor manufacturing apparatus according to an embodiment includes: a chamber; a susceptor capable of placing a wafer; a rotary body that rotates the susceptor around a prescribed central axis; a first radiation thermometer disposed above the chamber that measures a temperature of a first temperature measurement position of the wafer; a second radiation thermometer disposed above the chamber adjacent to the first radiation thermometer that measures a temperature of a second temperature measurement position of the wafer; a first heater that heats a central region of the wafer and a second heater that heats an outer region of the wafer; and a control section that controls power applied to the first heater and the second heater. A second distance from the central axis to the second temperature measurement position is longer than a first distance from the central axis to the first temperature measurement position and shorter than 0.8 times a radius of the wafer.

Description

Technical Field

[0001] Embodiments of the present invention relate to a semiconductor manufacturing apparatus. Background Technology

[0002] In semiconductor manufacturing equipment, properly monitoring the temperature of the semiconductor substrate (hereinafter also referred to as "wafer") and controlling the temperature through heating systems such as heaters is an important technology for stable operation of the equipment and obtaining high-quality wafers. For example, in a reactor consisting of multiple heaters, such as a CVD (Chemical Vapor Deposition) apparatus, high-quality wafers can be provided by adjusting the output balance of each heater. However, in conventional semiconductor manufacturing equipment that measures the temperature of the wafer and adjusts the output of the heaters to a specified wafer temperature, the output balance of each heater varies depending on the location of the wafer temperature measurement, making it impossible to properly manage the lifespan of the heaters.

[0003] For example, Patent Document 1 (Japanese Patent Application Publication No. 2019-106462) discloses a temperature measurement method in which, when measuring the temperature of the outer periphery of a wafer, the reading speed is adjusted according to the wafer's rotation speed to avoid interference caused by an oriented plane (hereinafter also referred to as "orientation plane") present on wafers smaller than 6 inches. However, Patent Document 1 does not mention the temperature measurement location at the outer periphery.

[0004] Furthermore, for example, in Patent Document 2 (Japanese Patent Application Publication No. 2006-303289), a temperature measurement method using the arithmetic mean of the wafer temperature based on two measurement units is disclosed as a countermeasure when the positional relationship between the wafer and the base shifts. However, Patent Document 2 does not mention the relationship between the temperature measurement position and the heating system such as a heater. Summary of the Invention

[0005] The present invention was made in view of this. That is, the object of the present invention is to provide a semiconductor manufacturing apparatus capable of controlling the temperature measurement position of the wafer and appropriately managing the power applied to the heater.

[0006] According to a first aspect of the present invention, a semiconductor manufacturing apparatus includes: a chamber; a base disposed within the chamber and capable of mounting a wafer on its upper surface; a rotating body disposed within the chamber, causing the base to rotate about a predetermined central axis; a first radiation thermometer disposed above the chamber for measuring the temperature at a first temperature measuring position of the wafer mounted on the base; a second radiation thermometer disposed adjacent to the first radiation thermometer above the chamber for measuring the temperature at a second temperature measuring position of the wafer mounted on the base; a first heater and a second heater disposed below the base, the first heater heating a central region of the wafer and the second heater heating an outer region of the wafer; and a control unit that, based on temperature measurement data from the first and second radiation thermometers, controls the electrical power applied to the first and second heaters respectively to adjust the first and second temperature measuring positions of the wafer to a predetermined temperature. A second distance from the central axis to the second temperature measuring position is longer than a first distance from the central axis to the first temperature measuring position and shorter than 0.8 times the radius of the wafer.

[0007] Invention Effects According to the present invention, a semiconductor manufacturing apparatus is provided that can control the temperature measurement position of the wafer and appropriately manage the power applied to the heater. Furthermore, the present invention can also provide a semiconductor manufacturing apparatus capable of suppressing wafer deformation caused by temperature deviations within the wafer surface. Attached Figure Description

[0008] Figure 1 This is a cross-sectional view showing an example of the structure of the semiconductor manufacturing apparatus according to the first embodiment.

[0009] Figure 2 This is a block diagram illustrating an example of the functional structure for temperature control of a wafer in the control unit of the semiconductor manufacturing apparatus of the first embodiment.

[0010] Figure 3 This is a top view of a base in which a wafer is placed in a semiconductor manufacturing apparatus according to the first embodiment.

[0011] Figure 4 This is a top view of the first heater and the second heater included in the semiconductor manufacturing apparatus of the first embodiment.

[0012] Figure 5 This is a cross-sectional view of the base and the wafer showing the temperature measurement positions of the first and second radiation thermometers in the comparative example.

[0013] Figure 6 This is a cross-sectional view of the base and wafer showing the temperature measurement positions of the first and second radiation thermometers in the first embodiment.

[0014] Figure 7This is a cross-sectional view showing the relationship between the temperature measuring positions of the first and second radiation thermometers in the comparative example and the radiant heat of the first and second heaters.

[0015] Figure 8 This is a graph showing the temperature profile of the wafer in the comparative example and the apparent power supplied to the first and second heaters.

[0016] Figure 9 This is a cross-sectional view showing the relationship between the temperature measuring positions of the first and second radiation thermometers and the radiant heat of the first and second heaters in the embodiment of the first implementation.

[0017] Figure 10 This is a graph showing the temperature profile of the wafer and the apparent power supplied to the first heater and the second heater in the embodiment of the first implementation.

[0018] Figure 11 This is a graph showing the relationship between the ratio of temperature measurement position M2 to the wafer radius and the heater output balance ratio.

[0019] Figure 12 This is a cross-sectional view of the base, the first heater, the second heater, and the wafer, showing the relationship between the temperature measuring positions of the first and second radiation thermometers and the first and second heaters in the comparative example.

[0020] Figure 13 This is a cross-sectional view of the base, the first heater, the second heater, and the wafer, showing the relationship between the temperature measuring positions of the first and second radiation thermometers and the first and second heaters in the second embodiment.

[0021] Figure 14 This is a cross-sectional view of the base and the wafer showing the relationship between the temperature measuring positions of the first and second radiation thermometers in the comparative example and the warping of the wafer.

[0022] Figure 15 This is a cross-sectional view of the base and the wafer showing the relationship between the temperature measuring positions of the first and second radiation thermometers and the warping of the wafer in the third embodiment.

[0023] Explanation of reference numerals in the attached figures 1… Semiconductor manufacturing apparatus, 10… Chamber, 11… Exhaust port, 12… Rotating body, 13… Base, 14… First heater, 15… Second heater, 16… Gate valve, 20… Gas supply unit, 21… Rectifier plate, 22… First partition plate, 23… Second partition plate, 24… Third partition plate, 25… First gas region, 26… Second gas region, 27… Third gas region, 28… Fourth gas region, 31~33… Gas supply nozzle, 34… Temperature measuring nozzle, 35… Nozzle cover, 41… Temperature measuring window, 50… First radiation thermometer, 50… Second radiation thermometer, 60… Control unit, 61… First heater control unit, 62… Second heater control unit, 100… Wafer. Detailed Implementation

[0024] Hereinafter, embodiments will be described with reference to the accompanying drawings. The embodiments illustrate apparatuses and methods for embodying the technical concept of the invention. The drawings are schematic or conceptual, and the dimensions and proportions of each drawing may not be the same as actual dimensions and proportions. The technical concept of the present invention is not limited to the shape, structure, or arrangement of the constituent elements.

[0025] In the following embodiments, the semiconductor manufacturing apparatus will be described as a monolithic CVD apparatus. However, the semiconductor manufacturing apparatus is not limited to a CVD apparatus. It can be an annealing apparatus or an epitaxial growth apparatus. This embodiment can be applied as long as the semiconductor manufacturing apparatus has a monolithic substrate heating mechanism.

[0026] 1. First Implementation Method 1.1 Device Structure First, refer to Figure 1 An example of the overall structure of semiconductor manufacturing apparatus 1 will be described. Figure 1 This is a cross-sectional view showing an example of the structure of a semiconductor manufacturing apparatus 1.

[0027] In the following description, with the semiconductor manufacturing apparatus 1 installed, the direction of gravity is defined as "down," and its opposite direction is defined as "up." In the cross-sectional view of the semiconductor manufacturing apparatus 1, the lower side of the figure represents the lower side of the semiconductor manufacturing apparatus 1, and the upper side of the figure represents the upper side of the semiconductor manufacturing apparatus 1. Furthermore, in the semiconductor manufacturing apparatus 1, the up-down direction is defined as the Z-direction. The direction intersecting the Z-direction is defined as the X-direction, and the direction intersecting both the X and Z directions is defined as the Y-direction. The XY plane defined by the X and Y directions is parallel to the ground plane of the semiconductor manufacturing apparatus 1.

[0028] like Figure 1As shown, the semiconductor manufacturing apparatus 1 includes a chamber 10, an exhaust port 11, a rotating body 12, a base 13, a first heater 14, a second heater 15, a gate valve 16, a gas supply unit 20, a rectifier plate 21, a first partition plate 22, a second partition plate 23, a third partition plate 24, a gas supply nozzle 31, a gas supply nozzle 32 and a gas supply nozzle 33, a temperature measuring nozzle 34, a nozzle cover 35, a temperature measuring window 41, a first radiation thermometer 50, a second radiation thermometer 51, and a control unit 60.

[0029] Chamber 10 is the housing for CVD. Chamber 10 is made of stainless steel, for example. Alternatively, other materials can be used. For example, a gate valve 16 is provided in chamber 10. Wafer 100 is conveyed from outside chamber 10 into chamber 10 via gate valve 16. Furthermore, wafer 100 can be Si (silicon) or other substrates such as SiC (silicon carbide). Chamber 10 can be maintained at a suitable temperature, for example, to suppress the adhesion of reaction products to the inner wall surface, via a temperature control mechanism (not shown). For example, chamber 10 is cooled by a refrigerant (e.g., water) or cooling gas. An exhaust port 11 is provided at the bottom of chamber 10. Exhaust port 11 is connected to an exhaust device (not shown). Gas supplied to chamber 10 is discharged to the exhaust device via exhaust port 11. For example, chamber 10 is maintained at a reduced pressure (pressure lower than atmospheric pressure). Alternatively, the pressure inside chamber 10 can be atmospheric pressure (normal pressure).

[0030] The rotating body 12 is disposed on the bottom surface of the chamber 10. The rotating body 12 can rotate about the central axis CA of the rotating body 12 extending in the Z direction by a rotating mechanism (not shown). For example, the rotating body 12 can rotate at a high speed of 600 rpm or more.

[0031] A base 13 is disposed on the rotating body 12. For example, the base 13 has a circular plate shape. The center of the base 13 (the central axis extending along the Z direction) coincides with the central axis CA of the rotating body 12. A recess (counterfeit hole) for mounting the wafer 100 is provided on the upper surface of the base 13. The wafer 100 is mounted on the recess of the base 13. The wafer 100 is preferably mounted with its center in the XY plane aligned with the central axis CA. The semiconductor manufacturing apparatus 1 rotates the wafer 100 by rotating the rotating body 12. The base 13 is, for example, made of carbon. Alternatively, the base 13 may also be made of materials with a heat resistance of 1700°C or higher, such as SiC (silicon carbide), TaC (tantalum carbide), W (tungsten), or Mo (molybdenum).

[0032] A first heater 14 and a second heater 15 are disposed inside the rotating body 12. The first heater 14 has a circular plate shape centered on the central axis CA. The second heater 15 has an annular shape centered on the central axis CA. On the same XY plane, the second heater 15 is arranged to surround the outer periphery of the first heater 14. Furthermore, the structure of the heater used to heat the wafer 100 (base 13) is not limited to this. The heater may also be divided into three or more blocks. The heater may be a resistance heater, a lamp heater, or an induction heater. The first heater 14 and the second heater 15 heat the base 13 (and the wafer 100) from the back side (lower surface) of the base 13. For example, in the case where the semiconductor manufacturing apparatus 1 is a SiC epitaxial growth apparatus, the wafer 100 is heated to 1500°C or higher. The first heater 14 mainly heats the central region of the base 13 (wafer 100). The second heater 15 mainly heats the outer peripheral region of the base 13 (wafer 100). The temperatures of the first heater 14 and the second heater 15 are controlled separately by the control unit 60.

[0033] A gas supply unit 20 is disposed, for example, on the chamber 10. For example, the gas supply unit 20 has a cylindrical shape. For example, the inner diameter of the gas supply unit 20 is larger than the diameter of the wafer 100 and smaller than the inner diameter of the chamber 10. The gas supply unit 20 supplies various gases into the chamber 10. Figure 1 In the example shown, gases A, B, C, and D are supplied to the gas supply unit 20. Furthermore, the type and number of gases supplied to the gas supply unit 20 depend on the film deposition process. Gases A, B, C, and D supplied from the gas supply unit 20 into the chamber 10 flow toward the wafer 100. To suppress temperature rise of the supplied gases and adhesion of reaction products to the gas supply unit 20, the gas supply unit 20 can be managed at an appropriate temperature using a temperature control mechanism (not shown). For example, the gas supply unit 20 is cooled by a refrigerant (e.g., water) or a cooling gas.

[0034] The rectifier plate 21 rectifies the fluid (gas) supplied from the gas supply section 20 into the chamber 10. The rectifier plate 21 is disposed at the bottom of the gas supply section 20. For example, the rectifier plate 21 is made of quartz. Alternatively, the rectifier plate 21 may be made of other materials such as stainless steel. The rectifier plate 21 has, for example, a circular plate shape. For example, the diameter of the rectifier plate 21 is larger than the diameter of the wafer 100. The lower surface of the rectifier plate 21 faces the upper surface of the wafer 100 (base 13). The rectifier plate 21 is preferably configured such that its lower surface is parallel to the wafer 100 mounted on the base 13. The rectifier plate 21 has a plurality of through holes extending in the Z direction for supplying gas into the chamber 10.

[0035] A first partition plate 22 is disposed separately along the Z-direction between the rectifier plate 21 and the top plate of the gas supply section 20. The first partition plate 22 has multiple through holes for the passage of gas supply nozzles 31, 32, 33, and 34. A first gas region 25 is disposed between the rectifier plate 21 and the first partition plate 22. Gas D is supplied to the first gas region 25. For example, gas D is a cleaning gas.

[0036] The second partition plate 23 is disposed separately along the Z-direction between the first partition plate 22 and the top plate of the gas supply section 20. The second partition plate 23 has multiple through holes for the gas supply nozzle 32, the gas supply nozzle 33, and the temperature measuring nozzle 34 to pass through. A second gas region 26 is disposed between the first partition plate 22 and the second partition plate 23. Gas C is supplied to the second gas region 26. For example, gas C is a CVD process gas.

[0037] A third partition plate 24 is disposed separately in the Z direction between the second partition plate 23 and the top plate of the gas supply unit 20. The third partition plate 24 has multiple through holes for the gas supply nozzle 33 and the temperature measuring nozzle 34 to pass through. A third gas region 27 is provided between the second partition plate 23 and the third partition plate 24. Gas B is supplied to the third gas region 27. For example, gas B is a CVD process gas. In addition, a fourth gas region 28 is provided between the third partition plate 24 and the top plate of the gas supply unit 20. Gas A is supplied to the fourth gas region 28. For example, gas A is a cleaning gas. Furthermore, the number of partition plates provided in the gas supply unit 20 can be appropriately set according to the type of gas supplied.

[0038] The gas supply nozzle 31 extends along the Z direction. The gas supply nozzle 31 passes through the rectifier plate 21 and the first partition plate 22. Gas C in the second gas region 26 is supplied to the chamber 10 through the gas supply nozzle 31.

[0039] The gas supply nozzle 32 extends along the Z direction. The gas supply nozzle 32 passes through the rectifier plate 21, the first partition plate 22, and the second partition plate 23. Gas B in the third gas region 27 is supplied to the chamber 10 through the gas supply nozzle 32.

[0040] The gas supply nozzle 33 extends along the Z direction. The gas supply nozzle 33 passes through the rectifier plate 21, the first partition plate 22, the second partition plate 23, and the third partition plate 24. Gas A in the fourth gas region 28 is supplied to the chamber 10 through the gas supply nozzle 33.

[0041] A gap is provided between the through hole of the rectifier plate 21 and the gas supply nozzles 31, 32, 33 and 34. The gas D in the first gas region 25 is supplied to the chamber 10 through the gaps with each nozzle.

[0042] A temperature-measuring nozzle 34 is used by the first radiation thermometer 50 and the second radiation thermometer 51 to measure the temperature of the wafer 100. The temperature-measuring nozzle 34 extends along the Z-direction. The temperature-measuring nozzle 34 penetrates the rectifier plate 21, the first partition plate 22, the second partition plate 23, and the third partition plate 24. Figure 1 In the example shown, two temperature measuring nozzles 34 are provided, corresponding to the first radiation thermometer 50 and the second radiation thermometer 51. However, the number of temperature measuring nozzles 34 is not limited to two. For example, one temperature measuring nozzle 34 may be provided corresponding to the first radiation thermometer 50 and the second radiation thermometer 51, or three or more temperature measuring nozzles 34 may be provided to change the temperature measuring position.

[0043] A nozzle cap 35 is provided at the upper end of each temperature measuring nozzle 34. The nozzle cap 35 is, for example, made of quartz. Furthermore, the nozzle cap 35 can be made of any material that allows light within the wavelength range measured by the first radiation thermometer 50 and the second radiation thermometer 51 to pass through. Alternatively, the nozzle cap 35 can be discarded. In this case, gas A in the fourth gas region 28 can be supplied to the chamber 10 via the gas supply nozzle 33 and the temperature measuring nozzle 34.

[0044] A temperature measuring window 41 is provided on a portion of the top plate (upper surface) of the gas supply section 20. The number and shape of the temperature measuring windows 41 are arbitrary. The temperature measuring window 41 allows reflected light and thermal radiation light (infrared light) from the wafer 100 to pass through. The temperature measuring window 41 is used by the first radiation thermometer 50 and the second radiation thermometer 51 to measure the temperature of the wafer 100. The temperature measuring window 41 is, for example, made of quartz. In addition, the temperature measuring window 41 can be made of any material that allows the wavelength range of the light measured by the first radiation thermometer 50 and the second radiation thermometer 51 to pass through.

[0045] The first radiation thermometer 50 and the second radiation thermometer 51 are pyrometers. The first radiation thermometer 50 and the second radiation thermometer 51 are positioned above the temperature measuring window 41. The first radiation thermometer 50 and the second radiation thermometer 51 measure the temperature of the wafer 100 through the temperature measuring window 41, the nozzle cover 35, and the temperature measuring nozzle 34. The first radiation thermometer 50 and the second radiation thermometer 51 measure the temperature of the wafer 100 in a non-contact manner based on the reception of thermal radiation light (infrared light) emitted from the surface of the wafer 100. The measurement principle is based on Planck's law. The first radiation thermometer 50 and the second radiation thermometer 51 are arranged, for example, in the radial direction of the wafer 100. The first radiation thermometer 50 is positioned closer to the center (central axis CA) of the wafer 100 than the second radiation thermometer 51. The first radiation thermometer 50 is used for temperature measurement of the inner region of the wafer 100. The second radiation thermometer 51 is used for temperature measurement of the outer region of the wafer 100. In other words, the temperature measurement position of the first radiation thermometer 50 on the wafer 100 is closer to the center (central axis CA) of the wafer 100 than the temperature measurement position of the second radiation thermometer 51 on the wafer 100. Alternatively, a radiation thermometer can be moved radially along the wafer 100 to measure the temperature of the inner and outer regions of the wafer 100.

[0046] The control unit 60 controls the entire semiconductor manufacturing apparatus 1. For example, the control unit 60 includes a CPU (Central Processing Unit) for controlling the semiconductor manufacturing apparatus 1 and a storage unit for storing various programs and process parameters. The control unit 60 executes the film deposition process based on the process parameters. More specifically, the control unit 60 controls the rotation mechanism of the rotating body 12. The control unit 60 controls the first heater 14 and the second heater 15 based on the temperature measurements from the first radiation thermometer 50 and the second radiation thermometer 51. The control unit 60 controls the supply of gas to the chamber 10. The control unit 60 controls an exhaust device (not shown) to control the pressure inside the chamber 10. The control unit 60 controls a gate valve 16 and a wafer 100 transport mechanism (not shown), etc. Thus, the control unit 60 controls the movement of the wafer 100 into and out of the chamber 10.

[0047] Reference Figure 2 An example of the functional structure for temperature control of the chip 100 in the control unit 60 will be explained. Figure 2 This is a block diagram illustrating an example of the functional structure for temperature control of the chip 100 in the control unit 60.

[0048] like Figure 2 As shown, the control unit 60 includes a first heater control unit 61 and a second heater control unit 62. The first heater control unit 61 and the second heater control unit 62 implement their functions, for example, through firmware or programs executed by the control unit 60.

[0049] The first heater control unit 61 controls the power applied to the first heater 14 based on the temperature measurement result of the first radiation thermometer 50 (hereinafter, temperature control based on temperature measurement result will be described as "temperature adjustment control"). In addition, the first heater control unit 61 controls the temperature of the first heater 14 based on a preset heater output (e.g., apparent power) (hereinafter, temperature control based on preset heater output will be described as "fixed output control").

[0050] Similar to the first heater control unit 61, the second heater control unit 62 performs temperature adjustment control of the second heater 15 based on the temperature measurement results of the second radiation thermometer 51. Additionally, the second heater control unit 62 performs fixed output control of the second heater 15.

[0051] 1.2 Planar Structure of the Base Next, refer to Figure 3 An example of the planar structure of base 13 will be described. Figure 3 This is a top view of the base 13 with the chip 100 mounted on it.

[0052] like Figure 3 As shown, a wafer 100 is mounted on a base 13. The wafer 100 is, for example, 8 inches in size. A notch NC is provided on the wafer 100. The notch is provided on silicon wafers 8 inches or larger. However, the size of the wafer 100 is not limited to 8 inches. The size of the wafer 100 can be 6 inches or less, or 12 inches or more. For example, when the size of the wafer 100 is 6 inches or less, an orientation plane is provided on the wafer 100.

[0053] A recess (counterfeit hole) for mounting the wafer 100 is provided on the upper surface of the base 13. Thus, the wafer 100 is mounted on the base 13 with its center portion aligned with the central axis CA in the XY plane. Alternatively, recesses corresponding to multiple wafer sizes may be provided on the base 13.

[0054] The radius Rs of the base 13 is greater than the radius Rw of the wafer 100. That is, the radius Rs of the base 13 and the radius Rw of the wafer 100 are in the relationship that Rs > Rw.

[0055] A first radiation thermometer 50 and a second radiation thermometer 51 are disposed above the wafer 100 (temperature measuring window 41). The wafer 100 rotates via the rotating body 12. Therefore, the first radiation thermometer 50 and the second radiation thermometer 51 respectively measure the temperature on circles with different radii centered on the central axis CA. Furthermore, the rotation period of the wafer 100 can be synchronized with or asynchronous with the timing of the measurements taken by the first radiation thermometer 50 and the second radiation thermometer 51.

[0056] For example, the temperature measuring position of the first radiation thermometer 50 is set as M1. The temperature measuring position M1 is located on a circle with radius R1 centered on the central axis CA. Similarly, the temperature measuring position of the second radiation thermometer 51 is set as M2. The temperature measuring position M2 is located on a circle with radius R2 centered on the central axis CA. In other words, the distance from the central axis CA (the center of the wafer 100) to the temperature measuring position M1 is R1, and the distance from the central axis CA (the center of the wafer 100) to the temperature measuring position M2 is R2. At this time, the radius R1 of the temperature measuring position M1, the radius R2 of the temperature measuring position M2, and the radius Rw of the wafer 100 are in the relationship of 0 ≤ R1 < R2 < Rw. In this embodiment, in order to suppress the difference in heater output (apparent power) between the first heater 14 and the second heater 15 in the temperature adjustment control, the radius R2 of the temperature measuring position M2 is made greater than the radius R1 of the temperature measuring position M1 and less than 0.8 times (0.8 Rw) of the radius Rw of the wafer 100. In this case, the radius R1 of the circumference based on temperature measurement position M1, the radius R2 of the circumference based on temperature measurement position M2, and the radius Rw of wafer 100 are in the relationship 0 ≤ R1 < R2 < 0.8 Rw. In other words, the distance R2 from the central axis CA (the center of wafer 100) to temperature measurement position M2 is longer than the distance R1 from the central axis CA (the center of wafer 100) to temperature measurement position M1 and shorter than 0.8 times the radius Rw of wafer 100.

[0057] 1.3 Planar structure of the first and second heaters Next, refer to Figure 4 An example of the planar structure of the first heater 14 and the second heater 15 will be described. Figure 4 This is a top view of the first heater 14 and the second heater 15.

[0058] like Figure 4 As shown, the first heater 14 and the second heater 15 are arranged in a concentric circle around the central axis CA. The second heater 15 surrounds the outer periphery of the first heater 14. The radius of the circular plate-shaped first heater 14 is set as Ra. The inner diameter of the annular-shaped second heater 15 is set as Rb. in Set the outer diameter to Rb out The radius Ra of the first heater 14 and the inner diameter Rb of the second heater 15 are... in and outer diameter Rb out In Ra < Rb in <Rb out The relationship between the radius Ra of the first heater 14 and the inner diameter Rb of the second heater 15. in The radius Rw is smaller than that of the wafer 100. Additionally, the outer diameter Rb of the second heater 15... out It can be smaller than or larger than the radius Rw of wafer 100. Figure 4Rb represents the outer diameter of the second heater 15. out The case where the radius Rw is greater than 100 of the wafer.

[0059] 1.4 Specific examples of the relationship between the temperature measurement positions of the first and second radiation thermometers and the temperature curve of the wafer. Next, refer to Figures 5-11 A specific example illustrating the relationship between the temperature measurement positions of the first radiation thermometer 50 and the second radiation thermometer 51 and the temperature curve of the wafer 100 will be provided. Figure 5 This is a cross-sectional view of the base 13 and the chip 100 showing the temperature measuring positions of the first radiation thermometer 50 and the second radiation thermometer 51 in the comparative example. Figure 6 This is a cross-sectional view of the base 13 and the wafer 100 showing the temperature measuring positions of the first radiation thermometer 50 and the second radiation thermometer 51 in the embodiment of this invention. Figure 7 This is a cross-sectional view showing the relationship between the temperature measuring position M1 of the first radiation thermometer 50 and the temperature measuring position M2c of the second radiation thermometer 51 in the comparative example and the radiant heat of the first heater 14 and the second heater 15. Figure 8 This is a graph showing the temperature profile of the wafer 100 in the comparative example and the apparent power supplied to the first heater 14 and the second heater 15. The unit of apparent power is Arbitrary Unit (AU). Figure 9 This is a cross-sectional view showing the relationship between the temperature measuring position M1 of the first radiation thermometer 50 and the temperature measuring position M2 of the second radiation thermometer 51 in this embodiment and the radiant heat of the first heater 14 and the second heater 15. Figure 10 This is a graph showing the temperature profile of the wafer 100 in this embodiment and the apparent power supplied to the first heater 14 and the second heater 15. The unit of apparent power is arbitrary unit (AU). Figure 11 This is a graph showing the relationship between the ratio of the temperature measurement position M2 to the wafer radius Rw and the heater output balance ratio. In the following explanation, we will focus on the temperature measurement position M2 of the second radiation thermometer 51.

[0060] First, the temperature measurement positions of the first radiation thermometer 50 and the second radiation thermometer 51 in the comparative example and the embodiment of this invention will be explained in relation to the position of the wafer 100.

[0061] like Figure 5 and Figure 6As shown, the temperature measuring position M1 of the first radiation thermometer 50 in the comparative example is the same as the temperature measuring position M1 in the embodiment. The temperature measuring position M1 in both the comparative example and the embodiment is located on a circle with a radius R1 centered on the central axis CA. In other words, the distance from the central axis CA (the center of the wafer 100) to the temperature measuring position M1 in the comparative example and the embodiment is R1. For example, the radius R1 of the temperature measuring position M1 is 0.2 times the radius Rw of the wafer 100 (R1 = 0.2 Rw). Furthermore, the radius R1 of the temperature measuring position M1 is not limited to R1 = 0.2 Rw.

[0062] like Figure 5 As shown, the temperature measuring position of the second radiation thermometer 51 in the comparative example is set to M2c. The temperature measuring position M2c is located on a circle with a radius R2c centered on the central axis CA. In other words, the distance from the central axis CA (the center of the wafer 100) to the temperature measuring position M2c in the comparative example is R2c. The temperature measuring position M2c is set at a position where 0.8 Rw < R2c < Rw. That is, the temperature measuring position M2c is set near the outer periphery of the wafer 100.

[0063] like Figure 6 As shown, in contrast, the temperature measuring position M2 of the second radiation thermometer 51 in this embodiment is located on a circle with a radius R2 centered on the central axis CA. In other words, the distance from the central axis CA (the center of the wafer 100) to the temperature measuring position M2 in this embodiment is R2. The temperature measuring position M2 is set at a position where R1 < R2 < 0.8 Rw.

[0064] Next, the relationship between the temperature measurement positions M1 and M2c in the comparative example and the radiant heat of the first heater 14 and the second heater 15 will be explained.

[0065] like Figure 7 As shown, a first heater 14 is disposed below the temperature measurement position M1 of the wafer 100, separated from the base 13. When viewed from above in the Z direction, the second heater 15 is located away from the temperature measurement position M1. Therefore, at the temperature measurement position M1, the wafer 100 (base 13) is primarily heated by thermal radiation H1a from the first heater 14. Consequently, the effect of thermal radiation H2a from the second heater 15 on the temperature measurement position M1 is smaller than that from the first heater 14.

[0066] A second heater 15 is disposed below the temperature measurement position M2c of the wafer 100, separated from the base 13. When viewed from above in the Z direction, the first heater 14 is located away from the temperature measurement position M2c. Therefore, at the temperature measurement position M2c, the wafer 100 (base 13) is primarily heated by thermal radiation H2b from the second heater 15. Consequently, the effect of thermal radiation H1b from the first heater 14 on the temperature measurement position M2c is smaller than that from the second heater 15.

[0067] Next, the temperature profile of the wafer 100 in the comparative example and the apparent power supplied to the first heater 14 and the second heater 15 will be explained. Figure 8 The example shown illustrates the case where the wafer 100 is heated to temperature TMP1 at temperature measurement position M1, and heated to temperature TMP2 at temperature measurement position M2. Figure 8 In the example shown, temperature TMP2 is set to a temperature slightly lower than temperature TMP1. Alternatively, temperatures TMP1 and TMP2 can be the same, or TMP2 can be a temperature higher than TMP1.

[0068] like Figure 8 As shown, for example, during the heating period (time t0~t1) and cooling period (time t2~t3) of the wafer 100, the deviation between the set temperature and the measured temperature is large. Therefore, in order to prevent excessive supply of apparent power to the first heater 14 and the second heater 15, the control unit 60 performs fixed output control on the first heater 14 and the second heater 15. Alternatively, the control unit 60 may perform temperature adjustment control on the first heater 14 and the second heater 15 based on a preset heating rate, etc., instead of fixed output control.

[0069] exist Figure 8 In the example shown, during the period from time t0 to t1, the control unit 60 supplies power to the first heater 14 and the second heater 15 by gradually increasing the apparent power through fixed output control. As a result, the wafer 100 gradually heats up. For example, the control unit 60 supplies the second heater 15 with more than three times the apparent power of the first heater 14. Hereinafter, the ratio of the apparent power supplied to the second heater 15 to the apparent power supplied to the first heater 14 is defined as the heater output balance ratio. The heater output balance ratio during the period from time t0 to t1 is approximately 3.

[0070] During the period from time t1 to t2, the control unit 60 (first heater control unit 61) maintains the temperature of the wafer 100 at temperature measurement position M1 at temperature TMP1 based on the temperature measurement result of the first radiation thermometer 50. Similarly, the control unit 60 (second heater control unit 62) maintains the temperature of the wafer 100 at temperature measurement position M2c at temperature TMP2 based on the temperature measurement result of the second radiation thermometer 51. That is, the first heater 14 and the second heater 15 are controlled by temperature adjustment. At this time, the control unit 60 supplies the second heater 15 with approximately 2.4 times the apparent power of the first heater 14. That is, the heater output balance ratio is approximately 2.4.

[0071] During the period from time t2 to t3, the temperature of the wafer 100 decreases. The control unit 60 performs fixed output control on the first heater 14 and the second heater 15.

[0072] Next, the relationship between the temperature measurement locations M1 and M2 in the embodiment and the radiant heat of the first heater 14 and the second heater 15 will be explained.

[0073] like Figure 9 As shown, with the use Figure 7 Similarly, in the comparative example, a first heater 14 is disposed below the temperature measurement position M1 of the wafer 100, separated by the base 13. When viewed from above in the Z direction, the second heater 15 is located away from the temperature measurement position M1. Therefore, at the temperature measurement position M1, the wafer 100 (base 13) is primarily heated by thermal radiation H1a from the first heater 14. Consequently, the effect of thermal radiation H2a from the second heater 15 on the temperature measurement position M1 is smaller than that from the first heater 14.

[0074] In this embodiment, the temperature measuring position M2 is located inside the wafer 100 compared to the temperature measuring position M2c in the comparative example. Therefore, the distance from the end of the first heater 14 to the temperature measuring position M2 is shorter than the distance from the end of the first heater 14 to the temperature measuring position M2c. Figure 9 In the example shown, a first heater 14 and a second heater 15 are disposed near the temperature measurement position M2 of the wafer 100, separated by the base 13. Therefore, at the temperature measurement position M2, the wafer 100 (base 13) is heated by thermal radiation H1b from the first heater 14 and thermal radiation H2b from the second heater 15. The thermal radiation H1b from the first heater 14 has a greater impact on the temperature measurement position M2 than the thermal radiation H1b from the first heater 14 has on the temperature measurement position M2c in the comparative example. Furthermore, the thermal radiation H2b from the second heater 15 has a smaller impact on the temperature measurement position M2 than the thermal radiation H2b from the second heater 15 has on the temperature measurement position M2c in the comparative example.

[0075] For example, in the temperature measurement position M2 of the embodiment and using Figure 7In the comparative example where the temperature measuring position M2c is controlled to the same temperature, the temperature measuring position M2 is more strongly affected by the thermal radiation light H1b from the first heater 14 than the temperature measuring position M2c. Therefore, the temperature of the second heater 15 used to heat the temperature measuring position M2 is lower in the embodiment than in the comparative example. That is, the apparent power supplied to the second heater 15 is lower in the embodiment than in the comparative example. When the apparent power supplied to the second heater 15 decreases, the effect of the thermal radiation light H2a from the second heater 15 on the temperature measuring position M1 is smaller than in the comparative example. Therefore, the temperature of the first heater 14 used to heat the temperature measuring position M1 is higher in the embodiment than in the comparative example. That is, the apparent power supplied to the first heater 14 is greater in the embodiment than in the comparative example. Therefore, when the temperature measuring position is moved from M2c to M2, there is a tendency for the apparent power supplied to the first heater 14 to increase and the apparent power supplied to the second heater 15 to decrease.

[0076] Next, the temperature profile of the wafer 100 in the embodiment and the apparent power supplied to the first heater 14 and the second heater 15 will be described. Figure 10 Examples and usage shown Figure 8 Similarly, the comparative example described illustrates the case where the wafer 100 is heated to temperature TMP1 at temperature measurement position M1 and to temperature TMP2 at temperature measurement position M2.

[0077] like Figure 10 As shown, the temperature of the wafer 100 rises during the period from time t0 to t1. In this embodiment, compared to the comparative example, the apparent power supplied to the first heater 14 increases, while the apparent power supplied to the second heater 15 decreases. The control unit 60 controls the output by a fixed output, for example, supplying the second heater 15 with approximately 2.1 times the apparent power of the first heater 14. That is, the heater output balance ratio is approximately 2.1. In this embodiment, compared to the comparative example, the heater output balance ratio decreases.

[0078] During the period from time t1 to t2, control unit 60 (first heater control unit 61) maintains the temperature of wafer 100 at temperature measurement position M1 at temperature TMP1 based on the temperature measurement result of first radiation thermometer 50. Similarly, control unit 60 (second heater control unit 62) maintains the temperature of wafer 100 at temperature measurement position M2 at temperature TMP2 based on the temperature measurement result of second radiation thermometer 51. That is, first heater 14 and second heater 15 are controlled by temperature adjustment. In the embodiment, control unit 60 supplies approximately the same apparent power to first heater 14 and second heater 15. That is, the heater output balance ratio is approximately 1. In this case, the total apparent power supplied to first heater 14 and second heater 15 is equal to the power used. Figure 8 The comparative example described is lower.

[0079] During the period from time t2 to t3, the temperature of the wafer 100 decreases. The control unit 60 performs fixed output control on the first heater 14 and the second heater 15.

[0080] Next, the relationship between the ratio of the temperature measurement position M2 to the wafer radius Rw and the heater output balance ratio will be explained.

[0081] like Figure 11 As shown, when the ratio of the temperature measurement position M2 to the wafer radius Rw increases, there is a tendency for the heater output balance ratio to increase. In other words, the closer the radius R2 of the temperature measurement position M2 is to the radius Rw of the wafer 100, the greater the apparent power supplied to the second heater 15 is relative to the apparent power supplied to the first heater 14.

[0082] For example, in order to suppress deformation caused by in-plane temperature deviations of the wafer 100 and to properly manage the lifespan of the first heater 14 and the second heater 15, it is preferable to keep the upper limit of the heater output balance ratio less than 2. Figure 11 As shown, when the heater output balance ratio is 2, the ratio of the temperature measuring position M2 to the wafer radius Rw is 0.81. Therefore, it is preferable to make the temperature measuring position M2 less than 0.8 Rw (0.8 times the radius Rw). Therefore, the radius R2 of the temperature measuring position M2 is set to R1 < R2 < 0.8 Rw. Furthermore, similarly, it is more preferable to make the lower limit of the heater output balance ratio greater than 0.5. Figure 11 As shown, with a heater output balance ratio of 0.5, the ratio of temperature measurement position M2 to wafer radius Rw is 0.49. Therefore, it is preferable to make temperature measurement position M2 greater than 0.5 Rw (0.5 times the radius Rw). Therefore, when the radius R1 of temperature measurement position M1 is less than 0.5 Rw (R1 < 0.5 Rw), the radius R2 of temperature measurement position M2 is set to 0.5 Rw < R2 < 0.8 Rw.

[0083] 1.5 Effects of this implementation method For example, if the heater output balance ratio exceeds 2, the heating balance within the wafer 100 plane deteriorates, and the temperature deviation within the plane increases. When the temperature deviation increases, deformation, strain, crystal defects, etc., of the wafer 100 are more likely to occur. Furthermore, since the apparent power supplied to the second heater 15 is greater than that to the first heater 14, the load on the second heater 15 increases. As a result, the lifespan of the second heater 15 is shorter than that of the first heater 14. When the difference in lifespan between the first heater 14 and the second heater 15 becomes large, maintenance (component replacement) is performed at different intervals. Therefore, the operating time of the semiconductor manufacturing apparatus 1 decreases, and the processing capacity is reduced. Additionally, if the lifespan is shortened and the maintenance frequency increases, maintenance costs increase.

[0084] In contrast, according to the structure of this embodiment, the temperature measuring position M2 of the second radiation thermometer 51 can be set to R1 < R2 < 0.8 Rw. That is, the radius R2 of the temperature measuring position M2 can be larger than the radius R1 of the temperature measuring position M1 and smaller than 0.8 times (0.8 Rw) the radius Rw of the wafer 100. As a result, the heater output balance ratio can be suppressed to less than 2. As a result, the heater lifespan can be properly managed.

[0085] Furthermore, according to the structure of this embodiment, when the radius R1 of the temperature measuring position M1 of the first radiation thermometer 50 is less than 0.5 Rw (R1 < 0.5 Rw), the radius R2 of the temperature measuring position M2 can be set to 0.5 Rw < R2 < 0.8 Rw. That is, the radius R2 of the temperature measuring position M2 can be greater than 0.5 times (0.5 Rw) and less than 0.8 times (0.8 Rw) of the radius Rw of the wafer 100. As a result, the heater output balance ratio can be controlled to be greater than 0.5 and less than 2. As a result, the heater lifespan can be appropriately managed.

[0086] 2. Second Implementation Method Next, the second embodiment will be described. In the second embodiment, the setting range of the temperature measuring position M2 will be determined based on the positional relationship between the first heater 14 and the second heater 15. Hereinafter, the description will focus on the differences from the first embodiment.

[0087] 2.1 Relationship between the temperature measuring positions of the first and second radiation thermometers and the first and second heaters First, refer to Figure 12 and Figure 13 The relationship between the temperature measuring positions of the first radiation thermometer 50 and the second radiation thermometer 51 and the first heater 14 and the second heater 15 is explained. Figure 12 This is a cross-sectional view of the base 13, the first heater 14, the second heater 15, and the wafer 100, showing the relationship between the temperature measuring positions of the first radiation thermometer 50 and the second radiation thermometer 51 in the comparative example and the first heater 14 and the second heater 15. Figure 13 This is a cross-sectional view of the base 13, the first heater 14, the second heater 15, and the wafer 100, showing the relationship between the temperature measuring positions of the first radiation thermometer 50 and the second radiation thermometer 51 and the first heater 14 and the second heater 15 in the embodiments of this invention. In the following description, the positional relationship between the temperature measuring position M2 of the second radiation thermometer 51 and the second heater 15 will be explained.

[0088] First, the relationship between the temperature measuring positions of the first radiation thermometer 50 and the second radiation thermometer 51 in the comparative example and the positions of the first heater 14 and the second heater 15 will be explained.

[0089] like Figure 12 As shown, in the comparative example, the temperature measuring position M1 of the first radiation thermometer 50 is positioned above the first heater 14. Figure 12 In the example shown, with Figure 5 and Figure 6 Similarly, the radius R1 of the temperature measuring position M1 is 0.2 times the radius Rw of the wafer 100 (R1 = 0.2 Rw). Furthermore, the radius Ra of the first heater 14 is, for example, 0.75 times the radius Rw of the wafer 100 (Ra = 0.75 Rw). In a top-down view from the Z direction, the radius R1 of the temperature measuring position M1 and the radius Ra of the first heater 14 are in a relationship of 0 ≤ R1 < Ra. In other words, the distance R1 from the central axis CA to the temperature measuring position M1 is shorter than the distance (radius) Ra from the central axis CA to the outer periphery of the first heater 14.

[0090] Furthermore, in the comparative example, the temperature measuring position M2c of the second radiation thermometer 51 is positioned above the second heater 15. Figure 12 In the example shown, the radius R2c of the temperature measuring position M2c is set at a position 0.9 times the radius Rw of the wafer 100 (R2c = 0.9 Rw). Additionally, for example, the inner diameter Rb of the second heater 15... in It is set at a position 0.8 times the radius Rw of wafer 100 (Rb) in =0.8 Rw). Viewed from above in the Z direction, the radius R2c of the temperature measuring position M2c and the inner diameter Rb of the second heater 15 are... in and outer diameter Rb out In Rb in <R2c<Rb out The relationship is as follows: In other words, the distance R2c from the central axis CA to the temperature measuring position M2c is greater than the distance (inner diameter) Rb from the central axis CA to the inner circumference of the second heater 15. in (=0.8 Rw) is longer than the distance (outer diameter) Rb from the central axis CA to the outer periphery of the second heater 15. out Short. In this case, similar to the comparative example of the first embodiment, at the temperature measurement position M2c, the wafer 100 is primarily heated by thermal radiation light H2b from the second heater 15, across the base 13. The thermal radiation light H1b from the first heater 14 has a smaller effect on the temperature measurement position M2c than the thermal radiation light H2b from the second heater 15.

[0091] Next, the temperature measurement positions of the first radiation thermometer 50 and the second radiation thermometer 51 in the embodiments of this invention will be explained in relation to the positions of the first heater 14 and the second heater 15.

[0092] like Figure 13 As shown, the temperature measuring position M1 of the first radiation thermometer 50 in this embodiment is positioned above the first heater 14, similar to the comparative example. In a top view from the Z direction, the radius R1 of the temperature measuring position M1 and the radius Ra of the first heater 14 are in a relationship of 0 ≤ R1 < Ra.

[0093] In addition, the temperature measuring position M2 of the second radiation thermometer 51 in the embodiment is set at a position greater than the inner diameter Rb of the second heater 15. in On the inner side, that is, near the first heater 14. Viewed from above in the Z direction, the radius R1 of temperature measuring position M1, the radius R2 of temperature measuring position M2, and the inner diameter Rb of the second heater 15 are... in In the case of R1 < R2 < Rb in The relationship is as follows: In other words, the distance R2 from the central axis CA to the temperature measuring position M2 is longer than the distance (radius) Ra from the central axis CA to the outer circumference of the first heater 14 and longer than the distance (inner diameter) Rb from the central axis CA to the inner circumference of the second heater 15. in Short. Figure 13 In the example shown, with Figure 12 Similarly, the inner diameter Rb of the second heater 15 in It is set at a position 0.8 times the radius Rw of wafer 100 (Rb) in =0.8 Rw). In this case, similarly to the first embodiment, the temperature measuring position M2 can be set to R1 < R2 < 0.8 Rw. Similar to the embodiment of the first embodiment, at the temperature measuring position M2, the wafer 100 (base 13) is heated by the thermal radiation light H1b from the first heater 14 and the thermal radiation light H2b from the second heater 15. Therefore, the temperature of the second heater 15 used to heat the temperature measuring position M2 is lower in the embodiment than in the comparative example. That is, the apparent power supplied to the second heater 15 is lower in the embodiment than in the comparative example. When the apparent power supplied to the second heater 15 decreases, the effect of the thermal radiation light H2a from the second heater 15 on the temperature measuring position M1 becomes smaller. Therefore, the temperature of the first heater 14 used to heat the temperature measuring position M1 is higher in the embodiment than in the comparative example. That is, the apparent power supplied to the first heater 14 is greater in the embodiment than in the comparative example. Therefore, if the radius R2 of the temperature measuring position M2 is made larger than the inner diameter Rb of the second heater 15... in If the apparent power is small, there is a tendency for the apparent power supplied to the first heater 14 to increase and the apparent power supplied to the second heater 15 to decrease.

[0094] 2.2 Effects of this implementation method According to the structure of this embodiment, the temperature measuring position M2 of the second radiation thermometer 51 can be set to R1 < R2 < Rb. in That is, the distance R2 from the central axis CA to the temperature measuring position M2 is longer than the distance (radius) Ra from the central axis CA to the outer periphery of the first heater 14 and longer than the distance (inner diameter) Rb from the central axis CA to the inner periphery of the second heater 15. in Short. Thus, the same effect as the first embodiment is obtained.

[0095] 3. Third Implementation Method Next, the third embodiment will be described. In the third embodiment, the setting range of the temperature measurement position M2 will be determined based on the effect of the warping of the wafer 100. Hereinafter, the description will focus on the differences from the first and second embodiments.

[0096] 3.1 Relationship between the temperature measuring positions of the first and second radiation thermometers and the warpage of the wafer 100 First, refer to Figure 14 and Figure 15 The relationship between the temperature measurement positions of the first radiation thermometer 50 and the second radiation thermometer 51 and the warping of the chip 100 is explained. Figure 14 This is a cross-sectional view of the base 13 and the wafer 100, showing the relationship between the temperature measuring positions of the first radiation thermometer 50 and the second radiation thermometer 51 in the comparative example and the warping of the wafer 100. Figure 15 This is a cross-sectional view of the base 13 and the wafer 100, showing the relationship between the temperature measuring positions of the first radiation thermometer 50 and the second radiation thermometer 51 in this embodiment and the warping of the wafer 100. In the following description, the temperature measuring position M2 of the second radiation thermometer 51 will be considered.

[0097] like Figure 14 (a) and Figure 15 As shown in (a), when the residual stress of wafer 100 is compressive stress, wafer 100 becomes a downwardly convex shape.

[0098] like Figure 14 (b) and Figure 15 As shown in (b), when the residual stress of wafer 100 is tensile stress, wafer 100 becomes an upwardly convex shape. The residual stress of wafer 100, i.e., the direction and amount of warpage of wafer 100, varies from wafer 100 to wafer 100.

[0099] like Figure 14As shown in (a) and (b), in the comparative example, regardless of the residual stress (warping direction and amount) of the wafer 100, the difference between the distance between the wafer 100 and the base 13 at temperature measurement position M1 and at temperature measurement position M2c is relatively large. Therefore, the responsiveness differs between the temperature control of the first heater 14 based on the temperature measurement result at temperature measurement position M1 and the temperature control of the second heater 15 based on the temperature measurement result at temperature measurement position M2c. Furthermore, at temperature measurement position M2c, the distance between the wafer 100 and the base 13 varies considerably depending on the warping direction of the wafer 100. Therefore, the temperature control (heater output) for each wafer 100 varies considerably. That is, the reproducibility of temperature control between wafers is relatively low.

[0100] like Figure 15 As shown in (a) and (b), in this embodiment, similarly to the first embodiment, the radius R1 of temperature measuring position M1, the radius R2 of temperature measuring position M2, and the radius Rw of wafer 100 are set to a relationship of 0 ≤ R1 < R2 < 0.8 Rw. Therefore, the difference between the distance between wafer 100 and base 13 at temperature measuring position M1 and the distance between wafer 100 and base 13 at temperature measuring position M2 can be smaller than in the comparative example, regardless of the residual stress (warping direction and warping amount) of wafer 100. Furthermore, at temperature measuring position M2, the variation in the distance between wafer 100 and base 13 caused by the warping direction of wafer 100 can be smaller than in the comparative example. Therefore, the variation in temperature control (heater output) of each wafer 100 can be smaller than in the comparative example. Therefore, the deviation in temperature adjustment control of the first heater 14 and the second heater 15 caused by the residual stress of wafer 100 can be suppressed. That is, the reproducibility of temperature control between wafers can be higher than in the comparative example.

[0101] 3.2 Effects of this implementation method According to the structure of this embodiment, similarly to the first embodiment, the temperature measuring position M2 of the second radiation thermometer 51 can be set to R1 < R2 < 0.8 Rw. This suppresses fluctuations in the heater output between wafers caused by residual stress in the wafer 100. Therefore, it suppresses the decrease in the reproducibility of temperature control between wafers in the semiconductor manufacturing apparatus 1. Furthermore, by setting the temperature measuring position M2 of the second radiation thermometer 51 to R1 < R2 < 0.8 Rw, the deviation in the distance between the wafer 100 and the base 13 at temperature measuring positions M1 and M2 can be reduced. This reduces the temperature deviation within the wafer surface. Therefore, it suppresses the generation of deformation, strain, crystal defects, etc., in the wafer 100.

[0102] If the wafer 100 has a larger diameter, there is a tendency for increased warpage. Therefore, this effect is effective for large-diameter wafers 100.

[0103] 4. Other Several embodiments of the present invention have been described, but these embodiments are provided by way of example and are not intended to limit the scope of the invention. These new embodiments can be implemented in various other ways, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their variations are included in the scope and spirit of the invention, and are included in the scope of the invention as described in the claims and its equivalents.

Claims

1. A semiconductor manufacturing apparatus, comprising: chamber; A base, disposed within the cavity, is capable of mounting a wafer on its upper surface; A rotating body is disposed within the cavity, causing the base to rotate about a predetermined central axis; A first radiation thermometer is positioned above the chamber to measure the temperature at a first temperature measurement position of the wafer mounted on the base. A second radiation thermometer is disposed adjacent to the first radiation thermometer above the chamber to measure the temperature at a second temperature measuring position of the wafer mounted on the base; A first heater and a second heater are disposed below the base. The first heater heats the central region of the wafer, and the second heater heats the outer region of the wafer. The control unit, based on temperature measurement data from the first and second radiation thermometers, controls the power applied to the first and second heaters respectively, to adjust the first and second temperature measurement positions of the wafer to a predetermined temperature. The second distance from the central axis to the second temperature measurement position is longer than the first distance from the central axis to the first temperature measurement position and shorter than 0.8 times the radius of the wafer.

2. The semiconductor manufacturing apparatus according to claim 1, wherein, If the first distance is shorter than 0.5 times the radius of the wafer, the second distance is longer than 0.5 times the radius of the wafer and shorter than 0.8 times the radius of the wafer.

3. The semiconductor manufacturing apparatus according to claim 1, wherein, The first heater is positioned below the base and is controlled based on the temperature measurement result of the first radiation thermometer or a preset heater output. The second heater is disposed below the base in a manner that surrounds the first heater, and has an annular shape, and is controlled based on the temperature measurement result of the second radiation thermometer or a preset heater output.

4. The semiconductor manufacturing apparatus according to claim 1, wherein, The center of the wafer is located on the central axis.

5. The semiconductor manufacturing apparatus according to claim 1, wherein, It also includes a gas supply unit located at the upper part of the chamber. The gas supply unit includes: The temperature measurement window is located on the upper surface; A rectifier plate is used to rectify the flow of gas; and Multiple nozzles pass through the fairing plate. The first radiation thermometer and the second radiation thermometer receive thermal radiation emitted from the surface of the wafer through the temperature measuring window and one of the plurality of nozzles, respectively.

6. The semiconductor manufacturing apparatus according to claim 1, wherein, The first heater is located below the base and has a circular plate shape. The second heater is disposed below the base in a manner that surrounds the first heater, and has an annular shape with an inner diameter 0.8 times the radius of the wafer. The first distance from the central axis to the first temperature measuring position is shorter than the radius of the first heater. The second distance from the central axis to the second temperature measuring position is longer than the first distance and shorter than the inner diameter of the second heater.

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