Ar diffraction optical waveguide and method of manufacturing the same
By using 12-inch silicon carbide wafers and ion implantation lift-off technology to fabricate silicon carbide films and nano-diffraction gratings on transparent substrates, the high cost and low efficiency problems of AR diffraction waveguides have been solved, and low-cost manufacturing of AR diffraction waveguides with high refractive index and large field of view has been achieved.
CN122239211APending Publication Date: 2026-06-19PN JUNCTION SEMICON (HANGZHOU) CO LTD +1
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- PN JUNCTION SEMICON (HANGZHOU) CO LTD
- Filing Date
- 2026-05-08
- Publication Date
- 2026-06-19
AI Technical Summary
Technical Problem
Existing AR diffractive waveguide materials are expensive, have low processing efficiency, and it is difficult to balance transparency and weight.
Method used
Using a 12-inch silicon carbide wafer as a reusable donor, a large-size silicon carbide film was prepared on a transparent substrate by ion implantation and lift-off, and a nano-diffraction grating was fabricated. Multiple silicon carbide films were prepared by repeated lift-off using a 12-inch silicon-based/glass-based micro/nano fabrication line.
Benefits of technology
It significantly reduces material costs, improves processing efficiency, and yields AR diffractive waveguides with high refractive index and large field of view, which are easy to process.
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Smart Images
Figure CN122239211A_ABST
Abstract
This invention discloses an AR diffractive waveguide and its manufacturing method, belonging to the field of AR device technology. The manufacturing method of the AR diffractive waveguide includes providing a 12-inch silicon carbide wafer; performing hydrogen ion implantation on a first side of the silicon carbide wafer to form an ion-implanted damage layer at a predetermined depth; bonding the first side of the silicon carbide wafer to a first transparent substrate; peeling off the silicon carbide wafer along the ion-implanted damage layer to form a silicon carbide film on the first transparent substrate; and flipping the first transparent substrate to form a nano-diffraction grating on the side of the silicon carbide film facing away from the first transparent substrate. By providing a 12-inch silicon carbide wafer as a reusable donor, using an ion-implantation peel-off method to prepare a large-size silicon carbide film on a first transparent substrate, and processing the nano-diffraction grating, multiple silicon carbide films can be prepared through repeated peel-offs, significantly reducing manufacturing costs.
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