Method for controlling etching depth by localized heating

Abstract

An embodiment of the present disclosure relates to a method for controlling etch depth by providing localized heating across a substrate. The method for controlling temperature across a substrate can include individually controlling a plurality of heating pixels disposed on a dielectric portion of a substrate support assembly. The plurality of heating pixels provide a temperature distribution on a first surface of a substrate disposed on a support surface of the dielectric portion. The temperature distribution corresponds to a plurality of portions of at least one grid on a second surface of the substrate to be exposed to an ion beam. Further, the temperature can be controlled by individually controlling light emitting diodes (LEDs) of an LED array. The substrate is exposed to the ion beam to form a plurality of fins on the at least one grid. The at least one grid has a depth distribution corresponding to the temperature distribution.

Description

【Technical Field】 【0001】 【0001】Embodiments of the present disclosure generally relate to methods and systems for controlling etching depth by local heating. 【Background Art】 【0002】 【0002】Virtual reality is generally considered to be a computer-generated simulated environment in which a user appears to be physically present therein. A virtual reality experience can be generated in 3D and viewed with a head-mounted display (HMD) such as glasses or other wearable display devices equipped with a near-eye display panel as a lens for displaying a virtual reality environment that replaces the actual environment. 【0003】 【0003】However, augmented reality enables the experience that a user can still see the surrounding environment through the display lenses of glasses or other HMD devices, but can also see an image of a virtual object that appears as part of the generated environment for display. Augmented reality can include any type of input, such as virtual images, graphics, videos, as well as audio input and tactile input, that enhances or extends the environment experienced by the user. As a newly emerging technology, augmented reality has many challenges and design constraints. 【0004】 【0004】To provide a user with an augmented reality experience, a virtual image is overlaid on the surrounding environment. A waveguide is used to assist in the overlay of the image. The generated light propagates through the waveguide until the light exits the waveguide and is overlaid on the surrounding environment. Optical devices generally require multiple waveguides with different physical properties on the same substrate to guide light of different wavelengths. 【0005】

[0005] One of the challenges of augmented reality is that fabricating waveguides on a substrate is a difficult process. It is often difficult to control material properties such as the substrate temperature that affect the depth profile of the grid placed on the substrate. If the temperature is not controlled across the entire substrate, the depth profile of the grid will not be controlled and will not be uniform across the entire substrate. 【0006】

[0006] Therefore, a method is needed for controlling the etching depth by providing localized heating across the entire substrate. [Overview of the project] 【0007】

[0007] In one embodiment, a method for controlling the temperature across different regions of a substrate includes individually controlling a plurality of heating pixels located on a dielectric portion of a substrate support assembly, wherein the plurality of heating pixels provide a temperature distribution on a first surface of the substrate located on the support surface of the dielectric portion, the temperature distribution corresponding to a plurality of portions of at least one grid on a second surface of the substrate to be exposed to an ion beam, and exposing the substrate to an ion beam to form a plurality of fins on at least one grid, the at least one grid having a depth distribution corresponding to the temperature distribution, wherein the temperature distribution includes a first temperature in the first portion of the plurality of portions of at least one grid and a second temperature in the second portion of the plurality of portions of at least one grid, the first temperature being different from the second temperature. 【0008】

[0008] In another embodiment, a method for controlling temperature across different regions of a substrate includes individually controlling the light-emitting diodes (LEDs) of an LED array to provide a temperature distribution on the surface of the substrate, the temperature distribution corresponding to a plurality of portions of at least one grid on the surface of the substrate to be exposed to an ion beam, and exposing the substrate to an ion beam to form a plurality of fins on at least one grid, the at least one grid having a depth distribution corresponding to the temperature distribution, the temperature distribution including a first temperature in a first portion of the plurality of portions of at least one grid and a second temperature in a second portion of the plurality of portions of at least one grid, the first temperature being different from the second temperature. 【0009】

[0009] In another embodiment, a method for controlling temperature across different regions of a substrate includes individually controlling a plurality of heating pixels located on a dielectric portion of a substrate support assembly, wherein the plurality of heating pixels provide a temperature distribution to a first surface of the substrate located on the support surface of the dielectric portion, the temperature distribution corresponding to a plurality of portions of at least one grid on a second surface of the substrate to be exposed to an ion beam; individually controlling light-emitting diodes (LEDs) of an LED array to provide a temperature distribution to a second surface of the substrate, wherein the temperature distribution corresponds to a plurality of portions of at least one grid on the surface of the substrate to be exposed to an ion beam; and exposing the substrate to an ion beam to form a plurality of fins on at least one grid, the at least one grid having a depth distribution corresponding to the temperature distribution, wherein the temperature distribution includes a first temperature in the first portion of the plurality of portions of at least one grid and a second temperature in the second portion of the plurality of portions of at least one grid, the first temperature being different from the second temperature. 【0010】

[0010] In order that the above-mentioned features of the present disclosure may be understood in detail, a more specific description of the present disclosure, which has been briefly summarized above, can be obtained by reference to embodiments, some of which are shown in the accompanying drawings. However, it should be noted that the accompanying drawings show only exemplary embodiments and should not be considered to limit the scope, and other equally valid embodiments may be permitted. [Brief explanation of the drawing] 【0011】 [Figure 1A] This is a perspective front view of a substrate having a plurality of lenses disposed thereon, according to at least one embodiment described herein. [Figure 1B] This is a perspective front view of a waveguide combiner according to at least one embodiment described herein. [Figure 2A] This is a schematic cross-sectional view of a system according to at least one embodiment described herein, including a substrate support assembly and a draw-out electrode having a light-emitting diode (LED) array. [Figure 2B] This is a perspective front view of a substrate support assembly of a system according to at least one embodiment described herein. [Figure 2C] This is a schematic diagram of an LED array of a system according to at least one embodiment described herein. [Figure 3] This is a flowchart of a method for controlling the temperature of different regions of a substrate according to at least one embodiment described herein. [Figure 4] This is a schematic cross-sectional view of a substrate and a grid according to at least one embodiment described herein. [Modes for carrying out the invention] 【0012】 【0018】 For ease of understanding, the same reference numerals are used to indicate identical elements common to the figures, where possible. Elements and features of one embodiment are intended to be usefully incorporated into other embodiments without further detail. 【0013】 【0019】 The following description includes numerous specific details to provide a more complete understanding of the embodiments of the Disclosure. However, it will be apparent to those skilled in the art that one or more embodiments of the Disclosure may be carried out without one or more of these specific details. In other examples, well-known features are omitted to avoid obscuring one or more embodiments of the Disclosure. 【0014】 【0020】 Embodiments of this disclosure generally relate to methods for controlling etching depth by providing localized heating across a substrate. Methods for controlling temperature across different regions of a substrate may include individually controlling a plurality of heating pixels located on a dielectric portion of a substrate support assembly. The plurality of heating pixels provide a temperature distribution on a first surface of the substrate located on the support surface of the dielectric portion. The temperature distribution corresponds to a plurality of portions of at least one grid on a second surface of the substrate to be exposed to an ion beam. Furthermore, temperature can be controlled by individually controlling the light-emitting diodes (LEDs) of an LED array. The substrate is exposed to an ion beam to form a plurality of fins on at least one grid. The at least one grid has a depth distribution corresponding to the temperature distribution. 【0015】 【0021】 Figure 1A shows a perspective front view of a substrate 101 according to at least one embodiment. The substrate 101 is configured for use in optical devices. The substrate 101 can be any substrate used in the art. For example, the substrate 101 includes a semiconductor material, such as a III-V semiconductor such as silicon (Si), germanium (Ge), silicon-germanium (SiGe), and / or gallium arsenide (GaAs). In another example, the substrate 101 includes a transparent material, such as glass and / or plastic. The substrate 101 may have any number of insulating layers, semiconductor layers, or metallic layers thereon. 【0016】 【0022】As shown, the substrate 101 includes a plurality of lenses 103 arranged on a surface 134. The plurality of lenses 103 are configured to focus light depending on the application of the substrate 101. The plurality of lenses 103 are arranged on the substrate 101 in a row and column grid. It is intended that other suitable arrangements of the plurality of lenses 103 on the substrate 101 can be carried out according to the embodiments described herein. After the method for manufacturing the waveguide combiner described herein, each lens of the plurality of lenses 103 includes the waveguide combiner 100. 【0017】 【0023】 Figure 1B shows a perspective front view of a waveguide combiner 100 according to one embodiment. The waveguide combiner 100 is configured to guide electromagnetic radiation (e.g., light). As shown, the waveguide combiner 100 comprises multiple regions, each containing multiple gratings 102. The multiple gratings 102 are configured to receive an incident beam of light (virtual image) of a certain intensity from a microdisplay. Each grating of the multiple gratings 102 divides the incident beam into multiple modes, with each beam having one mode. The zero-order mode (T0) beam is refracted back or lost within the waveguide combiner 100. The positive first-order mode (T1) beam undergoes total internal reflection (TIR) ​​all the way through the waveguide combiner 100 to the multiple gratings 102. The negative first-order mode (T-1) beam propagates within the waveguide combiner 100 in the opposite direction to the T1 beam. The T-1 beam undergoes continuous TIR (Transient Infrared) through waveguide combiner 100.

[0018] 【0024】Figure 2A is a schematic cross-sectional view of a system 200 according to at least one embodiment of this specification. The system 200 includes an ion beam chamber 202 housing an ion beam source 204 and a substrate support assembly 203 supporting a substrate 101. The substrate support assembly 203 is a pixelated substrate support assembly. The substrate support assembly 203 generally includes a cooling base 220 and a substrate support member, such as an electrostatic chuck 221. The substrate support assembly 203 can be removably coupled to a support member 226. The substrate support assembly 203 can be periodically removed from the support member 226 to allow for maintenance of the substrate support assembly 203. The electrostatic chuck 221 generally includes a chucking electrode 218 embedded in a dielectric portion 222. The chucking electrode 218 may be configured as a unipolar or bipolar electrode or other suitable arrangement. The chucking electrode 218 is coupled to a chucking power supply 230 that supplies RF or DC power to electrostatically fix the substrate 101 to the upper surface of the dielectric portion 222. The dielectric portion 222 can be manufactured from a ceramic material such as AlN, or from a polymer such as polyimide, polyetheretherketone, or polyaryletherketone.

[0019] 【0025】The ion beam source 204 is configured to generate an ion beam 206, such as a ribbon beam or a spot beam. The ion beam chamber 202 is configured to direct the ion beam 206 at an angle α optimized with respect to the normal 223 of the surface of the substrate 101. The substrate support assembly 203 includes an electrostatic chuck 221, and the electrostatic chuck 221 is connected to a cooling base 220. The cooling base 220 is connected to a support member 226. In some embodiments, an actuator 208 is configured to tilt the support member 226 such that the substrate 101 is positioned at an inclination angle β with respect to the z-axis of the ion beam chamber 202. In another embodiment, which can be combined with other embodiments described herein, the actuator 208 rotates the substrate 101 about the x-axis of the support member 226 during operation. To form a lattice with respect to the normal 223 of the surface, the ion beam source 204 generates an ion beam 206, and the ion beam chamber 202 directs the ion beam 206 at the optimized angle α towards the substrate 101. The actuator 208 positions the support member 226 such that the ion beam 206 contacts the lattice material 402 (FIG. 4) at a desired portion of the lattice material 402 at an ion beam angle and forms a plurality of fins 403 at a plurality of depths 401 (FIG. 4). 【0020】 【0026】 The system 200 also includes a draw electrode 236 having a light emitting diode (LED) array 205. As shown in FIG. 2C, which is a schematic view of the LED array of the system 200, the LED array 205 is composed of a plurality of individual LEDs 207 arranged in an array of rows and columns. Any number of rows and columns of LEDs 207 can be used. The controller 250 is operable to individually control each of the LEDs 207 of the LED array 205 such that a temperature distribution is provided to the surface 134 of the substrate 101 facing the ion beam 206 corresponding to at least one of the plurality of lattices 102. 【0021】 【0027】The substrate support assembly 203 includes a controller 214 operable to communicate with a power supply 212, an actuator 208, and a controller 250 of the LED array 205. The controller 214 and the controller 250 are operable to control aspects of the substrate support assembly 203 during processing. The electrostatic chuck 221 is shown in FIGS. 2A and 2B and includes a plurality of heating pixels 216 disposed within a dielectric portion 222 and coupled to a power supply 228. The controller 214 is operable to individually control each of the heating pixels 216 such that a temperature profile is provided to the surface 132 of the substrate 101 held on the support surface 225 of the dielectric portion 222 corresponding to at least one of the plurality of grids 102. In one embodiment, the heating pixels 216 include a plurality of laterally separated heating zones, and the controller 214 enables one zone of the heating pixels 216 to be preferentially heated relative to one or more other zones. The electrostatic chuck 221 may also include one or more thermocouples (not shown) for providing temperature feedback information to the controller 214 to control the power applied to the heating pixels 216 by the power supply 228 and, as further described below, to operate the cooling base 220. 【0022】 【0028】 The temperature-controlled cooling base 220 is coupled to a heat transfer fluid source 232. The heat transfer fluid source 232 supplies a heat transfer fluid such as a liquid, a gas, or a combination thereof, which circulates independently near the plurality of heating pixels 216, thereby enabling local control of heat transfer between the electrostatic chuck 221 and the cooling base 220 and ultimately control of the lateral temperature profile of the substrate 101. A fluid distributor 234 is fluidly coupled between the outlet of the heat transfer fluid source 232 and the temperature-controlled cooling base 220. The fluid distributor 234 operates to control the amount of heat transfer fluid supplied to the heating pixels 216. 【0023】 【0029】As shown, the controller 214 includes a central processing unit (CPU) 215, memory 217, and support circuitry (or I / O) 219. The CPU 215 is one of any form of computer processor used in an industrial environment to control various processes and hardware (e.g., pattern generators, motors, and other hardware) and to monitor processes (e.g., processing time and board position or location). The memory 217 is connected to the CPU 215 and is one or more readily available memories such as random access memory (RAM), read-only memory (ROM), floppy disks, hard disks, or any other form of local or remote digital storage. Software instructions and data may be coded and stored in the memory 217 to instruct the CPU 215. The support circuitry 219 is also connected to the CPU 215 to support the CPU in a conventional manner. The support circuitry 219 includes conventional caches, power supplies, clock circuits, input / output circuits, subsystems, etc.

[0024] 【0030】As shown, the controller 250 includes a central processing unit (CPU) 291, memory 293, and support circuitry (or I / O) 295. The CPU 291 is one of any form of computer processor used in an industrial environment to control various processes and hardware (e.g., pattern generators, motors, and other hardware) and to monitor processes (e.g., processing time and board position or location). The memory 293 is connected to the CPU 291 and is one or more readily available memories such as random access memory (RAM), read-only memory (ROM), floppy disks, hard disks, or any other form of local or remote digital storage. Software instructions and data may be coded and stored in the memory 293 to instruct the CPU 291. The support circuitry 295 is also connected to the CPU 291 to support the CPU in a conventional manner. The support circuitry 295 includes conventional caches, power supplies, clock circuits, input / output circuits, subsystems, etc.

[0025] 【0031】 Figure 3 is a flowchart of method 300 for controlling the temperature of different regions of the substrate 101. In these embodiments, method 300 is performed using the systems and devices described in Figures 1 to 2C, but is not limited to these systems and devices and may be performed using other similar systems and devices.

[0026] 【0032】 In block 302, multiple heating pixels 216 located within the dielectric portion 222 of the substrate support assembly 203 are individually controlled. The multiple heating pixels 216 provide a temperature distribution to the surface 132 of the substrate 101 placed on the support surface 225 of the dielectric portion 222. The temperature distribution corresponds to multiple portions 406, 408 of the grid 102 on the surface 134 of the substrate 101 to be exposed to the ion beam 206 (Figure 4).

[0027] 【0033】In block 304, which can be performed independently or in addition to block 302, the LEDs 207 of the LED array 205 are individually controlled to provide a temperature distribution on the surface 134 of the substrate 101. The temperature distribution corresponds to several portions 406, 408 of the grid 102 on the surface 134 of the substrate 101 that are to be exposed to the ion beam 206 (Figure 4).

[0028] 【0034】 In block 306, the substrate 101 is exposed to an ion beam 206 to form a plurality of fins 403 on the grid 102, and the grid 102 has a plurality of depths 401 corresponding to the temperature distribution (Figure 4). The temperature distribution includes a first temperature at a first portion 406 of the plurality of portions 405 of the grid 102 and a second temperature at a second portion 408 of the plurality of portions 405 of the grid 102. In these embodiments, the first temperature is different from the second temperature.

[0029] 【0035】Figure 4 is a schematic cross-sectional view of the substrate 101 and grid 102 before, during, and after Method 300 according to at least one embodiment described herein. In the embodiment described herein, when an ion beam 206 is directed onto the substrate 101, the ion beam 206 forms a plurality of fins 403 corresponding to a plurality of depths 401 within a grid material 402 placed on a lens 103. Figure 4 shows the ion beam 206 forming a plurality of fins 403 within the grid material 402, but in other embodiments, the plurality of fins 403 can be formed directly on the surface 134 of the substrate 101. The grid material 402 is exposed by a patterned hard mask 404. The plurality of depths 401 of each fin of the plurality of fins 403 can be varied based on the temperature of the substrate 101. As discussed above, the temperature of the substrate 101 can be controlled by a plurality of heating pixels 216 and / or by an LED array 205. As shown in Figure 4, the grid 102 can be divided into a plurality of sections 405. To control multiple depths 401, the temperature can be controlled in each of the multiple sections 405. For example, a first temperature can be applied to the first section 406 of the multiple sections 405 of the grid 102, and a second temperature can be applied to the second section 408 of the multiple sections 405 of the grid 102. Two sections are shown in Figure 4, but any number of multiple sections 405 can be used, and any number of different temperatures can be applied to each of the multiple sections 405.

[0030] 【0036】In some embodiments, the lattice material 402 includes materials comprising silicon oxycarbide (SiOC), titanium dioxide (TiO2), vanadium(IV) oxide (VOx), aluminum oxide (Al2O3), indium tin oxide (ITO), zinc oxide (ZnO), tantalum pentoxide (Ta2O5), silicon nitride (Si3N4), titanium nitride (TiN), and / or zirconium dioxide (ZrO2). The lattice material 402 can have a refractive index between about 1.5 and about 2.65. In some embodiments, the patterned hard mask 404 is an opaque hard mask that is removed after the waveguide combiner is formed. For example, the opaque hard mask may include reflective materials such as chromium (Cr) or silver (Ag). In another embodiment, the patterned hard mask 404 is a transparent hard mask.

[0031] 【0037】 While the above is directed toward embodiments of the present invention, other further embodiments of the present invention can be devised without departing from its basic scope, which is determined by the following claims.

Claims

[Claim 1] A method for controlling temperature across different regions of a substrate, The method involves individually controlling a plurality of heating pixels disposed within a dielectric portion of a substrate support assembly, wherein the plurality of heating pixels provide a temperature distribution to a first surface of the substrate disposed on the support surface of the dielectric portion, the temperature distribution corresponds to a plurality of portions of at least one grid on a second surface of the substrate exposed to an ion beam, and a chucking electrode is disposed within the dielectric portion, with the plurality of heating pixels positioned between the first surface of the substrate and the chucking electrode. The substrate is exposed to the ion beam to form a plurality of fins on the at least one grid, wherein the plurality of fins are formed such that the at least one grid has a depth distribution corresponding to the temperature distribution. Includes, The temperature distribution includes a first temperature in a first portion of the plurality of portions of the at least one grid and a second temperature in a second portion of the plurality of portions of the at least one grid. A method wherein the first temperature is different from the second temperature. [Claim 2] The method according to claim 1, wherein at least one lens is disposed on the substrate. [Claim 3] The method according to claim 2, wherein the at least one grid comprises a grid material. [Claim 4] The method according to claim 3, wherein the grid material is exposed by a patterned hard mask. [Claim 5] The method according to claim 1, wherein the ion beam is configured to be directed toward the substrate at an optimized angle with respect to the surface normal of the substrate. [Claim 6] A method for controlling the temperature across different regions of a substrate, The light-emitting diodes (LEDs) of an LED array are individually controlled to radiate light onto a second surface of the substrate opposite to a first surface of the substrate, which is positioned on a support surface of a substrate support assembly, thereby providing a temperature distribution on the second surface of the substrate, wherein the LEDs are individually controlled such that the temperature distribution corresponds to a plurality of portions of at least one grid on the second surface of the substrate exposed to an ion beam. The second surface of the substrate is exposed to the ion beam to form a plurality of fins on the at least one grid, wherein the plurality of fins are formed such that the at least one grid has a depth distribution corresponding to the temperature distribution. Includes, The temperature distribution includes a first temperature in a first portion of the plurality of portions of the at least one grid and a second temperature in a second portion of the plurality of portions of the at least one grid. A method wherein the first temperature is different from the second temperature. [Claim 7] The method according to claim 6, wherein at least one lens is disposed on the substrate. [Claim 8] The method according to claim 7, wherein the at least one grid comprises a grid material. [Claim 9] The method according to claim 8, wherein the grid material is exposed by a patterned hard mask. [Claim 10] A method for controlling the temperature across different regions of a substrate, The method involves individually controlling a plurality of heating pixels arranged within a dielectric portion of a substrate support assembly, wherein the plurality of heating pixels provide a first temperature distribution to a first surface of the substrate arranged on the support surface of the dielectric portion, and the plurality of heating pixels are individually controlled such that the first temperature distribution corresponds to a plurality of portions of at least one grid on a second surface of the substrate exposed to an ion beam. The light-emitting diodes (LEDs) of an LED array are individually controlled to emit light onto the second surface of the substrate and provide a second temperature distribution on the second surface of the substrate, wherein the LEDs are individually controlled such that the second temperature distribution corresponds to a plurality of portions of the at least one grid on the second surface of the substrate exposed to the ion beam. The substrate is exposed to the ion beam to form a plurality of fins on the at least one grid, wherein the plurality of fins are formed such that the at least one grid has depth distributions corresponding to the first temperature distribution and the second temperature distribution. Includes, The first temperature distribution and the second temperature distribution include a first temperature in the first part of the plurality of parts of the at least one grid and a second temperature in the second part of the plurality of parts of the at least one grid, A method wherein the first temperature is different from the second temperature. [Claim 11] The method according to claim 10, wherein at least one lens is disposed on the substrate. [Claim 12] The method according to claim 11, wherein the at least one grid comprises a grid material. [Claim 13] The method according to claim 12, wherein the grid material is exposed by a patterned hard mask. [Claim 14] The method according to claim 10, wherein the ion beam is configured to be directed toward the substrate at an optimized angle with respect to the surface normal of the substrate. [Claim 15] The method according to claim 10, further comprising tilting the substrate with an actuator.

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