Radio frequency switch driver

Abstract

This disclosure relates to radio frequency (RF) switch drivers. In RF switch drivers, where circuitry significantly improves RF performance through the use of high control voltages, to address potential performance degradation issues, transistor performance can be prevented by connecting a resistor in parallel between the drain and source of the transistors to ensure equal voltage distribution among the series-connected transistors. This disclosure provides stability maintenance, transistor performance protection, improved electrical characteristics, reduced leakage current, voltage stabilization, power loss mitigation, reduced electromagnetic interference (EMI), and output node stability for switch driver circuits. This disclosure offers the following advantages: by assisting transistor operation through a resistor connected in parallel between the drain and source of the transistors, it enhances electrical stability, reduces electromagnetic interference (EMI), and improves the quality of the output signal.

Description

Technical Field

[0001] This disclosure relates to radio frequency switch drivers, and more specifically, to radio frequency switch drivers that, in the case of circuits that significantly improve RF performance by using high control voltages, prevent transistor performance degradation by ensuring equal voltage distribution between series-connected transistors in order to address potential performance degradation issues. Background Technology

[0002] In recent years, in order to expand the data bandwidth of communication networks, advanced communication systems using new methods and frequencies have been developed, and in order to handle these methods and frequencies in a single terminal, many RF switches are being used to separate and process each frequency band and communication method in the front end connected to the antenna.

[0003] Although silicon-on-insulator (SOI) complementary metal-oxide-semiconductor (CMOS) radio frequency (RF) switches are widely used for such RF switches due to their various advantages, it may be advantageous to use higher control voltages to achieve higher power drive capability and lower insertion loss. SOI CMOS RF switches are powered by CMOS switch drivers.

[0004] CMOS switch drivers suffer from the following problem: when the control voltage level changes instantaneously, the transistor reacts too sensitively, leading to a permanent degradation in transistor performance.

[0005] [Related Technical Documents]

[0006] [Patent Literature]

[0007] (Patent Document 1) Korean Patent Registration No. 10-1075690 Summary of the Invention

[0008] To address these issues, this disclosure aims to provide a radio frequency (RF) switch driver that prevents transistor performance degradation by connecting a resistor in parallel between the drain and source of the transistor to create an equal voltage distribution between the series-connected transistors, thereby resolving the performance degradation problem of switch drivers that may occur in circuits where RF performance is significantly improved by using high control voltages.

[0009] In the radio frequency switch driver that achieves the above-mentioned objectives according to the features of this disclosure, a first P-channel field-effect transistor (PFET) and a second PFET can be connected in series, a third N-channel field-effect transistor (NFET) and a fourth NFET can be connected in series, and the second drain of the second PFET and the third drain of the third NFET can be connected. Then, an output signal can be output to a connection point where the second drain of the second PFET and the third drain of the third NFET are connected. Each of the first PFET, the second PFET, the third NFET and the fourth NFET can have a first resistor, a second resistor, a third resistor and a fourth resistor respectively connected between their source and drain.

[0010] In an RF switch driver, the first drain of a first PFET can be connected in series with the second source of a second PFET, and the third source of a third NFET can be connected in series with the fourth drain of a fourth NFET. An output signal can be output to a connection point where the second drain of the second PFET and the third drain of the third NFET are connected. The first PFET may have a first resistor connected between its first source and first drain, the second PFET may have a second resistor connected between its second source and second drain, the third NFET may have a third resistor connected between its third drain and third source, and the fourth NFET may have a fourth resistor connected between its fourth drain and fourth source.

[0011] With the above configuration, this disclosure has the following effects: by connecting a resistor in parallel between the drain and source of the transistor, an equal voltage distribution occurs between the series-connected transistors, thereby preventing transistor performance degradation and improving the stability of the switch driver.

[0012] This disclosure can provide stability maintenance, transistor performance protection, electrical characteristic improvement, leakage current reduction, voltage stabilization, power loss mitigation, electromagnetic interference reduction, and output node stability for switch driver circuits.

[0013] This disclosure has the following effects: by connecting a resistor in parallel between the drain and source of the transistor to assist transistor operation, electrical stability is enhanced, electromagnetic interference (EMI) is reduced, and the quality of the output signal is improved. Attached Figure Description

[0014] Figure 1 This is a schematic diagram illustrating the configuration of a radio frequency switch driver according to an embodiment of the present disclosure.

[0015] Figure 2 This is a schematic diagram illustrating the voltage of each node of the switching driver when the external control voltage Vsw is high, according to an embodiment of the present disclosure.

[0016] Figure 3 This is a schematic diagram illustrating the voltage of each node of the switching driver when the external control voltage Vsw is low, according to an embodiment of the present disclosure.

[0017] Figure 4 This is a schematic diagram illustrating an example of using a switch driver according to relevant technologies.

[0018] Figure 5 This is a schematic diagram illustrating an example of using a switch driver according to an embodiment of the present disclosure. Detailed Implementation

[0019] The embodiments disclosed in this specification will now be described in detail with reference to the accompanying drawings. Regardless of the reference numerals, identical or similar constituent elements will be indicated by the same reference numerals, and redundant descriptions will be omitted. Furthermore, in describing the embodiments disclosed in this specification, detailed descriptions of related known technologies will be omitted if it is determined that such detailed descriptions might obscure the essential points of the embodiments disclosed in this specification.

[0020] Although ordinal terms such as first, second, etc., can be used to describe various constituent elements, the constituent elements are not limited by these terms. The terms mentioned above are only used to distinguish one constituent element from another.

[0021] Unless the context clearly indicates otherwise, singular expressions also include plural expressions.

[0022] In this application, each step described may be performed regardless of the listed order, unless a specific causal relationship requires them to be performed in the listed order.

[0023] In this application, it should be understood that terms such as “comprising,” “including,” or “having” are intended to specify the presence of features, quantities, steps, operations, constituent elements, parts, or combinations thereof described in the specification, but do not preclude the presence or addition of one or more other features, quantities, steps, operations, constituent elements, parts, or combinations thereof.

[0024] A circuit is needed to prevent the voltage between each drain and each source of the output transistor in a complementary metal-oxide-semiconductor (CMOS) switch driver from becoming excessively high. For this purpose, equal voltage distribution between the drain and source of the series-connected output transistors is crucial. This disclosure allows a resistor with a large resistance value to be connected in parallel between the drain and source of each series-connected output transistor, such that even if a transient change in control voltage occurs, the change is evenly distributed across the two transistors, thereby minimizing the resulting performance degradation.

[0025] The radio frequency switch driver of this disclosure will now be described with reference to the accompanying drawings.

[0026] Figure 1 This is a schematic diagram illustrating the configuration of a radio frequency switch driver according to an embodiment of the present disclosure. Figure 2 This is a schematic diagram illustrating the voltage of each node of the switching driver when the external control voltage Vsw is high, according to an embodiment of the present disclosure. Figure 3 This is a schematic diagram illustrating the voltage of each node of the switching driver when the external control voltage Vsw is low, according to an embodiment of the present disclosure.

[0027] N-channel field-effect transistors (NFETs) and P-channel field-effect transistors (PFETs) can be switching and amplifying devices designed based on N-type semiconductors and P-type semiconductors, respectively.

[0028] In an NFET, current flows from the source (S) to the drain (D), and the current can be controlled by the voltage applied to the gate (G). In an NFET, when a positive voltage satisfying Vgs > 0 is applied to the gate, a channel is formed, allowing current to flow. In an NFET, when the drain and source voltages Vds satisfy Vds > 0, electrons flow from the source to the drain through the N-type channel.

[0029] In a PFET, current flows from the drain (D) to the source (S), and the current can be controlled by the voltage applied to the gate (G). In a PFET, when a negative voltage satisfying Vgs < 0 is applied to the gate, a channel is formed, allowing current to flow. In a PFET, when the drain and source voltages Vds satisfy Vds < 0, holes flow from the source to the drain through the P-type channel.

[0030] When a positive voltage is applied to the gate, the NFET turns on; when a negative voltage is applied to the gate, the PFET turns on. By using these characteristics, PFETs and NFETs can be used in a complementary manner to achieve efficient and low-power operation in CMOS circuits.

[0031] The first PFET 110 may include a first gate 111, a first source 112 from which current flows out, and a first drain 113 from which current flows in, which are controlled by applying a voltage. A positive control voltage is connected to the first source 112 of the first PFET 110.

[0032] The second PFET 120 may include a second gate 121 that controls the channel by applying a voltage, a second source 122 from which current flows out, and a second drain 123 into which current flows in. The second source 122 of the second PFET 120 is connected to the first drain 113 of the first PFET 110.

[0033] The third NFET 130 may include a third gate 131 for controlling the channel by applying a voltage, a third drain 133 for current outflow, and a third source 132 for current inflow. The third source 133 of the third NFET 130 is connected to the second drain 123 of the second PFET 120.

[0034] The fourth NFET 140 may include a fourth gate 141 for controlling the channel by applying a voltage, a fourth drain 143 for current outflow, and a fourth source 142 for current inflow. The fourth drain 143 of the fourth NFET 140 is connected to the third source 132 of the third NFET 130. A negative control voltage is connected to the fourth source 142 of the fourth NFET 140.

[0035] The radio frequency switch driver 100 may have a first P-channel field-effect transistor (PFET) and a second PFET 120 connected in series, and a third N-channel field-effect transistor (NFET) and a fourth NFET 140 connected in series. The drains of the second PFET 120 and the third NFET 130 are connected, and then the output signal is output to a connection point where the second drain 123 of the second PFET 120 and the third drain 133 of the third NFET 130 are connected.

[0036] The first PFET 110, the second PFET 120, the third NFET 130 and the fourth NFET 140 may each have a first resistor 150, a second resistor 160, a third resistor 170 and a fourth resistor 180 connected separately between their source and drain.

[0037] By connecting resistors Rd with large resistance values ​​in parallel to the outputs of the first PFET 110, the second PFET 120, the third NFET 130, and the fourth NFET 140, transistor performance degradation can be prevented and the stability of the RF switch driver can be improved.

[0038] Control voltage is a voltage signal used to control specific operations (e.g., switching, signal modulation, output regulation, etc.) in a circuit or system. Control voltage can be used to determine the operating state (on, off) of a transistor.

[0039] The control voltage determines the state of the transistor to regulate the output signal, which can improve the efficiency and reliability of the circuit.

[0040] The first PFET 110 can be connected to a first resistor 150 with a large resistance value between the first source 112 and the first drain 113.

[0041] The second PFET 120 can be connected between the second source 122 and the second drain 123 by a second resistor 160 with a large resistance value.

[0042] The third NFET 130 can be connected to a third resistor 170 with a large resistance value between the third drain 133 and the third source 132.

[0043] The fourth NFET 140 can be connected to a fourth resistor 180 with a large resistance value between the fourth drain 143 and the fourth source 142.

[0044] The first resistor 150, the second resistor 160, the third resistor 170, and the fourth resistor 180 are each connected between the source and drain of the transistor (first PFET 110, second PFET 120, third NFET 130, and fourth NFET 140).

[0045] Therefore, the RF switch driver 100 is configured to have transistors (first PFET 110, second PFET 120, third NFET 130 and fourth NFET 140) and resistors connected in parallel.

[0046] Parallel connection structures can maintain the stability of the output node by providing a leakage current path through the resistor when the transistor is off.

[0047] Since the parallel structure has a sufficiently large resistance that can be ignored when the transistor is in the on state, it does not directly affect the operation of the transistor.

[0048] Because the RF switch driver 100 has resistors connected between the source and drain of each transistor, the resistors are not directly connected to each other. The resistors are connected in parallel with each transistor, and each transistor and resistor can operate independently throughout the circuit. This parallel connection improves transistor stability and reliability, suppresses leakage current, and enhances output signal quality.

[0049] The reason for connecting the first resistor 150, the second resistor 160, the third resistor 170 and the fourth resistor 180 is to maintain the stability of the switch driver circuit, protect the performance of the transistor, improve the electrical characteristics, reduce leakage current, stabilize the voltage, reduce power loss, reduce electromagnetic interference, and provide stability for the output node.

[0050] Leakage current is reduced because a small amount of current (leakage current) may flow between the source and drain when the transistor is off. A resistor with a large resistance value can provide a path between the source and drain to suppress leakage current and improve the quality of the output signal.

[0051] When the voltage between the source and drain of a transistor changes abruptly (e.g., during switching), voltage stabilization can be achieved by allowing a resistor to smooth the voltage transition. This can contribute to the protection and stable operation of the transistor.

[0052] If a high-value resistor is used, power loss mitigation can reduce power loss and suppress heat generation by mitigating current spikes that may occur during switching operations.

[0053] Electromagnetic interference (EMI) reduction can be achieved by providing resistors to absorb or suppress EMI generated during high-speed switching, thereby maintaining signal quality and circuit reliability.

[0054] Output node stabilization can reduce signal distortion and improve output signal quality by stabilizing the voltage of the output node.

[0055] The large resistance values ​​of the first resistor 150, the second resistor 160, the third resistor 170, and the fourth resistor 180 can vary depending on the circuit's operating conditions and the transistor's characteristics, but are typically measured in megaohms (MΩ). A range of 1MΩ to 10MΩ is commonly used for large resistor values, which effectively suppress leakage current while preventing excessive voltage drops.

[0056] Resistors of 10MΩ or higher are used in high-impedance circuits with very small current and are suitable for circuits with low switching frequency or where maintaining a fixed voltage is important.

[0057] The standard for selecting the resistor value is to adjust the resistor value based on the transistor's maximum allowable voltage and leakage current characteristics. Furthermore, higher resistor values ​​are suitable for high-speed switching circuits, and higher switching frequencies can be used to mitigate transient conditions.

[0058] Radio frequency (RF) circuits require resistors of several MΩ or higher to achieve EMI reduction and stability, while DC circuits typically have resistors of 1MΩ to 10MΩ.

[0059] When the first gate 111 has a negative voltage compared to the first source 112, the first PFET 110 is in the on state, and a positive control voltage is transmitted to the second PFET 120.

[0060] When the first PFET 110 is in the off state, it can block the positive control voltage.

[0061] Depending on the voltage transmitted from the first PFET 110, the second PFET 120 can be in an on or off state.

[0062] When the second PFET 120 is in the on state, it outputs a positive control voltage to the output signal.

[0063] When the fourth gate 141 has a positive voltage compared to the fourth source 142, the fourth NFET 140 is in the on state, and the negative control voltage is transferred to the third NFET 130.

[0064] When the fourth NFET 140 is in the off state, it can block the negative control voltage.

[0065] The third NFET 130 can be in an on or off state depending on the voltage transmitted from the fourth NFET 140.

[0066] When the third NFET 130 is in the ON state, it outputs a negative control voltage to the output signal.

[0067] When the first PFET 110 and the second PFET 120 are in the ON state and the third NFET 130 and the fourth NFET 140 are in the OFF state, the output signal indicates the positive control voltage.

[0068] When the third NFET 130 and the fourth NFET 140 are in the ON state and the first PFET 110 and the second PFET 120 are in the OFF state, the output signal indicates the negative control voltage.

[0069] The drive signal of the RF switch can be used as the output signal to select or block the RF signal path. The output signal can be generated at the junction between the second drain 123 of the second PFET 120 and the third drain 133 of the third NFET 130.

[0070] The RF switch driver 100 provides accurate and reliable switching using positive and negative control voltages, and can minimize power consumption through complementary operation of NFET and PFET.

[0071] The first PFET 110 can provide the first gate 111 with the voltage Vb of the first gate 111, and the fourth NFET 140 can provide the second gate voltage Va to the fourth gate 141.

[0072] The RF switch driver 100 can generate Va and Vb signals based on the external control voltage Vsw. When the external control voltage Vsw is high, Vb = 0V, Va = -Vc is applied, and the output signal Vc is output. At this time, a voltage of 2 × Vc is distributed between the drain and source of the series-connected third NFET 130 and fourth NFET 140.

[0073] When the external control voltage Vsw is low, Vb = Vc is satisfied, Va = 0V is applied, and the output signal -Vc is output. At this time, the voltage of 2 × Vc is distributed between the drain and source of the first PFET 110 and the second PFET 120 connected in series.

[0074] When the external control voltage Vsw is high, the gate voltage becomes Vb = 0V and Va = -Vc. When Vb = 0V, the voltage between the first gate 111 and the first source 112 of the first PFET 110 is a negative voltage -Vc, and the first PFET 110 is in the on state. When Va = -Vc, the voltage between the fourth gate 141 and the fourth source 142 of the fourth NFET 140 is 0V, and the fourth NFET 140 is in the off state.

[0075] In this case, the operation of the transistor is explained as follows.

[0076] When the voltage between the first gate 111 and the first source 112 is -Vc, the first PFET 110 is in the on state and transfers the positive voltage Vc from the first PFET 100 to the second PFET 120.

[0077] Because Vc is transmitted from the first PFET 110 and the output signal Vc is output, the second PFET 120 is in the on state.

[0078] The voltage between the third gate 131 and the third source 132 of the third NFET 130 is 0V, and the third NFET 130 is in the off state with no current flowing.

[0079] The voltage between the fourth gate 141 and the fourth source 142 of the fourth NFET 140 is 0V, and the fourth NFET 140 is in the off state with no current flowing.

[0080] When the external control voltage Vsw is low, the gate voltage becomes Vb = Vc and Va = 0V. When Vb = Vc, the voltage between the first gate 111 and the first source 112 of the first PFET 110 is 0V, and the first PFET 110 is in the off state. When Va = 0V, the voltage between the fourth gate 141 and the fourth source 142 of the fourth NFET 140 is -Vc, and the fourth NFET 140 is in the on state.

[0081] In this case, the operation of the transistor is explained as follows.

[0082] The voltage between the first gate 111 and the first source 112 of the first PFET 110 is 0V, and the first PFET 110 is in the off state and no current flows.

[0083] The second PFET 120 is in the off state because the first PFET 110 is in the off state and no current flows.

[0084] The voltage between the third gate 131 and the third source 132 of the third NFET 130 is -Vc, and the third NFET 130 is in the on state, and current flows from the third source 132 to the third drain 133, and voltage is transferred from the fourth NFET 140.

[0085] The fourth NFET 140 has a voltage of -Vc between its fourth gate 141 and fourth source 142, and the fourth NFET 140 is in the on state, transmitting a negative voltage -Vc as an output signal.

[0086] The first gate voltage Vb and the second gate voltage Va can determine the switching operation of the fourth NFET 140 and the first PFET 110, respectively. The first gate voltage Vb and the second gate voltage Va can determine the output signal Vc or -Vc based on the state of the fourth NFET 140 and the first PFET 110.

[0087] The first gate voltage Vb and the second gate voltage Va are generated based on the external control voltage Vsw, and the output signal can be switched to Vc or -Vc.

[0088] The first gate voltage Vb and the second gate voltage Va can provide appropriate voltage levels to ensure that the transistor operates in precise on and off states.

[0089] The first gate voltage Vb and the second gate voltage Va can be designed to minimize the power loss that occurs during transistor switching operation.

[0090] The first gate voltage Vb and the second gate voltage Va can be designed to minimize the power loss that occurs during transistor switching operation.

[0091] The first resistor 150, the second resistor 160, the third resistor 170, and the fourth resistor 180 are used as a parallel resistor Rd so that even when the transistor is in the off state, a small current flows through the resistor Rd, allowing the circuit to operate stably.

[0092] The first resistor 150, the second resistor 160, the third resistor 170, and the fourth resistor 180 are used to reduce leakage current and ensure the stability of the output signal, improve switching speed, assist in the charging and discharging of the gate to improve switching speed, and reduce electromagnetic interference (EMI). Parallel resistors can mitigate high-frequency noise in the circuit to improve stability.

[0093] An external control voltage Vsw can be used as an input signal to generate the gate voltages Vb and Va of the first PFET 110 and the fourth NFET 140 in the RF switch driver 100.

[0094] When the external control voltage Vsw is high, Vb = 0V and Va = -Vc are satisfied; when the external control current Vsw is low, Vb = Vc and Va = 0V are satisfied. The external control voltage Vsw can be a main control signal used to switch the output signal of the RF switch driver 100 to Vc or -Vc. The external control voltage Vsw is converted into Vb and Va through logic circuitry or a level shifter within the RF switch driver 100.

[0095] The external control voltage Vsw is not directly input to the gates of the transistors (first PFET 110, second PFET 120, third NFET 130, and fourth NFET 140). The RF switch driver 100 generates Vb and Va according to the state of the external control voltage Vsw. Vb and Va are respectively transmitted to the first gate 111 of the first PFET 110 and the fourth gate 141 of the fourth NFET 140 to control the operation of the transistors.

[0096] The RF switch driver 100 converts the control signal of the external control voltage Vsw into Vb or Va to determine the operating state of the transistors (first PFET 110, second PFET 120, third NFET 130 and fourth NFET 140), thereby converting the output signal into the desired voltage.

[0097] The RF switch driver 100 converts a single control signal of an external control voltage Vsw into a complementary signal Vb or Va to properly control the transistors (first PFET 110, second PFET 120, third NFET 130, and fourth NFET 140) and can ensure the accuracy and reliability of the output signal in circuits that require high-speed operation (e.g., RF switches).

[0098] The radio frequency switch driver 100 assists the operation of the transistor by using parallel resistors (first resistor 150, second resistor 160, third resistor 170 and fourth resistor 180) to improve electrical stability, reduce EMI (electromagnetic interference) and improve the quality of the output signal.

[0099] The RF switch driver 100 controls the state of the transistor according to the state of the external control voltage Vsw to switch the output signal to Vc or -Vc, and supports high-speed operation and power efficiency while improving stability.

[0100] High-voltage silicon-on-insulator (SOI) CMOS RF switches can be used to select or block the path of radio frequency signals.

[0101] Switch drivers for high-voltage SOICMOS RF switch control are based on SOICMOS technology, providing operational stability in high-frequency, high-temperature, and high-voltage environments. They accurately generate and output high-voltage signals for RF switch control, maintaining RF signal quality with high reliability and stability while reducing insertion loss and power loss. Such switch drivers can be important components in various high-frequency applications, such as high-speed communication systems, RF antenna switches, and high-voltage RF amplifier control.

[0102] The RF switch driver 100 can generate signals for controlling RF switches and ensure stable and reliable switching operation in high-voltage environments.

[0103] The RF switch driver 100 can generate signals for controlling high-voltage SOI CMOS RF switches and ensure stable and reliable switching operation in high-voltage environments.

[0104] RF switch drivers offer the following benefits: preventing transistor performance degradation and ensuring long-term circuit stability by adding a parallel resistor Rd; rapidly switching the output signal Vc or -Vc based on the state of the external control voltage Vsw; minimizing signal loss in high-frequency circuits such as RF switches; reducing power consumption through the operation of complementary transistors (PFETs and NFETs); maximizing circuit efficiency; and ensuring high-frequency signal quality by maintaining signal quality, suppressing voltage fluctuations, and reducing EMI.

[0105] Figure 4 This is a schematic diagram illustrating an example of using a switch driver according to relevant technologies.

[0106] The diagram, starting from the top, shows the first source of the first PFET 110, the first drain of the first PFET 100, the second source of the second PFET 120, the second drain of the second PFET 120, the third drain of the third NFET, the third source of the third NFET, the fourth drain of the fourth NFET, and the fourth source of the fourth NFET.

[0107] The external control voltage Vsw switches high-low-high at 60μs and 120μs. The numbers in the box represent the voltage between the drain and source of the transistor in the off state. Figure 4 As shown, even after each voltage stabilizes, these two figures exhibit a significant difference at each stage. The maximum difference is 3.2V - 2.92V = 0.28V.

[0108] Figure 5 This is a diagram illustrating an example of using a switch driver according to an embodiment of this disclosure.

[0109] The diagram, starting from the top, shows the first source of the first PFET 110, the first drain of the first PFET 100, the second source of the second PFET 120, the second drain of the second PFET 120, the third drain of the third NFET, the third source of the third NFET, the fourth drain of the fourth NFET, and the fourth source of the fourth NFET.

[0110] The external control voltage Vsw switches high-low-high at 60μs and 120μs. The numbers in the box represent the voltage between the drain and source of the transistor in the off state. Figure 5 As shown, it can be seen that after each voltage stabilizes, the two numbers match at each stage.

[0111] This disclosure relates to a circuit implementation for implementing a radio frequency switch with power drive capability and low insertion loss characteristics, and in particular, to prevent performance degradation of the switch driver that may occur in circuits that significantly improve RF performance by using high control voltages.

[0112] The RF switch driver 100 uses two transistors connected in series to switch between a positive control voltage Vc and a negative control voltage -Vc at the gate to turn the RF switch on and off. Here, when the control voltage Vc changes instantaneously, if the voltage distribution between the drain and source of each transistor is not equal, or if the bias voltages for all transistor nodes are not defined, a high voltage may be momentarily applied to a particular transistor, which could lead to transient or permanent performance degradation.

[0113] At this point, the problem of transient or permanent performance degradation can be mitigated by connecting resistors with large resistance values ​​(first resistor 150, second resistor 160, third resistor 170, and fourth resistor 180) in parallel between the drain and source of each transistor. The reason for using resistors with large resistance values ​​is to minimize current consumption.

[0114] The technical features disclosed in each embodiment of this disclosure are not limited to that embodiment, and unless they are incompatible with each other, the technical features of each embodiment can be combined and applied to other embodiments.

[0115] Therefore, each embodiment will focus on explaining each technical feature, but they can be combined and applied together unless they are incompatible with each other.

[0116] This disclosure is not limited to the embodiments and drawings described above, and various modifications and variations can be made by those skilled in the art to which this disclosure pertains. Therefore, the scope of this disclosure needs to be determined not only by the claims of this specification but also by the equivalents of the claims.

Claims

1. A radio frequency switch driver, wherein, A first P-channel field-effect transistor (PFET) and a second PFET are connected in series. A third N-channel field-effect transistor (NFET) and a fourth NFET are connected in series. The second drain of the second PFET and the third drain of the third NFET are connected. An output signal is output to a connection point where the second drain of the second PFET and the third drain of the third NFET are connected. The first PFET, the second PFET, the third NFET, and the fourth NFET each have a first resistor, a second resistor, a third resistor, and a fourth resistor respectively connected between their source and drain.

2. The RF switch driver according to claim 1, wherein, The first drain of the first PFET is connected in series with the second source of the second PFET, the third source of the third NFET is connected in series with the fourth drain of the fourth NFET, and the output signal is output to the connection point. The second drain of the second PFET and the third drain of the third NFET are connected at the connection point. The first PFET has a first resistor connected between a first source and a first drain, the second PFET has a second resistor connected between a second source and a second drain, the third NFET has a third resistor connected between a third drain and a third source, and the fourth NFET has a fourth resistor connected between a fourth drain and a fourth source.

3. The RF switch driver according to claim 1 or 2, wherein, The first source of the first PFET is connected to the positive control voltage Vc, and the fourth source of the fourth NFET is connected to the negative control voltage -Vc. A first gate voltage Vb is provided to the first gate of the first PFET, and a second gate voltage Va is provided to the fourth gate of the fourth NFET.

4. The RF switch driver according to claim 3, wherein, The RF switch driver generates the first gate voltage Vb and the second gate voltage Va according to the state of the external control voltage Vsw, and the external control voltage Vsw is converted into the first gate voltage Vb and the second gate voltage Va through logic circuits or level shifters in the RF switch driver.

5. The RF switch driver according to claim 4, wherein, When the external control voltage Vsw is high, Vb is 0V, Va is -Vc, and the output signal Vc is output. When the external control voltage Vsw is low, Vb is applied with Vc, Va is applied with 0V, and the output signal -Vc is output.

6. The RF switch driver according to claim 2, wherein, The first resistor, the second resistor, the third resistor, and the fourth resistor are configured to have resistance values ​​from 1 MΩ to 10 MΩ, and vary depending on the characteristics of the transistor.

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