Environment-friendly photoelectric detector applied to image recognition, preparation method and imaging system

The AgBiS2 quantum dot photodetector prepared by direct synthesis solves the problems of toxic materials and complex structure of existing photodetectors, and realizes the synergistic design of self-driven and wide-spectral response photodetectors and neural networks, thereby improving the robustness and accuracy of image recognition.

CN122248894APending Publication Date: 2026-06-19CHANGSHU INSTITUTE OF TECHNOLOGY
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
CHANGSHU INSTITUTE OF TECHNOLOGY
Filing Date
2026-03-20
Publication Date
2026-06-19

AI Technical Summary

Technical Problem

Existing photodetectors rely on toxic materials, have complex device structures, require high computing power, are difficult to integrate with self-driving and wide-spectral response, and lack synergistic optimization of environmentally friendly photodetectors and neural networks.

Method used

AgBiS2 quantum dots were prepared by direct synthesis. A photodetector consisting of an ITO glass substrate, an electron transport layer, an AgBiS2-inks photosensitive layer, an AgBiS2-MPA buffer layer, a PTAA hole transport layer, and a metal electrode layer was constructed. Image recognition was performed by combining artificial neural networks and convolutional neural networks.

Benefits of technology

It achieves self-driving capability and wide spectral response of environmentally friendly photodetectors, improves the robustness and accuracy of image recognition, simplifies the fabrication process, and reduces power consumption.

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Abstract

This disclosure proposes an environmentally friendly photodetector for image recognition, its fabrication method, and an imaging system. The photodetector comprises, from bottom to top, an ITO glass substrate, an electron transport layer, an AgBiS2-inks photosensitive layer, an AgBiS2-MPA buffer layer, a PTAA hole transport layer, and a metal electrode layer. The ITO glass substrate includes a glass substrate and an ITO thin film layer on the glass substrate, with the ITO thin film layer and the metal electrode layer serving as the bottom and top electrodes of the photodetector, respectively. The AgBiS2-inks photosensitive layer, the AgBiS2-MPA buffer layer, and the PTAA hole transport layer form a cascaded energy level structure. This disclosure employs an environmentally friendly AgBiS2-based direct synthesis strategy to form the photosensitive layer and buffer layer, which reduces recombination losses and lowers the hole interface barrier.
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