6-inch mosaic single crystal diamond wafer and method of making the same

By combining a mosaic array of multiple 2-inch single-crystal diamond seed crystals with a diamond fusion layer, the problem of fabricating large-size single-crystal diamond wafers was solved, achieving high-quality 6-inch wafer fabrication and improving the structural integrity and surface flatness of the wafer.

CN122257110APending Publication Date: 2026-06-23HENAN CHAOYING ROBOT CO LTD
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Patent Information

Authority / Receiving Office
CN Β· China
Patent Type
Applications(China)
Current Assignee / Owner
HENAN CHAOYING ROBOT CO LTD
Filing Date
2026-05-06
Publication Date
2026-06-23

AI Technical Summary

Technical Problem

Existing technologies struggle to produce high-quality, large-size single-crystal diamond wafers, especially 6-inch wafers, due to issues such as uneven growth rates, decreased quality in edge regions, increased wafer thickness differences, stress concentration at splicing interfaces, and lattice mismatches.

Method used

A mosaic array of multiple 2-inch single-crystal diamond seed crystals was arranged to form a splicing interface, and the splicing interface was filled with a diamond fusion layer. Combined with a staged microwave plasma CVD process and global planarization treatment, a 6-inch mosaic spliced ​​single-crystal diamond wafer was prepared.

Benefits of technology

The fabrication of 6-inch single-crystal diamond wafers has been achieved, improving the structural integrity and surface flatness of the wafers, reducing the fabrication difficulty, and enhancing the wafers' stability and processing adaptability.

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Abstract

This invention discloses a 6-inch mosaic-jointed single-crystal diamond wafer and its preparation method. In the field of large-size diamond material preparation technology, this invention addresses the problems of difficulty in directly preparing 6-inch single-crystal diamond wafers from single seed crystals, low crystal orientation matching accuracy, stress concentration at the joint interface, insufficient interface fusion, and poor wafer flatness in traditional splicing growth. The invention proposes a wafer structure consisting of multiple single-crystal diamond seed crystals arranged in a mosaic array, with a joint interface formed between adjacent single-crystal diamond seed crystals. A diamond fusion layer fills the joint interface and covers the surface of the single-crystal diamond seed crystals, and a surface functional layer is disposed on the surface of the diamond fusion layer. During preparation, seed crystal pretreatment, precise arrangement, interface pretreatment, fusion growth, and global flattening are performed sequentially. Through crystal orientation calibration, hydrogen plasma etching, and staged CVD growth, the joint interface is fully fused to form a continuous integral structure.
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