image sensor

Abstract

Image sensors are disclosed. The image sensors can include a plurality of light-receiving areas formed on a first surface of a substrate and disposed adjacent to each other, the plurality of light-receiving areas including a first light-receiving area and a second light-receiving area disposed adjacent to the first light-receiving area; a photodiode isolation pattern formed on the first surface of the substrate, the photodiode isolation pattern configured to electrically isolate the first light-receiving area from the second light-receiving area; and a backside structure disposed on a second surface of the substrate opposite the first surface, the backside structure including a grid air region and a light-scattering air region, wherein the grid air region has a grid shape, and wherein the light-scattering air region overlaps the first light-receiving area.

Description

[0001] This application claims priority to Korean Patent Application No. 10-2024-0194339, filed on December 23, 2024, with the Korean Intellectual Property Office, the entire contents of which are incorporated herein by reference. Technical Field

[0002] The apparatuses and methods consistent with some embodiments of this disclosure relate to image sensors and methods of manufacturing image sensors, and more specifically, to image sensors configured to achieve clear image quality. Background Technology

[0003] An image sensor is a semiconductor device that converts an optical image into an electrical signal. Image sensors are classified into two types: charge-coupled device (CCD) and complementary metal-oxide-semiconductor (CMOS). CMOS image sensors are often referred to as CIS. A CIS consists of multiple pixels arranged in a two-dimensional array. Each pixel may include a photodiode (PD) for converting incident light into an electrical signal. Summary of the Invention

[0004] Some embodiments of this disclosure provide an image sensor configured to achieve clear image quality.

[0005] Some embodiments of this disclosure provide methods for manufacturing image sensors.

[0006] In some embodiments of this disclosure, an image sensor may include: a plurality of light-receiving regions formed on a first surface of a substrate and disposed adjacent to each other, the plurality of light-receiving regions including a first light-receiving region and a second light-receiving region disposed adjacent to the first light-receiving region. The image sensor may further include: a photodiode isolation pattern formed on the first surface of the substrate; the photodiode isolation pattern configured to electrically isolate the first light-receiving region from the second light-receiving region; and a back-side structure disposed on a second surface of the substrate opposite to the first surface, the back-side structure including a grid air region and a light-scattering air region, wherein the grid air region has a grid shape, and wherein the light-scattering air region is superimposed on the first light-receiving region.

[0007] In some embodiments of this disclosure, an image sensor may include: a plurality of light-receiving regions formed on a substrate; and a back-side structure disposed on a rear surface of the substrate, the back-side structure including a grid air region and a light-scattering air region. The grid air region has a grid shape, and the light-scattering air region overlaps with the light-receiving regions of the plurality of light-receiving regions, wherein the refractive index of the material constituting the back-side structure is higher than the refractive index of the grid air region or the light-scattering air region.

[0008] In some embodiments of this disclosure, an image sensor may include: a plurality of light-receiving regions formed on a first surface of a substrate, including a first light-receiving region and a second light-receiving region disposed adjacent to the first light-receiving region; a photodiode isolation pattern configured to electrically isolate the first light-receiving region from the second light-receiving region; a photodiode disposed in each of the plurality of light-receiving regions of the substrate; a transmission transistor disposed on the first surface of the substrate; a floating diffusion region disposed on a portion of the substrate adjacent to the transmission transistor; a fixed charge layer covering the second surface of the substrate; and a back-side structure formed on the fixed charge layer. The back-side structure includes: a light-transmitting pattern including a grid air region and a light-scattering air region; and a microlens layer disposed on the light-transmitting pattern, wherein the grid air region has a grid shape, and wherein the light-scattering air region is superimposed on the first light-receiving region, and wherein the refractive index of the light-transmitting pattern is higher than the refractive index of the grid air region or the light-scattering air region.

[0009] In some embodiments of this disclosure, a method of manufacturing an image sensor may include: forming a light-transmitting layer on a rear surface of a substrate, the substrate including a plurality of light-receiving regions; etching the light-transmitting layer to form a light-transmitting pattern; forming a microlens layer on the light-transmitting pattern; and etching the microlens layer to form a plurality of microlenses. The light-transmitting pattern is superimposed on the plurality of light-receiving regions, wherein the light-transmitting pattern includes grid air regions and light-scattering air regions, and wherein the light-transmitting pattern includes at least one light-scattering air region spaced apart from the grid air regions. Attached Figure Description

[0010] The accompanying drawings are included to provide a further understanding of the disclosed exemplary embodiments and are incorporated in and constitute a part of this specification.

[0011] Figure 1 This is a plan view showing an image sensor consistent with some embodiments of the present disclosure.

[0012] Figure 2A This is consistent with some embodiments of this disclosure. Figure 1 A sectional view of line A-A'.

[0013] Figure 2B This is consistent with some embodiments of this disclosure. Figure 1 A sectional view of line B-B'.

[0014] Figure 2C This illustrates incident radiation consistent with some embodiments of this disclosure. Figure 2A A diagram illustrating the propagation path of light in an image sensor.

[0015] Figures 3A to 3D The use is shown in a sequence consistent with some embodiments of this disclosure. Figure 2A A cross-sectional view of the image sensor processing.

[0016] Figures 4A to 4D This is a cross-sectional view showing an exemplary image sensor consistent with some embodiments of this disclosure.

[0017] Figure 5A and Figure 5B This is a plan view illustrating an exemplary image sensor consistent with some embodiments of this disclosure.

[0018] Figure 6 This is a plan view illustrating an exemplary image sensor consistent with some embodiments of this disclosure.

[0019] Figure 7 This is consistent with some embodiments of this disclosure. Figure 6 A sectional view of line A-A'.

[0020] Figure 8 This is a plan view showing an image sensor consistent with some embodiments of the present disclosure.

[0021] Figure 9 This is consistent with some embodiments of this disclosure. Figure 8 A sectional view of line C-C'.

[0022] Figure 10 This is a cross-sectional view showing an exemplary image sensor consistent with some embodiments of this disclosure.

[0023] Figure 11 This is a cross-sectional view showing an image sensor consistent with some embodiments of the present disclosure.

[0024] Figure 12 This is a cross-sectional view showing an image sensor consistent with some embodiments of the present disclosure.

[0025] Figure 13 This is a cross-sectional view showing an image sensor consistent with some embodiments of the present disclosure. Detailed Implementation

[0026] Exemplary embodiments of the present disclosure will now be described more fully with reference to the accompanying drawings, in which exemplary embodiments are illustrated. The same reference numerals in the drawings denote the same elements, and therefore their descriptions will be omitted.

[0027] Figure 1 This is a plan view illustrating an exemplary image sensor according to an embodiment of the present disclosure. Figure 2A It is along Figure 1 A sectional view of line A-A', and Figure 2B It is along Figure 1 A sectional view of line B-B'.

[0028] Reference Figure 1 , Figure 2A and Figure 2B An image sensor 1000 may be provided. In some embodiments, the image sensor 1000 may be referred to as an infrared sensor or a light sensor. The image sensor 1000 may include a substrate 1. The substrate 1 may include a front surface 1a and a rear surface 1b opposite to each other. Light can be incident into the substrate 1 through the rear surface 1b. In some embodiments, the substrate 1 may be a single-crystal wafer, an epitaxial layer, or a silicon-on-insulator (SOI) wafer, wherein the single-crystal wafer is formed of or includes silicon and / or germanium. The substrate 1 may be doped with a first impurity of a first conductivity type. The first conductivity type may be, for example, p-type. The first impurity may be, for example, boron.

[0029] A photodiode isolation pattern 10 may be disposed in the substrate 1 to define a plurality of light-receiving regions UR that are separated from each other. When viewed in a plan view, the photodiode isolation pattern 10 may have a grid shape. The photodiode isolation pattern 10 may be configured to penetrate the substrate 1 and isolate (e.g., electrically isolate) the light-receiving regions UR. In some embodiments, the light-receiving regions UR and the photodiode isolation pattern 10 may be formed on the front surface 1a of the substrate 1.

[0030] In some embodiments, the photodiode isolation pattern 10 may include an isolation conductive pattern 14 and an isolation insulating pattern 12 (such as...). Figure 2A (As shown in the diagram). The isolation conductive pattern 14 may be spaced apart from the substrate 1. The isolation conductive pattern 14 may include a conductive material having a refractive index different from that of the substrate 1. The isolation conductive pattern 14 may be formed, for example, by doped polycrystalline silicon or a metallic material, or may include, for example, doped polycrystalline silicon or a metallic material. A negative bias voltage may be applied to the isolation conductive pattern 14. The isolation conductive pattern 14 may be used as a common bias line. Therefore, holes that may exist on the surface of the substrate 1 in contact with the photodiode isolation pattern 10 may be fixed, and the dark current properties of the image sensor may be improved.

[0031] An insulating pattern 12 may be disposed between an insulating conductive pattern 14 and a substrate 1. The insulating pattern 12 may include an insulating material having a refractive index different from that of the substrate 1. For example, the insulating pattern 12 may be formed of or comprise silicon oxide.

[0032] A shallow trench isolation pattern ST can be disposed in the portion of the substrate 1 adjacent to the front surface 1a of the substrate 1 to define the active region of the transistor. The shallow trench isolation pattern ST can be formed by a shallow trench isolation method. The shallow trench isolation pattern ST can be formed of at least one of silicon oxide, silicon nitride, and silicon oxynitride, or include at least one of silicon oxide, silicon nitride, and silicon oxynitride, and can have a single-layer structure or a multi-layer structure. When the isolation insulating pattern 12 of the photodiode isolation pattern 10 is formed of the same insulating material as the shallow trench isolation pattern ST, there may be no observable or visible interface between the isolation insulating pattern 12 and the shallow trench isolation pattern ST.

[0033] Optionally, the shallow trench isolation pattern ST can be an impurity region doped with impurities. In this case, the shallow trench isolation pattern ST can be doped with a first impurity to have the same first conductivity type as the substrate 1, and the shallow trench isolation pattern ST can be formed to have a higher doping concentration than the substrate 1.

[0034] Reference Figure 2B A transmission transistor TG may be disposed on the front surface 1a of the substrate 1 and in each of the light-receiving regions UR. A portion of the transmission transistor TG may be disposed on the front surface 1a of the substrate 1, and another portion of the transmission transistor TG may be inserted into the substrate 1. A gate insulating layer Gox may be disposed between the transmission transistor TG and the substrate 1. The gate insulating layer Gox may be formed of at least one of silicon oxide, metal oxide, silicon nitride, and silicon oxynitride, or may include at least one of silicon oxide, metal oxide, silicon nitride, and silicon oxynitride, and may have a single-layer structure or a multi-layer structure. A floating diffusion region FD may be disposed in a portion of the substrate 1 immediately adjacent to the transmission transistor TG. The floating diffusion region FD may be doped with a second impurity having a second conductivity type different from the first conductivity type. The second conductivity type may be, for example, n-type, and the second impurity may be phosphorus or arsenic.

[0035] An interlayer insulating layer 20 may be disposed on the front surface 1a of the substrate 1 to cover the transmission transistor TG. The interlayer insulating layer 20 may be formed of at least one of silicon oxide, silicon nitride, silicon oxynitride, porous insulating material, and silicon carbonitride (SiCN), or may include at least one of silicon oxide, silicon nitride, silicon oxynitride, porous insulating material, and silicon carbonitride (SiCN), and may have a single-layer structure or a multi-layer structure. Interconnects 18 may be disposed in the interlayer insulating layer 20.

[0036] In each of the light-receiving regions UR, a photodiode PD can be disposed in the substrate 1. The photodiode PD can be doped with a second impurity of a second conductivity type, different from the first conductivity type. The second conductivity type can be n-type, and the second impurity can be phosphorus or arsenic. The photodiode PD can be an n-type impurity region, and the photodiode PD and the p-type impurity region of the substrate 1 can form a pn junction serving as a photodiode. When light is incident on the pn junction, electron-hole pairs can be generated in the pn junction.

[0037] The rear surface 1b of substrate 1 may be covered with a fixed charge layer FL (e.g., such as...). Figure 2B (As shown in the diagram). The fixed charge layer FL may be in contact with the back surface 1b. The fixed charge layer FL may be formed of a metal oxide layer or a metal fluoride layer, wherein the oxygen content of the metal oxide layer is lower than its stoichiometric ratio, and the fluorine content of the metal fluoride layer is lower than its stoichiometric ratio. Therefore, the fixed charge layer FL may have a negative fixed charge. The fixed charge layer FL may be formed of a metal oxide or metal fluoride comprising at least one metal, wherein the at least one metal is selected from the group consisting of hafnium (Hf), zirconium (Zr), aluminum (Al), tantalum (Ta), titanium (Ti), yttrium (Y), and lanthanides. Hole accumulation may occur near the fixed charge layer FL. In this case, dark current problems and white spot problems can be effectively suppressed. In some embodiments, the fixed charge layer FL may be formed of at least one of aluminum oxide and hafnium oxide, or may include at least one of aluminum oxide and hafnium oxide, and may have a monolayer structure or a multilayer structure.

[0038] The back-side structure (BSR) can be disposed on the fixed charge layer (FL). At least one of the anti-reflection layer, planarization layer, and protective layer can be additionally disposed between the fixed charge layer (FL) and the back-side structure (BSR). The back-side structure (BSR) may include a gridded air region (GAR) and a light-scattering air region (SAR). The gridded air region (GAR) and the light-scattering air region (SAR) can represent unfilled or empty spaces. Figure 1 As shown, when viewed in a plan view, the grid air region GAR can have a grid shape. For example, the grid shape of the grid air region can represent an arrangement comprising multiple columns and multiple rows of grid air regions intersecting to form adjacent square grid air region shapes. In some embodiments, the grid air region GAR can be superimposed on the photodiode isolation pattern 10, and the light scattering air region SAR can be superimposed on the light receiving region UR. Figure 1 As shown, when viewed in a planar view, each of the light-scattering air regions in the SAR can be surrounded by a gridded air region (GAR).

[0039] In some embodiments, each of the light-scattering air regions (SARs) may have a cross shape when viewed in a plan view. Each of the light-scattering air regions (SARs) may have at most a first width WT1 in a first direction D1 and at least a second width WT2 in the first direction D1. The grid air region (GAR) may have a third width WT3 in the first direction D1 on the photodiode isolation pattern 10. The third width WT3 may be less than the first width WT1. The third width WT3 may be equal to or different from the second width WT2. For example, the third width WT3 may be greater than the second width WT2. The first width WT1 may be equal to the wavelength of the light incident on the light-receiving region UR, or may be in the range of 0.9 to 1.1 times the wavelength of the incident light.

[0040] Reference Figure 2A The back-side structure (BSR) may include a light-transmitting pattern (LSP) and a microlens layer (MLL). The LSP may be superimposed on the light-receiving region (UR). Figure 1 As shown, when viewed in a plan view, the light-transmitting pattern LSP may have a rectangular shape. In some embodiments, the empty (i.e., unfilled) space between adjacent light-transmitting pattern LSPs may be referred to as a grid air region GAR. A light-scattering air region SAR may be disposed in each of the light-transmitting pattern LSPs. In some embodiments, the boundaries of the grid air region GAR and the light-scattering air region SAR may be defined by the light-transmitting pattern LSP. The bottom of the grid air region GAR and the bottom of the light-scattering air region SAR may be defined by a fixed charge layer FL.

[0041] The refractive index of the material constituting the backside structure (BSR) may be higher than that of the grid air region (GAR) and / or the light-scattering air region (SAR). Each of the transparent pattern LSPs may be formed of a transparent material having a higher refractive index than that of the grid air region (GAR) and the light-scattering air region (SAR). The grid air region (GAR) and the light-scattering air region (SAR) may have a refractive index of 1, and the material constituting the transparent pattern LSP may have a refractive index, for example, in the range of 1.4 to 1.6. The transparent pattern LSP may be formed of, for example, low-density silicon oxide, a photoimageable dielectric (PID) material, or a photoresist material. In some embodiments, the material constituting the transparent pattern LSP may have a lower density than the material constituting the insulating pattern 12.

[0042] A microlens layer MLL may cover a light-transmitting pattern LSP. The microlens layer MLL may form the top of a grid air region GAR and a light-scattering air region SAR. The microlens layer MLL may have a bottom surface that convexes in the upward direction on both the grid air region GAR and the light-scattering air region SAR. The material constituting the microlens layer MLL may have a refractive index of approximately 1.6. The material constituting the microlens layer MLL may be the same as the material constituting the light-transmitting pattern LSP. In this case, there may be no observable or visible interface between the microlens layer MLL and the light-transmitting pattern LSP. The microlens layer MLL may include a top that is convex and serves as a microlens ML. The microlens ML may be superimposed on light-receiving regions UR, respectively. In some embodiments, a single microlens ML may be provided to cover multiple light-receiving regions UR.

[0043] Figure 2C This illustrates incident radiation consistent with some embodiments of this disclosure. Figure 2A A diagram illustrating the propagation path of light on an image sensor.

[0044] Reference Figure 2C The light-receiving region UR may include a first light-receiving region UR (1) and a second light-receiving region UR (2) adjacent to the first light-receiving region UR (1). In some embodiments, the first light L1 may be incident on a portion of the light-transmitting pattern LSP through a microlens ML on the second light-receiving region UR (2). Figure 2C As shown, the first light L1 can be incident at an angle. Due to the difference in refractive index between the light-transmitting pattern LSP and the grid air region GAR, the first light L1 can be reflected or refracted by the outermost surface of the light-transmitting pattern LSP or at the boundary between the light-transmitting pattern LSP and the grid air region GAR, and can be incident on the photodiode PD in the second light-receiving region UR (2). The grid air region GAR can prevent the first light L1 from being incident on the first light-receiving region UR (1) adjacent to the second light-receiving region UR (2), and therefore, can prevent crosstalk between adjacent light-receiving regions UR.

[0045] Reference Figure 2C The second light L2 can be incident on the light-transmitting pattern LSP through the microlens ML on the second light-receiving region UR (2). The second light L2 can be incident at an angle. Due to the difference in refractive index between the light-transmitting pattern LSP and the light-scattering air region SAR, the second light L2 can be reflected, refracted, or scattered by the inner surface of the light-transmitting pattern LSP or at the boundary between the light-transmitting pattern LSP and the light-scattering air region SAR, and can be incident on the photodiode PD in the second light-receiving region UR (2). The second light L2 can be reflected, refracted, or scattered by the side surface of the photodiode isolation pattern 10, and can be incident on the photodiode PD. In such a configuration, the light-scattering air region SAR can be used as a beam splitter.

[0046] In some embodiments, the first light L1 and the second light L2 may comprise infrared (IR) light or visible red light having relatively long wavelengths. When the first light L1 and the second light L2 have long wavelengths, they may exhibit low absorption and low quantum efficiency within the substrate 1. In the context of this disclosure, low quantum efficiency means that a small portion of the light is converted into electrical charge. In the image sensor 1000, in some embodiments, the second light L2 may be split into multiple rays traveling along various optical paths and scattered within the substrate 1 due to light scattering in the air region SAR. This allows for multiple reflections and increases the optical path. Therefore, the absorption of the second light L2 can be increased, and the quantum efficiency can be increased. Thus, the modulation transfer function (MTF) characteristics of the image sensor can be improved.

[0047] In the image sensor 1000, since the light-scattering air region SAR, which serves as a beam splitter, is not set in the substrate 1, it is not necessary to perform additional etching on the substrate 1 to form the light-scattering air region SAR. Furthermore, since the substrate 1 is not additionally etched, it is not etch-damaged. Therefore, the formation of dangling bonds can be minimized, dark current and white point problems can be suppressed, dark level characteristics can be improved, and a clear image can be achieved.

[0048] Figures 3A to 3D This illustrates a use consistent with some embodiments of this disclosure. Figure 2A A cross-sectional view of the image sensor processing.

[0049] Reference Figure 2B and Figure 3A A photodiode isolation pattern 10 can be formed in substrate 1 to define a light-receiving region UR. A photodiode PD can be formed in substrate 1. A shallow trench isolation pattern ST, a transmission transistor TG, and a floating diffusion region FD can be formed adjacent to the front surface 1a of substrate 1. An interlayer insulating layer 20 can be formed on the front surface 1a of substrate 1, and interconnects 18 can be formed in the interlayer insulating layer 20. A fixed charge layer FL can be formed on the rear surface 1b of substrate 1. A light-transmitting layer LSL can be formed on the fixed charge layer FL. When the light-transmitting layer LSL is formed of low-density silicon oxide, the light-transmitting layer LSL can be formed by a deposition process. When the light-transmitting layer LSL is formed of a photoimageable dielectric (PID) material or a photoresist material, the light-transmitting layer LSL can be formed by a masking and baking process.

[0050] Reference Figure 3BThis allows the light-transmitting layer LSL to be patterned to form a light-transmitting pattern LSP with a first opening OP1 and a second opening OP2. When viewed in a planar view, the first opening OP1 may have a grid shape and may be superimposed on the photodiode isolation pattern 10. When viewed in a planar view, the second opening OP2 may have a cross shape. The first opening OP1 may correspond to... Figure 1 and Figure 2A The grid air region GAR. The second opening OP2 can correspond to Figure 1 and Figure 2A The light scattering in the air region SAR. When the light-transmitting layer LSL is formed of silicon oxide, patterning of the light-transmitting layer LSL can be performed via an etching process. When the light-transmitting layer LSL is formed of a PID or photoresist material, patterning of the light-transmitting layer LSL can be performed via a photolithography process (e.g., exposure and development).

[0051] Reference Figure 3C A microlens layer (MLL) can be formed on a light-transmitting pattern LSP. In some embodiments, the MLL can be formed of a transparent photoresist material, a transparent thermosetting resin, or a transparent insulating material. In some embodiments, the MLL can be formed of a material with gap-filling properties, or can be formed by a process with gap-filling properties. The MLL can cover the top of each of the first opening OP1 and the second opening OP2 of the light-transmitting pattern LSP, and may not fill the entirety of each of the first opening OP1 and the second opening OP2. As a result, a grid air region (GAR) and a light-scattering air region (SAR) can be formed.

[0052] Reference Figure 3D A mask pattern MK can be formed on the microlens layer MLL. The mask pattern MK can be formed by performing a photolithography process to form a photoresist pattern and then performing a reflow process on the photoresist pattern. The mask pattern MK can be formed in a hemispherical shape, but the shape of the mask pattern is not limited to a hemispherical shape.

[0053] Return to reference Figure 2A An etch-back process can be performed on the microlens layer MLL. Here, the mask pattern MK can also be etched. The shape of the mask pattern MK can be transferred to the microlens layer MLL, and as a result, a microlens ML with a convex shape can be formed in the upper part of the microlens layer MLL. As a result, the image sensor 1000 can be manufactured to have a shape similar to... Figures 1 to 2B The same structure shown.

[0054] Figures 4A to 4D A cross-sectional view of an exemplary image sensor consistent with some embodiments of this disclosure is shown.

[0055] Reference Figure 4AThe back-side structure (BSR) of the image sensor 1001 may further include a capping layer (CVL) disposed between the light-transmitting pattern (LSP) and the microlens layer (MLL). In some embodiments, the capping layer (CVL) may be formed of a material having differential gap-filling properties, or may be formed by a process having relatively differential gap-filling properties. The capping layer (CVL) may be formed of at least one of, for example, silicon oxide and a photoresist material, or may include at least one of, for example, silicon oxide and a photoresist material. The capping layer (CVL) may cover the side surface of the light-transmitting pattern (LSP) and the top surface of the fixed charge layer (FL). Mesh air regions (GAR) and light-scattering air regions (SAR) may be formed in the capping layer (CVL). In addition to the foregoing features, other parts of the image sensor may be configured to have the same characteristics as the reference. Figures 1 to 2B The described embodiments have the same or similar features.

[0056] Reference Figure 4B In the image sensor 1002, a portion of the microlens layer MLL in the back-side structure BSR can be inserted into the region between the light-transmitting pattern LSPs to cover the side surfaces of the light-transmitting pattern LSPs and the top surface of the fixed charge layer FL. Mesh air regions GAR and light-scattering air regions SAR can be formed in the microlens layer MLL between the light-transmitting pattern LSPs. In addition to the aforementioned features, other parts of the image sensor can be configured to have the same characteristics as the reference... Figures 1 to 2B The described embodiments have the same or similar features.

[0057] Reference Figure 4C In the image sensor 1003, the top surface of the fixed charge layer FL between the light-transmitting patterns LSP in the back-side structure BSR may be covered with a lens residual pattern MLR. The lens residual pattern MLR may be formed of the same material as the microlens layer MLL, or may include the same material as the microlens layer MLL. The grid air region GAR and the light-scattering air region SAR may be configured to expose the side surfaces of the light-transmitting patterns LSP. In addition to the aforementioned features, other parts of the image sensor may be configured to have the same characteristics as the reference... Figures 1 to 2B The described embodiments have the same or similar features.

[0058] Reference Figure 4D In the image sensor 1004, the back-side structure (BSR) may not include... Figure 2A The light-transmitting pattern LSP. The gridded air region (GAR) and light-scattering air region (SAR) can be formed in the microlens layer (MLL). In addition to the aforementioned features, other parts of the image sensor can be configured to have the same characteristics as the reference. Figures 1 to 2B The described embodiments have the same or similar features.

[0059] Figure 5A and Figure 5B A plan view of an exemplary image sensor consistent with some embodiments of this disclosure is shown.

[0060] Reference Figure 5A In the image sensor 1005, each of the light-scattering air regions in the SAR can have a star shape when viewed in a planar image. (Refer to...) Figure 5B In the image sensor 1006, each of the light-scattering air region SARs can have an octagonal shape when viewed in a planar view. The planar shape of each of the light-scattering air region SARs is not limited to this example and can have a polygonal shape with three or more vertices.

[0061] Figure 6 A plan view of an exemplary image sensor consistent with some embodiments of this disclosure is shown. Figure 7 Show along Figure 6 A sectional view of line A-A'.

[0062] Reference Figure 6 and Figure 7 The image sensor 1007 can correspond to Figure 2A The image sensor 1000, wherein the light-transmitting pattern LSP is configured to contain a colorant. In other words, Figure 2A The light-transmitting pattern LSP of the image sensor 1000 may correspond to color filters CF1 to CF3. In some embodiments, the light-receiving area UR may include a first light-receiving area UR (1), a second light-receiving area UR (2), and a third light-receiving area UR (3). The first light-receiving area UR (1) may be an area for detecting light of a first color. The second light-receiving area UR (2) may be an area for detecting light of a second color. The third light-receiving area UR (3) may be an area for detecting light of a third color. In some embodiments, the first color filter CF1 may be disposed on the first light-receiving area UR (1), the second color filter CF2 may be disposed on the second light-receiving area UR (2), and the third color filter CF3 may be disposed on the third light-receiving area UR (3).

[0063] The first color filters CF1 to the third color filters CF3 may comprise a photoresist material containing a colorant (e.g., a dye or pigment). Each of the first color filters CF1 to the third color filters CF3 may be blue, red, or green. Optionally, each of the first color filters CF1 to the third color filters CF3 may be cyan, yellow, or magenta. In some embodiments, one of the first color filters CF1 to the third color filters CF3 may not contain any colorant and may be formed from a portion of the microlens layer MLL.

[0064] The gridded air region (GAR) can exist between the first color filter CF1 and the third color filter CF3. The light-scattering air region (SAR) can exist in the first color filter CF1 to the third color filter CF3 respectively. Figure 6An example is shown where the light-scattering air region SARs of the first color filter CF1 to the third color filter CF3 have the same cross shape, the same width, and the same dimensions in a planar view; however, this disclosure is not limited to this example. The light-scattering air region SARs of the first color filter CF1 to the third color filter CF3 may differ in their planar shape, width, and dimensions. In addition to the features described above, other parts of the image sensor may be configured to have the same characteristics as the reference. Figures 1 to 5B The described embodiments have the same or similar features.

[0065] Now refer to Figure 8 , Figure 8 A plan view of an exemplary image sensor consistent with some embodiments of this disclosure is shown. Figure 9 Show along Figure 8 A sectional view of line C-C'.

[0066] Reference Figure 8 and Figure 9 In the image sensor 1008, the back-side structure (BSR) may include a light-transmitting pattern (LSP) and a capping layer (CVL), but may not include... Figure 2A A microlens layer MLL is constructed. Multiple light-transmitting pattern LSPs can be disposed on each light-receiving region UR. Light-scattering air regions SARs can be disposed between the light-transmitting pattern LSPs on each light-receiving region UR. The light-scattering air regions SARs can have a fourth width WT4. The fourth width WT4 can correspond to the distance between the light-transmitting pattern LSPs on each light-receiving region UR. In some embodiments, the fourth width WT4 can be smaller than the wavelength of the light incident on the light-receiving region UR. When viewed in a planar view, each of the light-transmitting pattern LSPs can have various shapes (e.g., closed curves, the letter "L", rectangles, squares, ellipses, or circles). The light-transmitting pattern LSPs can have different widths and lengths from each other. The light-transmitting pattern LSPs can be used as beam splitters configured to improve crosstalk problems and induce light scattering. Additionally, the light-transmitting pattern LSPs can be used as nanoprisms configured to adjust the phase distribution of light with the same wavelength, ensuring that light is focused multiple times onto a specific target region.

[0067] For example, the first light-transmitting pattern LSP (1) to the third light-transmitting pattern LSP (3) can be disposed on the first light-receiving region UR (1). When viewed in a plan view, the first light-transmitting pattern LSP (1) can have a closed curve shape and can be disposed along the edge of the first light-receiving region UR (1). When viewed in a plan view, each of the third light-transmitting patterns LSP (3) can have a square shape, and multiple third light-transmitting patterns LSP (3) can be disposed at the center of the first light-receiving region UR (1). When viewed in a plan view, the second light-transmitting pattern LSP (2) can have a closed curve shape and can be disposed between the first light-transmitting pattern LSP (1) and the third light-transmitting pattern LSP (3). Each of the first light-transmitting pattern LSP (1) to the third light-transmitting pattern LSP (3) on the first light-receiving region UR (1) can be configured to adjust the phase distribution of light having a first wavelength to ensure that light is focused onto the first light-receiving region UR (1) multiple times. The light-scattering air region SAR can be set between the first light-transmitting pattern LSP (1) and the third light-transmitting pattern LSP (3). When viewed in a plan view, each of the light-scattering air region SARs on the first light-receiving region UR (1) can have a closed curve and / or a grid shape.

[0068] In some embodiments, a first light-transmitting pattern LSP (1), a third light-transmitting pattern LSP (3), and a fourth light-transmitting pattern LSP (4) may be disposed on a second light-receiving region UR (2). When viewed in a plan view, the first light-transmitting pattern LSP (1) may have a closed curve shape and may be disposed along the edge of the second light-receiving region UR (2). When viewed in a plan view, each of the third light-transmitting patterns LSP (3) may have a square shape, and a plurality of third light-transmitting patterns LSP (3) may be disposed at the center of the second light-receiving region UR (2). When viewed in a plan view, the fourth light-transmitting pattern LSP (4) may have an "L" shape and may be disposed between the first light-transmitting pattern LSP (1) and the third light-transmitting pattern LSP (3). Each of the first light-transmitting pattern LSP (1), the third light-transmitting pattern LSP (3), and the fourth light-transmitting pattern LSP (4) on the second light-receiving region UR (2) may be configured to adjust the phase distribution of light having a second wavelength to ensure that light is focused onto the second light-receiving region UR (2) multiple times. The light-scattering air region SAR can be set between the first light-transmitting pattern LSP (1), the third light-transmitting pattern LSP (3), and the fourth light-transmitting pattern LSP (4). When viewed in a plan view, each of the light-scattering air region SARs on the second light-receiving region UR (2) can have a grid shape.

[0069] In some embodiments, a first light-transmitting pattern LSP (1), a third light-transmitting pattern LSP (3), a fifth light-transmitting pattern LSP (5), and a sixth light-transmitting pattern LSP (6) may be respectively disposed on a third light-receiving region UR (3). When viewed in a plan view, the first light-transmitting pattern LSP (1) may have a closed curve shape and may be disposed along the edge of the third light-receiving region UR (3). When viewed in a plan view, each of the third light-transmitting patterns LSP (3) may have a square shape, and a plurality of third light-transmitting patterns LSP (3) may be disposed at the center of the third light-receiving region UR (3). When viewed in a plan view, the fifth light-transmitting pattern LSP (5) may have a rectangular shape and may be disposed between the first light-transmitting pattern LSP (1) and the third light-transmitting pattern LSP (3). When viewed in a plan view, the sixth light-transmitting pattern LSP (6) may have a square shape, may be larger than the third light-transmitting pattern LSP (3), and may be disposed between the first light-transmitting pattern LSP (1) and the fifth light-transmitting pattern LSP (5). Each of the first light-transmitting pattern LSP (1), the third light-transmitting pattern LSP (3), the fifth light-transmitting pattern LSP (5), and the sixth light-transmitting pattern LSP (6) on the third light-receiving region UR (3) can be configured to adjust the phase distribution of light with a third wavelength, ensuring that light is focused onto the third light-receiving region UR (3) multiple times. A light-scattering air region SAR can be set between the first light-transmitting pattern LSP (1), the third light-transmitting pattern LSP (3), the fifth light-transmitting pattern LSP (5), and the sixth light-transmitting pattern LSP (6). When viewed in a planar view, each of the light-scattering air region SARs on the third light-receiving region UR (3) can have a grid shape.

[0070] Between the light-receiving regions UR, grid air regions GAR can be disposed between the first light-transmitting pattern LSP (1). The grid air regions GAR can have a third width WT3. A capping layer CVL can be disposed on the light-transmitting pattern LSP. The top surface of the capping layer CVL can be flat. The capping layer CVL can be formed of at least one of silicon oxide and photoresist material. In some embodiments, the light-transmitting pattern LSP can be used to focus light with a desired wavelength onto a desired region (even in the absence of a color filter or infrared filter) and to efficiently focus the light (even in the absence of a microlens ML). In this case, the light sensitivity of the image sensor can be improved. In addition to the features described above, other parts of the image sensor can be configured to have the same characteristics as the reference. Figures 1 to 5B The described embodiments have the same or similar features.

[0071] Figure 10 A cross-sectional view of an exemplary image sensor consistent with some embodiments of this disclosure is shown.

[0072] Reference Figure 10The image sensor 1009 may include a back-side structure (BSR), which is similar to... Figure 9 The image sensor 1008 has a back-side structure and is composed of a capping layer CVL. Light-scattering air region SAR and gridded air region GAR can be formed within the capping CVL. The light-scattering air region SAR and gridded air region GAR can have, for example... Figure 8 The same planar shape in. Figure 10 Image sensor 1009 can correspond to Figure 9 The image sensor 1008 includes a light-transmitting pattern LSP formed of the same material as the capping layer CVL, with no observable interface between the light-transmitting pattern LSP and the capping layer CVL. In addition to the aforementioned features, other parts of the image sensor may be configured to have the same characteristics as the reference layer. Figure 8 and Figure 9 The described embodiments have the same or similar features.

[0073] Figure 11 A cross-sectional view of an exemplary image sensor consistent with some embodiments of this disclosure is shown.

[0074] Reference Figure 11 The image sensor 1010 may include a substrate 1 having a main region APS, an optical black region OB and a pad region PR, an interconnect layer 200 on the front surface 1a of the substrate 1, and a base substrate 400 on the interconnect layer 200.

[0075] As shown, interconnect layer 200 may include upper interconnect layer 221 and lower interconnect layer 223. The main area APS may include reference... Figures 1 to 7 The described light-receiving area UR.

[0076] The first connection structure 50, the first conductive pad 81, and the bulk color filter 90 may be disposed in the optical black area OB and on the substrate 1. The first connection structure 50 may include a first light-shielding pattern 51, an insulating pattern 53, and a first cover pattern 55. The first light-shielding pattern 51 may be formed of a conductive material. The first light-shielding pattern 51 may be formed of, for example, titanium or tungsten, or may include, for example, titanium or tungsten.

[0077] The first light-shielding pattern 51 may be disposed on the rear surface 1b of the substrate 1. The first light-shielding pattern 51 may conformally cover the inner surfaces of the third trench TR3 and the fourth trench TR4. The first light-shielding pattern 51 may be configured to penetrate the photoelectric conversion layer 150 and the upper interconnect layer 221, and connect the photoelectric conversion layer 150 to the interconnect layer 200.

[0078] The first light-blocking pattern 51 can be combined with Figure 2AThe photodiode isolation pattern 10 contacts the isolation conductive pattern 14. The first conductive pad 81 is electrically connected to the isolation conductive pattern 14 of the photodiode isolation pattern 10. The first light-blocking pattern 51 blocks light incident on the optical black area OB.

[0079] A first conductive pad 81 may be disposed in the third trench TR3 to fill the remaining portion of the third trench TR3. The first conductive pad 81 may be formed of at least one metallic material (such as, but not limited to, aluminum), or may include at least one metallic material (such as, but not limited to, aluminum). A negative bias voltage may be applied to the isolation conductive pattern 14 through the first conductive pad 81. In some embodiments, white spot problems or dark current problems may be prevented or suppressed.

[0080] The insulating pattern 53 may fill the remaining portion of the fourth trench TR4. The insulating pattern 53 may be formed to penetrate the entirety or at least a portion of the photoelectric conversion layer 150 and the interconnect layer 200. A first cover pattern 55 may be disposed on the top surface of the insulating pattern 53. The first cover pattern 55 may be disposed on the insulating pattern 53.

[0081] In some embodiments, a bulk color filter 90 may be disposed on a first conductive pad 81, a first light-shielding pattern 51, and a first cover pattern 55. The bulk color filter 90 may cover the first conductive pad 81, the first light-shielding pattern 51, and the first cover pattern 55. In some embodiments, a first protective layer 71 may be disposed on the bulk color filter 90 to hermetically seal the bulk color filter 90.

[0082] Multiple detection areas can be disposed within an optically black area OB, and a first reference photodiode PD' and a second reference area 111 can be disposed within the detection areas. The first reference photodiode PD' can be used to obtain a first reference charge quantity, which represents information about the amount of charge generated under a light-shielding state. The first reference charge quantity can be used as a reference value for comparison with the amount of charge generated in a light-receiving area UR. The second reference area 111 can be used to obtain a second reference charge quantity, which represents information about the amount of charge generated in the absence of the photodiode PD. The second reference charge quantity can be used as information for removing process noise.

[0083] In the pad region PR, a second connection structure 60, a second conductive pad 83, and a second protective layer 73 may be disposed on the substrate 1. In some embodiments, the second connection structure 60 may include a second light-shielding pattern 61, an insulating pattern 63, and a second cover pattern 65.

[0084] The second light-shielding pattern 61 may be disposed on the rear surface 1b of the substrate 1. The second light-shielding pattern 61 may conformally cover the inner surfaces of the fifth trench TR5 and the sixth trench TR6. The second light-shielding pattern 61 may be configured to penetrate the photoelectric conversion layer 150 and the upper interconnect layer 221, and connect the photoelectric conversion layer 150 to the interconnect layer 200. The second light-shielding pattern 61 may contact the interconnect lines in the lower interconnect layer 223. The second light-shielding pattern 61 may be electrically connected to the interconnect lines in the interconnect layer 200. The second light-shielding pattern 61 may be formed of at least one metallic material (such as, but not limited to, titanium or tungsten), or may include at least one metallic material (such as, but not limited to, titanium or tungsten).

[0085] A second conductive pad 83 may be disposed in the fifth trench TR5 to fill the remaining portion of the fifth trench TR5. The second conductive pad 83 may be formed of at least one metallic material (e.g., aluminum), or may include at least one metallic material (e.g., aluminum). The second conductive pad 83 may serve as a conductive path for electrical connection to the exterior of the image sensor. An insulating pattern 63 may fill the remaining portion of the sixth trench TR6. The insulating pattern 63 may be configured to penetrate the entirety or at least a portion of the photoelectric conversion layer 150 and the interconnect layer 200. A second cover pattern 65 may be disposed on the insulating pattern 63. A second protective layer 73 may cover a portion of the second cover pattern 65 and the second light-shielding pattern 61.

[0086] like Figure 12 and Figure 13 As shown, reference Figures 1 to 10 The described image sensor structure can be applied to image sensors with a 3-chip structure.

[0087] Figure 12 A cross-sectional view of an image sensor consistent with some embodiments of this disclosure is shown.

[0088] Reference Figure 12The image sensor 1011 may have a structure in which first sub-chips DE1 to third sub-chips DE3 are stacked sequentially. A “chip” may be referred to as a “die”. The first sub-chip DE1 may include a first substrate SB1 and a first interlayer insulating layer IL1 covering its front surface. The first substrate SB1 may be a semiconductor substrate or an insulating substrate. The first interlayer insulating layer IL1 may be formed of at least one of SiO2, SiN, SiCN, SiON, and SiOCH, or include at least one of SiO2, SiN, SiCN, SiON, and SiOCH, and may have a single-layer or multi-layer structure. Logic circuitry may be disposed in the first sub-chip DE1. The logic circuitry may include, but is not limited to, row drivers, row decoders, column decoders, timing generators, correlated dual samplers (CDS), and / or analog-to-digital converters (ADCs). A first peripheral transistor PTR1, a first contact plug CT1, and a first interconnect IT1 may be disposed on the first substrate SB1 to constitute the logic circuitry. A first shallow trench isolation pattern ST1 may be disposed in the first substrate SB1 to define the active region of the first peripheral transistor PTR1. The first conductive pad CP1 may be disposed on top of the first interlayer insulating layer IL1.

[0089] The second sub-chip DE2 may be placed on and bonded to the first sub-chip DE1. The second sub-chip DE2 may include a second substrate SB2. The front surface SB2_F of the second substrate SB2 may be covered with a second interlayer insulating layer IL2. The front surface SB2_F of the second substrate SB2 may face the first sub-chip DE1. In the main region of the second sub-chip DE2, a reset transistor, a dual-conversion gain transistor, a select transistor SEL including a select gate electrode SEG, and a source follower transistor SF including a source follower gate electrode SFG may be disposed on the front surface SB2_F of the second substrate SB2.

[0090] In the edge region of the second sub-chip DE2, a second peripheral transistor PTR2 may be disposed on the front surface SB2_F of the second substrate SB2. A second shallow trench isolation pattern ST2 may be disposed in the portion of the second substrate SB2 near the front surface SB2_F to define the active regions of the drive transistors (reset transistor, double-conversion gain transistor, source follower transistor, and select transistor) and the second peripheral transistor PTR2. A second contact plug CT2 and a second interconnect IT2 may be disposed in the second interlayer insulating layer IL2. A second conductive pad CP2 may be disposed in the bottom of the second interlayer insulating layer IL2. The bottom surface of the second interlayer insulating layer IL2 may contact the top surface of the first interlayer insulating layer IL1. The second conductive pad CP2 may contact the first conductive pad CP1 respectively. Each pair of first conductive pads CP1 and second conductive pads CP2 in contact with each other may form a single object without an interface between them.

[0091] The rear surface SB2_B of the second substrate SB2 may be sequentially covered by a first back-side insulating layer BL1 and a second back-side insulating layer BL2. A fourth interconnect IT4 may be disposed in the second back-side insulating layer BL2. A third conductive pad CP3 may be disposed on top of the second back-side insulating layer BL2. A through-hole TV may be configured to penetrate a portion of the first back-side insulating layer BL1, the second substrate SB2, the second shallow trench isolation pattern ST2, and the second interlayer insulating layer IL2, and may contact the second interconnect IT2 respectively. The through-hole TV may have a downwardly decreasing width. A via insulating layer TL may be disposed between the through-hole TV and the second substrate SB2.

[0092] A third sub-chip DE3 may be placed on and bonded to a second sub-chip DE2. The third sub-chip DE3 may include a third substrate SB3. The third substrate SB3 may include a main region APS and an edge region ER. The main region APS may include multiple light-receiving regions UR. A photodiode isolation pattern 10 may be disposed in the third substrate SB3 to separate the light-receiving regions UR from each other. In each of the light-receiving regions UR, a photodiode PD may be disposed in the third substrate SB3. The third substrate SB3 may have a front surface SB3_F facing the second sub-chip DE2. A third shallow trench isolation pattern ST3 may be disposed in a portion of the third substrate SB3 near the front surface SB3_F to define an active region of a transmission transistor, each of the active regions including a transmission transistor TG and a floating diffusion region FD.

[0093] The transmission transistor TG and the floating diffusion region FD can be disposed on or near the front surface SB3_F of the third substrate SB3. The front surface SB3_F of the third substrate SB3 can be covered by a third interlayer insulating layer IL3. The third contact plug CT3, the FD interconnect FDL, and the third interconnect IT3 can be disposed in the third interlayer insulating layer IL3. Each of the FD interconnects FDL can be configured to connect to at least two of the floating diffusion regions FD in adjacent optical receiving regions UR. The floating diffusion region FD of the third sub-chip DE3 can be connected to the source follower gate electrode SFG of the source follower transistor SF of the second sub-chip DE2.

[0094] The bottom surface of the third interlayer insulating layer IL3 can contact the top surface of the second back insulating layer BL2 of the second sub-chip DE2. A fourth conductive pad CP4 can be disposed in the bottom of the third interlayer insulating layer IL3. The fourth conductive pad CP4 can contact the third conductive pad CP3 respectively. Each pair of contacting third conductive pads CP3 and fourth conductive pads CP4 can form a single object without an interface between them.

[0095] The rear surface SB3_B of the third substrate SB3 may be covered with a fixed charge layer FL. In the main region APS, color filters CF1 and CF2, as well as microlenses ML, may be disposed on the fixed charge layer FL to define the grid air region GAR and the light scattering air region SAR. In the edge region ER, a first optical black pattern BT, a second optical black pattern CFB, and a microlens layer MLL may be sequentially disposed on the fixed charge layer FL. The first optical black pattern BT may be formed of, but is not limited to, a metallic material (such as titanium or tungsten), or may include, but is not limited to, metallic materials (such as titanium or tungsten). The second optical black pattern CFB may consist of a blue color filter. The microlens layer MLL may be formed of the same material as the microlens ML, or may include the same material as the microlens ML. In addition to the foregoing features, other parts of the image sensor may be configured to have the same or similar features as in the previous embodiments.

[0096] Figure 13 A cross-sectional view of an exemplary image sensor consistent with some embodiments of this disclosure is shown.

[0097] Reference Figure 13 The image sensor 1012 according to this embodiment may have a structure in which first sub-chips DE1 to third sub-chips DE3 are stacked sequentially. The first sub-chip DE1 may be configured to have a structure similar to a reference chip. Figure 12 The same or similar structure is described. The second sub-chip DE2 and the third sub-chip DE3 may have the same... Figure 12 The structure is similar to that in the embodiments. The second substrate SB2 can be a semiconductor substrate, an insulating substrate, or a silicon-on-insulator (SOI) substrate. The first conductive pad CP1 can be disposed on top of the first sub-chip DE1.

[0098] A substrate insulating layer SLL may be disposed within the second substrate SB2 of the second sub-chip DE2. A through-contact plug CCT may be configured to penetrate the second substrate SB2, a portion of the second interlayer insulating layer IL2, and a portion of the third interlayer insulating layer IL3, and connect the FD interconnect FDL to the source follower gate electrode SFG. A through-contact insulating layer CCL may be disposed between the through-contact plug CCT and the second substrate SB2. A second conductive pad CP2 may be disposed at the bottom of the second sub-chip DE2. The second conductive pad CP2 may contact the first conductive pad CP1.

[0099] The input / output pad PA can be disposed on the fixed charge layer FL and in the edge region ER of the third sub-chip DE3. The through-hole TV can be configured to penetrate a portion of the third substrate SB3 and the third interlayer insulating layer IL3 of the third sub-chip DE3, as well as the second substrate SB2 and the second interlayer insulating layer IL2 of the second sub-chip DE2, and connect the input / output pad PA to the second interconnect IT2. In addition to the foregoing features, other parts of the image sensor can be configured to have the same characteristics as the reference. Figure 12 The described embodiments have the same or similar features. The locations of conductive pads CP1 to CP4 and through-hole TV are not limited to... Figure 12 and Figure 13 The position in the embodiments can be changed as appropriate.

[0100] In this specification, a "chip" or "sub-chip" may be defined as a stacked structure formed from different semiconductor wafers. Depending on the bonding shape of the chips and the bonding material between them, the boundaries of the individual chips may not be clearly visible. However, even in such a stacked structure, they can still be individual chips formed from different semiconductor wafers.

[0101] In an image sensor according to some embodiments, the back-side structure may include a grid air region and a light-scattering air region. The grid air region suppresses crosstalk between adjacent light-receiving regions in the light-receiving region, and the light-scattering air region is superimposed on each of the light-receiving regions to improve the quantum efficiency of the image sensor. Therefore, a clear image can be achieved. Furthermore, a method for manufacturing the image sensor is provided.

[0102] Although exemplary embodiments have been described, this disclosure should not be limited to these embodiments. Those skilled in the art will understand that changes in form and detail may be made therein without departing from the spirit and scope of the appended claims. Those skilled in the art will also understand that one or more features of embodiments of this disclosure may be combined differently from one or more features of another embodiment of this disclosure.

Claims

1. An image sensor, comprising: Multiple light-receiving regions are formed on a first surface of a substrate and arranged adjacent to each other, the multiple light-receiving regions including a first light-receiving region and a second light-receiving region arranged adjacent to the first light-receiving region; A photodiode isolation pattern is formed on a first surface of a substrate, and the photodiode isolation pattern is configured to electrically isolate a first light-receiving region from a second light-receiving region. as well as The back-side structure is disposed on the second surface of the substrate opposite to the first surface. The back-side structure includes a grid air region and a light-scattering air region. Among them, the gridded air region has a grid shape, and The light-scattering air region is superimposed on the first light-receiving region.

2. The image sensor according to claim 1, wherein, The grid air region is superimposed with the photodiode isolation pattern.

3. The image sensor according to claim 1, wherein, The light-scattering air region is surrounded by the grid air region.

4. The image sensor according to claim 1, wherein, The back-side structure also includes a microlens configured to overlap with at least one of the plurality of light-receiving regions, wherein the microlens has a convex shape.

5. The image sensor according to claim 1, wherein, The dorsal structure also includes: Translucent patterns define the boundaries of the grid-like air regions and the boundaries of the light-scattering air regions; and A microlens layer is set on the light-transmitting pattern.

6. The image sensor according to claim 5, wherein, The microlens layer forms the top of the grid air region and the top of the light-scattering air region.

7. The image sensor according to claim 5, wherein, Translucent patterns include colorants.

8. The image sensor according to claim 5, wherein, The refractive index of the light-transmitting pattern is higher than that of the grid air region and / or the light-scattering air region.

9. The image sensor according to claim 5, wherein, Photodiode isolation patterns include: The insulating pattern is in contact with the substrate; and An insulating pattern is placed between the conductive pattern and the substrate, and a conductive pattern is spaced apart from the substrate. The density of the light-transmitting pattern is lower than that of the insulating pattern.

10. The image sensor according to any one of claims 1 to 9, wherein, When viewed in a planar diagram, the light-scattering air region has one of the following shapes: cross-shaped, star-shaped, polygonal, or closed curve.

11. An image sensor, comprising: Multiple light-receiving regions are formed on the substrate; as well as The back-side structure, disposed on the rear surface of the substrate, includes a grid air region and a light-scattering air region. The grid-like air region has a grid shape. The light-scattering air region overlaps with the light-receiving regions of the plurality of light-receiving regions, and The refractive index of the material constituting the back side structure is higher than that of the grid air region and / or the light scattering air region.

12. The image sensor according to claim 11, further comprising: A photodiode isolation pattern is disposed in a substrate to electrically isolate the plurality of light-receiving regions, wherein a grid air region is superimposed on the photodiode isolation pattern.

13. The image sensor according to claim 11, wherein, The light-scattering air region is surrounded by the grid air region.

14. The image sensor according to claim 11, wherein, The dorsal structure includes: Translucent patterns define the boundaries of the grid-like air regions and the boundaries of the light-scattering air regions; and A microlens layer is set on the light-transmitting pattern.

15. The image sensor according to claim 14, wherein, Translucent patterns include colorants.

16. The image sensor according to claim 14, wherein, Photodiode isolation patterns include: The insulating pattern is in contact with the substrate; and An insulating pattern is placed between the conductive pattern and the substrate, and a conductive pattern is spaced apart from the substrate. The density of the light-transmitting pattern is lower than that of the insulating pattern.

17. An image sensor, comprising: Multiple light-receiving regions are formed on a first surface of a substrate, and include a first light-receiving region and a second light-receiving region disposed adjacent to the first light-receiving region; The photodiode isolation pattern is configured to electrically isolate the first light-receiving region from the second light-receiving region; A photodiode is disposed in each of the plurality of light-receiving regions of the substrate; A transmission transistor is disposed on the first surface of the substrate; The floating diffusion region is disposed on the portion of the substrate adjacent to the transport transistor; A fixed charge layer covers the second surface of the substrate opposite to the first surface; as well as The backside structure is formed on a fixed charge layer. The dorsal structure includes: Translucent patterns, including gridded air regions and light-scattering air regions; and A microlens layer is set on the light-transmitting pattern. The grid-like air region has a grid shape. In this configuration, the light-scattering air region overlaps with the first light-receiving region, and The refractive index of the light-transmitting pattern is higher than that of the grid air region and / or the light-scattering air region.

18. The image sensor according to claim 17, wherein, The grid air region is superimposed with the photodiode isolation pattern.

19. The image sensor according to claim 17, wherein, The light-scattering air region is surrounded by the grid air region.

20. The image sensor according to claim 17, wherein, Translucent patterns include colorants.

Images