Gas supply device and film forming apparatus

By setting up an outlet area and a purge gas in the gas supply device, the problem of contaminant deposition caused by eddies in the gas supply device is solved, achieving cleaning of the base sidewall and uniformity of the silicon carbide epitaxial layer, reducing equipment cost and manufacturing difficulty.

CN122279536APending Publication Date: 2026-06-26ADVANCED MICRO-FABRICATION EQUIPMENT INC LINGANG
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
ADVANCED MICRO-FABRICATION EQUIPMENT INC LINGANG
Filing Date
2024-12-24
Publication Date
2026-06-26

AI Technical Summary

Technical Problem

A vortex exists in the area near the outlet of the gas supply device, causing contaminants to deposit on the inner side of the cone of the gas supply device, affecting the normal use of the substrate.

Method used

Design a gas supply device comprising first and second independent gas supply zones. By setting an outlet port area on the outlet surface, the first source gas is isolated by purge gas to reduce the formation of eddies. The doping uniformity of the silicon carbide epitaxial layer is adjusted by adjusting the flow rate and carbon content of the purge gas.

Benefits of technology

It effectively reduces or eliminates contaminant deposition on the sidewall of the base, improves the doping uniformity of the silicon carbide epitaxial layer, and reduces the difficulty and cost of equipment manufacturing.

✦ Generated by Eureka AI based on patent content.

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Abstract

This invention discloses a gas supply device and a film formation device. The gas supply device includes a first source gas hole and a second source gas hole arranged alternately and at intervals. The first source gas hole and the second source gas hole respectively introduce a first source gas and a second source gas into the reaction chamber. The molecular weight of the main raw material gas molecules in the first source gas is smaller than the molecular weight of the main raw material gas molecules in the second source gas. The second gas outlet group includes a plurality of gas outlet regions arranged circumferentially at intervals. The gas outlet regions are located in at least a portion of the area surrounding the outermost first source gas hole in the first gas outlet group; the radial aperture of the gas outlet holes in the gas outlet regions is smaller than the aperture of the first source gas holes; the gas outlet regions are used to introduce purge gas into the reaction chamber. This invention solves the problem that the presence of adsorbents may cause them to fall off and affect the substrate.
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