Fib preparation method and apparatus for cl testing, cl testing method

By using a phased FIB processing method, the amorphous layer and ion implantation layer are gradually removed, which solves the problem of cross-sectional roughness caused by FIB processing and improves the accuracy and precision of CL testing.

CN122282832APending Publication Date: 2026-06-26JIANGSU INST OF ADVANCED SEMICON CO LTD
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Patent Information

Application Number
CN202610323540.6
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2026-03-17
Publication Date
2026-06-26

AI Technical Summary

Technical Problem

In existing technologies, high-energy ion damage is generated during FIB processing of semiconductor cross-sections, resulting in rough cross-sections and affecting the accuracy and precision of CL testing.

Method used

The FIB staged processing method is adopted, including cross-section prototype cutting and cross-section trimming sample preparation. By gradually reducing the ion beam voltage and beam current intensity, the amorphous layer and ion implantation layer are removed to ensure that the cross-section flatness and tilt angle meet the CL test requirements.

Benefits of technology

It improves the adaptability and accuracy of CL testing, and solves the problem of low test precision and accuracy caused by cross-sectional roughness.

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Abstract

This invention relates to the field of semiconductor technology, providing a FIB sample preparation method and equipment for CL testing, and a CL testing method, comprising: based on a staged FIB processing approach, sequentially performing a preliminary cross-sectional cutting and a cross-sectional trimming of the region to be characterized in the sample to be tested to obtain a target cross-section; wherein, the surface of the initial sample cross-section obtained after the preliminary cross-sectional cutting contains an amorphous layer and an ion-implanted layer; after the cross-sectional trimming, the amorphous layer and ion-implanted layer are removed, and the flatness and tilt angle of the target cross-section meet the CL testing objectives. Through staged processing, first rough processing followed by fine trimming, the amorphous layer and ion-implanted layer generated due to lattice damage caused by high-energy ion implantation during processing can affect the photoelectric properties of subsequent cross-sections. By setting corresponding trimming stages, a target cross-section with a flat surface and low damage to the sample surface, without affecting photoelectric properties, can be obtained, improving the adaptability and accuracy of CL testing.
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