A light-emitting diode and a light-emitting device

Abstract

This application provides a light-emitting diode (LED) and a light-emitting device. A first electrode is formed on one side of the first semiconductor layer of the LED. The first electrode has multiple body portions distributed on opposite sides of the LED and multiple extension portions electrically connected to the body portions. The multiple extension portions include main extension portions and secondary extension portions distributed in a first direction and a second direction. This design increases the number of body portions of the first electrode and adaptively increases the number and distribution of the extension portions, thus shortening the current conduction distance, improving current spreadability, and making the current distribution of the LED more uniform. Simultaneously, the increased number of body portions correspondingly increases the number of leads between the LED and external circuits, thereby reducing the equivalent resistance of the LED and ultimately lowering the voltage of the LED package, reducing input power, and thus improving the photoelectric conversion efficiency of the LED.

Description

Technical Field

[0001] This application relates to the field of semiconductor manufacturing technology, and in particular to a light-emitting diode and a light-emitting device. Background Technology

[0002] The basic structure of a light-emitting diode (LED) consists of a PN junction between a P-type semiconductor and an N-type semiconductor. When a forward voltage is applied to the LED, electrons and holes recombine at the junction of the PN junction, releasing energy. This energy is emitted in the form of photons, forming light radiation.

[0003] The photoelectric conversion efficiency of an LED is a key indicator for measuring its overall performance and a core metric from R&D to application. Its value directly determines the product's energy efficiency ratio, heat dissipation requirements, and application value. LED photoelectric conversion efficiency = output optical power / input electrical power. Input power is generally determined by the device's operating voltage and current; therefore, improving LED conversion efficiency hinges on increasing output optical power. Output optical power is primarily determined by luminous intensity and voltage. Increasing the LED's luminous intensity and / or decreasing the LED's operating voltage can both increase output optical power, thereby improving the LED's photoelectric conversion efficiency.

[0004] For medium to large-sized LEDs, especially vertically structured LEDs, electrodes are typically placed on the top and bottom sides of the LED chip to ensure uniform current distribution. In actual use, processes such as die bonding and wire bonding are performed. The chip is connected to the external circuit via pads and leads (gold / copper / alloy wires, etc.). Therefore, the voltage after LED packaging is determined not only by the resistance of the LED chip itself, but also by the resistance of the leads, the contact resistance between the leads and the chip electrodes, and the contact resistance between the leads and the external circuit.

[0005] For vertical LEDs, the conventional design is to have one electrode on each of the top and bottom sides. However, as the size of the LED increases, the current conduction distance increases, and this design may cause uneven current distribution, resulting in obvious dark areas in the LED chip and affecting photoelectric conversion efficiency.

[0006] Therefore, how to improve current spread, thereby reducing the operating voltage of the device and lowering the input power, and thus improving the photoelectric conversion efficiency of LEDs, is a problem that the industry urgently needs to solve. Summary of the Invention

[0007] In view of the defects and shortcomings of the existing light-emitting diodes in terms of light emission, the purpose of this application is to provide a light-emitting diode and a light-emitting device to obtain a light-emitting diode product with high photoelectric conversion efficiency.

[0008] To achieve the above and other related objectives, in a first aspect, this application provides a light-emitting diode, which includes at least: A semiconductor epitaxial stack, wherein the semiconductor epitaxial stack comprises a first semiconductor layer, an active layer, and a second semiconductor layer stacked sequentially; The electrode structure includes a first electrode electrically connected to a first semiconductor layer and a second electrode electrically connected to a second semiconductor layer. The first electrode includes n body portions and a plurality of extension portions electrically connected to the body portions. In the top view direction, the plurality of body portions are distributed on opposite sides of the light-emitting diode in a first direction. The body portions are located in the edge region of the light-emitting diode on their respective sides. In the second direction, the minimum distance D1 between the geometric center of the body portion and the edge of the first electrode satisfies: D1≥D0 / (2n+1), where n≥2, D0 is the extension length of the first electrode in the second direction, and the first direction and the second direction are two intersecting directions in the top view direction of the light-emitting diode.

[0009] This application also provides a light-emitting device, including a circuit board and a light-emitting element disposed on the circuit board, wherein the light-emitting element includes the light-emitting diode provided in this application.

[0010] Compared with the prior art, the light-emitting diode and light-emitting device provided in this application have at least the following beneficial effects: In the technical solution of this application, a first electrode is formed on one side of the first semiconductor layer of the light-emitting diode (LED). This first electrode has multiple body portions distributed on opposite sides of the LED and multiple extension portions electrically connected to the body portions. The multiple extension portions include main extension portions and secondary extension portions distributed in a first direction and a second direction. This design increases the number of body portions of the first electrode and adaptively increases the number and distribution of extension portions, thus shortening the current conduction distance, improving current spreadability, and making the current distribution of the LED more uniform. Simultaneously, the increased number of body portions correspondingly increases the number of leads between the LED and external circuits, thereby reducing the equivalent resistance of the LED, lowering the voltage of the LED package, reducing input power, and thus improving the photoelectric conversion efficiency of the LED. The limited distance between the body portion and the outermost edge of the first electrode prevents the body portion from being located at the corner of the LED, which not only improves the uniformity of current spread but also enhances the reliability of subsequent wire bonding.

[0011] In addition, the light-emitting devices provided in this application all include the light-emitting diodes provided by the above-mentioned technical solutions. Therefore, the light-emitting devices also have the above-mentioned good technical effects. Attached Figure Description

[0012] Figure 1 The diagram shown is a structural schematic of a light-emitting diode in the prior art.

[0013] Figure 2 The diagram shown is a top view of the light-emitting diode provided in Embodiment 1 of this application. For ease of illustration, only the projected outline of a portion of the structure is shown.

[0014] Figure 3 Displayed as along Figure 2 The diagram shows a cross-sectional view along the AA direction.

[0015] Figure 4 Displayed as along Figure 2 The diagram shows a projection of line BB.

[0016] Figure 5 The diagram shown is a top view of the light-emitting diode provided in Embodiment 2 of this application. For ease of illustration, only the projected outline of a portion of the structure is shown.

[0017] Figure 6 The diagram shown is a schematic diagram of the structure of a light-emitting diode provided in Embodiment 3 of this application.

[0018] Figure 7 The diagram shown is a schematic diagram of the structure of a light-emitting diode provided in Embodiment 4 of this application.

[0019] Figure 8 The diagram shows the current diffusion effect of a light-emitting diode under low current, serving as a comparative example.

[0020] Figure 9 The diagram shows the current diffusion effect of a light-emitting diode under high current, presented as a comparative example.

[0021] Figure 10 The diagram shown illustrates the current diffusion effect of a light-emitting diode under low current, as described in Embodiment 1 of this application.

[0022] Figure 11 The diagram shown illustrates the current diffusion effect of a light-emitting diode under high current, as described in Embodiment 1 of this application.

[0023] Figure 12 The diagram shown is a schematic diagram of the light-emitting device provided in Embodiment 5 of this application.

[0024] List of reference numerals in the attached diagram: 11. Semiconductor stack; 12. Pad; 13. Extension bar.

[0025] 110. Semiconductor epitaxial stack; 111. First semiconductor layer; 112. Active layer; 113. Second semiconductor layer; 114. Ohmic contact layer; 120. Dielectric layer; 121. Through-hole; 130. Metal reflective layer; 140. Substrate; 151. First electrode; 1511. Body portion; 1512. Main extension portion; 1513. Secondary extension portion; 152. Second electrode; 153. Transparent conductive layer; 170. Insulating protective layer; 180. Bonding layer.

[0026] 200, Light-emitting device; 210, Substrate; 211, Device layer; 212, Interconnect layer; 220, Light-emitting unit. Detailed Implementation

[0027] The following specific embodiments illustrate the implementation of this application. Those skilled in the art can easily understand other advantages and effects of this application from the content disclosed in this specification. This application can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of this application. It should be noted that, unless otherwise specified, the following embodiments and features in the embodiments can be combined with each other.

[0028] It should be noted that the illustrations provided in the embodiments of this application are merely schematic representations of the basic concept of this application. Although the illustrations only show components relevant to this application and are not drawn according to the actual number, shape, and size of components in implementation, the shape, quantity, and proportion of each component can be arbitrarily changed in actual implementation, and the layout of the components may also be more complex. The structures, proportions, sizes, etc., shown in the accompanying drawings are only used to complement the content disclosed in the specification for those skilled in the art to understand and read, and are not intended to limit the implementation conditions of this application. Therefore, they have no substantial technical significance. Any modifications to the structure, changes in the proportional relationships, or adjustments to the size, without affecting the effects and purposes that this application can produce, should still fall within the scope of the technical content disclosed in this application.

[0029] See Figure 1 In the prior art, light-emitting diodes have electrodes formed above the semiconductor stack 11, and these electrodes include pads 12 and extension strips 13 connected to the pads 12. For example... Figure 1 As shown, only one pad 12 and a few extension strips 13 are set above the light-emitting diode. However, as the size of the LED increases and the current conduction distance increases, this design may cause uneven current distribution, resulting in obvious dark areas of the LED chip and affecting photoelectric conversion efficiency.

[0030] To address the aforementioned technical deficiencies, this application provides a light-emitting diode, which includes at least: A semiconductor epitaxial stack, wherein the semiconductor epitaxial stack comprises a first semiconductor layer, an active layer, and a second semiconductor layer stacked sequentially; The electrode structure includes a first electrode electrically connected to a first semiconductor layer and a second electrode electrically connected to a second semiconductor layer. The first electrode includes n body portions and a plurality of extension portions electrically connected to the body portions. In the top view direction, the plurality of body portions are distributed on opposite sides of the light-emitting diode in a first direction. The body portions are located in the edge region of the light-emitting diode on their respective sides. In the second direction, the minimum distance D1 between the geometric center of the body portion and the edge of the first electrode satisfies: D1≥D0 / (2n+1), where n≥2, D0 is the extension length of the first electrode in the second direction, and the first direction and the second direction are two intersecting directions in the top view direction of the light-emitting diode.

[0031] This application increases the number of body portions of the first electrode through the above design, and adaptively increases the number and distribution of extension portions. This shortens the current conduction distance, improves current spread, and makes the current distribution of the LED more uniform. Simultaneously, the increased number of body portions correspondingly increases the number of leads between the LED and external circuitry, thus reducing the equivalent resistance of the LED, lowering the voltage of the LED package, reducing input power, and improving the photoelectric conversion efficiency of the LED. The limited distance between the body portion and the outermost edge of the first electrode prevents the body portion from being located at the corner of the LED, which not only improves the uniformity of current spread but also enhances the reliability of subsequent wire bonding.

[0032] Optionally, the extension includes a plurality of secondary extensions extending along a first direction and a plurality of main extensions extending along a second direction. The main extensions are connected to the body on the same side in the second direction, and the secondary extensions are connected to the body and main extensions on opposite sides in the first direction.

[0033] The distribution of the main extension portion and the secondary extension portion above the first semiconductor layer of the light-emitting diode ensures that as many extension portions as possible are distributed above the first semiconductor layer, which is beneficial to improving the uniformity of current spread.

[0034] Optionally, the number of the body parts is greater than or equal to four.

[0035] The increased number of LED body components correspondingly increases the number of leads between the LED and external circuitry. This reduces the equivalent resistance of the LED, lowers the voltage across the LED package, reduces input power, and thus improves the photoelectric conversion efficiency of the LED. Simultaneously, the increased body component size shortens the current propagation distance, improving diffusion uniformity.

[0036] Optionally, when the number of the body parts is even, the number of the multiple body parts is the same on opposite sides.

[0037] Optionally, in the first direction, the main extension is located at the edge position of the light-emitting diode.

[0038] Optionally, the body portions on opposite sides are staggered.

[0039] The arrangement of the body and the extension section can make the various parts of the first electrode as evenly distributed as possible above the first semiconductor layer, thereby improving the uniformity of current spread.

[0040] Optionally, the body portions on opposite sides are aligned.

[0041] Optionally, the extension includes a plurality of main extensions extending along a first direction and a plurality of secondary extensions extending along a second direction. The main extensions are connected to two body portions aligned with each other in the first direction, and the secondary extensions are spaced apart in the first direction and connected to the main extensions in the second direction.

[0042] The main body is positioned opposite to the main body, the main extension is connected to the main body, and the secondary extensions are distributed sequentially between adjacent main bodies and main extensions, which further shortens the current diffusion distance, improves current spreadability, and makes the current distribution of the light-emitting diode more uniform.

[0043] Optionally, the plurality of the secondary extensions are distributed at equal intervals.

[0044] The secondary extension serves as the main current diffusion path above the first semiconductor layer. Its uniform distribution above the first semiconductor layer is beneficial for the uniform diffusion of current throughout the entire first semiconductor layer.

[0045] Optionally, the projections of the plurality of body parts are equally spaced when projected in the first direction.

[0046] The body portion serves as the connection between the light-emitting diode and the external circuit. Its uniform distribution helps improve the operating voltage of the device, thereby improving the photoelectric conversion efficiency of the light-emitting diode.

[0047] The light-emitting diode also includes: A dielectric layer is formed on the side of the second semiconductor layer away from the active layer, and a via is formed in the dielectric layer; A metal reflective layer is formed on the side of the dielectric layer away from the second semiconductor layer and fills the via. A bonding layer is formed on the side of the metal reflective layer away from the dielectric layer; A substrate is formed on the side of the bonding layer away from the metal reflective layer, and a second electrode is formed on the side of the substrate away from the bonding layer.

[0048] This application also provides a light-emitting device, which includes a circuit board and a light-emitting element disposed on the circuit board, wherein the light-emitting element includes the light-emitting diode provided in this application.

[0049] The light-emitting device includes the light-emitting device described above in this application, and therefore also has better light emission effect, as well as good voltage performance.

[0050] The following embodiments will now be described in detail. For ease of understanding, the growth direction of the semiconductor epitaxial stack is defined as growing from bottom to top, with the substrate located below the semiconductor epitaxial stack and the electrode structure located above the semiconductor epitaxial stack.

[0051] Example 1

[0052] This embodiment provides a light-emitting diode (LED), see [link]. Figure 2 and Figure 3 The light-emitting diode includes a semiconductor epitaxial stack 110, which can be any material capable of emitting light under voltage, such as GaN, GaAs, AlGaN, AlInP, AlGaInP, or AlGaP. Similarly, as... Figure 3 As shown, the semiconductor epitaxial stack 110 includes a first semiconductor layer 111, an active layer 112, and a second semiconductor layer 113. In this embodiment, the light-emitting diode has a vertical structure, with one side of the first semiconductor layer 111 being the light-emitting side.

[0053] The first semiconductor layer 111, the active layer 112, and the second semiconductor layer 113 may include semiconductor material layers of group III-V elements, such as Al, Ga, In, and P. The first semiconductor layer 111 may include N-type impurities such as Si, Ge, and Sn, and the second semiconductor layer 113 may include P-type impurities such as Mg, Sr, Ba, and Zn. The active layer 112 provides the region for electron-hole recombination and emits light radiation. Different materials can be selected according to the emission wavelength. The material of the active layer 112 is aluminum gallium indium phosphide (AlGaInP) series, emitting red, yellow, or orange light. The active layer 112 can be a single heterostructure (SH), a double heterostructure (DH), a double-sided double heterostructure (DDH), or a multi-quantum well (MQW). The active layer 112 comprises a well layer and a barrier layer, wherein the barrier layer has a larger band gap than the well layer. By adjusting the composition ratio of the semiconductor material in the active layer 112, it is desired to radiate light of different wavelengths. In this embodiment, the active layer 112 radiates light in the 550nm–900nm wavelength range, such as red, yellow, and orange light, and further, radiates red light. The active layer 112 is a material layer that provides electroluminescent radiation, such as aluminum gallium indium phosphide (AGaInP) or aluminum gallium arsenide (AGaAs), more preferably AGaInP, which can be a single quantum well or a multi-quantum well.

[0054] In this embodiment, the active layer 112 may optionally be a multi-quantum-well layer, comprising alternating AlGaInP quantum well layers and AlGaInP quantum barrier layers, wherein the Al content in the AlGaInP quantum well layers and AlGaInP quantum barrier layers is different. The multi-quantum-well layer may comprise alternating stacked AlGaInP quantum well layers and AlGaInP quantum barrier layers for 1 to 200 cycles. As an example, the multi-quantum-well layer comprises alternating stacked AlGaInP quantum well layers and AlGaInP quantum barrier layers for 5 cycles.

[0055] Similarly, refer to Figure 3 The light-emitting diode may further include an ohmic contact layer 114 formed on the side of the first semiconductor layer 111 away from the active layer 112. This ohmic contact layer 114 may be a heavily doped AlGaAs layer, GaAs layer, AlInP layer, GaInP layer, or AlGaInP layer, etc. The dopant may be N-type impurities such as Si, Ge, or Sn, with a doping concentration greater than or equal to 1.0E+19 atom / cm³. 3 Furthermore, greater than or equal to 1.0E+20atom / cm3 Optionally, the thickness of the ohmic contact layer 114 is between 10 nm and 500 nm, and more specifically, between 50 nm and 500 nm, 100 nm and 500 nm, 50 nm and 400 nm, 100 nm and 200 nm, etc.

[0056] Similarly, refer to Figure 2 and 3 The light-emitting diode in this embodiment further includes an electrode structure, which includes a first electrode 151 and a second electrode 152. The first electrode 151 is formed on the side of the first semiconductor layer 111 away from the active layer 112 and is electrically connected to the first semiconductor layer 111. In this embodiment, the first electrode 151 includes a plurality of body portions 1511 and a plurality of extension portions connected to the body portions 1511. Specifically, the first electrode 151 includes four body portions 1511, such as... Figure 2 As shown in the top view, these four body parts 1511 are distributed along the first direction (i.e., Figure 2 On opposite sides (in the Y direction), and on that side, the body portion 1511 is located in the edge region of the light-emitting diode. The number of body portions 1511 can be greater, and can be reasonably set according to the size of the light-emitting diode, the decreasing trend of its equivalent resistance, etc. (Refer to...) Figure 2 As shown, the extension specifically includes the portion along the second direction (i.e. Figure 2 The main extension portion 1512 extends from the main body portion 1511 in the X direction, and along the first direction (i.e., Figure 2 The first electrode 151 extends from the main body 1511 and the main extension 1512 in the Y direction. The main body 1511, the main extension 1512, and the secondary extension 1513 form a continuous structure, thereby forming a continuous current path. The main extension 1512 and the secondary extension 1513 can both be formed as finger structures. The first electrode 151 can include multiple main extensions 1512 and multiple secondary extensions 1513.

[0057] As described above, increasing the number of body portions 1511, along with an adaptive increase in the number and distribution of extension portions, shortens the current conduction distance, improves current spreadability, and makes the current distribution of the LED more uniform. Simultaneously, the increased number of body portions 1511 correspondingly increases the number of leads between the LED and external circuitry, thus reducing the equivalent resistance of the LED, lowering the voltage of the LED package, reducing input power, and thereby improving the photoelectric conversion efficiency of the LED. The distribution of the main and secondary extension portions above the first semiconductor layer of the LED, ensuring that as many extension portions as possible are distributed above the first semiconductor layer, further improves the uniformity of current spread.

[0058] Refer again Figure 2In this embodiment, the number of body parts 1511 is four, i.e., an even number. The four body parts 1511 are distributed in pairs on the same side. Furthermore, the four body parts 1511 on both sides are staggered, i.e., as shown... Figure 4 The projections shown in the second direction are interlaced. Furthermore, the multiple body parts 1511 are evenly distributed, i.e. Figure 4 The spacing between the projections of the plurality of body portions 1511 in the second direction shown is the same. Similarly, as Figure 2 As shown, multiple secondary extensions 1513 are evenly spaced above the first semiconductor layer 111, meaning that the spacing between adjacent secondary extensions 1513 is the same. The uniform distribution of these secondary extensions above the first semiconductor layer, serving as the main current diffusion path, facilitates uniform current diffusion across the entire first semiconductor layer.

[0059] Similarly, Figure 2 As shown, in the second direction (X direction in the figure), the minimum distance D1 between the geometric center of the body portion 1511 and the outermost edge of the first electrode 151 satisfies: D1≥D0 / (2n+1), where n is the number of body portions 1511 and n≥4, and D0 is the extension length of the first electrode 151 in the second direction. For example, in this embodiment, when n=4, the above D1≥D0 / 9. The distance between the body portion 1511 and the outermost edge of the first electrode 151 is limited so that the body portion 1511 is not located at the corner of the light-emitting diode, which is beneficial to improving the uniformity of current spread and also improves the reliability of subsequent wire bonding. Furthermore, there is also a minimum distance between the outermost edge of the first electrode 151 and the outermost edge of the light-emitting diode, which is not less than 5um, so that the first electrode 151 can be distributed in different areas of the light-emitting diode as much as possible, improving the uniformity of current.

[0060] To verify the current diffusion effect of the LED in this embodiment, a comparative LED was designed for comparison. The diffusion effects of the two LEDs were compared under high and low current conditions. Specifically, the high current was 1.6 A and the low current was 700 mA. The comparative LED had two relatively distributed body portions as its first electrode; the rest of the configuration was the same as the LED in this embodiment. Figure 8 and Figure 9 As shown, the comparative LEDs exhibit varying degrees of uneven diffusion under both high and low current conditions. Current is concentrated near the body, and diffusion worsens with distance from the body, especially under high current conditions. However, as... Figure 10 and Figure 11As shown, this embodiment has four first electrodes in the main body. Whether the current is large or small, it exhibits good current diffusion uniformity. Even at a position far from the main body, the current can flow in well, thus ensuring the photoelectric conversion efficiency and light emission effect of the light-emitting diode.

[0061] Optionally, the first electrode 151 is formed as a multilayer structure, for example, it can be any one or more of Au, Ni, AuGeNi, Ti, Pt, BeAu and AuZn.

[0062] Refer again Figure 3 The light-emitting diode in this embodiment further includes a substrate 140 and an ohmic contact layer 114. The ohmic contact layer is located between the first electrode 151 and the first semiconductor layer 111. The semiconductor epitaxial stack 110 is bonded to the substrate 140 from the side of the second semiconductor layer 113. A bonding layer 180 is formed between the semiconductor epitaxial stack 110 and the substrate 140, and the bonding layer 180 bonds the semiconductor epitaxial stack 110 and the substrate 140 together. The second electrode 152 is located on the side of the substrate 140 away from the semiconductor epitaxial stack 110 and is electrically connected to the second semiconductor layer 113.

[0063] The substrate 140 can be a semiconductor substrate, a metal substrate, etc. The substrate 140 can be a silicon (Si) substrate, a germanium (Ge) substrate, a silicon carbide (SiC) substrate, a gallium nitride (GaN) substrate, an aluminum nitride (AlN) substrate, a gallium phosphide (GaP) substrate, or a gallium arsenide (GaAs) substrate, etc., and in this embodiment, a silicon substrate is preferred. Optionally, the bonding layer 180 is a metal bonding layer, such as Cu, Al, Sn, Au, Ag, Pb, Ti, Ni, In, Pt, or W. A dielectric layer 120 and a metal reflective layer 130 are also formed between the bonding layer 180 and the semiconductor epitaxial stack 110, with the metal reflective layer 130 formed between the dielectric layer 120 and the bonding layer 180. Specifically, a dielectric layer 120 is formed on the side of the second semiconductor layer 113 away from the active layer 112, a metal reflective layer 130 is formed on the side of the dielectric layer 120 away from the second semiconductor layer 113, and a bonding layer 180 covers the metal reflective layer 130. In an optional embodiment, a via 121 is formed in the dielectric layer 120, and the metal reflective layer 130 fills the via 121, thereby achieving electrical connection with the second semiconductor layer 113. Further, a transparent conductive layer 153 is disposed on the second semiconductor layer 113 at the bottom of the via 121, forming an ohmic contact with the second semiconductor layer 113. The transparent conductive layer 153 can be a material layer such as ITO. Furthermore, to prevent current concentration near the electrode, the via 121 and the first electrode 151 are not aligned vertically, and are staggered, thereby increasing current diffusion and improving the light-emitting effect.

[0064] The dielectric layer 120 can be a single-layer structure formed from one of SiO2, SiN, SiON, TiO2, etc., or a multilayer structure formed from any combination of these. Optionally, it can be a DBR structure with reflective properties, such as a DBR structure formed from SiO2 and TiO2. Optionally, the metal reflective layer can be an alloy of one or more of Ag, Al, Cu, Sn, Au, etc. In this embodiment, the dielectric layer 120 is a DBR structure, the metal reflective layer 130 is an Ag mirror, and the dielectric layer 120 and the metal reflective layer 130 form a total internal reflection structure. This increases the reflection of light radiated from the active layer 112 and enhances the light extraction efficiency of the light-emitting diode. In addition, as mentioned above, both the metal reflective layer 130 and the bonding layer 180 are metal layers, so the adhesion between them is good, which is beneficial to improving the reliability of the light-emitting diode. On the other side of the substrate 140 opposite to the semiconductor epitaxial stack 110, a back gold layer is formed. This back gold layer can serve as a second electrode 152 electrically connected to the second semiconductor layer 113.

[0065] Refer again Figure 3 The light-emitting diode in this embodiment also includes an insulating protective layer 170. This insulating protective layer 170 covers the sidewalls of the light-emitting diode, and further, covers the edge portion of the upper surface of the first semiconductor layer 111. The insulating protective layer 170 may, for example, be SiO2. x SiN x SiO x N y Al2O3, TiO x Any one or more combinations thereof. The insulating protective layer 170 can effectively prevent the light-emitting diode, especially the semiconductor epitaxial stack 110, from contamination or damage by external moisture, impurities, etc., ensuring the performance reliability and durability of the light-emitting diode. In addition, the insulating protective layer 170 can also achieve insulation between the first electrode 151 and the second electrode 152, preventing defects such as short circuits between them, and improving the reliability of the light-emitting diode.

[0066] Example 2

[0067] This embodiment provides a light-emitting diode, such as Figure 5 As shown, the light-emitting diode also includes a semiconductor epitaxial stack 110, which can be any material that can emit light under voltage, such as GaN, GaAs, AlGaN, AlInP, AlGaInP, or AlGaP. The semiconductor epitaxial stack 110 includes a first semiconductor layer 111, an active layer 112, and a second semiconductor layer 113.

[0068] Similarly, the first electrode 151 includes four body portions 1511, which are distributed along the first direction of the light-emitting diode (i.e., Figure 5For example, in the Y direction, the body portion 1511 is located on the edge region of the light-emitting diode, on the opposite sides, and on the corresponding side. Unlike other embodiments, as shown in other embodiments... Figure 5 As shown, in this embodiment, the four body portions 1511 are arranged in pairs on both sides of the first direction, and in the first direction, two body portions 1511 are aligned with each other, that is, the four body portions 1511 form two mutually aligned groups in the first direction. The extension portion specifically includes portions along the first direction (i.e., Figure 5 The main extension portion 1512 extends from the main body portion 1511 in the Y direction, and along the second direction (i.e., Figure 5 The secondary extension 1513 extends from the main body 1511 and the main extension 1512 (in the X direction). The main body 1511, the main extension 1512, and the secondary extension 1513 form a continuous structure, thereby forming a continuous current path. Figure 5 As shown, each main extension 1512 is connected to two body portions 1511 aligned with each other in the first direction. That is, in this embodiment, there are two main extension portions 1512, which are respectively connected to two sets of body portions 1511 aligned with each other in the first direction. At the edge connecting the body portions 1511, a primary extension portion 1513 is formed. This primary extension portion 1513 is connected to the body portions 1511 along the second direction and forms a continuous structure. The remaining secondary extension portions 1513 located between the body portions 1511 are respectively connected to the main extension portions 1512. The secondary extension portions 1513 extending along the same straight line in the second direction are connected through the main extension portions 1512 to form a continuous structure. The end of each secondary extension portion 1513 extends to the edge region of the light-emitting diode in the second direction. Furthermore, the ends of adjacent secondary extension portions 1513 are not continuous in the first direction. This arrangement further shortens the current diffusion distance and can further improve the current diffusion uniformity.

[0069] Example 3

[0070] This embodiment provides a light-emitting diode, such as Figure 6 As shown, the light-emitting diode also includes a semiconductor epitaxial stack 110, which can be any material that can emit light under voltage, such as GaN, GaAs, AlGaN, AlInP, AlGaInP, or AlGaP. The semiconductor epitaxial stack 110 includes a first semiconductor layer 111, an active layer 112, and a second semiconductor layer 113.

[0071] Unlike the other embodiments, as Figure 6 As shown, in this embodiment, the first electrode 151 includes an odd number of body portions 1511, for example... Figure 6The five shown are examples of this. It is understood that the number of body sections can be three, seven, etc., and can be reasonably set according to the size of the LED, the decreasing trend of its equivalent resistance, etc. Specifically, these five body sections 1511 are distributed along the first direction of the LED (i.e.,...). Figure 2 On opposite sides (in the Y direction), and on that side, the body portion 1511 is located in the edge region of the light-emitting diode. For example... Figure 6 As shown, the five body parts 1511 on both sides are staggered. Similarly, the spacing between the projections of the multiple body parts 1511 in the second direction is the same (see reference). Figure 4 (As shown). The arrangement of the main extension section 1512 and the secondary extension section 1513 in the extension section can be referred to the description of Embodiment 1, and will not be repeated here.

[0072] Example 4

[0073] The light-emitting diode also includes a semiconductor epitaxial stack 110, which can be any material that can emit light under voltage, such as GaN, GaAs, AlGaN, AlInP, AlGaInP, or AlGaP. The semiconductor epitaxial stack 110 includes a first semiconductor layer 111, an active layer 112, and a second semiconductor layer 113.

[0074] Unlike other embodiments, such as Figure 7 As shown, the second semiconductor layer 113 of the light-emitting diode has a patterned structure on the side away from the active layer 112. For example, when the outermost layer of the current spreading layer 113 away from the active layer 112 is a current spreading layer formed by a P-type GaP layer, a portion of the current spreading layer is etched away to pattern the current spreading layer, and the remaining portion serves as the part that forms an electrical connection with the second electrode 152. Since the current spreading layer formed by the GaP layer is partially removed, the light absorption phenomenon caused by it can be reduced, thereby improving the light extraction efficiency of the light-emitting diode.

[0075] Example 5

[0076] This embodiment provides a light-emitting device, such as... Figure 12As shown, the light-emitting device 200 includes a circuit board 210 and a light-emitting unit 220 located above the circuit board 210. A device layer 211 and an interconnect layer 212 are formed on the circuit board 210. The device layer 211 includes complementary metal-oxide-semiconductor (CMOS) devices or TFT devices, which can constitute the driving circuit and control circuit of the light-emitting diode unit. The light-emitting unit is located above the circuit board 210 and electrically connected to the interconnect layer 212. In this embodiment, the light-emitting unit includes any one or more light-emitting diodes provided in Embodiments 1 to 3 of this application. The light-emitting diode is electrically connected to the interconnect layer 212 through a first electrode 151 and a second electrode 152. The interconnect layer 212 is also electrically connected to the devices in the device layer 211, thereby realizing the electrical connection between the light-emitting diode and the devices, and the light-emitting diode can be controlled through the devices. Since the light-emitting device includes the light-emitting diode of this application, it also has good light emission performance.

[0077] The light-emitting device 200 may also include a housing to protect the light-emitting device from external contamination or damage, while not affecting the light emission effect of the light-emitting device, thereby improving the light emission effect and display effect of the light-emitting device.

[0078] In summary, the light-emitting diode and light-emitting device provided in this application effectively overcome the various shortcomings of the prior art and have high industrial application value.

[0079] The above embodiments are merely illustrative of the principles and effects of this application and are not intended to limit this application. Any person skilled in the art can modify or alter the above embodiments without departing from the spirit and scope of this application. Therefore, all equivalent modifications or alterations made by those skilled in the art without departing from the spirit and technical concept disclosed in this application should still be covered by the claims of this application.

Claims

1. A light-emitting diode, characterized in that, At least including: A semiconductor epitaxial stack, the semiconductor epitaxial stack comprising a first semiconductor layer, an active layer and a second semiconductor layer stacked sequentially; The electrode structure includes a first electrode electrically connected to a first semiconductor layer and a second electrode electrically connected to a second semiconductor layer. The first electrode includes n body portions and a plurality of extension portions electrically connected to the body portions. In a top view, the plurality of body portions are distributed on opposite sides of the light-emitting diode in a first direction. The body portions are located in the edge region of the light-emitting diode on their respective sides. In a second direction, the minimum distance D1 between the geometric center of the body portion and the edge of the first electrode satisfies: D1≥D0 / (2n+1), where n≥2, D0 is the extension length of the first electrode in the second direction, and the first direction and the second direction are two intersecting directions in the top view of the light-emitting diode.

2. The light-emitting diode according to claim 1, characterized in that, The extension includes a plurality of secondary extensions extending along a first direction and a plurality of main extensions extending along a second direction. The main extensions are connected to the body on the same side in the second direction, and the secondary extensions are connected to the body and the main extensions on opposite sides in the first direction.

3. The light-emitting diode according to claim 1, characterized in that, The number of the main body parts is greater than or equal to four.

4. The light-emitting diode according to claim 1 or 3, characterized in that, When the number of the body parts is even, the number of the multiple body parts is the same on opposite sides.

5. The light-emitting diode according to claim 2, characterized in that, In the first direction, the main extension is located at the edge position of the light-emitting diode.

6. The light-emitting diode according to claim 1, characterized in that, The main body parts on opposite sides are staggered.

7. The light-emitting diode according to claim 1, characterized in that, The body portions on opposite sides are aligned and distributed.

8. The light-emitting diode according to claim 7, wherein the extension portion includes a plurality of main extension portions extending along a first direction and a plurality of secondary extension portions extending along a second direction, the main extension portions being connected to two body portions aligned with each other in the first direction, the secondary extension portions being spaced apart in the first direction and connected to the main extension portions in the second direction.

9. The light-emitting diode according to claim 2 or 8, characterized in that, The multiple secondary extensions are distributed at equal intervals.

10. The light-emitting diode according to claim 2 or 4, characterized in that, Projecting in the first direction, the projections of the plurality of body parts are equally spaced.

11. The light-emitting diode according to claim 1, characterized in that, Also includes: A dielectric layer is formed on the side of the second semiconductor layer away from the active layer; A metal reflective layer is formed on the side of the dielectric layer away from the second semiconductor layer; A bonding layer is formed on the side of the metal reflective layer away from the dielectric layer; A substrate is formed on the side of the bonding layer away from the metal reflective layer, and a second electrode is formed on the side of the substrate away from the bonding layer.

12. A light-emitting device, characterized in that, It includes a circuit board and a light-emitting element disposed on the circuit board, wherein the light-emitting element includes a light-emitting diode as described in any one of claims 1 to 11.

Images