Method of manufacturing electronic devices and optical detection system

Abstract

The present invention provides a method for manufacturing an electronic device and an optical inspection system. The manufacturing method includes providing a substrate; performing a first modification step on at least a portion of the substrate; generating first lateral incident light to guide the first lateral incident light into the interior of the substrate; inspecting the substrate after the first modification step to obtain inspection information related to the state of the substrate; and determining whether rework is required based on the inspection information.

Description

Technical Field

[0001] This invention relates to a method for manufacturing an electronic device and an optical inspection system, and more particularly to a method for manufacturing an electronic device that supports a transparent substrate and an optical inspection system. Background Technology

[0002] Laser-assisted refining technology is commonly used to create through-glass vias (TGVs) on glass substrates. The quality of this technology directly impacts subsequent processes and product reliability, thus requiring rigorous testing. Relying solely on Automated Optical Inspection (AOI) to observe surface morphology may be insufficient to assess the potential risks posed by microcracks or other defects within the refining zone of the transparent substrate. Therefore, providing an efficient inspection method for transparent substrates is a pressing issue that needs to be addressed. Summary of the Invention

[0003] The purpose of this invention is to provide a method for manufacturing an electronic device and an optical inspection system.

[0004] This invention provides a method for manufacturing an electronic device. The method includes providing a substrate, performing a first modification step on at least a portion of the substrate, generating a first lateral incident light to guide the first lateral incident light into the interior of the substrate, inspecting the substrate after the first modification step to obtain detection information related to the substrate's state, and determining, based on the detection information, whether the substrate requires rework. When it is determined that the substrate requires rework, a laser re-modification step is performed on the substrate; and when it is determined that the substrate does not require the rework, an etching step is performed on the substrate to form at least one through-hole in the substrate.

[0005] This invention also provides an optical inspection system. The optical inspection system includes a transparent object to be tested, a first light source, and a lens. The first light source is disposed on one side of the transparent object to be tested to provide a first lateral incident light. The lens is disposed on the transparent object to be tested. After at least a portion of the transparent object to be tested undergoes a first modification step, the first light source generates the first lateral incident light, so that the first lateral incident light is guided into the interior of the transparent object to be tested. The lens examines the image of the transparent object to be tested on a photosensitive element after the first modification step to obtain detection information related to the state of the transparent object to be tested. The detection information is used to determine whether the transparent object to be tested needs reprocessing. Attached Figure Description

[0006] Figure 1 The diagram shows a flowchart of a method for manufacturing an electronic device according to an embodiment of the present invention.

[0007] Figure 2 As shown Figure 1A schematic diagram of the laser modification step in the manufacturing method of electronic devices.

[0008] Figure 3 As shown Figure 1 A schematic diagram of the etching step in the manufacturing method of electronic devices.

[0009] Figure 4 As shown Figure 1 A schematic diagram of the outline of the laser-modified region and the scratches on the substrate detected by the first lateral incident light in the manufacturing method of the electronic device.

[0010] Figure 5 As shown Figure 1 A schematic diagram of a method for manufacturing an electronic device, which uses a first lateral incident light to detect perforated areas and defects on a substrate.

[0011] Figure 6 The diagram shown is an architectural diagram of the optical detection system according to the first embodiment of the present invention.

[0012] Figure 7 The diagram shown is an architectural diagram of the optical detection system according to the second embodiment of the present invention.

[0013] Figure 8 The diagram shown is an architectural diagram of the optical detection system according to the third embodiment of the present invention.

[0014] Figure 9 The diagram shown is a structural diagram of an electronic device according to an embodiment of the present invention.

[0015] Figure 10 The diagram shown is a structural diagram of an electronic device according to another embodiment of the present invention.

[0016] Explanation of reference numerals in the attached figures: S100 to S109 - steps; 100, 200, 300 - optical detection system; 10 - substrate; 20 - protective layer; 10a - laser-modified area; 10b - perforation; E1 - first lateral incident light; L1, L2 - optical paths; W small -Inner hole diameter; W large - Outer aperture; 11- First light source; 111- Second light source; 12- Lens; 30- Camera; E2- Output light; 70- Processing unit; 80- Memory; 40- Collimating lens; 50- Grating structure; 60- Beam expander; EU, SE- Active and passive components; CE1, CE2, CE3- Connectors; IST- Intermediate layer; RDL- Redistribution layer; BFF1, BFF2, BFF3- Buffer section; PL, SS- Sub-substrate; PCB- Circuit board; CV, CL, MP, M2P, M3P- Conductive material; IL, IL1, IL2- Insulating layer. Detailed Implementation

[0017] The present invention can be understood by referring to the following detailed description in conjunction with the accompanying drawings. It should be noted that, for ease of understanding and for the sake of brevity, many of the accompanying drawings depict only a portion of the electronic device, and specific elements in the drawings are not drawn to scale. Furthermore, the number and size of the elements in the drawings are for illustrative purposes only and are not intended to limit the scope of the present invention.

[0018] Throughout this specification and the appended claims, certain terms are used to refer to specific elements. Those skilled in the art will understand that electronic device manufacturers may use different names to refer to the same elements. This invention is not intended to distinguish between elements that function identically but have different names.

[0019] In the specification and claims of this invention, the terms "comprising," "containing," and "having" are open-ended terms and should therefore be interpreted as "containing but not limited to...". Thus, when the terms "comprising," "containing," and / or "having" are used in the description of this invention, they specify the presence of the corresponding features, areas, steps, operations, and / or components, but do not exclude the presence of one or more of the corresponding features, areas, steps, operations, and / or components.

[0020] The directional terms used in this invention, such as "up," "down," "front," "back," "left," and "right," are merely for reference to the accompanying drawings. Therefore, the directional terms used are illustrative and not intended to limit the invention. In the accompanying drawings, each figure illustrates general features of the methods, structures, and / or materials used in specific embodiments. However, these figures should not be construed as defining or limiting the scope or nature covered by these embodiments. For example, for clarity, the relative dimensions, thicknesses, and positions of various film layers, regions, and / or structures may be reduced or enlarged.

[0021] When a component (e.g., a membrane or region) is referred to as "on another component," it can be directly on that component, or there may be other components between them. Conversely, when a component is referred to as "directly on another component," there are no components between them. Furthermore, when a component is referred to as "on another component," the two are vertically related, and this component can be above or below the other component, depending on the orientation of the device.

[0022] It should be understood that when a component or membrane is referred to as being "connected to" another component or membrane, it can be directly connected to this other component or membrane, or there can be an intercalated component or membrane between them. When a component is referred to as being "directly connected to" another component or membrane, there is no intercalated component or membrane between them. Additionally, when a component is referred to as being "coupled to another component (or a variant thereof)," it can be directly electrically connected to this other component, or indirectly connected (e.g., indirectly electrically connected) to this other component through one or more components.

[0023] In this invention, when one component "disconnects" from another component, an electrical signal cannot flow between the two components for a specified period of time.

[0024] The terms “approximately” or “about” are generally interpreted as being within ±10% of a given value, or within ±5%, ±3%, ±2%, ±1%, or ±0.5% of a given value.

[0025] The ordinal numbers used in the specification and claims of this invention, such as "first," "second," etc., to modify elements, do not in themselves imply or represent any prior ordinal number of that element (or those elements), nor do they represent the order of one element with another, or the order of manufacturing methods. The use of these ordinal numbers is solely to clearly distinguish one named element from another element with the same name. The claims and specification may not use the same terminology; therefore, a first element in the specification may be a second element in the claims.

[0026] It should be understood that the features described in the following embodiments can be replaced, recombined, or mixed in several different embodiments to complete other embodiments without departing from the spirit of the invention. Features between embodiments can be arbitrarily mixed and combined as long as they do not violate the spirit of the invention or conflict with it.

[0027] In this invention, the electronic device may include a power module, a semiconductor device, a display device, a light-emitting device, an antenna device, a sensing device, a medical device, a splicing device, or any combination thereof, but is not limited thereto. The display device may be a non-self-emissive display or a self-emissive display, depending on the requirements. The antenna device may be a liquid crystal type antenna device or a non-liquid crystal type antenna device; the sensing device may be a sensing device for capacitance, light, heat, or ultrasound; the medical device may be a medical detection device; and the splicing device may be a display splicing device or an antenna splicing device, but is not limited thereto. The electronic device may include electronic components, which may include passive and active components, such as capacitors, resistors, inductors, diodes, electrowetting elements, switching elements, dies, chips, high-bandwidth memory (HBM), or electronic components made by semiconductor processes, including semiconductor layers. Diodes may be dies or chips, and may include light-emitting diodes (LEDs), photodiodes, or varactors, but are not limited thereto. Electronic devices may have peripheral systems such as drive systems, control systems, light source systems, etc., to support the components in the electronic device.

[0028] It should be noted that the technical features in the different embodiments described below may be replaced, reorganized or combined with each other to form another embodiment without departing from the spirit of the invention.

[0029] Figure 1 The diagram shows a flowchart of a method for manufacturing an electronic device according to an embodiment of the present invention. The method disclosed in this embodiment further utilizes side-incident light technology to improve the detection of the substrate's internal condition before and after modification. By performing real-time, non-destructive internal and surface inspections before etching, and combining this with artificial intelligence algorithms for precise analysis and comparison, multiple defects such as scratches, cracks, roughness, and through-hole spacing can be effectively identified. The method of this embodiment can not only determine in real time whether rework is required, but also adjust laser parameters accordingly, significantly improving yield and efficiency. Therefore, it can be widely applied to quality monitoring in high-precision laser micromachining processes for transparent substrates, such as through-glass vias (TGV), advanced packaging, and display panels, providing a more reliable and cost-effective solution, especially for the processing of transparent substrates such as glass. Figure 1 The manufacturing process of the electronic device may include steps S101 to S109. Any reasonable technical changes or hardware replacements fall within the scope of this invention. Steps S101 to S109 are explained below:

[0030] Step S101: Provide a substrate;

[0031] Step S102: Perform laser modification;

[0032] Step S103: Inspect the substrate using an optical inspection system;

[0033] Step S104: Perform a comparison of the Graphics Processing Unit (GPU) server, rule base, and Artificial Intelligence (AI) algorithm to determine whether the laser quality improvement is successful. If yes, proceed to step S105; if no, proceed to step S107.

[0034] Step S105: Perform glass etching;

[0035] Step S106: After glass etching, inspect the substrate and input the photosensitive element data into the processing unit again to match its etching similarity.

[0036] Step S107: Add a manual review mechanism to re-evaluate whether the laser modification has passed. If yes, proceed to the glass etching in step S105; if no, proceed to step S108.

[0037] Step S108: Determine if the substrate can be reworked. If yes, return to step S102, indicating that there are defects in the laser modification and the substrate needs to be re-laminated; if no, proceed to step S109.

[0038] Step S109: Laser modification failed and cannot be remedied; the substrate is scrapped.

[0039] In step S101, a substrate to be processed can be provided. The substrate can be a glass substrate, sapphire substrate, quartz substrate, silicon substrate, or other transparent or semi-transparent substrate suitable for semiconductor or display processes. In this embodiment, a glass substrate is preferred. The size and thickness of the substrate can be determined according to the actual product requirements. In some embodiments, a protective layer (described below) can be provided on one side of the substrate (e.g., the opposite side of the laser incident side) before subsequent laser modification. This protective layer can be tape, another piece of glass, a printed circuit board (PCB), bismaleimide-triazine (BT) resin, or FR-4 (FlameRetardant 4), etc., and its main purpose is to protect the substrate surface, reduce debris generation, or assist laser energy absorption during laser modification. In addition, depending on the process requirements, the substrate may also undergo a substrate thinning step at this stage or before to prepare the substrate for processing or inspection equipment.

[0040] In step S102, a first modification step can be performed on at least a portion of the substrate. In this embodiment, the first modification step can be laser modification. Laser modification utilizes a laser beam emitted from a laser source to irradiate specific areas of the substrate, thereby altering the material properties of these areas and forming multiple laser-modified regions. These laser-modified regions are typically used to predefine the path for perforations in subsequent etching steps, making them easier to remove with the etchant.

[0041] After the laser refining in step S102, but before the etching step S105, the optical inspection system proposed in this invention can perform non-destructive optical inspection of the substrate according to step S103. This step is one of the key steps of this invention, aiming to evaluate the quality of the laser refining in real time. The principle of step S103 is to use side-incident light to probe the interior of the substrate to obtain state information of the laser-refined area and the substrate as a whole. In addition, a second side-incident light can also be provided from the other side of the substrate to obtain richer information.

[0042] When the first lateral incident light propagates inside the substrate, its optical properties (such as intensity, direction, and phase) will change due to interactions with the laser-modified region and any existing defects (such as scattering, refraction, reflection, or absorption), resulting in identifiable optical changes. Furthermore, the contour or size of the laser-modified region (such as the inner and outer apertures) will also affect the propagation of the light.

[0043] The system uses a lens and camera (which may include a photosensitive element) to capture the interacting output light from above the substrate or other suitable locations, and converts it into an image (hereinafter referred to as photosensitive element imaging data). This image data contains rich detection information related to the substrate's state. To achieve comprehensive inspection, this inspection step can be designed to be performed sequentially on multiple areas of the substrate, allowing for smooth subsequent overall evaluation (such as generating a mapping map). Details will be elaborated later.

[0044] In step S104, the manufacturing method of the electronic device can perform a comparison of a GPU server, a rule base, and an AI algorithm to determine whether the laser refining is successful. In this step, the obtained detection information (i.e., image data from the photosensitive element) is transmitted to the processing unit (in this invention, any computing mechanism such as a GPU server, cloud processor, or AI accelerator can be collectively referred to as a processing unit). The processing unit can read pre-stored rule base or reference laser pattern data from memory. Next, the processing unit can execute the AI ​​algorithm. This AI algorithm performs in-depth analysis and comparison of the received detection information. For example, this analysis may include, but is not limited to: (a) comparing the real-time image with the reference laser pattern data to determine whether the morphology of the refining area meets expectations; (b) detecting whether there are scratches or cracks on the substrate; (c) evaluating the surface roughness of the substrate; and (d) measuring the distance between two adjacent perforation areas and determining whether it meets a preset standard. Based on the comparison and analysis results of the AI ​​algorithm, the processing unit determines whether the laser refining is successful. If the judgment result is "pass", the process proceeds to step S105; if the judgment result is "fail", the process proceeds to step S107.

[0045] In step S105, if the substrate passes the AI ​​judgment, it indicates that the laser-modified quality meets the requirements, and subsequent processes can proceed. In this embodiment, this means performing a glass etching step. Before this step, if a protective layer was previously applied, a protective layer removal step must be performed first. Next, the substrate is etched using an etchant (wet or dry). Since the material properties of the laser-modified area have been changed, the etchant will preferentially etch along these areas, ultimately forming the required perforations.

[0046] After etching is completed, in step S106, the substrate can be optionally inspected again. The purpose of this inspection may be to confirm whether the perforations have been formed and whether the apertures meet the specifications, or to check whether new defects have been introduced during the etching process. This step may also include re-inputting the photosensitive element data into the processing unit for comparison or similarity matching of the etched morphology as a final quality confirmation.

[0047] If the AI ​​algorithm determines that the laser refining process "fails" in step S104, the process proceeds to step S107. To avoid potential misjudgments or edge cases by the AI, a manual review mechanism is introduced in step S107. Operators or engineers will review the substrate that failed the AI ​​assessment and its related testing information (such as imaging images, AI analysis data, etc.), and conduct a reassessment based on experience and standards. If the manual reassessment determines that the substrate quality is actually acceptable, or that the AI ​​assessment is too stringent or incorrect, the assessment result can be corrected to "pass," and the process proceeds to step S105 for etching. If the manual reassessment finds that the laser refining process does indeed have problems, the assessment result remains "fail," and the process proceeds to step S108.

[0048] If the substrate is deemed unsuccessful in step S107, step S108 will determine whether the defect can be remedied through rework. This depends on the type and severity of the defect, as well as the feasibility of the process. If the determination is "yes" (rework is possible), it indicates that the laser re-refinement parameters may be slightly off, have local defects, or be missed, allowing for re-refinement or re-refinement. In this case, the process returns to step S102 to execute the "laser re-refinement step." It should be understood that the first refinement step is performed using the first laser conditions. The laser re-refinement step is performed using the second laser conditions. Furthermore, the second laser conditions may differ from the first laser conditions. For example, the first laser conditions include, but are not limited to, femtosecond lasers, with a wavelength of 1030 nanometers (nm), a pulse energy of 1.5 microjoules (μJ), a repetition rate of 500 kilohertz (kHz), and a scanning speed of 250 millimeters per second (mm / s), employing either rapid dot matrix scanning or large-area helical scanning. The first laser conditions aim to maximize production efficiency while maintaining a certain level of quality.

[0049] After testing, the system found that some of the modified points had insufficient modification depth due to minor inhomogeneities in the substrate material or instantaneous fluctuations in laser output, or that some points were "missed" because the laser beam was blocked by dust. These were determined to be "missed laser modifications" and were identified as requiring rework in step S108. Therefore, the second laser conditions can be set to include, but are not limited to, femtosecond lasers with a wavelength of 1030 nanometers (nm). For points with insufficient depth, the pulse energy may be reduced to 0.8 μJ, but the number of pulses applied to that point may be increased (e.g., by reducing the scanning speed or repeatedly irradiating the point) to more precisely control energy deposition, deepening layer by layer and avoiding over-modification. For "missed" points, a pulse energy similar to that of the first laser conditions (1.5 μJ) may be used, but only that single point is irradiated. The repetition frequency may be maintained at 500 kHz or adjusted according to the required number of pulses. For points requiring reinforcement, the scanning speed will be significantly reduced, or precise single-point irradiation will be used instead. Furthermore, the scanning strategy is no longer a large-scale scan, but rather a high-precision point-to-point positioning and targeted irradiation. In other words, when performing laser re-modification, a "second laser condition" different from the first laser condition may be used, such as adjusting laser parameters to correct defects. If the judgment is "no" (cannot be reworked), the process proceeds to step S109.

[0050] In step S109, if the defects of the substrate are determined to be irreparable by rework, it indicates that the laser refining has failed. The substrate will be deemed scrap and removed from the production line to avoid wasting resources in subsequent processes.

[0051] Figure 2 The diagram shows a laser modification step in the manufacturing process of an electronic device. Figure 3 The diagram illustrates the etching step in a method for manufacturing an electronic device. To make the invention readily apparent to those skilled in the art, details of the manufacturing steps (including preliminary steps) for through-glass vias (TGVs) are described below. First, a substrate input is performed. This step corresponds to the step S101 described earlier, where a substrate to be processed is provided. The substrate is typically a transparent or translucent material such as glass. Next, prior to the main laser modification step, embodiments further include providing a protective layer on one side of the substrate. The main purpose of providing this protective layer is to reduce defects that may occur in subsequent processes. The protective layer may be bonded to or cover the substrate. According to some embodiments, the protective layer may be omitted.

[0052] Next, a substrate thinning step is performed. In some embodiments, after providing the protective layer 20, or as part of the pretreatment of the substrate 10, a thinning process may be performed on the substrate 10. The purpose of the thinning process is to adjust the substrate 10 to a specific thickness required for the final product. The thinning process can be performed by methods such as grinding, polishing, or chemical etching to prepare for subsequent laser modification. Next, a laser modification step is performed. Please refer to [link to previous text]. Figure 2 The laser refining step corresponds to the first refining step described in the previous flowchart S102. In this stage, a laser source is used to irradiate the substrate 10 covered with the protective layer 20 to form a laser-refined region 10a within the substrate 10. It should be understood that the protective layer 20 protects the surface of the substrate 10 from thermal damage or debris contamination that may be caused by direct laser irradiation, thereby suppressing the generation of surface defects. The laser beam penetrates the substrate 10 to form the desired laser-refined region 10a. The laser-refined region 10a is a pre-defined path for subsequent etching to form through-holes.

[0053] Next, the protective layer removal step is performed. After the laser modification step, the protective layer 20 originally covering the substrate 10 needs to be removed. The removal method can be determined according to the material properties of the protective layer 20, for example, by ultraviolet light irradiation, heating, or any other suitable method. With the protective layer 20 removed from the substrate 10, the laser-modified substrate 10 and its internal laser-modified region 10a are exposed. The protective layer removal step ensures that subsequent etching processes can directly target the laser-modified region 10a. Next, an etching step is performed to form through-holes. Please refer to [link to relevant documentation]. Figure 3 After removing the protective layer 20, an etching step is performed on the substrate 10. This step corresponds to the previous flowchart S105, whereby the laser-modified region 10a is selectively removed using a suitable etchant (wet or dry) to form a through-hole 10b in the substrate 10. Because the material properties of the laser-modified region 10a have been altered, its etching rate is much higher than that of the unmodified substrate material, thus allowing for the precise formation of a through-hole 10b with the desired aspect ratio.

[0054] It should be understood that various surface defects may occur during the processing of glass substrates, especially without proper protection. The protective layer 20 in the embodiment helps to suppress the formation of these defects. However, these defect types may include: bubbles, pits, bumps, and scratches. Bubbles may be caused by gases generated inside the material or adhering to the surface during processing. Pits are tiny depressions on the substrate surface. Bumps are tiny protrusions on the substrate surface. Scratches are linear damage to the substrate surface caused by mechanical action. The detection system and method of the present invention can detect these and other internal defects before etching and determine whether rework is required.

[0055] Figure 4 The diagram shows a method for manufacturing an electronic device in which the outline of a laser-modified region 10a and scratches on a substrate are detected using a first lateral incident light E1. Figure 4 This demonstrates part of the principle of how the detection system acquires detection information related to the substrate state in step S103. For example... Figure 4 As shown, when the first lateral incident light E1 is introduced into the substrate 10 from one side, the light propagates inside the substrate. If there are scratches on the surface or inside the substrate 10, the propagation path of the first lateral incident light E1 will be significantly changed when it encounters a scratch. Some of the light may be scattered due to the rough surface or cross-section of the scratch. For example, Figure 4 The scattered light paths L1 and L2 are schematically drawn. These scattered lights may escape from the substrate upwards or in other directions and be captured by the photosensitive element in the lens 12 located above the substrate. Another portion of the light may not be able to penetrate along the expected path due to obstruction or refraction by scratches, or its intensity may be attenuated.

[0056] Furthermore, because the material properties of the laser-modified region 10a have been altered by the laser, its optical properties (such as refractive index and absorptivity) differ from those of the surrounding unmodified substrate material. Therefore, when the first lateral incident light E1 encounters the boundary or interior of the laser-modified region 10a, refraction, reflection, or scattering will also occur. This allows the outline of the laser-modified region 10a to be highlighted. Figure 4 The enlarged view on the right schematically shows the outline of the modified area, whose edges may form specific optical contrasts, facilitating identification and measurement by the detection system. By analyzing the distribution, intensity changes, or specific patterns of light received by the photosensitive element, the processing unit 70 (e.g., ...) Figures 6 to 8 As shown, not shown Figure 4 This allows us to determine whether scratches exist, their location, and approximate severity, and to assess whether the contour of the laser-modified region 10a meets expectations.

[0057] Figure 5 The diagram shows a method for manufacturing an electronic device in which a first lateral incident light is used to detect perforated areas and defects on a substrate. Figure 5 This further illustrates the details of how the detection system acquires detection information related to the state of the substrate 10 in step S103. For example... Figure 5 As shown, when the first lateral incident light E1 is introduced into the interior of the substrate 10 from one side, the propagation of the first lateral incident light E1 will be affected by various features and defects on the substrate 10. Figure 5Several scenarios are illustrated schematically. For example, if a crack exists on the substrate 10, the first lateral incident light E1 will experience interruption, scattering, or refraction when it encounters the crack, forming detectable optical features. Even minute surface morphological changes on the substrate 10, such as microbumps and pits, can disturb the first lateral incident light E1, even at the micrometer level. This can, for example, produce specific scattering patterns or shadow effects.

[0058] For the etched perforation 10b, or the laser-modified area formed after laser modification, its boundary and internal structure are different from the optical properties of the surrounding substrate material. Therefore, the intensity and path of the first lateral incident light E1 will change when it passes through or surrounds these areas. Figure 5 The enlarged view on the right schematically illustrates how this optical change can be used to measure the inner aperture (W). small ) and outer aperture (W large These dimensions are important parameters for evaluating the quality of perforated or modified areas. Figure 4 The principle is similar; some light may be scattered onto the substrate 10 due to these defects or features and captured by the photosensitive element of the lens 12. By analyzing these optical changes, the processing unit 70 (such as...) Figures 6 to 8 As shown, not shown Figure 5 The system can identify and locate defects such as cracks, micro-bumps, and pits, and can also measure the critical dimensions of the perforated area to determine whether it meets process specifications. Furthermore, the detection method described in this embodiment can not only evaluate the size of a single perforated area, but also measure the distance between multiple adjacent perforated areas. Using multiple feature points that may be included in the overall image acquired by the first lateral incident light E1 and the lens 12, the processing unit can identify the center position or edge contour of each of the multiple perforated areas 10b (or laser-modified areas 10a). Then, based on these located feature points, the processing unit can calculate the relative distance between them, thereby accurately obtaining the distance value between them, and compare this measurement value with a preset design standard to determine whether the distance meets specifications.

[0059] Figure 6 The diagram shown is an architectural representation of the optical detection system 100 according to a first embodiment of the present invention. Figure 6 As shown, the optical detection system 100 includes at least one first light source 11 disposed on one side of the substrate 10. It should be understood that, in this invention, the substrate 10 can be considered a specific example of a "transparent test object," and therefore, the measurement of the substrate 100 by the optical detection system 100 can be generally applied to the measurement of any transparent test object that meets specific conditions. In one embodiment, the "transparent test object" can be defined as a material having a white light transmittance greater than 75%. For ease of subsequent explanation, the following embodiments will continue to use the substrate 10 as a representative transparent test object.

[0060] In this embodiment, the first light source 11 can be an LED light bar. The LED light bar may include multiple LEDs of different colors, such as red, green, and blue LEDs. By adjusting the luminous intensity ratio of each LED, light source color mixing can be performed to generate a first lateral incident light E1 with optimal transmittance or contrast, based on the material properties of the substrate 10 or the type of defect to be detected. The wavelength of the first lateral incident light E1 generated by the first light source 11 is selectable; for example, its wavelength range can be from 360 nm to 830 nm. Furthermore, the first light source 11 is positioned along the normal direction of the substrate 10 (Z direction, e.g., ...). Figure 6 The height (as shown) is adjustable, for example, fine-tuned within a range of 0 to 2 mm, to optimize the angle and position of light entering the substrate 10. To ensure detection stability and avoid direct contact between the substrate 10 and the fixture, the exposed edge height of the fixture supporting the substrate 10 is at least greater than 1 cm. Furthermore, as... Figure 6 As shown, the optical inspection system 100 may also optionally include a second light source 111 to provide illumination from the other side of the substrate 10 for more comprehensive inspection.

[0061] The optical inspection system 100 may further include a lens 12 and a camera 30 (containing a photosensitive element), located above the substrate 10 or at another suitable light-collecting position. The lens 12 is used to collect the output light E2 that passes through or is reflected from the interior or surface of the substrate 10 and forms an image. The optical inspection system 100 also includes a processing unit 70 and a memory 80. The processing unit 70 is coupled to the camera 30 and the memory 80. In operation, when the first lateral incident light E1 generated by the first light source 11 is introduced into the interior of the substrate 10, the first lateral incident light E1 will interact with the laser-modified region 10a or any defects that may exist inside the substrate 10. The lateral incident light referred to in this invention is perpendicular to the Z-direction. Due to the difference in refractive index between the laser-modified region or defect and the substrate 10 body, or due to scattering or absorption of light caused by defects, the output light E2 will exhibit identifiable changes in optical characteristics (such as intensity and distribution pattern). Therefore, after the photosensitive element captures the image formed by this output light E2, the detection information represented by the image can be transmitted to the processing unit 70. The processing unit 70 can then execute the rule base or artificial intelligence algorithm stored in the memory 80 to analyze the detection information, thereby determining whether the quality of the laser-modified area 10a or the substrate 10 is abnormal, that is, whether the laser modification has passed the inspection.

[0062] Figure 7 The diagram shown is an architectural representation of the optical detection system 200 according to a second embodiment of the present invention. Figure 7As shown, the optical detection system 200 also includes at least one first light source 11. In this embodiment, it may be a light-emitting diode light stripe, having the characteristics described above. Figure 6 The features in the embodiment may include, for example, light-emitting diodes of different colors such as red, green, and blue, which are used to mix light sources by adjusting their luminous intensity ratios, thereby generating a first lateral incident light E1 optimized according to the material properties of the substrate 10 or the type of defect to be detected. Its wavelength is also selectable, for example, ranging from 360 nanometers to 830 nanometers.

[0063] Unlike the optical inspection system 100, the optical inspection system 200 includes a collimating lens 40 and a grating structure 50 arranged sequentially along the optical path between the first light source 11 and the substrate 10. The collimating lens 40 collimates the light emitted from the first light source 11, making it parallel light or a beam with a specific divergence angle, ensuring that the light illuminating the side of the substrate 10 is more uniform and consistent. The grating structure 50, following the collimating lens 40, further adjusts or shapes the light pattern or spot characteristics of the first lateral incident light E1. For example, the grating structure 50 can produce dotted (circular) spots, one-dimensional linear spots, or two-dimensional planar spots. This helps in the detection of specific types of defects or improves the efficiency of scanning inspection. The optical inspection system 200 also includes a lens 12, a camera 30 (containing a photosensitive element), a processing unit 70, and a memory 80. The functions of these components are similar to... Figure 6 The optical detection system 100 in this embodiment is similar, used to capture the output light E2, form an image, and perform AI algorithm analysis and judgment. Similarly, the first light source 11 (light-emitting diode stripe) is along the normal direction of the substrate 10 (Z direction, e.g., ...). Figure 7 The height (as shown) is adjustable, for example, fine-tuned within a range of 0 to 2 mm, to optimize the angle and position of light entering the substrate 10. To ensure detection stability and avoid direct contact between the substrate 10 and the fixture, the exposed edge height of the fixture supporting the substrate 10 is at least greater than 1 cm. Furthermore, as... Figure 7 As shown, the optical inspection system 200 may also optionally include a second light source 111 to provide illumination from the other side of the substrate 10 for more comprehensive inspection.

[0064] To perform a comprehensive inspection of the entire substrate 10 or its multiple laser-modified regions 10a, the optical inspection system 200 may be configured with a scanning mechanism. For example, in some embodiments, if the light spot formed by optical elements such as the grating structure 50 is dot-shaped (circular), the first light source 11 (and its associated optical components, such as the collimating lens 40 and the grating structure 50) can be designed to move and scan along one direction (e.g., the Y-axis direction) of the substrate 10, while the camera 30 and its lens 12 move and scan synchronously along another orthogonal direction (e.g., the X-axis direction) of the substrate 10. Alternatively, the light source and camera can be fixed, and the substrate 10 can be carried by a moving platform for two-dimensional scanning in the XY plane. In this way, all target regions on the substrate 10 can be inspected sequentially, and the detection information of each region can be transmitted to the processing unit to generate an overall inspection map. Figure 7 The detection principle involves utilizing the interaction between the shaped first lateral incident light E1 and the internal structure and defects of the substrate to generate an output light E2 that can be analyzed. Because... Figure 7 The detection principle is similar to that of the aforementioned embodiments, so the details will not be repeated here.

[0065] Figure 8 The diagram shown is an architectural diagram of the optical detection system 300 according to the third embodiment of the present invention. Figure 8 As shown, the optical inspection system 300 includes at least one first light source 11, which is a laser light source in this embodiment. Compared to a light-emitting diode (LED) light strip, a laser light source can provide a beam with higher intensity, better directionality, and monochromaticity. The wavelength of the first lateral incident light E1 generated by the laser light source is also selectable, for example, ranging from 360 nm to 830 nm, to adapt to the characteristics of different substrate 10 materials and inspection requirements. Similar to the aforementioned embodiment, the height of the first light source 11 along the normal direction (Z direction) of the substrate 10 can also be adjusted, for example, within the range of 0 to 2 mm, to optimize the light introduction angle. Furthermore, the exposed edge height of the fixture supporting the substrate 10 is at least greater than 1 cm to avoid unnecessary contact. In addition, as Figure 8 As shown, the optical inspection system 300 may also optionally include a second light source 111 to provide illumination from the other side of the substrate 10 for more comprehensive inspection.

[0066] In the optical inspection system 300, an optical assembly including a beam expander 60, a collimating lens 40, and a grating structure 50 is arranged in sequence along the optical path between the first light source 11 (laser source) and the substrate 10. First, the beam expander 60 expands the original laser beam emitted from the laser source 11, adjusting it to a beam diameter suitable for subsequent optical element processing or meeting the requirements of a specific illumination area. Next, the expanded beam enters the collimating lens 40 and is collimated into a parallel beam with a very small divergence angle to ensure the uniformity of long-distance propagation or subsequent grating operation. Finally, the collimated laser beam passes through the grating structure 50. The grating structure 50 modulates the wavefront of the beam to generate a first lateral incident light E1 with specific spot characteristics. For example, the beam can be shaped into an extremely fine linear or dotted spot to facilitate high-resolution scanning, or a specific two-dimensional rectangular pattern can be formed to enhance sensitivity to certain morphologies or defects.

[0067] The optical inspection system 300 also includes a lens 12, a camera 30 (containing a photosensitive element), a processing unit 70, and a memory 80. The functions of these components are the same as in the aforementioned embodiments (e.g., ...). Figure 6 , Figure 7 Similar to that in the previous example, it is used to capture the output light E2 after the interaction inside the substrate 10, form an image, and perform artificial intelligence algorithm analysis and judgment.

[0068] Similarly, to perform a comprehensive inspection of the entire substrate 10 or its multiple laser-modified regions 10a, the optical inspection system 300 can also be configured with a scanning mechanism. For example, if the light spot formed by the light source system (including the beam expander 60, collimator 40, and grating structure 50) is dot-shaped (circular), the first light source 11 (and its series-connected optical components) can be designed to move and scan along one direction of the substrate 10 (e.g., the Y-axis direction), while the camera 30 and its lens 12 move and scan synchronously along another orthogonal direction of the substrate 10 (e.g., the X-axis direction), scanning all laser-modified regions 10a row by row. Alternatively, a fixed light source and camera can be used, while a moving platform carries the substrate 10 for XY two-dimensional plane scanning. The collected detection information of each region is then integrated by the processing unit to generate an overall detection map. The basic principle of detection using a precisely shaped first lateral incident light E1 is similar to that of the aforementioned embodiments. Figure 8 The detection principle involves utilizing the interaction between the shaped first lateral incident light E1 and the internal structure and defects of the substrate to generate an output light E2 that can be analyzed. Because... Figure 8 The detection principle is similar to that of the aforementioned embodiments, so the details will not be repeated here.

[0069] In the above, as Figures 6 to 8In the embodiments shown, the lens 12 of the camera 30 defines a specific field of view (FOV). The field of view refers to the actual area that the lens 12 can clearly image at a specific working distance, and its size determines the area of ​​the substrate 10 that can be observed in a single image capture. In practical applications, the size of the field of view is designed according to the required resolution, the optical magnification of the lens, and the size of the photosensitive element. Since the area of ​​the substrate 10 to be detected, or the total range of the multiple laser-modified regions 10a distributed on it, is usually larger than the field of view that the lens 12 can capture in a single shot, the scanning mechanism described above (e.g., moving the substrate 10, or simultaneously moving the first light source 11 and the camera 30) utilizes this field of view as the basic imaging unit. The lens 12 can gradually and continuously move the relative position of the field of view based on a region-by-region approach, sequentially capturing multiple local images of the entire target surface. These sequentially acquired area images are then transmitted to processing unit 70 for individual analysis, defect identification, or further stitching and integration, thereby achieving comprehensive inspection of a large-area substrate and generation of an overall inspection map. In another embodiment of area-by-area scanning, if via a first light source 11 and possibly configured optical elements (e.g., Figure 7 or Figure 8 The first lateral incident light E1 generated forms a line-shaped spot on or within the substrate 10, allowing for a more efficient scanning strategy. In this case, the line-shaped spot is typically designed to extend and provide illumination along one dimension of the substrate 10 (e.g., the Y-axis direction, i.e., spanning the width or a portion of the substrate). In this way, by simply moving the lens 12 along another dimension (e.g., the X-axis direction) approximately perpendicular to the extension direction of the line-shaped spot, it is possible to scan and image the substrate areas illuminated or interacting with by the line-shaped spot region by region. This scanning method can acquire information over a wider strip of area with each lens movement, thereby effectively improving the detection speed and efficiency of large-area substrates.

[0070] In other embodiments, the optical inspection system may also be configured with multiple cameras. These cameras may be arranged, for example, in a 3D array perpendicular to the main scanning direction of the substrate, or in a 2D array to cover a large inspection area. By using multiple cameras, the optical inspection system can simultaneously capture images of a wider or more angular substrate area in a single scan path (if there is movement) or in a single exposure (if it is a static large-area inspection). In this way, the overall substrate inspection throughput and coverage can be effectively improved without significantly increasing the overall scan time, and even in some cases reducing the requirement for the movement speed of a single scan axis.

[0071] The optical detection system of the present invention 100 to 300 (e.g.) Figures 6 to 8 The detection method (shown) can detect scratches, cracks, dimensions, and contours mentioned above, and also has the ability to evaluate the surface roughness of the substrate 10. Examples of measurable roughness parameters and their detection ranges include: arithmetic average roughness of approximately 0.01 micrometers (μm) to 0.5 micrometers, or mean roughness. These parameters can be used to characterize the microscopic contour changes of the surface of the substrate 10. The detection principle can also utilize the interaction between lateral incident light and the surface of the substrate 10. When the first lateral incident light E1 (or the second lateral incident light) irradiates the surface of the substrate 10, the microscopic irregularities (i.e., roughness) of the surface will cause scattering of the incident light to varying degrees and angles. Generally speaking, a rougher surface will cause light to scatter in a wider range of directions, and the intensity distribution of the scattered light will be more diffuse. A smoother surface will mainly produce specular reflection or more concentrated scattering. Lens 12 and camera 30 (containing a photosensitive element) are responsible for collecting the scattered or reflected light modulated by surface roughness and forming an image. Subsequently, processing unit 70 can infer and quantify the surface roughness value by analyzing the spatial distribution of light intensity, the extent of light spot expansion, the light intensity at a specific scattering angle, or by utilizing more complex image texture analysis, artificial intelligence algorithms, etc. It should be understood that, in one embodiment, the optical inspection system can ultimately present the analyzed roughness information in a visual manner. For example, a roughness distribution map can be generated, where different colors or grayscale levels directly correspond to different roughness measurements or roughness levels. Generating a roughness distribution map allows operators or automated systems to intuitively understand the overall condition, uniformity, and spatial distribution of the substrate surface roughness in specific areas.

[0072] Figure 9 The diagram shown is a structural diagram of an electronic device according to an embodiment of the present invention. Please refer to [link / reference]. Figure 9 . Figure 9The diagram shows a cross-sectional view of an electronic device. This structure can be an electronic package, provided, for example, through wafer-level package (WLP), panel-level package (PLP), system-in-package (SiP), or other similar multi-layered heterogeneous integration modules. It can be chip-first or chip-last / RDL-first, integrating various components to achieve specific electronic functions. Figure 9 As shown, the overall structure of the electronic device can be constructed by stacking from the bottom up. The bottom layer can be a circuit board, such as a printed circuit board, which provides the mechanical support base for the entire device and contains the circuitry for external connections. The electronic device can achieve electrical and mechanical connections to the circuit board PCB through the bottom connector CE1, such as a solder ball grid array (BGA) or other surface mount technology (SMT) contacts. A buffer section BFF1 can cover the connector CE1. The buffer section BFF1 can be an insulating material, composed of elastic material or a specific structure, used to absorb mechanical or thermal stress and protect the reliability of the solder joints of the connector CE1. The structure extending upwards from the connector CE1 can include a multilayer sub-substrate SS. A conductive material M3P and an insulating layer IL2 for interlayer isolation can be built on the sub-substrate SS.

[0073] The electronic device also includes a sub-substrate PL. A redistribution layer (RDL) may be disposed below (or around) the sub-substrate PL. The main function of the RDL is to rewire the fine-pitch contacts of the upper-layer active and passive components to contacts with wider pitches on the sub-substrate PL or SS, achieving high-density interconnection. The RDL can be composed of multiple layers of conductive materials, such as conductive materials MP and M2P, and multiple layers of insulating layers, such as insulating layers IL and IL1, stacked alternately. Figure 9The conductive materials CL and CV shown can serve as vertical electrical connections between these different conductive layers, for example, as filler material in vias or forming conductive pillars. To further protect the structure, the electronic device can also be configured with other buffers. For example, buffer BFF2 can surround the edges of vias on the multilayer sub-substrate SS to protect the vias. Buffer BFF3 can be located between the sub-substrate PL and the redistribution layer RDL to cover the connector CE3. Multiple active and / or passive components (collectively referred to as active / passive components EU and SE) can be mounted or embedded on or within the sub-substrate PL. For example, the active component EU can be an integrated circuit (IC), and the passive component SE can be a resistor, capacitor, inductor, etc. These active / passive components EU and SE can be electrically connected to the underlying redistribution layer RDL or other circuit layers via the connector CE3. Additionally, an intermediate layer IST can be provided on or around the sub-substrate PL and the active / passive components SE. The upper part of the intermediate IST layer may also include a connector CE2 for connecting to other modules, test points, or as part of the package. Furthermore, in electronic devices, the outermost layer may be a package layer to seal and protect all internal electronic components from external environmental factors such as moisture, dust, and mechanical damage.

[0074] It should be understood that the sub-substrate PL and the multilayer sub-substrate SS of the electronic device can be applied to the glass via manufacturing method and optical inspection method mentioned in the foregoing embodiments. For example, the sub-substrate PL and the multilayer sub-substrate SS themselves can serve as the basis for performing the "first modification step" (such as step S102 and...). Figure 2 The target substrate 10 (as shown). For example, multiple laser-modified regions 10a can be formed on the sub-substrate PL and the multilayer sub-substrate SS using a laser to prepare for subsequent etching to form glass vias. After laser modification and before etching, steps such as S103 and... Figures 4 to 8 The disclosed optical inspection system (100, 200, or 300) and method inspect the laser-modified region 10a on the sub-substrate PL and the multilayer sub-substrate SS. In other words, the manufacturing and inspection methods of the aforementioned embodiments can be effectively applied to applications such as... Figure 9 The processing and quality control process of the internal substrates (such as sub-substrate PL and multilayer sub-substrate SS) in the electronic device shown.

[0075] exist Figure 9In this design, the edges of the sub-substrate plate (PL) can be designed as arc-shaped or curved. Compared to traditional right angles or sharp corners, this arc-shaped or curved edge design has the following advantages: First, arc-shaped or curved edge design reduces stress concentration. Sharp corners easily become stress concentration points, especially when subjected to thermal expansion and contraction due to temperature changes or external mechanical stress, which can easily lead to cracking. Arc-shaped edges can distribute stress more evenly, thus significantly reducing the risk of cracking or breakage of the sub-substrate plate (PL) edges (especially when it is made of brittle materials such as glass). Second, arc-shaped or curved edge design can improve packaging reliability. By reducing potential crack initiation points and stress failure points, arc-shaped or curved edge design can improve the mechanical strength, fatigue resistance, and long-term reliability of the entire electronic device. Third, arc-shaped or curved edge design can improve molding process yield. In injection molding or other overmolding processes, curved or rounded edges facilitate smoother flow of the molding material (such as epoxy resin), reducing the chance of defects such as bubbles, voids, or uneven filling, thereby improving encapsulation quality and yield. Therefore, Figure 9 In some embodiments, the arc or curved edge design of the sub-substrate PL can improve the structural stability, durability, and process yield of the electronic device, and is particularly suitable for high-end packaging applications with high reliability requirements or high process stress. According to some embodiments, the electronic device referred to in this invention may include a chip on wafer on substrate (CoWoS) packaging structure, system on a chip (SoC), system in a package (SiP), antenna in package (AiP), co-packaged optics (CPO), or various combinations of the above devices, but is not limited thereto.

[0076] Figure 10 The diagram shown is a structural diagram of an electronic device according to another embodiment of the present invention. Please refer to [link / reference]. Figure 10 . Figure 10 The diagram shown is a cross-sectional view of an electronic device according to another embodiment of the present invention. Figure 10 The overall architecture, main components, and basic functions of the electronic device described herein are similar to those of the aforementioned devices in many respects. Figure 9 The electronic devices shown are similar. For the sake of brevity, these are similar to... Figure 9 The components that are identical or have corresponding functions in the embodiments will not be described in detail here, and their connection relationships can be referred to the aforementioned examples. Figure 9 Explanation. Figure 10 The most significant difference between the electronic device shown and the aforementioned embodiments lies in the edge design of the sub-substrate PL. Figure 10In electronic devices, the edges of the sub-substrate PL are designed with a wavy shape or an undulating / uneven shape. This edge profile, with its undulating, non-straight geometric features, replaces the traditional straight-cut edges or... Figure 9 The embodiments describe simple arc / curved edges. It should be understood that the edges of the sub-substrate PL employ a wavy or uneven design, which offers technical advantages similar to... Figure 9 The advantages of curved edges are similar in the embodiments, and in some aspects, they may provide further reinforcement. In the embodiments, the wavy or undulating edge design provides superior stress dispersion and reduction. The wavy or undulating edge profile, due to its geometric discontinuity and multiple curvature variations, can more effectively interrupt the stress propagation path than a simple curve, dispersing concentrated stress generated during manufacturing processes (such as substrate cutting, encapsulation) or subsequent use (such as temperature cycling, mechanical loading) more evenly over a wider edge area. This design can create more stress relief points or change the stress concentration pattern, thereby significantly reducing the probability and propagation tendency of microcracks at the edges of the sub-substrate PL (especially brittle materials such as glass). Furthermore, the wavy or undulating edge design improves crack propagation resistance. Even under extreme stress conditions, if an initial microcrack unfortunately occurs at the edge of the sub-substrate PL, the wavy or undulating surface profile can make the crack propagation path more tortuous and irregular. This increases the fracture energy required for crack propagation and may cause the crack to deflect or terminate during propagation, thereby inhibiting or effectively delaying overall crack propagation and further improving the durability and reliability of the device in harsh environments. Therefore, Figure 10 The wavy or uneven edge design of the sub-substrate PL in the embodiments can also improve the structural stability, durability and process yield of electronic devices, and is especially suitable for application scenarios with extremely high requirements for mechanical reliability, impact resistance or long life.

[0077] In summary, this invention discloses a method for manufacturing an electronic device and an optical inspection system. The optical inspection system utilizes side-incident light technology combined with artificial intelligence algorithms to perform real-time internal and surface inspection of the substrate after the first laser modification step, prior to etching. The optical inspection system may include specific light sources (such as LED light stripes or laser light sources), optical shaping components (such as collimating lenses, beam expanders, and grating structures), lenses, and processing units. The optical inspection system can be combined with various spot illumination methods or multi-camera configurations, enabling it to effectively meet the comprehensive inspection needs of large-size substrates, achieving efficient and accurate inspection. Furthermore, the arc-shaped, wavy, or uneven edge design of the sub-substrate in the electronic device helps reduce stress concentration and enhance structural reliability. Moreover, the optical inspection system can accurately identify multiple features such as scratches, cracks, surface roughness, and critical dimensions, and determine whether rework and process parameter adjustments are necessary, effectively overcoming the shortcomings of previous top-view inspections, thus significantly improving production yield and overall efficiency.

[0078] The above description is merely an embodiment of the present invention and is not intended to limit the invention. Various modifications and variations can be made to the present invention by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the scope of protection of the present invention.

Claims

1. A manufacturing method of an electronic device, characterized by, include: Provide a substrate; A first modification step is performed on at least a portion of the substrate; A first lateral incident light is generated so that the first lateral incident light is guided into the interior of the substrate; Inspect the substrate after the first modification step to obtain detection information related to the state of the substrate; as well as Based on the detection information, it is determined whether the substrate needs to undergo a rework process. When it is determined that the substrate needs to undergo the rework process, a laser re-modification step is performed on the substrate. When it is determined that the substrate does not need to undergo the rework process, an etching step is performed on the substrate to form at least one through hole in the substrate.

2. The manufacturing method as described in claim 1, characterized in that, The first modification step is performed using a first laser condition, and the laser re-modification step is performed using a second laser condition, which is different from the first laser condition.

3. The production method according to claim 1, wherein The wavelength range of the first lateral incident light is 360 nanometers to 830 nanometers.

4. The production method according to claim 1, wherein Also includes: A grating structure is used to adjust the beam pattern of the first lateral incident light.

5. An optical detection system, characterized in that, include: A transparent test object; A first light source is disposed on one side of the transparent object to be tested to provide a first lateral incident light; as well as A lens is positioned on the transparent object to be tested; After at least a portion of the transparent test object undergoes a first modification step, the first light source generates the first lateral incident light to guide the first lateral incident light into the interior of the transparent test object. The lens examines an image of the transparent test object after the first modification step on a photosensitive element to obtain detection information related to the state of the transparent test object, and the detection information is used to determine whether the transparent test object needs to undergo a reprocessing.

6. The optical detection system of claim 5, wherein, Also includes: A memory for storing at least one reference laser pattern data; as well as A processing unit is coupled to the lens and the memory; The processing unit receives the detection information and executes an artificial intelligence algorithm to compare the detection information with the reference laser pattern data, thereby determining whether the transparent test object needs to undergo the rework process.

7. The optical detection system as described in claim 6, characterized in that, The processing unit determines, based on the detection information, whether there is at least one scratch or at least one crack on the transparent test object, and evaluates the surface roughness of the transparent test object, as well as the distance between two adjacent perforated areas after the first modification step, and determines whether the distance meets a preset standard.

8. The optical inspection system as described in claim 5, characterized in that, Also includes: A second light source is disposed on the other side of the transparent object to be tested, for providing a second lateral incident light to be introduced into the interior of the transparent object to be tested; The lens is further used to examine the imaging of the second lateral incident light on the photosensitive element.

9. The optical inspection system as described in claim 5, characterized in that, Also includes: A grating structure is disposed between the first light source and the transparent object to be tested, for adjusting the light pattern of the first lateral incident light.

10. The optical detection system of claim 5, wherein, Also includes: A collimating lens is positioned between the first light source and the transparent object to be tested to collimate the first lateral incident light. The first light source is a light-emitting diode (LED) strip.

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