A method of source-drain region doping for two-dimensional semiconductor transistors

By depositing a single metal layer in the source and drain regions of a two-dimensional semiconductor transistor and then naturally oxidizing it to form a metal oxide doped layer, the problem of stable doping was solved, the carrier mobility was improved and the contact resistance was reduced, and a high-performance, low-power logic transistor was fabricated.

CN122318237APending Publication Date: 2026-06-30UNIV OF SCI & TECH OF CHINA
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
UNIV OF SCI & TECH OF CHINA
Filing Date
2026-03-19
Publication Date
2026-06-30

AI Technical Summary

Technical Problem

Existing technologies make it difficult to stably dopant the source and drain regions of two-dimensional semiconductor transistors, leading to a decline in device performance, particularly an increase in carrier mobility and contact resistance.

Method used

Electron beam evaporation is used to deposit a single metal layer in the source and drain regions, and then the metal oxide doped layer is formed by natural oxidation. The charge transfer doping phenomenon of the metal oxide is utilized, and photolithography is used to dop the selected regions.

Benefits of technology

It improves carrier mobility, reduces contact resistance, and enables the fabrication of high-performance, low-power logic transistors. The process is simple and controllable, making it suitable for large-scale fabrication.

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Abstract

This invention discloses a method for doping the source and drain regions of a two-dimensional semiconductor transistor, belonging to the field of semiconductor device technology. The method includes the following steps: depositing a bottom electrode and a back gate dielectric layer on a substrate; transferring two-dimensional semiconductor material onto the back gate dielectric layer and forming a channel layer; defining a source region and a drain region on the top surface of the channel layer; depositing a single-element metal layer in the source and drain regions by electron beam evaporation; forming a metal oxide doped layer by natural oxidation of the single-element metal layer; and finally depositing the source and drain electrodes on the top surface of the metal oxide doped layer by electron beam evaporation. This invention performs charge transfer doping on the two-dimensional semiconductor material in the source and drain regions using a metal oxide doped layer, which can provide additional electrons to the two-dimensional semiconductor in the source and drain regions, improving the Ii of the device. on This reduces the Schottky barrier of the device, thereby reducing the device's Ro. c The method provided by this invention is simple in process, has extremely low process cost, and high yield.
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