Substrate support unit and substrate processing apparatus
By introducing a grounding ring into the substrate support unit, the capacitive coupling problem caused by the same bias RF power frequency in plasma processing is solved, achieving more stable impedance matching and reducing the risk of electric arc, thus improving the reliability of plasma processing.
CN122318802APending Publication Date: 2026-06-30SYSTEM ENGINEERING MEGA SOLUTION CO LTD
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Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- SYSTEM ENGINEERING MEGA SOLUTION CO LTD
- Filing Date
- 2025-11-03
- Publication Date
- 2026-06-30
AI Technical Summary
Technical Problem
In plasma processing, supplying bias RF power of the same frequency to the center and edge regions of the substrate can lead to increased capacitive coupling, which in turn affects impedance matching and increases the risk of arcing.
Method used
By introducing a grounding ring in the substrate support unit and connecting it to the inside of the second bias electrode, the capacitive coupling between the first and second bias electrodes is reduced, ensuring that the bias RF power is supplied at the same frequency and phase.
Benefits of technology
It effectively reduces the risks of capacitive coupling and electric arcing, ensures the stability of impedance matching, and improves the reliability of plasma processing.
✦ Generated by Eureka AI based on patent content.
Smart Images
Figure CN122318802A_ABST
Abstract
This invention provides a substrate support unit and a substrate processing apparatus that minimize capacitive coupling between bias electrodes. The substrate support unit according to the invention, used in a plasma-utilizing substrate processing apparatus, comprises: a metal plate; a dielectric plate disposed above the metal plate; an insulating ring disposed outside the metal plate; and a focusing ring disposed above the insulating ring. A first bias electrode is embedded inside the dielectric plate, a second bias electrode ring is embedded inside the insulating ring, and a grounding ring is embedded inside the insulating ring, inside the second bias electrode ring.
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