Radio frequency switch and electronic device

By designing switch units arranged along the first direction and reducing the thickness of the gate oxide layer in the RF switch, the problems of large area and high loss of the RF switch are solved, and the performance improvement of the RF switch with smaller area, low loss and good matching is achieved.

CN122339463APending Publication Date: 2026-07-03GUANGZHOU ZENGXIN TECH CO LTD
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Patent Information

Application Number
CN202610443623.9
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2026-04-03
Publication Date
2026-07-03

AI Technical Summary

Technical Problem

Existing RF switches have a large area and significant signal loss, and the matching between the various switching units is poor.

Method used

Design an RF switch in which several switching units are arranged sequentially and connected in series along a first direction. The first switching unit serves as the input signal terminal, and the last switching unit serves as the output signal terminal. Horizontal grid structures are arranged at intervals along a second direction. The width of the horizontal grid decreases as the distance from the signal input terminal increases. The signal transmission speed is improved by thinning the gate oxide layer thickness of the far-end switching unit.

Benefits of technology

This achieves smaller RF switch area, lower loss, and better matching, thus improving the overall performance of the RF switch.

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Abstract

This invention proposes a radio frequency (RF) switch and electronic device, comprising a plurality of switch units arranged sequentially and connected in series along a first direction, each with the same channel conduction capability. The first switch unit serves as the input signal terminal, and the last switch unit serves as the output signal terminal. Each switch unit includes: a transverse gate structure arranged at intervals along a second direction, comprising a gate oxide layer on a substrate and a transverse gate on the gate oxide layer. The width of each transverse gate in the switch unit is the same along the first direction, the length is the same along the second direction, and the thickness of each gate oxide layer is the same. For any adjacent first and second switch units, in the first direction, the spacing between the first switch unit and the signal input terminal is smaller than the spacing between the second switch unit and the signal input terminal, and the width of the transverse gate of the second switch unit is smaller than the width of the transverse gate of the first switch unit. This improves the performance of the RF switch with a smaller area, lower loss, and better matching.
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