A method for preparing a rare earth oxide / gallium oxide polycrystalline thin film having a magnetoresistance effect
By using core-shell structured composite particles and thermal resistance evaporation combined with oxygen-enriched flash calcination, the problems of uniform co-deposition and crystallization quality of rare earth oxide/gallium oxide polycrystalline thin films were solved, realizing efficient and low-cost polycrystalline thin film preparation, which is suitable for magnetic storage, magnetic sensing and spintronic devices.
Patent Information
- Application Number
- CN202610537467.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2026-04-22
- Publication Date
- 2026-07-10
AI Technical Summary
Existing technologies struggle to achieve uniform co-deposition growth of rare-earth oxide/gallium oxide polycrystalline thin films, resulting in poor film crystal quality, insignificant magnetoresistance effect, high preparation costs, and incompatibility with existing semiconductor processes.
Using core-shell structured rare earth oxide/gallium oxide composite particles as evaporation raw materials, combined with thermal resistance evaporation and oxygen-enriched flash calcination, uniform co-deposition of the two materials and improved crystal quality are achieved. By controlling evaporation and high-temperature treatment, a polycrystalline thin film with tight interfacial bonding is obtained.
It achieves uniform co-deposition and high-quality crystallization of rare earth oxide/gallium oxide polycrystalline thin films, significantly improves the magnetoresistance effect, and reduces the preparation cost. It has good process controllability and semiconductor process compatibility, making it suitable for large-scale production.
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Figure CN122358124A_ABST
