A magnetron sputtering device, a thin film preparation method and a PZT thin film

Abstract

This application belongs to the field of thin film preparation, specifically disclosing a magnetron sputtering apparatus, a thin film preparation method, and a PZT thin film. The magnetron sputtering apparatus includes: a target material disposed directly above a substrate, used to sputter and generate an atomic beam with momentum under the action of incident particles; at least a portion of the atoms in the atomic beam are deposited on the substrate to form a thin film; and a shielding member used to shield the atomic beam generated by sputtering in a predetermined area at the center of the target material, and to deflect and scatter the atomic beam generated by sputtering around the predetermined area; when the magnetron sputtering apparatus sputters the substrate, the shielding member is sequentially disposed at a first station and a second station, the first station being located outside the trajectory of at least a portion of the atomic deposition, and the second station being located between the target material and the substrate, shielding a portion of the trajectory of at least a portion of the atomic deposition. This application improves the uniformity of the thin film sputtered by the magnetron sputtering apparatus.

Description

Technical Field

[0001] This application belongs to the field of thin film preparation, specifically relating to the field of semiconductor wafer thin film preparation technology, and more specifically, relating to a magnetron sputtering apparatus, a thin film preparation method, and a lead zirconate titanate (PZT) thin film. Background Technology

[0002] Magnetron sputtering is one of the mainstream technologies in physical vapor deposition (PVD). It boasts advantages such as high tunable deposition rate, low deposition temperature, large deposition area, and the ability to achieve multi-target co-deposition, making it widely used for the deposition of metal, semiconductor, and insulating thin films. In principle, magnetron sputtering relies on an external electric field to ionize Ar gas, forming plasma. The magnetic field on the back of the target then causes the plasma to move in a circular motion under the Lorentz force, bombarding the target surface and causing atoms to detach from the target surface and deposit onto the substrate. During this process, the uniformity of the thin film wafer is a key factor determining the yield of subsequent device fabrication.

[0003] The uniformity of thin films can be mainly divided into thickness uniformity and crystal quality uniformity. Among them, temperature uniformity is a key factor determining the crystal quality of thin films. For example, T. Yoshimura et al. from Osaka Prefecture University, Japan (M. Murase et al. 2020 Jpn. J. Appl. Phys. 59 SPPC05) analyzed the effect of wafer surface temperature gradient on the quality of PZT thin films and found that when the temperature is too high or too low, it will cause an imbalance in the surface Pb ratio, which in turn will lead to the deterioration of film crystallinity and the appearance of a rough surface.

[0004] On the other hand, the uniformity of film thickness is also a key factor affecting its growth quality. Since the back of the target often uses inner and outer ring magnets, the magnetic field lines are denser at the center than at the edges. This non-uniformity in magnetic field distribution leads to a phenomenon where the plasma bombardment of the target exhibits a faster deposition rate near the center along the radial direction of the target, while the rate at the edges is slower. Figure 1 As shown, this leads to increased thickness non-uniformity in the wafer and even causes obvious ring structures on the thin film surface. Current main improvement methods to address this problem include using moving electromagnets to promote uniform plasma bombardment of the target surface and optimizing the gas intake structure and plasma uniformity methods to adjust the thin film sputtering uniformity. However, these methods still suffer from problems such as complex structures, high costs, and the tendency for moving magnetic fields to cause breakdown of oxide insulating targets. Summary of the Invention

[0005] In view of the shortcomings of the prior art, the purpose of this application is to provide a magnetron sputtering device, a thin film preparation method and a PZT thin film, which aims to solve the problem of uneven film thickness obtained by existing magnetron sputtering devices.

[0006] To achieve the above objectives, in a first aspect, this application provides a magnetron sputtering apparatus for sputtering a substrate to form a thin film on the substrate; the apparatus includes: A target material, positioned directly above a substrate, is used to sputter and generate an atomic beam with momentum under the action of incident particles; at least a portion of the atoms in the atomic beam are deposited above the substrate to form a thin film; A shielding component is used to shield the atomic beam generated by sputtering in a preset area at the center of the target material, and to deflect and scatter the atomic beam generated by sputtering around the preset area. When the magnetron sputtering device sputters the substrate, the shielding member is successively set at the first station and the second station. The first station is located outside the trajectory of at least a portion of the atomic deposition, and the second station is located between the target and the substrate, and shields part of the trajectory of at least a portion of the atomic deposition.

[0007] In one possible implementation, when the magnetron sputtering device sputters the substrate, the shielding member is first set at a first station until the thickness of the film sputtered on the substrate is 0.5%-2.5% of the preset sputtering thickness, and then set at a second station until the thickness of the film on the substrate reaches the preset sputtering thickness.

[0008] In one possible implementation, when the shielding member is located at the second station, it is coaxially arranged with the target material.

[0009] In one possible implementation, the shielding member includes a shielding area; the area of ​​the shielding area is 0.97% to 15.50% of the target area and 1.72% to 27.56% of the substrate area. Let the height between the target and the substrate be the first height. When the shielding member is located at the second station, its height from the substrate is in the range of 53.3% to 73.3% of the first height.

[0010] In one possible implementation, the occlusion area is circular when the target material is circular, and the occlusion area is square when the target material is square.

[0011] In one possible implementation, the above-mentioned device further includes: a support platform; The support platform has heating and rotation functions and is used to support the substrate.

[0012] In one possible implementation, the heating function of the support platform is achieved through a graphite heat-conducting plate.

[0013] Secondly, this application provides a method for preparing a thin film, comprising the following steps: Provide substrate; Using the substrate as a substrate, a thin film is prepared on the substrate using the magnetron sputtering apparatus described in the first aspect above.

[0014] Thirdly, this application provides a PZT thin film prepared using the thin film preparation method described in the second aspect above.

[0015] In one possible implementation, the heating temperature range of the support platform is 300°C. o C-700 o C.

[0016] In one possible implementation, the uniformity of the PZT film is less than 9.7%.

[0017] Overall, the technical solutions conceived in this application have the following beneficial effects compared with the prior art: This application provides a magnetron sputtering apparatus, a thin film preparation method, and a PZT thin film. The method utilizes a shielding element below the target to further adjust the radial distribution of sputtered particles along the substrate, resulting in a more uniform deposition rate distribution and improved film thickness uniformity. Furthermore, the heat transfer method is changed from traditional quartz radiation heat transfer to a heating wire thermal radiation-graphite tray solid-state heat transfer to the substrate. The high in-plane thermal conductivity of graphite compensates for the uneven thermal radiation inherent in the heating wire itself. Combined with the rotation of the graphite tray, temperature uniformity is further improved, thereby enhancing the temperature uniformity during thin film deposition. Compared to traditional multi-temperature zone heating self-regulation and moving magnetic fields, the contact heating and shielding element-optimized film uniformity offer the following advantages: First, the film can simultaneously possess uniform thickness and good crystallinity, which is beneficial for subsequent device fabrication. Second, its processing structure is simple, with good repeatability, enabling large-scale mass production. Attached Figure Description

[0018] Figure 1 This is a schematic diagram of the operation of an existing magnetron sputtering device.

[0019] Figure 2 This is a schematic diagram of the operation of the magnetron sputtering apparatus provided in the embodiments of this application. Figure 3 This is a schematic diagram of the shielding component structure provided in the embodiments of this application.

[0020] Figure 4 This is a graph showing the thickness test results of the PZT film in Example 1 provided in this application.

[0021] Figure 5This is a graph showing the thickness test results of the PZT film in Example 2 provided in this application.

[0022] Figure 6 This is a graph showing the thickness test results of the PZT film in Example 3 provided in this application.

[0023] Figure 7 This is a graph showing the thickness test results of the PZT film in Example 4 provided in this application.

[0024] Figure 8 This is a graph showing the thickness test results of the PZT film in Example 5 provided in this application.

[0025] Figure 9 This is a graph showing the thickness test results of the PZT film in Comparative Example 1 provided in this application.

[0026] Figure 10 This is a graph showing the thickness test results of the PZT film in Comparative Example 2 provided in this application.

[0027] Figure 11 This is a graph showing the thickness test results of the PZT film of Comparative Example 3 provided in this application. Detailed Implementation

[0028] To make the objectives, technical solutions, and advantages of this application clearer, the following detailed description is provided in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the scope of this application.

[0029] In the description of this application, it should be understood that the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this application, "multiple" means two or more, unless otherwise explicitly specified.

[0030] Furthermore, throughout this specification, references to "an embodiment"; "an embodiment," "an example," or similar language indicate that a particular feature, structure, or characteristic described in connection with that embodiment is included in at least one embodiment of this application. Therefore, the appearance of the phrase "in one embodiment;" throughout this specification, and similar language, may, but not necessarily, refer to the same embodiment.

[0031] like Figure 2 As shown, this application provides a magnetron sputtering apparatus for sputtering a substrate to form a thin film on the substrate; the apparatus includes: A target material, positioned directly above a substrate, is used to sputter and generate an atomic beam with momentum under the action of incident particles; at least a portion of the atoms in the atomic beam are deposited above the substrate to form a thin film; A shielding component is used to shield the atomic beam generated by sputtering in a preset area at the center of the target material, and to deflect and scatter the atomic beam generated by sputtering around the preset area. In one embodiment, the shielding member includes a shielding area; the area of ​​the shielding area is 0.97% to 15.50% of the target area and 1.72% to 27.56% of the substrate area. Furthermore, such as Figure 3 As shown, the above-mentioned shielding component has a central circular or square shielding area and two conical openings at both ends. The size of the central shielding area is smaller than the diameter of the target material and the width of the cone is smaller than the size of the shielding area. The material can be a high-temperature resistant alloy. The conical openings on both sides of the shielding component are connected to the shielding area by a rounded transition.

[0032] In one embodiment, the blocking area is circular when the target material is circular, and the blocking area is square when the target material is square.

[0033] When the magnetron sputtering device sputters the substrate, the shielding member is successively set at the first station and the second station. The first station is located outside the trajectory of at least a portion of the atomic deposition, and the second station is located between the target and the substrate, and shields part of the trajectory of at least a portion of the atomic deposition.

[0034] In one embodiment, the height between the target and the substrate is defined as a first height, and when the shielding member is located at the second station, its height from the substrate ranges from 53.3% to 73.3% of the first height. Preferably, when the shielding member is located at the second station, it is coaxially arranged with the target.

[0035] In one embodiment, when the magnetron sputtering device sputters a substrate, the shielding member is first set at a first station until the thickness of the film sputtered on the substrate is 0.5%-2.5% of the preset sputtering thickness, and then set at a second station until the thickness of the film on the substrate reaches the preset sputtering thickness.

[0036] In one embodiment, the above-mentioned device further includes: a support platform; The support platform has heating and rotation functions and is used to support the substrate.

[0037] In one embodiment, the heating function of the support platform is achieved through a graphite heat-conducting plate. The following embodiment uses a graphite heat-conducting plate as an example for illustration.

[0038] Furthermore, the PZT thin film prepared using the aforementioned magnetron sputtering apparatus. The heating temperature range of the stage during PZT thin film preparation is 300°C.o C-700 o C. The uniformity of the prepared PZT film is less than 9.7%.

[0039] It should be noted that the heating temperature of the aforementioned support stage can be set based on experience, with the aim of obtaining PZT film of better quality.

[0040] In one specific embodiment, a method for preparing a thin film is provided, taking lead zirconate titanate (PZT) thin film as an example, which includes the following steps: Step S1: Preparation of PZT thin film Step S11: Take a six-inch substrate of LaNiO3 / Pt / ZrO2 / Si(100) or SrRuO3 / Pt / ZrO2 / Si(100), LaNiO3 / Pt / ZrO2 / Si(100) or LaSrMnO3 / Pt / ZrO2 / Si(100), and clean it sequentially with acetylacetone, anhydrous ethanol and deionized water using ultrasonic cleaning. After cleaning, dry it with a nitrogen gas gun.

[0041] Step S12: Place the above substrate at the center of the graphite heat-conducting plate (in the embodiment or comparative example, quartz radiation heat transfer is used), and fix the heat-conducting plate 2cm directly above the heating wire, keeping the heating wire, the heat-conducting plate and the center of the wafer on the same axis.

[0042] Step S13: Place the PZT target material (Pb) 1.10 Zr 0.52 Ti 0.48 Fix it directly above the substrate and place the shielding device in the first position. Close the chamber and evacuate to 8×10⁻⁶. -4 After the pressure drops below 300 Pa, set the rotation speed of the graphite heat transfer plate to 10 rpm / s, turn on the heating switch, and raise the temperature to 300°C. o C-700 o C.

[0043] Step S14: Open the air inlet valve and control the gas in the chamber to be Ar:O2 at a ratio of 45:5 and a pressure of 1 Pa.

[0044] Step S15: Turn on the RF power supply, set the sputtering power to 200W, perform pre-sputtering when the shield is in the first station, then set the shield in the second station, turn off the heating and process gas after the preset deposition time, wait for the chamber to cool down and then take out the substrate to obtain a PZT film of preset thickness.

[0045] In this configuration, the first station is located outside the atomic deposition trajectory, while the second station is located between the target and the substrate, and it blocks at least part of the atomic deposition trajectory. Under a static non-uniform magnetic field distribution, the atomic deposition rate sputtered on the target surface is fast at the center and slow at the edges. The shielding device can block the deposited atoms in the high-speed deposition region at the center and cause some atoms to undergo partial deflection and scattering, thereby improving the uniformity of the deposition rate along the wafer radial direction and improving the uniformity of the film thickness.

[0046] It is understandable that when the aforementioned shielding component is located at the second station, the center of the shielding component, the center of the target material, and the center of the wafer are on the same axis.

[0047] Example 1 This embodiment provides a thin film preparation method, taking lead zirconate titanate (PZT) thin film as an example, which includes the following steps: Step S1: Take an area of ​​182.41 cm². 2 Six-inch substrates of LaNiO3 / Pt / ZrO2 / Si(100) or SrRuO3 / Pt / ZrO2 / Si(100) or LaSrMnO3 / Pt / ZrO2 / Si(100) were ultrasonically cleaned sequentially with acetylacetone, anhydrous ethanol and deionized water, and then dried with a nitrogen gas gun.

[0048] Step S2: Place the substrate at the center of the quartz support stage and fix the heat-conducting plate 2cm above the heating wire, keeping the heating wire, the heat-conducting plate and the center of the substrate on the same axis.

[0049] Step S3: [The area is] 324.29 cm² 2 Circular PZT sputtering target (Pb 1.10 Zr 0.52 Ti 0.48 Fix it 15cm above the substrate and set it as the first height, with an area of ​​3.15 cm². 2 A circular shielding element is installed outside the atomic deposition trajectory and positioned as the first station. The shielding area of ​​the circular shielding element is 0.97% of the target area and 1.72% of the substrate area. Its distance from the substrate is 73.33% of the first height, i.e., 11 cm, and its total length is 24 cm. The chamber is then closed, and the vacuum is evacuated to 8 × 10⁻⁸ cm. -4 After the pressure drops below 650 Pa, set the rotation speed of the quartz stage to 10 rpm / s, turn on the heating switch, and raise the temperature to 650°C. o C.

[0050] Step S4: Open the air intake valve and control the Ar:O2 gas in the chamber to be 45:5, and set the pressure to 1 Pa.

[0051] Step S5: Turn on the RF power supply and set the sputtering power to 200W. Pre-sputter for 10s without opening the baffle. Then open the baffle. After the thickness of the film sputtered on the substrate is 3nm, which is 1.5% of the preset sputtering thickness, move the circular shield to the top of the substrate and keep the height unchanged. Keep the center of the circular shield, the center of the target, and the center of the wafer on the same axis and set it in the second station. After deposition for 5 minutes, turn off the heating and process gas. After the chamber cools down, take out the substrate to obtain a 200 nm thick PZT film.

[0052] The thickness and uniformity of the PZT film obtained in this embodiment were tested using an ellipsometer. The test results are as follows: Figure 4 As shown. See Table 1 for specific data: Table 1 Film thickness distribution table for Example 1 As shown in Table 1, the uniformity of the PZT film prepared in this embodiment is 5.8%.

[0053] Example 2 This embodiment is basically the same as Embodiment 1, except that the parameters of the shielding component and the pre-sputtering time are different, as follows: the area of ​​the circular shielding component is 12.57 cm². 2 The area of ​​the target material is 3.88% and the area of ​​the substrate is 6.89%, and its height from the substrate is 73.33% of the first height. When the shielding device is in the first station, the film thickness sputtered above the substrate is 0.5% of the preset sputtering thickness. Then the shielding device is adjusted to the second station, and sputtering continues until a PZT film with a thickness of 200 nm is obtained.

[0054] The thickness and uniformity of the PZT film obtained in this embodiment were tested using an ellipsometer. The test results are as follows: Figure 5 As shown. See Table 2 for specific data: Table 2 Film thickness distribution table for Example 2 As shown in Table 2, the uniformity of the PZT film prepared in this example is 6.4%.

[0055] Example 3 This embodiment is basically the same as Embodiment 1, except that the parameters of the shielding component and the pre-sputtering time are different, as follows: the area of ​​the circular shielding component is 28.27 cm². 2The area of ​​the target material is 8.72% and the area of ​​the substrate is 15.50%, and its height from the substrate is 66.67% of the first height. When the shielding device is in the first station, the film thickness sputtered above the substrate is 2.5% of the preset sputtering thickness. Then the shielding device is adjusted to the second station, and sputtering continues until a PZT film with a thickness of 200 nm is obtained.

[0056] The thickness and uniformity of the PZT film obtained in this embodiment were tested using an ellipsometer. The test results are as follows: Figure 6 As shown. See Table 3 for specific data: Table 3 Film thickness distribution table for Example 3 As shown in Table 3, the uniformity of the PZT film prepared in this example is 3.1%.

[0057] Example 4 This embodiment is basically the same as Embodiment 1, except that the parameters of the shielding component and the pre-sputtering time are different, as follows: the area of ​​the circular shielding component is 50.27 cm². 2 The area of ​​the target material is 15.50% and the area of ​​the substrate is 27.56%, and its height from the substrate is 53.33% of the first height. When the shielding device is in the first station, the film thickness sputtered above the substrate is 1.5% of the preset sputtering thickness. Then the shielding device is adjusted to the second station, and sputtering continues until a PZT film with a thickness of 200 nm is obtained.

[0058] The thickness and uniformity of the PZT film obtained in this embodiment were tested using an ellipsometer. The test results are as follows: Figure 7 As shown. See Table 4 for specific data: Table 4 Film thickness distribution table for Example 4 As shown in Table 4, the uniformity of the PZT film prepared in this example is 7.6%.

[0059] Example 5 This embodiment is basically the same as Embodiment 1, except for the target parameters, shielding parameters, and pre-sputtering time. Specifically, the target with an area of ​​324.29 cm² is used. 2 Square PZT sputtering target (Pb 1.10 Zr 0.52 Ti 0.48 Fix it 15cm above the substrate and set it as the first height, with an area of ​​28.27 cm². 2A square shield is installed outside the atomic deposition trajectory and set as the first station. The area of ​​the square shield is 8.72% of the target area and 15.50% of the substrate area, and its height from the substrate is 66.67% of the first height. When the shield is in the first station, the film thickness sputtered above the substrate is 2.5% of the preset sputtering thickness. Then the shield is adjusted to the second station, and sputtering continues until a PZT film with a thickness of 200 nm is obtained.

[0060] When the square shielding component is set in the second station, it is moved to be directly above the substrate while maintaining a constant height, keeping the center of the square shielding component, the center of the target material, and the center of the substrate on the same axis.

[0061] The thickness and uniformity of the PZT film obtained in this embodiment were tested using an ellipsometer. The test results are as follows: Figure 8 As shown. See Table 5 for specific data: Table 5 Film thickness distribution table for Example 5 As shown in Table 5, the uniformity of the PZT film prepared in this example is 9.7%.

[0062] Comparative Example 1 This comparative example uses a conventional thin film preparation method, as detailed below: Step S1: Take an area of ​​182.41 cm². 2 Six-inch substrates of LaNiO3 / Pt / ZrO2 / Si(100) or SrRuO3 / Pt / ZrO2 / Si(100), LaNiO3 / Pt / ZrO2 / Si(100) or LaSrMnO3 / Pt / ZrO2 / Si(100) were ultrasonically cleaned sequentially with acetylacetone, anhydrous ethanol and deionized water, and then dried with a nitrogen gas gun.

[0063] Step S2: Place the substrate at the center of the graphite support platform and fix the heat-conducting plate 2cm above the heating wire, keeping the heating wire, the heat-conducting plate and the center of the substrate on the same axis.

[0064] Step S3: [The area is] 324.29 cm² 2 Circular PZT sputtering target (Pb 1.10 Zr 0.52 Ti 0.48 It was fixed 15cm above the substrate. The chamber was then closed, and the vacuum was evacuated to 8×10⁻⁶. -4 After the pressure drops below 650 Pa, set the rotation speed of the graphite support stage to 10 rpm / s, turn on the heating switch, and raise the temperature to 650°C. o C.

[0065] Step S4: Open the air intake valve and control the Ar:O2 gas in the chamber to be 45:5, and set the pressure to 1 Pa.

[0066] Step S5: Turn on the RF power supply and set the sputtering power to 200W. Pre-sputter for 10 seconds without opening the baffle, then open the baffle and deposit for 5 minutes. After that, turn off the heating and process gas, wait for the chamber to cool down, and then remove the substrate to obtain a 200 nm thick PZT film with a uniformity of 13.1%. Specific test results are shown in the figure. Figure 9 As shown in Figure 6, the test data is presented in a chart.

[0067] Table 6 Comparative Example 1 Film Thickness Distribution Comparative Example 2 This comparative example is basically the same as Example 1, except for the parameters of the shielding element, the pre-sputtering time, and the thickness of the prepared film, etc., as follows: the area of ​​the circular shielding element is 78.54 cm². 2 The area of ​​the target material is 24.22% and the area of ​​the substrate is 43.06%, and its height from the substrate is 40.00% of the first height. When the shielding element is in the first station, the film thickness sputtered above the substrate is 1.5% of the preset sputtering thickness. Then, the shielding element is adjusted to the second station, and sputtering continues until a PZT film with a thickness of 300 nm is obtained. Its uniformity is 15.0%, and the specific test results are shown in the figure. Figure 10 As shown in Figure 7, the test data is presented in the table below.

[0068] Table 7 Comparative Example 2 Film Thickness Distribution Table Comparative Example 3 This comparative example is basically the same as Example 1, except for the parameters of the shielding element, the pre-sputtering time, and the thickness of the prepared film, etc., as follows: the area of ​​the circular shielding element is 0.79 cm². 2 The area of ​​the target material is 0.24% and the area of ​​the substrate is 0.43%, and its height from the substrate is 80.00% of the first height. When the shielding element is in the first station, the film thickness sputtered above the substrate is 1.5% of the preset sputtering thickness. Then, the shielding element is adjusted to the second station, and sputtering continues until a PZT film with a thickness of 500 nm is obtained. Its uniformity is 15.1%, and the specific test results are shown in the figure. Figure 10 As shown in Figure 8, the test data is presented in a chart.

[0069] Table 8 Comparative Example 3 Film Thickness Distribution Table In summary, the data from the above embodiments and comparative examples are summarized in Table 9: Table 9 Summary of Film Uniformity in Examples and Comparative Examples In summary, using the method provided in this application, when the area of ​​the shielding region is 0.97% to 15.50% of the target area and 1.72% to 27.56% of the substrate area, and the height from the substrate is 53.3% to 73.3% of the height between the target and the substrate, the uniformity of the prepared film is less than 9.7%. This is significantly better than films prepared without a shielding component (film uniformity 13.1%) or with shielding component parameters outside the aforementioned range (film uniformity greater than 15%).

[0070] One technical solution adopted in this application is to effectively improve the uniformity of film thickness and crystallization through a contact heat-conducting pad and a shielding element (or off-axis sputtering). Contact heat conduction is an important means to improve the uniformity of film crystallization. By using a graphite tray, the heat transfer method is changed from traditional quartz radiation heat transfer to a method of heating wire thermal radiation - solid-state heat transfer from the graphite tray to the substrate. The high in-plane thermal conductivity of graphite can compensate for the uneven thermal radiation problem of the heating wire itself. Combined with the rotation of the graphite tray, the temperature uniformity can be further improved, thereby improving the temperature uniformity during film deposition. At the same time, the shielding element under the target further adjusts the radial distribution of sputtered particles along the substrate, resulting in a more uniform deposition rate distribution and improved film thickness uniformity. Compared with traditional multi-temperature zone heating self-regulation and moving magnetic field methods, the optimization of film uniformity based on contact heating and shielding elements has the following advantages: First, the film can have both uniform thickness and good crystallinity, which is beneficial to its subsequent device processing. Second, its processing structure is simple, has good repeatability, and can achieve large-scale mass production.

[0071] Those skilled in the art will readily understand that the above description is merely a preferred embodiment of this application and is not intended to limit this application. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of this application should be included within the protection scope of this application.

Claims

1. A magnetron sputtering apparatus for sputtering a substrate to form a thin film on the substrate; characterized in that, include: The target material, which is placed directly above the substrate, is used to sputter and generate an atomic beam with momentum under the action of incident particles; At least a portion of the atoms in the atomic beam are deposited above the substrate to form a thin film; A shielding component is used to shield the atomic beam generated by sputtering in a preset area at the center of the target material, and to deflect and scatter the atomic beam generated by sputtering around the preset area. When the magnetron sputtering device sputters the substrate, the shielding member is successively set at the first station and the second station. The first station is located outside the trajectory of at least a portion of the atomic deposition, and the second station is located between the target and the substrate, and shields part of the trajectory of at least a portion of the atomic deposition.

2. The magnetron sputtering apparatus as described in claim 1, characterized in that, When the magnetron sputtering device sputters the substrate, the shielding member is first set at the first station until the thickness of the film sputtered on the substrate is 0.5%-2.5% of the preset sputtering thickness, and then it is set at the second station until the thickness of the film on the substrate reaches the preset sputtering thickness.

3. The magnetron sputtering apparatus according to claim 1, characterized in that, When the shielding component is located at the second working position, it is coaxially arranged with the target material.

4. The magnetron sputtering apparatus according to claim 1 or 3, characterized in that, The shielding component includes a shielding area; the area of ​​the shielding area is 0.97% to 15.50% of the target area and 1.72% to 27.56% of the substrate area. Let the height between the target and the substrate be the first height. When the shielding member is located at the second station, its height from the substrate is in the range of 53.3% to 73.3% of the first height.

5. The magnetron sputtering apparatus as described in claim 4, characterized in that, When the target material is circular, the blocking area is circular; when the target material is square, the blocking area is square.

6. The magnetron sputtering apparatus as described in claim 1, characterized in that, Also includes: Support platform; The support platform has heating and rotation functions and is used to support the substrate.

7. The magnetron sputtering apparatus as described in claim 6, characterized in that, The heating function of the support platform is achieved through a graphite heat-conducting plate.

8. A method for preparing a thin film, characterized in that, Includes the following steps: Provide substrate; Using the substrate as a substrate, a thin film is prepared on the substrate using the magnetron sputtering apparatus according to any one of claims 1 to 7.

9. A PZT thin film prepared by the thin film preparation method of claim 8.

10. The PZT thin film as described in claim 9, characterized in that, The uniformity of the PZT film is less than 9.7%.

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