Distributed amplifier integrated circuit and distributed amplifier
By using a distributed amplifier integrated circuit, the magnetic coupling between the drain inductor and the gate inductor is utilized to compensate for gate signal loss, thus solving the problem of limited bandwidth in traditional amplifiers and achieving high-frequency gain improvement and bandwidth extension.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- BEIJING UNIV OF POSTS & TELECOMM
- Filing Date
- 2026-02-28
- Publication Date
- 2026-07-10
AI Technical Summary
Traditional amplifiers are limited by the parasitic capacitance of active devices and the bandwidth of matching networks, making it difficult to achieve large bandwidth. Furthermore, at high frequencies, the gain decreases due to artificial transmission line losses.
By employing a distributed amplifier integrated circuit, the parasitic capacitance of the active gain unit is absorbed into the gate/drain artificial transmission line. The magnetic coupling between the drain inductance and the gate inductance is used to couple part of the drain output signal back to the gate transmission line, compensating for the reduction in gate signal swing caused by artificial transmission line loss. Furthermore, different coupling coefficients are designed for different number of stages to improve high-frequency gain and expand bandwidth.
It achieves a broadband design, improves high-frequency gain, extends the bandwidth to over 45GHz, consumes 31.8mW, and has a gain fluctuation of less than 1.3dB.
Smart Images
Figure CN122371905A_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of distributed amplifier circuit design technology, and in particular to a distributed amplifier integrated circuit and a distributed amplifier. Background Technology
[0002] With the continuous development of radio frequency integrated circuit technology and related technologies, communication systems are evolving towards large data capacity, high speed, and multi-band fusion, while radar systems are moving towards high-resolution and high-precision detection. These emerging demands place extremely high bandwidth requirements on front-end circuits, often needing to cover several octaves to simultaneously support multiple signal systems and complex operating scenarios. However, limited by the parasitic capacitance of active devices and the matching bandwidth of matching networks, traditional amplifier structures typically struggle to achieve such a large operating bandwidth.
[0003] Distributed amplifiers absorb the input / output parasitic capacitances of the active gain unit into the gate / drain transmission line, forming an artificial gate / drain transmission line. This makes the parasitic capacitances part of the artificial transmission line rather than the active gain unit. As a result, the amplifier's bandwidth is no longer affected by the gain reduction caused by the parasitic capacitance in the active gain unit, but is mainly determined by the cutoff frequency of the artificial transmission line. Therefore, distributed amplifiers can achieve very large bandwidths.
[0004] In traditional distributed amplifier structures, due to the non-ideal loss characteristics of artificial transmission lines, the input voltage swing of each active gain unit decreases step by step at high frequencies, resulting in a decrease in gain and bandwidth at high frequencies. Summary of the Invention
[0005] In view of this, the purpose of this application is to provide a distributed amplifier integrated circuit and a distributed amplifier.
[0006] To achieve the above objectives, this application provides a distributed amplifier integrated circuit, comprising: at least two distributed unit modules, a gate module, a drain module, and a DC blocking module; the distributed unit modules include a first drain-gate coupling transformer, a second drain-gate coupling transformer, and an active gain unit; the first drain-gate coupling transformer includes a first gate inductor, a first drain inductor, and a first coupling coefficient; the second drain-gate coupling transformer includes a second gate inductor, a second drain inductor, and a second coupling coefficient; the first gate inductor is coupled to the first drain inductor; the second gate inductor is coupled to the second drain inductor;
[0007] The first terminal of the first gate inductor of the first distributed unit module is the input terminal of the distributed amplifier; The second terminal of the first gate inductor is connected to the first terminal of the second gate inductor and the first terminal of the active gain unit; The second terminal of the active gain unit is connected to the second terminal of the first drain inductor and the first terminal of the second drain inductor. The second terminal of the second gate inductor is connected to the first terminal of the first gate inductor in the next distributed unit module; the second terminal of the second drain inductor is connected to the first terminal of the first drain inductor in the next distributed unit module. The first terminal of the first drain inductor of the first distributed unit module is connected to the drain module; the second terminal of the second gate inductor of the last distributed unit module is connected to the gate module; and the second terminal of the second drain inductor of the last distributed unit module is connected to the DC blocking module.
[0008] In one possible implementation, the gate module includes a gate resistor; The first terminal of the gate resistor is connected to the second terminal of the second gate inductor of the last distributed unit module; the second terminal of the gate resistor is connected to ground.
[0009] In one possible implementation, the drain module includes a drain resistor, a first DC blocking capacitor, and a feed inductor. The first terminal of the first DC blocking capacitor is connected to the first terminal of the first drain inductor of the first distributed unit module. The second terminal of the first DC blocking capacitor is connected to the first terminal of the drain resistor; The second terminal of the drain resistor is connected to ground; The first terminal of the power supply inductor is connected to the first terminal of the first drain inductor of the first distributed unit module. The second terminal of the feed inductor is connected to the power supply voltage.
[0010] In one possible implementation, the DC blocking module includes a second DC blocking capacitor; The first terminal of the second DC blocking capacitor is connected to the second terminal of the second drain inductor of the last distributed unit module; the second terminal of the second DC blocking capacitor of the last distributed unit module is the output terminal of the distributed amplifier.
[0011] In one possible implementation, the device parameters in each of the distributed unit modules are consistent with those in the other distributed unit modules, except for the first coupling coefficient and the second coupling coefficient.
[0012] In one possible implementation, each of the distributed unit modules, from the beginning to the end, follows the order from the first coupling coefficient to the second coupling coefficient, with the coupling coefficient changing from negative to positive.
[0013] In one possible implementation, the second coupling coefficient in the distributed unit module at the end is zero.
[0014] Based on the same inventive concept, embodiments of this application also provide a distributed amplifier, including the distributed amplifier integrated circuit as described in any of the above claims.
[0015] As can be seen from the above description, the distributed amplifier integrated circuit and distributed amplifier provided in this application include: at least two distributed unit modules, a gate module, a drain module, and a DC blocking module; the distributed unit module includes a first drain-gate coupling transformer, a second drain-gate coupling transformer, and an active gain unit; the first drain-gate coupling transformer includes a first gate inductor, a first drain inductor, and a first coupling coefficient; the second drain-gate coupling transformer includes a second gate inductor, a second drain inductor, and a second coupling coefficient; the first terminal of the first gate inductor of the first distributed unit module is the input terminal of the distributed amplifier; the second terminal of the first gate inductor is connected to the first terminal of the second gate inductor, and the active gain unit... The first terminal of the active gain unit is connected; the second terminal of the active gain unit is connected to the second terminal of the first drain inductor and the first terminal of the second drain inductor; the second terminal of the second gate inductor is connected to the first terminal of the first gate inductor in the next distributed unit module; the second terminal of the second drain inductor is connected to the first terminal of the first drain inductor in the next distributed unit module; the first terminal of the first drain inductor of the first distributed unit module is connected to the drain module; the second terminal of the second gate inductor of the last distributed unit module is connected to the gate module; the second terminal of the second drain inductor of the last distributed unit module is connected to the DC blocking module. The distributed amplifier in the embodiments of this application includes a distributed unit module that, through the magnetic coupling between the first drain inductor and the first gate inductor, and the magnetic coupling between the second drain inductor and the second gate inductor, couples part of the power of the output signal on the drain line back to the gate line, thereby increasing the swing of the input signal on the gate line to compensate for the gradual decrease in the input signal swing caused by the loss of the artificial transmission line. Since the signal swing at the gate line is much larger than the signal swing at the drain line, only a very low coupling coefficient is needed to compensate for the gate line swing. Therefore, the signal coupled to the gate line accounts for only a small portion of the drain line output signal power and has virtually no impact on the drain line output. In the first part of the distributed unit module, the total current direction on the drain line is mainly towards the drain resistance, so a negative coupling coefficient is used to compensate for the gate line signal. In the second part of the distributed unit module, the total current direction on the drain line is mainly towards the output, so a positive coupling coefficient is used to compensate for the gate line signal. There are no active gain units after the gate inductor of the 2N drain-gate coupling transformer, so no further coupling is needed to compensate for the signal; therefore, the coupling coefficient is set to 0. By using different coupling coefficients for distributed unit modules of different numbers, the high-frequency gain of the distributed amplifier is improved, and the high-frequency bandwidth is expanded. Attached Figure Description
[0016] To more clearly illustrate the technical solutions in this application or related technologies, the drawings used in the description of the embodiments or related technologies will be briefly introduced below. Obviously, the drawings described below are only embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0017] Figure 1 This is a schematic diagram of the distributed amplifier integrated circuit according to an embodiment of this application; Figure 2 This is a schematic diagram of the connection of the distributed amplifier integrated circuit module according to an embodiment of this application; Figure 3 This is a schematic diagram of a distributed amplifier integrated circuit according to a specific embodiment of this application; Figure 4 This is a schematic diagram of the power gain of the distributed amplifier under gate / leakage inductance coupling in each embodiment of this application; Figure 5 This is a schematic diagram comparing the power gain simulation results of the distributed amplifier integrated circuit in this application embodiment. Detailed Implementation
[0018] To make the objectives, technical solutions, and advantages of this application clearer, the following detailed description is provided in conjunction with specific embodiments and the accompanying drawings.
[0019] It should be noted that, unless otherwise defined, the technical or scientific terms used in the embodiments of this application should have the ordinary meaning understood by one of ordinary skill in the art to which this application pertains. The terms "first," "second," and similar terms used in the embodiments of this application do not indicate any order, quantity, or importance, but are merely used to distinguish different components. Terms such as "comprising" or "including" mean that the element or object preceding the word encompasses the elements or objects listed after the word and their equivalents, without excluding other elements or objects. Terms such as "connected" or "linked" are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. Terms such as "upper," "lower," "left," and "right" are only used to indicate relative positional relationships; when the absolute position of the described object changes, the relative positional relationship may also change accordingly.
[0020] As described in the background section, with the development of radio frequency integrated circuit technology, communication systems are evolving towards large data capacity, high speed, and multi-band integration, while radar systems are pursuing high resolution and high precision. This places extremely high bandwidth requirements on front-end circuits, necessitating coverage of multiple octaves to support complex scenarios. However, traditional amplifiers are limited by the parasitic capacitance of active devices and the bandwidth of matching networks, making it difficult to achieve large bandwidth. Distributed amplifiers eliminate the influence of parasitic capacitance on gain by absorbing it into the gate / drain artificial transmission line, making the bandwidth mainly determined by the cutoff frequency of the artificial transmission line, thus achieving ultra-wideband design. However, its traditional structure suffers from gain reduction and bandwidth limitation at high frequencies due to transmission line losses.
[0021] Based on the above considerations, this application proposes a distributed amplifier integrated circuit, including: at least two distributed unit modules, a gate module, a drain module, and a DC blocking module; each distributed unit module includes a first drain-gate coupling transformer, a second drain-gate coupling transformer, and an active gain unit; the first drain-gate coupling transformer includes a first gate inductor, a first drain inductor, and a first coupling coefficient; the second drain-gate coupling transformer includes a second gate inductor, a second drain inductor, and a second coupling coefficient; the first gate inductor is coupled to the first drain inductor; the second gate inductor is coupled to the second drain inductor; the first terminal of the first gate inductor of the first distributed unit module is the input terminal of the distributed amplifier; the second terminal of the first gate inductor is coupled to the second drain inductor. The first terminal of the second gate inductor is connected to the first terminal of the active gain unit; the second terminal of the active gain unit is connected to the second terminal of the first drain inductor and the first terminal of the second drain inductor; the second terminal of the second gate inductor is connected to the first terminal of the first gate inductor in the next distributed unit module; the second terminal of the second drain inductor is connected to the first terminal of the first drain inductor in the next distributed unit module; the first terminal of the first drain inductor of the first distributed unit module is connected to the drain module; the second terminal of the second gate inductor of the last distributed unit module is connected to the gate module; the second terminal of the second drain inductor of the last distributed unit module is connected to the DC blocking module. In this embodiment, the distributed unit module uses magnetic coupling between the drain inductor and the gate inductor to couple part of the drain output signal power back to the gate transmission line, compensating for the gradual decrease in gate signal swing caused by artificial transmission line losses. Since the gate signal swing is much higher than the drain signal, compensation can be achieved with only a low coupling coefficient, resulting in minimal impact on the drain signal output. The drain current of the pre-stage module mainly points to the drain resistance, and a negative coupling coefficient is used to compensate for the gate signal. The drain current of the post-stage module mainly points to the output, and a positive coupling coefficient is used to compensate for the gate signal. Since the final stage module has no subsequent active gain unit, its coupling coefficient is set to 0. By designing the coupling coefficients of different modules, the high-frequency gain is significantly improved and the bandwidth is extended.
[0022] The technical solutions of the embodiments of this application will be described in detail below through specific examples.
[0023] refer to Figure 1 and Figure 2 The distributed amplifier integrated circuit of this application embodiment includes: at least two distributed unit modules 1, a gate-end module 2, a drain-end module 3, and a DC blocking module 4. Each distributed unit module includes a first drain-gate coupling transformer, a second drain-gate coupling transformer, and an active gain unit. The distributed amplification unit module amplifies the input signal in a distributed manner. The outputs of each distributed unit module are superimposed stage by stage through the drain line, and the final superimposed power is output at the last distributed unit module. The gate module absorbs the input traveling wave transmitted to this module to prevent the input signal from being reflected back. The drain module absorbs the output traveling wave transmitted in reverse to this module to prevent the reverse output signal from being reflected back, and at the same time provides the drain power supply voltage for the common-gate MOSFET in the distributed unit module. The DC blocking module isolates DC voltage.
[0024] refer to Figure 3 This is a schematic diagram of a distributed amplifier integrated circuit according to a specific embodiment of this application.
[0025] It should be noted that, for ease of explanation, the following names are arranged according to the subscript number.
[0026] This embodiment includes: a first capacitor Second capacitor Third capacitor Fourth capacitor Fifth capacitor Sixth capacitor Seventh capacitor Eighth capacitor First DC blocking capacitor Second DC blocking capacitor First Inductor Second inductor Third inductor Fourth Inductor Fifth Inductor Sixth Inductor Seventh Inductor Eighth Inductor Feed inductor (RFC), first gate inductor First drain inductance First coupling coefficient Second gate inductor Second drain inductance Second coupling coefficient Third gate inductor Third drain inductor Third coupling coefficient Fourth gate inductor Fourth drain inductor Fourth coupling coefficient Fifth gate inductor Fifth drain inductor Fifth coupling coefficient Sixth gate inductor Sixth drain inductor Sixth coupling coefficient 7th gate inductor Seventh drain inductor , seventh coupling coefficient Eighth gate inductor Eighth drain inductor 8th Coupling Coefficient First resistor Second resistor Third resistor Fourth resistor Fifth resistor The sixth resistor The seventh resistor The eighth resistor Gate resistance Drain resistance First MOSFET Second MOSFET Third MOSFET Fourth MOSFET Fifth MOSFET The sixth MOSFET 7th MOSFET Eighth MOSFET Input port Output ports Bias voltage Power supply voltage .in: First gate inductor The first end serves as the input end of the distributed amplifier in this embodiment. .
[0027] In some embodiments, the active gain unit includes a first capacitor, a second capacitor, a first resistor, a second resistor, a first inductor, a second inductor, a first MOSFET, and a second MOSFET; the second terminal of the first gate inductor is connected to the first terminal of the first capacitor; the second terminal of the first capacitor is connected to the gate of the first MOSFET and the first terminal of the first resistor, respectively; the drain of the first MOSFET is connected to the first terminal of the first inductor; the second terminal of the first resistor is connected to a bias voltage; the source of the first MOSFET is grounded; the second terminal of the first inductor is connected to the source of the second MOSFET; the gate of the second MOSFET is connected to the first terminal of the second inductor; the second terminal of the second inductor is connected to the first terminal of the second capacitor and the first terminal of the second resistor, respectively; the second terminal of the second capacitor is grounded; the drain of the second MOSFET is connected to the second terminal of the first drain inductor and the first terminal of the second drain inductor, respectively.
[0028] Specifically, in Figure 3 In the middle, the first, third, fifth, and seventh gate inductors , , , The second terminal is connected to the second, fourth, sixth, and eighth gate inductors respectively. , , , The first terminal and the first, third, fifth, and seventh capacitors , , , The first terminal. First, third, fifth, and seventh capacitors. , , , The second terminal is connected to the first, third, fifth, and seventh MOSFETs respectively. , , , The gate and the first, third, fifth, and seventh resistors , , , The first terminal. The first, third, fifth, and seventh resistors. , , , The second terminal is connected to the bias voltage. The first, third, fifth, and seventh MOSFETs , , , The source is grounded, and the drain is connected to the first, third, fifth, and seventh inductors respectively. , , , The first end. The first, third, fifth, and seventh inductors. , , , The second terminal is connected to the second, fourth, sixth, and eighth MOSFETs respectively. , , , The source of the second, fourth, sixth, and eighth MOSFETs. , , , The gates are respectively connected to the second, fourth, sixth, and eighth inductors. , , , The first terminal. The second, fourth, sixth, and eighth inductors. , , , The second terminal is connected to the second, fourth, sixth, and eighth capacitors respectively. , , , The first terminal and the second, fourth, sixth, and eighth resistors , , , The first terminal. The second, fourth, sixth, and eighth capacitors. , , , The second terminal is grounded. The second, fourth, sixth, and eighth resistors... , , , The second terminal is connected to the power supply voltage. The second, fourth, sixth, and eighth MOSFETs , , , The drain terminals are respectively connected to the first, third, fifth, and seventh drain inductors. , , , The second terminal and the second, fourth, sixth, and eighth drain inductors , , , The first terminal. The second, fourth, and sixth gate inductors. , , The second terminal is connected to the third, fifth, and seventh gate inductors respectively. , , The first terminal. The second, fourth, and sixth drain inductors. , , The second terminal is connected to the third, fifth, and seventh drain inductors respectively. , , The first end.
[0029] Eighth gate inductor The second end is connected to the gate resistor. The first terminal. Gate resistance. The second end is connected to the ground.
[0030] First drain inductance The first terminal is connected to the first terminal of the feed inductor RFC and the first DC blocking capacitor. The second terminal. The second terminal of the feed inductor RFC is connected to the power supply voltage. First DC blocking capacitor The first terminal is connected to the drain resistor. The first terminal. Drain resistance. The second end is connected to the ground.
[0031] Eighth drain inductor The second end is connected to the second DC blocking capacitor. The first terminal. The second DC blocking capacitor. The second end serves as the output end of the distributed amplifier in this embodiment. .
[0032] for Figure 3 The specific working principle of the distributed amplifier integrated circuit schematic provided in this application is as follows: This specific embodiment is a broadband distributed amplifier operating at DC-45GHz, with a maximum gain of 9.7 dB, gain fluctuation within the frequency band of less than 1.3 dB, and power consumption of 31.8mW.
[0033] All gate inductors in the four distributed unit modules and drain inductance The inductance values (i = 1 to 8) are all the same. The two gate inductors in a single distributed unit module, along with the input and series capacitors of the active gain unit, and the two drain inductors, along with the output capacitor of the active gain unit, form an artificial transmission line with a characteristic impedance of 50Ω, ensuring wideband input-output matching. Since the parasitic capacitance of the active gain unit is absorbed into the artificial transmission line, the amplifier's bandwidth is no longer affected by the gain reduction caused by the parasitic capacitance in the active gain unit, but is mainly determined by the cutoff frequency of the artificial transmission line.
[0034] In the distributed unit module, due to losses in the artificial transmission line, the voltage swing of the gate artificial transmission line gradually decreases with increasing stage number at high frequencies. This leads to a gradual decrease in the output of the active gain unit, resulting in a decrease in overall gain and bandwidth. This can be addressed by using a leakage inductor. With gate inductor The magnetic coupling between the two electrodes couples a small portion of the signal from the drain artificial transmission line to the gate transmission line, compensating for the reduced voltage swing on the gate artificial transmission line caused by losses, thereby improving high-frequency gain and expanding bandwidth. (Leakage inductance) With gate inductor The coupling coefficient between them is small to avoid excessive output signal coupling back to the gate transmission line, which would reduce the gain, and to avoid instability caused by feedback.
[0035] In the distributed unit module, since the impedance seen by the output of the active gain unit in both the drain resistance direction and the output direction is 50Ω, the output current of each active gain unit is evenly distributed, flowing towards the drain resistance direction and the output direction respectively. After the current is superimposed from the four distributed unit modules, the current on the drain transmission line of the first and second distributed unit modules is mainly towards the drain resistance direction, while the current on the drain transmission line of the third and fourth distributed unit modules is mainly towards the output direction. The coupling coefficients of the first and second distributed unit modules are set to negative, and the coupling coefficients of the third and fourth distributed unit modules are set to positive, ensuring that all currents coupled to the gate transmission line are directed towards the gate inductance direction, thus compensating for losses on the gate-level artificial transmission line. Different coupling coefficients are set according to the different current magnitudes at different locations on the drain transmission line towards the drain resistance direction or the output direction to achieve the best loss compensation effect.
[0036] Eighth gate inductor and the eighth drain inductor There are no further active gain units, so no further loss compensation is needed, and to avoid the eighth drain inductor... Output power coupled to gate resistor This results in wasted gain, and the eighth coupling coefficient... Set to 0.
[0037] Please see Figure 4 The power gain of the distributed amplifiers under each gate / leakage inductance coupling is provided. Figure 4 The horizontal axis represents frequency (GHz), and the vertical axis represents power gain (dB). Different curves represent the power gain under different gate-drain coupling locations. Simulation results show that, compared to no coupling introduced, the first coupling coefficient... and the eighth coupling coefficient When set to positive, the power gain across the entire frequency band decreases, and the second coupling coefficient... Up to the seventh coupling coefficient When set to positive, the power gain decreases at low frequencies and increases at high frequencies. Simulation results demonstrate that using all positive coupling coefficients is not optimal for overall power gain.
[0038] Please see Figure 5 A comparison chart of power gain simulation results for the provided RF distributed amplifier integrated circuit with high-frequency gain enhancement and bandwidth expansion. Figure 5 yes Figure 3 The simulation results of the circuit, Figure 5 The horizontal axis represents frequency (GHz), and the vertical axis represents power gain (dB). Different curves represent different coupling coefficient settings. Compared to no coupling, using gradient coupling can improve high-frequency gain and gain bandwidth without sacrificing low-frequency gain, achieving a maximum gain of 9.7dB and a bandwidth exceeding 45GHz.
[0039] As can be seen from the above embodiments, the distributed amplifier integrated circuit described in this application includes: at least two distributed unit modules, a gate module, a drain module, and a DC blocking module; each distributed unit module includes a first drain-gate coupling transformer, a second drain-gate coupling transformer, and an active gain unit; the first drain-gate coupling transformer includes a first gate inductor, a first drain inductor, and a first coupling coefficient; the second drain-gate coupling transformer includes a second gate inductor, a second drain inductor, and a second coupling coefficient; the first gate inductor is coupled to the first drain inductor; the second gate inductor is coupled to the second drain inductor; the first terminal of the first gate inductor of the first distributed unit module is the input terminal of the distributed amplifier; the second terminal of the first gate inductor... The first terminal of the first distributed unit module is connected to the first terminal of the second gate inductor and the first terminal of the active gain unit; the second terminal of the active gain unit is connected to the second terminal of the first drain inductor and the first terminal of the second drain inductor; the second terminal of the second gate inductor is connected to the first terminal of the first gate inductor in the next distributed unit module; the second terminal of the second drain inductor is connected to the first terminal of the first drain inductor in the next distributed unit module; the first terminal of the first drain inductor of the first distributed unit module is connected to the drain module; the second terminal of the second gate inductor of the last distributed unit module is connected to the gate module; the second terminal of the second drain inductor of the last distributed unit module is connected to the DC blocking module. The distributed unit module, through the magnetic coupling between the drain inductor and the gate inductor, couples a portion of the drain output signal power back to the gate transmission line, compensating for the progressively decreasing gate signal swing caused by artificial transmission line losses. Since the gate signal swing is much higher than the drain signal, compensation can be achieved with only a low coupling coefficient, resulting in minimal impact on the drain signal output. The drain current of the pre-stage module mainly points to the drain resistance, and a negative coupling coefficient is used to compensate for the gate signal. The drain current of the post-stage module mainly points to the output, and a positive coupling coefficient is used to compensate for the gate signal. Since the final stage module has no subsequent active gain unit, its coupling coefficient is set to 0. By designing the coupling coefficients of different modules, the high-frequency gain is significantly improved and the bandwidth is extended.
[0040] This application also provides a distributed amplifier, including the distributed amplifier integrated circuit as described in any of the above embodiments.
[0041] Those skilled in the art should understand that the discussion of any of the above embodiments is merely exemplary and is not intended to imply that the scope of this application (including the claims) is limited to these examples; within the framework of this application, the technical features of the above embodiments or different embodiments can also be combined, the steps can be implemented in any order, and there are many other variations of different aspects of the embodiments of this application as described above, which are not provided in the details for the sake of brevity.
[0042] Additionally, to simplify the description and discussion, and to avoid obscuring the embodiments of this application, the well-known power / ground connections to integrated circuit (IC) chips and other components may or may not be shown in the provided drawings. Furthermore, the apparatus may be shown in block diagram form to avoid obscuring the embodiments of this application, and this also takes into account the fact that the details of the implementation of these block diagram apparatuses are highly dependent on the platform on which the embodiments of this application will be implemented (i.e., these details should be fully understood by those skilled in the art). While specific details (e.g., circuits) have been set forth to describe exemplary embodiments of this application, it will be apparent to those skilled in the art that the embodiments of this application can be implemented without these specific details or with variations thereof. Therefore, these descriptions should be considered illustrative rather than restrictive.
[0043] Although this application has been described in conjunction with specific embodiments thereof, many substitutions, modifications and variations of these embodiments will be apparent to those skilled in the art from the foregoing description.
[0044] The embodiments of this application are intended to cover all such substitutions, modifications, and variations that fall within the broad scope of the appended claims. Therefore, any omissions, modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the embodiments of this application should be included within the protection scope of this application.
Claims
1. A distributed amplifier integrated circuit, characterized in that, include: The system comprises at least two distributed unit modules, a gate module, a drain module, and a DC blocking module; each distributed unit module includes a first drain-gate coupling transformer, a second drain-gate coupling transformer, and an active gain unit; the first drain-gate coupling transformer includes a first gate inductor, a first drain inductor, and a first coupling coefficient; the second drain-gate coupling transformer includes a second gate inductor, a second drain inductor, and a second coupling coefficient; the first gate inductor is coupled to the first drain inductor; the second gate inductor is coupled to the second drain inductor. The first terminal of the first gate inductor of the first distributed unit module is the input terminal of the distributed amplifier; The second terminal of the first gate inductor is connected to the first terminal of the second gate inductor and the first terminal of the active gain unit; The second terminal of the active gain unit is connected to the second terminal of the first drain inductor and the first terminal of the second drain inductor. The second terminal of the second gate inductor is connected to the first terminal of the first gate inductor in the next distributed unit module; the second terminal of the second drain inductor is connected to the first terminal of the first drain inductor in the next distributed unit module. The first terminal of the first drain inductor of the first distributed unit module is connected to the drain module; the second terminal of the second gate inductor of the last distributed unit module is connected to the gate module; and the second terminal of the second drain inductor of the last distributed unit module is connected to the DC blocking module.
2. The distributed amplifier integrated circuit according to claim 1, characterized in that, The gate module includes a gate resistor; The first terminal of the gate resistor is connected to the second terminal of the second gate inductor of the last distributed unit module; the second terminal of the gate resistor is connected to ground.
3. The distributed amplifier integrated circuit according to claim 1, characterized in that, The drain module includes a drain resistor, a first DC blocking capacitor, and a feed inductor. The first terminal of the first DC blocking capacitor is connected to the first terminal of the first drain inductor of the first distributed unit module. The second terminal of the first DC blocking capacitor is connected to the first terminal of the drain resistor; The second terminal of the drain resistor is connected to ground; The first terminal of the power supply inductor is connected to the first terminal of the first drain inductor of the first distributed unit module. The second terminal of the feed inductor is connected to the power supply voltage.
4. The distributed amplifier integrated circuit according to claim 1, characterized in that, The DC blocking module includes a second DC blocking capacitor; The first terminal of the second DC blocking capacitor is connected to the second terminal of the second drain inductor of the last distributed unit module; the second terminal of the second DC blocking capacitor is the output terminal of the distributed amplifier.
5. The distributed amplifier integrated circuit according to claim 1, characterized in that, Except for the first coupling coefficient and the second coupling coefficient, the device parameters in each of the distributed unit modules are consistent with the device parameters in the other distributed unit modules.
6. The distributed amplifier integrated circuit according to claim 1, characterized in that, Each of the distributed unit modules, from the beginning to the end, follows the order from the first coupling coefficient to the second coupling coefficient, with the coupling coefficient changing from negative to positive.
7. The distributed amplifier integrated circuit according to claim 6, characterized in that, The second coupling coefficient in the distributed unit module at the end is zero.
8. A distributed amplifier, characterized in that, Including the distributed amplifier integrated circuit as described in any one of claims 1 to 7.