A method and system for detecting fau coupling effect

Abstract

This application provides a method and system for detecting the coupling effect of a Fiber Optic Actuator (FAU). In one example, the FAU coupling effect detection system includes: a C-band laser for outputting a C-band laser signal; a C-band circulator for inputting the C-band laser signal into a designated optical fiber of the FAU when the FAU is coupled to a silicon photonic chip, and inputting the reflected light signal of the C-band laser signal into an optical power meter; wherein a C-band grating is disposed in a single-mode waveguide corresponding to the designated optical fiber in the silicon photonic chip; the reflected light signal of the C-band laser signal is obtained by reflecting the input C-band laser signal through the C-band grating; and the optical power meter is used to measure the optical power of the reflected light signal of the C-band laser signal. Applying this embodiment allows for the detection of the coupling effect between the FAU and the silicon photonic chip without adding an additional loopback optical path.

Description

Technical Field

[0001] This application relates to the field of optical communication technology, and in particular to a method and system for detecting FAU coupling effect. Background Technology

[0002] In the CPO (Co-packaged Optics or Co-packaging) architecture, the light source and optical engine are separated into two independent devices from traditional optical modules. An external light source provides illumination to the optical engine via optical fiber, while the optical engine loads electrical signals onto the light source through a modulator, outputting signal light. In current mainstream CPO solutions, the optical engine needs to be soldered to the substrate using processes such as reflow soldering or thermoforming to ensure optimal high-speed electrical signal integrity and the highest integration density. Simultaneously, to ensure the maintainability of the CPO chip, the optical port is typically designed to be pluggable, using pluggable FAU (Fiber Array Unit) to import optical signals from the front panel into the chip.

[0003] However, existing pluggable FAUs are limited by factors such as port density and structural manufacturing processes, and cannot yet achieve true plug-and-play functionality like MPO connectors. They still require additional fixing structures to secure them after coupling.

[0004] How to detect the coupling effect of FAU has become an urgent technical problem to be solved. Summary of the Invention

[0005] This application provides a method and system for detecting the coupling effect of FAU.

[0006] According to a first aspect of the embodiments of this application, a system for detecting the coupling effect of FAU is provided, comprising: C-band laser, used to output C-band laser signals; A C-band circulator is used to input a C-band laser signal into a designated optical fiber coupled to the FAU of a silicon photonic chip, and to input the reflected optical signal of the C-band laser signal into an optical power meter; wherein, a C-band grating is disposed in the single-mode waveguide of the silicon photonic chip corresponding to the designated optical fiber; the reflected optical signal of the C-band laser signal is obtained by reflecting the input C-band laser signal by the C-band grating; The optical power meter is used to measure the optical power of the reflected light signal from a C-band laser signal.

[0007] According to a second aspect of the embodiments of this application, a method for detecting the coupling effect of FAU is provided, applied to the detection system provided in the first aspect, the method comprising: Obtain the optical power value measured by the optical power meter; The coupling state between the FAU and the silicon photonic chip is adjusted according to the optical power value until the optical power value meets the preset conditions.

[0008] Using the technical solution disclosed in this application, a C-band laser is used to output a C-band laser signal; a C-band circulator is used to input the C-band laser signal into a designated optical fiber of the FAU when the FAU is coupled to the silicon photonic chip, and to input the reflected light signal of the C-band laser signal into an optical power meter; the optical power meter is used to measure the optical power of the reflected light signal of the C-band laser signal. Therefore, the coupling effect between the FAU and the silicon photonic chip can be detected and evaluated based on the optical power value measured by the optical power meter. By setting a C-band grating in the single-mode waveguide of the silicon photonic chip, and inputting the C-band laser signal from the C-band laser into the C-band grating of the silicon photonic chip through a C-band circulator, and inputting the reflected signal of the C-band laser signal from the C-band grating into the optical power meter, the coupling effect between the FAU and the silicon photonic chip can be detected without adding an additional loopback optical path to the silicon photonic chip. Attached Figure Description

[0009] Figure 1 This is a schematic diagram of the structure of a detection system for FAU coupling effect provided in an embodiment of this application; Figure 2 This is a schematic diagram of the structure of a detection system for FAU coupling effect provided in an embodiment of this application; Figure 3 This is a schematic diagram of a detection process for the coupling effect of FAU provided in an embodiment of this application; Figure 4 This is a schematic diagram of another FAU coupling effect detection system provided in an embodiment of this application; Figure 5 This is a schematic diagram of another FAU coupling effect detection process provided in an embodiment of this application; Figure 6 This is a flowchart illustrating a method for detecting the coupling effect of FAU provided in an embodiment of this application. Detailed Implementation

[0010] To enable those skilled in the art to better understand the technical solutions in the embodiments of this application, some technical terms involved in the embodiments of this application will be explained below.

[0011] 1. Silicon photonics chip: refers to a photonic integrated chip based on silicon materials and using CMOS (Complementary Metal-Oxide-Semiconductor) technology to integrate various optical devices such as optical waveguides, modulators, and detectors to realize on-chip optical signal generation, processing and transmission.

[0012] 2. FAU: refers to a passive device that uses high-precision V-grooves to fix multiple optical fibers into an array, used to achieve efficient coupling of optical signals between optical fibers and chip waveguides.

[0013] The silicon photonic chip contains multiple single-mode waveguides. For each single-mode waveguide on the silicon photonic chip, there is a corresponding optical fiber (corresponding to one optical fiber channel) in the FAU to ensure that the channels are aligned one by one when multiple channels are interconnected in parallel.

[0014] For example, a FAU may include a pluggable FAU or a fixed FAU (or a standard FAU).

[0015] 3. Pluggable FAU: refers to a passive device that uses high-precision V-grooves to fix multiple optical fibers into an array and uses a pluggable interface to connect to the chip, used to achieve efficient coupling of optical signals between the optical fiber and the chip waveguide.

[0016] 4. C-band lasers: These are lasers whose output wavelength is located in the C-band range (approximately 1530nm–1565nm) (such as distributed feedback lasers and external cavity lasers), and are usually used as the light source in dense wavelength division multiplexing (DWDM) systems.

[0017] 5. C-band grating: refers to grating devices (such as fiber Bragg gratings and arrayed waveguide gratings) whose operating wavelength is located in the C-band (approximately 1530nm–1565nm), used for wavelength selection, filtering, dispersion compensation, or wavelength division multiplexing / demultiplexing within this band.

[0018] To make the above-mentioned objectives, features and advantages of the embodiments of this application more apparent and understandable, the technical solutions of the embodiments of this application will be further described in detail below with reference to the accompanying drawings.

[0019] Please see Figure 1 The image shows a schematic diagram of a detection system for FAU coupling effect provided in an embodiment of this application. Figure 1 As shown, the FAU coupling effect detection system 100 may include: C-band laser 110 is used to output C-band laser signals; The C-band circulator 120 is used to input a C-band laser signal into a designated optical fiber of the FAU 140 when the FAU 140 is coupled to the silicon photonic chip 150, and to input the reflected light signal of the C-band laser signal into the optical power meter 130; wherein, a C-band grating is disposed in the single-mode waveguide of the silicon photonic chip 150 corresponding to the designated optical fiber; the reflected light signal of the C-band laser signal is obtained by reflecting the input C-band laser signal by the C-band grating; The optical power meter 130 is used to measure the optical power of the reflected light signal of a C-band laser signal.

[0020] In this embodiment, a C-band grating can be set in at least one single-mode waveguide (which may be referred to as a designated single-mode waveguide) of the silicon photonic chip. By coupling the FAU to the silicon photonic chip, a C-band laser signal is input into the optical fiber (which may be referred to as a designated optical fiber) in the FAU corresponding to the designated single-mode waveguide, and the optical power of the reflected light signal of the C-band laser signal by the C-band grating set in the silicon photonic chip is measured, thereby realizing the detection of the coupling effect of the FAU (i.e., the coupling effect between the FAU and the silicon photonic chip).

[0021] Accordingly, in the embodiments of this application, the FAU coupling effect detection system 100 may include a C-band laser 110, which can be used to output a C-band laser signal.

[0022] In order to enable the input of C-band laser signals into a designated optical fiber of the FAU, and to input the reflected light signal of the C-band laser signal from the C-band grating in the silicon photonic chip to an optical power meter for optical power measurement, the FAU coupling effect detection system 100 may also include a C-band circulator 120 and an optical power meter 130.

[0023] On one hand, the C-band circulator 120 inputs the C-band laser signal output by the C-band laser 110 into the designated optical fiber of the FAU 140. The C-band laser signal is input into the designated single-mode waveguide of the silicon photonic chip 150 through the designated optical fiber of the FAU 140. Since a C-band grating is provided in the designated single-mode waveguide, the C-band laser signal input into the C-band grating will be reflected, and the transmitted signal returns to the C-band circulator 120 along the incident path of the C-band laser signal.

[0024] For example, FAU140 may include a pluggable FAU or a standard FAU.

[0025] On the other hand, the C-band circulator 120 inputs the reflected light signal of the C-band laser signal to the optical power meter, which measures the optical power of the emitted light signal and evaluates the coupling effect between the FAU and the silicon photonic chip based on the optical power value measured by the optical power meter.

[0026] In one example, C-band gratings can be set in multiple single-mode waveguides of the silicon photonic chip. For each single-mode waveguide with a C-band grating (i.e., the specified single-mode waveguide mentioned above), a C-band circulator and an optical power meter can be set to measure the optical power of the reflected light signal of the specified single-mode waveguide, thereby more accurately detecting the coupling state between the FAU and the silicon photonic chip.

[0027] It can be seen that, in Figure 1In the FAU coupling effect detection system shown, a C-band laser is used to output a C-band laser signal; a C-band circulator is used to input the C-band laser signal into a designated fiber of the FAU when the FAU is coupled to the silicon photonic chip, and to input the reflected light signal of the C-band laser signal into an optical power meter; the optical power meter is used to measure the optical power of the reflected light signal of the C-band laser signal. Therefore, the coupling effect between the FAU and the silicon photonic chip can be detected and evaluated based on the optical power value measured by the optical power meter. By setting a C-band grating in the single-mode waveguide of the silicon photonic chip, and inputting the C-band laser signal from the C-band laser into the C-band grating of the silicon photonic chip through a C-band circulator, and inputting the reflected signal of the C-band laser signal from the C-band grating into the optical power meter, the coupling effect between the FAU and the silicon photonic chip can be detected without adding an additional loopback optical path to the silicon photonic chip.

[0028] To enable those skilled in the art to better understand the technical solutions provided in the embodiments of this application, the technical solutions provided in the embodiments of this application are described below in conjunction with specific application scenarios.

[0029] In this embodiment, a pluggable FAU is used as an example. The implementation of a regular FAU can be obtained in the same way.

[0030] In this embodiment, taking the example of a C-band grating disposed in a single-mode waveguide at the edge of the silicon photonic chip, a C-band laser signal can be input into the optical fiber connecting the two single-mode waveguides (single-mode waveguides at the edge of the two sides) in the pluggable FAU coupled to the silicon photonic chip, and the optical power of the reflected light signal of the C-band grating to the input C-band laser signal can be measured, thereby realizing the detection of the coupling state between the pluggable FAU and the silicon photonic chip.

[0031] Accordingly, the FAU coupling effect detection system can be equipped with two C-band circulators (which can be referred to as the first C-band circulator and the second C-band circulator, respectively) and two optical power meters (which can be referred to as the first optical power meter and the second optical power meter, respectively); wherein: The first C-band circulator is used to input the C-band laser signal to a designated optical fiber at one edge position of the pluggable FAU, and to input the reflected light signal of the C-band laser signal to the first optical power meter. The second C-band circulator is used to input the C-band laser signal to a designated optical fiber at the other edge of the pluggable FAU, and to input the reflected light signal of the C-band laser signal to the second optical power meter. The first and second optical power meters are used to measure the optical power of the reflected light signal from the C-band laser signal.

[0032] The specific implementation will be explained below with reference to the accompanying drawings.

[0033] In one implementation, the FAU coupling effect detection system has one C-band laser. In this case, the FAU coupling effect detection system may also include a beam splitter for inputting the C-band laser signal output by the C-band laser to a first C-band circulator and a second C-band circulator, respectively.

[0034] like Figure 2 As shown, the FAU coupling effect detection system 200 includes: a C-band laser 210, a beam splitter 220, a first C-band circulator 231, a second C-band circulator 232, a first optical power meter 241, and a second optical power meter 242.

[0035] In this embodiment, the beam splitter 220 can be a 1:2 beam splitter, which can split one input C-band laser signal into two outputs according to a specific power ratio.

[0036] It should be noted that, in the embodiments of this application, the splitting ratio of the beam splitter can be set according to actual needs, and the embodiments of this application do not impose any restrictions on this.

[0037] In this embodiment, the C-band circulator (such as the first C-band circulator 231 or the second C-band circulator 232 described above) can be a three-port circulator; wherein: Port 1 of the three-port circulator is used to input the C-band laser signal; port 2 is used to output the C-band laser signal and the reflected light signal of the input C-band laser signal; port 3 is used to output the reflected light signal of the C-band laser signal.

[0038] like Figure 3 As shown, when the pluggable FAU 250 is coupled to the silicon photonics chip 260, the C-band laser 210 can output a C-band laser signal 3001. The beam splitter 220 can divide the C-band laser signal 3001 into a first C-band laser signal 3002 and a second C-band laser signal 3003, and input them to port P11 (the aforementioned port 1) of the first C-band circulator 231 and port P21 (the aforementioned port 1) of the second C-band circulator 232, respectively.

[0039] The first C-band circulator 231 can input the first C-band laser signal 3002 through port P12 (the aforementioned port 2) to a designated optical fiber 251 located at one edge of the pluggable FAU 250. The first C-band laser signal 3002 is input through the designated optical fiber 251 to a designated single-mode waveguide 261 located at one edge of the silicon photonic chip 260. A C-band grating 2611 disposed within the single-mode waveguide 261 reflects the first C-band laser signal 3002, generating a reflected light signal 3004 (which can be referred to as the first reflected light signal). The first reflected light signal 3004 is input in reverse along the incident path of the first C-band laser signal 3002 to port P12 of the first C-band circulator 231. The first C-band circulator 231 inputs the first reflected light signal 3004 to a first optical power meter 241 through port P13 (the aforementioned port 3). The first optical power meter 241 can measure the optical power of the first reflected light signal 3004.

[0040] The C-band circulator (such as the first C-band circulator 231 or the second C-band circulator 232 mentioned above) can be connected to the pluggable FAU via a flange (not shown in the figure).

[0041] Similarly, the second C-band circulator 232 can input the second C-band laser signal 3003 through port P22 (port 2 mentioned above) to a designated optical fiber 252 located at the other edge of the pluggable FAU 250. The second C-band laser signal 3003 is input through the designated optical fiber 252 to a designated single-mode waveguide 262 located at the other edge of the silicon photonic chip 260. The C-band grating 2621 disposed within the single-mode waveguide 262 reflects the second C-band laser signal 3003, generating a reflected light signal 3005 (which can be referred to as the second reflected light signal). The second reflected light signal 3005 is input in reverse along the incident path of the second C-band laser signal 3003 to port P22 of the second C-band circulator 232. The second C-band circulator 232 inputs the second reflected light signal 3005 to the second optical power meter 242 through port P23 (port 3 mentioned above). The second optical power meter 242 can measure the optical power of the second reflected light signal 3005.

[0042] The coupling effect between the pluggable FAU250 and the silicon photonic chip 260 can be evaluated based on the optical power values ​​measured by the first optical power meter 241 and the second optical power meter 242.

[0043] In another implementation, the FAU coupling effect detection system has two C-band lasers (which can be referred to as the first C-band laser and the second C-band laser, respectively). The first C-band laser can be used to output C-band laser signals to the first C-band circulator, and the second C-band laser can be used to output C-band laser signals to the second C-band circulator.

[0044] like Figure 4 As shown, the FAU coupling effect detection system 400 includes: a first C-band laser 411, a second C-band laser 412, a first C-band circulator 421, a second C-band circulator 422, a first optical power meter 431, and a second optical power meter 432.

[0045] In this embodiment, the C-band circulator (such as the first C-band circulator 421 or the second C-band circulator 422 described above) can be a three-port circulator.

[0046] like Figure 5 As shown, when the pluggable FAU 440 is coupled to the silicon photonics chip 450, the first C-band laser 411 can output a third C-band laser signal 5001, which can be input to port P11 (the aforementioned port 1) of the first C-band circulator 421.

[0047] The first C-band circulator 421 can input the third C-band laser signal 5001 through port P12 (port 2 above) to a designated optical fiber 441 located at one edge of the pluggable FAU 440. The third C-band laser signal 5001 is input through the designated optical fiber 441 to a designated single-mode waveguide 451 located at one edge of the silicon photonic chip 450. A C-band grating 4511 disposed within the single-mode waveguide 451 reflects the third C-band laser signal 5001, generating a reflected light signal 5002 (which can be referred to as the third reflected light signal). The third reflected light signal 5002 is input in reverse along the incident path of the third C-band laser signal 5001 to port P12 of the first C-band circulator 421. The first C-band circulator 421 inputs the third reflected light signal 5002 to a first optical power meter 431 through port P13 (port 3 above). The first optical power meter 431 can measure the optical power of the third reflected light signal 5002.

[0048] Similarly, the second C-band laser 412 can output a fourth C-band laser signal 5003, which can be input to port P21 (the aforementioned port 1) of the second C-band circulator 422.

[0049] The second C-band circulator 422 can input the fourth C-band laser signal 5003 through port P22 (port 2 above) to a designated optical fiber 442 located at the other edge of the pluggable FAU 440. The fourth C-band laser signal 5003 is input through the designated optical fiber 442 to a designated single-mode waveguide 452 located at the other edge of the silicon photonic chip 450. A C-band grating 4521 disposed within the single-mode waveguide 452 reflects the fourth C-band laser signal 5003, generating a reflected light signal 5004 (which can be referred to as the fourth reflected light signal). The fourth reflected light signal 5004 is input in reverse along the incident path of the fourth C-band laser signal 5003 to port P12 of the second C-band circulator 422. The second C-band circulator 422 inputs the fourth reflected light signal 5004 to the second optical power meter 432 through port P13 (port 3 above). The first optical power meter 432 can measure the optical power of the fourth reflected light signal 5004.

[0050] The coupling effect between the pluggable FAU440 and the silicon photonic chip 450 can be evaluated based on the optical power values ​​measured by the first optical power meter 431 and the second optical power meter 432.

[0051] Please see Figure 6 This is a flowchart illustrating a method for detecting the coupling effect of FAU according to an embodiment of this application. This method can be applied to the FAU coupling effect detection system described in the above embodiments, such as... Figure 6 As shown, the method for detecting the coupling effect of the FAU may include the following steps: Step S610: Obtain the optical power value measured by the optical power meter.

[0052] In this embodiment, the specific implementation of the optical power meter in measuring the optical power value can be found in the relevant descriptions in the above embodiments, and will not be repeated here.

[0053] Step S620: Adjust the coupling state between FAU and silicon photonic chip according to the obtained optical power value until the optical power value meets the preset conditions.

[0054] In this embodiment of the application, the optical power value obtained can be determined to meet the preset conditions based on the optical power value measured by the optical power meter.

[0055] For example, the preset conditions can be used to characterize that the coupling state between the FAU and the silicon photonic chip meets the requirements, such as reaching the preset optimal coupling state.

[0056] For example, when there is only one optical power meter, the optical power value meeting the preset conditions can include the optical power value reaching the maximum power value.

[0057] When there are multiple optical power meters (e.g., two), the optical power value can meet the preset conditions, which may include the optical power value measured by each optical power meter reaching the maximum power value or the sum of the optical power values ​​measured by each optical power meter reaching the maximum power value.

[0058] In this embodiment of the application, the coupling state between the FAU and the silicon photonics chip can be adjusted based on the optical power value measured by the optical power meter until the optical power value meets the preset conditions.

[0059] For example, if the obtained optical power value does not meet the preset conditions, a prompt message can be output to prompt relevant personnel to adjust the coupling state of the FAU and the silicon photonic chip. Based on the adjusted coupling state of the FAU and the silicon photonic chip, the detection and evaluation can be performed again in the manner described in the above embodiments until the optical power value meets the preset conditions.

[0060] For example, if the obtained optical power value does not meet the preset conditions, the coupling state between the FAU and the silicon photonic chip can be adjusted by a robotic arm or a mobile robot. Based on the adjusted coupling state between the FAU and the silicon photonic chip, the detection and evaluation can be performed again in the manner described in the above embodiments until the optical power value meets the preset conditions.

[0061] In one implementation, the optical power value may include a first optical power value measured by a first optical power meter and a second optical power value measured by a second optical power meter; The above-mentioned adjustment of the coupling state between the FAU and the silicon photonics chip based on the optical power value until the optical power value meets the preset conditions may include: The coupling state between the FAU and the silicon photonic chip is adjusted based on the first optical power value and the second optical power value until the first optical power value and the second optical power value meet the preset conditions.

[0062] For example, the first optical power value and the second optical power value satisfying the preset conditions may include both the first optical power value and the second optical power value reaching the maximum power value, or the sum of the first optical power value and the second optical power value reaching the maximum power value, etc.

[0063] In one implementation, the method for detecting the FAU coupling effect provided in this application embodiment may further include: When the optical power value meets the preset conditions, the Z-axis distance between the FAU and the silicon photonic chip is corrected based on the coupling efficiency difference between the C-band and O-band.

[0064] In this embodiment, considering that the C-band laser signal is used to detect the coupling state between the FAU and the silicon photonic chip in the above embodiment, but in actual use, the actual transmitted signal is the O-band (1260nm-1360nm) laser signal. Therefore, the optimal coupling effect determined based on the detection result of the C-band laser signal is not the optimal coupling effect for the O-band laser signal.

[0065] Based on this, in order to ensure the coupling effect between the FAU and the silicon photonic chip in the actual application process (transmission of O-band laser signal), after determining that the optimal coupling effect has been achieved in the above manner (such as the obtained optical power value meeting the preset conditions), the Z-axis distance between the FAU and the silicon photonic chip can also be corrected based on the coupling efficiency difference between the C-band and the O-band.

[0066] The difference in coupling efficiency between the C-band and the O-band can be determined through testing.

[0067] Here, the Z-axis refers to the direction perpendicular to the coupling surface, i.e., from the FAU towards the silicon photonic chip. The Z-axis distance refers to the gap between the FAU fiber end face and the silicon photonic chip waveguide end face.

[0068] It should be noted that since the X-axis and Y-axis are not affected by wavelength, the distance between the X-axis and Y-axis does not need to be corrected.

[0069] Wherein, the X-axis is perpendicular to the fiber array arrangement direction within the coupling plane; the Y-axis is parallel to the fiber array arrangement direction within the coupling plane.

[0070] Furthermore, since the O-band is almost unaffected by the C-band grating (engineering-wise it can be considered to have no crosstalk or additional loss), setting the C-band grating in the silicon photonics chip in the above manner will not affect the normal operation of the optical path.

Claims

1. A detection system for FAU coupling effect, characterized in that, include: C-band laser, used to output C-band laser signals; A C-band circulator is used to input a C-band laser signal into a designated optical fiber of the FAU when the FAU is coupled to a silicon photonic chip, and to input the reflected light signal of the C-band laser signal into an optical power meter; wherein, a C-band grating is disposed in the single-mode waveguide of the silicon photonic chip corresponding to the designated optical fiber; the reflected light signal of the C-band laser signal is obtained by reflecting the input C-band laser signal by the C-band grating; The optical power meter is used to measure the optical power of the reflected light signal from a C-band laser signal.

2. The detection system according to claim 1, characterized in that, C-band gratings are provided in the single-mode waveguides at both edges of the silicon photonic chip.

3. The detection system according to claim 2, characterized in that, The C-band circulator includes a first C-band circulator and a second C-band circulator; the optical power meter includes a first optical power meter and a second optical power meter; wherein: A first C-band circulator is used to input a C-band laser signal to a designated optical fiber at one edge of the FAU, and to input the reflected light signal of the C-band laser signal to a first optical power meter. The second C-band circulator is used to input the C-band laser signal to a designated optical fiber at the other edge of the FAU, and to input the reflected light signal of the C-band laser signal to the second optical power meter. The first optical power meter and the second optical power meter are used to measure the optical power of the reflected light signal of the C-band laser signal.

4. The detection system according to claim 3, characterized in that, The detection system uses one C-band laser and also includes a beam splitter. The beam splitter is used to divide the C-band laser signal output by the C-band laser into a first C-band laser signal and a second C-band laser signal, and input them to the first C-band circulator and the second C-band circulator, respectively. The first C-band circulator is used to input the first C-band laser signal to a designated optical fiber at one edge of the FAU, and to input the reflected light signal of the first C-band laser signal to the first optical power meter. The second C-band circulator is used to input the second C-band laser signal to a designated optical fiber at the other edge of the FAU, and to input the reflected light signal of the second C-band laser signal to the second optical power meter.

5. The detection system according to claim 3, characterized in that, The detection system uses two C-band lasers; among which: A first C-band laser is used to input a third C-band laser signal into the first C-band circulator; The first C-band circulator is used to input the third C-band laser signal to a designated optical fiber at one edge of the FAU, and to input the reflected light signal of the third C-band laser signal to the first optical power meter; A second C-band laser is used to input a fourth C-band laser signal into the second C-band circulator; The second C-band circulator is used to input the fourth C-band laser signal to a designated optical fiber at the other edge of the FAU, and to input the reflected light signal of the fourth C-band laser signal to the second optical power meter.

6. The detection system according to claim 1, characterized in that, All C-band circulators are three-port circulators. Port 1 of the three-port circulator is used to input a C-band laser signal; port 2 is used to output a C-band laser signal and a reflected light signal of the input C-band laser signal; and port 3 is used to output a reflected light signal of the C-band laser signal.

7. A method for detecting the coupling effect of FAU, characterized in that, The method, applied to the detection system according to any one of claims 1-6, comprises: Obtain the optical power value measured by the optical power meter; The coupling state between the FAU and the silicon photonic chip is adjusted according to the optical power value until the optical power value meets the preset conditions.

8. The method according to claim 7, characterized in that, The optical power value includes the first optical power value measured by the first optical power meter and the second optical power value measured by the second optical power meter; The step of adjusting the coupling state between the FAU and the silicon photonics chip based on the optical power value until the optical power value meets a preset condition includes: The coupling state between the FAU and the silicon photonic chip is adjusted based on the first optical power value and the second optical power value until the first optical power value and the second optical power value meet the preset conditions.

9. The method according to claim 7, characterized in that, The method further includes: When the optical power value meets the preset conditions, the Z-axis distance between the FAU and the silicon photonic chip is corrected based on the coupling efficiency difference between the C-band and O-band.

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